CN114664681B - LED chip in-situ monitoring equipment and method - Google Patents
LED chip in-situ monitoring equipment and method Download PDFInfo
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- 238000011065 in-situ storage Methods 0.000 title claims abstract description 57
- 238000012544 monitoring process Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000001228 spectrum Methods 0.000 claims abstract description 32
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- 239000002184 metal Substances 0.000 claims abstract description 28
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- 238000005259 measurement Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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Abstract
The invention discloses an LED chip in-situ monitoring device and method, which comprises the following steps: the bottom of the vacuum cavity is provided with a light hole; the atomic/molecular beam source is arranged on the top of the vacuum cavity; the transparent insulating sample stage is arranged in the vacuum cavity and loaded with an anode substrate for preparing an LED chip, wherein the anode substrate, the atom/molecule beam source and the light hole are positioned on the same central axis; the voltage component is used for applying in-situ voltage to the LED chip on the transparent insulating sample stage and comprises a vacuum electrode and a vacuum manipulator, wherein the anode of the vacuum electrode is connected with the anode substrate, the cathode of the vacuum electrode is connected with one end of the vacuum manipulator, which extends into the vacuum cavity and can be connected with the metal layer of the prepared LED chip; and the monitoring assembly is arranged in the light transmission direction of the light transmission hole and is used for acquiring the spectral test data and in-situ visual morphology information of the LED chip on the transparent insulating sample stage. The invention can continuously deposit luminescent layer materials and metal materials, and can carry out spectrum test and visual appearance information monitoring in situ.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to LED chip in-situ monitoring equipment and a method.
Background
A light emitting diode, abbreviated as LED, is a semiconductor light emitting device, which emits light by energy released by recombination of electrons and holes, can efficiently convert electric energy into light energy, and has wide applications in modern society, such as semiconductor lighting, flat panel display, and the like.
China is the largest manufacturing country of LED lighting products, and with the rapid increase of the penetration rate of the domestic LED lighting market to more than seven generations, the LED lighting has basically become the first requirement of lighting application, and the scale of the domestic LED lighting market shows a tendency of faster increase than the global average level. The LED display is a novel information display technology which is rapidly developed in the late eighties, rapidly grows into a mainstream product of flat panel display in the short and short decades, and is widely applied to the field of information display.
The LED chip structure is vertical, like a sandwich structure, the thin film deposition is an important link in the chip manufacturing process, and the existing process needs to firstly deposit a luminous layer in one device and then take the device to another device to deposit a metal layer. And the testing link needs to be carried out in different testing equipment, such as spectrum testing, appearance testing and the like. Both sample preparation and testing require transfer between different devices for ex situ testing. This will cause the following problems:
1. sample preparation and test are carried out by transferring among different devices, the process is complicated, and the production and research and development periods are long;
2. the test among different devices causes that the measurement positions of the micro-areas can not completely correspond, and the misjudgment is easy to generate;
3. the sample is transferred from the vacuum cavity to the atmosphere and is easily polluted by external impurities;
4. time and labor are consumed, and the enterprise cost is high;
the existing in-situ test equipment can only realize the monitoring of the structure of a horizontal type device, such as 0FET (organic field effect transistor) and cannot monitor a vertical type structure, such as an LED chip; the optical information can not be monitored in situ, and the transfer detection can bring the problems; and the existing in-situ detection equipment is only suitable for organic semiconductors, cannot be suitable for inorganic semiconductors, has limited applicability and cannot meet the development requirements of LED chips.
Disclosure of Invention
The invention aims to provide LED chip in-situ monitoring equipment and method, which can continuously deposit luminescent layer materials and metal materials and can perform spectrum test and visual appearance information monitoring in situ.
