CN114690234A - PRE _ ASIC chip and modular integrated front end based on semiconductor detector - Google Patents
PRE _ ASIC chip and modular integrated front end based on semiconductor detector Download PDFInfo
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- CN114690234A CN114690234A CN202210257399.6A CN202210257399A CN114690234A CN 114690234 A CN114690234 A CN 114690234A CN 202210257399 A CN202210257399 A CN 202210257399A CN 114690234 A CN114690234 A CN 114690234A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 239000002245 particle Substances 0.000 claims abstract description 48
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 27
- 230000003321 amplification Effects 0.000 claims abstract description 25
- 238000007493 shaping process Methods 0.000 claims abstract description 13
- 230000000630 rising effect Effects 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 description 16
- 238000013461 design Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- JAYCNKDKIKZTAF-UHFFFAOYSA-N 1-chloro-2-(2-chlorophenyl)benzene Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1Cl JAYCNKDKIKZTAF-UHFFFAOYSA-N 0.000 description 3
- 101100084627 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pcb-4 gene Proteins 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T7/00—Details of radiation-measuring instruments
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Abstract
The invention relates to a PRE _ ASIC chip and a modular integrated front end based on a semiconductor detector. The front end includes a semiconductor detector, an integrated PRE _ ASIC chip, a printed PCB board and a shielding structure. The semiconductor detector converts the loss energy of the electric particles incident on the semiconductor detector into a charge signal; the PRE _ ASIC chip comprises charge sensitive PRE-amplification, pulse shaping, peak holding, main amplification and threshold triggering circuits; the charge sensitive pre-amplifying circuit pre-amplifies the charge signal and converts the charge signal into a pulse signal; the pulse shaping circuit converts the pulse signal into a voltage signal; the main amplifying circuit amplifies the voltage signal for the second time; the peak holding circuit carries out voltage peak holding on the voltage signal after the main amplification and outputs the voltage signal; the threshold trigger circuit converts the main amplified voltage signal into a trigger signal and outputs the trigger signal; the semiconductor detector and the PRE _ ASIC chip are disposed on the same printed PCB board. The invention reduces the structural size and weight of the detection module, reduces the interference of external noise and improves the signal-to-noise ratio.
Description
Technical Field
The invention belongs to the technical field of particle radiation measurement, and particularly relates to a PRE _ ASIC chip and a modular integrated front end based on a semiconductor detector.
Background
Semiconductor sensors are currently the most widely used sensors in particle radiation measurement. The radiation detector takes a semiconductor material as a detection medium, and the basic principle is that charged particles generate electron-hole pairs in a sensitive volume of the semiconductor detector, and the electron-hole pairs drift under the action of an external electric field to output charge signals. Commonly used semiconductor detectors include PN junction type semiconductor detectors and lithium drift type semiconductor detectors.
The semiconductor detector is mainly applied to the field of particle radiation detection, can measure charged particles such as high-energy electrons, protons and the like, has the energy range of about 10keV to hundreds of MeV, and is suitable for particle detectors which are loaded on a spacecraft and used for measuring the space particle radiation, such as medium-energy and high-energy electron detectors, proton detectors and the like. Meanwhile, the device can also be used for measuring various radiation effects generated by charged particles, such as a particle radiation LET spectrum detector, a single particle detector and the like.
At present, the particle radiation measurement technology in China is in the development and promotion stage, and the detection technical capability has a certain gap with the international. The existing particle radiation measuring device basically adopts a sensor system and front-end electronics split design, and the front-end electronics are realized by adopting electronic elements, including various integrated devices such as a preamplifier, a main amplifier, a peak value retainer, a trigger and the like, so that the circuit design scale is complex, the size power consumption is large, and meanwhile, the circuit debugging, the performance test and the like are not convenient. Importantly, the sensor system and the front-end electronics are designed separately, so that the sensor system is more easily influenced by external noise interference, and the particle measurement index is difficult to improve.
