CN114628484A - High-brightness full-color micro-display structure - Google Patents
High-brightness full-color micro-display structure Download PDFInfo
- Publication number
- CN114628484A CN114628484A CN202210509661.1A CN202210509661A CN114628484A CN 114628484 A CN114628484 A CN 114628484A CN 202210509661 A CN202210509661 A CN 202210509661A CN 114628484 A CN114628484 A CN 114628484A
- Authority
- CN
- China
- Prior art keywords
- layer
- micro led
- oled
- emitting device
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Abstract
A high-brightness full-color micro-display structure comprises a blue light pixel based on micro LED luminescence, a red pixel and a green pixel based on OLED luminescence, and further comprises a micro LED anode, a micro LED luminescent device, a micro LED cathode, an inorganic medium layer, an OLED anode, an OLED organic luminescent device, an OLED device packaging layer, a color filter layer and the like. According to the invention, the micro LED light emission and the OLED light emission are combined, the micro LED light emission is used for forming the blue pixel, the light emitting brightness and the yield are ensured, the OLED light emission is used for forming the green and red pixels, the light emitting brightness and the service life can be greatly improved relative to the white light, and the color micro display formed in such a way can easily meet the AR/VR application requirements.
Description
Technical Field
The invention relates to the technical field of display structures, in particular to a micro-display structure combining inorganic light emission and organic light emission, and specifically relates to a high-brightness full-color micro-display structure.
Background
AR/VR has a wide range of applications requiring high brightness, long life, high resolution, etc. for color microdisplay devices. Currently, micro leds are considered to be the most promising display technology, which is far superior to OLED and LCD technologies in terms of brightness, reaction speed, lifetime, operating temperature, etc. However, the colorization technology of the micro led is not mature, and a massive transfer technology, a wafer-level bonding technology, a selective growth technology and the like have respective short boards, so that the realization of mass production is difficult; the structure of combining the micro LED with the quantum dot color conversion has the risks of low color conversion efficiency and light leakage due to the high resolution requirement of micro display.
OLED technology is also one of the options for AR/VR applications, and the colorization device is implemented by combining white light with color filtering technology, but the white light has difficulty in achieving high brightness and long lifetime because of the presence of blue light. In the OLED white light technology system, blue light is fluorescent, has low efficiency and short lifetime, and reduces the overall brightness and lifetime of the white light.
Disclosure of Invention
According to the invention, the micro LED light emission and the OLED light emission are combined, the micro LED light emission is used for forming the blue pixel, the light emitting brightness and the yield are ensured, the OLED light emission is used for forming the green and red pixels, the light emitting brightness and the service life can be greatly improved relative to the white light, and the color micro display formed in such a way can easily meet the AR/VR application requirements. Currently, the preparation of a monochromatic device of a micro LED micro display and the OLED micro display technology are expected to become a low-cost and market-accepted batch technology.
The technical scheme of the invention is as follows:
a high-brightness full-color micro display structure comprises a silicon driving chip, wherein a micro LED anode layer and an OLED anode layer are respectively prepared on the upper surface of the silicon driving chip corresponding to a pixel area, the OLED anode layer comprises a red pixel anode and a green pixel anode, a micro LED light-emitting device layer and a micro LED cathode layer are sequentially arranged above the micro LED anode layer, the micro LED light-emitting device layer and the micro LED cathode layer jointly form a micro LED capable of realizing blue light emission, an inorganic medium layer integrally coats the micro LED anode layer, the micro LED light-emitting device layer and the micro LED cathode layer and fills electrode intervals among red, green and blue sub-pixels, preparing an OLED organic light-emitting device layer above the mixed interface of the inorganic dielectric layer and the OLED anode layer, and preparing an OLED organic device packaging layer above the OLED organic light-emitting device layer, and respectively preparing a red filter layer and a green filter layer above the OLED organic device packaging layer corresponding to the red and green pixels.
Preferably, the material of the anode layer of the micro led of the present invention is a low resistivity metal and is capable of forming an ohmic contact with the micro led.
Preferably, the MicroLED light-emitting device layer comprises an n-GaN layer, a quantum well light-emitting layer and a p-GaN layer.
Preferably, the micro led cathode layer of the present invention forms a low ohmic contact with the micro led, using a transparent conductive material.