In order to solve the above technical problem, the present invention provides an in-situ monitoring device for an LED chip, comprising:
the vacuum cavity is used for preparing the LED chip and monitoring a vacuum environment in situ, and the bottom of the vacuum cavity is provided with a light hole;
the atomic/molecular beam source is arranged at the top of the vacuum cavity and used for providing and processing raw materials for preparing the LED chip;
the transparent insulating sample stage is arranged in the vacuum cavity and loaded with an anode substrate for preparing an LED chip, wherein the anode substrate, the atom/molecule beam source and the light hole are positioned on the same central axis;
the voltage component is used for applying in-situ voltage to the LED chip on the transparent insulating sample table and comprises a vacuum electrode and a vacuum manipulator which are arranged on the vacuum cavity, wherein the anode of the vacuum electrode is connected with the anode substrate, the cathode of the vacuum electrode is connected with one end of the vacuum manipulator, which extends into the vacuum cavity, and the end can be connected with the metal layer of the prepared LED chip;
and the monitoring assembly is arranged in the light transmission direction of the light transmission hole and is used for acquiring the spectral test data and in-situ visual morphology information of the LED chip on the transparent insulating sample stage.
As a further development of the invention, the atomic/molecular beam source comprises:
the non-metal atom/molecule beam source provides the original luminescent material to be deposited in the vacuum cavity and is used for preparing a luminescent layer on the anode substrate;
and the metal atomic beam source is used for providing a metal raw material to be deposited into the vacuum cavity and preparing a metal layer on the light-emitting layer.
As a further improvement of the present invention, the atomic/molecular beam source is vertically disposed on top of the vacuum chamber, and the atomic/molecular beam source comprises a heat shield assembly, a first vacuum flange for supporting the heat shield assembly, a container for holding the evaporated raw material, and a heating assembly fixed in the heat shield assembly for internally placing the container; the container can be dismantled and inlay and locate the one end that the vacuum flange was kept away from to the heat shield subassembly, the container have the inner chamber and its one end of keeping away from the vacuum flange be equipped with the opening that is linked together with the inner chamber, the opening part be equipped with the perisporium that stretches into the inner chamber, the perisporium stretches into the tip of inner chamber and opens and its area is less than rather than the inner chamber area that is in the coplanar, the heat shield subassembly is provided with the one end of container stretches into inside and being provided with electric baffle of vacuum cavity.
As a further improvement of the present invention, the transparent insulating sample stage is disposed below the atomic/molecular beam source, and two sides of the transparent insulating sample stage are in supporting connection with the inner wall of the vacuum cavity, the number of the atomic/molecular beam sources is 2, and 2 atomic/molecular beam sources vertically correspond to the anode substrate on the transparent insulating sample stage.
As a further development of the invention, the vacuum electrode is connected to an external voltage source, which provides an applied in-situ voltage.
As a further improvement of the invention, the anode of the vacuum electrode is connected with the anode substrate through an anode lead, and the anode lead is fixed on the transparent insulating sample table; and the cathode of the vacuum electrode is connected with the end part of the vacuum manipulator through a cathode lead.
As a further improvement of the present invention, the vacuum manipulator includes a handle, a vacuum bellows, a second vacuum flange and a telescopic arm, the vacuum bellows is disposed on the vacuum chamber through the second vacuum flange, the telescopic arm is disposed inside the vacuum chamber, the handle penetrates through the vacuum bellows and is connected to the telescopic arm, an insulating panel is disposed on an end surface of the telescopic arm, a cathode of the vacuum electrode is connected to the insulating panel, and the insulating panel can be adhered to a metal layer of an LED chip prepared on a transparent insulating sample stage.
As a further improvement of the invention, the monitoring component comprises a spectrum testing component and a morphology monitoring component;
the spectrum testing assembly comprises a light source, a spectrum detector and a spectrometer, wherein the light source and the spectrum detector are arranged in the light transmission direction of the light transmission hole and are used for acquiring a spectrum signal of the LED chip, and the spectrometer is connected with the light source and the spectrum detector;
the appearance monitoring assembly comprises a CCD camera, and the CCD camera is arranged in the light transmission direction of the light transmission hole and is used for acquiring appearance signals of the LED chip;
the spectrometer and the CCD camera are both connected with a computer, and the computer is used for analyzing the spectrum information and the morphology information of the LED chip.
