CN114665755A - Discrete motor drive circuit and motor - Google Patents
Discrete motor drive circuit and motor Download PDFInfo
- Publication number
- CN114665755A CN114665755A CN202210197359.7A CN202210197359A CN114665755A CN 114665755 A CN114665755 A CN 114665755A CN 202210197359 A CN202210197359 A CN 202210197359A CN 114665755 A CN114665755 A CN 114665755A
- Authority
- CN
- China
- Prior art keywords
- circuit
- igbt
- mos tube
- driving chip
- discrete
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/08—Arrangements for controlling the speed or torque of a single motor
- H02P6/085—Arrangements for controlling the speed or torque of a single motor in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P25/00—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details
- H02P25/16—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details characterised by the circuit arrangement or by the kind of wiring
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
- H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides a discrete motor driving circuit and a motor, wherein the motor driving circuit comprises: a driving chip and a discrete driving circuit; the discrete driving circuit comprises an upper bridge circuit and a lower bridge circuit, the upper bridge circuit and the lower bridge circuit respectively comprise a plurality of discrete switch elements, and each switch element is connected with the driving chip; the discrete driving circuit is provided with a heat dissipation part at the position of each switching element; and an RC circuit is connected between the drain electrode and the source electrode of the MOS tube, or an RC circuit is connected between the collector electrode and the emitter electrode of the IGBT. The embodiment of the invention adopts the combination of the driving chip and the discrete driving circuit, thereby greatly reducing the circuit cost; the RC circuit selection which utilizes the heat dissipation component, improves the PCB layout and the switch element connection balances the circuit temperature rise and the EMC with low cost; the circuit structure complexity is reduced, the control is convenient, and the reliability is high.
Description
Technical Field
The invention relates to the technical field of motor driving, in particular to a discrete motor driving circuit and a motor.
Background
The conventional motor drive usually adopts an IPM (Intelligent Power Module), which is a Power switching device and has the advantages of high current density, low saturation voltage and high voltage resistance, as well as the advantages of high input impedance, high switching frequency and low driving Power. Logic, control, detection and protection circuits are integrated in the IPM, the IPM is convenient to use, the size and the development time of a system are reduced, the reliability of the system is greatly enhanced, and the IPM is more and more widely applied to the field of power electronics.
IPM has the above advantages and has been applied to a motor driving circuit for driving an air conditioner, but the IPM-based motor driving circuit has a problem of high cost.
Disclosure of Invention
The invention solves the problem that the cost of the existing IPM-based motor driving circuit is high.
In order to solve the above problems, an embodiment of the present invention provides a discrete motor driving circuit, including a driving chip and a discrete driving circuit; the driving chip is connected with the discrete driving circuit and used for sending a switch control signal to the discrete driving circuit; the discrete driving circuit comprises an upper bridge circuit and a lower bridge circuit, the upper bridge circuit and the lower bridge circuit respectively comprise a plurality of discrete switch elements, and each switch element is connected with the driving chip; the switching element is an MOS tube or an IGBT; the discrete driving circuit is provided with a heat dissipation part at the position of each switch element; if the switching element is an MOS tube, an RC circuit is connected between the drain electrode and the source electrode of the MOS tube; if the switching element is an IGBT, an RC circuit is connected between the collector and the emitter of the IGBT.
According to the motor driving circuit provided by the embodiment of the invention, the combination of the driving chip and the discrete driving circuit is adopted to replace the traditional circuit which simply uses an IPM driving motor, so that the circuit cost is greatly reduced; the RC circuit connected by the heat dissipation component, the PCB layout improvement and the switch element is selected, so that the circuit temperature rise and EMC are balanced at low cost; the circuit structure complexity is reduced, the control is convenient, and the reliability is high.
