CN114628511A - High electron mobility transistor and manufacturing method thereof - Google Patents

High electron mobility transistor and manufacturing method thereof Download PDF

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Publication number
CN114628511A
CN114628511A CN202011457077.3A CN202011457077A CN114628511A CN 114628511 A CN114628511 A CN 114628511A CN 202011457077 A CN202011457077 A CN 202011457077A CN 114628511 A CN114628511 A CN 114628511A
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compound layer
layer
forming
drain electrode
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杨柏宇
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United Microelectronics Corp
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United Microelectronics Corp
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Priority to CN202011457077.3A priority Critical patent/CN114628511A/en
Priority to US17/152,742 priority patent/US11688801B2/en
Publication of CN114628511A publication Critical patent/CN114628511A/en
Priority to US17/988,720 priority patent/US11935948B2/en
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Abstract

A high electron mobility transistor and a method of fabricating the same are disclosed, wherein the high electron mobility transistor includes a first III-V compound layer, a second III-V compound layer disposed on the first III-V compound layer, the second III-V compound layer having a composition different from that of the first III-V compound layer, a third III-V compound layer disposed on the second III-V compound layer, wherein the first III-V compound layer and the third III-V compound layer are composed of the same III-V and V-V elements, the third III-V compound layer includes a body and a plurality of finger portions, wherein the finger portions are connected to the body, the finger portions are parallel to each other and do not contact each other, a source electrode disposed at one side of the body and contacting the first III-V compound layer, a drain electrode is disposed on the other side of the body and contacts the first III-V compound layer, and a gate electrode is disposed directly above the body.

Description

High electron mobility transistor and manufacturing method thereof
Technical Field
The present invention relates to a structure of a high electron mobility transistor and a method for fabricating the same, and more particularly, to a structure of a high electron mobility transistor having a gate extending out of a finger portion and a method for fabricating the same.
Background
The III-V semiconductor compounds are useful for forming many kinds of integrated circuit devices due to their semiconductor characteristics, such as high power field effect transistors, high frequency transistors, or High Electron Mobility Transistors (HEMTs). In a high electron mobility transistor, two semiconductor materials with different band-gaps (band-gap) are combined to form a heterojunction (heterojunction) at the junction (junction) to provide a channel for carriers. In recent years, gallium nitride series materials are suitable for high power and high frequency products due to their characteristics of wide energy gap and high saturation rate. Gan-based hemts generate two-dimensional electron gas (2 DEG) due to the piezoelectric effect of the material itself, and have higher electron velocity and density compared to conventional hemts, thereby increasing the switching speed.
In order to increase the breakdown voltage of the hemt, a lot of research has been conducted to find that the breakdown of the hemt mainly occurs under the sidewall of the gate close to the drain, so that it is required to further improve the breakdown voltage of the hemt in order to increase the operation performance of the hemt.
Disclosure of Invention
In view of the above, the present invention provides a high electron mobility transistor having a finger-shaped gate for improving the breakdown voltage of the high electron mobility transistor.
According to a preferred embodiment of the present invention, a high electron mobility transistor comprises:
a first III-V compound layer, a second III-V compound layer disposed on the first III-V compound layer, the second III-V compound layer having a different composition from the first III-V compound layer, a third III-V compound layer disposed on the second III-V compound layer, the third III-V compound layer including a body and a plurality of finger portions, wherein the finger portions are connected to the body, the finger portions are parallel to each other and do not contact each other, a source electrode disposed on one side of the body and contacting the first III-V compound layer, a drain electrode disposed on the other side of the body and contacting the first III-V compound layer, and a gate electrode disposed directly above the body.
