CN114613874A - Method for manufacturing battery piece for forming laminated battery - Google Patents
Method for manufacturing battery piece for forming laminated battery Download PDFInfo
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- CN114613874A CN114613874A CN202011336708.6A CN202011336708A CN114613874A CN 114613874 A CN114613874 A CN 114613874A CN 202011336708 A CN202011336708 A CN 202011336708A CN 114613874 A CN114613874 A CN 114613874A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 81
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- 238000005530 etching Methods 0.000 claims abstract description 8
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- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 5
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 5
- -1 aluminum oxide compound Chemical class 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
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- 238000005215 recombination Methods 0.000 abstract description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
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- 238000003698 laser cutting Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
The invention discloses a manufacturing method of a battery piece for forming a laminated battery, which comprises the following steps: texturing the silicon wafer to form a textured surface on the surface of the silicon substrate; diffusion treatment to form a diffusion layer outside the suede; locally doping a secondary gate region of the silicon wafer by using laser with a first preset wavelength; scribing the silicon wafer by using laser with a second preset wavelength to form a separation groove on the surface of the side of the diffusion layer of the silicon wafer; etching and cleaning; and oxidizing to form oxide layers on the surfaces of the silicon wafers and the surfaces of the separation grooves. Therefore, after the silk-screen printing is finished, laser scribing is not needed, the whole battery can be directly mechanically broken, the battery can be cracked from the separation groove obtained by the laser scribing with the second wavelength, space charge areas of a plurality of small batteries obtained after the battery is broken are passivated by silicon oxide, and edge recombination is effectively reduced. Since the oxidation process is performed after the dicing, the inner surfaces of the separation grooves are passivated, and the electrical properties of the battery chips are improved.
Description
Technical Field
The invention relates to the field of photovoltaic cell manufacturing, in particular to a manufacturing method of a cell for forming a laminated cell.
Background
With the development of solar cells, the conversion efficiency of the modules gradually increases, and the market share of high-density modules gradually increases. In the process of preparing the small chip, the slicing area, especially the space charge area, becomes a high recombination area, and if no additional passivation treatment is carried out, the electrical performance parameters of the small chip are seriously influenced, so that the power output of the whole assembly is influenced.
As shown in fig. 1 and fig. 2, after the texturing process, a textured surface 11 ' is obtained, after the diffusion process, a diffusion layer 20 ' is formed on the surface, the finished battery piece is cut by using laser, generally, scribing is performed from the back surface of the silicon substrate 10 ' to obtain a back surface slot 30 ', the depth of the back surface slot 30 ' is about half of the thickness of the battery piece, and then the battery piece is mechanically broken to avoid the laser from directly cutting into a space charge region 60 ', and the edge position of the battery piece is formed into a mechanical fragment region 70 '.
The sliced and broken battery pieces are directly overlapped without passivation on the edges. The laser cutting area and the sheet breaking area are seriously compounded, if the laser cutting area and the sheet breaking area are directly overlapped without passivation treatment, the edge of a sliced sheet can become a serious compounding center, the electrical performance of the sliced battery sheet is lost, and the power performance of the whole assembly is influenced.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. To this end, an object of the present invention is to provide a method for manufacturing a cell sheet constituting a shingled battery.
The method for manufacturing the battery piece constituting the shingled battery according to the embodiment of the first aspect of the present invention comprises: texturing the silicon wafer to form a textured surface on the surface of the silicon substrate; diffusion treatment is carried out to form a diffusion layer outside the suede; locally doping the auxiliary gate region of the silicon wafer by using laser with a first preset wavelength; scribing the silicon wafer by using laser with a second preset wavelength to form a separation groove on the surface of the side where the diffusion layer of the silicon wafer is located; etching and cleaning; and carrying out oxidation treatment to form oxide layers on the surfaces of the silicon wafers and the surfaces of the separation grooves.