Preferably, the inorganic dielectric layer has good blue light transmittance, and SiO is adopted2、SiONx、Al2O3Or a composite medium.
Preferably, the OLED anode layer of the present invention is a high reflectivity metal and is in direct contact with the OLED organic light emitting device layer.
Preferably, the OLED organic light-emitting device layer is a red-green two-color mixed light-emitting device.
Preferably, the OLED organic device packaging layer of the present invention is formed of organic materials, inorganic materials or a combination thereof.
The invention has the beneficial effects that:
the red and green lights are phosphorescence, have higher efficiency and longer service life, and are convenient for mixed preparation. Therefore, the invention replaces blue light of the OLED with blue light of the MicroLED, and maximizes the advantage of high-efficiency mixed light emission of red light and green light of the OLED. The invention utilizes the characteristics of luminescence of the MicroLED and the OLED, skillfully designs the device structure combining the MicroLED and the OLED, breaks through the difficult problems of complicated colorization process of the MicroLED device and insufficient brightness of the OLED device, and defines a high-brightness micro-display structure easy to prepare so as to meet the display requirements of AR/VR equipment.
Drawings
Fig. 1 is a schematic diagram of the structure of a high-brightness full-color micro-display according to the present invention.
Detailed Description
The invention is further illustrated by the following structural figures and examples.
As shown in fig. 1, a high-brightness full-color micro-display structure includes a silicon driving chip 1, a micro led anode layer 2 and an OLED anode layer 6 are prepared on a surface of the silicon driving chip 1 corresponding to a pixel region, and electrical connection between the silicon driving chip and the anode layer can be realized, wherein the OLED anode layer 6 includes a red pixel anode and a green pixel anode, a micro led light-emitting device layer 3 is above the micro led anode layer 2, a micro led cathode layer 4 is above the micro led light-emitting device layer 3, the micro led anode layer 2, the micro led light-emitting device layer 3 and the micro led cathode layer 4 jointly form a micro led diode capable of realizing blue light emission, an inorganic dielectric layer 5 integrally covers the micro led anode layer 2, the micro led light-emitting device layer 3 and the micro led cathode layer 4 and fills electrode spaces between red, green and blue sub-pixels, electrical insulation between the electrodes is realized, an OLED organic light-emitting device layer 7 is prepared above a mixed interface of the inorganic dielectric layer and the OLED, an OLED organic device packaging layer 8 is prepared above the OLED organic light emitting device layer, and a red filter layer 9 and a green filter layer 10 are respectively prepared above the OLED organic device packaging layer 8 corresponding to the red and green pixels.
The anode layer 2 of the MicroLED is made of low-resistivity metal, such as Au, and can form ohmic contact with the MicroLED.
The MicroLED light-emitting device layer 3 has a high-efficiency blue light-emitting function and mainly comprises an n-GaN layer, a quantum well light-emitting layer, a p-GaN layer and the like.
The micro led cathode layer 4 of the present invention must have high blue transmittance and form a low ohmic contact with the micro led, and preferably adopts a transparent conductive material such as ITO, IZO, etc.
The inorganic medium layer 5 physically covers the MicroLED anode layer 2, the MicroLED light-emitting device layer 3 and the MicroLED cathode layer 4, so that the MicroLED is protected from being damaged or polluted by subsequent processes, and the MicroLED keeps good lighting effect and long-term reliability. The inorganic medium layer 5 is used as an isolating material among the red, green and blue sub-pixel electrodes at the same time. The cover is notThe organic medium layer has good blue light transmittance, and can be made of SiO2、SiONx、Al2O3Or a composite medium, etc.
The OLED anode layer 6 of the invention is a high-reflectivity metal, the main body of the OLED anode layer can be made of Al, Ag and the like, and is in direct contact with the OLED organic light-emitting device layer 7, so that better work function matching can be formed.
The OLED organic light emitting device layer 7 of the present invention must be a high efficiency red-green two-color hybrid light emitting device.
