CN114645324A - Graphite plate based on MOCVD equipment - Google Patents
Graphite plate based on MOCVD equipment Download PDFInfo
- Publication number
- CN114645324A CN114645324A CN202210318805.5A CN202210318805A CN114645324A CN 114645324 A CN114645324 A CN 114645324A CN 202210318805 A CN202210318805 A CN 202210318805A CN 114645324 A CN114645324 A CN 114645324A
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- China
- Prior art keywords
- groove
- graphite plate
- mocvd equipment
- plate based
- recess
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the field of MOCVD equipment manufacturing, and provides a graphite plate based on MOCVD equipment, which comprises: the stone mill body, be equipped with a plurality of recesses that are used for installing the epitaxial wafer on the stone mill body, the recess is according to inner circle, centre circle, the outer lane setting with the axle center, the inner circle is provided with 6 recesses, bottom evenly distributed is equipped with a plurality of strong points in the recess, the recess is the setting of awl tube-shape. According to the invention, by adjusting the diameter of the inner ring, the inner ring can be provided with 6 grooves, supporting points are unevenly arranged at the bottom of the groove, and meanwhile, the side edge of the groove is designed to be an inclination angle of 80 degrees, so that the problems of flying and uneven heating are improved while the yield of equipment is improved.
Description
Technical Field
The invention relates to the field of MOCVD equipment manufacturing, in particular to a graphite plate based on MOCVD equipment.
Background
MOCVD (Metal-organic Chemical Vapor Deposition) equipment is mainly used for epitaxial growth of LEDs (light emitting diodes). The existing MOCVD equipment generally adopts a graphite plate for carrying and heat conduction, and the design requires that the temperature of each region on the surface of the graphite plate is consistent, so that ideal temperature is provided for epitaxial film deposition, and the aim of depositing uniform film epitaxial layers is fulfilled.
With the development of LEDs, especially Mirco LEDs, the concept of Mini LEDs in recent years, wavelength uniformity is becoming more and more important, and for this reason, Aixtron machines grown at low rotation speed are becoming the machines generally seen in the market due to the advantage of uniformity, but the cost disadvantage is caused due to the low utilization rate of the machines, and in this respect, Veeco in the united states has a clear advantage that EPIK700/EPI868 equipment of Veeco can produce 4-inch epitaxial wafers in one furnace of 35 wafers. The following problems also arise in succession due to the large size of the reaction chamber and the graphite plate. In the process of wafer growth, a wafer is loaded on a supporting point in a groove of a graphite disc, the slide glass graphite disc rotates at a high speed, and the epitaxial wafer is easy to have flying abnormality. The problem of wavelength uniformity for wafer products has also been a problem with the respective fab.
Disclosure of Invention
The invention aims to solve the defects in the background art and provides a graphite plate based on MOCVD equipment.
The technical scheme provided by the invention is as follows: a graphite plate based on MOCVD equipment, comprising: the stone mill body, be equipped with a plurality of recesses that are used for installing the epitaxial wafer on the stone mill body, the recess is according to inner circle, centre circle, the outer lane setting with the axle center, the inner circle is provided with 6 recesses, bottom evenly distributed is equipped with a plurality of strong points in the recess, the recess is the setting of awl tube-shape.
Furthermore, the grooves are formed by 36 pieces, the middle ring is formed by 12 pieces, the outer ring is formed by 18 pieces, the diameter of the inner ring is 203.81mm, the diameter of the middle ring is 393.50mm, and the diameter of the outer ring is 593.10 mm.
Further, the number of the supporting points is 8, and the supporting points are respectively arranged at the positions of 0 degree, 30 degrees, 60 degrees, 120 degrees, 180 degrees, 240 degrees, 270 degrees and 300 degrees of the groove.
Furthermore, a line from the center of any supporting point to the center of the groove is set as the position of 0 degree, and the position angles of all the supporting points are sequentially arranged along the clockwise direction of 0 degree.
Further, the distance from the center point of the supporting point to the center point of the groove is 45 mm.
Further, the support points are of circular or annular design.
Furthermore, the conical cylinder shape of the groove is formed in a way that the inner diameter is gradually increased from top to bottom, and the included angle between the inner side edge of the groove and the bottom edge of the groove is 80 degrees.
Furthermore, the supporting points are sparse at the inner edge and are tightly arranged at the outer edge.
