CN114611251A - Ion thruster grid aperture scaling design method - Google Patents
Ion thruster grid aperture scaling design method Download PDFInfo
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Abstract
The application relates to the technical field of space electric propulsion, in particular to a method for designing the scaling of an ion thruster grid aperture, which comprises the following steps: step 1: the beam divergence angles corresponding to different combinations of screen aperture and thickness under certain electrical and gas parameters are obtained by numerical simulation calculation of a grid ion method; step 2: substituting the combination of the aperture and the thickness of the screen grid with the same beam divergence angle in the step 1 into a diversion calculation formula to calculate and obtain a corresponding diversion coefficient; and step 3: and (3) selecting proper parameters from the combinations of the aperture and the thickness of the screen grid with the same conductivity coefficient in the step (2) as design parameters according to actual needs. The method and the device utilize the similarity of the plasma sheath structure to carry out the scaling design of the grid aperture of the ion thruster, so that the position of the plasma sheath is not changed, and the grid system is ensured to have the similarity when the geometric dimension is changed.
Description
Technical Field
The application relates to the technical field of space electric propulsion, in particular to a method for designing aperture scaling of a grid electrode of an ion thruster.
Background
The realization of high power and ultrahigh specific impulse is one of the major development directions of the ion thruster. In order to realize high power and ultrahigh specific impulse of the ion thruster, the accelerating voltage and the beam extraction capability of a grid system need to be greatly improved. In the conventional double-gate or triple-gate system, decoupling of an ion acceleration process and an extraction process cannot be realized, and high power of the thruster can be realized only by enlarging the area of a gate.
Theoretical studies show that: the maximum diameter of a grid system of the traditional grid ion thruster is 50cm, and the maximum power is about 50 kW; the two-stage four-grid acceleration technology decouples the extraction process and the acceleration process of ions, so that the high power and the ultrahigh specific impulse of the thruster can be realized by greatly improving extraction voltage and acceleration voltage under the condition of not increasing the diameter of a grid electrode. FIG. 1 is a schematic diagram of a two-stage four-gate acceleration system. Theoretical research shows that the accelerating voltage of the double-stage accelerating system can be increased to 80kV at most, the specific impulse of a xenon working medium exceeds 30000s, and the power can reach megawatt.
No matter the traditional grid ion thruster or the double-stage acceleration ion thruster is adopted, under high power, the grid system is required to bear higher energy deposition, and if the thickness of the grid is smaller, the grid is seriously deformed, and the service life of the grid system is shortened. Research shows that the thermal deformation resistance of the grid can be effectively improved by increasing the thickness of the grid, but the conductivity of the grid system can not be reduced by correspondingly increasing the aperture of the grid by increasing the thickness of the grid. Therefore, it is necessary to develop design methodology for gate aperture and thickness scaling.
Disclosure of Invention
The application mainly aims to provide a method for designing the scaling of the grid aperture of an ion thruster, which is used for designing a large-aperture grid system of a high-power ion thruster.
In order to achieve the above object, the present application provides an ion thruster gate aperture scaling design method, including the following steps: step 1: adopting grid ion method numerical simulation calculation to obtain beam divergence angles corresponding to different combinations of screen aperture and thickness under certain electrical and gas parameters; step 2: substituting the combination of the aperture and the thickness of the screen grid with the same beam divergence angle in the step 1 into a flow guide calculation formula, and calculating to obtain a corresponding flow guide coefficient; and step 3: and (3) selecting proper parameters from the combinations of the aperture and the thickness of the screen grid with the same conductivity coefficient in the step (2) as design parameters according to actual needs.
