CN109797377A - Wafer carrier and equipment of metal organic chemical vapor deposition - Google Patents
Wafer carrier and equipment of metal organic chemical vapor deposition Download PDFInfo
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- CN109797377A CN109797377A CN201711135837.7A CN201711135837A CN109797377A CN 109797377 A CN109797377 A CN 109797377A CN 201711135837 A CN201711135837 A CN 201711135837A CN 109797377 A CN109797377 A CN 109797377A
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- wafer
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- loop wire
- virtual loop
- clear area
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Abstract
The present invention provides a kind of wafer carrier comprising axis of rotation, center clear area, wafer setting area and multiple wafer accommodation grooves.Axis of rotation passes through the center of center clear area.Area is arranged around center clear area in wafer.Multiple wafer accommodation grooves are set to wafer setting area.The diameter of each wafer accommodation groove is D, and the radius of center clear area is 0.5D~3D.The surface of center clear area is flat plane.A kind of wafer carrier and any equipment of metal organic chemical vapor deposition using above two wafer carrier are separately provided.
Description
Technical field
The present invention relates to a kind of load plate and equipment more particularly to a kind of wafer carrier and Metallo-Organic Chemical Vapor are heavy
Product equipment.
Background technique
Metallo-Organic Chemical Vapor deposits (Metal Organic Chemical Vapor Deposition, MOCVD)
A kind of method of epitaxy processing is carried out on wafer at present.During MOCVD, wafer is arranged in wafer carrier.Pass through
The processing parameters such as temperature, air pressure and gas flow rate are in control chamber body to obtain desired crystal growth.Based on yield
It considers, it will usually wafer as much as possible is put in wafer carrier.If being easy however, the distance between adjacent wafers are excessively close
Influence the wavelength uniformity (wavelength uniformity) of wafer.
Summary of the invention
The present invention provides a kind of wafer carrier, can promote wavelength uniformity.
The present invention provides a kind of equipment of metal organic chemical vapor deposition, uses above-mentioned wafer carrier.
A kind of wafer carrier of the invention comprising axis of rotation, center clear area, wafer setting area and multiple wafers
Accommodation groove.Axis of rotation passes through the center of center clear area.Area is arranged around center clear area in wafer.Multiple wafer accommodation grooves are set
It is placed in wafer setting area.The diameter of each wafer accommodation groove is D, and the radius of center clear area is 0.5D~3D.Center is smooth
The surface in area is flat plane.
In one embodiment of this invention, the thickness of center clear area is greater than the depth of each wafer accommodation groove.
In one embodiment of this invention, the radius of center clear area is D~2D.
In one embodiment of this invention, the surface roughness of center clear area is thick less than the surface of the wafer accommodation groove
Rugosity.
A kind of wafer carrier of the invention comprising axis of rotation, the first virtual loop wire, adjacent to the first virtual loop wire
Second virtual loop wire and multiple wafer accommodation grooves.First virtual loop wire, the second virtual loop wire as the center of circle and have using axis of rotation
There is different radiuses.Multiple wafer accommodation grooves are intervally installed and are arranged on the first virtual loop wire and the second virtual loop wire,
Wherein the diameter of each wafer accommodation groove is D.It is located at the first virtual loop wire, wantonly two adjacent wafers on the second virtual loop wire
Accommodating the shortest distance between groove edge is 0.1D~5D.
In one embodiment of this invention, it is located at the first virtual loop wire, appoints two-phase vincial faces on the second virtual loop wire
The shortest distance between circle accommodating groove edge is 0.2D~3D.
In one embodiment of this invention, wafer carrier further includes center clear area and the wafer around center clear area
Area is set.Axis of rotation passes through the center of center clear area.First virtual loop wire and the second virtual loop wire are located at wafer setting area.
The radius of center clear area is 0.5D~3D.The surface of center clear area is flat plane.
In one embodiment of this invention, the thickness of center clear area is greater than the depth of each wafer accommodation groove.
In one embodiment of this invention, the surface roughness of center clear area is less than the rough surface of wafer accommodation groove
Degree.