In accordance with another preferred embodiment of the present invention, a method of fabricating a high electron mobility transistor includes forming a first III-V compound layer and a second III-V compound layer, the second III-V compound layer being disposed on the first III-V compound layer, the second III-V compound layer having a different composition than the first III-V compound layer, then forming a third III-V compound layer on the second III-V compound layer, wherein the third III-V compound layer includes a body and a plurality of fingers, each finger being connected to the body, and the fingers are parallel to each other and do not contact each other, and finally a source electrode, a drain electrode and a gate electrode are formed, wherein the source electrode is disposed at one side of the body, the drain electrode is disposed at the other side of the body, and the gate electrode is disposed directly above the body.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below. However, the following preferred embodiments and the accompanying drawings are only for reference and illustration purposes and are not intended to limit the present invention.
Drawings
Fig. 1 is a three-dimensional schematic diagram of a high electron mobility transistor according to a first preferred embodiment of the invention;
fig. 2 is a top view of an electron mobility transistor in a first preferred embodiment of the present invention;
fig. 3 is a variation of a top view of an electron mobility transistor according to a first preferred embodiment of the present invention;
fig. 4 is another variation of the top view of the electron mobility transistor according to the first preferred embodiment of the present invention;
fig. 5 is a three-dimensional schematic diagram of a high electron mobility transistor according to a second preferred embodiment of the invention;
fig. 6 is a top view of an electron mobility transistor in a second preferred embodiment of the present invention;
fig. 7 is a variation of a top view of an electron mobility transistor according to a second preferred embodiment of the present invention;
fig. 8 is another variation of the top view of the electron mobility transistor according to the second preferred embodiment of the present invention;
FIGS. 9-10 are schematic diagrams illustrating a method of fabricating a high electron mobility transistor having a body and fingers with P-type dopants according to a preferred embodiment of the present invention;
FIGS. 11-12 are diagrams illustrating a method of fabricating a high electron mobility transistor with a body and fingers both having P-type dopants according to another preferred embodiment of the present invention;
fig. 13 to 14 are schematic diagrams illustrating a method for fabricating a high electron mobility transistor having a body and a finger portion with a P-type dopant compound layer and an undoped compound layer, respectively, according to a preferred embodiment of the present invention;
fig. 15 to 16 are schematic diagrams illustrating a method for fabricating a high electron mobility transistor having a body and a finger portion with a P-type dopant compound layer and an undoped compound layer, respectively, according to another preferred embodiment of the present invention.
Description of the main elements
10 base
12 first III-V group compound layer
14 second III-V Compound layer
16a third III-V compound layer
16a body
16b finger-like part
16c finger-like part
18 source electrode
20 drain electrode
22 gate electrode
24 two-dimensional electron gas
26 first protective layer
28 first opening
30 second opening
32 second protective layer
36 third opening
38 mask layer
40 undoped III-V compound layer
42 protective layer
44 first opening
46 second opening
100 high electron mobility transistor
200 high electron mobility transistor
300 high electron mobility transistor
400 high electron mobility transistor
A is corner
Detailed Description
Fig. 1 is a three-dimensional schematic diagram of a high electron mobility transistor according to a first preferred embodiment of the invention. Fig. 2 is a top view of the electron mobility transistor in the first preferred embodiment of the present invention, in which the structure of the third III-V compound layer is shown for clarity, and thus the source, drain and gate electrodes are omitted.
Referring to fig. 1 and 2, a high electron mobility transistor 100 includes a substrate 10, a first III-V compound layer 12 overlying the substrate 10, a second III-V compound layer 14 disposed on the first III-V compound layer 12, the second III-V compound layer 14 having a composition different from that of the first III-V compound layer 12, and a third III-V compound layer 16 disposed on the second III-V compound layer 14, wherein the first III-V compound layer 12 and the third III-V compound layer 16 are composed of the same group III and group V elements or different group III and group V elements, the third III-V compound layer 16 includes a body 16a and a plurality of finger portions 16b, wherein each finger portion 16b is connected to the body 16a, the fingers 16b are parallel to each other and do not touch each other, and the body 16a and the fingers 16b are separated by a dotted line in fig. 2, but the dotted line is not provided in an actual element. A source electrode 18 is disposed on one side of the body 16a and contacts the first III-V compound layer 12, a drain electrode 20 is disposed on the other side of the body 16a and contacts the first III-V compound layer 12, and a gate electrode 22 is disposed directly above the body 16 a. The body 16a serves as a gate of the high electron mobility transistor 100.