According to the manufacturing method of the battery piece, the post process flow is improved, after the silk-screen printing is completed, laser scribing is not needed, the whole battery piece can be directly mechanically broken, the battery can be broken from the separation groove obtained by the laser scribing with the second wavelength, the space charge regions of a plurality of small battery pieces obtained after the battery pieces are broken are passivated by silicon oxide, and edge recombination is effectively reduced. The passivated surface of the separation groove is the side edge of the battery piece formed after the separation, and the inner surface of the separation groove is passivated due to the oxidation process after scribing, so that the electrical performance of the battery piece is improved. In some embodiments, the depth of the separation groove is greater than the depth of the diffusion layer.
In some embodiments, the depth of the separation groove is 1/4-1/2 of the silicon wafer depth.
In some embodiments, the width of the separation groove is 15um-50um, and the depth of the separation groove is 20um-80 um.
In some embodiments, the second predetermined wavelength is 1064nm, the power of the second predetermined wavelength is 20-100W, and the diameter of the laser spot is 20-60 um.
In some embodiments, the first predetermined wavelength is 532nm, the power of the first predetermined wavelength is 15-40W, and the diameter of the laser spot is 90-200 um.
In some embodiments, the oxide layer has a thickness of 1nm to 5 nm.
In some embodiments, the oxidation treatment comprises: oxidizing the front side of the silicon wafer; passivating the aluminum oxide compound and the silicon nitrogen compound on the back surface of the silicon wafer; passivating the silicon nitrogen compound on the front surface of the silicon wafer, and performing antireflection treatment; wherein, the front surface is a surface formed with a suede and a diffusion layer, and the back surface is a side surface opposite to the front surface.
In some embodiments, the front side of the silicon wafer is oxidized using ozone or thermal oxygen.
In some embodiments, after the oxidation treatment, the following steps are further included: laser windowing; carrying out screen printing on the back surface of the silicon wafer; and breaking the silicon wafer from the separation groove and dividing the silicon wafer into a plurality of pieces.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a flowchart of a method for manufacturing a cell sheet for a conventional laminated cell (a step before dicing and breaking).
Fig. 2 is a schematic diagram of the prior art of dicing and breaking the battery pieces for manufacturing the shingled battery.
Fig. 3 is a flowchart of a method of manufacturing battery cells constituting a shingled battery according to an embodiment of the present invention.
Fig. 4 is a schematic view of a method of manufacturing a cell sheet constituting a shingled battery according to an embodiment of the present invention.
Fig. 5 is a schematic view of diffusion, dicing, oxidation, breaking of the cell sheets constituting the shingled battery according to an embodiment of the present invention.
Reference numerals:
a silicon substrate 10 ', a textured surface 11', a diffusion layer 20 ', a back side trench 30', a space charge region 60 ', a mechanical splitting region 70',
the silicon substrate 10, the textured surface 11, the diffusion layer 20, the separation groove 40, the oxide layer 50, the space charge region 60 and the mechanical splitting region 70.
Detailed Description
Embodiments of the present invention will be described in detail below, the embodiments described with reference to the drawings being illustrative, and the embodiments of the present invention will be described in detail below.
A method of manufacturing a cell sheet constituting a shingled battery according to an embodiment of the present invention will be described with reference to fig. 3 to 5.
As shown in fig. 3, a method of manufacturing a battery sheet constituting a stack cell according to an embodiment of the present invention includes:
s1: texturing is carried out on the silicon wafer to form a textured surface on the surface of the silicon substrate. Specifically, whether the silicon wafer is a monocrystalline silicon wafer or a polycrystalline silicon wafer, it may be treated with an acid or an alkali. The pyramid-shaped suede can be obtained by alkali treatment, the wormhole-shaped suede can be obtained by acid treatment, and the effect of improving the light trapping effect of the silicon wafer is realized no matter which suede is in any form.
S2: and (5) performing diffusion treatment to form a diffusion layer outside the suede. In this way, in the diffusion step, the silicon wafer is placed in a high-temperature diffusion furnace, and a gas such as nitrogen gas and POCL3 is introduced, so that the gas is decomposed at a high temperature and a P — N junction is formed on the surface of the silicon wafer. The purpose of diffusion junction (P-N junction) is to form a P-N junction on a P-type silicon surface by diffusing P atoms, and the formation of the P-N junction ensures that electrons and holes do not return to the original place after flowing, so that current is formed, and the current is led out by a lead, namely direct current.