A kind of equipment of metal organic chemical vapor deposition of the invention comprising cavity, rotating device, gas supply source with
And wafer carrier.Rotating device is located in cavity.Gas supply source is connected to cavity.Wafer carrier is located in cavity and is set to
On rotating device.Wafer carrier includes axis of rotation, the first virtual loop wire, the second virtual loop wire adjacent to the first virtual loop wire
And multiple wafer accommodation grooves.First virtual loop wire, the second virtual loop wire as the center of circle and have different radiuses using axis of rotation.
Multiple wafer accommodation grooves are spaced each other and are arranged on the first virtual loop wire and the second virtual loop wire.Each wafer accommodation groove it is straight
Diameter is D.The shortest distance being located between the first virtual loop wire, the wantonly two adjacent wafers accommodating groove edge on the second virtual loop wire
For 0.1D~5D.Gas is injected into cavity by gas supply source from above cavity.Wafer carrier revolves around it axle center rotation.
In one embodiment of this invention, it is located at the first virtual loop wire, appoints two-phase vincial faces on the second virtual loop wire
The shortest distance between circle accommodation groove is 0.2D~3D.
In one embodiment of this invention, wafer carrier further includes center clear area and wafer setting area.Axis of rotation
Across the center of center clear area.First virtual loop wire and the second virtual loop wire are located at wafer setting area.Multiple wafer accommodation grooves
It is set to surface.The radius of center clear area is 0.5D~3D, and the surface of center clear area is flat plane.
In one embodiment of this invention, the thickness of center clear area is greater than the depth of each wafer accommodation groove.
In one embodiment of this invention, the surface roughness of center clear area is less than the rough surface of wafer accommodation groove
Degree.
Based on above-mentioned, in the wafer carrier of the embodiment of the present invention, wafer accommodation groove is not provided with by center clear area
Design or wantonly two adjacent wafers by controlling on the first virtual loop wire and the second virtual loop wire accommodate between groove edge
The shortest distance, to improve because of interference in air flow caused by wafer hypotelorism.Therefore, the wafer carrier of the embodiment of the present invention can mention
Rise wavelength uniformity.In addition, the equipment of metal organic chemical vapor deposition using above-mentioned wafer carrier can produce epitaxy quality
Good wafer.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to cooperate attached drawing to make
Carefully it is described as follows.
Detailed description of the invention
Figure 1A is the upper schematic diagram according to the wafer carrier of the first embodiment of the present invention；
Figure 1B is the diagrammatic cross-section of Figure 1A vertical center line A-A '；
Fig. 2 and Fig. 3 is illustrated according to the upper view of the wafer carrier of the second embodiment of the present invention and 3rd embodiment respectively
Figure；
Fig. 4 is the schematic diagram according to the equipment of metal organic chemical vapor deposition of one embodiment of the invention.
Drawing reference numeral explanation:
10: equipment of metal organic chemical vapor deposition
12: cavity
14: gas supply source
16,100,200,300: wafer carrier
18: rotating device
CR: center clear area
D: diameter
DM: the shortest distance
DT: depth
F: gas
G: wafer accommodation groove
HT: distance
R: radius
R1: the first virtual loop wire
R2: the second virtual loop wire
RA: axis of rotation
SB: bottom surface
Cs: surface
Gs: bottom surface
TCR: thickness
W: wafer
WR: area is arranged in wafer
A-A ': hatching line
Specific embodiment
Technology contents, feature and effect for the present invention, in the detailed description of each embodiment of following cooperation attached drawing
It can clearly present.The direction term being previously mentioned in following embodiment, such as: "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing.Therefore, the direction term used and is not intended to limit the invention for illustrating.
Also, in following any embodiment, the same or similar element will use the same or similar label.
Wafer carrier in following any embodiment can be applied in equipment of metal organic chemical vapor deposition.In metal
During organic chemical vapor deposition, wafer carrier is to carry multiple wafers to be processed.Wafer carrier can be by any
The material that can be resistant to processing temperature generates.For example, the material of wafer carrier can be graphite or coated with graphite material, but not
As limit.