Optionally, the upper bridge circuit at least comprises a first MOS transistor; the grid electrode of the first MOS tube is connected with a first signal output pin of the driving chip through a first resistor and a first diode which are connected in parallel; the drain electrode of the first MOS tube is connected with the power supply voltage of the motor; the source electrode of the first MOS tube is connected with the drain electrode of the second MOS tube of the lower bridge circuit and the cathode of a first bootstrap capacitor corresponding to the first signal output pin, and the anode of the first bootstrap capacitor is connected with the working voltage of the driving chip; and a second resistor is connected between the grid electrode and the source electrode of the first MOS tube.
The switching element in the embodiment of the invention can select the MOS tube, thereby balancing the circuit temperature rise and EMC with low cost.
Optionally, the upper bridge circuit comprises at least a first IGBT; the grid electrode of the first IGBT is connected with a first signal output pin of the driving chip through a first resistor and a first diode which are connected in parallel; the collector of the first IGBT is connected with the power supply voltage of the motor; an emitter of the first IGBT is connected with a collector of a second IGBT of the lower bridge circuit and a cathode of a first bootstrap capacitor corresponding to the first signal output pin, and an anode of the first bootstrap capacitor is connected with a working voltage of the driving chip; and a second resistor is connected between the grid electrode and the emitter electrode of the first IGBT.
The switching element in the embodiment of the invention can select the IGBT, thereby balancing the circuit temperature rise and the EMC at low cost.
Optionally, the first diode is connected in series with the third resistor and then connected in parallel with the first resistor; the anode of the first diode is connected with the gate of the first MOS tube or the first IGBT through the third resistor, and the cathode of the first diode is connected with the first signal output pin; the first resistance is greater than the third resistance; the second resistance is greater than the first resistance.
In the embodiment of the invention, the proper resistor is selected, so that the discharge closing speed of the MOS tube or the IGBT is higher relative to the conduction speed, the loss can be reduced, and the temperature rise can be reduced.
Optionally, the lower bridge circuit at least comprises a second MOS transistor; the grid electrode of the second MOS tube is connected with a second signal output pin of the driving chip through a fourth resistor and a second diode which are connected in parallel; the drain electrode of the second MOS tube is connected with the source electrode of the first MOS tube; the source electrode of the second MOS tube is grounded and is connected with the cathode of a second bootstrap capacitor corresponding to the second signal output pin, and the anode of the second bootstrap capacitor is connected with the working voltage of the driving chip; and a fifth resistor is connected between the grid electrode and the source electrode of the second MOS tube.
The embodiment of the invention provides a specific circuit structure of a lower bridge, and the operation of a motor is controlled by alternately conducting switching elements of an upper bridge circuit and a lower bridge circuit.
Optionally, the lower bridge circuit comprises at least a second IGBT; the grid electrode of the second IGBT is connected with a second signal output pin of the driving chip through a fourth resistor and a second diode which are connected in parallel; the collector of the second IGBT is connected with the emitter of the first IGBT; an emitter of the second IGBT is grounded and is connected with a cathode of a second bootstrap capacitor corresponding to the second signal output pin, and an anode of the second bootstrap capacitor is connected with the working voltage of the driving chip; and a fifth resistor is connected between the grid electrode and the emitter electrode of the second IGBT.
The embodiment of the invention provides a specific circuit structure of a lower bridge, and the operation of a motor is controlled by alternately conducting switching elements of an upper bridge circuit and a lower bridge circuit.
Optionally, a first voltage pin and a second voltage pin corresponding to the first signal output pin are respectively connected to the anode and the cathode of the first bootstrap capacitor; the positive electrode of the first bootstrap capacitor is connected with the negative electrode of a third diode, the positive electrode of the third diode is connected with a filter circuit, and the filter circuit is connected with the working voltage of the driving chip.
The embodiment of the invention provides a specific circuit structure of a driving chip part, wherein a filter circuit is used for providing a power supply for the driving chip and filtering interference clutter in the power supply, and a third diode is used for avoiding reverse charging of a first bootstrap capacitor. The filter circuit can also be connected with a divider resistor to prevent the filter circuit from boosting too fast.
