CN114678316A - Wafer adsorption component and device for controlling particle pollution - Google Patents

Wafer adsorption component and device for controlling particle pollution Download PDF

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Publication number
CN114678316A
CN114678316A CN202111507074.0A CN202111507074A CN114678316A CN 114678316 A CN114678316 A CN 114678316A CN 202111507074 A CN202111507074 A CN 202111507074A CN 114678316 A CN114678316 A CN 114678316A
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CN
China
Prior art keywords
wafer
adsorption
particle
substrate
wafer contact
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Pending
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CN202111507074.0A
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Chinese (zh)
Inventor
侯晓弈
陈静
孙金召
李欣
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Beijing U Precision Tech Co Ltd
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Beijing U Precision Tech Co Ltd
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Priority to CN202111507074.0A priority Critical patent/CN114678316A/en
Publication of CN114678316A publication Critical patent/CN114678316A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a wafer adsorption component for controlling particle pollution, which comprises: the substrate structure comprises a substrate, an air inlet and an adsorption air passage, wherein the substrate is in a disc shape with one unsealed end, the adsorption air passage is arranged in the substrate, air flow is introduced from the air inlet and guided by the adsorption air passage, and Bernoulli adsorption force for adsorbing wafers is formed in the substrate; the particle buffer structure is connected with the matrix structure, is disc-shaped and comprises a particle adsorption structure; and the wafer contact structure comprises a wafer contact head, and the wafer contact head is connected with the matrix structure and/or the particle buffer structure. The invention ensures that particles generated by aggregation during wafer adsorption enter the buffer area and cannot directly contact the wafer, thereby effectively controlling the problem of particle pollution caused by Bernoulli adsorption.

