CN114637132A - Electro-optical modulator for network-on-chip interconnection - Google Patents
Electro-optical modulator for network-on-chip interconnection Download PDFInfo
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- CN114637132A CN114637132A CN202210292569.4A CN202210292569A CN114637132A CN 114637132 A CN114637132 A CN 114637132A CN 202210292569 A CN202210292569 A CN 202210292569A CN 114637132 A CN114637132 A CN 114637132A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 79
- 229910052710 silicon Inorganic materials 0.000 claims description 79
- 239000010703 silicon Substances 0.000 claims description 79
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 11
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 9
- 230000008033 biological extinction Effects 0.000 abstract description 4
- 239000011149 active material Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0113—Glass-based, e.g. silica-based, optical waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an electro-optical modulator for network-on-chip interconnection, which consists of a silicon dioxide substrate, an input waveguide, an output waveguide, a surface plasma modulator and an isolation layer. The optical signal is incident from the input waveguide, because the input waveguide is provided with the surface plasma modulation body with the ITO material, which can convert the optical signal, through the physical characteristics of the ITO material, voltage is applied to two ends of the first metal electrode layer and the second metal electrode layer of the surface plasma modulation body, so that the activity of the ITO material is changed, and the optical signal leaves the input waveguide and is coupled to the output waveguide next to the input waveguide. The invention introduces surface plasmon and active material ITO into the electro-optical modulator, reduces the size of the electro-optical modulator, improves the extinction ratio and the modulation rate, and reduces the communication delay.
Description
Technical Field
The invention relates to the technical field of electro-optical modulators, in particular to an electro-optical modulator for network-on-chip interconnection.
Background
One of the most important components in ORNoC (Optical Ring Network-on-Chi) data communication applications is an electro-optic modulator, which acts as a connecting bridge between an electronic platform and a photonic platform to convert electrical signals into Optical data streams. Conventional silicon-based Electro-optic modulators are made using Electro-optic (EO) materials that cause a change in the free carrier concentration when an electric field is applied, and thus the refractive index of the material. Conventional modulator materials can reach near zero states after experiencing significant optical losses when adjusting the applied gating potential, and the optical signal is confined within the modulator waveguide and experiences high losses. In addition, the traditional electro-optical modulator has larger device size reaching hundreds of microns, occupies larger on-chip space, and particularly, the current popular modulator based on the micro-ring resonator and the like are seriously influenced by temperature besides large device size, so that the stability of the modulator is greatly reduced. The modulation rate is an important index for determining the performance of the modulator, and the modulation rate of the current traditional photoelectric modulator is usually only dozens of GHz, and the modulation rate is relatively low. Conventional silicon-based electro-optic modulators have significant limitations.
Disclosure of Invention
The invention aims to solve the problems of large size, low extinction ratio and low modulation rate of the conventional silicon-based electro-optical modulator, and provides the electro-optical modulator for on-chip network interconnection.
In order to solve the problems, the invention is realized by the following technical scheme:
an electro-optical modulator for on-chip network interconnection is composed of a silicon dioxide substrate, an input waveguide, an output waveguide, a surface plasma modulator and an isolation layer; the input waveguide is in an L-like shape and consists of a second silicon-based straight waveguide, a third silicon-based arc waveguide and a fourth silicon-based straight waveguide; the tail end of the fourth silicon-based straight waveguide and the head end of the second silicon-based straight waveguide are respectively connected with two ends of the third silicon-based arc waveguide; the output waveguide is linear and consists of a first silicon-based straight waveguide; the isolation layer is linear and is composed of hafnium oxide; the surface plasma modulator is linear and is formed by superposing a first metal electrode layer, a first hafnium oxide layer, an indium tin oxide layer, a second hafnium oxide layer and a second metal electrode layer from bottom to top; the cross sections of the fourth silicon-based straight waveguide, the isolation layer and the surface plasma modulator are completely the same in shape and size; the input waveguide and the output waveguide are simultaneously arranged on the upper surface of the silicon dioxide substrate, and the second silicon-based straight waveguide of the input waveguide is parallel to the first silicon-based straight waveguide of the output waveguide; the head end of the fourth silicon-based straight waveguide forms the input end of the electro-optical modulator, the tail end of the first silicon-based straight waveguide, namely one end in the same direction as the tail end of the second silicon-based straight waveguide, forms the output end of the electro-optical modulator, and the tail end of the second silicon-based straight waveguide and the head end of the first silicon-based straight waveguide are suspended; the isolation layer is arranged on the fourth silicon-based straight waveguide, and the surface plasma modulator is arranged on the isolation layer; the first metal electrode layer and the second metal electrode layer of the surface plasma modulator are simultaneously connected with the positive electrode, and the indium tin oxide layer is connected with the negative electrode.