As a further improvement of the invention, the monitoring assembly further comprises a film thickness meter, and the film thickness meter is used for monitoring the thickness of each growth layer in the preparation process of the LED chip.
An LED chip in-situ monitoring method adopts the LED chip in-situ monitoring equipment to detect the chip.
The invention has the beneficial effects that: the invention discloses a thin film deposition device with an in-situ monitoring function, which aims at industrial pain points of an LED chip ex-situ process and combines a vertical structure of the LED chip, and comprises the following components: the luminescent layer material and the metal material can be continuously deposited by an atomic/molecular beam source, the voltage is applied in situ by matching with a voltage component, the spectrum test is carried out, and the morphological information can be visually monitored in situ; the invention fills the domestic blank, solves the industrial pain points of complicated LED chip process, no correspondence of measurement positions, high time consumption, labor consumption and cost and the like, becomes a powerful tool in semiconductor photoelectric property research, and provides powerful technical support for the development of semiconductor photoelectric industry.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic diagram of an LED chip fabricated according to the present invention;
FIG. 3 is a schematic view of the external structure of the atomic/molecular beam source of the present invention;
FIG. 4 is a schematic cross-sectional view of the interior of an atomic/molecular beam source heat shield assembly of the present invention;
FIG. 5 is a schematic view of the vacuum robot of the present invention;
the reference numbers in the figures illustrate: 1. a vacuum chamber; 11. a light-transmitting hole; 12. an observation window; 2. an atomic/molecular beam source; 21. an atomic/molecular beam source controller; 22. a heat shield assembly; 23. a first vacuum flange; 24. an electric baffle; 25. a container; 251. an inner cavity; 252. an opening; 253. a peripheral wall; 221. a heating assembly; 3. a transparent insulating sample stage; 4. an LED chip; 41. an anode substrate; 42. a light emitting layer; 43. a metal layer; 5. a vacuum manipulator; 51. a handle; 52. a vacuum bellows; 521. a second vacuum flange; 53. a telescopic arm; 54. an insulating panel; 6; a vacuum electrode; 61; an external voltage source; 7. a stage body; 8. a spectrometer; 81. a spectral detector; 82. a laser light source; 83. an LED light source; 9. a computer; 10. film thickness meter.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
As shown in fig. 1 and 2, the present invention provides an in-situ monitoring apparatus for an LED chip, comprising:
the vacuum cavity 1 is used for preparing the LED chip 4 and monitoring a vacuum environment in situ, and the bottom of the vacuum cavity is provided with a light hole 11;
the atomic/molecular beam source 2 is arranged at the top of the vacuum cavity 1 and used for providing and processing raw materials prepared by the LED chip 4;
the transparent insulation sample table 3 is arranged in the vacuum cavity 1 and loaded with an anode substrate 41 for preparing an LED chip 4, wherein the anode substrate 41, the atom/molecule beam source 2 and the light hole 11 are positioned on the same central axis;
the voltage component is used for applying in-situ voltage to the LED chip 4 on the transparent insulating sample table 3 and comprises a vacuum electrode 6 and a vacuum manipulator 5 which are arranged on the vacuum cavity 1, wherein the anode of the vacuum electrode 6 is connected with an anode substrate 41, the cathode of the vacuum electrode 6 is connected with one end of the vacuum manipulator 5, which extends into the vacuum cavity 1, and the end can be connected with a metal layer 43 of the prepared LED chip 4;
and the monitoring assembly is arranged in the light transmission direction of the light transmission hole 11 and is used for acquiring the spectral test data and the in-situ visual morphology information of the LED chip 4 on the transparent insulating sample table 3.
