CN114709198A - 具有夹持特征的功率模块和功率模块组件 - Google Patents

具有夹持特征的功率模块和功率模块组件 Download PDF

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Publication number
CN114709198A
CN114709198A CN202210353173.6A CN202210353173A CN114709198A CN 114709198 A CN114709198 A CN 114709198A CN 202210353173 A CN202210353173 A CN 202210353173A CN 114709198 A CN114709198 A CN 114709198A
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CN
China
Prior art keywords
power module
base plate
top surface
clamping device
power
Prior art date
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Pending
Application number
CN202210353173.6A
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English (en)
Chinese (zh)
Inventor
霍尔格·比尔
拉尔斯·保罗森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Silicon Power GmbH
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Danfoss Silicon Power GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=63637860&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN114709198(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Danfoss Silicon Power GmbH filed Critical Danfoss Silicon Power GmbH
Publication of CN114709198A publication Critical patent/CN114709198A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Inverter Devices (AREA)
  • Mounting Of Printed Circuit Boards And The Like (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN202210353173.6A 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件 Pending CN114709198A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102017218875.8 2017-10-23
DE102017218875.8A DE102017218875B4 (de) 2017-10-23 2017-10-23 Leistungsmodul-Baugruppe
PCT/EP2018/073885 WO2019081107A1 (en) 2017-10-23 2018-09-05 POWER MODULE HAVING CHARACTERISTICS FOR ASSEMBLING POWER AND CLAMP MODULE
CN201880057326.4A CN111095550A (zh) 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201880057326.4A Division CN111095550A (zh) 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件

Publications (1)

Publication Number Publication Date
CN114709198A true CN114709198A (zh) 2022-07-05

Family

ID=63637860

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202210353173.6A Pending CN114709198A (zh) 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件
CN202311256712.5A Pending CN117276255A (zh) 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件
CN201880057326.4A Pending CN111095550A (zh) 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN202311256712.5A Pending CN117276255A (zh) 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件
CN201880057326.4A Pending CN111095550A (zh) 2017-10-23 2018-09-05 具有夹持特征的功率模块和功率模块组件

Country Status (3)

Country Link
CN (3) CN114709198A (de)
DE (1) DE102017218875B4 (de)
WO (1) WO2019081107A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3859774B1 (de) * 2020-01-29 2022-05-04 Hitachi Energy Switzerland AG Leistungshalbleitermodul
EP4095900B1 (de) * 2021-05-28 2024-01-31 Hitachi Energy Ltd Klemmelement und verfahren zur herstellung eines leistungshalbleiterbauelements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609528A1 (de) 1993-02-01 1994-08-10 Motorola, Inc. Halbleiterpackung von niedriger Induktanz
JP2000082774A (ja) 1998-06-30 2000-03-21 Sumitomo Electric Ind Ltd パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル
WO2004105220A2 (en) * 2003-05-16 2004-12-02 Ballard Power Systems Corporation Power module system
US7759778B2 (en) * 2008-09-15 2010-07-20 Delphi Technologies, Inc. Leaded semiconductor power module with direct bonding and double sided cooling
DE202015006897U1 (de) * 2014-11-04 2015-11-24 Danfoss Silicon Power Gmbh Halbleitermodul und Leistungsanordnung
CN106415834B (zh) 2014-11-28 2019-09-13 富士电机株式会社 半导体装置

Also Published As

Publication number Publication date
CN117276255A (zh) 2023-12-22
DE102017218875B4 (de) 2022-07-28
CN111095550A (zh) 2020-05-01
DE102017218875A1 (de) 2019-04-25
WO2019081107A1 (en) 2019-05-02

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