In the above scheme, the third silicon-based arc waveguide is a 90-degree perfect circular arc, and at this time, the fourth silicon-based straight waveguide is perpendicular to the second silicon-based straight waveguide and the first silicon-based straight waveguide.
In the above scheme, the height and width of the input waveguide and the output waveguide are the same.
In the above scheme, the length of the first silicon-based straight waveguide is greater than the length of the second silicon-based straight waveguide.
In the above aspect, the first metal electrode layer and the second metal electrode layer of the surface plasmon modulator are made of gold.
Compared with the prior art, the surface plasmon polariton and the active material ITO are introduced into the electro-optical modulator, so that the size of the electro-optical modulator is reduced, the extinction ratio and the modulation rate are improved, and the communication delay is reduced.
Drawings
Fig. 1 is a schematic perspective view of an electro-optic modulator for network-on-chip interconnection.
Figure 2 is a top view of an electro-optic modulator for network-on-chip interconnection.
FIG. 3 is a view of an input waveguide, an isolation layer, and a surface plasmon modulator at the input end of an electro-optic modulator.
FIG. 4 is a schematic diagram of the voltage applied to the surface plasmon modulator.
The reference numbers in the figures: 1. a silicon dioxide substrate; 2. an input waveguide; 3. an output waveguide; 4. a surface plasmon modulator; 5. an isolation layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to specific examples.
Referring to fig. 1-3, an electro-optic modulator for on-chip network interconnection is composed of a silicon dioxide substrate 1, an input waveguide 2, an output waveguide 3, and a surface plasmon modulator 4. The input waveguide 2 is in an L-like shape and is composed of a second silicon-based straight waveguide, a third silicon-based arc waveguide and a fourth silicon-based straight waveguide. The tail end of the fourth silicon-based straight waveguide and the head end of the second silicon-based straight waveguide are respectively connected to two ends of the third silicon-based arc waveguide. The output waveguide 3 is linear and is composed of a first silicon-based straight waveguide. The input waveguide 2 and the output waveguide 3 are simultaneously arranged on the upper surface of the silicon dioxide substrate 1, and the second silicon-based straight waveguide of the input waveguide 2 is parallel to the first silicon-based straight waveguide of the output waveguide 3. The head end of the fourth silicon-based straight waveguide forms the input end of the electro-optical modulator, the tail end of the first silicon-based straight waveguide, namely, the end in the same direction as the tail end of the second silicon-based straight waveguide, forms the output end of the electro-optical modulator, and the tail end of the second silicon-based straight waveguide and the head end of the first silicon-based straight waveguide are suspended. The isolation layer 5 is linear and is made of hafnium oxide. An isolation layer 5 is arranged on the fourth silicon-based straight waveguide. The surface plasma modulator 4 is linear and is formed by stacking a first metal electrode layer, a first hafnium oxide layer, an indium tin oxide layer, a second hafnium oxide layer, and a second metal electrode layer from bottom to top. The surface plasmon modulator 4 is disposed on the isolation layer 5.