Description

Wafer adsorption component and device for controlling particle pollution
Technical Field
The invention relates to the field of design and manufacture of semiconductor equipment, in particular to a wafer adsorption component and a device for controlling particle pollution.
Background
The wafer adsorption or clamping structure is an important component in various semiconductor devices, and wafers are taken from a flower basket and are handed over to a process position, and the adsorption or clamping structure is required to participate as long as the position of the wafers is transferred. Along with the development of various semiconductor device processing technologies, the requirements for controlling particle pollution are higher and higher, the thickness of a wafer is thinner and thinner, and special requirements for turning over the wafer are also required.
The existing wafer adsorption or clamping schemes comprise edge clamping/adsorption and lifting type clamping/adsorption, and can not simultaneously meet the requirements of particle pollution control, ultrathin wafers, wafer overturning and the like. Such as the wafer edge clamping/adsorbing structure shown in fig. 1-1, only contacts the wafer edge, but not the process area in the center of the wafer, so as to achieve the purpose of controlling the particle contamination level in the process area. However, it cannot cope with ultra-thin wafers, and has the following disadvantages:
(1) since the thinner the wafer, the greater the warpage, when the warpage value of the wafer exceeds the capability range of the edge clamping/adsorbing structure, the wafer may fall from the middle of the structure to cause fragments, as shown in fig. 1-2;
(2) because the ultrathin wafer is normally clamped/adsorbed, the wafer falling risk exists, and the requirement of turning the wafer cannot be met;
(3) due to the thinning process characteristic, the edge position of the ultrathin wafer is more fragile, so that the edge of the wafer is easy to break during clamping/adsorption.
The lift-off clamp/suction structure shown in fig. 1-3 only contacts the bottom of the wafer and does not contact the process area on the top of the wafer, so as to control the particle contamination level in the single-sided process area. In order to deal with ultrathin wafers, the adsorption modes of the prior related technical scheme are bernoulli adsorption modes with small adsorption concentrated stress, and the lifting type clamping/adsorption structure has the following defects:
(1) Since only one side of the wafer is guaranteed to be free from contact, particle contamination of the other side during contact cannot be controlled.
(2) Since bernoulli adsorption adsorbs a wafer by continuously generating negative pressure by blowing air, particles near the chuck in the environment are gathered on the adsorption structure due to the negative pressure in addition to the wafer, and then more serious particle pollution is generated when the adsorption structure is contacted with the wafer.
Disclosure of Invention
The wafer adsorption component and the device for controlling particle pollution can effectively control the particle pollution degree when equipment parts contact with the wafer, can cope with the adsorption of ultrathin wafers, and are convenient to assemble, adjust and maintain. The specific technical scheme of the invention is as follows:
a wafer chucking member for controlling particle contamination, comprising:
the substrate structure comprises a substrate, an air inlet and an adsorption air passage, wherein the substrate is in a disc shape with one unsealed end, the adsorption air passage is arranged in the substrate, air flow is introduced from the air inlet and guided by the adsorption air passage, and Bernoulli adsorption force for adsorbing wafers is formed in the substrate;
the particle buffer structure is connected with the matrix structure, is disc-shaped and comprises a particle adsorption structure;
And the wafer contact structure comprises a wafer contact head, and the wafer contact head is connected with the base body structure and/or the particle buffer structure.
Optionally, the base structure further includes a particle buffer structure connecting portion and a wafer contact structure connecting portion located on the non-sealing side of the base, the particle buffer structure is connected to the particle buffer structure connecting portion, the particle buffer structure includes a through hole penetrating through the disc surface of the particle buffer structure, the wafer contact structure further includes a wafer contact structure base, the wafer contact head is arranged on the wafer contact structure base, and the wafer contact structure base penetrates through the through hole to be connected to the particle buffer structure and/or the wafer contact structure connecting portion.
Optionally, the substrate is internally provided with a plurality of circles of wedge-shaped blocks arranged at intervals along the circumferential direction, and the tips of the wedge-shaped blocks face to the unclosed side, so that the adsorption air channel is formed in the substrate.
Optionally, an exhaust port is further provided on the side of the base.
Optionally, the air inlet penetrates through the base body obliquely along the wedge-shaped profile of the wedge-shaped block.
Optionally, the exhaust port is arranged at an inclined angle with the radial direction from the wedge block, and the inclined direction is gradually inclined towards the airflow flowing direction from inside to outside.
Optionally, the particle adsorbing structure comprises an electrostatic film, and an auxiliary structure electrically connected to the electrostatic film.
Optionally, the end of the wafer contact head for contacting the wafer has a plurality of protrusions.
Optionally, the wafer contact structure connection portion is integral with the wafer contact structure base.
The invention also provides a wafer adsorption device for controlling particle pollution, which comprises a bearing structure and the wafer adsorption component for controlling particle pollution, wherein the wafer adsorption components are arranged on the same side of the bearing structure.