Further, the calculation of the beam divergence angle in step 1 includes the following steps: step 1.1: inputting initial parameters such as grid voltage, grid geometric parameters and the like in a simulation system; step 1.2: calculating an initial electrostatic field, dividing a simulation calculation area into a large number of grids, taking the voltage applied by each grid as an initial condition, calculating the electrostatic potential and the electrostatic field of each node by solving a poisson equation, and interpolating the electric field intensity of other positions according to the electric field of surrounding nodes; step 1.3: entering particles, wherein the simulated particles comprise propellant ions and electrons in the particle simulation of the ion thruster grid system, the propellant ions enter the calculation region through adding the simulated particles into the calculation region, and a certain amount of simulated particles enter the calculation region from the left boundary (discharge chamber) of the calculation region at a specific speed in each time step in the simulation; step 1.4: calculating the electric field intensity after the charged particles are added, weighting the electric quantity of the charged particles to surrounding grid nodes, and solving poissoCalculating the potential and the electric field of each node by using an n equation, and interpolating the electric field intensity of the position where the particle is located according to the electric fields of the surrounding nodes; step 1.5: ions are accelerated according to newton's second law, and the accelerated motion of an ion can be expressed according to the principles of kinematics as: f ═ M (dv/dt), F ═ Mia, dx/dt ═ F; step 1.6: judging whether the electric field is changed or not, and returning to the step 1.2 if the electric field is changed; step 1.7: and if the electric field is not changed, calculating the ion trajectory and the beam divergence angle.
Further, in step 1.7, calculating the ion trajectory according to the newton's second law in step 1.5 to obtain the axial position and the radial position of the ion at each time step, that is, to obtain the motion trajectory of the ion; and calculating the beam divergence angle according to the axial position and the radial position of all ions arriving at the right boundary of the calculation region, calculating the beam divergence angle d of each ion by using tan alpha as y/x, and counting the obtained beam divergence angle according to the definition of the beam divergence angle.
Further, in step 2, the diversion calculation formula is as follows:
wherein: epsilon0Representing the vacuum dielectric constant, e representing the electron charge, MiRepresents the ion mass, ds represents the screen aperture diameter, lg represents the gate spacing, and ts represents the screen thickness.
The invention provides a method for designing the scaling of the grid aperture of an ion thruster, which has the following beneficial effects:
the method and the device utilize the similarity of the plasma sheath structure to carry out the scaling design of the grid aperture of the ion thruster, so that the position of the plasma sheath is not changed, the grid system is ensured to have the similarity when the geometric dimension is changed, and the grid design can be carried out quickly according to actual needs.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, serve to provide a further understanding of the application and to enable other features, objects, and advantages of the application to be more apparent. The drawings and their description illustrate the embodiments of the invention and do not limit it. In the drawings:
FIG. 1 is a schematic diagram of a bipolar quad-gate acceleration system;
FIG. 2 illustrates sheath configurations and ion trajectories of plasma with different screen aperture;
FIG. 3 shows sheath configurations and ion trajectories for plasma with different screen thicknesses;
fig. 4 is a flowchart of an ion thruster gate aperture scaling design method provided in an embodiment of the present application.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.
In addition, the term "plurality" shall mean two as well as more than two.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
As shown in fig. 4, the present application provides a design method for scaling an aperture of a gate of an ion thruster, which includes the following steps: step 1: adopting grid ion method numerical simulation calculation to obtain beam divergence angles corresponding to different combinations of screen aperture and thickness under certain electrical and gas parameters; step 2: substituting the combination of the aperture and the thickness of the screen grid with the same beam divergence angle in the step 1 into a diversion calculation formula to calculate and obtain a corresponding diversion coefficient; and 3, step 3: and (3) selecting proper parameters from the combinations of the aperture and the thickness of the screen grid with the same conductivity coefficient in the step (2) as design parameters according to actual needs.
Specifically, during the operation of the ion thruster, plasmas with a certain density are generated in the discharge chamber, and the plasmas generate a plasma sheath layer near the downstream screen grid of the discharge chamber. Since the grids are porous and a positive potential is applied to the grids, the electric field penetrates into the discharge cells. Under the combined action of the electric potential generated by the plasma in the discharge chamber and the electric potential permeated into the discharge chamber, a plasma sheath layer at the screen grid tiny hole is formed, and under the normal condition, the plasma sheath layer is bent towards one side of the discharge chamber and has convergence effect on the extracted ions, wherein the curvature is different, the convergence performance is different, and the convergence effect is stronger when the curvature is larger. The curvature of the plasma sheath layer is related to the extraction potential and the plasma density, and is also related to the aperture of the screen aperture and the thickness of the screen. According to the design theory of a grid system, under the condition that electrical and gas parameters are not changed, the beam divergence angle and the flow conductivity coefficient of the grid system are determined by the aperture and the thickness of a screen grid, the screen grid is a basic parameter for designing the grid system, and geometric parameter designs of other grids refer to the two parameters.