The OLED organic device packaging layer 8 of the invention needs to have good water and oxygen isolation capability so as to ensure the efficiency and the service life of the OLED organic light-emitting device, and also needs to have higher red, green and blue light transmittance. The packaging layer can be made of organic materials, inorganic materials or a composite of the organic materials and the inorganic materials. Organic materials such as transparent OC paste, etc., and inorganic materials such as SiN, SiO, Al2O3And the upper and lower positions and the number of composite layers of the organic film layer and the inorganic film layer can be optimally adjusted by compounding the organic film layer and the inorganic film layer, so that a better water-oxygen isolation effect is realized.
The red filter layer 9 and the green filter layer 10 are prepared on the OLED device packaging layer 8, red and green mixed light emitted by an OLED organic device is decomposed, and a blue pixel area only has single-color blue light of a MicroLED without a blue filter layer.
The first embodiment.
As shown in fig. 1. A high-brightness micro display structure mainly comprises a silicon driving chip 1, a micro LED anode layer 2, a micro LED light-emitting device layer 3, a micro LED cathode layer 4, an inorganic medium layer 5, an OLED anode layer 6, an OLED organic light-emitting device layer 7, an OLED organic device packaging layer 8, a red filter layer 9 and a green filter layer 10. Preparing a micro LED anode layer 2 and an OLED anode layer 6 on the surface of a silicon driving chip 1 corresponding to a pixel area, and realizing electrical connection between the silicon driving chip and the anode layer, wherein the OLED anode layer (6) comprises a red pixel anode and a green pixel anode, a micro LED light-emitting device layer 3 is arranged above the micro LED anode layer 2, a micro LED cathode layer 4 is arranged above the micro LED light-emitting device layer 3, the micro LED anode layer 2, the micro LED light-emitting device layer 3 and the micro LED cathode layer 4 jointly form a micro LED capable of realizing blue light emission, an inorganic medium layer 5 integrally coats the micro LED anode layer 2, the micro LED light-emitting device layer 3 and the micro LED cathode layer 4 and fills electrode intervals among red, green and blue sub-pixels to realize electrical insulation among the electrodes, an OLED organic light-emitting device layer 7 is prepared above a mixed interface of the inorganic medium layer and the OLED anode layer, an OLED organic device packaging layer 8 is prepared above the OLED organic light-emitting device layer, a red filter layer 9 and a green filter layer 10 are respectively prepared above the OLED organic device encapsulation layer 8 corresponding to the red and green pixels.
According to the invention, the blue light of the OLED is replaced by the blue light of the MicroLED, so that the advantage of efficient mixed light emission of red light and green light of the OLED is maximally exerted. The micro LED is used for emitting light and is combined with OLED light emitting, blue pixels are formed by emitting light of the micro LED, the light emitting brightness and the yield are guaranteed, green and red pixels are formed by emitting light of the OLED, the light emitting brightness and the service life of the micro LED can be greatly improved relative to white light, and the color micro display formed in the way can easily meet the AR/VR application requirements.
Claims (8)
1. A high-brightness full-color micro display structure is characterized by comprising a silicon driving chip (1) and is characterized in that a micro LED anode layer (2) and an OLED anode layer (6) are respectively prepared on the upper surface of the silicon driving chip (1) corresponding to a pixel area, the OLED anode layer (6) comprises a red pixel anode and a green pixel anode, a micro LED light-emitting device layer (3) and a micro LED cathode layer (4) are sequentially arranged above the micro LED anode layer (2), the micro LED light-emitting device layer (3) and the micro LED cathode layer (4) jointly form a micro LED capable of realizing blue light emission, an inorganic medium layer (5) integrally covers the micro LED anode layer (2), the micro LED light-emitting device layer (3) and the micro LED cathode layer (4) and fills electrode intervals among red, green and blue sub-pixels, an OLED organic light-emitting device layer (7) is prepared above a mixed interface of the inorganic medium layer (5) and the OLED anode layer (6), and preparing an OLED organic device packaging layer (8) above the OLED organic light-emitting device layer (7), and respectively preparing a red filter layer (9) and a green filter layer (10) above the OLED organic device packaging layer (8) corresponding to the red and green pixels.
2. A high brightness full color microdisplay structure as in claim 1, characterized in that the material of the anode layer (2) of the microleds is a low resistivity metal and is capable of making ohmic contact with the microleds.
