CN112864039B - In-situ electrical performance monitoring equipment for organic semiconductor device - Google Patents
In-situ electrical performance monitoring equipment for organic semiconductor device Download PDFInfo
- Publication number
- CN112864039B CN112864039B CN202110464112.2A CN202110464112A CN112864039B CN 112864039 B CN112864039 B CN 112864039B CN 202110464112 A CN202110464112 A CN 202110464112A CN 112864039 B CN112864039 B CN 112864039B
- Authority
- CN
- China
- Prior art keywords
- probe
- organic semiconductor
- vacuum
- vacuum cavity
- situ
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to an in-situ electrical performance monitoring device for an organic semiconductor device, which comprises: the vacuum cavity provides a vacuum environment for device preparation and in-situ monitoring; an evaporation source providing a raw material for device preparation; the detection assembly comprises a probe for realizing in-situ electrical detection, a probe seat arranged outside the vacuum cavity and a probe moving platform for driving the probe seat to move, wherein a vacuum corrugated pipe is arranged between the probe seat and the vacuum cavity, and the probe is installed on the probe seat and penetrates through the vacuum corrugated pipe to be inserted into the vacuum cavity. The visible assembly is used for observing the position of the probe in the vacuum cavity and adjusting the probe moving platform to enable the probe to move to an in-situ electrical monitoring point; and the monitoring instrument is connected with the detection assembly and acquires the detection data of the detection assembly. The method can measure the electrical signal of the organic semiconductor film in situ in real time in the process of preparing the organic semiconductor film, and obtain the real-time evolution of the electrical signal along with the thickness of the film or the type of the heterojunction.
Description
Technical Field
The invention relates to the technical field of monitoring of electrical properties of organic semiconductors, in particular to in-situ electrical property monitoring equipment for an organic semiconductor device.
Background
In recent years, research and application of organic semiconductors have been rapidly developed, and research fields across multiple disciplines such as physics, chemistry, electronics, and materials science have been developed, and attention is drawn to various aspects such as optoelectronics, microelectronics, solar cells, and communication. The organic semiconductor material is easy to process into a film and has good ductility, and the appearance of the organic semiconductor material can further meet the requirements of modern electronic products on lightness, thinness, portability, easy design and the like. Compared with the traditional silicon-based semiconductor material, the product characteristic advantages of the organic semiconductor material can be summarized as follows: good mechanical flexibility, easy large-area manufacture, rich chemical structure, ultra-thin, light weight, low cost and the like.
The device process is a key field in organic semiconductor research, and can directly determine the device cost, the device performance, the integration level and even the yield. Electrical performance testing of conventional organic semiconductor device processes is performed ex-situ. The process flow is as follows: designing a device, preparing the device (including preparing a metal electrode and preparing an organic film), and testing electrical properties. The device preparation is completed in a vacuum environment (the used equipment comprises a metal evaporation plating instrument and an organic evaporation plating instrument), and then the device is taken from the vacuum environment to be subjected to electrical measurement (the used equipment comprises a probe station and a semiconductor analyzer). Therefore, the preparation link and the electrical testing link are independent from each other, and the electrical performance test is performed ex-situ.
For the ex-situ electrical performance test described above, the disadvantages are as follows:
1. the device is transferred to the atmosphere from the vacuum cavity and is easily polluted by impurities such as outside air, water and the like;
2. the device is transferred among different devices, so that the test and characterization of the same micro-area cannot be guaranteed, and inconsistent conclusion analysis is often obtained;
3. time, labor and equipment costs are high.
Under the background of complex growth dynamics and physical properties of organic semiconductor films, the ex-situ testing process brings great frustration to the development of the industry.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the problem that the in-situ monitoring of the organic semiconductor cannot be realized in the prior art, and provide the in-situ electrical performance monitoring equipment for the organic semiconductor device, which can measure the electrical signal of the organic semiconductor film in real time in the preparation process of the organic semiconductor film and obtain the real-time evolution of the electrical signal along with the film thickness or the heterojunction type.