Further, the calculation of the beam divergence angle in step 1 includes the following steps: step 1.1: inputting initial parameters such as grid voltage, grid geometric parameters and the like in a simulation system; step 1.2: calculating an initial electrostatic field, dividing a simulation calculation area into a large number of grids, taking the voltage applied by each grid as an initial condition, calculating the electrostatic potential and the electrostatic field of each node by solving a poisson equation, and interpolating the electric field intensity of other positions according to the electric field of surrounding nodes; step 1.3: entering particles, wherein the simulated particles comprise propellant ions and electrons in the particle simulation of the ion thruster grid system, the propellant ions enter the calculation area through adding the simulated particles into the calculation area, and a certain amount of simulated particles enter the calculation area from the left boundary (discharge chamber) of the calculation area at a specific speed in each time step in the simulation; step 1.4: calculating the electric field intensity after the charged particles are added, weighting the electric quantity of the charged particles to surrounding grid nodes, calculating the potential and electric field of each node by solving a poisson equation, and interpolating the electric field intensity of the position where the particles are located according to the surrounding node electric field; step 1.5: ions are accelerated according to newton's second law, and the accelerated motion of an ion can be expressed according to the principles of kinematics as: f ═ M (dv/dt), F ═ Mia, dx/dt ═ F; step 1.6: judging whether the electric field is changed or not, and returning to the step 1.2 if the electric field is changed; step 1.7: and if the electric field is not changed, calculating the ion trajectory and the beam divergence angle.
Further, in step 1.7, calculating the ion trajectory according to the newton's second law in step 1.5 to obtain the axial position and the radial position of the ion at each time step, that is, to obtain the motion trajectory of the ion; and calculating the beam divergence angle according to the axial position and the radial position of all ions arriving at the right boundary of the calculation region, calculating the beam divergence angle d of each ion by using tan alpha as y/x, and counting the obtained beam divergence angle according to the definition of the beam divergence angle.
Further, in step 2, the diversion calculation formula is:
wherein: ε 0 represents the vacuum dielectric constant, e represents the electron charge, Mi represents the ion mass, ds represents the screen aperture diameter, lg represents the gate spacing, and ts represents the screen thickness.
Further, the screen grid aperture is one of the key factors affecting the position and shape of the plasma sheath. Under the condition that other geometric parameters and electrical parameters are not changed, the larger the aperture of the screen grid is, the deeper the plasma sheath layer is towards one side of the discharge chamber, so that the curvature of the plasma sheath layer is increased, on one hand, the extraction capability of ions is improved, and on the other hand, the convergence performance of the ions is enhanced. However, the curvature is too large, ions can generate an over-focusing phenomenon, so that grid corrosion is accelerated, and the beam divergence angle is too large. FIG. 2 illustrates the effect of different screen aperture on the sheath configuration and ion trajectory of the plasma.
Further, the screen gate thickness is another key factor affecting the position and shape of the plasma sheath. Under the condition that other geometric parameters and electrical parameters are not changed, the thickness of the screen grid is increased, and the plasma sheath layer moves towards one side of the grid electrode, so that the curvature of the sheath layer is reduced, on one hand, the beam extraction capability of a grid electrode system is reduced, and on the other hand, the convergence capability of ions is weakened. However, too small a curvature may cause an under-focusing phenomenon of ions, and also increase the beam divergence angle. FIG. 3 illustrates the effect of different screen grid thicknesses on the sheath configuration and ion trajectories of the plasma. Wherein the plasma sheath layer 1 corresponds to a thick screen grid, and the plasma sheath layer 2 corresponds to a thin screen grid.
Therefore, the change of the configuration of the plasma sheath layer necessarily causes the change of the ion focusing performance and the ion extraction capability of the grid system. The aperture of the screen is increased, the plasma sheath layer moves to one side of the discharge chamber, the thickness of the screen is increased, and the plasma sheath layer moves to one side of the grid, so that an optimal combination of the aperture and the thickness of the screen is inevitably existed, the position shape of the plasma sheath layer is not changed, and the grid system is ensured to have similarity when the geometric dimension is changed. In the embodiment of the application, firstly, the beam divergence angle invariance is utilized to obtain all combinations of apertures and thicknesses of different screens through numerical simulation; secondly, calculating the combination of different screen aperture and thickness with the structural similarity of the plasma sheath layer by utilizing the flow guide invariance according to a flow guide formula, wherein the combination of the screen aperture and the thickness with equal beam divergence angle and flow guide coefficient is the geometric structure with the geometric similarity of the grid electrode, the corresponding plasma sheath layer also has the structural similarity, and finally, selecting proper screen aperture and thickness combination parameters from the combination as design parameters according to actual requirements.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (4)
1. A method for designing the scaling of the grid aperture of an ion thruster is characterized by comprising the following steps:
step 1: the beam divergence angles corresponding to different combinations of screen aperture and thickness under certain electrical and gas parameters are obtained by numerical simulation calculation of a grid ion method;
step 2: substituting the combination of the aperture and the thickness of the screen grid with the same beam divergence angle in the step 1 into a diversion calculation formula to calculate and obtain a corresponding diversion coefficient;
and step 3: and (3) selecting proper parameters from the combinations of the aperture and the thickness of the screen grid with the same conductivity coefficient in the step (2) as design parameters according to actual needs.
2. The method of designing the ion thruster grid aperture scaling as claimed in claim 1, wherein the calculation of the beam divergence angle in step 1 comprises the steps of:
step 1.1: inputting initial parameters such as grid voltage, grid geometric parameters and the like in a simulation system;
step 1.2: calculating an initial electrostatic field, dividing a simulation calculation area into a large number of grids, taking the voltage applied by each grid as an initial condition, calculating the electrostatic potential and the electrostatic field of each node by solving a poisson equation, and interpolating the electric field intensity of other positions according to the electric field of surrounding nodes;
step 1.3: entering particles, wherein the simulated particles comprise propellant ions and electrons in the particle simulation of the ion thruster grid system, the propellant ions enter the calculation area through adding the simulated particles into the calculation area, and a certain amount of simulated particles enter the calculation area from the left boundary (discharge chamber) of the calculation area at a specific speed in each time step in the simulation;
step 1.4: calculating the electric field intensity after the charged particles are added, weighting the electric quantity of the charged particles to surrounding grid nodes, calculating the potential and electric field of each node by solving a poisson equation, and interpolating the electric field intensity of the position where the particles are located according to the surrounding node electric field;
step 1.5: ions are accelerated according to newton's second law, and the accelerated motion of an ion can be expressed according to the principles of kinematics as: m (dv/dt), F Mia,dx/dt=F;
Step 1.6: judging whether the electric field is changed or not, and returning to the step 1.2 if the electric field is changed;
step 1.7: and if the electric field is not changed, calculating the ion trajectory and the beam divergence angle.
3. The method according to claim 2, wherein in step 1.7, the ion trajectory is calculated according to newton's second law in step 1.5 to obtain the axial position and the radial position of the ion at each time step, that is, the motion trajectory of the ion;
and calculating the beam divergence angle according to the axial position and the radial position of all ions arriving at the right boundary of the calculation region, calculating the beam divergence angle alpha of each ion by using tan alpha as y/x, and counting the obtained beam divergence angle according to the definition of the beam divergence angle.
4. The method according to claim 2, wherein in step 2, the flow calculation formula is:
wherein: epsilon0Representing the vacuum dielectric constant, e representing the electron charge, MiRepresents the ion mass, ds represents the screen aperture diameter, lg represents the gate spacing, and ts represents the screen thickness.
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