Optionally, the heat dissipation component is provided by copper-clad, and the window is opened after copper-clad.
In the embodiment of the invention, the heat dissipation part of the switch element can be selectively covered with a copper windowing, so that the heat dissipation effect is improved.
Optionally, a pitch between the plurality of discrete switching elements is greater than a preset heat dissipation pitch threshold.
In the embodiment of the invention, proper intervals can be arranged among the switch elements, so that the heat dissipation effect is improved.
The embodiment of the invention provides a motor, which is characterized by comprising an MCU and the motor driving circuit; and the MCU is connected with a driving chip of the motor driving circuit and is used for sending a PWM signal to the driving chip.
The motor provided by the embodiment of the invention can achieve the same technical effect as the motor driving circuit.
Drawings
Fig. 1 is a schematic structural diagram of a driving chip portion of a motor driving circuit according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a MOS transistor circuit portion of a motor driving circuit according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a driving chip portion of a motor driving circuit according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an IGTB circuit portion of a motor drive circuit according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
The embodiment of the invention provides a motor driving circuit adopting a discrete switch element and a driving chip, which replaces the traditional mode of using an IPM driving motor and greatly reduces the cost. The switching element may be a Metal-Oxide-Semiconductor Field-Effect Transistor (MOS) or an Insulated Gate Bipolar Transistor (IGBT).
Because the discrete patch MOS/IGBT does not have a radiator of a traditional fan module, the heating of devices becomes a great difficulty of a circuit, and meanwhile, because the discrete circuit devices are connected with each other and the non-integrated module is good, the Electromagnetic Compatibility (EMC) effect is poor.
Considering that sufficient heat dissipation space is required among MOS/IGBTs for heat dissipation, the MOS/IGBTs need to be far away from each other, and the EMC effect is not good due to the fact that the devices are far away from each other, the embodiment of the invention provides a discrete motor driving circuit which can balance heat dissipation and EMC.
The embodiment of the invention provides a discrete motor driving circuit, which comprises a driving chip and a discrete driving circuit. The driving chip is connected to a Micro Control Unit (MCU) of the motor, and can receive a Pulse Width Modulation (PWM) signal sent by the MCU and output a high/low voltage control signal to control a discrete switching element of the driving circuit, thereby supplying power to the motor.
Specifically, the driving chip is connected with the discrete driving circuit, and the driving chip is used for sending a switch control signal to the discrete driving circuit. The discrete driving circuit comprises an upper bridge circuit and a lower bridge circuit, wherein the upper bridge circuit and the lower bridge circuit respectively comprise a plurality of discrete switch elements, and each switch element is connected with a driving chip.
In this embodiment, the switching elements may be MOS transistors or IGBTs, and for convenience of control, all the switching elements may be MOS transistors or all the switching elements may be IGBTs. The discrete switching elements are spaced apart from each other by a certain distance by improving their position layout on a Printed Circuit Board (PCB), thereby facilitating heat dissipation. Optionally, the distance between the plurality of discrete switching elements is greater than a preset heat dissipation distance threshold, the preset heat dissipation distance threshold may be obtained by pre-calculating the actual heating power of the used switching element in the process of driving the motor, or may be obtained by experimental verification, which is not limited in this embodiment.
In order to increase the heat dissipation effect of the switching elements and reduce the temperature rise of the body, the discrete driving circuit is provided with a heat dissipation part at the position of each switching element. Illustratively, the heat dissipation component is arranged by copper cladding, and the window is opened after the copper cladding. The copper-clad range can be larger than the area occupied by the switch element, and the surface of the copper-clad layer is windowed to ensure that the copper-clad layer is exposed in the air, thereby being beneficial to improving the heat dissipation effect.
