CN114647076B - Leveling system and leveling method for electrostatic MEMS Fabry-Perot cavity chip - Google Patents
Leveling system and leveling method for electrostatic MEMS Fabry-Perot cavity chip Download PDFInfo
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- 150000002367 halogens Chemical class 0.000 claims description 3
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
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Abstract
The invention provides a leveling system and a leveling method for an electrostatic MEMS Fabry-Perot cavity chip, wherein the leveling system comprises: the device comprises a processing terminal, a spectrometer, an optical collimator, a focusing module, a incoherent wide spectrum light source and a driving and adjusting assembly for leveling the MEMS Fabry-Perot cavity chip; the optical collimator is arranged at the emergent end of the optical collimator, the driving adjustment assembly is arranged between the optical collimator and the optical collimator, the optical collimator transmits spectral data to the processing terminal, and the processing terminal drives and controls the driving adjustment assembly; the driving adjustment assembly comprises a voltage control module and a chip clamp, wherein the chip clamp is used for fixing the MEMS Fabry-Perot cavity chip and is connected with four driving electrodes on the MEMS Fabry-Perot cavity chip cover plate in a conductive spring plate mode. The device can quickly find the voltage component required by each driving electrode in each filtering band, and the Fabry-Perot cavity chip is in a horizontal state during working by adding the corresponding voltage component to the driving voltage.
Description
Technical Field
The invention belongs to the technical field of MEMS Fabry-Perot cavity chips, and particularly relates to a leveling system and a leveling method of an electrostatic MEMS Fabry-Perot cavity chip.
Background
The electrostatic MEMS filter chip is a sealing chip formed by bonding two parallel plane reflectors and an optical cover plate based on the Fabry-Perot interference principle, wherein the chip is provided with 4 wedge-shaped spring beam supports and 4 conductive electrode driving execution devices, and the whole structure is shown in figures 3 and 4:
The optical cover plate 1, the actuator 2 and the optical base 3 are sequentially arranged from top to bottom, the actuator 2 moves up and down under the drive of the electrostatic driving electrode 4 on the optical cover plate 1, the gap between the actuator 2 and the fabry-perot cavity formed by the optical base 3 is changed, light rays with different center wavelengths penetrate the fabry-perot cavity, the function of spectrum selection is completed, and different narrow-wave spectrums are obtained. Wherein the actuator 2 comprises an aperture glass 21 and a wedge spring beam 22, the optical base 3 is a base glass, and the aperture glass 21 and the base glass are respectively provided with a reflective coating 5.
In actual work, the indexes of the Fabry-Perot cavity filter with excellent performance are respectively fine constant, peak transmittance and contrast. The parallelism of the front and back reflecting cavity surfaces of the Fabry-Perot cavity is a main factor influencing the quality of the three indexes, and the parallelism of the cavity surfaces directly influences the fine constant and the sensitivity to wavelength selection of the Fabry-Perot cavity of the micro-electromechanical system, so that the parallelism of the reflecting cavity surfaces is one of important parameters of the Fabry-Perot cavity filter of the micro-electromechanical system.
However, in practice, due to the existence of processing errors, the shape and the size of each beam of the supporting cavity surface structure cannot be strictly guaranteed to be consistent, and are affected by residual stress and a coating process, the internal microstructure of the beam is not uniform, the material characteristics are different, such as young's modulus, poisson ratio, electric conductivity and the like, so that the parallelism of the front cavity surface and the rear cavity surface of the fabry-perot cavity of the microelectromechanical system in practical application is poor, the filtering effect and the design value deviate greatly, and the practical application effect is poor, as shown in fig. 5.