In the present embodiment, the input waveguide 2 and the output waveguide 3 are two ridge type Si waveguides having a refractive index of 3.48, which are etched on a SiO2 base film having a refractive index of 1.44. The distance gap between the input waveguide 2 and the output waveguide 3 is 150nm, and the optical signal coupling is realized by the two coupling mode principles. The length lcoulting of the second silicon-based straight waveguide is 8500nm, and the length Lmodulate of the fourth silicon-based straight waveguide is 8500 nm. The third silicon-based arc waveguide is a perfect circular arc of 90 degrees, and the fourth silicon-based straight waveguide is perpendicular to the second silicon-based straight waveguide and the first silicon-based straight waveguide. To enable better coupling, the length of the first silicon-based straight waveguide is greater than the length of the second silicon-based straight waveguide. The second silicon-based straight waveguide, the third silicon-based arc waveguide, the fourth silicon-based straight waveguide and the first silicon-based straight waveguide have a width Wg of 400nm, and the second silicon-based straight waveguide, the third silicon-based arc waveguide, the fourth silicon-based straight waveguide and the first silicon-based straight waveguide have a height Hg of 180 nm. The cross-sectional shapes and sizes of the fourth silicon-based straight waveguide, the isolation layer 5 and the surface plasmon modulator 4 are completely the same. The first metal electrode layer and the second metal electrode layer of the surface plasmon modulator 4 are gold. The heights of the first metal electrode layer, the first hafnium oxide layer, the indium tin oxide layer, the second hafnium oxide layer and the second metal electrode layer are respectively HAu＝500nm、HHfO2＝15nm、HITO＝20nm、HHfO215nm and HAu 5 nm. The height of the isolation layer 5 is HHfO2＝15nm。
The first metal electrode layer and the second metal electrode layer of the surface plasmon modulator 4 are connected to the positive electrode at the same time, and the indium tin oxide layer is connected to the negative electrode. The surface plasma modulator 4 adopts two metal electrode layers, so that the electrode resistance can be reduced, and the purpose of improving the modulation rate is achieved. The positive ions of the two metal electrode layers are continuously converged, and the negative ions of the ITO in the middle are converged, so that a potential difference is formed, and the high-speed switching of the ON state and the OFF state of the switch can be realized. As shown in fig. 4. An optical signal is incident from an input waveguide 2, because the input waveguide 2 is provided with a surface plasma modulator 4 with an ITO material, which can convert the optical signal, through the physical characteristics of the ITO material, a voltage is applied across a first metal electrode layer and a second metal electrode layer of the surface plasma modulator 4, so that the activity of the ITO material is changed, and the optical signal leaves the input waveguide 2 and is coupled to an output waveguide 3 next to the input waveguide.
When the voltage is 2.35V and the incident wavelength is 1550nm, the size of the modulator is reduced, the coupling transmission distance is only 3890nm, the extinction ratio of the modulator is improved to 15.2dB, the coupling transmission distance is higher than that of a traditional modulator, the insertion loss of the modulator is also lower to 1.2dB, the modulator has lower power consumption which is only 5.7fj and lower than that of other traditional modulators, and the modulation rate of the modulator reaches 0.75Tbits/S, which is obviously superior to that of most modulators.
It should be noted that, although the above-mentioned embodiments of the present invention are illustrative, the present invention is not limited thereto, and thus the present invention is not limited to the above-mentioned embodiments. Other embodiments, which can be made by those skilled in the art in light of the teachings of the present invention, are considered to be within the scope of the present invention without departing from its principles.