If the switching element is an MOS tube, an RC (Resistor-capacitor Circuit) Circuit is connected between the drain electrode and the source electrode of the MOS tube; if the switching element is an IGBT, an RC circuit is connected between the collector and emitter of the IGBT. By adding proper RC circuits between the drain and the source and between the collector and the emitter, the voltage jump of the MOS tube/IGBT can be reduced, and the EMC of the circuit can be improved. The resistance value and the capacitance value of the RC circuit can be calculated or obtained by experiment, which is not limited in this embodiment.
According to the motor driving circuit provided by the embodiment of the invention, the combination of the driving chip and the discrete driving circuit is adopted to replace the traditional circuit which simply uses an IPM driving motor, so that the circuit cost is greatly reduced; the RC circuit connected by the heat dissipation component, the PCB layout improvement and the switch element is selected, so that the circuit temperature rise and EMC are balanced at low cost; the circuit structure complexity is reduced, the control is convenient, and the reliability is high.
As a possible implementation, a MOS transistor is taken as an example of the switching element. The upper bridge circuit at least comprises a first MOS tube.
The grid electrode of the first MOS tube is connected with a first signal output pin of the driving chip through a first resistor and a first diode which are connected in parallel; the drain electrode of the first MOS tube is connected with the power supply voltage of the motor; the source electrode of the first MOS tube is connected with the drain electrode of a second MOS tube of the lower bridge circuit and the cathode of a first bootstrap capacitor corresponding to the first signal output pin, and the anode of the first bootstrap capacitor is connected with the working voltage of the driving chip; and a second resistor is connected between the grid electrode and the source electrode of the first MOS tube.
The first resistor and the first diode are connected in parallel, and the unidirectional conduction characteristic of the diode leads the conduction speed and the discharge speed of the first MOS tube to be different, so that the temperature rise speed of the first MOS tube is reduced. The source electrode of the MOS tube is connected with the cathode of the first bootstrap capacitor corresponding to the first signal output pin, and the upper bridge circuit takes the source electrode of the MOS tube as the reference ground (floating ground) of the output side of the driving chip, so that the driving chip outputs high and low levels to drive each MOS tube of the upper bridge circuit.
Optionally, the first diode is connected in series with the third resistor and then connected in parallel with the first resistor; the anode of the first diode is connected with the first MOS tube through a third resistor, and the cathode of the first diode is connected with a first signal output pin; the first resistance is greater than the third resistance; the second resistance is greater than the first resistance.
When the first signal output pin outputs a high level, the first diode is cut off, and the first resistor and the second resistor divide the voltage to enable the first MOS tube to be conducted; when the first signal output pin outputs a low level, the grid parasitic capacitance of the first MOS tube discharges, and the first MOS tube is closed after the voltage is low to a certain degree. Because the first resistor is larger than the third resistor, the discharge closing speed of the first MOS tube is higher relative to the conduction speed, the loss of the first MOS tube can be reduced, and the temperature rise is reduced.
The lower bridge circuit at least comprises a second MOS tube.
The grid electrode of the second MOS tube is connected with a second signal output pin of the driving chip through a fourth resistor and a second diode which are connected in parallel; the drain electrode of the second MOS tube is connected with the source electrode of the first MOS tube; the source electrode of the second MOS tube is grounded and is connected with the cathode of a second bootstrap capacitor corresponding to the second signal output pin, and the anode of the second bootstrap capacitor is connected with the working voltage of the driving chip; and a fifth resistor is connected between the grid electrode and the source electrode of the second MOS tube.
It should be noted that the number of the first MOS transistors of the upper bridge circuit is the same as that of the second MOS transistors of the lower bridge circuit, and the two MOS transistors connected to each other are alternately turned on, so as to control the operation of the motor.
As a possible implementation, the switching element is an IGBT tube. The upper bridge circuit includes a first IGBT.
