CN114679150A - 半导体元件结构及其制造方法 - Google Patents

半导体元件结构及其制造方法 Download PDF

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CN114679150A
CN114679150A CN202011545152.1A CN202011545152A CN114679150A CN 114679150 A CN114679150 A CN 114679150A CN 202011545152 A CN202011545152 A CN 202011545152A CN 114679150 A CN114679150 A CN 114679150A
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piezoelectric material
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metal
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周志飙
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United Microelectronics Corp
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Abstract

本发明公开一种半导体元件结构及其制造方法，其中该半导体元件结构包括电路基板。第一金属块层设置在所述电路基板上。缓冲层设置在所述第一金属会层上。吸收层设置在所述缓冲层上。第一电极层设置在所述吸收层上。多个压电材料单元设置在所述第一电极层。保护层共形地设置在所述多个压电材料单元上。第二金属块层设置在所述多个压电材料单元的上方，包括第一部件与第二部件。所述第一部件穿过所述保护层设置在所述多个压电材料单元上，当作第二电极层。所述第二部件与所述第一部件同高度，且至少电连接到所述第一电极层。

Description

半导体元件结构及其制造方法
技术领域
本发明涉及一种半导体制造技术，且特别是涉及半导体元件结构及其制造方法。
背景技术
表面声波(Surface Acoustic Wave,SAW)是沿着弹性材料表面传播的声波，其振幅通常随进入材料的深度呈指数衰减。
表面声波元件用于电路中的构件以提供多种不同的功能，例如包括延迟线、滤波器、关联器(correlator)及直流对直流转换器等。基于轻量与密集的结构，表面声波元件也应用在移动电话上。
随着更高频电路的应用，例如移动电话在5G的高频操作下，表面声波(SAW)滤波器的元件会改为适用较高频率操作的体声波(Bulk Acoustic Wave,BAW)滤波器。对于整体的集成电路，BAW滤波器在制造上会与电路基板集成在一起。电路基板例如包括一般以硅元件为基础的操作电路以及以GaN元件为基础的高频操作电路。
如何有效将BAW滤波器整合到电路基板的制造技术，仍继续在研发中。
发明内容
本发明提出BAW滤波器整合到电路基板的结构及其制造方法，可以有效将BAW滤波器以及其应用电路结合在一起。
在一实施例，本发明提供一种半导体元件结构，其包括电路基板。第一金属块层设置在所述电路基板上。缓冲层设置在所述第一金属会层上。吸收层设置在所述缓冲层上。第一电极层设置在所述吸收层上。多个压电材料单元设置在所述第一电极层。保护层共形地设置在所述多个压电材料单元上。第二金属块层设置在所述多个压电材料单元的上方，包括第一部件与第二部件。所述第一部件穿过所述保护层设置在所述多个压电材料单元上，当作第二电极层。所述第二部件与所述第一部件同高度，且至少电连接到所述第一电极层。
在一实施例，对于所述的半导体元件结构，其还包括内层介电层，以支撑所述第二金属块层，其中所述保护层比所述内层介电层硬。
在一实施例，对于所述的半导体元件结构，所述吸收层是多薄层堆栈结构。
在一实施例，对于所述的半导体元件结构，所述吸收层包含埋入的多个空气间隙区域，对应所述多个压电材料单元。
在一实施例，对于所述的半导体元件结构，所述第一电极层有一连接部，延伸出所述多个压电材料单元，以及插塞连接在所述连接部与所述第二金属块层的第二部件之间。
在一实施例，对于所述的半导体元件结构，所述第二金属块层还包括第三部件，通过插塞结构电连接到述第一金属块层。
在一实施例，对于所述的半导体元件结构，所述第一金属块层也电连接到所述电路基板的线路布线结构。
在一实施例，对于所述的半导体元件结构，所述电路基板包括第一元件电路层及第二元件电路层，在所述第一元件电路层上方。