In order to solve the above technical problem, the present invention provides an in-situ electrical performance monitoring apparatus for an organic semiconductor device, comprising:
the vacuum cavity provides a vacuum environment for device preparation and in-situ monitoring;
an evaporation source providing a raw material for device preparation;
the detection assembly comprises a probe for realizing in-situ electrical detection, a probe seat arranged outside the vacuum cavity and a probe moving platform for driving the probe seat to move, wherein a vacuum corrugated pipe is arranged between the probe seat and the vacuum cavity, and the probe is installed on the probe seat and penetrates through the vacuum corrugated pipe to be inserted into the vacuum cavity.
The visible assembly is used for observing the position of the probe in the vacuum cavity and adjusting the probe moving platform to enable the probe to move to an in-situ electrical monitoring point;
and the monitoring instrument is connected with the detection assembly to acquire the detection data of the detection assembly.
In an embodiment of the present invention, the probe moving stage is a three-axis moving platform, and includes a lifting stage driving the probe base to move up and down, a horizontal moving stage driving the probe base to move toward or away from the vacuum chamber, and a rotating stage driving the probe base to rotate.
In one embodiment of the invention, two groups of detection assemblies are included, and the detection assemblies are arranged on the side wall of the vacuum cavity.
In one embodiment of the invention, the vacuum cavity comprises an open box body and a cover plate for sealing the open, one end of the cover plate is hinged on the open box body, the other end of the cover plate can be locked on the open box body, and an object stage for placing devices is further arranged in the vacuum cavity.
In one embodiment of the invention, the side wall of the vacuum cavity is provided with a viewing window.
In an embodiment of the present invention, the vacuum chamber is further provided with an air pumping port, and the air pumping port is communicated with the vacuum pump through a pipeline.
In one embodiment of the invention, the evaporation sources are obliquely arranged on the cover plate, and the cover plate is provided with one or more groups of evaporation sources.
In one embodiment of the invention, the evaporation source comprises a heat shield assembly, a vacuum flange for supporting the heat shield assembly, a container for containing evaporation materials, and a heating assembly fixed in the heat shield assembly and used for internally containing the container, wherein the container is detachably embedded in one end of the heat shield assembly, which is far away from the vacuum flange, the container is provided with an inner cavity, one end of the container, which is far away from the vacuum flange, is provided with an opening communicated with the inner cavity, the opening is provided with a peripheral wall extending into the inner cavity, the end part of the peripheral wall, which extends into the inner cavity, is open, and the area of the peripheral wall is smaller than the area of the inner cavity, which is in the same plane with the peripheral wall.
In one embodiment of the invention, the visualization assembly comprises a CCD camera for capturing the probe position and a display capable of visual display.
In one embodiment of the invention, the film thickness meter is used for detecting the semiconductor device.
Compared with the prior art, the technical scheme of the invention has the following advantages:
the in-situ electrical performance monitoring equipment for the organic semiconductor device integrates a vacuum cavity, an evaporation source, a detection assembly, a visual assembly and a monitoring instrument, the vacuum cavity and the evaporation source are adopted to provide preparation conditions and preparation raw materials of an organic semiconductor film, the preparation of the organic semiconductor film is completed, and the detection assembly, the visual assembly and the monitoring instrument are used for realizing the real-time in-situ measurement of electrical signals of the organic semiconductor film in the preparation process of the organic semiconductor film and obtaining the real-time evolution of the electrical signals along with the thickness of the film or the type of heterojunction;
compared with the method for carrying out electrical detection after the organic semiconductor device is shifted in the prior art, the in-situ electrical performance intelligent monitoring equipment solves the problems that organic semiconductor molecules are easy to pollute the environment and the detection is inaccurate after the organic semiconductor molecules are shifted, and simultaneously greatly saves time cost, labor cost and equipment cost.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic view of the overall structure of an in-situ electrical property monitoring apparatus for organic semiconductor devices according to the present invention;
FIG. 2 is a schematic structural view of a detection assembly of the present invention;
fig. 3 is a schematic structural diagram of an evaporation source of the present invention.