Disclosure of Invention
In view of the above problems, a first aspect of the present invention provides a leveling system for an electrostatic MEMS fabry-perot cavity chip: the device comprises a processing terminal, a spectrometer, an optical collimator, a focusing module, a incoherent broad spectrum light source and a driving and adjusting assembly for leveling the MEMS Fabry-Perot cavity chip; the emergent end of the incoherent wide-spectrum light source is connected with a focusing module, the emergent end of the focusing module is connected with an optical collimator, the emergent end of the optical collimator is provided with the spectrometer, the driving adjustment assembly is arranged between the spectrometer and the optical collimator, the spectrometer is connected with the processing terminal through a serial port and transmits spectrum data to the processing terminal, the processing terminal is used for receiving stored data, analyzing and calculating data and transmitting corresponding voltage adjustment instructions, and the processing terminal is connected with the driving adjustment assembly through the serial port and performs driving control on the driving adjustment assembly; the driving adjustment assembly comprises a voltage control module and a chip clamp, wherein the chip clamp is used for fixing the MEMS Fabry-Perot cavity chip and is connected with four driving electrodes on the cover plate of the MEMS Fabry-Perot cavity chip in a conductive spring plate mode, and the voltage control module is used for controlling different voltage outputs and respectively sending the different voltage outputs to the four driving electrodes.
Preferably, the voltage control module comprises a power supply module, a processing module, a digital-to-analog converter and an amplifying circuit; the power supply module comprises a power supply chip and is used for providing power for each module in the voltage control module; the processing module is connected with the processing terminal and is used for receiving and processing the instruction sent by the processing terminal; the output end of the processing module is connected with the input end of the digital-to-analog converter, the input end of the amplifying circuit is connected with the output end of the digital-to-analog converter, and the processing module controls voltage output and sends the voltage output to the four driving electrodes through the digital-to-analog converter and the amplifying circuit.
Preferably, the voltage control module comprises a power supply module, a processing module, a digital-to-analog converter and an amplifying circuit; the power supply module comprises a power supply chip and is used for providing power for each module in the voltage control module; the processing module is connected with the processing terminal and is used for receiving and processing the instruction sent by the processing terminal; the output end of the processing module is connected with the input end of the digital-to-analog converter, the input end of the amplifying circuit is connected with the output end of the digital-to-analog converter, and the processing module controls voltage output and sends the voltage output to the four driving electrodes through the digital-to-analog converter and the amplifying circuit.
Preferably, the voltage control module is a PCB board, and the power module, the processing module, the digital-to-analog converter and the amplifying circuit are integrated on the PCB board.
Preferably, the incoherent broad spectrum light source adopts a stable halogen tungsten light source with the wavelength of 360nm to 2600nm.
Preferably, the driving adjustment assembly is provided with three groups and is respectively provided with an MEMS Fabry-Perot cavity chip, and a processing terminal controls the sliding rail to move and automatically switch to the next group of driving adjustment assembly after the leveling of each MEMS Fabry-Perot cavity chip is finished.
The second aspect of the invention also provides a leveling method of the electrostatic MEMS Fabry-Perot cavity chip, which adopts the leveling system of the electrostatic MEMS Fabry-Perot cavity chip and comprises the following steps:
Step 1, a broad spectrum light source emitted by an incoherent broad spectrum light source sequentially passes through a focusing module and an optical collimator, and passes through an MEMS Fabry-Perot cavity chip, a processing terminal controls a voltage control module to output a plurality of groups of driving voltages, and corresponding spectrum characteristics are obtained through a spectrometer.
Step 2, the processing terminal selects the central wavelengths of a plurality of groups of spectrums within different wave band ranges and corresponding driving voltages V dc to carry out leveling, and compensation voltage values of four electrodes and corresponding driving voltages V dc are obtained when a plurality of groups of leveling states are obtained;
Step 3, calculating the functional relation between the compensation voltages and the corresponding driving voltages V dc when the four electrodes of the MEMS Fabry-Perot cavity chip are leveled according to the compensation voltage values of the four electrodes and the corresponding driving voltages V dc in the multiple groups of leveling states obtained in the step 2;
And 4, calculating leveling parameters of other driving voltages V dc and compensation voltages under corresponding spectrum bands according to the functional relation obtained in the step 3.
Preferably, the method further comprises a step 5 of storing the leveling parameters obtained through the steps in a drive board memory of the MEMS Fabry-Perot cavity chip, and when in use, the drive board automatically compensates voltage according to the leveling parameters to level the MEMS Fabry-Perot cavity chip.