S3: and locally doping the auxiliary gate region of the silicon wafer by using laser with a first preset wavelength. Specifically, in the laser doping process, the surface layer of a silicon wafer is melted by the heat effect of laser, phosphorus atoms in phosphosilicate glass (PSG) covering the top of a laser emitter enter the surface layer of the silicon wafer, the diffusion coefficient of the phosphorus atoms in liquid silicon is higher than that in solid silicon by several orders of magnitude, and the phosphorus atoms are doped to replace the positions of silicon atoms after solidification to form a heavily doped layer.
In the cell process, the overlap LDSE process (selective diffusion of crystalline silicon solar cell) may be performed by doping with a laser with a first predetermined wavelength (e.g., 532nm), so that the sub-grid line region is locally heavily doped for improving the contact.
S4: and scribing the silicon wafer by using laser with a second preset wavelength to form a separation groove on the surface of the side of the diffusion layer of the silicon wafer. The dividing grooves may also be referred to as scribe lanes in the following description. In the process of superposing LDSE after diffusion, the difference of the absorption depths of the silicon wafer to different wavelengths of light is utilized, two different lasers are used, the laser with the first preset wavelength is utilized to carry out laser doping on the silicon wafer, and the laser with the second preset wavelength is utilized to carry out scribing on the front surface of the silicon wafer. The separating groove is used for dividing the silicon wafer into a plurality of pieces in the subsequent wafer breaking process.
S5: and (5) etching and cleaning. Thus, the damage of the dicing region is removed by etching.
S6: and oxidizing to form oxide layers on the surfaces of the silicon wafers and the surfaces of the separation grooves. After oxidation by ozone or thermal oxygen, oxide layers grow on the surfaces of the silicon wafers and the inner surfaces of the separation grooves, and the exposed surfaces of the silicon wafers are passivated.
In the prior art, as shown in fig. 1, a silicon wafer is subjected to laser doping, then is subjected to etching cleaning and oxidation treatment, and then is subjected to screen printing, and after the screen printing is completed, a finished battery piece is diced into small batteries so as to prepare a laminated battery. Referring to fig. 2, the dicing method for the finished battery piece is as follows: and (3) scribing from the scribing channels on the back surface of the battery piece by using laser, wherein the depth of the scribed back surface groove 30' is about 1/2 of the thickness of the battery, and then mechanically breaking the battery piece. In order to reduce the scribing loss, the scribing is usually performed from the back side of the cell piece, and the scribing depth is also controlled not to break down the PN junction. The above process has the following disadvantages: the laser scribing region has serious recombination, especially the recombination of the space charge region obtained by diffusion at the scribing position is more serious, and the efficiency of a small battery after scribing is influenced.
Compared with the prior art, according to the manufacturing method of the battery piece, the process flow is improved, after the silk-screen printing is completed, laser scribing is not needed, the whole battery piece can be directly mechanically broken, the battery can be broken from the separation groove obtained by the laser scribing with the second wavelength, the space charge areas of a plurality of small battery pieces obtained after the battery pieces are broken are passivated by silicon oxide, and edge recombination is effectively reduced. The passivated surface of the separation groove is the side edge of the battery piece formed after the separation, and because the oxidation process is carried out after scribing, the inner surface of the separation groove is passivated, namely the edge of the battery piece after the separation is passivated, and the electrical performance of the battery piece is improved.
In conclusion, by using the improved process, the Voc of the battery piece can be improved by 2-3mV, the FF of the battery piece can be improved by 0.2-0.4%, and the efficiency of the battery piece can be improved by 0.1% -0.2%.
In some embodiments, the depth of the separation groove is greater than the depth of the diffusion layer. That is, the separation grooves penetrate at least the diffusion layer, and the separation grooves may also extend into the silicon substrate. The edge of the cracked piece consists of a silicon substrate (mechanical cracking) and a laser scribing area (avoiding contacting PN junctions).
The edge loss after splintering in different ways is: the composite occupation ratio of a silicon substrate area which is broken off by the machine is obviously smaller than that of a laser scribing area, so that the performance of the silicon substrate area cannot be greatly influenced even if the silicon substrate area is not passivated.