The invention has the following beneficial technical effects:
(1) the particle buffer area enables particles generated by aggregation of the adsorption component during operation to enter the buffer area and not to directly contact with the wafer, and further effectively solves the problem of particle pollution caused by Bernoulli adsorption.
(2) The salient point contact surface is adopted, so that the contact area is greatly reduced, the particle pollution degree is greatly reduced when the adsorption structure is contacted with the wafer, and the adsorption performance is not influenced.
(3) Unique air flue design makes the gas that produces the adsorption flow according to the design orbit, makes adsorption structure still keep stable adsorption affinity when upset wafer, and can further make the granule stain the degree and reduce.
Drawings
The above features and technical advantages of the present invention will become more apparent and readily appreciated from the following description of the embodiments thereof taken in conjunction with the accompanying drawings.
FIG. 1-1 is a schematic view showing an edge holding/adsorbing structure;
FIG. 1-2 is a schematic diagram showing the dropping of a large warp wafer;
FIGS. 1-3 are schematic diagrams showing a lift-type clamping/adsorbing structure;
FIG. 2-1 is a schematic plan view of a wafer chucking member according to an embodiment of the present invention;
FIG. 2-2 is a schematic plan view of a wafer chucking apparatus according to an embodiment of the present invention;
FIGS. 2-3 are perspective views of a wafer chucking apparatus according to an embodiment of the present invention;
FIGS. 2-4 are schematic plan views illustrating the structure of the base according to an embodiment of the present invention;
FIGS. 2-5 are schematic plan views illustrating particle buffering structures according to embodiments of the present invention;
FIGS. 2-6 are schematic plan views illustrating wafer contact structures in accordance with embodiments of the present invention;
FIGS. 2-7 are schematic views illustrating a wafer chucking apparatus according to an embodiment of the present invention;
FIGS. 2-8 are perspective views of a wafer chuck assembly according to an embodiment of the present invention;
FIGS. 2-9 are perspective views showing the structure of the base according to the embodiment of the present invention;
FIGS. 2-10 are schematic views of intake and exhaust ports according to embodiments of the present invention;
FIGS. 2-11 are schematic gas flow direction diagrams illustrating embodiments of the present invention;
FIGS. 2-12 are perspective views illustrating a particle buffering structure according to an embodiment of the present invention;
FIGS. 2-13 are perspective views illustrating wafer contact structures in accordance with embodiments of the present invention;
FIGS. 2-14 are schematic cable run views illustrating a pellet cushioning structure according to an embodiment of the present invention;
FIGS. 2 to 15 show the particle detection without using the wafer adsorbing member of the present embodiment to adsorb a wafer;
fig. 2 to 16 show the particle detection when the wafer is adsorbed by the wafer adsorbing member of the present embodiment.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings. Those of ordinary skill in the art will recognize that the described embodiments can be modified in various different ways, or combinations thereof, without departing from the spirit and scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive on the scope of the claims. Furthermore, in the present description, the drawings are not drawn to scale and like reference numerals designate like parts.
The wafer suction device 100 of the present embodiment, as shown in fig. 2-1, includes a substrate structure 110, a particle buffer structure 120, and a wafer contact structure 130. The wafer suction device 100 may be one or more, and as shown in fig. 2-2, the wafer suction device 100 is mounted on the same side of the carrying structure 200 and jointly acts on the wafer 300 to achieve suction and particle control of the wafer 300. As shown in fig. 2-3, the wafer suction device 100 at 4 is mounted on a carrying structure 200, which is a 1-piece robot, and the wafer 300 is closely attached to the suction structure and moves along with the carrying structure when the suction structure is operated.
Fig. 2-7 show the side connection relationship, the particle buffer structure 120 is connected to the base structure 110, and the wafer contact structure 130 can be connected to the particle buffer structure 120, or connected to the base structure 110, or connected to both, which can achieve a firmer effect. The connection form comprises threaded connection, riveting, bonding, welding and the like.
As shown in fig. 2 to 4, the substrate structure 110 includes a substrate 111, an inlet 112, an outlet 113, an adsorption air channel 114, a particle buffer structure connecting portion 115, and a wafer contact structure connecting portion 116. The substrate 111 may be a disk shape, one end of the substrate is not closed, the adsorption air channel 114 is disposed inside the substrate 111, the substrate 111 is provided with an air inlet 112 and an air outlet 113, the air flow is introduced from the air inlet 112, the air flow direction is guided by the adsorption air channel 114, a part of the air flow is guided out through the air outlet 113, and the rest of the air flow forms negative pressure (forming bernoulli adsorption) in the substrate 111, thereby generating upward adsorption force on the wafer.
The particle buffer structure connecting portion 115 is located on the non-sealing side and is used for forming a stable connection with the particle buffer structure 120, the wafer contact structure connecting portion 116 is located on the particle buffer structure connecting portion 115, the particle buffer structure 120 has a through hole 124, and the wafer contact structure substrate 131 passes through the through hole 124 to form a stable connection with the wafer contact structure connecting portion 116.