Figure 1A is the upper schematic diagram according to the wafer carrier of the first embodiment of the present invention.Figure 1B is Figure 1A vertical center line A-
The diagrammatic cross-section of A '.Please refer to Figure 1A and Figure 1B, the wafer carrier 100 of the first embodiment of the present invention include bottom surface SB,
Area WR and multiple wafer accommodation groove G is arranged in axis of rotation RA, center clear area CR, wafer.Axis of rotation RA is flat across center
(shape of the center clear area CR of the present embodiment is, for example, circle, and during the center of center clear area CR is at the center of main plot CR
The center of circle of heart clear area CR).Area WR is arranged around center clear area CR in wafer.Multiple wafer accommodation groove G are set to wafer setting
Area WR.The diameter of each wafer accommodation groove G is D, and the radius R of center clear area CR is 0.5D~3D, preferably, radius R is D
~2D.Wafer carrier 100 is less than the depth of each wafer accommodation groove G in wafer setting area WR in the thickness TCR of center clear area CR
Spend DT.Herein, the radius of center clear area CR defines the shortest distance for being axis of rotation RA to the edge wafer accommodation groove G.More in detail
It carefully says, in the wafer carrier 100 of first embodiment, (namely center is smooth in the range of axis of rotation RA distance radius R
In the range of area CR) there is no wafer accommodation groove G, also without height pattern, so that the surface C s presentation of center clear area CR is flat
Plane；And wafer setting area WR has the wafer accommodation groove G of indent, that is to say, that wafer carrier 100 is in center clear area CR
Surface C s to bottom surface SB distance (that is, thickness TCR) can greater than wafer accommodation groove G bottom surface Gs to bottom surface SB distance
HT。
Furthermore, multiple wafer accommodation groove G are located at the opposing face in wafer carrier 100 with bottom surface SB, that is,
It says, each of multiple wafer accommodation groove G is the groove for extending and being formed placement wafer towards the bottom surface SB of wafer carrier 100,
The bottom surface Gs of the surface C s and wafer accommodation groove G of center clear area CR be all opposite bottom surface SB formed and with bottom surface SB substantially
In parallel.However, multiple wafer accommodation groove G will not run through wafer carrier 100.That is, the difference of height of center clear area CR is remote
Less than the difference of height of wafer setting area WR.For example, the surface C s difference of height of center clear area CR falls in 0 to 0.1DT model
It in enclosing and is a continuous flat plane, but not limited to this.In the present embodiment, center clear area CR surface C s is flat
Face, that is to say, that the difference of height of surface C s is 0, and the depth DT that the difference of height of wafer setting area WR is wafer accommodation groove G.
In process, multiple wafers are separately positioned in multiple wafer accommodation groove G, and wafer carrier 100 is around rotation
Shaft heart RA rotation, makes multiple wafer centrals revolve around axis of rotation RA, and helps to keep the machined surface of each wafer uniform
It is exposed in gaseous environment.Each wafer accommodation groove G can be formed using patterned process, therefore the bottom surface Gs of wafer accommodation groove G
Or side surface (not labeled) can also be roughened by processing, and the surface roughness of bottom surface Gs or side surface is enabled to be greater than center clear area
The surface roughness of the surface C s of CR, so that multiple wafers are more solidly fixed to multiple wafer accommodation groove G in process
In, so that multiple wafers be avoided to separate when wafer carrier 100 is rotated with multiple wafer accommodation groove G.
It is not provided with the design of wafer accommodation groove G by center clear area CR, can avoid putting hypotelorism because of wafer and being produced
Raw interference in air flow, and then help to promote the uniformity for depositing to the film on wafer.
Fig. 2 and Fig. 3 is illustrated according to the upper view of the wafer carrier of the second embodiment of the present invention and 3rd embodiment respectively
Figure.
