CN114641865A - 场效晶体管结构及其制造方法 - Google Patents
场效晶体管结构及其制造方法 Download PDFInfo
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- CN114641865A CN114641865A CN201980101744.3A CN201980101744A CN114641865A CN 114641865 A CN114641865 A CN 114641865A CN 201980101744 A CN201980101744 A CN 201980101744A CN 114641865 A CN114641865 A CN 114641865A
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- 230000005669 field effect Effects 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 19
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 147
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
一种场效晶体管结构(1)，包含基板(10)、源极汲极部(20)、介电层(DL)、闸极构成(30)、半导体层(40)。源极汲极部(20)形成于基板(10)上，并且源极汲极部(20)包含源极与汲极(210/220)；介电层(DL)与源极汲极部(20)形成于同一层并电性隔离源极与汲极(210/220)；闸极构成(30)与源极汲极部(20)位于不同层，闸极构成(30)包含闸极导电层(310)以及闸极绝缘层(320)，闸极导电层(310)形成于介电层上，且闸极绝缘层(320)形成于闸极导电层(310)上并包覆闸极导电层(310)。半导体层(40)，形成于闸极绝缘层(320)上并包覆闸极绝缘层(320)。闸极构成(30)介于介电层(DL)与半导体层(40)之间，源极汲极部(20)耦接于半导体层(40)，且通过施加电压于闸极导电层(310)以于半导体层(40)中形成通道。
Description
PCT国内申请，说明书已公开。
Claims (10)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/118936 WO2021092944A1 (zh) | 2019-11-15 | 2019-11-15 | 场效晶体管结构及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114641865A true CN114641865A (zh) | 2022-06-17 |
Family
ID=75911652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980101744.3A Pending CN114641865A (zh) | 2019-11-15 | 2019-11-15 | 场效晶体管结构及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114641865A (zh) |
| WO (1) | WO2021092944A1 (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06125081A (ja) * | 1992-10-13 | 1994-05-06 | Nec Corp | 電界効果トランジスタ及びその製造方法 |
| JP4207406B2 (ja) * | 2001-07-24 | 2009-01-14 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法、フォトセンサ及び読取装置 |
| US6965143B2 (en) * | 2003-10-10 | 2005-11-15 | Advanced Micro Devices, Inc. | Recess channel flash architecture for reduced short channel effect |
| CN106328707A (zh) * | 2015-07-06 | 2017-01-11 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其制作方法 |
| JP7060367B2 (ja) * | 2017-02-21 | 2022-04-26 | 日本放送協会 | 薄膜デバイス |
-
2019
- 2019-11-15 WO PCT/CN2019/118936 patent/WO2021092944A1/zh active Application Filing
- 2019-11-15 CN CN201980101744.3A patent/CN114641865A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021092944A1 (zh) | 2021-05-20 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20231205 Address after: 100094 802, building 2D, Zhongguancun integrated circuit design Park, yard 9, FengHao East Road, Haidian District, Beijing Applicant after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant before: Beijing times full core storage technology Co.,Ltd. Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. |