CN114698372A - 声波换能单元及其制作方法、声波换能器 - Google Patents

声波换能单元及其制作方法、声波换能器 Download PDF

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CN114698372A
CN114698372A CN202080002477.7A CN202080002477A CN114698372A CN 114698372 A CN114698372 A CN 114698372A CN 202080002477 A CN202080002477 A CN 202080002477A CN 114698372 A CN114698372 A CN 114698372A
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layer
substrate
lattice
acoustic wave
electrode
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CN114698372B (zh
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陈右儒
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BOE Technology Group Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0688—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

公开一种声波换能单元及其制作方法、声波换能器，声波换能单元包括：衬底；设置在所述衬底上的第一电极；支撑部，位于所述第一电极远离所述衬底的一侧；振膜层，位于所述支撑部远离所述衬底的一侧；释放孔，所述释放孔至少贯穿所述振膜层；其中，所述支撑部、所述振膜层和所述第一电极限定出振动腔，所述振动腔与所述释放孔连通，所述支撑部与所述第一电极的晶格匹配，且所述支撑部与所述振膜层的晶格匹配；所述支撑部的材料能够在激光作用下分解为金属单质和气体；所述支撑部的光学分子能隙小于所述振膜层的光学分子能隙。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN202080002477.7A 2020-10-27 2020-10-27 声波换能单元及其制作方法、声波换能器 Active CN114698372B (zh)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107921479A (zh) * 2015-08-11 2018-04-17 皇家飞利浦有限公司 具有过电流保护的电容式微加工超声换能器
WO2019030045A1 (en) * 2017-08-08 2019-02-14 Koninklijke Philips N.V. MICRO-MACHINED ULTRASONIC CAPACITIVE TRANSDUCER DEVICES (CMUT) AND CONTROL METHODS
CN109528229A (zh) * 2017-09-21 2019-03-29 通用电气公司 制造超声探头的方法和超声探头
CN110510573A (zh) * 2019-08-30 2019-11-29 中国科学院深圳先进技术研究院 一种电容式微机械超声换能器及其制备方法和应用
CN111007154A (zh) * 2019-12-02 2020-04-14 暨南大学 柔性超声换能器、制作方法及全光超声发射与检测方法
CN111377389A (zh) * 2020-03-25 2020-07-07 京东方科技集团股份有限公司 超声换能器件及制备方法
US20200304087A1 (en) * 2016-03-11 2020-09-24 Akoustis, Inc. Piezoelectric acoustic resonator with improved tcf manufactured with piezoelectric thin film transfer process

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Publication number Priority date Publication date Assignee Title
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
US7309620B2 (en) * 2002-01-11 2007-12-18 The Penn State Research Foundation Use of sacrificial layers in the manufacture of high performance systems on tailored substrates
WO2020072938A1 (en) * 2018-10-05 2020-04-09 Knowles Electronics, Llc Methods of forming mems diaphragms including corrugations
CN109561876A (zh) * 2018-10-24 2019-04-02 深圳市汇顶科技股份有限公司 超声换能器及其制造方法
CN109734047B (zh) * 2019-02-27 2021-03-23 京东方科技集团股份有限公司 一种mems器件及其制作方法、显示基板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107921479A (zh) * 2015-08-11 2018-04-17 皇家飞利浦有限公司 具有过电流保护的电容式微加工超声换能器
US20200304087A1 (en) * 2016-03-11 2020-09-24 Akoustis, Inc. Piezoelectric acoustic resonator with improved tcf manufactured with piezoelectric thin film transfer process
WO2019030045A1 (en) * 2017-08-08 2019-02-14 Koninklijke Philips N.V. MICRO-MACHINED ULTRASONIC CAPACITIVE TRANSDUCER DEVICES (CMUT) AND CONTROL METHODS
CN109528229A (zh) * 2017-09-21 2019-03-29 通用电气公司 制造超声探头的方法和超声探头
CN110510573A (zh) * 2019-08-30 2019-11-29 中国科学院深圳先进技术研究院 一种电容式微机械超声换能器及其制备方法和应用
CN111007154A (zh) * 2019-12-02 2020-04-14 暨南大学 柔性超声换能器、制作方法及全光超声发射与检测方法
CN111377389A (zh) * 2020-03-25 2020-07-07 京东方科技集团股份有限公司 超声换能器件及制备方法

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