According to a preferred embodiment of the present invention, the first and third III- V compound layers 12 and 16 may be gallium nitride or aluminum gallium nitride, but the first III-V compound layer 12 is an undoped III-V compound layer and the third III-V compound layer 16 is a P-type III-V compound layer, for example, the first III-V compound layer 12 may be undoped gallium nitride, the third III-V compound layer 16 may be P-type gallium nitride, and further the third III-V compound layer 16 has no N-type dopants, i.e., no N-type dopants in the body 16a and the finger portions 16 b. The second III-V compound layer 14 comprises aluminum gallium nitride, aluminum indium gallium nitride or aluminum nitride, and in this embodiment the second III-V compound layer 14 is undoped aluminum gallium nitride. The source electrode 18, the drain electrode 20, and the gate electrode 22 may each comprise gold, tungsten, cobalt, nickel, titanium, molybdenum, copper, aluminum, tantalum, palladium, platinum, compounds, composite layers, or alloys of the foregoing, copper, aluminum, or tungsten. The substrate 10 includes a silicon substrate, a germanium substrate, a gallium arsenide substrate, a silicon germanium substrate, an indium phosphide substrate, a gallium nitride substrate, a silicon carbide substrate, or a silicon-on-insulator substrate. The high electron mobility transistor 100 is a normally-off (normal-off) type transistor, and when the high electron mobility transistor 100 is turned on, a two-dimensional electron gas 24 is formed in the interface of the first III-V compound layer 12 and the second III-V compound layer 14.
Further, each finger 16b of the third III-V compound layer 16 is disposed between the body 16a and the drain electrode 20, and the finger 16b extends in a direction away from the body 16a, so that the third III-V compound layer 16 constitutes a comb-like profile. Although the number of the fingers 16b is 4 in the first preferred embodiment, the number of the fingers 16b can be adjusted according to the product requirements. It is worth noting that: the electric field at the interface of the first III-V compound layer 12 and the second III-V compound layer 14 covered by the plurality of finger portions 16b becomes average. The electric field flattening may improve the voltage endurance of the hemt 100, i.e., the breakdown voltage of the hemt 100 may increase. On the other hand, if the third III-V compound layer 16 has no finger portion 16b but only the body 16a, a large electric field is generated below the corner of the body 16a, and particularly, a large amount of charges are accumulated near the corner a of the drain electrode 20, so that a leakage current is easily generated, i.e., the breakdown voltage of the electron mobility transistor 100 is low.
Furthermore, the reason why the present invention makes the fingers 16b extending from the body 16a unconnected to each other in particular is that: since the gaps are left between the fingers 16b, a part of the interface between the first III-V compound layer 12 and the second III-V compound layer 14 from just below the body 16a to the drain electrode 20 is still not covered by the fingers 16b, and thus the two-dimensional electron gas 24 can be generated, and when the high electron mobility transistor 100 is turned on, the two-dimensional electron gas 24 can flow under the fingers 16 b. On the contrary, if the continuous third III-V compound layer 16 is completely covered between the body 16a and the drain electrode 20, the two-dimensional electron gas 24 is not generated at all between the interface between the first III-V compound layer 12 and the second III-V compound layer 14 between the body 16a and the drain electrode 20, and when the hemt 100 is turned on, a larger voltage is required to allow the electrons to pass through, that is, the on-resistance (Ron) of the hemt in which the body 16a is covered by the continuous third III-V compound layer 16 and the drain electrode 20 is larger than the on-resistance (Ron) of the hemt 100 in which the body 16a is covered by the finger portion 16b and the drain electrode 20.