Referring to figure 2. and Fig. 3, the wafer carrier 200 of the second embodiment of the present invention and the wafer carrier of 3rd embodiment
300 also include axis of rotation RA and multiple wafer accommodation groove G.Multiple wafer accommodation groove G are alternatively arranged in the first virtual loop wire
On the virtual loop wire R2 of R1 and second.The first virtual virtual loop wire R2 of loop wire R1 and second is according to multiple wafer accommodation groove G
Arrangement mode define, and can not have to form entity mark in wafer carrier (such as wafer carrier 200 and wafer carrier 300)
Note.Furthermore, multiple wafer accommodation groove G are arranged at least one ring-like array, and multiple crystalline substances centered on axis of rotation RA
One of them of circle accommodation groove G can (but nonessential) center of wafer carrier is set.Virtual loop wire is along same ring-like battle array
The line of centres of multiple wafer accommodation groove G of column is formed.The case where a wafer accommodation groove G is only arranged in the center of wafer carrier
Under, the first virtual loop wire R1 is substantially overlapped with axis of rotation RA.However, being clearly to indicate the first virtual loop wire R1, in Fig. 3
The first virtual loop wire R1 be shown as and revolve around it axle center RA.
For second embodiment shown in Fig. 2, multiple wafer accommodation groove G are arranged in two ring-like arrays.Two ring-like
It array common center axis (i.e. axis of rotation RA) and is arranged outward by the center of wafer carrier 200.Two ring-like arrays distinguish boundary
Make the first virtual virtual loop wire R2 of loop wire R1 and second.For 3rd embodiment shown in Fig. 3, in addition to being located at wafer carrier
Except the wafer accommodation groove G at 300 centers, remaining multiple wafer accommodation groove G is arranged in a ring-like array.Positioned at wafer carrier
The wafer accommodation groove G at 300 centers defines the first virtual loop wire R1, and the ring-like array defines the second virtual loop wire R2.
In second embodiment and 3rd embodiment, the diameter of each wafer accommodation groove G is D, and is located at the first void
The shortest distance DM between the edge wantonly two adjacent wafers accommodation groove G on the virtual loop wire R2 of near-ring line R1 and second be greater than 0.1D and
Less than 5D.Shortest distance DM is preferably 0.2D~3D.By controlling the two neighboring wafer accommodation groove G on adjacent two virtual loop wire
Shortest distance DM, can improve because of interference in air flow caused by the two neighboring wafer hypotelorism on adjacent two virtual loop wire,
And it can avoid the problem too low because of production capacity caused by the two neighboring wafer hypertelorism on adjacent two virtual loop wire.Therefore,
Wafer carrier 200 and wafer carrier 300 are other than it can promote the uniformity for depositing to the film on wafer, additionally it is possible to take into account
Production capacity.
Although should be noted that second embodiment and 3rd embodiment all with two virtual loop wires for example, but virtual
The quantity of loop wire can change (wafer carrier may also comprise more than two virtual loop wires) without showing with Fig. 2 and Fig. 3 on demand
That shows is limited.
Fig. 4 is the schematic diagram according to the equipment of metal organic chemical vapor deposition of one embodiment of the invention.
Referring to figure 4., the equipment of metal organic chemical vapor deposition 10 of one embodiment of the invention includes cavity 12, gas
Source of supply 14 and wafer carrier 16.Gas supply source 14 is connected to cavity 12, and gas supply source 14 is provided needed for processing
Gas.Wafer carrier 16 is arranged in cavity 12.Wafer carrier 16 is using wafer carrier 100, Fig. 2 institute shown in Figure 1A and Figure 1B
The wafer carrier 200 or wafer carrier shown in Fig. 3 300 shown.