The problems existing in the prior art are as follows: the existing particle radiation detection device is designed by adopting a sensor system and front-end electronics in a split mode, and the front-end electronics is designed and realized by adopting electronic elements. On one hand, the particle radiation measuring device is a mature product, the sensor system and the front-end electronics are designed in a split mode, the size and the weight of the structure are large, the occupied resources are more, meanwhile, the split structure causes weak signals output by the sensor to be easily interfered by external noise, and indexes such as measuring accuracy are difficult to improve; on the other hand, because the front-end electronics adopts an electronic component design including various integrated devices such as a preamplifier, a main amplifier, a peak value retainer, a trigger and the like, the circuit design is complex, the size and the power consumption are large, and meanwhile, the circuit debugging, the performance test and the like are not convenient.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a modular integrated front end, and particularly relates to a modular integrated front end based on a semiconductor detector; the modularized integrated front end provided by the invention overcomes the problems that a sensor system and front-end electronics in the current particle radiation measurement technology are split and designed, so that a weak signal output by the sensor is easy to be interfered by external noise, and the detection precision is difficult to improve, overcomes the defects that the front-end electronics in the prior art adopts different electronic element designs, so that the circuit design difficulty is large, the circuit debugging and testing are complicated, and the like, and overcomes the defects of large power consumption and large size of the current particle measurement device.
The semiconductor detector-based modular integrated front end can measure charged particle radiation in real time, has the advantages of high integration level, low power consumption, strong anti-interference capability and the like, and can be widely applied to particle radiation measurement loads, such as medium-high energy electron detectors, medium-high energy proton detectors, particle radiation LET spectrum measuring instruments, single particle detectors and the like. Besides, the silicon semiconductor detector can be used in the related fields of space X-ray detection, deep space detection element analysis, high-energy physical experiments, X-ray diffraction XRD, medical CT and the like based on the silicon semiconductor detector. Currently, however, integrated front-end module designs based on semiconductor detectors are not used in particle radiation measurement technology.
The invention provides a PRE _ ASIC chip, which comprises: the circuit comprises a charge sensitive preamplification circuit, a pulse shaping circuit, a main amplification circuit, a peak value holding circuit and a threshold value trigger circuit; wherein,
the charge sensitive preamplification circuit is used for carrying out charge sensitive preamplification on the charge signal and converting the charge signal into a pulse signal;
the pulse shaping circuit is used for converting the pulse signal into a voltage signal with certain rising edge information and transmitting the voltage signal to the main amplifying circuit;
the main amplifying circuit adopts a negative feedback amplifying form and is used for carrying out secondary amplification on the formed voltage signal and transmitting the voltage signal to the peak holding circuit and the threshold triggering circuit;
the peak holding circuit is used for carrying out peak holding on the voltage amplitude signal subjected to main amplification and outputting the voltage amplitude signal to a subsequent circuit;
and the threshold trigger circuit is used for converting the main amplified voltage signal into a trigger signal according to the initially set threshold signal and outputting the trigger signal to a subsequent circuit.