Preferably, before entering step 2, it is determined whether the driving voltage V dc and the corresponding center wavelength obtained in step 1 can cover the nominal spectrum range of 700nm to 900nm, if so, entering step 2, and if not, determining that the MEMS fabry-perot cavity chip is a failed chip.
Preferably, in the step 1, the processing terminal controls the voltage control module to output the driving voltage from 0V to 60V in steps of 2V, the corresponding spectrum characteristic is obtained by the spectrometer, and the processing terminal obtains 30 groups of driving voltages V dc and the center wavelength of the corresponding spectrum.
Preferably, in the step 2, the processing terminal selects the center wavelength of 4 groups of spectrums within the wave band range of 760nm to 860nm and the corresponding driving voltage V dc for leveling;
The leveling process is to adjust the compensation voltages DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 of the four electrodes according to the spectrum data read from the spectrometer by the processing terminal, wherein the stepping voltages when DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 are adjusted are 0.03V, and V1, V2, V3 and V4 are the driving voltages of the four driving electrodes;
V1＝Vdc+△V1
V2＝Vdc+△V2
V3＝Vdc+△V3
V4＝Vdc+△V4
After each adjustment, spectrum data are obtained through a spectrometer and sent to a processing terminal, the processing terminal analyzes whether the spectrum curves at the corresponding center wavelengths are axisymmetric, and if not, the values of delta V1, delta V2, delta V3 and delta V4 are continuously adjusted until the spectrum curves at the center wavelengths are symmetric;
In the step 3, fitting curves and functional relationships of Δv1, Δv2, Δv3 and Δv4 about V dc are obtained through a root mean square value algorithm according to the values of Δv1, Δv2, Δv3 and Δv4 and the corresponding V dc in the four sets of leveling states obtained in the step.
△V1＝f(Vdc),△V2＝f(Vdc),△V3＝f(Vdc),△V4＝f(Vdc)。
Compared with the prior art, the leveling system and the leveling method for the electrostatic MEMS Fabry-Perot cavity chip provided by the invention have the following beneficial effects:
The device and the method can quickly find the voltage component needed by each driving electrode in each filtering wave band, the Fabry-Perot cavity chip is in a horizontal state when in work by adding the corresponding voltage component to the driving voltage, whether an interference light ring formed after light rays pass through the Fabry-Perot cavity is symmetrical or not is not needed to be observed through a microscope, and the driving voltage is manually adjusted to enable the cavity surfaces of the Fabry-Perot cavity to be parallel.
Drawings
Fig. 1 is a system block diagram of a leveling system in accordance with the present invention.
Fig. 2 is a schematic structural view of a driving adjustment assembly part in the present invention.
Fig. 3 is an overall structure diagram of a MEMS fabry-perot cavity chip in the prior art.
Fig. 4 is a schematic diagram of an internal structure of a MEMS fabry-perot cavity chip in the prior art.
Fig. 5 is a schematic structural diagram of the MEMS fabry-perot cavity chip in a non-horizontal state.
FIG. 6 is a graph showing a comparison of the center wavelength spectrum curves before and after leveling.
1. An optical cover plate; 2. an actuator; 21. an aperture glass; 22. wedge spring beams; 3. an optical base; 4. an electrostatic drive electrode; 5. a reflective coating.
Detailed Description
The invention will be further described with reference to specific examples.