在一实施例，对于所述的半导体元件结构，所述第一元件电路层包括硅元件，以及所述第二元件电路层包括GaN元件。
在一实施例，对于所述的半导体元件结构，其中所述电路基板的所述第一元件电路层包括热侦测元件。
在一实施例，对于所述的半导体元件结构，在所述多个压电材料单元下方的所述第一电极层是由在所述吸收层上的内层介电层围绕。
在一实施例，本发明再提供一种制造半导体元件的方法，包括提供电路基板。形成第一金属块层在所述电路基板上。形成缓冲层在所述第一金属会层上形成吸收层在所述缓冲层上。形成第一电极层在所述吸收层上。形成多个压电材料单元在所述第一电极层。形成保护层共形地设置在所述多个压电材料单元上。形成第二金属块层在所述多个压电材料单元的上方。所述第二金属块层包括第一部件与第二部件。第一部件穿过所述保护层设置在所述多个压电材料单元上，当作第二电极层。第二部件与所述第一部件同高度，且至少电连接到所述第一电极层。
在一实施例，对于所述的制造半导体元件的方法，其还包括形成内层介电层，以支撑所述第二金属块层，其中所述保护层比所述内层介电层硬。
在一实施例，对于所述的制造半导体元件的方法，形成所述吸收层的所述步骤是形成由两种不同材料的多层交互所堆栈的多薄层堆栈结构。
在一实施例，对于所述的制造半导体元件的方法，形成所述吸收层的所述步骤包括:形成介电层，其含有牺牲材料层埋入在所述介电层中。在形成所述保护层于所述多个压电材料单元上后，移除所述牺牲材料层以形成多个空气间隙区域。所述多个空气间隙区域是对应所述多个压电材料单元。
在一实施例，对于所述的制造半导体元件的方法，所述第一电极层有一连接部，延伸出所述多个压电材料单元，以及插塞连接在所述连接部与所述第二金属块层的第二部件之间。
在一实施例，对于所述的制造半导体元件的方法，所形成的所述第二金属块层还包括第三部件，通过插塞结构电连接到述第一金属块层。
在一实施例，对于所述的制造半导体元件的方法，所形成的所述第一金属块层也电连接到所述电路基板的线路布线结构。
在一实施例，对于所述的制造半导体元件的方法，所提供的所述电路基板包括第一元件电路层及第二元件电路层，在所述第一元件电路层上方。
在一实施例，对于所述的制造半导体元件的方法，所述第一元件电路层包括硅元件，以及所述第二元件电路层包括GaN元件。
附图说明
包含附图以便进一步理解本发明，且附图并入本说明书中并构成本说明书的一部分。附图说明本发明的实施例，并与描述一起用于解释本发明的原理。
图1是一实施例，整合BAW滤波器的半导体元件的剖面结构示意图；
图2到图5是一实施例，制造包含BAW滤波器的半导体元件的制造流程在剖面结构上的示意图；及
图6到图8是一实施例，制造包含BAW滤波器的半导体元件的制造流程在剖面结构上的示意图。
附图标号说明
50:电路基板50
60:声波滤波器
100:遮蔽金属层
102:缓冲层
104:硅层
106:硅元件
108:内联机结构
110:缓冲层
112:GaN元件
114:内联机结构
120:BAW滤波层
122:金属层
124:插塞
200:金属层
202:缓冲层
204:吸收层
204a:多薄层堆栈结构
204b:空气间隙结构
206:电极层
206a:延伸区域
208:内层介电层
210:压电材料层
210’:压电材料单元
212、214:保护层
214:保护层
216:金属块层
216a、216b、216c:部件
218:插塞
220:内层介电层
222:路径
250:吸收层
252:牺牲层
254:空气间隙
具体实施方式
本发明是关于包含有声波滤波器的半导体元件的结构及其制造方法。声波滤波器例如是BAW滤波器，可以依照半导体制造技术将BAW滤波器制造在电路基板上，且获得足够的保护。
以下提供多个实施例来说明本发明，但是本发明不限于所举的多个实施例，而实施例之间也可以有适当的结合。
图1是依据一实施例，整合BAW滤波器的半导体元件的剖面结构示意图。参阅图1，在半导体制技术中，一个电子装置的集成电路包含多种操作电路，这些操作电路根据半导体制造技术，会制造完成一个电路基板50，其会包还硅元件106以及适合高频操作的GaN元件112。电路基板50的电路例如是移动电话的基本电路，而例如配合无线通信的需要，例如BAW的声波滤波器60会继续形成在电路基板50上，达到整体的电路。
电路基板50的基本架构包含缓冲层102与缓冲层110在中间，其两面会形成包含硅元件106的电路以及包含GaN元件112的电路。缓冲层102与缓冲层110之间也可以有遮蔽金属层100，以遮蔽此两种电路。硅元件106例如是以硅层104为基础所制作出的元件，例如硅晶体管。GaN元件112例如是GaN晶体管，适合高频操作，例如可以用于无线通信电路。另外，在两边的内联机结构108与内联机结构114，提供所需要的连接布线(interconnectionrouting)。如一般的方式，内联机结构108与内联机结构114包含平面延伸的金属层与垂直接的插塞结构，来达到所需要的连接布线。另外，基于半导体的制造工艺，其会涉及内层介电层，用以达到金属元件结构的制造与支撑。