The specification reference numbers indicate: 1. a vacuum chamber; 11. an open box body; 12. a cover plate; 13. an air extraction opening; 14. an object stage; 15. an observation window; 2. an evaporation source; 21. a heat shield assembly; 22. a flange; 23. a container; 231. an inner cavity; 232. an opening; 233. a peripheral wall; 24. a heating assembly; 3. a detection component; 31. a probe; 32. a probe base; 33. a probe moving stage; 34. a vacuum bellows; 41. a CCD camera; 42. a display; 5. monitoring an instrument; 6. film thickness meter.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Referring to fig. 1, an in-situ electrical performance monitoring apparatus for an organic semiconductor device according to the present invention comprises: the device comprises a vacuum cavity 1, an evaporation source 2, a detection assembly 3, a visual assembly and a monitoring instrument 5;
the vacuum cavity 1 provides a vacuum environment for device preparation and in-situ monitoring;
an evaporation source 2 for processing the raw material for device preparation;
heating the raw materials in the vacuum cavity 1 through the evaporation source 2 to gasify the raw materials, and then coating a film in the vacuum cavity 1 to finish the preparation of the organic semiconductor film;
carrying out in-situ detection on the prepared organic semiconductor film by using a probe 31 of the detection assembly 3;
acquiring detection data of the detection assembly 3 by adopting a monitoring instrument 5 connected with the detection assembly 3, realizing real-time in-situ measurement of an electrical signal of the organic semiconductor film in the preparation process of the organic semiconductor film, and acquiring real-time evolution of the electrical signal along with the film thickness or the heterojunction type;
a visual component is adopted for observing the position of the probe 31 in the vacuum cavity 1; the visual assembly comprises a CCD camera 41 for photographing the position of the probe 31 and a display 42 capable of visual display;
the movement of the probe 31 to the in situ electrical monitoring point is ensured by the cooperation of the visual component with the detection component 3. Specifically, the CCD camera 41 in the visual component captures the position of the probe 31 in real time, and uploads the position to the display 42, the position of the probe 31 is observed in the display 42, and the probe 31 is moved to the in-situ electrical monitoring point by moving the detection component 3 to drive the probe 31 to move while observing the position of the probe 31.
Compared with the method for carrying out electrical detection after the organic semiconductor device is shifted in the prior art, the in-situ electrical performance intelligent monitoring equipment solves the problems that organic semiconductor molecules are easy to pollute the environment and the detection is inaccurate after the organic semiconductor molecules are shifted, and simultaneously greatly saves time cost, labor cost and equipment cost.
Referring to fig. 1, the vacuum chamber 1 of the present embodiment includes an open box 11 and a cover plate 12 for closing the open, one end of the cover plate 12 is hinged on the open box body 11, the other end of the cover plate 12 can be locked on the open box body 11, when the cover plate 12 is buckled on the open box body 11, the vacuum cavity 1 is in a sealed state, an air pumping hole 13 is arranged on the vacuum cavity 1, the air pumping hole 13 is communicated with a vacuum pump through a pipeline, the vacuum-pumping treatment in the vacuum cavity 1 is realized by a vacuum pump, an object stage 14 for placing devices is also arranged in the vacuum cavity 1, the evaporation source 2 finishes the preparation of organic semiconductor devices on the object stage 14, after the preparation and in-situ monitoring of the organic semiconductor device are completed, the cover plate 12 is opened and the organic semiconductor device is taken out.
Specifically, the vacuum pump group in the embodiment consists of a mechanical pump, a turbo molecular pump and an ion pump, and preferably, the vacuum pump requires the system vacuum degree to be better than 2 x 10-10mbar。
In this embodiment, in order to observe the inside of the vacuum chamber 1, an observation window 15 is disposed on a sidewall of the vacuum chamber 1.
Referring to fig. 1 and 2, the detecting assembly 3 in this embodiment includes a probe 31 for implementing in-situ electrical detection, a probe seat 32 disposed outside the vacuum chamber 1, and a probe moving stage 33 for moving the probe seat 32, the probe moving platform 33 is a three-axis moving platform, and comprises a lifting platform for driving the probe base 32 to move up and down, a horizontal moving platform for driving the probe base 32 to move towards the direction of abutting against or away from the vacuum cavity 1, and a rotating platform for driving the probe base 32 to rotate, in this embodiment, the elevating table is disposed at the lowermost portion, the horizontal movement table is disposed on the elevating table, the rotation table is disposed on the horizontal movement table, set up according to actual demand the scope that the elevating platform drove probe seat 32 and remove is 5mm, sets up the scope that horizontal migration platform drove probe seat 32 to be close to or keep away from vacuum cavity 1 is 5cm, and the rotation angle that sets up the revolving stage and drive probe seat 32 is 45.