The particle buffer structure 120 is shown in fig. 2-5, and includes a particle buffer base 121, a particle adsorbing structure 122, a particle buffer attachment structure 123, and a through hole 124. The particle buffer base 121 is used to form a stable connection with the particle buffer structure connecting portion 115 of the base structure 110. Particle adsorption structure 122 has the adsorption effect to tiny particle, and when the negative pressure that bernoulli adsorbs the air current and produces peripheral granule guide to the wafer, the granule can be adsorbed on particle adsorption structure 122 owing to particle adsorption structure 122's effect, and can not adsorbed on the wafer to also carry out effective particle control when realizing adsorbing the wafer. Specifically, the adsorption function of the particle adsorbing structure 122 can be realized by static electricity, and the static electricity can be introduced to the particle adsorbing structure 122 through a particle buffer zone attachment structure 123 (e.g., a cable), and the particle buffer zone attachment structure 123 is connected and fixed on the particle buffer zone base 121.
The wafer contact structure 130, as shown in fig. 2-6, includes a wafer contact structure substrate 131 and a wafer contact head 132, wherein the wafer contact structure substrate 131 is firmly connected to the wafer contact structure connecting portion 116, and the wafer contact structure substrate can be connected to the wafer contact structure connecting portion by an auxiliary connection through the particle buffer structure 120, so that the wafer can maintain a stable posture even if being adsorbed and moved. The wafer contact head 132 is an alternative structure for making mechanical contact with the wafer, and the structure can be replaced by different materials, different textures or different sizes according to different specifications of the wafer, so as to achieve the best contact effect and particle control effect.
When the wafer is being chucked, as shown in fig. 2-14, the bernoulli suction gas flow is generated from the base structure 110, and under the influence of the negative pressure, the wafer 300 approaches the wafer chucking member 100, contacts and is supported on the top of the wafer contact structure 130, and the space between the base structure 110 and the wafer will continue to hold the suction negative pressure due to the bernoulli suction gas flow. Particles directed toward the wafer during the air flow and the negative pressure adsorption process will be adsorbed by the particle buffer structure 120, thereby greatly reducing particle contamination.
In an alternative embodiment, the wafer attraction member 100 is constructed as shown in fig. 2-8. The substrate structure 110 of the wafer chuck 100 is configured as shown in fig. 2-9 and 2-10, and the substrate 111 is a disk shape with good rigidity, so that the connection between the substrate structure and the bottom supporting structure 200 and the particle buffer structure 120 on the top is stable and not easy to deform. And the wafer contact structure 130 in the wafer adsorption component 100 can be directly integrated with the base structure 110, so that the structure is more stable, and the posture stability of the wafer in the moving process in the adsorption state is further ensured. The non-closed side of the base structure 110 is provided with a particle buffering structure connecting portion 115, and the base structure 110 has 1 inlet 112 and 1 outlet 113, wherein the inlet 112 penetrates through the base 111 to communicate with the supporting structure 200, so as to deliver gas to the inlet 112 through the supporting structure 200.
In the substrate 111, there are a plurality of circles of wedges 117 circumferentially spaced apart, with the tips of the wedges 117 facing the unclosed side, as shown in fig. 2-11, and in this configuration, the gas flow is split into 2 directions, one is bernoulli adsorption gas flow that is directed along the wedge profile of the wedges 117 and then diffused horizontally, and the other is flowing around the annular channel between the circles of wedges, so that the gas is distributed into a uniform gas flow throughout the gas channel. The redundant air flow is guided and discharged by the air outlet 113, and does not affect the Bernoulli adsorption air flow spreading in the horizontal direction. The airway structure ensures the uniformity and stability of adsorption. The gas flow forms a whirling gas flow in the cylindrical space in the base 111, and forms a negative pressure, thereby forming an upward suction force to the wafer.
Preferably, as shown in fig. 2-10, both the inlet 112 and the outlet 113 are angled to direct the flow of gas through a fixed location in the suction airway 114. It can be seen that the air inlet 112 penetrates the base 111 obliquely in the direction of the inclination of the wedge profile of the wedge 117, so that the air flow is guided along the wedge profile. The exhaust port 113 is disposed between the wedge blocks 117 at an inclined angle with respect to the radial direction, and the inclined direction is gradually inclined from the inside to the outside in the flow direction of the air flow.
In addition, in this embodiment, the wafer contact structure connecting portion 116 in the base structure is the wafer contact structure base 131, and the wafer contact structure base and the base structure are integrally formed, so that the posture of the wafer during the absorption and movement processes is more stable.
In an alternative embodiment, the particle buffer structure 120 of the wafer chuck 100 is shown in fig. 2-12, wherein the particle buffer region base 121 is connected to the particle buffer structure connecting portion 115, which has good machining performance, so that the connection structure of the particle adsorbing structure 122 and the particle buffer region attachment structure 123 with more complicated middle portions can be realized by machining. In this embodiment, the particle adsorption structure 122 is formed by a layer of electrostatic adsorption film, the particle buffer area attachment structure 123 is a cable for electrostatic film, and is distributed and connected through a wiring groove on the particle buffer area base 121, and as can be seen from fig. 2 to 14, the carrying structure of the cable can be connected with a power supply.
In an alternative embodiment, as shown in fig. 2-13, the wafer contact head 132 may be an alternative structure, and may be connected to the wafer contact substrate after changing the size and material according to actual needs. Moreover, the end of the wafer contact head 132 has a plurality of point-like protrusions for contacting with the wafer, so as to reduce the contact area with the wafer and reduce the pollution.
If the wafer adsorbing member for controlling particle contamination of the embodiment is not used, as shown in fig. 2 to 15, a large amount of particles may be adsorbed on the surface of the wafer during the process of adsorbing the wafer. After the wafer adsorbing member for controlling particle contamination according to the embodiment is adopted, the wafer adsorbing member 100 starts to operate, and the airflow is introduced into the adsorption air channel 114 from the air inlet 112, so as to form bernoulli adsorption airflow in the horizontal direction on the surface of the supporting structure 200, and the wafer 300 is adsorbed on the wafer contact structure 130. Meanwhile, the electrostatic adsorption film continuously works, when nearby particles are guided to the position nearby the adsorption structure along with negative pressure, the particles are adsorbed on the film, and the particle pollution problem can be effectively avoided no matter how the states of the wafer, such as the turning posture, the moving speed and the like. As shown in fig. 2-16, it can be seen that, during the process of adsorbing the wafer, the surface of the wafer does not adsorb a large amount of particles,
when the process is not needed, the adsorption of the electrostatic film can be stopped at any time according to the needs, and the electrostatic film can be continuously used after being cleaned.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A wafer chucking member for controlling particle contamination, comprising:
the substrate structure comprises a substrate, an air inlet and an adsorption air passage, wherein the substrate is in a disc shape with one unsealed end, the adsorption air passage is arranged in the substrate, air flow is introduced from the air inlet and guided by the adsorption air passage, and Bernoulli adsorption force for adsorbing wafers is formed in the substrate;
the particle buffer structure is connected with the matrix structure, is disc-shaped and comprises a particle adsorption structure;
and the wafer contact structure comprises a wafer contact head, and the wafer contact head is connected with the matrix structure and/or the particle buffer structure.
2. The wafer adsorption component of claim 1, wherein the base structure further comprises a particle buffer structure connection portion and a wafer contact structure connection portion on the non-closed side of the base, the particle buffer structure is connected with the particle buffer structure connection portion, the particle buffer structure comprises a through hole penetrating through the disk surface of the particle buffer structure, the wafer contact structure further comprises a wafer contact structure base, the wafer contact head is arranged on the wafer contact structure base, and the wafer contact structure base is connected with the particle buffer structure and/or the wafer contact structure connection portion through the through hole.
3. The wafer adsorption component for controlling particle contamination according to claim 1, wherein the substrate has a plurality of circles of wedge-shaped blocks arranged at intervals along a circumferential direction, and tips of the wedge-shaped blocks face to an unclosed side, so that an adsorption air channel is formed in the substrate.
4. The wafer adsorption member for controlling particle contamination according to claim 1, wherein an exhaust port is further provided at a side surface of the substrate.
5. The wafer chucking member as recited in claim 4, wherein the gas inlet penetrates the substrate obliquely in a direction along a wedge profile of the wedge block.
6. The wafer chuck assembly according to claim 4, wherein the exhaust port is disposed between the wedge blocks at an angle to the radial direction, and the angle is gradually inclined from the inside to the outside in the flow direction of the gas flow.
7. The wafer attraction member for controlling particle contamination as recited in claim 1, wherein the particle attraction structure comprises an electrostatic film and an attachment structure electrically connected to the electrostatic film.
8. The wafer adsorbing member for controlling particle contamination according to claim 1, wherein the end of the wafer contact head for contacting with the wafer has a plurality of protrusions.
9. The wafer chucking component of claim 2, wherein the wafer contact structure coupling portion is integral with the wafer contact structure base.
10. A wafer adsorption device for controlling particle contamination, comprising a carrying structure and the wafer adsorption member for controlling particle contamination of any one of claims 1 to 9, wherein each wafer adsorption member is installed on the same side of the carrying structure.
CN202111507074.0A 2021-12-10 2021-12-10 Wafer adsorption component and device for controlling particle pollution Pending CN114678316A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111507074.0A CN114678316A (en) 2021-12-10 2021-12-10 Wafer adsorption component and device for controlling particle pollution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111507074.0A CN114678316A (en) 2021-12-10 2021-12-10 Wafer adsorption component and device for controlling particle pollution

Publications (1)

Publication Number Publication Date
CN114678316A true CN114678316A (en) 2022-06-28

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ID=82070135

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111507074.0A Pending CN114678316A (en) 2021-12-10 2021-12-10 Wafer adsorption component and device for controlling particle pollution

Country Status (1)

Country Link
CN (1) CN114678316A (en)

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