Furthermore, the central position of the bottom of the stone grinding disc body is provided with an installation groove for connecting a rotating device.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the graphite plate, 6 inner ring grooves are formed, so that the yield of equipment is improved, and the problems of flying and uneven heating are solved.
(2) According to the graphite plate, the plurality of supporting points are arranged at the bottom in the groove in a non-uniform manner and are independent, and the periphery is the bottom area of the groove, so that the influence of heat conduction is limited; in addition, the supporting points are independently and separately designed, so that the epitaxial wafer and the supporting points are in contact with each other to be smaller, and the heat conduction quantity is reduced.
(3) According to the graphite disk disclosed by the invention, the edge of the groove is set to be an inclination angle of 80 degrees, the contact between the edge and the groove is a point when the epitaxial wafer rotates at a high speed, the heat transfer is small, and the epitaxial wafer is heated uniformly.
(4) According to the graphite disc disclosed by the invention, the support points in the epitaxial wafer grooves are designed in an uneven distribution manner, because the graphite disc is in a high-speed rotating state, the epitaxial wafer in the grooves can be subjected to a large centrifugal force, in addition, under the action of downward pressing of airflow (from top to bottom) of a cavity spraying device, the inner edge of the epitaxial wafer can be in a suspended state, and the stress on the support points at the outer edge and the edges of the grooves is heavy, so that the inner edge of the support points of the epitaxial wafer in the grooves is sparse, and the outer edge of the support points is tight; this is advantageous in improving the occurrence of flying sheet abnormality.
Drawings
FIG. 1 is a schematic structural view of a graphite disk of the present invention;
FIG. 2 is a cross-sectional view A-A of the present invention in FIG. 1;
FIG. 3 is an enlarged view of B of the present invention in FIG. 1;
FIG. 4 is a cross-sectional view of the invention at C-C in FIG. 3;
FIG. 5 is an enlarged view of F in FIG. 2 of the present invention;
the reference numbers are as follows: 1. the stone grinding disc comprises a stone grinding disc body, 2 grooves, 3 supporting points, 4 mounting grooves.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1 to 5, the present invention is a graphite plate based on MOCVD equipment, comprising: the stone mill body 1, be equipped with a plurality of recesses 2 that are used for installing the epitaxial wafer on the stone mill body 1, recess 2 sets up according to inner circle, centre circle, the outer lane with the axle center, the inner circle is provided with 6 recesses 2, bottom evenly distributed is equipped with a plurality of strong points 3 in recess 2, recess 2 is the setting of awl tube-shape.
Preferably, because the graphite plate is in a high-speed rotating state, the epitaxial wafer in the groove can be subjected to a large centrifugal force, in addition, under the action that the airflow of the cavity spraying device is pressed downwards from top to bottom, the inner edge of the epitaxial wafer can be in a suspended state, and the stress on the supporting points at the outer edge and the edge of the groove is heavy, the design of uneven distribution of the supporting points 3 in the groove 2 is favorable for improving the abnormal flying wafer.
Preferably, 6 inner ring grooves are formed, so that the problem of uneven flying and heating of the flying piece is solved while the yield of the equipment is improved.
Preferably, in the prior art, when the epitaxial wafer rotates at a high speed, the edge of the epitaxial wafer contacts with the groove 2 to form a surface, referring to fig. 4, the groove 2 is arranged in a conical cylinder shape, the inclination angle is changed, and then the contact is a point, so that the heat transfer is small, and the epitaxial wafer is heated uniformly.
Referring to fig. 4, the supporting points 3 are disposed at the bottom of the groove 2, the supporting points 3 are in direct contact with the epitaxial wafer, and the supporting points 3 are irregularly disposed and in point contact with the epitaxial wafer, so that the influence of heat conduction is limited, the heat transfer is small, and the uniformity of heating of the epitaxial wafer is facilitated.
Specifically, the bottom of stone mill body 1 is equipped with the rotation axis and covers the heating system who covers by the molybdenum, heats stone mill body 1 through heating system for stone mill body 1 keeps in epitaxial growth temperature range, thereby realizes the shaping of film.
Furthermore, the grooves 2 are formed by 36 pieces, the middle ring is formed by 12 pieces, the outer ring is formed by 18 pieces, the diameter of the inner ring is 203.81mm, the diameter of the middle ring is 393.50mm, and the diameter of the outer ring is 593.10 mm.
Further, the number of the supporting points 3 is 8, and the supporting points 3 are respectively arranged at the positions of 0 °, 30 °, 60 °, 120 °, 180 °, 240 °, 270 °, and 300 ° of the groove 2.
Further, a line from the center of any supporting point 3 to the center of the groove 2 is set as the 0-degree position, and the position angles of the supporting points 3 are sequentially arranged along the 0-degree clockwise direction.
As shown in fig. 3, a supporting point 3 is provided at a position of 0 ° as a starting point, and the supporting points 3 are provided at positions of 30 °, 60 °, 120 °, 180 °, 240 °, 270 °, and 300 ° in order clockwise.
Further, the distance from the center point of the supporting point 3 to the center point of the groove 2 is 45 mm.
Preferably, the support points 3 are separated on each side from the peripheral walls of the recess 2.
Further, the support points 3 are of circular or ring-shaped design.
Further, the conical cylinder shape of the groove 2 is set to gradually increase the inner diameter from top to bottom, and an included angle between the inner side edge of the groove 2 and the bottom edge of the groove 2 is 80 degrees.
In the prior art, the edge of the groove 2 is set to be at an angle of 90 degrees, and the edge is contacted with the groove 2 to form a surface when the epitaxial wafer rotates at high speed; preferably, referring to fig. 4, the groove 2 of this embodiment is set to have an inclination angle of 80 degrees, and when the epitaxial wafer rotates at a high speed, the edge contacts with the groove 2 as a point, so that the heat transfer is small, and the epitaxial wafer is heated uniformly.
Further, the supporting points 3 are sparse at the inner edge and are closely arranged at the outer edge.
Referring to fig. 3, preferably, the inner edge of the inner extension piece supporting point 3 of the groove 2 is sparse, and the outer edge is tight, which is beneficial to improving the occurrence of the flying piece abnormity.
Furthermore, the central position of the bottom of the stone grinding disc body 1 is provided with a mounting groove 4 for connecting a rotating device.
The working principle is as follows: according to the invention, by adjusting the distance of the inner ring, 6 grooves 2 can be arranged on the inner ring, the supporting points 3 are unevenly arranged at the bottom of the grooves 2, and the side edges of the grooves 2 are designed to be an inclination angle of 80 degrees, so that the problems of flying and uneven heating are improved while the yield of equipment is improved.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of various elements and methods are not limited to the specific structures, shapes or modes of operation set forth in the examples.
It is also noted that the illustrations herein may provide examples of parameters that include particular values, but that these parameters need not be exactly equal to the corresponding values, but may be approximated to the corresponding values within acceptable error tolerances or design constraints. Directional phrases used in the embodiments, such as those referring to "upper", "lower", "front", "rear", "left", "right", etc., refer only to the orientation of the attached drawings and are not intended to limit the scope of the present application.
While the foregoing description shows and describes the preferred embodiments of the present invention, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as described herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. A graphite plate based on MOCVD equipment, comprising: stone mill body (1), its characterized in that, be equipped with a plurality of recesses (2) that are used for installing the epitaxial wafer on stone mill body (1), inner circle, centre circle, the outer lane setting according to the coaxial axle center in recess (2), the inner circle is provided with 6 recesses (2), bottom evenly distributed is equipped with a plurality of strong points (3) in recess (2), recess (2) are the setting of awl tube-shape.
2. The graphite plate based on MOCVD equipment of claim 1, wherein the grooves (2) are arranged in 36 pieces, the middle ring is 12 pieces, the outer ring is 18 pieces, the diameter of the inner ring is 203.81mm, the diameter of the middle ring is 393.50mm, and the diameter of the outer ring is 593.10 mm.
3. The graphite plate based on MOCVD equipment according to claim 1, wherein the number of the support points (3) is 8, and the support points (3) are respectively arranged at the positions of 0 °, 30 °, 60 °, 120 °, 180 °, 240 °, 270 °, and 300 ° of the groove (2).
4. The graphite plate based on MOCVD equipment according to claim 3, wherein a line from the center of any support point (3) to the center of the groove (2) is set as the 0-degree position, and the position angles of the support points (3) are sequentially set along the 0-degree clockwise direction.
5. The graphite plate based on MOCVD equipment according to claim 1, wherein the distance from the center point of the support point (3) to the center point of the groove (2) is 45 mm.
6. A MOCVD tool-based graphite plate according to claim 1, wherein the support points (3) are of circular or annular design.
7. The graphite plate based on MOCVD equipment according to claim 1, wherein the conical cylindrical shape of the groove (2) is arranged such that the inner diameter is gradually increased from top to bottom, and an included angle between the inner side edge of the groove (2) and the bottom edge of the groove (2) is 80 degrees.
8. The graphite plate based on MOCVD equipment according to claim 1, wherein the support points (3) are sparsely arranged at the inner edge and are closely arranged at the outer edge.
9. The graphite plate based on MOCVD equipment according to claim 1, wherein a mounting groove (4) for connecting a rotating device is formed in the center of the bottom of the stone grinding plate body (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210318805.5A CN114645324A (en) | 2022-03-29 | 2022-03-29 | Graphite plate based on MOCVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210318805.5A CN114645324A (en) | 2022-03-29 | 2022-03-29 | Graphite plate based on MOCVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114645324A true CN114645324A (en) | 2022-06-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210318805.5A Pending CN114645324A (en) | 2022-03-29 | 2022-03-29 | Graphite plate based on MOCVD equipment |
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| Country | Link |
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| CN (1) | CN114645324A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116145113A (en) * | 2023-02-13 | 2023-05-23 | 上海福赛特机器人股份有限公司 | MOCVD wafer integrated loading and unloading device |
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| CN102983093A (en) * | 2012-12-03 | 2013-03-20 | 安徽三安光电有限公司 | Graphite wafer carrier used during manufacturing process of LED epitaxy wafers |
| CN105568371A (en) * | 2015-12-30 | 2016-05-11 | 晶能光电（常州）有限公司 | Graphite disc for improving mean value of wavelengths of all rings of silicon-based nitride |
| CN107326342A (en) * | 2017-08-02 | 2017-11-07 | 中晟光电设备（上海）股份有限公司 | For the graphite plate in MOCVD device |
| CN112144113A (en) * | 2019-06-28 | 2020-12-29 | 聚灿光电科技股份有限公司 | Graphite carrying disc and MOCVD (metal organic chemical vapor deposition) reaction device with same |
| CN112687609A (en) * | 2020-12-25 | 2021-04-20 | 至芯半导体(杭州)有限公司 | Method for growing AlN epitaxial layer by using graphite disc and substrate and graphite disc |
| CN213652635U (en) * | 2019-10-15 | 2021-07-09 | 厦门三安光电有限公司 | Graphite plate and deposition device |
| US20220005728A1 (en) * | 2019-12-20 | 2022-01-06 | Enkris Semiconductor, Inc. | Wafer susceptor and chemical vapor deposition apparatus |
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2022
- 2022-03-29 CN CN202210318805.5A patent/CN114645324A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983093A (en) * | 2012-12-03 | 2013-03-20 | 安徽三安光电有限公司 | Graphite wafer carrier used during manufacturing process of LED epitaxy wafers |
| CN105568371A (en) * | 2015-12-30 | 2016-05-11 | 晶能光电（常州）有限公司 | Graphite disc for improving mean value of wavelengths of all rings of silicon-based nitride |
| CN107326342A (en) * | 2017-08-02 | 2017-11-07 | 中晟光电设备（上海）股份有限公司 | For the graphite plate in MOCVD device |
| CN112144113A (en) * | 2019-06-28 | 2020-12-29 | 聚灿光电科技股份有限公司 | Graphite carrying disc and MOCVD (metal organic chemical vapor deposition) reaction device with same |
| CN213652635U (en) * | 2019-10-15 | 2021-07-09 | 厦门三安光电有限公司 | Graphite plate and deposition device |
| US20220005728A1 (en) * | 2019-12-20 | 2022-01-06 | Enkris Semiconductor, Inc. | Wafer susceptor and chemical vapor deposition apparatus |
| CN112687609A (en) * | 2020-12-25 | 2021-04-20 | 至芯半导体(杭州)有限公司 | Method for growing AlN epitaxial layer by using graphite disc and substrate and graphite disc |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116145113A (en) * | 2023-02-13 | 2023-05-23 | 上海福赛特机器人股份有限公司 | MOCVD wafer integrated loading and unloading device |
| CN116145113B (en) * | 2023-02-13 | 2024-05-03 | 上海福赛特机器人股份有限公司 | MOCVD wafer integrated loading and unloading device |
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