Example 1:
As shown in fig. 1 and 2, a leveling system of an electrostatic MEMS fabry-perot cavity chip comprises a processing terminal, a spectrometer, an optical collimator, a focusing module, a incoherent broad spectrum light source and a driving adjustment assembly for leveling the MEMS fabry-perot cavity chip; the incoherent wide-spectrum light source adopts a stable halogen tungsten light source, the wavelength is 360nm to 2600nm, the emergent end of the incoherent wide-spectrum light source is connected with the focusing module, the emergent end of the focusing module is connected with the optical collimator, the emergent end of the optical collimator is provided with the spectrometer, the driving adjustment assembly is arranged between the spectrometer and the optical collimator, the spectrometer is connected with the processing terminal through a serial port and transmits spectrum data to the processing terminal, the processing terminal is used for receiving storage data, analyzing and calculating data and transmitting corresponding voltage adjustment instructions, and the processing terminal is connected with the driving adjustment assembly through the serial port and drives and controls the driving adjustment assembly; the driving adjustment assembly comprises a voltage control module and a chip clamp, the chip clamp is used for fixing the MEMS Fabry-Perot cavity chip and is connected with four driving electrodes on the cover plate of the MEMS Fabry-Perot cavity chip in a conductive spring plate mode, and the voltage control module is used for controlling different voltage outputs and respectively sending the different voltage outputs to the four driving electrodes. The driving adjustment assembly is provided with three groups of MEMS Fabry-Perot cavity chips, and each MEMS Fabry-Perot cavity chip is leveled, and a processing terminal controls the sliding rail to move and automatically switches to the next group of driving adjustment assembly. The incoherent broad spectrum light source module emits a broad spectrum light source, the broad spectrum light source irradiates on the MEMS Fabry-Perot cavity chip (the chip is driven in a certain specific gap and can pass through a specific narrow-band spectrum) through focusing and collimation, the spectrometer receives light passing through the MEMS Fabry-Perot cavity chip, spectrum curve data of a specific wave band is obtained, and the processing terminal adjusts driving voltages on the four driving electrodes through analysis of the spectrum data.
The voltage control module can be a PCB and comprises a power supply module, a processing module, a digital-to-analog converter and an amplifying circuit; the power supply module comprises a power supply chip and is used for providing power for each module in the voltage control module; the processing module is connected with the processing terminal and is used for receiving and processing the instruction sent by the processing terminal; the output end of the processing module is connected with the input end of the digital-to-analog converter, the input end of the amplifying circuit is connected with the output end of the digital-to-analog converter, and the processing module controls voltage output and sends the voltage output to the four driving electrodes through the digital-to-analog converter and the amplifying circuit.
Example 2:
The leveling method of the electrostatic MEMS Fabry-Perot cavity chip adopts the leveling system of the electrostatic MEMS Fabry-Perot cavity chip in the embodiment 1 and comprises the following steps:
Step 1, a broad spectrum light source emitted by an incoherent broad spectrum light source sequentially passes through a focusing module and an optical collimator and passes through an MEMS Fabry-Perot cavity chip, a processing terminal controls a voltage control module to output driving voltages from 0V to 60V in a stepping way and takes 2V as a step, corresponding spectrum characteristics are obtained through a spectrometer, and 30 groups of driving voltages V dc and center wavelengths of corresponding spectrums are obtained by the processing terminal.
Step 2, the processing terminal selects the center wavelength of 4 groups of spectrums within the wave band range of 760nm to 860nm and the corresponding driving voltage V dc for leveling;
The leveling process is to adjust the compensation voltages DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 of the four electrodes according to the spectrum data read from the spectrometer by the processing terminal, wherein the stepping voltages when DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 are adjusted are 0.03V, and V1, V2, V3 and V4 are the driving voltages of the four driving electrodes;
V1＝Vdc+△V1
V2＝Vdc+△V2
V3＝Vdc+△V3
V4＝Vdc+△V4
After each adjustment, spectrum data are obtained through a spectrometer and sent to a processing terminal, the processing terminal analyzes whether the spectrum curves at the corresponding center wavelengths are axisymmetric, if not, the values of delta V1, delta V2, delta V3 and delta V4 are continuously adjusted until the spectrum curves at the center wavelengths are symmetric, as shown in fig. 6, and the MEMS Fabry-Perot cavity chip is leveled at the moment;
Step 3, obtaining fitting curves of DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 about V dc through a root mean square value algorithm according to the values of DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 and corresponding V dc when four groups of leveling states are obtained in step 2:
△V1＝f(Vdc),△V2＝f(Vdc),△V3＝f(Vdc),△V4＝f(Vdc)。
And step 4, calculating other driving voltages and leveling parameters under corresponding spectrum bands according to the fitting curve obtained in the step 3.
And storing the leveling parameters obtained through the steps in a driving plate memory of the MEMS Fabry-Perot cavity chip, and automatically compensating voltage by the driving plate according to the leveling parameters to level the MEMS Fabry-Perot cavity chip during later use.
Before entering the step 2, it is determined whether the driving voltage V dc obtained in the step1 and the corresponding center wavelength can cover the nominal spectrum range from 700nm to 900nm, if so, entering the step 2, and if not, determining that the MEMS fabry-perot cavity chip is a failed chip.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
While the foregoing describes the embodiments of the present invention, it should be understood that the present invention is not limited to the embodiments, and that various modifications and changes can be made by those skilled in the art without any inventive effort.
Claims (7)
1. A leveling method of an electrostatic MEMS Fabry-Perot cavity chip is characterized by comprising the following steps of: the leveling system comprises a processing terminal, a spectrometer, an optical collimator, a focusing module, a incoherent wide-spectrum light source and a driving and adjusting assembly for leveling the MEMS Fabry-Perot cavity chip; the emergent end of the incoherent wide-spectrum light source is connected with a focusing module, the emergent end of the focusing module is connected with an optical collimator, the emergent end of the optical collimator is provided with the spectrometer, the driving adjustment assembly is arranged between the spectrometer and the optical collimator, the spectrometer is connected with the processing terminal through a serial port and transmits spectrum data to the processing terminal, the processing terminal is used for receiving stored data, analyzing and calculating data and transmitting corresponding voltage adjustment instructions, and the processing terminal is connected with the driving adjustment assembly through the serial port and performs driving control on the driving adjustment assembly; the driving adjustment assembly comprises a voltage control module and a chip clamp, wherein the chip clamp is used for fixing the MEMS Fabry-Perot cavity chip and is connected with four driving electrodes on a cover plate of the MEMS Fabry-Perot cavity chip in a conductive spring plate mode, and the voltage control module is used for controlling different voltage outputs and respectively sending the different voltage outputs to the four driving electrodes; and comprises the following steps:
Step 1, a broad spectrum light source emitted by an incoherent broad spectrum light source sequentially passes through a focusing module and an optical collimator and passes through an MEMS Fabry-Perot cavity chip, a processing terminal controls a voltage control module to output a plurality of groups of driving voltages, and corresponding spectrum characteristics are obtained through a spectrometer;
Step 2, the processing terminal selects the center wavelength of 4 groups of spectrums within the wave band range of 760nm to 860nm and the corresponding driving voltage V dc for leveling; compensation voltage values of four electrodes and corresponding driving voltage V dc are obtained when 4 groups of leveling states are obtained;
The leveling process is to adjust the compensation voltages DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 of the four electrodes according to the spectrum data read from the spectrometer by the processing terminal, wherein the stepping voltages when DeltaV 1, deltaV 2, deltaV 3 and DeltaV 4 are adjusted are 0.03V, and V1, V2, V3 and V4 are the driving voltages of the four driving electrodes;
V1=Vdc + △V1
V2=Vdc + △V2
V3=Vdc+ △V3
V4=Vdc + △V4
After each adjustment, spectrum data are obtained through a spectrometer and sent to a processing terminal, the processing terminal analyzes whether the spectrum curves at the corresponding center wavelengths are axisymmetric, and if not, the values of delta V1, delta V2, delta V3 and delta V4 are continuously adjusted until the spectrum curves at the center wavelengths are symmetric;
Step 3, calculating the function relation between the compensation voltage and the corresponding driving voltage V dc when the four electrodes of the MEMS Fabry-Perot cavity chip are leveled according to the compensation voltage values of the four electrodes and the corresponding driving voltage V dc when the 4 groups of leveling states are obtained in the step 2;
And 4, calculating leveling parameters of other driving voltages V dc and compensation voltages under corresponding spectrum bands according to the functional relation obtained in the step 3.
2. A method for leveling an electrostatic MEMS fabry perot cavity chip as defined in claim 1, wherein: the voltage control module comprises a power supply module, a processing module, a digital-to-analog converter and an amplifying circuit; the power supply module comprises a power supply chip and is used for providing power for each module in the voltage control module; the processing module is connected with the processing terminal and is used for receiving and processing the instruction sent by the processing terminal; the output end of the processing module is connected with the input end of the digital-to-analog converter, the input end of the amplifying circuit is connected with the output end of the digital-to-analog converter, and the processing module controls voltage output and sends the voltage output to the four driving electrodes through the digital-to-analog converter and the amplifying circuit.
3. A method for leveling an electrostatic MEMS fabry perot cavity chip as defined in claim 2, wherein: the voltage control module is a PCB board, and the power module, the processing module, the digital-analog converter and the amplifying circuit are integrated on the PCB board.
4. A method for leveling an electrostatic MEMS fabry perot cavity chip as defined in claim 1, wherein: the incoherent broad spectrum light source adopts a stable halogen tungsten light source with the wavelength of 360nm to 2600nm.
5. A method for leveling an electrostatic MEMS fabry perot cavity chip as defined in claim 1, wherein: the driving adjustment assembly is provided with three groups of MEMS Fabry-Perot cavity chips, and each MEMS Fabry-Perot cavity chip is leveled, and a processing terminal controls the sliding rail to move and automatically switches to the next group of driving adjustment assembly.
6. A method for leveling an electrostatic MEMS fabry perot cavity chip as defined in claim 1, wherein: and 5, storing the leveling parameters obtained through the steps into a drive board memory of the MEMS Fabry-Perot cavity chip, and automatically compensating voltage to level the MEMS Fabry-Perot cavity chip by the drive board according to the leveling parameters when the MEMS Fabry-Perot cavity chip is used.
7. A method for leveling an electrostatic MEMS fabry perot cavity chip as defined in claim 1, wherein: before entering the step 2, judging whether the driving voltage V dc and the corresponding center wavelength obtained in the step 1 can cover the nominal spectrum range of 700nm to 900nm, if so, entering the step 2, and if not, judging the MEMS Fabry-Perot cavity chip as a disqualified chip.
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| US6747775B2 (en) * | 2000-03-20 | 2004-06-08 | Np Photonics, Inc. | Detunable Fabry-Perot interferometer and an add/drop multiplexer using the same |
| TWI366658B (en) * | 2008-05-30 | 2012-06-21 | Univ Nat Yunlin Sci & Tech | Measurement method for parallelism verification of two plane mirrors by fabry-perot interferometric principle |
| CN101320187B (en) * | 2008-07-02 | 2010-11-03 | 中国科学院光电技术研究所 | Electrostatically-driven F-P cavity MEMS wavelength tunable filter |
| IL201742A0 (en) * | 2009-10-25 | 2010-06-16 | Elbit Sys Electro Optics Elop | Tunable spectral filter |
| CN102866497B (en) * | 2012-10-23 | 2014-11-26 | 中国科学院光电技术研究所 | Parallelism-adjustable micro-electro-mechanical system Fabry-Perot cavity wavelength tunable filter |
| JP6413325B2 (en) * | 2014-05-01 | 2018-10-31 | セイコーエプソン株式会社 | Actuator device, electronic device, and control method |
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| CN106707499A (en) * | 2016-11-21 | 2017-05-24 | 苏州大学 | Capacitance feedback type tunable Fabry-Perot filter |
| CN207965381U (en) * | 2018-01-30 | 2018-10-12 | 中国科学院上海技术物理研究所 | The high-accuracy assembly system of large caliber wide spectral region F-P tunable optic filters |
| CN113884199A (en) * | 2021-09-28 | 2022-01-04 | 深圳市海谱纳米光学科技有限公司 | Calibration device and calibration method for MEMS Fabry-Perot cavity chip |
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| US6718086B1 (en) * | 2000-02-10 | 2004-04-06 | Agere Systems, Inc. | Article comprising a tunable filter |
| CN105403999A (en) * | 2015-12-23 | 2016-03-16 | 深圳先进技术研究院 | PSD feedback-based two dimensional rapid control reflector and control system thereof |
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