3. The structure of a high brightness full color micro display according to claim 1, characterized in that the micro led light emitting device layer (3) comprises n-GaN layer, quantum well light emitting layer, p-GaN layer.
4. The high brightness full color microdisplay structure of claim 1 in which the MicroLED cathode layer (4) makes low ohmic contact with the microleds, using transparent conductive material.
5. The structure of claim 1, wherein the inorganic dielectric layer (5) has good blue transmittance and is made of SiO2、SiONx、Al2O3Or a composite medium.
6. A high brightness full color microdisplay architecture according to claim 1 in which the OLED anode layer (6) is a high reflectivity metal and is in direct contact with the OLED organic light emitting device layer (7).
7. A high brightness full color micro-display structure as claimed in claim 1, characterized in that the OLED organic light emitting device layer (7) is a red-green two-color mixed light emitting device.
8. The full-color micro-display structure with high brightness according to claim 1, characterized in that the OLED organic device packaging layer (8) is made of organic material, inorganic material or a combination of the two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210509661.1A CN114628484A (en) | 2022-05-11 | 2022-05-11 | High-brightness full-color micro-display structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210509661.1A CN114628484A (en) | 2022-05-11 | 2022-05-11 | High-brightness full-color micro-display structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114628484A true CN114628484A (en) | 2022-06-14 |
Family
ID=81906503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210509661.1A Pending CN114628484A (en) | 2022-05-11 | 2022-05-11 | High-brightness full-color micro-display structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114628484A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111354877A (en) * | 2020-03-11 | 2020-06-30 | 广州新视界光电科技有限公司 | Preparation method of OLED hybrid light-emitting panel and light-emitting panel |
| CN111697047A (en) * | 2020-07-29 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of OLED hybrid display panel and display panel |
| CN111697046A (en) * | 2020-07-29 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of display panel with OLED and LED hybrid structure and display panel |
-
2022
- 2022-05-11 CN CN202210509661.1A patent/CN114628484A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111354877A (en) * | 2020-03-11 | 2020-06-30 | 广州新视界光电科技有限公司 | Preparation method of OLED hybrid light-emitting panel and light-emitting panel |
| CN111697047A (en) * | 2020-07-29 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of OLED hybrid display panel and display panel |
| CN111697046A (en) * | 2020-07-29 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of display panel with OLED and LED hybrid structure and display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110676282B (en) | Full-color mu LED micro-display device without electrical contact and manufacturing method thereof | |
| US20230109132A1 (en) | Display panel and manufacturing method thereof | |
| CN109103344A (en) | A kind of white light OLED device and display device | |
| CN111326621A (en) | Flip Micro LED full-color quantum dot chip, and preparation method and application thereof | |
| CN101257035B (en) | Organic electroluminescence display device with top luminous | |
| CN106410049A (en) | OLED device and OLED display | |
| JPH11329745A (en) | Luminescent element and laminated display element | |
| CN110676250A (en) | Full-color mu LED display device without electrical contact and huge transfer | |
| CN210516726U (en) | Full-color display chip | |
| CN110265587A (en) | Display panel and its manufacturing method | |
| CN110311053A (en) | Display panel and its manufacturing method | |
| CN114628484A (en) | High-brightness full-color micro-display structure | |
| CN114975507B (en) | Array substrate and display panel | |
| CN215342604U (en) | LED chip structure and display module | |
| CN114005911B (en) | Display device and preparation method thereof | |
| CN111180433B (en) | Light emitting diode module, display array and manufacturing method thereof | |
| CN209929348U (en) | Display panel | |
| CN112863372B (en) | Display panel, display device and preparation method of display panel | |
| CN1453884A (en) | Nano linear light-emitting element and display unit | |
| Wei et al. | P‐123: Hybrid Full Color Micro‐LED Displays with Quantum Dots | |
| US20220052224A1 (en) | Light-emitting diode, manufacturing method thereof and display | |
| WO2023092572A1 (en) | Hybrid light-emitting unit, display panel and preparation method therefor | |
| CN211858673U (en) | Flip Micro LED full-color quantum dot chip | |
| CN111863871A (en) | Display panel and preparation method thereof | |
| WO2023092573A1 (en) | White light-emitting device and display apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220614 |
|
| RJ01 | Rejection of invention patent application after publication |