The invention provides a modular integrated front end based on a semiconductor detector, which comprises the following modules: the semiconductor detector (1) and the shielding structure (3) are printed with a PCB (4) and a PRE _ ASIC chip (2); the PRE _ ASIC chip (2) is used for receiving the charge signal transmitted by the semiconductor detector (1), processing the charge signal and then outputting the processed charge signal, and the output signal is used for calculating energy information of charged particles; the semiconductor detector (1) and the PRE _ ASIC chip (2) are arranged on the same printed PCB (4); the shielding structure (3) is used for shielding external interference;
the semiconductor detector (1) is used for generating a charge signal reflecting the energy loss of the charged particles in the semiconductor detector and transmitting the charge signal to the PRE _ ASIC chip (2);
the PRE _ ASIC chip (2) includes: the charge sensitive pre-amplification, pulse shaping, main amplification, peak value holding, threshold value triggering and other circuit functions; wherein,
the charge sensitive preamplification circuit is used for carrying out charge sensitive preamplification on a charge signal output by the semiconductor detector and converting the charge signal into a pulse signal;
the pulse shaping circuit is used for converting the pulse signal into a voltage signal with certain rising edge information and transmitting the voltage signal to the main amplifying circuit;
the main amplifying circuit adopts a negative feedback amplifying form and is used for carrying out secondary amplification on the formed voltage signal and transmitting the voltage signal to the peak holding circuit and the threshold triggering circuit;
the peak holding circuit is used for carrying out peak holding on the voltage amplitude signal subjected to main amplification and outputting the voltage amplitude signal to a subsequent circuit;
the threshold trigger circuit is used for converting the main amplified voltage signal into a trigger signal according to an initially set threshold signal and outputting the trigger signal to a subsequent circuit;
the PRE _ ASIC chip (2) carries out charge sensitive preamplification, pulse shaping and main amplification of signals based on received charge signals output by the semiconductor detector to obtain energy loss information of the charged particles in the semiconductor detector, and the method specifically comprises the following steps:
the integrated front end obtains voltage amplitude information of each corresponding charged particle; obtaining different threshold voltages of the space charged particles with each corresponding energy through theoretical calculation by using the obtained voltage amplitude information, and comparing the different threshold voltages; based on the comparison result in combination with the known thickness of the semiconductor detector (1), energy information of the corresponding spatially charged particles is obtained.
As an improvement of the method, the shielding structure (3) is of an open design at the part facing the semiconductor detector (1) and of a closed design at the rest.
As a further improvement of the above method, the material of the shielding structure (3) is metal.
As another improvement of the above method, the semiconductor detector (1) comprises: the detector thickness is about tens of micrometers to several millimeters, and the sensitive area is about several square millimeters to about thousands of square millimeters.
As another improvement of the above method, the printed layouts of the semiconductor detector (1) and the PRE _ ASIC chip (2) are designed on the same printed PCB (4) and are adjacent to each other, specifically: the distance between the PRE _ ASIC chip (2) and the semiconductor detector (1) is within 10 mm.
As a further improvement of the above method, the printed PCB (4) is mounted in the shielding structure (3) by screw fastening for reducing external noise interference.
Compared with the prior art, the invention has the beneficial effects that:
the modularized integration front end based on the semiconductor detector adopts a special integrated PRE _ ASIC chip, carries out modularized design on the semiconductor detector and the PRE _ ASIC chip, and has the functions of positive/negative charge input, pulse forming, main amplification, peak signal holding, threshold trigger output and the like; the structure size and the weight of the detector module can be reduced through the design of the modularized integrated front end, when the modularized integrated front end is used for designing a charged particle radiation measuring device, the detector is matched with a plurality of integrated front ends, flexible combination can be realized, and the complexity of the detector and the front end electronic design is reduced; and through the modular design and the shielding structure of the detector, the distance between the output of the detector and the charge pre-discharge circuit is shortened, and the interference of external noise is effectively reduced, so that the requirements of low noise and high concentration of the particle detection device are met, and the signal-to-noise ratio is improved.
Drawings
FIG. 1 is a schematic structural diagram of a modular integrated front end based on a semiconductor detector according to an embodiment of the present invention;
FIG. 2 is a printed board layout diagram of a modular integrated front end based on a semiconductor detector according to an embodiment of the present invention;
fig. 3 is a block diagram of the electrical connections of the modular integrated front-end based on semiconductor detectors according to the present invention.
Reference numerals:
1. semiconductor detector 2, PRE _ ASIC chip
3. Shielding structure 4, printed PCB board
Detailed Description
The invention will now be further described with reference to the accompanying drawings.