图1的电路基板50的结构仅是一实施例，而本发明不限于所举的实施例。电路基板50的实际集成电路是依照实际需要来决定，不限于特定的结构。电路基板50的结构不限于所举的实施例。
完成电路基板50的制造后，声波滤波电路60可以继续制造为成完整的集成电路。声波滤波电路60例如包含BAW滤波层120以及所需要的金属层122，通过插塞124与电路基板50电连接。金属层122的厚度较大，例如可以同时当作信号接收、遮蔽及散热等的功能。声波滤波电路60例如是被动元件，利于后续其他功能电路的应用。
本发明以电路基板50为基础，提出声波滤波电路60的制造工艺。图2到图5是依据一实施例，制造包含BAW滤波单元的半导体元件的制造流程在剖面结构上的示意图。
参阅图2，在电路基板50上例如先形成金属层200接着，金属层200与电路基板50通过插塞例如与电路基板50内联机结构114电连接。金属层200的厚度较大，除了提供电连接所需要的布线，其也可以同时提供电性遮蔽及散热的功能。金属层200也提供机械的支撑强度，以利后续形成声波滤波器的形成。接着，缓冲层202例如是氧化物层形成于金属层200上，当作后续要形成的结构基础，同时也提供一个平坦的加工平面。
吸收层204形成在缓冲层202上。由于BAW滤波单元会有压力的效应，吸收层204可以吸收机械应力。吸收层204在一实施例是由两种不同材料的多层交互所堆栈的多薄层堆栈(laminate)结构204a。吸收层204在一实施例也可以是多个空气间隙结构204b，其对应后续要形成的滤波单元。图2的多薄层堆栈结构204a或是空气间隙结构204b是要说明吸收层204的细部结构的实施例。
参阅图3，预定当作滤波单元的下电极的电极层206，形成在吸收层204上。电极层206的形成是配合图案化工艺(patterning process)形成内层介电层208，其后例如通过沉积与研磨工艺，将金属材料填入内层介电层208的图案而完成电极层206。
压电材料层210形成于电极层206与内层介电层208上。压电材料层210是用于后续所要形成的BAW滤波单元的初始材料层。压电材料层210有预定的厚度，使能达到BAW的滤波效用。由于压电材料层210需要被图案化，以得到多个滤波单元，其图案化工艺会涉及蚀刻工艺。保护层212可以也形成在压电材料层210上，提供在后续蚀刻工艺中的保护作用。
参阅图4，图案化工艺施加在压电材料层210上形成多个压电材料单元210’。这些压电材料单元210’的功能构成BAW滤波器。保护层214共形地形成在压电材料层210所构成的多个压电材料单元210’上。保护层214是较硬的材料，至少保护压电材料单元210’的侧壁。先前形成在电材料单元210’的顶面的保护层212可以先移除，也可以保留，而与保护层214合并。另外，电极层206会有延伸区域206a，延伸出压电材料层210所构成的压电材料单元。延伸区域206a如后描述，例如用以电极层206通过导电插塞，垂直向上连接到后端的其他应用电路。
参阅图5，使用图案化的内层介电层220结构而形成多个插塞218。插塞218与对应的不同构件接触连接，例如与电极层206或是金属层200等接触连接，以提供垂直方向的电连接。接着，金属块层216形成在所述多个压电材料单元210’的上方，其例如包括一部件216a，穿过保护层214而设置在压电材料层210的多个压电材料单元210’上，当作第二电极层。金属块层216也包括另一部件216b与前述部件216a同高度，且至少电连接到电极层206。金属块层216也可以在包括部件216c，通过插塞218与金属层200接触而连接。
就压电材料单元210’的温度控制，依实际需要，电路基板50也可以设置有温度侦测元件以及温度补偿元件，其也通过路径222对压电材料单元210’侦测与补偿。于此，路径222仅是示意地绘出，而实际形成的路径222可能是蜿蜒的路径，于此不特别限制。
在前面图2说明的吸收层204，例如是以多薄层堆栈结构204a形成。吸收层204在一实施例也可以是包含多个空气间隙结构204b的结构。
图6到图8是依据一实施例，制造包含BAW滤波器的半导体元件的制造流程在剖面结构上的示意图。参阅图6，如果吸收层204要形成空气间隙结构204b，其例如形成介电层250。在介电层250内的预定区域也形成有埋入的牺牲层252。介电层250与牺牲层252的材料不同，使得牺牲层252可以在后阶段的制造流程，使用蚀刻工艺移除，形成空气间隙结构。