The grid of the first IGBT is connected with a first signal output pin of the driving chip through a first resistor and a first diode which are connected in parallel; the collector of the first IGBT is connected with the power supply voltage of the motor; an emitter of the first IGBT is connected with a collector of the IGBT of the lower bridge circuit and a cathode of a first bootstrap capacitor corresponding to the first signal output pin, and a positive electrode of the first bootstrap capacitor is connected with a working voltage of the driving chip; and a second resistor is connected between the grid electrode and the emitter electrode of the first IGBT.
Optionally, the first diode is connected in series with the third resistor and then connected in parallel with the first resistor; the anode of the first diode is connected with the grid electrode of the first IGBT through a third resistor, and the cathode of the first diode is connected with a first signal output pin; the first resistance is greater than the third resistance; the second resistance is greater than the first resistance.
The lower bridge circuit includes a second IGBT.
The grid electrode of the second IGBT is connected with a second signal output pin of the driving chip through a fourth resistor and a second diode which are connected in parallel; the collector of the second IGBT is connected with the emitter of the first IGBT; an emitter of the second IGBT is grounded and is connected with a cathode of a second bootstrap capacitor corresponding to the second signal output pin, and a positive electrode of the second bootstrap capacitor is connected with the working voltage of the driving chip; and a fifth resistor is connected between the grid electrode and the emitter electrode of the second IGBT.
The following describes a related circuit structure of the driving chip. The driving chip adopts a chip suitable for motor control, comprises a plurality of control signal output ends, and can correspondingly and respectively output high and low level control signals according to a PWM signal input by the MCU.
Specifically, a first voltage pin and a second voltage pin corresponding to a first signal output pin of the driving chip are respectively connected with the anode and the cathode of the first bootstrap capacitor; the positive pole of the first bootstrap capacitor is connected with the negative pole of the third diode, the positive pole of the third diode is connected with the filter circuit, and the filter circuit is connected with the working voltage of the driving chip.
The filter circuit is used for providing a power supply for the driving chip and filtering interference clutter in the power supply. The third diode is used for preventing the first bootstrap capacitor from being reversely charged. The filter circuit can also be connected with a divider resistor to prevent the filter circuit from boosting too fast.
Fig. 1 and fig. 2 show a schematic structural diagram of a motor driving circuit according to the present invention, which is described by taking a switching element as an MOS transistor as an example, fig. 1 is a schematic structural diagram of a driving chip portion, and fig. 2 is a schematic structural diagram of a MOS transistor circuit portion.
As shown in the figure 1 and the figure 2, the circuit adopts a normal discrete type (namely, an MOS tube driving chip and an MOS tube replace an IPM) circuit, an MCU controls the driving chip through a PWM signal, and the driving chip controls the on-off of six MOS tubes (MOS-1, MOS-2, MOS-3, MOS-4, MOS-5 and MOS-6) of an upper bridge and a lower bridge through six pins of HINU, HINV, HINW, LINU, LINV and LINW so as to control the motor.
In fig. 1, an electrolytic capacitor E8 and a capacitor C31 provide power for the driving chip, and filter interference noise in the power. D9, D10 and D12 are high-voltage fast recovery diodes, so that the bootstrap capacitor is prevented from being charged reversely. C38, C42 and C57 are bootstrap capacitors and provide stable power supplies for three output pins of HINU, HINV and HINW, and R80 and R81 are selected to be proper values, so that the situation that the voltage in E8 rises too fast to affect HINU, HINV, HINW, LINU, LINV and LINW and further affect the on-off of MOS tubes is avoided.
The operating principle of the MOS transistor (taking MOS-3 as an example) is as follows:
as shown in fig. 2, when the HINU outputs high, D14 and R116 do not conduct because the D14 diode is turned off; at this time, R115 (small resistance) and R123 (large resistance) divide voltage, the voltage at two ends of R123 is almost equal to the output voltage value of HINU 15V, the voltage between the G point of the grid electrode of MOS-3 and the S point of the source electrode is also approximately 15V, and the MOS-3 tube is conducted.