In order to ensure that the probe 31 can pass through the vacuum chamber 1 and can move in the vacuum chamber 1 within the above-mentioned moving range, a through hole for the probe 31 to pass through is formed in the sidewall of the vacuum chamber 1, and the through hole is large enough to prevent the probe 31 from moving in the through hole, after the through hole is formed, the vacuum chamber 1 of the present embodiment cannot satisfy the sealing condition, therefore, in the present embodiment, a vacuum bellows 34 is disposed between the probe holder 32 and the vacuum chamber 1, the probe 31 is mounted on the probe holder 32 and inserted into the vacuum chamber 1 through the vacuum bellows 34, one end of the vacuum bellows 34 is communicated with the through hole, the other end is hermetically disposed on the probe holder 32, and the vacuum bellows 34 can maintain the sealing property of the vacuum chamber 1 to create a vacuum environment on one hand, and on the other hand, due to the characteristics of the bellows, normal movement of the probe mount 32 is not affected.
Specifically, in order to realize the detection of the organic semiconductor device, two sets of detection assemblies 3 are arranged in this embodiment, the detection assemblies 3 are arranged on the side wall of the vacuum cavity 1, the detection of the electrical signals of the diode can be realized through the two sets of detection assemblies 3, and in other embodiments, three sets of detection assemblies 3 can be arranged to realize the detection of the electrical signals of the triode.
Referring to fig. 1, the evaporation source 2 in this embodiment is obliquely disposed on the cover plate 12, and one or more groups of evaporation sources 2 may be disposed on the cover plate 12, so that according to scientific research requirements, detection of an organic semiconductor device on a single evaporation source 2 may be implemented, detection of an organic semiconductor device on a mixed evaporation source 2 may also be implemented, and different comparison experiment groups may be disposed.
In this embodiment, in order to enable the evaporation source 2 to be obliquely arranged on the cover plate 12, referring to fig. 3, the evaporation source 2 includes a heat shielding assembly 21, a vacuum flange 22 for supporting the heat shielding assembly 21, a container 23 for containing an evaporation material, and a heating assembly 24 fixed in the heat shielding assembly 21 and used for containing the container 23, the container 23 is detachably embedded in one end of the heat shielding assembly 21 away from the vacuum flange 22, the container 23 has an inner cavity 231, and one end of the container 23 away from the vacuum flange 22 is provided with an opening 232 communicated with the inner cavity 231, the opening 232 is provided with a peripheral wall 233 extending into the inner cavity 231, and an end of the peripheral wall 233 extending into the inner cavity 231 is open and has an area smaller than an area of the inner cavity 231 in the same plane.
By providing the peripheral wall 233 extending into the inner cavity 231 at the opening 232 and opening the end of the peripheral wall 233 extending into the inner cavity 231 and having an area smaller than that of the inner cavity 231 in the same plane, an accommodating space for storing the evaporation material is formed between the peripheral wall 233 and the inner cavity 231 of the container 23, and the evaporation material can be prevented from falling from the opening 232 when the evaporation source 2 is in an inclined or inverted state, thereby achieving the purpose of installing the evaporation source 2 obliquely.
Specifically, the types of the evaporation source 2 may include: a resistance heating type evaporation source, an electron beam heating type evaporation source, an induction heating type evaporation source, a laser heating type evaporation source; the resistance type evaporation source is common, simple, economic and reliable, can be made into different capacities and shapes, and has different electrical characteristics, but under some special conditions, many materials can not be evaporated by a resistance heating mode, such as an insulating material commonly used for coating visible light and near infrared optical devices. In this case, electron beam heating must be employed; in addition, according to the actual use requirement, an induction heating type evaporation source for vaporizing the film material by induction heating using a high-frequency electromagnetic field and a laser heating type evaporation source for vaporizing the film material by absorbing heat using the light energy of the photon beam emitted from the laser source as a heat source for heating the film material may be used.