In the using process of the invention, in a vacuum cavity 1, an atom/molecule beam source 2 is used for carrying out film deposition on an anode substrate 41 to prepare an LED chip 4, and in-situ voltage is applied to the prepared LED chip 4: the cathode of the vacuum electrode 6 is driven by the vacuum manipulator 5 to contact the upper metal layer 43 of the LED chip 4, the anode is directly connected with the anode substrate 41, external voltage is applied to the LED chip 4 through the vacuum electrode 6 at the moment to emit light, the light is diffracted downwards to the monitoring assembly through the light transmitting hole 11 after being emitted, the monitoring assembly carries out spectrum testing on the light emitted by the LED chip 4 and can obtain visual appearance information, and in-situ preparation and monitoring are integrated. Compared with the prior art, the method can continuously deposit the luminescent layer material and the metal material, can apply voltage in situ, carry out spectrum test in situ, and visually monitor the appearance information in situ, thereby solving various pain points such as fussy process, incapability of corresponding measurement positions, time consumption, labor consumption, high cost and the like.
Example one
As shown in fig. 1 and fig. 2, an embodiment of the present invention provides an in-situ monitoring apparatus for an LED chip, and based on the foregoing specific implementation, the atomic/molecular beam source 2 of the embodiment includes:
a non-metal atom/molecule beam source for providing a luminescent raw material to be deposited into the vacuum cavity 1 for preparing a luminescent layer 42 on the anode substrate 41;
and the metal atomic beam source provides metal raw materials to be deposited into the vacuum cavity 1 and is used for preparing the metal layer 43 on the light-emitting layer 42.
In this embodiment, since the LED chip 4 is prepared by first depositing the light-emitting layer 42 on the anode substrate 41 and then depositing the metal layer 43 on the light-emitting layer 42, at least two atomic/molecular beam sources 2 are required, i.e. one of the atomic/molecular beam sources is used for depositing the light-emitting layer 42 and the other atomic/molecular beam source 2 is used for depositing the metal layer 43.
Specifically, as shown in fig. 3 and 4, the atomic/molecular beam source 2 is vertically disposed on the top of the vacuum chamber 1, and the atomic/molecular beam source 2 includes a heat shield assembly 22, a first vacuum flange 23 for supporting the heat shield assembly 22, a container 25 for holding the evaporated raw material, and a heating assembly 221 fixed in the heat shield assembly 22 for installing the container 25 therein; the container 25 is detachably embedded in one end of the heat shield assembly 22 far away from the first vacuum flange 23, the container 25 has an inner cavity 251, an opening 252 communicated with the inner cavity 251 is formed in one end of the container 25 far away from the first vacuum flange 23, a peripheral wall 253 extending into the inner cavity 251 is arranged at the opening 252, the end of the peripheral wall 253 extending into the inner cavity 251 is open, the area of the end is smaller than that of the inner cavity 251 in the same plane, and when the vacuum atomic/molecular beam source is in an inverted state, the accommodating space can store the evaporation material and prevent the evaporation material from falling from the opening 252. During heating, the evaporation material in the container is heated to be vaporized, and atoms, molecules or clusters are generated, and the atoms, molecules or clusters are ejected from the opening 252 to form a beam, so that a thin film is formed on the opposite anode substrate 41; one end of the heat shield assembly 22, which is provided with the container 25, extends into the vacuum chamber 1 and is provided with an electric baffle 24, and the electric baffle 24 is connected with an atomic/molecular beam source controller 21 for controlling which atomic/molecular beam source 2 is turned on, so as to deposit different layers.
Example two
As shown in fig. 1 and fig. 2, an embodiment of the present invention provides an in-situ monitoring device for an LED chip, based on the foregoing specific embodiment, a spectrum test is performed by applying a voltage to a prepared LED chip 4 in situ, and to achieve the foregoing purpose, a vacuum electrode 6 of this embodiment is disposed on an inner wall of a vacuum chamber 1, and the vacuum electrode 6 is connected to an external voltage source 61 for applying an in-situ voltage.
Specifically, the transparent insulating sample stage 3 is arranged under the atom/molecule beam source 2, and two sides of the transparent insulating sample stage are in supporting connection with the inner wall of the vacuum cavity 1, so that the transparent insulating sample stage 3 is in a stable state. The anode of the vacuum electrode 6 is connected with the bottom of the anode substrate 41 through an anode lead, and the anode lead is fixed on the transparent insulating sample table 3; the cathode of the vacuum electrode 6 is connected to the end of the vacuum robot 5 by a cathode wire, and the wire may be bonded by a conductive adhesive or may be fixedly connected to the end of the vacuum robot by a means not limited to this, so that a voltage may be applied between the metal layer 43 of the LED chip 4 and the anode substrate 41. When voltage is applied, the end face of the vacuum manipulator 5 connected with the cathode moves to the surface of the metal layer 43, and the external voltage source 61 is started, so that the LED chip 4 emits light, and spectrum testing is performed through the lower light hole 11.
Further, as shown in fig. 5, the vacuum robot 5 includes a handle 51, a vacuum bellows 52, a second vacuum flange 521 and a telescopic arm 53, the vacuum bellows 52 is disposed on the vacuum chamber 1 through the second vacuum flange 521, the telescopic arm 53 is disposed inside the vacuum chamber 1, the handle 51 is connected to the telescopic arm 53 through the vacuum bellows 52, an insulating panel 54 is disposed on an end surface of the telescopic arm 53, a cathode of the vacuum electrode 6 is connected to the insulating panel 54, the insulating panel 54 is capable of being bonded to the metal layer 43 connected to the LED chip 4 on the transparent insulating sample stage 3, and the insulating panel 54 is capable of making the cathode contact with the metal layer 43 better. In this embodiment, the structure of the handle 51 and the telescopic arm 53 is not limited, and may be selected according to actual requirements, the handle 51 represents one end of the manipulator which can be operated and controlled externally, the telescopic arm 53 represents one end of the manipulator which moves in the vacuum chamber 1, and the manipulator may have a rotating wall, a rotating mechanism, a telescopic mechanism, etc., as long as a cathode wire is connected to a panel at one end of the handle and can be pressed against the metal layer 43. Regarding the control of the vacuum robot 5, the internal operation control process thereof can be observed through the observation window 12 provided on the vacuum chamber 1.
Further, the monitoring component comprises a spectrum testing component, the spectrum testing component comprises a light source, a spectrum detector 81 and a spectrometer 8, the light source and the spectrum detector 81 are arranged below the light hole 11 and can acquire spectrum signals of the LED chip, the spectrometer 8 is connected with the light source and the spectrum detector 81, the spectrometer 8 is connected with a computer 9, after in-situ voltage is applied to the LED chip 4 in the mode of the embodiment, light penetrates through the light hole 11, the light source and the spectrum detector 81 are matched with the spectrometer 8 to be used for acquiring optical information, the light is transmitted to the spectrometer 8 and then analyzed through the computer 9, and the light source comprises a laser light source 82 and an LED light source 83.
Further, the monitoring assembly further comprises a morphology monitoring assembly, the morphology monitoring assembly comprises a CCD camera, the CCD camera is used for acquiring morphology signals of the LED chip 4, and morphology change information of the LED chip 4 in the preparation process or after preparation is directly shot by the CCD camera and then is transmitted to the computer 9 for display.
Furthermore, the monitoring assembly further comprises a film thickness gauge 10, the film thickness gauge 10 is used for monitoring the thickness of each growth layer in the preparation process of the LED chip 4, the device comprises a crystal oscillator plate which is inserted into the vacuum cavity 1, and the growth thickness of the interlayer of the LED chip 4 can be obtained in real time, so that the preparation time of the atomic/molecular beam source 2 is controlled more accurately, and the quality of the LED chip 4 is improved.