The working principle of the modular integrated front end based on the semiconductor detector is shown in fig. 3, and the method specifically comprises the following steps:
when charged particles enter a semiconductor detector, different energy losses are generated in the corresponding semiconductor detector, and the output of the semiconductor detector reflects a charge signal of the energy relation of the incident particles, namely the charge signal output by the semiconductor detector passes through an FRE _ ASIC device correspondingly connected with the semiconductor detector, and after charge sensitive pre-amplification, pulse forming, main amplification and peak signal holding, voltage amplitude information of each corresponding charged particle is obtained; obtaining different threshold voltages of the space charged particles with each corresponding energy through theoretical calculation, and comparing the different threshold voltages; based on the comparison result and in combination with the known thickness of the silicon semiconductor detector, energy information of the corresponding spatially charged particles is obtained.
As shown in fig. 1, the modular integrated front end based on semiconductor detector of the present invention comprises the following modules: the device comprises a semiconductor detector 1, a PRE _ ASIC chip 2, a printed PCB 4 and a shielding structure 3; the semiconductor detector 1 and the PRE _ ASIC chip 2 are mounted on the same printed PCB board 4, as shown in fig. 2; the printed PCB 4 is fixedly arranged in the corresponding metal shielding structure 3 through screws and is used for reducing external noise interference; wherein,
the semiconductor detector 1 is used for outputting a charge signal reflecting the deposition energy of the space charged particles and transmitting the charge signal to the PRE _ ASIC chip 2;
the PRE _ ASIC chip 2 includes: the circuit comprises circuits such as charge sensitive pre-amplification, pulse forming, main amplification, peak value holding, threshold triggering and the like; wherein,
the charge sensitive preamplification circuit is used for carrying out charge sensitive preamplification on a charge signal output by the semiconductor detector and converting the charge signal into a pulse signal;
the pulse shaping circuit is used for converting the pulse signal into a voltage signal with certain rising edge information and transmitting the voltage signal to the main amplifying circuit;
the main amplifying circuit adopts a negative feedback amplifying form and is used for carrying out secondary amplification on the formed voltage signal and transmitting the voltage signal to the peak holding circuit and the threshold triggering circuit;
the peak holding circuit is used for carrying out peak holding on the voltage amplitude signal transmitted by the main amplifying circuit and outputting the voltage amplitude signal to a subsequent circuit;
and the threshold trigger circuit is used for converting the voltage signal transmitted by the main amplification circuit into a trigger signal according to an initially set threshold signal.
The PRE _ ASIC chip 2 performs sensitive PRE-amplification, pulse shaping and main amplification of the charge of the signal based on the received charge signal output by the semiconductor detector 1 to obtain the energy loss information of the charged particles in the semiconductor detector 1, and the specific steps include:
based on the received charge signal output by the semiconductor detector 1, a charge sensitive preamplification method is adopted, and after pulse forming, main amplification and peak signal holding, voltage amplitude information of each corresponding charged particle is obtained; obtaining different threshold voltages of the space charged particles with each corresponding energy through theoretical calculation, and comparing the different threshold voltages; based on the comparison result in combination with the known thickness of the silicon semiconductor detector 1, energy information of the corresponding spatially charged particles is obtained.
The semiconductor detector 1 includes: the thickness of the detector is about tens of micrometers to several millimeters, and the sensitive area is several square millimeters to about thousands of square millimeters.
The printed layouts of the semiconductor detector 1 and the PRE _ ASIC chip 2 are designed on the same printed PCB 4 and are adjacent to each other.
In an embodiment, the metal material of the shielding structure 3 is selected from the following metals: copper or iron.