参阅图7，如图3与图4的制造，形成保护层214在压电材料单元210’上。于此，压电材料单元210’的位置对应牺牲层252的位置，可以吸收压电材料单元210’上的压力。在形成保护层214在压电材料单元210’上后，在压电材料单元210’的侧边可以形成小开口，如此可以将牺牲层252例如通过蚀刻工艺将其移除，而得到空气间隙254。
参阅图8，依照图5的制造工艺，在完成后续金属块层216的形成后，内层介电层220会将空气间隙254密封。如此吸收层250是含有空气间隙254的结构。
本发明的制造流程，可以BAW滤波器集成在电路基板50上，其例如以缓冲层202所提供的平坦面直接形成在电路基板50上。BAW滤波器配合大厚度的金属层以及对滤波单元的保护层，可以在电路基板50上制造。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (20)

1.一种半导体元件结构，其特征在于，包括:
电路基板；
第一金属块层，设置在所述电路基板上；
缓冲层，设置在所述第一金属会层上；
吸收层，设置在所述缓冲层上；
第一电极层，设置在所述吸收层上；
多个压电材料单元，设置在所述第一电极层；
保护层，共形地设置在所述多个压电材料单元上；以及
第二金属块层，设置在所述多个压电材料单元的上方，包括:
第一部件，通过所述保护层设置在所述多个压电材料单元上，当作第二电极层；以及
第二部件，与所述第一部件同高度，且至少电连接到所述第一电极层。
2.根据权利要求1所述的半导体元件结构，其特征在于，还包括内层介电层，以支撑所述第二金属块层，其中所述保护层比所述内层介电层硬。
3.根据权利要求1所述的半导体元件结构，其特征在于，所述吸收层是多薄层堆栈结构。
4.根据权利要求1所述的半导体元件结构，其特征在于，所述吸收层包含埋入的多个空气间隙区域，对应所述多个压电材料单元。
5.根据权利要求1所述的半导体元件结构，其特征在于，所述第一电极层有一连接部，延伸出所述多个压电材料单元，以及插塞连接在所述连接部与所述第二金属块层的第二部件之间。
6.根据权利要求1所述的半导体元件结构，其特征在于，所述第二金属块层还包括第三部件，通过插塞结构电连接到述第一金属块层。
7.根据权利要求6所述的半导体元件结构，其特征在于，所述第一金属块层也电连接到所述电路基板的线路布线结构。
8.根据权利要求1所述的半导体元件结构，其特征在于，所述电路基板包括第一元件电路层及第二元件电路层，在所述第一元件电路层上方。
9.根据权利要求8所述的半导体元件结构，其特征在于，所述第一元件电路层包括硅元件，以及所述第二元件电路层包括GaN元件。
10.根据权利要求9所述的半导体元件结构，其特征在于，其中所述电路基板的所述第一元件电路层包括热侦测元件。
11.根据权利要求1所述的半导体元件结构，其特征在于，在所述多个压电材料单元下方的所述第一电极层是由在所述吸收层上的内层介电层围绕。
12.一种制造半导体元件的方法，其特征在于，包括:
提供电路基板；
形成第一金属块层在所述电路基板上；
形成缓冲层在所述第一金属会层上；
形成吸收层在所述缓冲层上；
形成第一电极层在所述吸收层上；
形成多个压电材料单元，在所述第一电极层；
形成保护层，共形地设置在所述多个压电材料单元上；以及
形成第二金属块层在所述多个压电材料单元的上方，所述第二金属块层包括:
第一部件，穿过所述保护层设置在所述多个压电材料单元上，当作第二电极层；以及
第二部件，与所述第一部件同高度，且至少电连接到所述第一电极层。
13.根据权利要求12所述的制造半导体元件的方法，其特征在于，还包括形成内层介电层，以支撑所述第二金属块层，其中所述保护层比所述内层介电层硬。
14.根据权利要求12所述的制造半导体元件的方法，其特征在于，形成所述吸收层的所述步骤是形成由两种不同材料的多层交互所堆栈的多薄层堆栈结构。
15.根据权利要求12所述的制造半导体元件的方法，其特征在于，形成所述吸收层的所述步骤包括:
形成介电层，含有牺牲材料层埋入在所述介电层中；以及
在形成所述保护层于所述多个压电材料单元上后，移除所述牺牲材料层以形成多个空气间隙区域，
其中所述多个空气间隙区域是对应所述多个压电材料单元。
16.根据权利要求12所述的制造半导体元件的方法，其特征在于，所述第一电极层有一连接部，延伸出所述多个压电材料单元，以及插塞连接在所述连接部与所述第二金属块层的第二部件之间。
17.根据权利要求12所述的制造半导体元件的方法，其特征在于，所形成的所述第二金属块层还包括第三部件，通过插塞结构电连接到述第一金属块层。
18.根据权利要求17所述的制造半导体元件的方法，其特征在于，所形成的所述第一金属块层也电连接到所述电路基板的线路布线结构。
19.根据权利要求12所述的制造半导体元件的方法，其特征在于，所提供的所述电路基板包括第一元件电路层及第二元件电路层，在所述第一元件电路层上方。