In process, multiple wafer W are separately positioned in multiple wafer accommodation groove G of wafer carrier 16.Multiple crystalline substances
Circle W can be the disc-shaped structure formed by sapphire, silicon carbide or other crystal substrates.Gas supply source 14 by gas F from
The top of cavity 12 is injected into cavity 12.Equipment of metal organic chemical vapor deposition 10 can further comprise rotating device 18,
The wherein axis of rotation RA of the shaft (not shown) alignment wafer carrier 16 of rotating device 18, and shaft is connected to rotary driving machine
Structure.The rotation of rotary drive mechanism drive shaft allows multiple wafer W so that wafer carrier 16 be driven to revolve around it axle center RA rotation
Axle center RA revolution is revolved around it, and helps to enable the machined surface S of each of multiple wafer W to be uniformly exposed to gaseous environment
In.In the present embodiment, multiple wafer W revolve only around axis of rotation RA, without the rotation in wafer accommodation groove G.Preferably
Ground, the machined surface S of wafer W does not protrude from wafer accommodation groove G, and the distance H of machined surface S to wafer accommodation groove G bottom surface Gs are little
In 0.7DT, that is to say, that 0.7DT≤H≤DT.If machined surface S protrudes from wafer accommodation groove G and is easy because rotary centrifugal force causes
Wafer W places unstable, and the uniformity of film deposition is impacted if too low.
Wafer carrier 16 is not provided with the design (crystalline substance as illustrated in figures 1A and ib of wafer accommodation groove G by center clear area
Circle load plate 100) or the shortest distance by controlling the two neighboring wafer accommodation groove G on adjacent two virtual loop wire is (as shown in Figure 2
Wafer carrier 200 or wafer carrier 300 shown in Fig. 3), with improve because of interference in air flow caused by wafer W hypotelorism.Cause
This, wafer carrier 16 can promote wavelength uniformity.Equipment of metal organic chemical vapor deposition 10 can due to using wafer carrier 16
Produce the wafer of epitaxy good quality.In an experimental example, equipment of metal organic chemical vapor deposition 10 can be by multiple wafers
The mean wavelength standard deviations of multiple wafers is reduced 27% by mean wavelength difference reduction 33%, and by multiple wafers each
Wafer in (within wafer) mean wavelength standard deviation reduction 41%.
According to different demands, equipment of metal organic chemical vapor deposition 10 can further comprise other elements or device.
For example, equipment of metal organic chemical vapor deposition 10 can further comprise the elevating mechanism that is connect with wafer carrier 16 (not
Display), to adjust wafer carrier 16 at a distance from air inlet.In addition, equipment of metal organic chemical vapor deposition 10 can be further
Including the air extractor (not shown) being connected to cavity 12, to have the function of exhaust.In addition, Metallo-Organic Chemical Vapor deposits
Equipment 10 can further comprise cooling device (not shown) and heat riser (not shown), with control temperature in cavity 12 or
The temperature of wafer carrier 16.
In conclusion being not provided with wafer accommodation groove by center clear area in the wafer carrier of the embodiment of the present invention
Design or the shortest distance by controlling the two neighboring wafer accommodation groove on adjacent two virtual loop wire, to improve because of wafer distance
Cross nearly generated interference in air flow.Therefore, the wafer carrier of the embodiment of the present invention can promote wavelength uniformity.In addition, using upper
The equipment of metal organic chemical vapor deposition for stating wafer carrier can produce the wafer of epitaxy good quality.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (14)
1. a kind of wafer carrier characterized by comprising
Axis of rotation；
Center clear area, the axis of rotation pass through the center of the center clear area；
Area is arranged in wafer, around the center clear area；And
Multiple wafer accommodation grooves are set to wafer setting area, and the diameter of each wafer accommodation groove is D, wherein the center
The radius of clear area is 0.5D~3D, and the surface of the center clear area is flat plane.
2. wafer carrier according to claim 1, which is characterized in that the thickness of the center clear area is greater than each wafer
The depth of accommodation groove.
3. wafer carrier according to claim 1, which is characterized in that the radius of the center clear area is D~2D.
4. wafer carrier according to claim 1, which is characterized in that the surface roughness of the center clear area is less than institute
State the surface roughness of wafer accommodation groove.
5. a kind of wafer carrier characterized by comprising
Axis of rotation；
First virtual loop wire；
Second virtual loop wire, adjacent to the described first virtual loop wire and the first virtual loop wire, the second virtual loop wire with
The axis of rotation is the center of circle and has different radiuses；And
Multiple wafer accommodation grooves are intervally installed and are arranged on the described first virtual loop wire and the described second virtual loop wire,
Wherein the diameter of each wafer accommodation groove is D, is located at the described first virtual loop wire, wantonly two on the second virtual loop wire
It is 0.1D~5D that adjacent wafers, which accommodate the shortest distance between groove edge,.