Therefore, the particle detector module can reduce the structural size and the weight of the detector module, shortens the distance between the output of the detector and the charge pre-discharge circuit through the modular design and the shielding structure of the detector, and effectively reduces the interference of external noise, thereby meeting the requirements of low noise and high concentration of the particle detector and improving the signal-to-noise ratio.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (7)
1. A PRE ASIC chip, said PRE ASIC chip comprising: the circuit comprises a charge sensitive preamplification circuit, a pulse shaping circuit, a main amplification circuit, a peak value holding circuit and a threshold value trigger circuit; wherein,
the charge sensitive preamplification circuit is used for carrying out charge sensitive preamplification on the charge signal and converting the charge signal into a pulse signal;
the pulse shaping circuit is used for converting the pulse signal into a voltage signal with certain rising edge information and transmitting the voltage signal to the main amplifying circuit;
the main amplifying circuit adopts a negative feedback amplifying form and is used for carrying out secondary amplification on the formed voltage signal and transmitting the voltage signal to the peak holding circuit and the threshold triggering circuit;
the peak holding circuit is used for carrying out peak holding on the voltage amplitude signal subjected to main amplification and outputting the voltage amplitude signal to a subsequent circuit;
and the threshold trigger circuit is used for converting the main amplified voltage signal into a trigger signal according to the initially set threshold signal and outputting the trigger signal to a subsequent circuit.
2. A modular integrated front-end based on a semiconductor detector, characterized in that the integrated front-end comprises the following modules: the device comprises a semiconductor detector (1), a PRE _ ASIC chip (2), a printed PCB (4) and a shielding structure (3);
the semiconductor detector (1) is used for generating a charge signal reflecting the energy loss of the charged particles in the semiconductor detector and transmitting the charge signal to the PRE _ ASIC chip (2); the PRE _ ASIC chip (2) is used for receiving the charge signal transmitted by the semiconductor detector (1), processing the charge signal and then outputting the processed charge signal, and the output signal is used for calculating energy information of charged particles; the semiconductor detector (1) and the PRE _ ASIC chip (2) are arranged on the same printed PCB (4); the shielding structure (3) is used for shielding external interference;
the PRE _ ASIC chip (2) includes: the circuit comprises a charge sensitive preamplification circuit, a pulse shaping circuit, a main amplification circuit, a peak value holding circuit and a threshold value trigger circuit; wherein,
the charge sensitive preamplification circuit is used for carrying out charge sensitive preamplification on a charge signal output by the semiconductor detector and converting the charge signal into a pulse signal;
the pulse shaping circuit is used for converting the pulse signal into a voltage signal with certain rising edge information and transmitting the voltage signal to the main amplifying circuit;
the main amplifying circuit adopts a negative feedback amplifying form and is used for carrying out secondary amplification on the formed voltage signal and transmitting the voltage signal to the peak holding circuit and the threshold triggering circuit;
the peak holding circuit is used for carrying out peak holding on the voltage amplitude signal subjected to main amplification and outputting the voltage amplitude signal to a subsequent circuit;
the threshold trigger circuit is used for converting the main amplified voltage signal into a trigger signal according to an initially set threshold signal and outputting the trigger signal to a subsequent circuit;
the integrated front end obtains voltage amplitude information of each corresponding charged particle; obtaining the threshold voltage corresponding to each space charged particle with different energy through theoretical calculation by using the obtained voltage amplitude information, and comparing; based on the comparison result in combination with the known thickness of the semiconductor detector (1), energy information of the corresponding spatially charged particles is obtained.
3. Modular integrated front-end based on semiconductor detectors according to claim 2, characterized in that the shielding structure (3) is open in its part facing the semiconductor detector (1) and closed in its remaining part.
4. Modular integrated front-end based on a semiconductor detector according to claim 2, characterized in that the material of the shielding structure (3) is metal.
5. A semiconductor detector based modular integrated front-end according to claim 2, characterized in that the semiconductor detector (1) comprises: the thickness of the PN junction type or lithium drift type semiconductor detector is dozens of micrometers to several millimeters, and the sensitive area is several square millimeters to thousands of square millimeters.
6. The semiconductor detector-based modular integrated front-end according to claim 2, characterized in that the printed layouts of the semiconductor detector (1) and the PRE _ ASIC chip (2) are designed on the same printed PCB board (4) and are adjacent, in particular: the distance between the PRE _ ASIC chip (2) and the semiconductor detector (1) is within 10 mm.
7. Modular integrated front-end based on semiconductor detectors according to claim 2, characterized in that the printed PCB board (4) is mounted inside the shielding structure (3) by screw fastening.
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