CN114690466B - Display substrate preparation method, display substrate and display panel - Google Patents
Display substrate preparation method, display substrate and display panel Download PDFInfo
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- CN114690466B CN114690466B CN202210325379.8A CN202210325379A CN114690466B CN 114690466 B CN114690466 B CN 114690466B CN 202210325379 A CN202210325379 A CN 202210325379A CN 114690466 B CN114690466 B CN 114690466B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
Abstract
The application discloses a preparation method of a display substrate, the display substrate and a display panel, wherein the preparation method comprises the following steps: forming a color resistance layer on a substrate; coating an organic insulating photoresist material on the color resist layer to form an organic insulating photoresist layer with a first preset thickness; vacuumizing the equipment where the color resistance layer and the organic insulating photoresist layer are located; exposing the organic insulating photoresist layer; and developing to obtain a second preset thickness of organic insulating photoresist layer; the ratio of the second preset thickness to the first preset thickness is the residual film rate of the organic insulation photoresist layer, and the value of the residual film rate is less than or equal to 70% and greater than or equal to 60%. By controlling the film thickness of the organic insulation photoresist, the problem of display residual image caused by the fact that metallic elements or attached ion impurities in the color resistance pigment run out to the organic insulation photoresist layer in the process of the display substrate is solved.
Description
Technical Field
The application relates to the technical field of display, in particular to a preparation method of a display substrate, the display substrate and a display panel.
Background
In the current manufacturing process of the display panel, the manufacturing process of the display substrate is particularly important, wherein the display substrate comprises a color film substrate, an array substrate and a COA substrate, the color film substrate and the COA substrate mainly need to be respectively prepared with color resistances of different colors, and the preparation of each color resistance needs to be carried out through the following technical processes: coating a color resistance layer with a corresponding color, baking, exposing, developing and the like to form the color resistance of the color of the required pattern. The above process needs to be repeated several times as several color resists need to be formed; the most important of the array substrate is to form a flat layer on the electrode, wherein the flat layer is formed through the procedures of cleaning, dehydration baking, hydrophobic treatment, vacuum drying, exposure, development, ashing and the like.
After the preparation of the array substrate and the color film substrate is completed, the array substrate and the color film substrate form a display panel after being packaged, the display panel also needs to be subjected to a lighting detection step before leaving the factory, in the current detection, the problem of residual images of part display panels in different batches or part display panels in the same batch is often found, so that reworking or waste disposal is caused, and the problem of residual images of the display panel is reduced to improve the factory yield, so that the problem to be solved is urgent.
Disclosure of Invention
The application aims to provide a preparation method of a display substrate, which improves the problem of display residual images.
The application discloses a preparation method of a display substrate, which comprises the following steps:
forming a color resistance layer on a substrate;
coating an organic insulating photoresist material on the color resist layer to form an organic insulating photoresist layer with a first preset thickness;
vacuumizing the equipment where the color resistance layer and the organic insulating photoresist layer are located;
exposing the organic insulating photoresist layer; and
developing to obtain an organic insulating photoresist layer with a second preset thickness;
the ratio of the second preset thickness to the first preset thickness is the residual film rate of the organic insulation photoresist layer, and the value of the residual film rate is less than or equal to 70% and greater than or equal to 60%.
Optionally, the main component of the organic insulating photoresist material is acrylic resin, and alkaline solution is added in the step of exposing and developing to obtain the organic insulating photoresist layer with the second preset thickness.
Optionally, the alkaline solution includes a- (CH 2) -Ph- (COOH) m group.
Optionally, the value of the first preset thickness is d1, and the value of the second preset thickness is d2; wherein d1 is less than or equal to 3.0um and less than or equal to 3.2um, d2 is less than or equal to 1.9um and less than or equal to 2.1; in the step of exposing the organic insulating photoresist layer, the energy value of the exposure is 80mj-100mj, and in the step of developing to obtain the organic insulating photoresist layer with the second preset thickness, the concentration of tetramethyl ammonium hydroxide in the developing solution is 2.38% -2.45%, and the developing time is 70s-80s.