Fig. 3 is a variation of a top view of an electron mobility transistor according to a first preferred embodiment of the present invention, and fig. 4 is another variation of a top view of an electron mobility transistor according to a first preferred embodiment of the present invention, in which a source electrode, a drain electrode, and a gate electrode are omitted for clarity of showing the structure of the third III-V compound layer. Elements having the same function in fig. 3 and 4 will use the same reference numerals as in the first preferred embodiment.
As mentioned above, the third III-V compound layer 16 is composed of a body 16a and a plurality of fingers 16b, and the fingers 16b are illustrated as extending toward the drain electrode 20 in fig. 2, i.e., the fingers 16b are only between the body 16a and the drain electrode 20, but not limited thereto. As shown in fig. 3, the finger 16a extends toward the source electrode 18 and is only between the body 16a and the source electrode 18. As shown in fig. 4, the finger 18b may extend toward both the drain electrode 20 and the source electrode 18.
Fig. 5 is a three-dimensional schematic diagram of a high electron mobility transistor according to a second preferred embodiment of the invention. Fig. 6 is a top view of the electron mobility transistor in the second preferred embodiment of the present invention, in which the structure of the third III-V compound layer is shown for clarity, and thus the source, drain and gate electrodes are omitted. Elements having the same function in fig. 5 and 6 will use the same reference numerals as in the first preferred embodiment.
The difference between the first and second preferred embodiments is that the third III-V compound layer 16 in the second preferred embodiment is composed of a III-V compound layer with a P-type dopant and an undoped III-V compound layer, and in detail the body 16a in the second preferred embodiment is composed of a III-V compound layer with a P-type dopant, and the finger portion 16c is composed of an undoped III-V compound layer, and the III-V compound layers of the body 16a and the finger portion 16c are composed of the same III-V and V-group elements, for example, the body 16a may be P-type gallium nitride and the finger portion 16c may be undoped gallium nitride, and neither the body 16a nor the finger portion 16b have an N-type dopant therein. Otherwise, the positions of other elements in the second preferred embodiment are the same as those in the first preferred embodiment, and are not described herein again. In addition, whether the fingers 16b/16c are formed of a P-type dopant III-V compound layer or an undoped III-V compound layer, the difference to the hemt 100/200 is only that when the fingers 16b are P-type dopant III-V compound layers, the two-dimensional electron gas 24 is formed with a density slightly higher than that when the fingers 16c are undoped III-V compound layers. However, the high electron mobility transistor 100/200, whether the finger 16b/16c is formed of a III-V compound layer with a P-type dopant or an undoped III-V compound layer, has the characteristics of high voltage endurance and low on-resistance.
Fig. 7 is a variation of the top view of the electron mobility transistor according to the second preferred embodiment of the present invention, and fig. 8 is another variation of the top view of the electron mobility transistor according to the second preferred embodiment of the present invention, in which the source, drain, and gate electrodes are omitted in fig. 7 and 8 for clarity of showing the structure of the third III-V compound layer, and the same reference numerals will be used for the elements having the same functions in fig. 7 and 8 as in the first preferred embodiment.
In fig. 6, the finger portion 16c is extended toward the drain electrode 20, that is, the finger portion 16c is only between the body 16a and the drain electrode 20, but is not limited thereto. As shown in fig. 7, the finger 16c extends toward the source electrode 18 and is only between the body 16a and the source electrode 18. The finger 16c may extend toward both the drain electrode 20 and the source electrode 18 as shown in fig. 8.
Several methods for fabricating the high electron mobility transistor of the present invention will be described as examples, but the high electron mobility transistor of the present invention is not limited to these fabrication methods. Fig. 9 to 10 illustrate a method of fabricating a high electron mobility transistor having P-type dopants for both body and finger portions according to a preferred embodiment of the present invention, and fig. 11 to 12 illustrate a method of fabricating a high electron mobility transistor having P-type dopants for both body and finger portions according to another preferred embodiment of the present invention, wherein the same reference numerals are used for the same elements.
As shown in fig. 9, a substrate 10 is provided, a first III-V compound layer 12 and a second III-V compound layer 14 are sequentially formed to cover the substrate 10, and a third III-V compound layer 16 is formed on the second III-V compound layer 14. According to a preferred embodiment of the invention, the first and third III-V compound layers 12, 16 are both gallium nitride, whereas the first III-V compound layer 12 is undoped gallium nitride, the third III-V compound layer 16 is P-type gallium nitride and the second III-V compound layer 14 is undoped aluminum gallium nitride.
As shown in fig. 10, a photolithography-etching process is performed to pattern the third III-V compound layer 16 such that the third III-V compound layer 16 forms a body 16a and a plurality of fingers 16b, the fingers 16b extending from the body 16 a. Then, as shown in fig. 1, the source electrode 18 and the drain electrode 20 are simultaneously formed on both sides of the third III-V compound layer 16, the source electrode 18 and the drain electrode 20 contact the first III-V compound layer 12 and the second III-V compound layer 14, and then a gate electrode 22 contacts the body 16 a. So far the present invention of the hemt 100 has been completed.
According to another manufacturing method of the present invention, as shown in FIG. 11, a substrate 10 is provided, and then a first III-V compound layer 12 and a second III-V compound layer 14 are sequentially formed to cover the substrate 10. Then, a first passivation layer 26 is formed to cover the second III-V compound layer, the first passivation layer 26 is patterned, a first opening 28 is etched in the first passivation layer 26 to serve as a predetermined position for the third III-V compound layer 16, and then the third III-V compound layer 16 is formed to fill the first opening 28, wherein the third III-V compound layer 16 forms a body 16a and a finger portion 16b in accordance with the shape of the first opening 28.
The first protective layer 26 is etched again as shown in fig. 12, two second openings 30 are formed on the first protective layer to expose the first III-V compound layer 12, the two second openings 30 are respectively used as predetermined positions for subsequently forming the source electrode 18 and the drain electrode 20, and then the source electrode 18 and the drain electrode 20 are formed to fill the second openings 30. Then, a second passivation layer 32 is formed to cover the first passivation layer 26, the third III-V compound layer 16, the source electrode 18 and the drain electrode 20, then the second passivation layer 32 is etched to form a plurality of third openings 36 on the second passivation layer, the body 16a, the source electrode 18 and the drain electrode 20 are exposed from the third openings 36, respectively, and then the gate electrode 22 is formed to fill the third openings 36, so that the gate electrode 22 contacts the body 16 a. The hemt 300 of the present invention has been completed so far. The first protective layer 26 and the second protective layer 32 may be silicon nitride or aluminum nitride.
Fig. 13 to 14 illustrate a method of fabricating a high electron mobility transistor having a body and a finger portion with a P-type dopant compound layer and an undoped compound layer, respectively, according to a preferred embodiment of the present invention, and fig. 15 to 16 illustrate a method of fabricating a high electron mobility transistor having a body and a finger portion with a P-type dopant compound layer and an undoped compound layer, respectively, according to another preferred embodiment of the present invention, wherein the same reference numerals as those used in the first preferred embodiment are used for elements having the same functions.
As shown in FIG. 13, a substrate 10 is provided, and then a first III-V compound layer 12, a second III-V compound layer 14 and a III-V compound layer with P-type dopant are sequentially formed to cover the substrate 10. According to a preferred embodiment of the present invention, the first III-V compound layer 12 is undoped gallium nitride, the III-V compound layer with a P-type dopant is P-type gallium nitride, and the second III-V compound layer 14 is undoped aluminum gallium nitride. Next, a mask layer 38 is formed to cover the P-type dopant III-V compound layer, the mask layer 38 is patterned, and the P-type dopant III-V compound layer is patterned using the mask layer 38 as a mask to form a body 16 a. As shown in fig. 14, an undoped III-V compound layer 40 is formed overlying the second III-V compound layer. After removing the mask layer 38, the undoped group III-V compound layer 40 is patterned to form a plurality of finger portions 16c, as shown in fig. 5, where the undoped group III-V compound layer 40 and the group III-V compound layer having the P-type dopant constitute the third group III-V compound layer 16. A source electrode 18, a drain electrode 20, and a gate electrode 22 are then formed, wherein the source electrode 18 and the drain electrode 20 contact the first III-V compound layer 12, and the gate electrode 22 contacts the body 16 a.
According to another manufacturing method of the present invention, after the body 16a is formed in fig. 13, as shown in fig. 15, the mask layer 38 is removed, a passivation layer 42 is formed to cover the body 16a and the second III-V compound layer 14, the passivation layer 42 is patterned to form a first opening 44 on the passivation layer 42 to define a predetermined position of the finger portion 16c, and the second III-V compound layer 14 is exposed from the first opening 44, and then an undoped III-V compound layer is formed to fill the first opening 44 to form the finger portion 16 c. As shown in fig. 16, the passivation layer 42 is patterned to form a plurality of second openings 46 on the passivation layer 42 to define predetermined positions of the source electrode 18, the drain electrode 20 and the gate electrode 22, respectively, and then the source electrode 18, the drain electrode 20 and the gate electrode 22 are formed to fill the second openings 46, respectively, wherein the source electrode 18 and the drain electrode 20 contact the first III-V compound layer 12 and the gate electrode 22 contacts the body 16 a. So far the high electron mobility transistor 400 of the present invention has been completed.
The invention particularly extends a body of the normally-off type high electron mobility transistor to a plurality of finger parts, so that the electric field of the interface of the first III-V compound layer and the second III-V compound layer covered by the finger parts becomes average, and the voltage endurance capability of the high electron mobility transistor is improved.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in the claims of the present invention should be covered by the present invention.

Claims (20)

1. A high electron mobility transistor, comprising:
a first III-V compound layer;
a second III-V compound layer disposed on the first III-V compound layer, the second III-V compound layer having a different composition than the first III-V compound layer;
a third III-V compound layer disposed on the second III-V compound layer, the third III-V compound layer including a body and a plurality of finger portions, wherein the plurality of finger portions are connected to the body, and the finger portions are parallel to each other and do not contact each other;
a source electrode disposed at one side of the body and contacting the first III-V compound layer;
a drain electrode disposed at the other side of the body and contacting the first III-V compound layer; and
and a gate electrode disposed directly above the body.
2. The hemt of claim 1, wherein the body and the fingers are the same III-V layer with P-type dopants.
3. The hemt of claim 1, wherein the body is a III-V layer with P-type dopants and the fingers are undoped III-V layers.
4. The hemt of claim 1, wherein the first group III-V compound layer comprises gallium nitride or aluminum gallium nitride, the third group III-V compound layer comprises gallium nitride or aluminum gallium nitride, and the second group III-V compound layer comprises aluminum gallium nitride, aluminum indium gallium nitride or aluminum nitride.
5. The hemt of claim 1, wherein the fingers are disposed only between the body and the drain electrode.
6. The hemt of claim 1, wherein the fingers are disposed only between the body and the source electrode.
7. The hemt of claim 1, wherein the plurality of fingers are disposed between the body and the drain electrode and between the body and the source electrode.
8. The hemt of claim 1, wherein the plurality of fingers are devoid of N-type dopants.
9. The hemt of claim 1, wherein each of the fingers extends away from the body.
10. A method for fabricating a high electron mobility transistor includes:
forming a first III-V compound layer and a second III-V compound layer, the second III-V compound layer being disposed on the first III-V compound layer, the second III-V compound layer being different in composition from the first III-V compound layer;
forming a third III-V compound layer disposed on the second III-V compound layer, wherein the third III-V compound layer includes a body and a plurality of finger portions, the plurality of finger portions are connected to the body, and the finger portions are parallel to each other and do not contact each other; and
forming a source electrode, a drain electrode and a gate electrode, wherein the source electrode is disposed at one side of the body, the drain electrode is disposed at the other side of the body and the gate electrode is disposed directly above the body.