Claims (5)
1. An electro-optical modulator for on-chip network interconnection is characterized by comprising a silicon dioxide substrate (1), an input waveguide (2), an output waveguide (3), a surface plasma modulator (4) and an isolation layer (5);
the input waveguide (2) is in an L-like shape and consists of a second silicon-based straight waveguide, a third silicon-based arc waveguide and a fourth silicon-based straight waveguide; the tail end of the fourth silicon-based straight waveguide and the head end of the second silicon-based straight waveguide are respectively connected to two ends of the third silicon-based arc waveguide; the output waveguide (3) is in a linear shape and consists of a first silicon-based straight waveguide; the isolation layer (5) is linear and is composed of hafnium oxide; the surface plasma modulator (4) is linear and is formed by superposing a first metal electrode layer, a first hafnium oxide layer, an indium tin oxide layer, a second hafnium oxide layer and a second metal electrode layer from bottom to top; the cross sections of the fourth silicon-based straight waveguide, the isolation layer (5) and the surface plasma modulator (4) are completely the same in shape and size;
the input waveguide (2) and the output waveguide (3) are simultaneously arranged on the upper surface of the silicon dioxide substrate (1), and the second silicon-based straight waveguide of the input waveguide (2) is parallel to the first silicon-based straight waveguide of the output waveguide (3); the head end of the fourth silicon-based straight waveguide forms the input end of the electro-optical modulator, the tail end of the first silicon-based straight waveguide, namely one end in the same direction as the tail end of the second silicon-based straight waveguide, forms the output end of the electro-optical modulator, and the tail end of the second silicon-based straight waveguide and the head end of the first silicon-based straight waveguide are suspended; the isolation layer (5) is arranged on the fourth silicon-based straight waveguide, and the surface plasma modulator (4) is arranged on the isolation layer (5); the first metal electrode layer and the second metal electrode layer of the surface plasma modulator (4) are simultaneously connected with the positive electrode, and the indium tin oxide layer is connected with the negative electrode.
2. The electro-optic modulator for on-chip network interconnection of claim 1, wherein the third silicon-based arcuate waveguide is a perfect circular arc of 90 degrees, and wherein the fourth silicon-based straight waveguide is orthogonal to the second silicon-based straight waveguide and the first silicon-based straight waveguide.
3. An electro-optical modulator for network-on-chip interconnection according to claim 1, characterized in that the input waveguide (2) and the output waveguide (3) have the same height and width.
4. The electro-optic modulator of claim 1 in which the first silicon-based straight waveguide has a length greater than a length of the second silicon-based straight waveguide.
5. An electro-optical modulator for on-chip network interconnection according to claim 1, characterized in that the first metal electrode layer and the second metal electrode layer of the surface plasmon modulator (4) are made of gold.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210292569.4A CN114637132A (en) | 2022-03-23 | 2022-03-23 | Electro-optical modulator for network-on-chip interconnection |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210292569.4A CN114637132A (en) | 2022-03-23 | 2022-03-23 | Electro-optical modulator for network-on-chip interconnection |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016015303A1 (en) * | 2014-07-31 | 2016-02-04 | 华为技术有限公司 | Germanium-silicon electroabsorption modulator |
| CN109579816A (en) * | 2018-12-12 | 2019-04-05 | 天津津航技术物理研究所 | Hybrid integrated optical fibre gyro optical chip |
| CN111240051A (en) * | 2020-03-06 | 2020-06-05 | 桂林电子科技大学 | Directional coupling type electro-optical modulator based on surface plasma |
| CN113238397A (en) * | 2021-05-17 | 2021-08-10 | 桂林电子科技大学 | Optical switch for network-on-chip interconnection |
-
2022
- 2022-03-23 CN CN202210292569.4A patent/CN114637132A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016015303A1 (en) * | 2014-07-31 | 2016-02-04 | 华为技术有限公司 | Germanium-silicon electroabsorption modulator |
| CN109579816A (en) * | 2018-12-12 | 2019-04-05 | 天津津航技术物理研究所 | Hybrid integrated optical fibre gyro optical chip |
| CN111240051A (en) * | 2020-03-06 | 2020-06-05 | 桂林电子科技大学 | Directional coupling type electro-optical modulator based on surface plasma |
| CN113238397A (en) * | 2021-05-17 | 2021-08-10 | 桂林电子科技大学 | Optical switch for network-on-chip interconnection |
Non-Patent Citations (1)
| Title |
|---|
| 靳琳;宋世超;文龙;孙云飞;: "基于表面等离激元的偏振不灵敏型电光调制器的理论研究", 光电工程, no. 11, 13 November 2018 (2018-11-13) * |
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