CN114664775A - 一种复合键合丝及制备方法 - Google Patents
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- 229910052763 palladium Inorganic materials 0.000 description 15
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Abstract
本发明涉及一种复合键合丝及制备方法,所述复合键合丝,各组份的重量百分含量为:Pd含量为4%~18%,其余为Ag;其中,Pd以纤维状分布在Ag基体中。本发明所述复合键合丝的力学性能可以达到与金丝及银合金丝同一水平,同时具有优异的可靠性和良好的导电性,电阻率低于键合金丝,且在一定范围内可调,并且还有成本低的优点。
Description
技术领域
本发明涉及电子封装用的键合丝,具体为一种复合键合丝及其制备方法。
背景技术
键合丝是在各类电子元器件中实现芯片内电路与引线框架电连接的微细金属材料,是用于半导体分立器件和集成电路电子封装的关键基本材料之一。
目前最为广泛采用的键合丝为黄金类键合丝,特别是4N级(纯度>99.99%)的高纯金丝。近年来,由于黄金价格的日益上涨,给大使用量的中低端电子封装行业带来巨大的成本压力,业界内开发了各型号银合金键合丝来代替传统的键合金丝。通过在低成本的的银中加入Au、Pd、Cu、Pt等多种合金元素,可使银合金键合丝拥有与金丝同一水平的机械性能及键合可靠性。
然而,银合金类键合丝由于加入的合金元素种类繁多,熔炼多种中间合金工艺复杂且成本高,丝材性能一致性不易保证,且通过加入大量合金元素及多种微量元素后虽然合金丝的可靠性提升明显,但银的大幅合金化导致其晶格无序性增加,电子散射加重,电阻率显著增加。因此,现有技术生产的银合金键合丝,其电阻率往往较高,例如典型牌号Ag-8Au-3Pd键合丝的电阻率甚至达5μΩ·cm以上,在中低端场合无法很好的替代键合金丝(常用的4N金丝电阻率约2.3μΩ·cm),且无法满足近年来电子元器件日益小型化、高功率化的发展趋势对键合丝材料高导电性的要求。
发明内容
本发明提供了一种复合键合丝及制备方法,采用本发明所述方法制得的复合键合丝,解决了背景技术中所述的银基键合丝无法同时兼顾高可靠性及高导电性的问题。
本发明的技术方案是:
一种复合键合丝,该键合丝各组份的重量百分含量为:Pd含量为4%~18%,其余为Ag;其中,Pd以纤维状分布在Ag基体中。
上述的复合键合丝的制备方法,其特征在于,有以下步骤:
1)制备键合丝粉
按照上述配比取Ag粉和Pd粉,混匀,得混合粉末;
2)烧结、自由锻+旋锻、拉拔
步骤1)所得混合粉末烧结成坯料,经旋自由锻和旋锻,得到杆材;再经多模拉拔成丝材;
3)热处理
步骤3)所得丝材超声波清洗,<300℃下退火,得到复合键合丝。
步骤1)所述Ag粉≥400目,Ag含量为>99.999%。
步骤1)所述Pd粉中Pd含量为>99.99%。
步骤2)所述搅拌为研磨或球磨。
所述球磨是在氩气条件下300-400rpm球磨48h。
步骤2)所述烧结的方法:温度为850~920℃,压力≥30Mpa,真空度为10-4Pa。
步骤2)所述旋锻和轧制的方法是:将烧结后的坯料锻打为12mm×12mm的方条,随后以2.0-2.5m/min的牵引速度冷旋锻,得到φ3.5-3.0mm的杆材。
步骤2)所述多模拉拔为:粗拉,其道次变形量<20%;中拉,其道次变形量<15%;细拉,其道次变形量<10%,将杆材拉拔为丝材。
本发明通过键合丝微观结构与增强相Pd含量的优化设计,使键合丝兼具高可靠性及高导电性,若Pd含量<4%,则焊点可靠性不足,且球颈断裂几率高;若Pd含量>18%,则键合丝的电阻率>2.3μΩ·cm(2.3μΩ·cm为4N金丝的电阻率),难以实现对传统键合金丝的广泛替代,且成本较高。
本发明中的Pd元素以纤维状增强相而非合金元素的形式存在,提高丝材的化学稳定性、加工性能及力学性能的同时保持Ag的高导电性,且Pd可抑制键合界面元素扩散、减缓脆性金属间化合物生长,提高焊点的可靠性。
本发明所述方法基于粉末冶金的手段,将Ag金属粉末与Pd金属粉末复合成坯后,通过大变形加工消除坯材缺陷,随后在丝材拉拔过程中,Ag与Pd协同变形,最终被加工为纤维增强复合材料,其间避免了Ag与Pd形成Ag-Pd合金而导致的电阻率大幅升高,进而使丝材获得优异的导电性能。
本发明的有益效果为:
③具有良好的导电性,电阻率低于键合金丝,且在1.7~2.3μΩ·cm范围内可调;
④相比于键合金丝,材料成本降低60%以上。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,以下结合实施例及对比例对本发明的银钯复合键合丝及其制备方法作具体阐述。
实施例1:
S1:以机械混合法将480g的Ag粉(≥400目,纯度>99.999%)与20g的Pd粉(纯度>99.99%)通过球磨机以300-400rpm的速度混粉48h;
S2:将S1中得到的混合均匀的粉末以真空热压烧结设备制备为圆柱状的Ag/4%Pd复合坯料,其中,烧结温度为850~920℃,压力≥30Mpa,真空度控制在10-4Pa;
S6:将S5得到的银/钯复合键合丝烘干后进行复绕、分卷、包装。
实施例2:
S1:以机械混合法将445g的Ag粉(≥400目,纯度>99.999%)与55g的Pd粉(纯度>99.99%)通过球磨机以300-400rpm的速度混粉48h;
S2:将S1中得到的混合均匀的粉末以真空热压烧结设备制备为圆柱状的Ag/11%Pd复合坯料,其中,烧结温度为850~920℃,压力≥30Mpa,真空度控制在10-4Pa;
S6:将S5得到的银/钯复合键合丝烘干后进行复绕、分卷、包装。
实施例3:
S1:以机械混合法将410g的Ag粉(≥400目,纯度>99.999%)与90gPd粉(纯度>99.99%)通过球磨机以300-400rpm的速度混粉48h;
S2:将S1中得到的混合均匀的粉末以真空热压烧结设备制备为圆柱状的Ag/18%Pd复合坯料,其中,烧结温度为850~920℃,压力≥30Mpa,真空度控制在10-4Pa;
S6:将S5得到的银/钯复合键合丝烘干后进行复绕、分卷、包装。
对比例1
S1:按重量计,在5N银(纯度为99.99%)中加入4.0%的钯,经过定向连铸工艺,获得直径为8mm的Ag-4Pd合金杆材;
S4:将S3得到的Ag-4Pd合金丝烘干后进行复绕、分卷、包装。
表1为实施例1-3和对比例1的力学性能及电学性能比较。可见,采用本发明所述方法制造的银/钯复合键合丝,力学性能与银钯合金丝达到同一水平的同时,电阻率更低。
表1
实验项目 | 实施例1 | 实施例2 | 实施例3 | 对比例1 |
拉断力(CN) | 7.2 | 9.0 | 10.1 | 7.1 |
延伸率(%) | 6.6 | 6.3 | 6.1 | 6.2 |
电阻率(μΩ·cm) | 1.71 | 1.90 | 2.23 | 2.59 |
表2为实施例1-3和对比例1的键合可靠性比较,采用4种丝材键合2835LED芯片,并在进行塑封后进行高加速湿热压力测试(HAST),实验条件为110℃,85%RH,264h,每种丝材对应100PCS,试验结束后0/100死灯则为PASS。试验结束后抽取10PCS进行焊球推力测试,其结果见表2。
可见,采用本发明所述方法制造的银/钯复合键合丝,键合可靠性与银合金键合丝相当。
表2
实验项目 | 实施例1 | 实施例2 | 实施例3 | 对比例1 |
HAST | PASS | PASS | PASS | PASS |
平均焊球推力(g) | 45.3g | 57.2g | 62.5g | 46.3g |
Claims (9)
1.一种复合键合丝,其特征在于,该键合丝各组份的重量百分含量为:Pd含量为4%~18%,其余为Ag;其中,Pd以纤维状分布在Ag基体中。
2.权利要求1所述的复合键合丝的制备方法,其特征在于,有以下步骤:
1)制备键合丝粉
按照权利要求1所述配比取Ag粉和Pd粉,混匀,得混合粉末;
2)烧结、自由锻和旋锻、拉拔
步骤1)所得混合粉末烧结成坯料,经自由锻和旋锻,得到杆材;再经多模拉拔成丝材;
3)热处理
步骤3)所得丝材超声波清洗,<300℃下退火,得到复合键合丝。
3.根据权利要求2所述的方法,其特征在于:步骤1)所述Ag粉≥400目,Ag含量为>99.999%。
4.根据权利要求2所述的方法,其特征在于:步骤1)所述Pd粉中Pd含量为>99.99%。
5.根据权利要求2所述的方法,其特征在于:步骤2)所述搅拌为研磨或球磨。
6.根据权利要求5所述的方法,其特征在于:所述球磨是在氩气条件下300-400rpm球磨48h。
7.根据权利要求2所述的方法,其特征在于:步骤2)所述烧结的方法:温度为850~920℃,压力≥30Mpa,真空度为10-4Pa。
8.根据权利要求2所述的方法,其特征在于:步骤2)所述自由锻+旋锻的方法是:将烧结后的坯料锻打为12mm×12mm的方条,随后以2.0-2.5m/min的牵引速度冷旋锻,得到φ3.5-3.0mm的杆材。
9.根据权利要求2所述的方法,其特征在于:步骤2)所述多模拉拔为:粗拉,其道次变形量<20%;中拉,其道次变形量<15%;细拉,其道次变形量<10%,将杆材拉拔为丝材。
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