When the HINU outputs low level, because MOS3 gate parasitic capacitance stores charge during the period that the HINU is high, the gate is relatively higher than the negative electrode (namely HIU) of D14, R116 and D14 are turned on, the gate parasitic capacitance discharges, and MOS-3 is turned off after the voltage is low to a certain degree. Because R116 is smaller than R115, the discharge closing speed is faster than the speed during conduction, so that the loss of MOS-3 can be reduced, and the temperature rise is reduced. In addition, the PCB of the MOS-3 is partially provided with copper in large areas at the top layer and the bottom layer and is windowed, so that the heat dissipation is increased, and the temperature rise of the MOS-3 is reduced.
In addition, a proper RC circuit is added between the D point of the MOS-3 drain and the S point of the source, so that the voltage jump of the MOS3/IGBT3 is reduced, and the EMC of the circuit is improved.
Since the voltage at the drain D point and the source S point is almost equal to each other when the MOS-1, MOS-2, and MOS-3 of the upper bridge are turned on, and the absolute voltage value is about 310V, which is a high voltage, and as described above, to turn on the MOS-3, the voltage at the gate G point needs to be higher than the source S point, so that the upper bridge uses the MOS transistor S as the reference ground (floating ground) on the output side of the driver chip, and the bootstrap capacitor is further added to connect the positive electrode of the capacitor with the power supply 15V of the driver chip as the power supply on the output side of the driver chip, when the driver chip outputs a high level, the absolute voltage at this time can reach about 325V higher than the voltage value of the source 310 by about 15V, so as to drive the on and off of the MOS transistor of the upper bridge.
The source S point of the MOS tube of the lower bridge is grounded through a tiny resistor, so that the voltage of the source S point is approximately 0V when the MOS tube of the lower bridge is conducted, the high level output by the driving chip is approximately 15V, the requirement of driving the MOS/IGBT tube of the lower bridge is met, and special treatment is not needed for the lower bridge.
When the MCU controls the upper MOS tube and the lower MOS tube to be alternately conducted through the PWM signal, the motor can operate.
Fig. 3 and 4 show schematic structural diagrams of a motor driving circuit according to the present invention, which take an example of a switching element as an IGTB, fig. 3 is a schematic structural diagram of a driving chip portion, and fig. 4 is a schematic structural diagram of an IGTB circuit portion.
Similar to the circuit structures shown in fig. 1 and 2, all the MOS transistors are replaced with IGBTs in fig. 3 and 4, specifically, the connection relationship of the IGBT collector coincides with the connection relationship of the MOS transistor drain, and the connection relationship of the IGBT emitter coincides with the connection relationship of the MOS transistor source. The circuit structure and the control principle in fig. 3 and 4 are similar to those described above with respect to the circuit structures in fig. 1 and 2, and are not described again here.
According to the motor driving circuit provided by the embodiment of the invention, the traditional IPM driving circuit is replaced by a mode of separating the MOS tube/IGBT and the driving chip, so that the cost is greatly reduced, the driving resistor matching and the selection of RC circuit parameters of the MOS tube/IGBT are utilized, the large-area copper laying is utilized, the heat dissipation and EMC are balanced, and the effect is obvious.
The embodiment of the invention also provides a motor, which comprises the MCU and the motor driving circuit, wherein the MCU is connected with a driving chip of the motor driving circuit and is used for sending the PWM signal to the driving chip.
Of course, those skilled in the art can understand that all or part of the processes in the methods according to the above embodiments may be implemented by instructing a control device to implement the methods according to the above embodiments by a computer, and the program may be stored in a computer-readable storage medium, and when executed, the program may include the processes according to the above method embodiments, where the storage medium may be a memory, a magnetic disk, an optical disk, or the like.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A discrete motor drive circuit is characterized by comprising a drive chip and a discrete drive circuit;
the driving chip is connected with the discrete driving circuit and used for sending a switch control signal to the discrete driving circuit;
the discrete driving circuit comprises an upper bridge circuit and a lower bridge circuit, the upper bridge circuit and the lower bridge circuit respectively comprise a plurality of discrete switch elements, and each switch element is connected with the driving chip; the switching element is an MOS tube or an IGBT;
the discrete driving circuit is provided with a heat dissipation part at the position of each switch element;
if the switching element is an MOS tube, an RC circuit is connected between the drain electrode and the source electrode of the MOS tube; and if the switching element is an IGBT, an RC circuit is connected between the collector and the emitter of the IGBT.