11. The method according to claim 10, wherein the third III-V compound layer is formed by a method comprising:
forming a III-V compound layer with a P-type dopant;
patterning the III-V compound layer with the P-type dopant to form the body and the plurality of finger portions; and
after patterning the III-V compound layer having the P-type dopant, the source electrode, the drain electrode, and the gate electrode are formed, wherein the source electrode and the drain electrode contact the first III-V compound layer, and the gate electrode contacts the body.
12. The method according to claim 10, wherein the third III-V compound layer is formed by a method comprising:
forming a first protective layer covering the second III-V compound layer before forming the third III-V compound layer;
patterning the first passivation layer to form a first opening on the first passivation layer to define predetermined locations of the body and the plurality of fingers, and the second III-V compound layer is exposed through the first opening;
forming a III-V compound layer with P-type dopant to fill the first opening to form the body and the plurality of finger portions;
after forming the body and the plurality of finger portions, patterning the first protection layer to form two second openings on the first protection layer to define predetermined positions of the source electrode and the drain electrode, respectively;
forming the source electrode and the drain electrode to fill each of the second openings, wherein the source electrode and the drain electrode contact the first III-V compound layer;
forming a second passivation layer covering the first passivation layer, the body, the plurality of fingers, the source electrode and the drain electrode;
patterning the second passivation layer to form three third openings on the second passivation layer, each of the third openings defining a predetermined position of the gate electrode and exposing the source electrode and the drain electrode; and
forming the gate electrode to fill one of the plurality of third openings, and the gate electrode contacts the body.
13. The method of claim 10, wherein the third III-V compound layer is formed by a method comprising:
forming a III-V compound layer with a P-type dopant;
patterning the III-V compound layer with the P-type dopant to form the body;
after forming the body, forming an undoped III-V compound layer overlying the second III-V compound layer;
patterning the undoped III-V compound layer to form the plurality of finger portions;
after forming the body and the plurality of fingers, forming the source electrode, the drain electrode, and the gate electrode, wherein the source electrode and the drain electrode contact the first III-V compound layer, and the gate electrode contacts the body.
14. The method according to claim 10, wherein the third III-V compound layer is formed by a method comprising:
forming a III-V compound layer with a P-type dopant;
patterning the III-V compound layer with the P-type dopant to form the body;
forming a protective layer covering the body and the second III-V compound layer;
patterning the protective layer to form a first opening on the protective layer to define predetermined positions of the plurality of fingers, and exposing the second III-V compound layer from the first opening;
forming an undoped III-V compound layer to fill the first opening to form the plurality of finger portions;
after forming the plurality of finger portions, patterning the passivation layer to form a plurality of second openings on the passivation layer to define predetermined positions of the source electrode, the drain electrode and the gate electrode, respectively; and
forming the source electrode, the drain electrode and the gate electrode to fill each of the second openings, wherein the source electrode and the drain electrode contact the first III-V compound layer, and the gate electrode contacts the body.
15. The method of claim 10, wherein the first and third III-V compound layers are gan, and the second III-V compound layer comprises algan, ain, alingan, or aln.
16. The method of claim 10, wherein the fingers are disposed only between the body and the drain electrode.
17. The method of claim 10, wherein the fingers are disposed only between the body and the source electrode.
18. The method of claim 10, wherein the fingers are disposed between the body and the source electrode and between the body and the drain electrode.
19. The method of claim 10, wherein the plurality of fingers are devoid of N-type dopants.
20. The method of claim 10, wherein each finger extends away from the body.
CN202011457077.3A 2020-12-11 2020-12-11 High electron mobility transistor and manufacturing method thereof Pending CN114628511A (en)

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