Thus, the edge of the diffusion layer (formed by the inner wall of the separation groove) of each cell chip is passivated in the oxidation process, so that the diffusion layer (space charge region) is completely passivated, and recombination is minimized.
In some embodiments, the depth of the separation groove is 1/4-1/2 of the wafer depth. The depth of the separation groove may also be referred to as a scribe depth. Therefore, the dividing groove adopts the depth, so that the scribing depth is larger than the space charge area, the silicon wafer is not cracked, and the laser damage caused by scribing can be partially removed in the subsequent etching cleaning process.
Optionally, the width of the separation groove is 15um-50um, and the depth of the separation groove is 20um-80 um. Specifically, the length of the separation groove penetrates and extends to the edge of the whole battery piece. Therefore, the adoption of the separation grooves with the sizes can improve the electrical performance of the battery small piece and simultaneously take the processing convenience into consideration.
The second preset wavelength is 1064nm, the power of the second preset wavelength is 20-100W, and the diameter of the laser spot is 20-60 um. Further, the first preset wavelength is 532nm, the power of the first preset wavelength is 15-40W, and the diameter of the laser spot is 90-200 um. Therefore, green laser with the wavelength of 532nm is adopted for doping, red laser with the wavelength of 1064nm is used for scribing on the scribing channel of the battery, different laser devices are adopted, and the operation is more convenient.
Further, the thickness of the oxide layer is 1nm-5 nm. Therefore, the oxide layer has the thickness, and the electrical performance of the battery is better.
In some embodiments, the oxidation treatment comprises: s61, oxidizing the front surface of the silicon wafer; s62, passivating the aluminum oxide compound and the silicon nitride compound on the back surface of the silicon wafer; s63, passivating the silicon nitrogen compound on the front surface of the silicon wafer and performing antireflection treatment; wherein, the front surface is a surface formed with a suede and a diffusion layer, and the back surface is a side surface opposite to the front surface.
Alternatively, the front surface of the silicon wafer is oxidized using ozone or hot oxygen. Thus, the scribe edge is passivated by growing SiO2 simultaneously with ozone or thermal oxidation. The preferred is a thermal oxidation mode, the high-temperature process of thermal oxidation can repair the lattice distortion and damage of the silicon wafer caused by laser, and meanwhile, the thermal oxidation layer is denser and thicker, so that the passivation effect is better.
In some embodiments, after the oxidation treatment, the following steps are further included: s7: laser windowing; s8: carrying out screen printing on the back of the silicon wafer; s9: and breaking the silicon wafer from the separation groove and dividing the silicon wafer into a plurality of pieces. Therefore, the battery piece is rapidly divided into a plurality of battery pieces with passivated edges, and the stack battery is convenient to manufacture.
In one particular embodiment, as shown in fig. 4 and 5:
1) the diffused silicon wafer forms a diffusion layer 20 and a silicon substrate 10, and the diffusion layer 20 is located on the textured surface 11 of the silicon substrate 10.
2) In the LDSE process, 532nm laser is used for doping the auxiliary grid region, the power is 15-40W, and the diameter of a light spot is 90-200 um; then, a 1064nm red laser is used to cut the scribe line region to form a separation groove 40, the depth of the separation groove needs to be greater than the depth (such as 1um) of the space charge region 60 formed by diffusion, and is less than or equal to half of the total thickness of the silicon wafer (preferably 20um-80um), the separation groove 40 can be formed by scribing once or several times
3) In the subsequent etching and cleaning process, the damage (such as part of silicon powder, silicon oxide and the like) caused by the scribing laser to the scribing channel can be removed. After ozone oxidation or thermal oxidation, an oxide layer 50 of 1-5nm is formed on the surface of the silicon wafer and the scribe lines.