Optionally, the color set layer includes a plurality of sets of color resists, each set of color set includes a red color resist, a green color resist and a blue color resist, and in the step of developing to obtain the organic insulating photoresist layer with the second preset thickness, the organic insulating photoresist is notched corresponding to the color resists on two sides of each set of color resist.
Optionally, the value of the first preset thickness is d1, wherein d1 is more than or equal to 2.9um and less than or equal to 3.1um; in the step of exposing the organic insulating photoresist layer, the energy value of the exposure is 100mj-110mj, and in the step of developing to obtain the organic insulating photoresist layer with the second preset thickness, the concentration of tetramethyl ammonium hydroxide in the developing solution is 2.4% -2.5%, and the developing time is 75s-85s; the value of the second preset thickness is d2, wherein d2 is more than or equal to 1.9um and less than or equal to 2um; the residual film rate is 68% or less and 61% or more.
Optionally, the step of exposing the organic insulating photoresist layer further comprises a step of baking, wherein the baking temperature is between 200 and 250 ℃, and the baking time is between 15 and 25 minutes.
Optionally, in the step of performing vacuum treatment on the equipment where the color resist layer and the organic insulating photoresist layer are located, the vacuum time is 78s-84s.
The application also discloses a display substrate, which comprises a color resist layer and an organic insulation light resist layer, wherein the organic insulation light resist layer is arranged on the color group layer, and the chemical molecular formula of the main components of the organic insulation light resist layer is as follows:
the application also discloses a display panel which comprises a counter substrate and the display substrate, wherein a liquid crystal layer is arranged between the counter substrate and the display substrate.
Compared with other schemes of adding the processing steps, the application adopts the original processing steps, and under the premise of not adding any processing steps, the residual film rate of the organic insulation photoresist layer is changed to be smaller than that of the traditional organic insulation photoresist layer, so that more ion impurities which are out of the color resist layer to the upper end of the organic insulation photoresist layer in the process of vacuumizing, exposing and developing can be removed, the problem of displaying residual images is solved, and the factory rate of the display panel is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is evident that the figures in the following description are only some embodiments of the application, from which other figures can be obtained without inventive effort for a person skilled in the art. In the drawings:
FIG. 1 is a flow chart of a method for fabricating a display substrate according to an embodiment of the application;
FIG. 2 is a schematic view of a display substrate under a coating process according to an embodiment of the application;
FIG. 3 is a schematic view of a display substrate under a vacuum pumping process according to an embodiment of the application;
FIG. 4 is a schematic view of a display substrate under an exposure process according to an embodiment of the application;
FIG. 5 is a schematic view of a display substrate under a developing process according to an embodiment of the application;
FIG. 6 is a schematic view of a display substrate according to another embodiment of the present application;
fig. 7 is a schematic diagram of a display panel according to an embodiment of the application.
Wherein, 100, display base plate; 110. a substrate; 120. an organic insulating photoresist layer; 130. a color resist layer; 131. red color resistance; 132. green resistance; 133. blue color resistance; 140. ion impurities; 150. a photomask; 160. a notch; 200. a display panel.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application.
The application is described in detail below with reference to the attached drawings and alternative embodiments.
In the preparation process of the display panel, each component or a corresponding structure or circuit formed by the components can influence the display of the display panel, the afterimage problem is always a serious problem, and in the use process, if the afterimage is found, the client watching experience can be seriously influenced, so that the factory yield and economic benefit of a manufacturer can be directly influenced; the possibility of generating the afterimage is quite large, the related range is quite wide, and each component on the display panel or each structure forming the display panel is possibly caused to generate the afterimage due to the error in any step in the preparation process; in the current preparation, under the condition that numerous residual images are found, the preparation yield of the display panel is greatly improved, but in the same batch, the display panels prepared by adopting the same materials, methods and steps still have the problem of residual images, and the part of the display panels with residual images is not broken, is not in other structures, and is not caused by technological errors.
In the research of the afterimage problem, as the processing steps are repeatedly used and have no other variables, the method is not a material problem, and is not a process result, a large amount of detection and research show that the color resistor contains resin components, various pigments are doped in the resin to easily introduce some ion impurities, the ion impurities exist in a screen in the process of vacuumizing and high-temperature baking at the rear end, and the ion impurities generate residual DC bias under the action of DC bias voltage, so that the afterimage is displayed.
As shown in fig. 1, as a first embodiment of the present application, a method for manufacturing a display substrate is disclosed, comprising the steps of:
s1: forming a color resistance layer on a substrate;
s2: coating an organic insulating photoresist material on the color resist layer to form an organic insulating photoresist layer with a first preset thickness;
s3: vacuumizing the equipment where the color resistance layer and the organic insulating photoresist layer are located;
s4: exposing the organic insulating photoresist layer; and
s5: developing to obtain an organic insulating photoresist layer with a second preset thickness;
the ratio of the second preset thickness to the first preset thickness is the residual film rate of the organic insulation photoresist layer, and the value of the residual film rate is less than or equal to 70% and greater than or equal to 60%.
After the organic insulating photoresist layer is formed, ion impurities in the color resist or metal elements in the pigment run into the organic insulating photoresist layer, when the organic insulating photoresist layer is vacuumized, the ion impurities in the organic insulating photoresist layer move to the upper end of the organic insulating layer along with the air flow due to the air flow, the thickness of the organic insulating photoresist layer is expressed as H, the upper end is far away from the color resist, the thickness of the upper end is more than or equal to 0.3H and less than or equal to 0.4H, and most of the ion impurities are at the upper end of the organic insulating photoresist layer.
It should be noted that if the residual film rate is above 70%, a large amount of ion impurities exist in the organic insulation photoresist layer, so that obvious residual image problems are generated; if the residual film rate is less than 60%, the film layer of the finally formed organic insulation photoresist layer is too thin, which leads to exposure of the metal wire and influences the conductivity.
Further, in order to further improve the residual image and ensure the conductivity, the value of the residual film rate is generally controlled between 64% and 66%, and the corresponding related process steps are that in the step S2, G8.5 generation line is adopted during coating, the discharge amount is 132ml, and the film thickness of the formed organic insulation photoresist layer with the first preset thickness is d1, wherein d1 is more than or equal to 3.0um and less than or equal to 3.2um; correspondingly, in the step S3, the vacuum is pumped for 63S to the bottom pressure of 23Pa, and the total time is 78S-84S; in the step S4, 80mj-100mj is adopted to expose the organic insulation photoresist layer; in the step S5, tetramethyl ammonium hydroxide with the concentration of 2.38% -2.45% is adopted for developing treatment, the developing time is 70S-80S, so that an organic insulating photoresist layer with a second preset thickness value is obtained, and the value of the second preset thickness value is d2, wherein d2 is more than or equal to 1.9um and less than or equal to 2.1; specifically, as the optimal values of the parameters in each part of the process in this embodiment, reference is made to the following table:
table one:
in this embodiment, the main component of the organic insulating photoresist material forming the organic insulating photoresist layer includes, but is not limited to, acryl resin, and may be other plastic polymer materials; adding an alkaline solution in the step of developing to obtain the organic insulating photoresist layer with the second preset thickness, wherein the alkaline solution comprises, but is not limited to- (CH 2) -Ph- (COOH) m groups; wherein, acrylic resin and- (CH 2) -Ph- (COOH) m group are polymerized in alkaline solution to obtain new polymer, which comprises the following steps:
the polymer is formed by chemical reaction of acrylic resin and corresponding groups, and the organic insulating photoresist layer with a second preset thickness is formed by taking the acrylic resin as a main body material component of the organic insulating photoresist layer, so that the main body material component of the organic insulating photoresist layer is changed in later development, the sensitivity of the changed main body component in developing solution is increased, the reaction rate is improved, the residual film rate is reduced, and finally the residual film rate reaches 65% in the corresponding processing steps, so that ion impurities in the organic insulating photoresist layer are reduced or even eliminated, and the residual image problem is eliminated.
In addition, the composition of the main material of the organic insulating photoresist layer can be changed by the method that before coating, namely the coated organic insulating photoresist material comprises the polymer obtained by the polymerization reaction of the acrylic resin and the- (CH 2) -Ph- (COOH) m group in an alkaline solution, namely the polymer can be obtained by the polymerization reaction of the acrylic resin and the- (CH 2) -Ph- (COOH) m group in the alkaline solution, and the polymer is directly used for relevant processing steps during coating.
As a second embodiment of the present application, a method for manufacturing a display substrate is disclosed, which is different from the above-described first embodiment in that the present embodiment does not introduce any group to change the main component of the original organic insulating resist layer, and in the case where the other steps remain substantially unchanged, the residual film rate is reduced by increasing the development time, specifically, in step S2, the value of the first preset thickness of the organic insulating resist layer formed by coating is d1, wherein 2.9um is equal to or less than d1 is equal to or less than 3.1um, in the step of exposing the organic insulating resist layer, the energy value of the exposure is 100mj to 110mj, in the step of developing to obtain the organic insulating resist layer of the second preset thickness, the concentration of tetramethylammonium hydroxide in the developing solution is 2.4% to 2.5%, and the development time is 75S to 85S; the value of the second preset thickness is d2, wherein d2 is less than or equal to 1.9um and less than or equal to 2um, and the value of the residual film rate is less than or equal to 68% and more than or equal to 61%; wherein, a preferred value of each parameter is selected for the process step, and the following table II can be referred to specifically:
and (II) table:
the residual film rate of the organic insulation photoresist layer is 66%, so that ion impurities or metal elements and the like which are out of the color resistance into the organic insulation photoresist layer are greatly reduced, and the problem of residual images is solved.
As a third embodiment of the present application, a method for manufacturing a display substrate is disclosed, which is different from the first embodiment in that the composition of the main material of the organic insulating photoresist layer is not changed in this embodiment, but a baking step is further included after the step of exposing the organic insulating photoresist layer, the baking temperature is between 200 and 250 degrees, and the baking time is between 15 and 25 minutes.
Since the resin and the pigment in the color resistor do not have bonds and reactions, the post-baking temperature of the display substrate can be raised as a means for improving the residual image, namely, in the high-temperature baking process, the bridging bonds of the resin are mutually linked to enable the pigment to be closed in the resin, so that the metal elements or attached impurities in the pigment are prevented from largely escaping and polluting the inside of the screen.
As a fourth embodiment of the present application, referring to fig. 2 to 5, the color set layer 130 includes a plurality of sets of color resists, each set of color set includes a red color resist 131, a green color resist 132 and a blue color resist 133, and in the step of developing to obtain the organic insulating photoresist layer with the second preset thickness, notches 160 are formed on the organic insulating photoresist layer corresponding to the color resists on both sides of each set of color resists, so as to improve the transmittance of the color resist layer and enhance the display effect.
In the discussion corresponding to the first embodiment, fig. 2 is a schematic diagram of a display substrate under a coating process, and in the corresponding embodiment, step S2 is performed, an acryl resin is used as a coating material for forming an organic insulation photoresist layer 120, a color resist layer is formed on a substrate 110, the organic insulation photoresist layer is formed on the color resist layer, the film thickness of the formed organic insulation photoresist layer 120 is H, wherein H is a first preset thickness, the thickness value is 3.2um, and during the coating, ion impurities 140 exist in red color resist 131, green color resist 132 and blue color resist 133 (RGB) in the color resist layer 130, that is, ion impurities 140 are all emitted to the organic insulation photoresist layer 120 in the red color resist 131, the green color resist 132 and the blue color resist 133; FIG. 3 is a schematic diagram of a display substrate under a vacuum process, corresponding to step S2 in the embodiment, after the vacuum process, ion impurities 141 are removed from the color resist layer 130 to the upper end of the organic insulation photoresist 120, and most of the ion impurities 140 are distributed over 0.65H; FIG. 4 is a schematic diagram of a display substrate under an exposure process, corresponding to step S4 in the embodiment, by performing exposure development using a half-mask photomask 150; fig. 5 is a schematic diagram of a display substrate in a developing process, corresponding to step S5 in the embodiment, the upper end of the organic insulation photoresist layer 120 is removed by developing, so that the residual film rate of the organic insulation photoresist layer is 65%, thereby completely removing the ion impurities 140 at the upper end, and finally improving the display residual image problem caused by the ion impurities 140.
As shown in fig. 6, as a fifth embodiment of the present application, a display substrate 100 is disclosed, where the display substrate 100 is manufactured by the manufacturing method described in the first embodiment, the display substrate includes a color film substrate, an array substrate, and a COA substrate, the present application is mainly directed to improvement of the process of RGB on the color film substrate and the COA substrate, and particularly, the change of the main component of the organic insulating photoresist layer, and specifically, the display substrate 100 includes a color resist layer 130 and an organic insulating photoresist layer 120, where the organic insulating photoresist layer 120 is disposed on the color set layer 130, and the chemical formula of the main component of the organic insulating photoresist layer 120 is as follows:
by changing the composition of the main material of the organic insulating photoresist layer, the organic insulating photoresist layer with the first preset thickness is coated under the condition of fixed film thickness at last, so that the residual film rate of the organic insulating photoresist layer is maintained in the range of 70% or less and 60% or more, ion impurities are reduced, and the problem of residual image display is improved.
Of course, the display substrate is not limited to the first embodiment, but may be obtained by other preparation method embodiments, and the difference between the above embodiments is that the main material of the finally formed organic insulating photoresist layer is not a polymer obtained by polymerization reaction of acrylic resin and- (CH 2) -Ph- (COOH) m groups, but an original acrylic resin material is used to prepare the organic insulating photoresist layer with a residual film rate of 60% -70%.
As shown in fig. 7, as a sixth embodiment of the present application, a display panel 200 is disclosed, the display panel 200 includes a display substrate 100, the display substrate 100 includes a color stack layer 130, an organic insulating photoresist layer 120 is disposed on the color stack layer 130, and a chemical formula of a main component of the organic insulating photoresist layer 120 is as follows:
the display substrate in this embodiment may be a Color filter substrate, or may be a COA (Color filter on Array) substrate, that is, a Color filter is formed on the Array substrate, where the COA substrate is equivalent to a Color resist layer, and a main material of the organic insulating photoresist layer formed on the Color resist layer is a polymer obtained by polymerization reaction of acrylic resin and- (CH 2) -Ph- (COOH) m groups, and under the process steps of the related parameters in the first embodiment, the residual film rate is controlled to be 60% -70%, so as to obtain a display panel capable of reducing display residual images.
When the display substrate is a color film substrate, the opposite substrate is an array substrate, and a liquid crystal layer is arranged between the array substrate and the display substrate.
When the display substrate is a COA substrate, the opposite substrate is a color film substrate, and a liquid crystal layer is arranged between the COA substrate and the color film substrate.
As described in the fifth embodiment, the first substrate in this embodiment can be obtained by the preparation method of the first embodiment, but can also be obtained by the preparation method of other embodiments, except that the host material of the organic insulating resist layer obtained by the preparation method of the first embodiment is different from the host material of the organic insulating resist layer obtained by the other preparation method, but a display panel that can reduce the display residual image can still be obtained.
It should be noted that, the limitation of each step in the present solution is not to be considered as limiting the sequence of steps on the premise of not affecting the implementation of the specific solution, and the steps written in the previous step may be executed before, or executed after, or even executed simultaneously, so long as the implementation of the present solution is possible, all the steps should be considered as falling within the protection scope of the present application.
The technical scheme of the application can be widely applied to various display panels, such as TN (Twisted Nematic) display panels, IPS (In-Plane Switching) display panels, VA (Vertical Alignment) display panels, MVA (Multi-Domain Vertical Alignment) display panels, and of course, other types of display panels, such as OLED (Organic Light-Emitting Diode) display panels, can be also applied to the scheme.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (10)
1. A method for manufacturing a display substrate, comprising the steps of:
forming a color resistance layer on a substrate;
coating an organic insulating photoresist material on the color resist layer to form an organic insulating photoresist layer with a first preset thickness;
vacuumizing the equipment where the color resistance layer and the organic insulating photoresist layer are located;
exposing the organic insulating photoresist layer; and
developing to obtain an organic insulating photoresist layer with a second preset thickness;
the ratio of the second preset thickness to the first preset thickness is the residual film rate of the organic insulation photoresist layer, and the value of the residual film rate is less than or equal to 70% and greater than or equal to 60%.
2. The method of claim 1, wherein the organic insulating photoresist material comprises an acryl resin as a main component, and an alkaline solution is added in the exposing and developing steps to obtain the second predetermined thickness of the organic insulating photoresist layer.
3. The method for manufacturing a display substrate according to claim 2, wherein the alkaline solution includes a- (CH 2) -Ph- (COOH) m group.
4. The method of manufacturing a display substrate according to claim 3, wherein the first preset thickness has a value d1 and the second preset thickness has a value d2;
wherein d1 is less than or equal to 3.0um and less than or equal to 3.2um, d2 is less than or equal to 1.9um and less than or equal to 2.1;
in the step of exposing the organic insulating photoresist layer, the energy value of the exposure is 80mj-100mj, and in the step of developing to obtain the organic insulating photoresist layer with the second preset thickness, the concentration of tetramethyl ammonium hydroxide in the developing solution is 2.38% -2.45%, and the developing time is 70s-80s.
5. The method according to claim 1, wherein the color resist layer comprises a plurality of sets of color resists, each set of color resists comprises a red color resist, a green color resist and a blue color resist, and in the step of developing to obtain the organic insulating resist layer with the second predetermined thickness, the organic insulating resist layer is notched corresponding to the color resists on both sides of each set of color resists.
6. The method of manufacturing a display substrate according to claim 1, wherein the first preset thickness has a value d1, wherein d1 is 2.9um or less and 3.1um or less;
in the step of exposing the organic insulating photoresist layer, the energy value of the exposure is 100mj-110mj, and in the step of developing to obtain the organic insulating photoresist layer with the second preset thickness, the concentration of tetramethyl ammonium hydroxide in the developing solution is 2.4% -2.5%, and the developing time is 75s-85s; the value of the second preset thickness is d2, wherein d2 is more than or equal to 1.9um and less than or equal to 2um;
the residual film rate is 68% or less and 61% or more.
7. The method of manufacturing a display substrate according to claim 1, further comprising a baking step after the exposing step of the organic insulating resist layer, wherein the baking temperature is between 200 and 250 degrees, and the baking time is between 15 and 25 minutes.
8. The method of manufacturing a display substrate according to claim 1, wherein in the step of performing a vacuum-pumping treatment in the equipment in which the color resist layer and the organic insulating photoresist layer are located, the time of vacuum-pumping is 78s to 84s.
9. A display substrate prepared by the preparation method according to any one of claims 1 to 8, wherein the display substrate comprises a color resist layer and an organic insulating photoresist layer, the organic insulating photoresist layer is disposed on the color resist layer, and the chemical formula of the main component of the organic insulating photoresist layer is as follows:
10. a display panel comprising a counter substrate and the display substrate according to claim 9, wherein a liquid crystal layer is provided between the counter substrate and the display substrate.
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157612A (en) * | 2014-08-21 | 2014-11-19 | 深圳市华星光电技术有限公司 | Manufacture method of TFT array substrate, and structure of the TFT array substrate |
| CN104298040A (en) * | 2014-10-31 | 2015-01-21 | 京东方科技集团股份有限公司 | COA substrate, manufacturing method thereof and display device |
| CN111077710A (en) * | 2019-12-25 | 2020-04-28 | Tcl华星光电技术有限公司 | Array substrate, preparation method thereof, display panel and display device |
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