In the embodiment, the film thickness measuring device further comprises a film thickness gauge 6 for detecting the semiconductor device, wherein the film thickness gauge 6 is connected with the vacuum cavity 1 and comprises a film thickness testing head arranged in the vacuum cavity 1 and a film thickness display arranged outside the vacuum cavity 1, and the film coating thickness can be monitored in real time in the film coating process of the semiconductor device.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (8)
1. An in-situ electrical performance monitoring device for an organic semiconductor device, comprising: the method comprises the following steps:
the vacuum cavity provides a vacuum environment for device preparation and in-situ monitoring;
an evaporation source for processing the raw material prepared by the device;
the detection assembly comprises a probe for realizing in-situ electrical detection, a probe seat arranged outside the vacuum cavity and a probe moving platform for driving the probe seat to move, wherein the probe moving platform is a three-axis moving platform and comprises a lifting platform for driving the probe seat to move up and down, a horizontal moving platform for driving the probe seat to move towards the direction of leaning against or away from the vacuum cavity and a rotating platform for driving the probe seat to rotate;
the visual assembly comprises a CCD camera for shooting the position of the probe and a display capable of visually displaying, the visual assembly is used for observing the position of the probe in the vacuum cavity, and the probe is moved to an in-situ electrical monitoring point by adjusting the probe moving table;
and the monitoring instrument is connected with the detection assembly to acquire the detection data of the detection assembly.
2. The in-situ electrical performance monitoring apparatus of an organic semiconductor device according to claim 1, wherein: the vacuum cavity comprises two groups of detection components, wherein the detection components are arranged on the side wall of the vacuum cavity.
3. The in-situ electrical performance monitoring apparatus of an organic semiconductor device according to claim 1, wherein: the vacuum cavity comprises an open box body and a cover plate used for blocking the opening, one end of the cover plate is hinged to the open box body, the other end of the cover plate can be locked on the open box body, and an object stage used for placing a device is further arranged in the vacuum cavity.
4. The in-situ electrical performance monitoring apparatus of an organic semiconductor device according to claim 3, wherein: and an observation window is arranged on the side wall of the vacuum cavity.
5. The in-situ electrical performance monitoring apparatus of an organic semiconductor device according to claim 4, wherein: the vacuum cavity is also provided with an air pumping hole, and the air pumping hole is communicated with the vacuum pump through a pipeline.
6. The in-situ electrical performance monitoring apparatus of an organic semiconductor device according to claim 4, wherein: the evaporation source is obliquely arranged on the cover plate, and the cover plate is provided with one or more groups of evaporation sources.
7. The in-situ electrical performance monitoring apparatus of an organic semiconductor device according to claim 6, wherein: the evaporation source includes heat shield subassembly, is used for supporting the vacuum flange of heat shield subassembly, is used for holding evaporation material's container, is fixed in be used for built-in container's heating element in the heat shield subassembly, the container can be dismantled to inlay and locate the one end that the vacuum flange was kept away from to the heat shield subassembly, the container have the inner chamber and its one end of keeping away from the vacuum flange be equipped with the opening that is linked together with the inner chamber, the opening part be equipped with the perisporium that stretches into the inner chamber, the tip that the perisporium stretches into the inner chamber opens and its area is less than rather than the inner chamber area that is in the coplanar.