EXAMPLE III
As shown in fig. 1 and fig. 2, an embodiment of the present invention provides an in-situ monitoring method for an LED chip, which performs chip detection by using the in-situ monitoring apparatus for an LED chip according to the above embodiment, and specifically includes the following steps:
firstly, adding raw materials into an atom/molecule beam source 2 (respectively adding raw materials to be deposited into a non-metal atom/molecule beam source and a metal atom/molecule beam source);
secondly, loading an anode substrate 41 on the surface of the transparent insulating sample table 3;
thirdly, the anode lead and the anode substrate 41 are adhered together by conductive adhesive, and good contact is kept by an insulating adhesive tape;
fourthly, the cathode lead and the insulating panel 54 at the end part of the vacuum manipulator 5 are adhered together by conductive adhesive, and a plurality of conductive adhesives are coated at the proper adhering position for standby;
fifthly, vacuumizing the vacuum cavity 1 (sequentially opening a mechanical pump, a molecular pump and an ion pump) to obtain a high vacuum environment;
sixthly, opening the spectrum testing assembly and the appearance monitoring assembly, and opening the film thickness meter 10;
seventhly, starting the atomic/molecular beam source 2 to perform evaporation deposition of the luminescent layer material, wherein the film thickness meter 10 can display the thickness of the film;
eighthly, starting another atom/molecule beam source 2 to carry out evaporation deposition of the metal layer 43 (cathode) material, displaying the thickness of the film by a film thickness instrument 10, and preparing and finishing the LED chip 4;
ninthly, adhering the insulating panel 54 at the end of the vacuum robot 5 to the metal layer 43 (cathode);
and tenthly, applying a voltage in situ through the external voltage source 61, and allowing the light emitted by the LED chip 4 to downwards enter the spectrum testing assembly through the light hole 11, wherein the spectrum signal can be monitored in situ.
The shape information of the LED chip 4 can be monitored in real time through the shape monitoring component in the preparation process and the voltage application process of the chip.
The method realizes the in-situ monitoring of the LED chip preparation through in-situ monitoring equipment, not only avoids the transfer in the preparation process, but also avoids the transfer among preparation, test and testing, simplifies the preparation process, shortens the production and research and development period, reduces the pollution of external impurities, improves the product quality and is beneficial to the development of the LED chip.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. An LED chip in-situ monitoring device, comprising:
the vacuum cavity is used for providing LED chip preparation and in-situ monitoring vacuum environment, and the bottom of the vacuum cavity is provided with a light hole;
the atomic/molecular beam source is arranged at the top of the vacuum cavity and used for providing and processing raw materials for preparing the LED chip;
the transparent insulating sample stage is arranged in the vacuum cavity and loaded with an anode substrate for preparing an LED chip, wherein the anode substrate, the atom/molecule beam source and the light hole are positioned on the same central axis;
the voltage component is used for applying in-situ voltage to the LED chip on the transparent insulating sample table and comprises a vacuum electrode and a vacuum manipulator which are arranged on the vacuum cavity, wherein the anode of the vacuum electrode is connected with the anode substrate, the cathode of the vacuum electrode is connected with one end of the vacuum manipulator, which extends into the vacuum cavity, and the end can be connected with the metal layer of the prepared LED chip;
and the monitoring assembly is arranged in the light transmission direction of the light transmission hole and is used for acquiring the spectral test data and in-situ visual morphology information of the LED chip on the transparent insulating sample stage.
2. The LED chip in-situ monitoring device according to claim 1, wherein the atomic/molecular beam source comprises:
the non-metal atom/molecule beam source provides the original luminescent material to be deposited in the vacuum cavity and is used for preparing a luminescent layer on the anode substrate;
and the metal atomic beam source is used for providing a metal raw material to be deposited into the vacuum cavity and preparing a metal layer on the light-emitting layer.
3. The LED chip in-situ monitoring device according to claim 1, wherein the atomic/molecular beam source is vertically disposed on top of the vacuum chamber, the atomic/molecular beam source comprises a heat shield assembly, a first vacuum flange for supporting the heat shield assembly, a container for holding the evaporated raw material, a heating assembly fixed in the heat shield assembly for placing the container therein; the container can be dismantled and inlay and locate the one end that the vacuum flange was kept away from to the heat shield subassembly, the container have the inner chamber and its one end of keeping away from the vacuum flange be equipped with the opening that is linked together with the inner chamber, the opening part be equipped with the perisporium that stretches into the inner chamber, the perisporium stretches into the tip of inner chamber and opens and its area is less than rather than the inner chamber area that is in the coplanar, the heat shield subassembly is provided with the one end of container stretches into inside and being provided with electric baffle of vacuum cavity.
4. The in-situ monitoring device for the LED chip according to claim 1, wherein the transparent insulating sample stage is disposed under the atomic/molecular beam source, and two sides of the transparent insulating sample stage are connected to the inner wall of the vacuum chamber in a supporting manner, the number of the atomic/molecular beam sources is 2, and 2 atomic/molecular beam sources vertically correspond to the anode substrate on the transparent insulating sample stage.
5. The LED chip in-situ monitoring device according to claim 1, wherein the vacuum electrode is connected to an external voltage source, the external voltage source providing an applied in-situ voltage.
6. The LED chip in-situ monitoring equipment according to claim 5, wherein an anode of the vacuum electrode is connected with the anode substrate through an anode lead, and the anode lead is fixed on the transparent insulating sample table; and the cathode of the vacuum electrode is connected with the end part of the vacuum manipulator through a cathode lead.
7. The LED chip in-situ monitoring device according to claim 1, wherein the vacuum manipulator comprises a handle, a vacuum bellows, a second vacuum flange and a telescopic arm, the vacuum bellows is arranged on the vacuum chamber through the second vacuum flange, the telescopic arm is arranged inside the vacuum chamber, the handle penetrates through the vacuum bellows to be connected with the telescopic arm, an insulating panel is arranged on an end face of the telescopic arm, a cathode of the vacuum electrode is connected with the insulating panel, and the insulating panel can be adhered to a metal layer of an LED chip prepared on the transparent insulating sample stage.
8. The in-situ monitoring device for the LED chip as claimed in claim 1, wherein the monitoring component comprises a spectrum testing component and a morphology monitoring component;
the spectrum testing assembly comprises a light source, a spectrum detector and a spectrometer, wherein the light source and the spectrum detector are arranged in the light transmission direction of the light transmission hole and are used for acquiring a spectrum signal of the LED chip, and the spectrometer is connected with the light source and the spectrum detector;
the appearance monitoring assembly comprises a CCD camera, and the CCD camera is arranged in the light transmission direction of the light transmission hole and is used for acquiring an appearance signal of the LED chip;
the spectrometer and the CCD camera are both connected with a computer, and the computer is used for analyzing the spectrum information and the morphology information of the LED chip.
9. The in-situ monitoring device for the LED chip as claimed in claim 1, wherein the monitoring assembly further comprises a film thickness gauge for monitoring the thickness of each growth layer during the preparation process of the LED chip.
10. An LED chip in-situ monitoring method, characterized in that the LED chip in-situ monitoring device as claimed in any one of claims 1 to 9 is used for chip detection.
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| TW201341566A (en) * | 2012-04-03 | 2013-10-16 | Nat Applied Res Laboratories | In situ monitoring extreme smooth thin film manufacturing process system and method thereof |
| CN103805956A (en) * | 2014-02-27 | 2014-05-21 | 苏州大学 | In-situ morphology and optical performance monitoring evaporation source and vacuum deposition equipment |
| CN106841369A (en) * | 2017-03-03 | 2017-06-13 | 河南理工大学 | A kind of Field Electron Emission test device |
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