20.根据权利要求19所述的制造半导体元件的方法，其特征在于，所述第一元件电路层包括硅元件，以及所述第二元件电路层包括GaN元件。
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Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170611A (ja) * 1988-12-22 1990-07-02 Clarion Co Ltd 弾性表面波装置
US20060006965A1 (en) * 2004-07-06 2006-01-12 Matsushita Electric Industrial Co., Ltd. RF filter and method for fabricating the same
US7248131B2 (en) * 2005-03-14 2007-07-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Monolithic vertical integration of an acoustic resonator and electronic circuitry
US8367451B2 (en) * 2007-07-23 2013-02-05 Wispry, Inc. Method and structures for fabricating MEMS devices on compliant layers
US8476809B2 (en) * 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US7863699B2 (en) * 2008-05-21 2011-01-04 Triquint Semiconductor, Inc. Bonded wafer package module
CN102481789B (zh) * 2009-07-10 2015-06-17 富士胶卷迪马蒂克斯股份有限公司 用于密集封装的微机电系统喷射结构
JP5839103B2 (ja) * 2012-02-20 2016-01-06 株式会社村田製作所 圧電バルク弾性波素子の製造方法及び圧電バルク弾性波素子
US9640531B1 (en) * 2014-01-28 2017-05-02 Monolithic 3D Inc. Semiconductor device, structure and methods
US9634641B2 (en) * 2013-11-06 2017-04-25 Taiyo Yuden Co., Ltd. Electronic module having an interconnection substrate with a buried electronic device therein
US9608594B2 (en) * 2014-05-29 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer
US9691963B2 (en) * 2014-05-29 2017-06-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator and filter device with comb electrodes and support pillars separating piezoelectric layer
US9862592B2 (en) * 2015-03-13 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. MEMS transducer and method for manufacturing the same
US9650241B2 (en) * 2015-09-17 2017-05-16 Invensense, Inc. Method for providing a MEMS device with a plurality of sealed enclosures having uneven standoff structures and MEMS device thereof
KR102176280B1 (ko) * 2015-12-18 2020-11-09 삼성전기주식회사 음향 공진기 및 그 제조 방법
DE112015007201T5 (de) * 2015-12-21 2018-09-06 Intel Corporation Integrierte hf-frontend-strukturen