8. The in-situ electrical performance monitoring apparatus of an organic semiconductor device according to claim 1, wherein: also comprises a film thickness meter for detecting the semiconductor device.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110464112.2A CN112864039B (en) | 2021-04-28 | 2021-04-28 | In-situ electrical performance monitoring equipment for organic semiconductor device |
| PCT/CN2021/111715 WO2022227336A1 (en) | 2021-04-28 | 2021-08-10 | In-situ electrical performance intelligent monitoring device for organic semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110464112.2A CN112864039B (en) | 2021-04-28 | 2021-04-28 | In-situ electrical performance monitoring equipment for organic semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112864039A CN112864039A (en) | 2021-05-28 |
| CN112864039B true CN112864039B (en) | 2021-07-20 |
Family
ID=75992911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110464112.2A Active CN112864039B (en) | 2021-04-28 | 2021-04-28 | In-situ electrical performance monitoring equipment for organic semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN112864039B (en) |
| WO (1) | WO2022227336A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864039B (en) * | 2021-04-28 | 2021-07-20 | 苏州大学 | In-situ electrical performance monitoring equipment for organic semiconductor device |
| CN114664681B (en) * | 2022-02-14 | 2022-09-23 | 江苏中芯沃达半导体科技有限公司 | LED chip in-situ monitoring equipment and method |
| CN114695159A (en) * | 2022-04-01 | 2022-07-01 | 光渡飞通(苏州)科技有限公司 | Device with in-situ electrode preparation and photoelectric detection functions |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2837831Y (en) * | 2005-11-11 | 2006-11-15 | 中国科学院物理研究所 | Ultra-high vacuum in-situ growth, characterization and test system |
| US20090246413A1 (en) * | 2008-03-27 | 2009-10-01 | Imra America, Inc. | Method for fabricating thin films |
| CN101846635B (en) * | 2010-05-07 | 2012-05-23 | 中国科学院半导体研究所 | Ultra-high vacuum multifunctional integrated test system |
| CN103792443B (en) * | 2012-11-01 | 2016-09-28 | 国家纳米科学中心 | Probe station, preparation and the integrated system and method for test of organic film device |
| CN103789733B (en) * | 2014-02-27 | 2015-12-16 | 苏州驰鸣纳米技术有限公司 | The vacuum evaporation source that can arbitrarily angledly install and use |
| CN107543487B (en) * | 2016-06-27 | 2019-11-29 | 北京北方华创微电子装备有限公司 | A kind of original position film thickness monitoring method and device |
| CN112864039B (en) * | 2021-04-28 | 2021-07-20 | 苏州大学 | In-situ electrical performance monitoring equipment for organic semiconductor device |
-
2021
- 2021-04-28 CN CN202110464112.2A patent/CN112864039B/en active Active
- 2021-08-10 WO PCT/CN2021/111715 patent/WO2022227336A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN112864039A (en) | 2021-05-28 |
| WO2022227336A1 (en) | 2022-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112864039B (en) | In-situ electrical performance monitoring equipment for organic semiconductor device | |
| US4115736A (en) | Probe station | |
| CN2837831Y (en) | Ultra-high vacuum in-situ growth, characterization and test system | |
| CN108660419B (en) | Testing device for deposition and catalytic reaction of volatile corrosive substance film based on ultrahigh vacuum condition | |
| DE112014003891B4 (en) | Charged particle beam device and sample holder for the charged particle beam device | |
| CN103226057B (en) | Multifunctional high-efficiency laser damage test device and method in vacuum environment | |
| US9564288B2 (en) | Sample storage container, charged particle beam apparatus, and image acquiring method | |
| JPWO2015033601A1 (en) | Charged particle beam apparatus and sample image acquisition method | |
| US20200400579A1 (en) | Flexible paper-based surface-enhanced raman scattering substrate and method for preparing same | |
| CN109246860A (en) | In situ, dynamic observation material high temperature service under the microscope can be achieved | |
| CN110057684B (en) | Thermoelectric electric coupling sample stage based on in-situ observation experiment | |
| US20160291045A1 (en) | Automated specimen deposition systems and associated methods | |
| CN109283394B (en) | System and method for measuring light-dark conductivity and activation energy | |
| CN104613911B (en) | Deposition film film thickness distribution measuring system | |
| US10658150B2 (en) | Cryostation system | |
| CN115774033A (en) | Multifunctional sample bin system suitable for electron microscope and simulation method | |
| US7739057B2 (en) | Method and apparatus for measuring the rate of permeation of gases and vapours through materials | |
| CN109141769A (en) | Alleviate the method that level Hermetic Package component seals thin leak test helium degree of absorption | |
| CN110760816A (en) | Diamond on-line detection growth device and growth defect treatment method | |
| JP3239116B2 (en) | Sample transfer device | |
| JPH06232238A (en) | Method and apparatus for sample processing | |
| CN109916827B (en) | Electrochemical infrared reflectance spectrum measurement method for sample prepared in vacuum | |
| JP3683740B2 (en) | Gas analyzer for bubbles in liquid crystal cell and gas analysis method for bubbles in liquid crystal cell using the gas analyzer | |
| CN114226360A (en) | Pretreatment device for electron microscope sample and sample rod | |
| CN104596906B (en) | The water oxygen air penetrability measuring system of many measurement heads |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |