CN109797377B - Wafer carrying disc and metal organic chemical vapor deposition equipment - Google Patents
Wafer carrying disc and metal organic chemical vapor deposition equipment Download PDFInfo
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- CN109797377B CN109797377B CN201711135837.7A CN201711135837A CN109797377B CN 109797377 B CN109797377 B CN 109797377B CN 201711135837 A CN201711135837 A CN 201711135837A CN 109797377 B CN109797377 B CN 109797377B
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Abstract
The invention provides a wafer carrying disc which comprises a rotating shaft center, a central leveling area, a wafer setting area and a plurality of wafer containing grooves. The rotation axis passes through the center of the central flat area. The wafer setting area surrounds the central flat area. The plurality of wafer accommodating grooves are arranged in the wafer arrangement area. The diameter of each wafer accommodating groove is D, and the radius of the central flat area is 0.5D-3D. The surface of the central flat area is a flat plane. A wafer carrier and a metal organic chemical vapor deposition apparatus using either of the two wafer carriers are also provided.
Description
Technical Field
The invention relates to a carrying disc and equipment, in particular to a wafer carrying disc and metal organic chemical vapor deposition equipment.
Background
Metal Organic Chemical Vapor Deposition (MOCVD) is currently one method of performing epitaxial processes on wafers. In the MOCVD process, a wafer is arranged on a wafer carrier. The desired crystal growth is achieved by controlling process parameters such as temperature, gas pressure and gas flow rate within the chamber. Based on throughput considerations, it is common to place as many wafers as possible on the wafer boat. However, if the distance between adjacent wafers is too close, the wavelength uniformity of the wafers is easily affected (wavelength uniformity).
Disclosure of Invention
The invention provides a wafer carrier disk, which can improve the wavelength uniformity.
The invention provides metal organic chemical vapor deposition equipment which uses the wafer carrying disc.
The invention discloses a wafer carrying disc, which comprises a rotating shaft center, a central leveling area, a wafer setting area and a plurality of wafer containing grooves. The rotation axis passes through the center of the central flat area. The wafer setting area surrounds the central flat area. The plurality of wafer accommodating grooves are arranged in the wafer arrangement area. The diameter of each wafer accommodating groove is D, and the radius of the central flat area is 0.5D-3D. The surface of the central flat area is a flat plane.
In an embodiment of the invention, the thickness of the central flat area is greater than the depth of each wafer accommodating groove.
In one embodiment of the present invention, the radius of the central flat region is D-2D.
In an embodiment of the invention, a surface roughness of the central flat area is smaller than a surface roughness of the wafer accommodating groove.
The invention provides a wafer carrying disc, which comprises a rotating shaft center, a first virtual ring line, a second virtual ring line adjacent to the first virtual ring line and a plurality of wafer containing grooves. The first virtual loop line and the second virtual loop line take the rotating shaft center as the center of a circle and have different radiuses. The plurality of wafer accommodating grooves are arranged at intervals and arranged on the first virtual ring line and the second virtual ring line, wherein the diameter of each wafer accommodating groove is D. The shortest distance between the edges of any two adjacent wafer accommodating grooves respectively positioned on the first virtual loop line and the second virtual loop line is 0.1D-5D.
In an embodiment of the invention, the shortest distance between the edges of any two adjacent wafer accommodating grooves respectively located on the first virtual loop line and the second virtual loop line is 0.2D-3D.
In an embodiment of the invention, the wafer carrier further includes a central flat region and a wafer-disposing region surrounding the central flat region. The rotation axis passes through the center of the central flat area. The first virtual loop line and the second virtual loop line are located in the wafer setting area. The radius of the central flat area is 0.5D-3D. The surface of the central flat area is a flat plane.
In an embodiment of the invention, the thickness of the central flat area is greater than the depth of each wafer accommodating groove.
In an embodiment of the invention, a surface roughness of the central flat area is smaller than a surface roughness of the wafer accommodating groove.
The invention relates to metal organic chemical vapor deposition equipment which comprises a cavity, a rotating device, a gas supply source and a wafer carrying disc. The rotating device is positioned in the cavity. The gas supply is in communication with the chamber. The wafer carrying disc is positioned in the cavity and arranged on the rotating device. The wafer carrying disc comprises a rotating shaft center, a first virtual ring line, a second virtual ring line adjacent to the first virtual ring line and a plurality of wafer accommodating grooves. The first virtual loop line and the second virtual loop line take the rotating shaft center as the center of a circle and have different radiuses. The plurality of wafer accommodating grooves are spaced from each other and are arranged on the first virtual loop line and the second virtual loop line. The diameter of each wafer receiving groove is D. The shortest distance between the edges of any two adjacent wafer accommodating grooves respectively positioned on the first virtual loop line and the second virtual loop line is 0.1D-5D. The gas supply injects gas into the chamber from above the chamber. The wafer carrier rotates around the rotation axis.
In an embodiment of the invention, the shortest distance between any two adjacent wafer accommodating grooves respectively located on the first virtual loop line and the second virtual loop line is 0.2D-3D.
In an embodiment of the present invention, the wafer carrier further includes a central planarization region and a wafer installation region. The rotation axis passes through the center of the central flat area. The first virtual loop line and the second virtual loop line are located in the wafer setting area. The plurality of wafer accommodating grooves are formed in the surface. The radius of the central flat area is 0.5D-3D, and the surface of the central flat area is a flat plane.
In an embodiment of the invention, the thickness of the central flat area is greater than the depth of each wafer accommodating groove.
In an embodiment of the invention, a surface roughness of the central flat area is smaller than a surface roughness of the wafer accommodating groove.
Based on the above, in the wafer loading tray according to the embodiment of the invention, the air flow interference caused by the too close distance between the wafers is improved by the design that the wafer accommodating grooves are not formed in the central flat area or by controlling the shortest distance between the edges of any two adjacent wafer accommodating grooves on the first virtual loop line and the second virtual loop line. Therefore, the wafer carrying disc provided by the embodiment of the invention can improve the wavelength uniformity. In addition, the wafer with good epitaxial quality can be manufactured by using the metal organic chemical vapor deposition equipment of the wafer carrying disc.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1A is a schematic top view of a wafer carrier according to a first embodiment of the present invention;
FIG. 1B is a schematic cross-sectional view taken along line A-A' of FIG. 1A;
FIGS. 2 and 3 are schematic top views of wafer carriers according to second and third embodiments of the present invention, respectively;
FIG. 4 is a schematic view of a MOCVD apparatus according to an embodiment of the present invention.
The reference numbers illustrate:
10: metal organic chemical vapor deposition equipment
12: cavity body
14: gas supply source
16. 100, 200, 300: wafer carrying disc
18: rotating device
CR: central flat area
D: diameter of
DM: shortest distance
DT: depth of field
F: gas (es)
G: wafer accommodation groove
HT: distance between two adjacent plates
R: radius of
R1: first virtual loop line
R2: second virtual loop line
RA: rotating axle center
SB: bottom surface
Cs: surface of
Gs: bottom surface
TCR: thickness of
W: wafer
WR: wafer setting area
A-A': cutting line
Detailed Description
The technical content, characteristics and effects of the invention will be clearly shown in the following detailed description of the embodiments in combination with the accompanying drawings. Directional terms as referred to in the following examples, for example: "upper", "lower", "front", "rear", "left", "right", etc., refer only to the orientation of the figures. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting. Also, in any of the following embodiments, the same or similar elements will be given the same or similar reference numerals.
The wafer carrier plate in any of the following embodiments may be used in an mocvd apparatus. In the metal organic chemical vapor deposition process, the wafer carrier is used for carrying a plurality of wafers to be processed. The wafer carrier plate may be formed from any material capable of withstanding processing temperatures. For example, the material of the wafer carrier may be graphite or a graphite coating material, but not limited thereto.
FIG. 1A is a schematic top view of a wafer carrier according to a first embodiment of the invention. FIG. 1B is a schematic cross-sectional view taken along line A-A' of FIG. 1A. Referring to fig. 1A and 1B, a wafer carrier 100 according to a first embodiment of the present invention includes a bottom surface SB, a rotation axis RA, a central planarization region CR, a wafer-disposing region WR, and a plurality of wafer-receiving grooves G. The rotation axis RA passes through the center of the central flat region CR (the shape of the central flat region CR in this embodiment is, for example, a circle, and the center of the central flat region CR is the center of the central flat region CR). The wafer-setting region WR surrounds the central flat region CR. The plurality of wafer accommodating grooves G are arranged in the wafer setting area WR. The diameter of each wafer accommodating groove G is D, and the radius R of the central flat region CR is 0.5D-3D, preferably D-2D. The thickness TCR of the wafer boat 100 in the central flat region CR is greater than the depth DT of each wafer receiving slot G in the wafer-placing region WR. Here, the radius of the central flat region CR is defined as the shortest distance from the rotation axis RA to the edge of the wafer accommodation groove G. In more detail, in the wafer carrier 100 of the first embodiment, the wafer accommodating groove G is not formed in the range of the distance radius R from the rotation axis RA (i.e. in the range of the central flat region CR), and there is no height pattern, so that the surface Cs of the central flat region CR presents a flat plane; the wafer-disposing region WR has a concave wafer-receiving groove G, i.e., the distance (i.e., the thickness TCR) from the surface Cs to the bottom surface SB of the wafer carrier 100 in the central flat region CR is greater than the distance HT from the bottom surface Gs to the bottom surface SB of the wafer-receiving groove G.
Further, the plurality of wafer receiving slots G are located on the wafer carrier 100 opposite the bottom surface SB, that is, each of the plurality of wafer receiving slots G extends toward the bottom surface SB of the wafer carrier 100 to form a recess for receiving a wafer, and the surface Cs of the central planarization region CR and the bottom surface Gs of the wafer receiving slot G are both formed opposite the bottom surface SB and substantially parallel to the bottom surface SB. However, the plurality of wafer receiving grooves G do not penetrate the wafer blade 100. That is, the height difference of the central planarized region CR is much smaller than the height difference of the wafer-setting region WR. For example, the height difference of the surface Cs of the central flat region CR is in the range of 0 to 0.1DT and is a continuous flat plane, but not limited thereto. In the present embodiment, the surface Cs of the central flat region CR is a flat surface, that is, the height difference of the surface Cs is 0, and the height difference of the wafer-disposing region WR is the depth DT of the wafer-accommodating groove G.
During the processing, the wafers are respectively disposed in the wafer receiving grooves G, and the wafer carrier 100 rotates around the rotation axis RA, so that the wafers revolve around the rotation axis RA, which helps to uniformly expose the processing surface of each wafer to the gas atmosphere. Each wafer receiving groove G may be formed by patterning, so that the bottom surface Gs or a side surface (not numbered) of the wafer receiving groove G may also be roughened by the processing, such that the surface roughness of the bottom surface Gs or the side surface is greater than the surface roughness of the surface Cs of the central flat region CR, so that the plurality of wafers are more firmly fixed in the plurality of wafer receiving grooves G during the processing, thereby preventing the plurality of wafers from being separated from the plurality of wafer receiving grooves G when the wafer carrier 100 rotates.
Through the design that the wafer accommodating groove G is not arranged in the central flat area CR, the air flow interference generated by too close wafer arrangement distance can be avoided, and the uniformity of a film deposited on the wafer can be improved.
Fig. 2 and 3 are schematic top views of wafer carriers according to second and third embodiments of the invention.
Referring to fig. 2 and 3, the wafer carrier 200 of the second embodiment and the wafer carrier 300 of the third embodiment of the present invention also include a rotation axis RA and a plurality of wafer receiving grooves G. The plurality of wafer receiving grooves G are arranged at intervals on the first virtual ring line R1 and the second virtual ring line R2. The first and second virtual rings R1 and R2 are defined according to the arrangement of the plurality of wafer receiving slots G, and may not be used to form physical marks on wafer carriers (e.g., the wafer carrier 200 and the wafer carrier 300). Further, the plurality of wafer receiving grooves G are arranged in at least one ring-shaped array around the rotation axis RA, and one of the plurality of wafer receiving grooves G may be (but is not required to be) disposed at the center of the wafer carrier. The virtual ring line is formed along the central connecting line of the plurality of wafer accommodating grooves G of the same ring-shaped array. In the case where only one wafer receiving groove G is provided at the center of the wafer carrier, the first virtual loop R1 substantially coincides with the rotation axis RA. However, for clarity of illustration of the first virtual loop R1, the first virtual loop R1 in fig. 3 is shown as encircling the rotational axis RA.
In the second embodiment shown in fig. 2, the plurality of wafer accommodating grooves G are arranged in two ring-shaped arrays. The two ring arrays share a central axis (i.e., the axis of rotation RA) and are arranged outward from the center of the wafer carrier 200. The two ring arrays define a first virtual ring line R1 and a second virtual ring line R2, respectively. In the third embodiment shown in fig. 3, the plurality of wafer receiving grooves G are arranged in a ring-shaped array, except for the wafer receiving groove G located at the center of the wafer carrier 300. The wafer receiving slot G at the center of the wafer carrier 300 defines a first virtual ring line R1, and the ring array defines a second virtual ring line R2.
In the second and third embodiments, each wafer receiving groove G has a diameter D, and the shortest distance DM between the edges of any two adjacent wafer receiving grooves G on the first virtual ring line R1 and the second virtual ring line R2 is greater than 0.1D and less than 5D. The shortest distance DM is preferably 0.2D to 3D. By controlling the shortest distance DM between two adjacent wafer accommodating grooves G on two adjacent virtual loops, the air flow interference generated by too close distance between two adjacent wafers on two adjacent virtual loops can be improved, and the problem of too low productivity generated by too far distance between two adjacent wafers on two adjacent virtual loops can be avoided. Therefore, the wafer carrier 200 and the wafer carrier 300 can improve the uniformity of the thin film deposited on the wafer and also can improve the productivity.
It should be noted that although the second and third embodiments are illustrated with two virtual ring lines, the number of virtual ring lines may be changed as required (the wafer carrier may also include more than two virtual ring lines) and is not limited to the illustration shown in fig. 2 and 3.
FIG. 4 is a schematic view of a MOCVD apparatus according to an embodiment of the present invention.
Referring to fig. 4, a mocvd apparatus 10 according to an embodiment of the present invention includes a chamber 12, a gas supply 14, and a wafer carrier 16. A gas supply 14 is in communication with the chamber 12, and the gas supply 14 provides gases required for processing. A wafer carrier 16 is disposed in the chamber 12. The wafer carrier 16 may be the wafer carrier 100 of fig. 1A and 1B, the wafer carrier 200 of fig. 2, or the wafer carrier 300 of fig. 3.
During the processing, the wafers W are respectively disposed in the wafer receiving grooves G of the wafer carrier 16. The plurality of wafers W may be disk-shaped structures formed from sapphire, silicon carbide, or other crystalline substrates. The gas supply 14 injects gas F into the chamber 12 from above the chamber 12. The MOCVD apparatus 10 may further include a rotation device 18, wherein a rotation axis (not shown) of the rotation device 18 is aligned with the rotation axis RA of the wafer carrier 16 and is connected to a rotation driving mechanism. The rotation driving mechanism drives the rotation shaft to rotate, so as to drive the wafer carrier 16 to rotate around the rotation axis RA, so that the wafers W revolve around the rotation axis RA, which is helpful for uniformly exposing the processing surface S of each wafer W to the gas environment. In the present embodiment, the wafers W only revolve around the rotation axis RA, and do not rotate in the wafer accommodation groove G. Preferably, the processing surface S of the wafer W does not protrude from the wafer accommodating groove G, and the distance H from the processing surface S to the bottom surface Gs of the wafer accommodating groove G is not greater than 0.7DT, i.e. H is greater than or equal to 0.7DT and less than or equal to DT. If the processing surface S protrudes out of the wafer accommodating groove G, the wafer W is unstable due to the centrifugal force, and if the processing surface S is too low, the uniformity of film deposition is affected.
The wafer carrier 16 improves the air flow interference caused by the too close distance between the wafers W by the design of the central flat area without the wafer receiving grooves G (such as the wafer carrier 100 shown in fig. 1A and 1B) or by controlling the shortest distance between two adjacent wafer receiving grooves G on two adjacent virtual circular lines (such as the wafer carrier 200 shown in fig. 2 or the wafer carrier 300 shown in fig. 3). Thus, the wafer blade 16 may improve wavelength uniformity. The MOCVD apparatus 10 can manufacture wafers with good epitaxial quality by using the wafer boat 16. In an example, the mocvd apparatus 10 may reduce an average wavelength difference of a plurality of wafers by 33%, a standard deviation of a wavelength of the plurality of wafers by 27%, and a standard deviation of a wavelength within a wafer (within wafer) of each of the plurality of wafers by 41%.
The MOCVD apparatus 10 may further include other components or devices according to various requirements. For example, the mocvd apparatus 10 may further include a lift mechanism (not shown) coupled to the wafer carrier 16 to adjust a distance between the wafer carrier 16 and the gas inlet. In addition, the mocvd apparatus 10 may further include a pumping device (not shown) in communication with the chamber 12 to perform a pumping function. In addition, the mocvd apparatus 10 may further include a cooling device (not shown) and a heating device (not shown) to control the temperature in the chamber 12 or the temperature of the wafer carrier 16.
In summary, in the wafer loading tray according to the embodiment of the invention, the air flow interference caused by the too close distance between the wafers is improved by the design that the central flat area is not provided with the wafer accommodating grooves or by controlling the shortest distance between two adjacent wafer accommodating grooves on two adjacent virtual circular lines. Therefore, the wafer carrying disc provided by the embodiment of the invention can improve the wavelength uniformity. In addition, the wafer with good epitaxial quality can be manufactured by using the metal organic chemical vapor deposition equipment of the wafer carrying disc.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A wafer carrier, comprising:
rotating the axis;
a first virtual loop;
a second virtual loop line adjacent to the first virtual loop line, wherein the first virtual loop line and the second virtual loop line have different radiuses by taking the rotation axis as a circle center; and
and the wafer accommodating grooves are arranged at intervals and are arranged on the first virtual loop line and the second virtual loop line, the diameter of each wafer accommodating groove is D, and the shortest distance between the edges of any two adjacent wafer accommodating grooves on the first virtual loop line and the second virtual loop line is 0.1-5D.
2. The wafer carrier as claimed in claim 1, wherein the shortest distance between the edges of any two adjacent wafer receiving slots on the first virtual ring line and the second virtual ring line is 0.2D-3D.
3. The wafer carrier of claim 1, further comprising a central flat region and a wafer-placing region surrounding the central flat region, wherein the rotation axis passes through a center of the central flat region, the first virtual circular line, the second virtual circular line and the wafer-receiving groove are located in the wafer-placing region, a radius of the central flat region is 0.5D-3D, and a surface of the central flat region is a flat plane.
4. A wafer carrier as claimed in claim 3 wherein the central planar region has a thickness greater than the depth of each wafer receiving slot.
5. The wafer carrier of claim 3, wherein the surface roughness of the surface at the central flat region is less than the surface roughness of the wafer receiving groove.
6. A metal organic chemical vapor deposition apparatus, comprising:
a cavity;
the rotating device is positioned in the cavity;
a gas supply in communication with the chamber; and
a wafer carrier plate located in the cavity and disposed on the rotating device, the wafer carrier plate including a rotating axis, a first virtual loop line, a second virtual loop line adjacent to the first virtual loop line, and a plurality of wafer accommodating grooves, the first virtual loop line and the second virtual loop line having different radiuses with the rotating axis as a center, the plurality of wafer accommodating grooves being spaced from each other and arranged on the first virtual loop line and the second virtual loop line, wherein each wafer accommodating groove has a diameter D, and a shortest distance between edges of any two adjacent wafer accommodating grooves respectively located on the first virtual loop line and the second virtual loop line is 0.1D-5D,
wherein the gas supply injects gas into the chamber from above the chamber and the wafer carrier disk rotates about the axis of rotation.
7. The MOCVD apparatus of claim 6, wherein the shortest distance between any two adjacent wafer receiving slots respectively located on the first virtual loop and the second virtual loop is 0.2D-3D.
8. The mocvd apparatus according to claim 6, wherein the wafer carrier further comprises a central flat region and a wafer installation region, wherein the rotation axis passes through a center of the central flat region, the first virtual circular line, the second virtual circular line and the wafer accommodation groove are located in the wafer installation region, a radius of the central flat region is 0.5D-3D, and a surface of the central flat region is a flat plane.
9. The mocvd apparatus of claim 8, wherein a thickness of the central flat region is greater than a depth of each wafer receiving slot.
10. The mocvd apparatus of claim 8, wherein a surface roughness of the central flat region is less than a surface roughness of the wafer receiving groove.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711135837.7A CN109797377B (en) | 2017-11-16 | 2017-11-16 | Wafer carrying disc and metal organic chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711135837.7A CN109797377B (en) | 2017-11-16 | 2017-11-16 | Wafer carrying disc and metal organic chemical vapor deposition equipment |
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| CN109797377A CN109797377A (en) | 2019-05-24 |
| CN109797377B true CN109797377B (en) | 2021-10-22 |
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| CN111490002B (en) * | 2020-04-21 | 2023-06-27 | 錼创显示科技股份有限公司 | Carrier plate structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102086515A (en) * | 2009-12-02 | 2011-06-08 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN203947179U (en) * | 2014-06-20 | 2014-11-19 | 安徽三安光电有限公司 | Epitaxy chip carrying disk |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090086400A1 (en) * | 2007-09-28 | 2009-04-02 | Intevac, Inc. | Electrostatic chuck apparatus |
| US8216379B2 (en) * | 2009-04-23 | 2012-07-10 | Applied Materials, Inc. | Non-circular substrate holders |
| US9230846B2 (en) * | 2010-06-07 | 2016-01-05 | Veeco Instruments, Inc. | Multi-wafer rotating disc reactor with inertial planetary drive |
| JP2014104522A (en) * | 2012-11-26 | 2014-06-09 | Sumitomo Metal Mining Co Ltd | Single-side processing method of wafer and production method of wafer |
| KR20150098432A (en) * | 2014-02-20 | 2015-08-28 | 서울바이오시스 주식회사 | Wafer carrier |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102086515A (en) * | 2009-12-02 | 2011-06-08 | 东京毅力科创株式会社 | Substrate processing apparatus |
| CN203947179U (en) * | 2014-06-20 | 2014-11-19 | 安徽三安光电有限公司 | Epitaxy chip carrying disk |
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