CN103488007B - Array base palte and manufacture method, display device - Google Patents
Array base palte and manufacture method, display device Download PDFInfo
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- CN103488007B CN103488007B CN201310463983.8A CN201310463983A CN103488007B CN 103488007 B CN103488007 B CN 103488007B CN 201310463983 A CN201310463983 A CN 201310463983A CN 103488007 B CN103488007 B CN 103488007B
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Abstract
The invention provides a kind of array base palte and manufacture method, display device, this array base palte comprises metal public electrode, the marginal portion of this metal public electrode is step-like structure, and this step-like structure makes the thickness of this metal public electrode increase from edge to center.The marginal portion of metal public electrode is set to step-like structure by the present invention, its step thicknesses is increase tendency from edge to center, the section at effective reduction metal public electrode edge is poor, and reduce the thickness of outermost step as much as possible, thus avoid due to the excessive leakage problem caused of metal public electrode edge section difference.
Description
Technical field
The present invention relates to display field, particularly relate to a kind of array base palte and manufacture method, display device.
Background technology
At present, adopt ADS(ADvancedSuperDimensionSwitch, senior super dimension field switch technology) TFT-LCD(ThinFilmTransistor-LiquidCrystalDisplay of pattern, Thin Film Transistor (TFT)-liquid crystal display) product, for avoiding public electrode to be pulled, often to needing, special design is carried out to public electrode.
Fig. 1 is a kind of array base-plate structure schematic diagram in prior art, this kind of array base palte is first at the first glass substrate 5 ' upper formation data line 2 ', pixel electrode 6 ', after the figure of the first insulation course 4 ' and the second insulation course 3 ', then metal public electrode 1 ' is increased at grid line and data line 2 ' top, make it directly to be connected with transparent common electrode 7 ', thus reduce the resistance of transparent common electrode 7 ', reduce the load of transparent common electrode 7 ', therefore avoid excessive due to load and that cause partially green (Greenish), the generation of the problems such as flicker (Flicker), this method is mainly optimized for opening (Slit) structure of the upper transparent public electrode of ADS pattern, to promote the transmitance of display panel.
But, this design for transparent common electrode increasing again metal public electrode, an obvious deficiency is exactly the section difference steeper of its border 1a ', therefore PI(Polyimide is carried out follow-up, polyimide) coating and friction process in, the partial liquid crystal at metal public electrode edge is difficult to orientation, thus produces serious light leak.
Summary of the invention
(1) technical matters that will solve
The technical problem to be solved in the present invention is: how to avoid due to the excessive and leakage problem that causes of metal public electrode edge section difference.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of array base palte, comprising metal public electrode, the marginal portion of described metal public electrode is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.
Further, described marginal portion comprises multistage step.
Further, described array base palte comprises data line and grid line, described metal public electrode is arranged at the top of described data line or described grid line, and the width of described metal public electrode is more than or equal to the width of described data line below described metal public electrode or described grid line.
Further, described metal public electrode is made up of molybdenum or aluminium.
Further, described array base palte also comprises the transparent common electrode of the tabular of pectination or band slit, and described metal public electrode is positioned at below or the top of described transparent common electrode.
For solving the problem, the present invention also provides a kind of display device, comprises any one array base palte above-mentioned.
Further, described display device comprises the black matrix be arranged on color membrane substrates or described array base palte, and the position of described metal public electrode is corresponding with described black matrix.
Further, the width of described metal public electrode is more than or equal to the width of described black matrix.
For solving the problem, the present invention also provides a kind of manufacturing method of array base plate, comprising:
On substrate, the figure of metal public electrode is formed by the patterning processes comprising halftone exposure technique, the marginal portion of described metal public electrode is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.
Further, also comprise formed the figure of metal public electrode on substrate by patterning processes after:
The figure of transparent common electrode is formed on the substrate by patterning processes.
Further, also comprised formed the figure of metal public electrode on substrate by patterning processes before:
The figure of transparent common electrode is formed on the substrate by patterning processes.
(3) beneficial effect
The marginal portion of metal public electrode is set to step-like structure by the present invention, its step thicknesses is increase tendency from edge to center, the section at effective reduction metal public electrode edge is poor, and reduce the thickness of outermost step as much as possible, thus avoid due to the excessive leakage problem caused of metal public electrode edge section difference.
Accompanying drawing explanation
Fig. 1 is the structural drawing of a kind of array base palte that prior art provides;
Fig. 2 is the structural drawing of a kind of array base palte that embodiment of the present invention provides;
Fig. 3 is the structural drawing of the another kind of array base palte that embodiment of the present invention provides;
The structural drawing of the display device that Fig. 4 provides for embodiment of the present invention;
The structural representation forming metal public electrode on substrate that Fig. 5 ~ 11 provide for embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Fig. 2 is a kind of array base palte that embodiment of the present invention provides, and comprises metal public electrode 1, and the marginal portion 1a of described metal public electrode 1 is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.Wherein, this array base palte can be ADS pattern.
Particularly, can shadow tone (Halftone) exposure technology be passed through, form the structure of above-mentioned metal public electrode.The marginal portion 1a of metal public electrode 1 is set to step-like structure by the present invention, and its step thicknesses is increase tendency from edge to center, the section efficiently reducing metal public electrode edge is poor, and reduce the thickness of outermost step as much as possible, in follow-up PI liquid (thickness is that 1000 Izods are right) coating processes, the heap sum solidification of PI liquid can form the effective gradient in the marginal portion of metal public electrode, and in follow-up friction orientation technique, the friction orientation effect of metal public electrode marginal portion also can promote greatly, and then effectively avoid due to the excessive leakage problem caused of metal public electrode edge section difference.
Preferably, described marginal portion 1a comprises multistage step, when metal public electrode edge thickness is certain, marginal portion 1a can be set to the step-like structure comprising multistage step, reduce the thickness of marginal portion outermost step as much as possible, reduce metal public electrode edge section poor, carry out in PI coating and friction process follow-up, effectively avoid due to the excessive leakage problem caused of metal public electrode edge section difference.
Preferably, described array base palte comprises data line and grid line, and described metal public electrode is arranged at above described data line or described grid line, impacts with the aperture opening ratio of the wiring reducing metal public electrode for pixel.The width of described metal public electrode can be less than, be more than or equal to corresponding described data line or the width of described grid line, but preferably, the width of described metal public electrode is more than or equal to corresponding described data line or the width of described grid line, thus reduce the resistance of metal public electrode as much as possible, and then reduce the resistance of transparent common electrode, reduce the load of transparent common electrode.
Preferably, this metal public electrode 1 can be low resistive metal public electrode, and particularly, this metal public electrode 1 is Mo(molybdenum) or Al(aluminium), thus reduce the load of transparent common electrode 7 as much as possible.
Particularly, exemplarily, metal public electrode 1 can be positioned at the below of transparent common electrode 7, transparent common electrode 7 can be pectination or the platy structure with slit opening, see Fig. 2, first on the first glass substrate 5, the first insulation course 4 is formed, first insulation course 4 is formed data line 2 and pixel electrode 6 respectively, data line 2 and pixel electrode 6 are formed the second insulation course 3, above the second insulation course 3, form metal public electrode 1, then on the substrate through above-mentioned process, form transparent common electrode 7.
In addition, metal public electrode 1 can also be positioned at the top of transparent common electrode 7, this transparent common electrode 7 can be pectination or the platy structure with slit opening, see Fig. 3, first on the first glass substrate 5, the first insulation course 4 is formed, first insulation course 4 is formed data line 2 and pixel electrode 6 respectively, data line 2 and pixel electrode 6 are formed the second insulation course 3, above the second insulation course 3, form transparent common electrode 7, then on the substrate through above-mentioned process, form metal public electrode 1.
Certainly, above-mentioned two kinds of embodiments are only exemplary, and those skilled in the art it should be understood that also can form metal public electrode above grid line.
In addition, embodiment of the present invention also provides a kind of display device, comprises any one array base palte above-mentioned.This display device can be: any product or parts with Presentation Function such as liquid crystal panel, mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.
See Fig. 4, Fig. 4 is the structural drawing of a kind of display device that embodiment of the present invention provides, this display device comprises color membrane substrates and array base palte, wherein color membrane substrates comprises black matrix 8, color blocking 9 and the second glass substrate 10, array base palte comprises the first glass substrate 5, be positioned at the first insulation course 4 on the first glass substrate 5, be positioned at the data line 2 on the first insulation course and pixel electrode 6, be positioned at the second insulation course 3 on data line 2 and pixel electrode 6, and the transparent common electrode 7 be positioned on the second insulation course and metal public electrode 1, wherein, metal public electrode 1 is positioned at the below of black matrix 8.In addition, described in above being similar to, those skilled in the art it should be understood that also can form metal public electrode above grid line.
The width of described metal public electrode can be less than, be more than or equal to the width of corresponding black matrix 8, but preferably, in order to reduce the resistance of metal public electrode 1, the width of metal public electrode 1 can be more than or equal to the width of described black matrix 8, in addition, when the width of metal public electrode 1 reaches predetermined value, between adjacent subpixels, then mixed light problem can not be produced, therefore color membrane substrates does not need to arrange black matrix 8, and namely the width of black matrix 8 is 0.
In addition, embodiment of the present invention also provides a kind of manufacturing method of array base plate, particularly, substrate is formed after comprising the figure of grid line, data line, transparent pixels electrode and insulation course, patterning processes again by comprising halftone exposure technique forms the figure of metal public electrode on aforesaid substrate, the marginal portion of described metal public electrode is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.
Wherein, if metal public electrode to be arranged at the below of transparent common electrode, after the figure being formed metal public electrode by patterning processes on substrate, then formed the figure of transparent common electrode on the substrate by patterning processes.
Wherein, if metal public electrode to be arranged at the top of transparent common electrode, before the figure being formed metal public electrode by patterning processes on substrate, also need the figure being formed transparent common electrode by patterning processes on the substrate.
Particularly, the step that the patterning processes by comprising halftone exposure technique forms the figure of above-mentioned metal public electrode on substrate specifically can comprise:
S1: see Fig. 5, substrate is formed after comprising the figure of grid line, data line 2, pixel electrode 6, first insulation course 4 and the second insulation course 3, the second insulation course 3 is formed the figure of metal public electrode 1;
S2: see Fig. 6, metal public electrode 1 is formed photoresist layer 11, and carry out halftone exposure and development treatment, wherein, region corresponding with a-quadrant in photoresist layer is not exposed, Partial exposure is carried out to region corresponding with B region in photoresist layer, entirely exposes with corresponding region, C region in photoresist layer, obtain structure as shown in Figure 7;
S3: carry out first time etching to the structure that step S2 obtains, see Fig. 8, the region that metal public electrode 1 covers without photoresist layer is etched away;
S4: ashing process is carried out to the structure that step S3 obtains, see Fig. 9, the region being in half exposure in metal level public electrode 1 is exposed;
S5: carry out second time etching to the structure that step S4 obtains, see Figure 10, the metal public electrode being positioned at half exposure area is partially etched;
S6: get rid of the residue photoresist layer on metal public electrode, obtain structure as shown in figure 11.
Above embodiment is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (11)
1. an array base palte, comprises metal public electrode, it is characterized in that, the marginal portion of described metal public electrode is step-like structure, and the thickness of the described step-like structure of described metal public electrode increases from edge to center.
2. array base palte according to claim 1, is characterized in that, described marginal portion comprises multistage step.
3. array base palte according to claim 1, it is characterized in that, described array base palte comprises data line and grid line, described metal public electrode is arranged at the top of described data line or described grid line, and the width of described metal public electrode is more than or equal to the width of described data line below described metal public electrode or described grid line.
4. array base palte according to claim 1, is characterized in that, described metal public electrode is made up of molybdenum or aluminium.
5. array base palte according to claim 1, is characterized in that, described array base palte also comprises the transparent common electrode of the tabular of pectination or band slit, and described metal public electrode is positioned at below or the top of described transparent common electrode.
6. a display device, is characterized in that, comprises the array base palte as described in claim 1-5 any one.
7. display device according to claim 6, is characterized in that, described display device comprises the black matrix be arranged on color membrane substrates or described array base palte, and the position of described metal public electrode is corresponding with described black matrix.
8. display device according to claim 7, is characterized in that, the width of described metal public electrode is more than or equal to the width of described black matrix.
9. a manufacturing method of array base plate, is characterized in that, comprising:
On substrate, formed the figure of metal public electrode by the patterning processes comprising halftone exposure technique, the marginal portion of described metal public electrode is step-like structure, and the thickness of the described step-like structure of described metal public electrode increases from edge to center.
10. manufacturing method of array base plate according to claim 9, is characterized in that, also comprises after being formed the figure of metal public electrode by patterning processes on substrate:
The figure of transparent common electrode is formed on the substrate by patterning processes.
11. manufacturing method of array base plate according to claim 9, is characterized in that, also comprise before being formed the figure of metal public electrode by patterning processes on substrate:
The figure of transparent common electrode is formed on the substrate by patterning processes.
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| CN201310463983.8A CN103488007B (en) | 2013-09-30 | 2013-09-30 | Array base palte and manufacture method, display device |
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| CN201310463983.8A CN103488007B (en) | 2013-09-30 | 2013-09-30 | Array base palte and manufacture method, display device |
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| CN103488007B true CN103488007B (en) | 2015-12-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106935599B (en) * | 2017-05-12 | 2020-05-26 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| EP3828624A4 (en) * | 2018-09-12 | 2021-08-11 | Huawei Technologies Co., Ltd. | Liquid crystal display panel, liquid crystal display screen, and electronic device |
| CN111697008B (en) * | 2020-06-22 | 2023-07-14 | 成都京东方显示科技有限公司 | Array substrate and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1480769A (en) * | 2002-06-17 | 2004-03-10 | ���ṫ˾ | Lcd |
| CN102375277A (en) * | 2010-08-10 | 2012-03-14 | 乐金显示有限公司 | Liquid crystal display device and method of manufacturing the same |
| CN202677033U (en) * | 2012-06-13 | 2013-01-16 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN203519980U (en) * | 2013-09-30 | 2014-04-02 | 合肥京东方光电科技有限公司 | Array substrate and display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006153902A (en) * | 2004-11-25 | 2006-06-15 | Sharp Corp | Liquid crystal display device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1480769A (en) * | 2002-06-17 | 2004-03-10 | ���ṫ˾ | Lcd |
| CN102375277A (en) * | 2010-08-10 | 2012-03-14 | 乐金显示有限公司 | Liquid crystal display device and method of manufacturing the same |
| CN202677033U (en) * | 2012-06-13 | 2013-01-16 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN203519980U (en) * | 2013-09-30 | 2014-04-02 | 合肥京东方光电科技有限公司 | Array substrate and display device |
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