2. The motor drive circuit according to claim 1, wherein the upper bridge circuit includes at least a first MOS transistor;
the grid electrode of the first MOS tube is connected with a first signal output pin of the driving chip through a first resistor and a first diode which are connected in parallel;
the drain electrode of the first MOS tube is connected with the power supply voltage of the motor;
the source electrode of the first MOS tube is connected with the drain electrode of the second MOS tube of the lower bridge circuit and the cathode of a first bootstrap capacitor corresponding to the first signal output pin, and the anode of the first bootstrap capacitor is connected with the working voltage of the driving chip;
and a second resistor is connected between the grid electrode and the source electrode of the first MOS tube.
3. The motor drive circuit of claim 1 wherein said upper bridge circuit comprises at least a first IGBT;
the grid electrode of the first IGBT is connected with a first signal output pin of the driving chip through a first resistor and a first diode which are connected in parallel;
the collector of the first IGBT is connected with the power supply voltage of the motor;
an emitter of the first IGBT is connected with a collector of a second IGBT of the lower bridge circuit and a cathode of a first bootstrap capacitor corresponding to the first signal output pin, and an anode of the first bootstrap capacitor is connected with a working voltage of the driving chip;
and a second resistor is connected between the grid electrode and the emitter electrode of the first IGBT.
4. A motor drive circuit according to claim 2 or 3, wherein the first diode is connected in series with a third resistor and then connected in parallel with the first resistor; the anode of the first diode is connected with the gate of the first MOS tube or the first IGBT through the third resistor, and the cathode of the first diode is connected with the first signal output pin;
the first resistance is greater than the third resistance; the second resistance is greater than the first resistance.
5. The motor drive circuit according to claim 2, wherein the lower bridge circuit includes at least a second MOS transistor;
the grid electrode of the second MOS tube is connected with a second signal output pin of the driving chip through a fourth resistor and a second diode which are connected in parallel;
the drain electrode of the second MOS tube is connected with the source electrode of the first MOS tube;
the source electrode of the second MOS tube is grounded and is connected with the cathode of a second bootstrap capacitor corresponding to the second signal output pin, and the anode of the second bootstrap capacitor is connected with the working voltage of the driving chip;
and a fifth resistor is connected between the grid electrode and the source electrode of the second MOS tube.
6. The motor drive circuit of claim 3 wherein said underbridge circuit comprises at least a second IGBT;
the grid electrode of the second IGBT is connected with a second signal output pin of the driving chip through a fourth resistor and a second diode which are connected in parallel;
the collector of the second IGBT is connected with the emitter of the first IGBT;
an emitter of the second IGBT is grounded and is connected with a cathode of a second bootstrap capacitor corresponding to the second signal output pin, and an anode of the second bootstrap capacitor is connected with the working voltage of the driving chip;
and a fifth resistor is connected between the grid electrode and the emitter electrode of the second IGBT.
7. The motor drive circuit according to claim 5 or 6, wherein a first voltage pin and a second voltage pin corresponding to the first signal output pin are respectively connected to an anode and a cathode of the first bootstrap capacitor;
the positive electrode of the first bootstrap capacitor is connected with the negative electrode of a third diode, the positive electrode of the third diode is connected with a filter circuit, and the filter circuit is connected with the working voltage of the driving chip.
8. The motor drive circuit according to claim 1, wherein the heat dissipation member is provided by copper-clad, and the copper-clad rear window is formed.