4) After the whole cell process is completed, the whole cell does not need to be additionally scribed by laser, and only needs to be mechanically broken into small pieces, so that the mechanical splitting area 70 is formed at the side edge of each small piece. As shown in fig. 5, the laser scribing region of the broken small piece is already covered with the silicon oxide layer, so that recombination can be greatly reduced, and the rest of the silicon substrate is broken by a mechanical method, so that recombination can be significantly reduced compared with the laser scribing region.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
In the description of the present invention, "the first feature" and "the second feature" may include one or more of the features. In the description of the present invention, "a plurality" means two or more. In the description of the present invention, the first feature being "on" or "under" the second feature may include the first and second features being in direct contact, and may also include the first and second features being in contact with each other not directly but through another feature therebetween. In the description of the invention, "over," "above," and "on" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A method of manufacturing a cell sheet for forming a shingled battery, comprising:
texturing the silicon wafer to form a textured surface on the surface of the silicon substrate;
diffusion treatment is carried out, so that a diffusion layer is formed outside the suede surface;
locally doping the auxiliary gate region of the silicon wafer by using laser with a first preset wavelength;
scribing the silicon wafer by using laser with a second preset wavelength to form a separation groove on the surface of the side where the diffusion layer of the silicon wafer is located, wherein the separation groove is used for dividing the silicon wafer into a plurality of pieces in the subsequent breaking process;
etching and cleaning;
and carrying out oxidation treatment to form oxide layers on the surfaces of the silicon wafers and the surfaces of the separation grooves.
2. The manufacturing method according to claim 1, wherein a depth of the separation groove is larger than a depth of the diffusion layer.
3. The method of claim 1 wherein the depth of the separation groove is 1/4-1/2 of the wafer depth.
4. The manufacturing method according to claim 1, wherein the width of the separation grooves is 15um to 50um, and the depth of the separation grooves is 20um to 80 um.
5. The manufacturing method according to claim 1, wherein the second predetermined wavelength is 1064nm, the power of the second predetermined wavelength is 20-100W, and the diameter of the laser spot is 20-60 um.
6. The manufacturing method according to claim 5, wherein the first predetermined wavelength is 532nm, the power of the first predetermined wavelength is 15-40W, and the diameter of the laser spot is 90-200 um.
7. The manufacturing method according to claim 1, wherein the thickness of the oxide layer is 1nm to 5 nm.
8. The manufacturing method according to claim 1, wherein the oxidation treatment includes:
oxidizing the front side of the silicon wafer;
passivating the aluminum oxide compound and the silicon nitrogen compound on the back surface of the silicon wafer;
passivating the silicon nitrogen compound on the front surface of the silicon wafer, and performing antireflection treatment;
wherein, the front surface is a surface formed with a suede and a diffusion layer, and the back surface is a side surface opposite to the front surface.
9. The manufacturing method according to claim 7, wherein the front surface of the silicon wafer is oxidized by ozone or thermal oxygen.
10. The manufacturing method according to claim 1, further comprising, after the oxidation treatment, the steps of:
laser windowing;
carrying out screen printing on the back surface of the silicon wafer;
and breaking the silicon wafer from the separation groove and dividing the silicon wafer into a plurality of pieces.
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| CN111029437A (en) * | 2019-11-26 | 2020-04-17 | 常州时创能源股份有限公司 | Preparation method of small battery |
| CN111952414A (en) * | 2020-08-21 | 2020-11-17 | 晶科绿能(上海)管理有限公司 | Post-cutting passivation method of silicon-based semiconductor device and silicon-based semiconductor device |
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| CN104201240A (en) * | 2014-08-29 | 2014-12-10 | 四川钟顺太阳能开发有限公司 | Production process for solar cell, and solar cell produced by same |
| CN110473937A (en) * | 2019-07-29 | 2019-11-19 | 泰州隆基乐叶光伏科技有限公司 | Cell piece production method, cell piece, battery component |
| CN110534616A (en) * | 2019-08-29 | 2019-12-03 | 常州时创能源科技有限公司 | The preparation process of crystal silicon battery fragment |
| CN111029437A (en) * | 2019-11-26 | 2020-04-17 | 常州时创能源股份有限公司 | Preparation method of small battery |
| CN111952414A (en) * | 2020-08-21 | 2020-11-17 | 晶科绿能(上海)管理有限公司 | Post-cutting passivation method of silicon-based semiconductor device and silicon-based semiconductor device |
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