CN107181472B (zh) * 2016-03-10 2020-11-03 中芯国际集成电路制造(上海)有限公司 薄膜体声波谐振器、半导体器件及其制造方法
US11418169B2 (en) * 2016-03-11 2022-08-16 Akoustis, Inc. 5G n41 2.6 GHz band acoustic wave resonator RF filter circuit
US11424728B2 (en) * 2016-03-11 2022-08-23 Akoustis, Inc. Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
US10855250B2 (en) * 2016-07-11 2020-12-01 Akoustis, Inc. Communication filter for LTE band 41
JP6635908B2 (ja) * 2016-11-24 2020-01-29 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
JP6661521B2 (ja) * 2016-12-05 2020-03-11 太陽誘電株式会社 フィルタおよびマルチプレクサ
US10263587B2 (en) * 2016-12-23 2019-04-16 Avago Technologies International Sales Pte. Limited Packaged resonator with polymeric air cavity package
US10547286B2 (en) * 2017-02-03 2020-01-28 Samsung Electro-Mechanics Co., Ltd. Filter and front end module including the same
US10511286B2 (en) * 2017-02-03 2019-12-17 Samsung Electro-Mechanics Co., Ltd. Variable frequency filter
US10547287B2 (en) * 2017-02-03 2020-01-28 Samsung Electro-Mechanics Co., Ltd. Filter and front end module including the same
US10189705B1 (en) * 2017-10-25 2019-01-29 Globalfoundries Singapore Pte. Ltd. Monolithic integration of MEMS and IC devices
US10630259B2 (en) * 2018-02-05 2020-04-21 Zhuhai Crystal Resonance Technologies Co., Ltd. Single crystal piezoelectric RF resonators and filters with improved cavity definition
US10468454B1 (en) * 2018-04-25 2019-11-05 Globalfoundries Singapore Pte. Ltd. GaN stack acoustic reflector and method for producing the same
US11405013B2 (en) * 2019-02-27 2022-08-02 Skyworks Global Pte. Ltd. Bulk acoustic wave resonator structure for second harmonic suppression
US11463063B2 (en) * 2019-07-25 2022-10-04 Zhuhai Crystal Resonance Technologies Co., Ltd. Method for packaging an electronic component in a package with an organic back end
US11222849B2 (en) * 2020-04-24 2022-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate loss reduction for semiconductor devices

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