6. wafer carrier according to claim 5, which is characterized in that be located at the described first virtual loop wire, described
The shortest distance between wantonly two adjacent wafers accommodating groove edge on two virtual loop wires is 0.2D~3D.
7. wafer carrier according to claim 5, which is characterized in that further include center clear area and the circular center
Area is arranged in the wafer of clear area, wherein the axis of rotation passes through the center of the center clear area, the first virtual loop wire,
The second virtual loop wire and the wafer accommodation groove are located at wafer setting area, and the radius of the center clear area is 0.5D
~3D, and the surface of the center clear area is flat plane.
8. wafer carrier according to claim 6, which is characterized in that the thickness of the center clear area is greater than each wafer
The depth of accommodation groove.
9. wafer carrier according to claim 6, which is characterized in that the surface is thick on the surface of the center clear area
Rugosity is less than the surface roughness of the wafer accommodation groove.
10. a kind of equipment of metal organic chemical vapor deposition characterized by comprising
Cavity；
Rotating device is located in the cavity；
Gas supply source is connected to the cavity；And
Wafer carrier in the cavity and is set on the rotating device, and the wafer carrier includes axis of rotation,
One virtual loop wire, the second virtual loop wire and multiple wafer accommodation grooves adjacent to the described first virtual loop wire, described first is empty
Near-ring line, the second virtual loop wire as the center of circle and have different radiuses using the axis of rotation, the multiple wafer accommodating
Slot is spaced each other and is arranged on the described first virtual loop wire and the described second virtual loop wire, wherein each wafer accommodation groove is straight
Diameter is D, is located between the described first virtual loop wire, the wantonly two adjacent wafers accommodating groove edge on the second virtual loop wire
The shortest distance is 0.1D~5D,
Wherein gas is injected into the cavity by the gas supply source from above the cavity, and the wafer carrier is surround
The axis of rotation rotation.
11. equipment of metal organic chemical vapor deposition according to claim 10, which is characterized in that be located at described
The shortest distance between wantonly two adjacent wafers accommodation groove on one virtual loop wire, the second virtual loop wire is 0.2D~3D.
12. equipment of metal organic chemical vapor deposition according to claim 10, which is characterized in that the wafer carrier is also
Including center clear area and wafer, area is set, wherein the axis of rotation passes through the center of the center clear area, described the
One virtual loop wire, the second virtual loop wire and the wafer accommodation groove are located at wafer setting area, the center clear area
Radius be 0.5D~3D, and the surface of the center clear area is flat plane.
13. equipment of metal organic chemical vapor deposition according to claim 11, which is characterized in that the center clear area
Thickness be greater than each wafer accommodation groove depth.
14. equipment of metal organic chemical vapor deposition according to claim 11, which is characterized in that the center clear area
Surface roughness be less than the wafer accommodation groove surface roughness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711135837.7A CN109797377B (en) | 2017-11-16 | 2017-11-16 | Wafer carrying disc and metal organic chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711135837.7A CN109797377B (en) | 2017-11-16 | 2017-11-16 | Wafer carrying disc and metal organic chemical vapor deposition equipment |
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| Publication Number | Publication Date |
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| CN109797377A true CN109797377A (en) | 2019-05-24 |
| CN109797377B CN109797377B (en) | 2021-10-22 |
Family
ID=66555331
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711135837.7A Active CN109797377B (en) | 2017-11-16 | 2017-11-16 | Wafer carrying disc and metal organic chemical vapor deposition equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111490002A (en) * | 2020-04-21 | 2020-08-04 | 錼创显示科技股份有限公司 | Carrying disc structure |
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| CN101471280A (en) * | 2007-09-28 | 2009-07-01 | 因特瓦克公司 | Electrostatic chuck apparatus |
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| Publication number | Publication date |
|---|---|
| CN109797377B (en) | 2021-10-22 |
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