9. The motor drive circuit according to claim 1 or 8, wherein a pitch between the plurality of discrete switching elements is greater than a preset heat dissipation pitch threshold.
10. A motor comprising an MCU and a motor drive circuit according to any one of claims 1 to 9;
and the MCU is connected with a driving chip of the motor driving circuit and is used for sending a PWM signal to the driving chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210197359.7A CN114665755A (en) | 2022-03-01 | 2022-03-01 | Discrete motor drive circuit and motor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210197359.7A CN114665755A (en) | 2022-03-01 | 2022-03-01 | Discrete motor drive circuit and motor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114665755A true CN114665755A (en) | 2022-06-24 |
Family
ID=82027109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210197359.7A Pending CN114665755A (en) | 2022-03-01 | 2022-03-01 | Discrete motor drive circuit and motor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114665755A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115149939A (en) * | 2022-09-01 | 2022-10-04 | 清华大学 | Discrete high-voltage electronic device and method |
| CN116633238A (en) * | 2023-07-26 | 2023-08-22 | 成都金洹科科技有限公司 | High-power electric vehicle controller based on aluminum substrate |
-
2022
- 2022-03-01 CN CN202210197359.7A patent/CN114665755A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115149939A (en) * | 2022-09-01 | 2022-10-04 | 清华大学 | Discrete high-voltage electronic device and method |
| CN115149939B (en) * | 2022-09-01 | 2023-01-06 | 清华大学 | Discrete high-voltage electronic device and method |
| CN116633238A (en) * | 2023-07-26 | 2023-08-22 | 成都金洹科科技有限公司 | High-power electric vehicle controller based on aluminum substrate |
| CN116633238B (en) * | 2023-07-26 | 2023-09-29 | 成都金洹科科技有限公司 | High-power electric vehicle controller based on aluminum substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114665755A (en) | Discrete motor drive circuit and motor | |
| US9356516B2 (en) | Driving apparatus and electric power converter | |
| WO2005025065A1 (en) | High frequency control of a semiconductor switch | |
| CN109344419B (en) | Transient sectional analysis model for IGBT and PIN diode commutation units | |
| US9595954B2 (en) | Method and circuit for recharging a bootstrap capacitor using a transfer capacitor | |
| CN114006347B (en) | Semiconductor high-voltage integrated driving chip and electronic equipment | |
| CN109768727B (en) | Power device and electric appliance | |
| JPH0947015A (en) | Drive circuit for self-extinguishing semiconductor element | |
| CN217904283U (en) | Discrete motor drive circuit and motor | |
| CN109889026B (en) | Power device and electric appliance | |
| US11888469B2 (en) | Power device and electrical appliance | |
| CN116780887B (en) | Intelligent power module with drive resistor selection function | |
| US7095639B2 (en) | Inverter circuit having switching device with gate driven by high-voltage integrated circuit | |
| CN109802554B (en) | Power device and electric appliance | |
| CN111413555A (en) | Evaluation method, estimation method, evaluation device, and comprehensive evaluation device | |
| CN210927589U (en) | Power tube grid drive circuit | |
| CN209267447U (en) | Electrically-controlled component and air conditioner | |
| CN114070019A (en) | Drive circuit, drive method and switching power supply | |
| CN101895241A (en) | Dual-power motor control system and motor control device thereof | |
| JP2002094363A (en) | Gate drive circuit for insulation gate type semiconductor element, the insulation gate type semiconductor element and power converter using them | |
| CN102324925B (en) | Level switching circuit for high-voltage integrated circuit | |
| US20230369990A1 (en) | Gate control circuitry for automotive variable voltage converter | |
| JP2020195019A (en) | Gate drive circuit | |
| JP6390909B2 (en) | Drive device, power conversion device | |
| CN218940940U (en) | Intelligent power circuit capable of preventing electrostatic breakdown |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |