CN114664699A - Method for regenerating Belljar in ETCH equipment for semiconductor - Google Patents

Method for regenerating Belljar in ETCH equipment for semiconductor Download PDF

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Publication number
CN114664699A
CN114664699A CN202210206956.1A CN202210206956A CN114664699A CN 114664699 A CN114664699 A CN 114664699A CN 202210206956 A CN202210206956 A CN 202210206956A CN 114664699 A CN114664699 A CN 114664699A
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CN
China
Prior art keywords
belljar
component
time
drying
soaking
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210206956.1A
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Chinese (zh)
Inventor
杨炜
贺贤汉
蒋立峰
许俊
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Shanghai Fullerde Intelligent Technology Development Co ltd
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Shanghai Fullerde Intelligent Technology Development Co ltd
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Publication date
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Priority to CN202210206956.1A priority Critical patent/CN114664699A/en
Publication of CN114664699A publication Critical patent/CN114664699A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/08—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for polishing surfaces, e.g. smoothing a surface by making use of liquid-borne abrasives
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning In General (AREA)

Abstract

The invention discloses a method for regenerating belljar in ETCH equipment for semiconductors, which comprises the following steps: protecting a sealing surface of belljar to be regenerated by using a 3M adhesive tape, and removing a film by using a mixed solution of nitric acid and hydrofluoric acid; carrying out sand blasting treatment on the inner surface of belljar by using a wet sand blasting machine; polishing the inner surface of belljar by using a nylon brush; soaking with warm water; performing high-pressure water cleaning on the polished inner surface of belljar; and (3) conveying the component to a 100-grade dust-free chamber for ultrasonic cleaning, then flushing with ultrapure water, and finally drying with nitrogen. And (3) drying: and (4) putting the dried component into a dust-free oven for heating and drying. Some of these processes are repeated several times. By the regeneration method, the belljar can be repeatedly and stably utilized.

Description

Method for regenerating Belljar in ETCH equipment for semiconductor
Technical Field
The invention belongs to the field of semiconductor equipment part repairing and regenerating, and particularly relates to a method for regenerating Bell jar in ETCH equipment for a semiconductor.
Background
Semiconductor integrated circuit manufacturing technology continues to advance rapidly, and the process is accelerating toward miniaturization, high density and high integration. An ETCH (etching) process in a semiconductor manufacturing apparatus is an essential part of a chip manufacturing process, and a layer of polymer, organic adhesion and the like is gradually deposited on the surface of a dry etching machine during a production process, and these pollutants fall off during the operation process, or particles are formed in a cavity due to insufficient subsequent adhesion caused by the existence of the pollutants, so that the defects are caused, and therefore, the surface state and the cleanliness degree of a semiconductor part become very important.
Bell jar (Bell jar) processed by quartz has extremely low thermal expansion coefficient, high temperature resistance, excellent chemical stability, excellent electrical insulation, low and stable ultrasonic delay performance, optimal ultraviolet spectrum transmission performance, visible light transmission performance and near infrared spectrum transmission performance, and mechanical performance higher than that of common glass. Has high dielectric strength and extremely low conductivity, namely, the high dielectric strength and resistance can be still maintained under high temperature, high pressure and high frequency, and the applied frequency band has almost no dielectric loss, so that the quartz is an excellent high-temperature dielectric insulating material. As a device part used in a large scale in the semiconductor industry, a quartz part is high in purchase cost, and cannot be replaced frequently, so that the quartz part needs to be regenerated through cleaning and repeatedly put into use.
At the present stage, the membrane is removed by adopting a hydrofluoric/nitric acid soaking and dry spraying mode, and high-pressure water and ultrasonic waves are used for regeneration. The process can meet the basic requirements of 8-inch process or low-end process, but a most critical particle problem often occurs, the stability of the machine is directly influenced, the service cycle of the machine is greatly shortened, and the cost of PM (machine maintenance) is increased.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a method for regenerating bell jar in ETCH equipment for semiconductors, which comprises six regeneration procedures of mixed acid cleaning, wet sand blasting, nylon brush polishing, high-pressure water washing, ultrasonic cleaning and drying, wherein some procedures need to be repeated for many times. By the regeneration method, the bell jar can be repeatedly and stably utilized.
In order to achieve the purpose, the invention is implemented by the following technical scheme: a method for regenerating Beljar in ETCH equipment for semiconductors comprises the following steps:
step one, soaking in hydrofluoric/nitric acid for the first time;
protecting a sealing surface of a belljar component to be regenerated by using a 3M adhesive tape, placing the belljar component on a fixed platform with the inner surface upward and the outer surface downward, and pouring a mixed solution of 18% of hydrofluoric acid and 23% of nitric acid into the belljar component to soak for 20-30 minutes;
step two, wet sand blasting;
carrying out sand blasting operation on the belljar component by using a wet sand blasting machine and white corundum;
step three, polishing for the first time;
integrally polishing and brushing the inner surface of the belljar component by using a nylon brush, and preventing the plastic of a nylon brush body from touching the inner wall of the component;
step four, washing with high pressure water for the first time;
step five, soaking in hydrofluoric/nitric acid for the second time;
firstly, confirming that the adhesive tape on the sealing surface of the belljar component is still intact, and then putting the whole component into a mixed solution of 18% hydrofluoric acid and 23% nitric acid for soaking for 1-2 minutes;
step six, polishing for the second time;
integrally polishing and brushing the inner surface of the belljar component by using a nylon brush, and preventing the plastic of a nylon brush body from touching the inner wall of the component;
step seven, washing with water under high pressure for the second time;
step eight, soaking in warm water;
step nine, polishing for the third time;
integrally polishing and brushing the inner surface of the belljar component by using a nylon brush, and preventing the plastic of a nylon brush body from touching the inner wall of the component;
step ten, washing with high pressure water for the third time;
eleventh, drying for the first time;
step twelve, ultrasonic cleaning;
the belljar component is conveyed to a 100-grade dust-free chamber for ultrasonic cleaning, then is washed for 1min by adopting ultrapure water, and finally is dried by using nitrogen;
thirteen, drying for the second time;
and (3) putting the dried component into a dust-free oven for heating and drying, wherein the temperature of the oven is set to 140-.
Further, in the second step, the wet sand blasting pressure is set to be 2-3kg/cm2, the sand material is 60 meshes, the distance between the part and the sand blasting gun is 10-20cm, and the angle between the part and the sand blasting gun is 45-90 degrees. This step is to adjust surface abnormalities due to acid etching, and wet blasting can reduce impact force on quartz and reduce wear on parts.
And further, in the third step, the sixth step and the ninth step, the nylon brush is used for polishing and brushing the inner surface of the belljar component for 1-3 minutes.
Further, the high-pressure water washing in the fourth step, the seventh step and the tenth step is specifically as follows: and (3) flushing the interior of the Belljar component by using a high-pressure water gun for 1-2 minutes at the pressure of 100 psi.
Further, the soaking in water in the eight steps is as follows: soaking in 90 + -5 deg.C warm water for 50-70 min to remove residual acid on the surface of the component.
Further, the eleventh drying in step is specifically as follows: and drying the moisture on the surface of the part by using an air gun.
Further, the step twelve, the ultrasonic cleaning specifically comprises: and (3) conveying the belljar component to a 100-grade dust-free room for ultrasonic cleaning, wherein the ultrasonic frequency is 40-80 KHz, the ultrasonic cleaning time is 25-35min, then washing with ultra-pure water for 1-2min, and finally drying with nitrogen.
The invention has the following beneficial effects:
according to the method for regenerating bell jar in the ETCH equipment for the semiconductor, the deposited film is removed by a chemical and physical combination method.
1. And the component cost is reduced: the consumption of parts is reduced, the repeated use times are increased, and the purchasing cost of the parts is reduced;
2. the quality is stable: the excellent process ensures the cleanliness of the parts and solves the most important problem of particle abnormity;
3. the maintenance cost is reduced: PM times of a machine table are reduced, and a large amount of manpower and material resources are saved;
4. capacity is improved: the excellent quality ensures the normal operation of the machine table, and the productivity is greatly improved.
In addition, compared with the existing cleaning process, the new regeneration treatment mode has the following two advantages:
1. the rigorous cleaning process ensures the stable quality of the parts
2. The life time of the part on the machine can meet the standard use requirement, and the abnormal PM caused by the particle problem is solved.
Detailed Description
The following examples are given on the premise of the technical scheme of the present invention, and give detailed implementation modes and specific operation procedures, but the scope of the present invention is not limited to the following examples.
The raw materials and equipment used in the invention can be obtained from the market. The experimental procedures, in which specific conditions are not noted in the following examples, are generally carried out according to conventional conditions or according to conditions recommended by the manufacturers.
The examples are as follows:
the bell jar regeneration method for manufacturing the integrated circuit in the embodiment comprises the following steps:
1. first hydrofluoric/nitric acid soaking:
protecting a sealing surface of the belljar component to be regenerated by using a 3M adhesive tape, placing the belljar component on a fixed platform with the inner surface upward and the outer surface downward, and pouring a mixed solution of 18% of hydrofluoric acid and 23% of nitric acid into the belljar component to soak for 20-30 minutes.
2. Wet sand blasting:
the parts were sandblasted using a wet sandblaster and white corundum. The pressure is set to be 2-3kg/cm2, the sand type is 60 meshes, the distance between a part and the sand-blasting gun is 10-20cm, and the angle between the part and the sand-blasting gun is 45-90 degrees.
3. Grinding for the first time:
and (3) integrally polishing and brushing the inner surface of the bell jar for 2 minutes by using a nylon brush, and avoiding the plastic of the nylon brush body from touching the inner wall of the part.
4. First high-pressure water washing:
the interior of the part was flushed with a high pressure water gun for 1 minute at a pressure of 100 psi.
5. And (3) carrying out nitric-fluoric acid soaking for the second time:
firstly, the adhesive tape on the sealing surface of the belljar component is confirmed to be still intact, and then the whole component is put into a mixed solution of 18% hydrofluoric acid and 23% nitric acid and soaked for 1-2 minutes.
6. And (5) grinding for the second time:
and (3) integrally polishing and brushing the inner surface of the bell jar for 2 minutes by using a nylon brush, and avoiding the plastic of the nylon brush body from touching the inner wall of the part.
7. And (3) secondary high-pressure water washing:
the interior of the part was flushed with a high pressure water gun for 1 minute at a pressure of 100 psi.
8. Soaking in warm water
Soaking the parts in warm water at 90 +/-5 ℃ for 60 minutes to remove residual acid on the surfaces of the parts.
9. And (3) grinding for the third time:
integrally polishing and brushing the inner surface of the bell jar for 2 minutes by using a nylon brush, and preventing plastic of a nylon brush body from touching the inner wall of a part;
10. and (3) washing with high pressure water for the third time:
the interior of the part was flushed with a high pressure water gun for 1 minute at a pressure of 100 psi.
11. Primary drying:
and drying the moisture on the surface of the part by using an air gun.
12. Ultrasonic cleaning:
and (3) conveying the belljar component to a 100-grade dust-free chamber for ultrasonic cleaning, wherein the ultrasonic frequency is 40-80 KHz, the ultrasonic cleaning time is 30min, then flushing with ultrapure water for 1min, and finally drying with nitrogen.
13. And (3) secondary drying:
and (3) putting the dried part into a dust-free oven for heating and drying, setting the temperature of the oven to be 150 ℃, setting the constant temperature time to be 120min, and opening the oven below 40 ℃ after the program is finished for dust-free packaging.
And (3) checking the surface state comparison effect of bell jar before and after cleaning, and enabling the cleaned component to completely meet the use requirement of the component according to the detection of the roughness measuring instrument and the particle counter.
Although the present invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (7)

1. A method for regenerating Belljar in ETCH equipment for semiconductors is characterized by comprising the following steps: the method comprises the following specific steps:
step one, soaking in hydrofluoric nitrate for the first time;
protecting a sealing surface of a belljar component to be regenerated by using an adhesive tape, then placing the belljar component on a fixed platform with the inner surface upward and the outer surface downward, and then pouring a mixed solution of 18% of hydrofluoric acid and 23% of nitric acid into the belljar component to soak for 20-30 minutes;
step two, wet sand blasting;
carrying out sand blasting operation on the belljar component by using a wet sand blasting machine and white corundum;
step three, grinding for the first time;
integrally polishing and brushing the inner surface of the belljar component by using a nylon brush, and preventing the plastic of a nylon brush body from touching the inner wall of the component;
step four, washing with high pressure water for the first time;
step five, soaking in hydrofluoric acid nitrate for the second time;
firstly, confirming that the adhesive tape on the sealing surface of the belljar component is still intact, and then putting the whole component into a mixed solution of 18% hydrofluoric acid and 23% nitric acid for soaking for 1-2 minutes;
step six, polishing for the second time;
integrally polishing and brushing the inner surface of the belljar component by using a nylon brush, and preventing the plastic of a nylon brush body from touching the inner wall of the component;
step seven, washing with water under high pressure for the second time;
step eight, soaking in warm water;
step nine, polishing for the third time;
integrally polishing and brushing the inner surface of the belljar component by using a nylon brush, and preventing the plastic of a nylon brush body from touching the inner wall of the component;
step ten, washing with water under high pressure for the third time;
eleventh, drying for the first time;
step twelve, ultrasonic cleaning;
the belljar component is conveyed to a 100-grade dust-free chamber for ultrasonic cleaning, then is washed for 1min by adopting ultrapure water, and finally is dried by using nitrogen;
thirteen, drying for the second time;
and (3) putting the dried component into a dust-free oven for heating and drying, wherein the temperature of the oven is set to 140-.
2. The method for recycling Belljar in an ETCH device for semiconductors according to claim 1, wherein: in the second step, the wet sand blasting pressure is set to be 2-3kg/cm2, the sand material is 60 meshes, the distance between the part and the sand blasting gun is 10-20cm, and the angle between the part and the sand blasting gun is 45-90 degrees.
3. The method for recycling Belljar in an ETCH device for semiconductors according to claim 1, wherein: and step three, step six and step nine, polishing and brushing the inner surface of the belljar part for 1-3 minutes by using a nylon brush.
4. The method for recycling Belljar in an ETCH device for semiconductors according to claim 1, wherein: the fourth step, the seventh step and the tenth step are specifically as follows: and (3) flushing the interior of the Belljar component by using a high-pressure water gun for 1-2 minutes at the pressure of 100 psi.
5. The method for recycling Belljar in an ETCH device for semiconductors according to claim 1, wherein: soaking in warm water in the step eight specifically as follows: soaking in 90 + -5 deg.C warm water for 50-70 min to remove residual acid on the surface of the component.
6. The method for recycling Belljar in an ETCH device for semiconductors according to claim 1, wherein: the first drying in the eleventh step is concretely as follows: and drying the moisture on the surface of the part by using an air gun.
7. The method for recycling Belljar in an ETCH device for semiconductors according to claim 1, wherein: step twelve, ultrasonic cleaning is as follows: and (3) conveying the belljar component to a 100-grade dust-free room for ultrasonic cleaning, wherein the ultrasonic frequency is 40-80 KHz, the ultrasonic cleaning time is 25-35min, then washing with ultra-pure water for 1-2min, and finally drying with nitrogen.
CN202210206956.1A 2022-03-03 2022-03-03 Method for regenerating Belljar in ETCH equipment for semiconductor Pending CN114664699A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210206956.1A CN114664699A (en) 2022-03-03 2022-03-03 Method for regenerating Belljar in ETCH equipment for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210206956.1A CN114664699A (en) 2022-03-03 2022-03-03 Method for regenerating Belljar in ETCH equipment for semiconductor

Publications (1)

Publication Number Publication Date
CN114664699A true CN114664699A (en) 2022-06-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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