CN113606103A - Step grid, grid structure, and method and system for determining parameters of step grid - Google Patents
Step grid, grid structure, and method and system for determining parameters of step grid Download PDFInfo
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Abstract
The invention relates to a step grid, a grid structure and a method and a system for determining parameters of the step grid, wherein the grid is designed into a step-shaped structure, the step grid is divided into a central area, a transition area and an edge area along the radial direction, the thicknesses of the central area, the transition area and the edge area are sequentially reduced, the distance from the central area, the transition area and the edge area to another grid is sequentially increased, the change of the distance of the grid along the radial direction is realized, the distances of the grids in different areas are different, so that plasma sheaths at different radial positions have accelerating electric fields with proper strength, and ion beams at different positions can be guaranteed to be well focused.
Description
Technical Field
The invention relates to the technical field of miniature ionic electric thrusters, in particular to a step grid, a grid structure, a step grid parameter determination method and a step grid parameter determination system.
Background
The ion thruster accelerates ions in the plasma of the discharge chamber to generate thrust through the grid, the grid of the ion thruster generally comprises a screen grid and an accelerating grid, the screen grid and the accelerating grid generally have porous structures, the screen grid holes are aligned with the accelerating grid holes, the plasma of the discharge chamber forms a spherical plasma sheath above the screen grid holes, the ions are emitted from the plasma sheath, and the ions are accelerated through an electric field between the grids and are emitted from the accelerating grid holes to form an ion beam. The shape of the plasma sheath is related to the parameters of the upstream plasma of the screen grid, when the values of the upstream plasma density and the electron temperature are higher, the emission capability of the plasma sheath is stronger, a stronger electric field is needed to accelerate ions, otherwise, the ion beam is dispersed; at lower values of upstream plasma density and electron temperature, the plasma sheath emission capability is weaker and the accelerating electric field needs to be reduced, otherwise the ion beam is over-focused. Both beam divergence and beam overcoocusing can cause a reduction in ion beam extraction efficiency, and can also cause the acceleration grid to be bombarded by beam ions, reducing the performance and lifetime of the acceleration grid. The method has the advantages that the method has important significance for improving the performance and the service life of the ion thruster in preventing the divergence and the over-focusing of the ion beams, and for the conventional ion thruster, the size of a discharge chamber is large, a strong magnetic field region is limited near an anode, most of plasmas are relatively uniform, the size of the miniature ion thruster is small, the gradient of a magnetic field in the radial direction is large, the uniformity of the plasmas in the radial direction under the influence of the magnetic field is relatively poor, and if the radial intervals of grids are kept consistent, the good ion beam focusing can not be realized in both the central area and the edge area of the grids.
Disclosure of Invention
The invention aims to provide a step grid, a grid structure, a step grid parameter determination method and a step grid parameter determination system, so as to ensure that ion beams at different positions can be well focused.
In order to achieve the purpose, the invention provides the following scheme:
a ladder grid suitable for an ion thruster is characterized in that one side of the ladder grid is in a ladder shape, and the other side of the ladder grid is a plane;
the step grid is divided into a central area, a transition area and an edge area along the radial direction; a plurality of grid holes are arranged in the central area, the transition area and the edge area;
the thicknesses of the central area, the transition area and the edge area are sequentially reduced, and the distances from the central area, the transition area and the edge area to the other grid electrode are sequentially increased;
the ion current density of the central area is greater than the upper limit value of the ion current density, the ion current density of the edge area is less than the lower limit value of the ion current density, and the ion current density of the transition area is between the ion current densities of the central area and the edge area.
Optionally, the gate structure uses the aforementioned step gate, and the gate structure includes: the grid-type acceleration grid comprises a screen grid and an acceleration grid, wherein at least one of the screen grid and the acceleration grid is a stepped grid.
Optionally, when the screen grid is a stepped grid and the accelerating grid is a planar grid, one stepped side of the screen grid faces the accelerating grid;
when the screen grid is a planar grid and the accelerating grid is a stepped grid, one stepped side of the accelerating grid faces the screen grid;
when the screen grid and the accelerating grid are both stepped grids, one stepped side of the screen grid is opposite to one stepped side of the accelerating grid.
A parameter determination method applied to a step gate of an ion thruster, the parameter determination method comprising:
determining grid parameters at the center of the ion thruster through a thruster beam extraction experiment, wherein the grid parameters are used as grid parameters of the central area of the stepped grid; the grid parameters comprise grid distance, grid thickness and grid hole diameter; the grid electrode distance is the distance between the central area of the stepped grid electrode and two opposite surfaces of the other grid electrode in the grid electrode structure; the thickness of the grid is the thickness of the central area of the stepped grid;
determining the effective acceleration distance of the central area according to the grid parameters of the central area;
determining gate parameters of the transition region according to the effective acceleration distance of the central region and the ion density and electron temperature of the upstream of the gate structure at the center of the transition region;
and determining the grid parameters of the edge region according to the grid parameters of the transition region and the ion density and the electron temperature of the grid structure upstream in the center of the edge region.
Optionally, the determining an effective acceleration distance of the central region according to the gate parameter of the central region specifically includes:
using a formula based on the gate parameters of the central region
Calculating the effective acceleration distance of the central area;
wherein leCenterAn effective acceleration distance for the central zone; lgCenterThe gate pitch is the center region; dsThe diameter of the gate hole; t is tsCenterThe gate thickness in the central region.
Optionally, the determining gate parameters of the transition region according to the effective acceleration distance of the central region and the ion density and the electron temperature of the upstream of the gate structure at the center of the transition region specifically includes:
using a formula based on the effective acceleration distance of the central region and the ion density and electron temperature of the corresponding gate structure upstream of the center of the transition region
Calculating the effective acceleration distance of the transition area; wherein leEffective acceleration distance of the transition region, niIs the ion density, T, of the gate structure upstream of the center of the transition regioneIs the electron temperature, n, upstream of the gate structure at the center of the transition regioniCenterAnd TeCenterRespectively the ion density and the electron temperature of the grid upstream at the center of the thruster;
and determining the gate thickness and the gate spacing of the transition region according to the gate parameters of the central region and the effective acceleration distance of the transition region.
Optionally, the determining the gate thickness and the gate pitch of the transition region according to the gate parameter of the central region and the effective acceleration distance of the transition region specifically includes:
on-screen grid stageWhen the acceleration grid is a planar grid, the effective acceleration distance of the transition region and the grid parameters of the central region are utilized according to a formula
Calculating the gate thickness and the gate spacing of the transition region; wherein lgIs the gate pitch of the transition region, taThe gate thickness of the transition region.
Optionally, the determining the gate thickness and the gate pitch of the transition region according to the gate parameter of the central region and the effective acceleration distance of the transition region specifically includes:
when the screen grid is a plane grid and the accelerating grid is a step grid, the formula is utilized according to the effective accelerating distance of the transition region, the diameter of the grid hole and the thickness of the screen grid
Calculating the grid electrode distance of the transition region; wherein lgIs the gate pitch of the transition region, tsThe thickness of the screen grid;
according to the grid spacing of the transition region and the grid parameter of the central region, using a formula ta＝lgCenter+tsCenter-lgCalculating the thickness of the gate of the transition region; wherein, taThe gate thickness of the transition region.
A parameter determination system applicable to a step gate of an ion thruster, the parameter determination system comprising:
the central area grid parameter determining module is used for determining grid parameters at the center of the ion thruster through a thruster beam extraction experiment and taking the grid parameters as grid parameters of the central area of the stepped grid; the grid parameters comprise grid distance, grid thickness and grid hole diameter; the grid electrode distance is the distance between the central area of the stepped grid electrode and two opposite surfaces of the other grid electrode in the grid electrode structure; the thickness of the grid is the thickness of the central area of the stepped grid;
the central area effective acceleration distance determining module is used for determining the effective acceleration distance of the central area according to the grid parameters of the central area;
the transition region grid parameter determining module is used for determining grid parameters of the transition region according to the effective acceleration distance of the central region and the ion density and the electron temperature of the upstream of the grid structure at the center of the transition region;
and the marginal region grid electrode parameter determining module is used for determining grid electrode parameters of a marginal region according to the grid electrode parameters of the transition region and the ion density and the electron temperature at the upstream of the grid electrode structure in the center of the marginal region.
Optionally, the transition region gate parameter determining module specifically includes:
a transition region effective acceleration distance calculation submodule for calculating ion density and electron temperature at upstream of the gate structure corresponding to the center of the transition region according to the effective acceleration distance of the center region
Calculating the effective acceleration distance of the transition area; wherein leEffective acceleration distance of the transition region, niIs the ion density, T, of the gate structure upstream of the center of the transition regioneIs the electron temperature, l, upstream of the gate structure at the center of the transition regioneCenterEffective acceleration distance of the central zone, niCenterAnd TeCenterRespectively the ion density and the electron temperature of the grid upstream at the center of the thruster;
and the transition region grid parameter determining submodule is used for determining the grid thickness and the grid distance of the transition region according to the grid parameter of the central region and the effective acceleration distance of the transition region.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a step grid, a grid structure and a method and a system for determining parameters of the step grid, wherein the grid is designed into a step-shaped structure, the step grid is divided into a central area, a transition area and an edge area along the radial direction, the thicknesses of the central area, the transition area and the edge area are sequentially reduced, the distance from the central area, the transition area and the edge area to another grid is sequentially increased, the change of the distance of the grid along the radial direction is realized, the distances of the grids in different areas are different, so that plasma sheaths at different radial positions have accelerating electric fields with proper strength, and ion beams at different positions can be guaranteed to be well focused.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic three-dimensional structure of a step gate according to the present invention;
FIG. 2 is a front view of a step gate according to the present invention;
FIG. 3 is a cut-away view along AB of FIG. 2 in accordance with the present invention;
FIG. 4 is a schematic structural diagram of a planar gate according to the present invention; FIG. 4(a) is a front view of a planar gate, and FIG. 4(b) is a side view of the planar gate;
FIG. 5 is a block diagram of a screen grid ladder provided by the present invention;
FIG. 6 is a block diagram of the acceleration grid stepping provided by the present invention;
FIG. 7 is a block diagram of a dual gate ladder provided by the present invention;
fig. 8 is a flowchart of a method for determining parameters of a step grid suitable for an ion thruster provided by the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a step grid, a grid structure, a step grid parameter determination method and a step grid parameter determination system, so as to ensure that ion beams at different positions can be well focused.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
The invention provides a stepped grid suitable for an ion thruster, as shown in figures 1-3, one side of the stepped grid is stepped, and the other side is a plane;
the step grid is divided into a central area, a transition area and an edge area along the radial direction; a plurality of grid holes are arranged in the central area, the transition area and the edge area;
the thicknesses of the central area, the transition area and the edge area are sequentially reduced, and the distances from the central area, the transition area and the edge area to the other grid electrode are sequentially increased;
the ion current density of the central area is greater than the upper limit value of the ion current density, the ion current density of the edge area is less than the lower limit value of the ion current density, and the ion current density of the transition area is between the ion current densities of the central area and the edge area.
The thickness of the grid electrode in the central area is the largest, the distance between the grid electrodes is the smallest, the ion acceleration capability is the strongest, the thickness of the edge area is the smallest, the distance is the largest, and the acceleration capability is the weakest.
The upper limit of the ion current density is 80% of the maximum ion current density that can be accelerated by the grid, and the lower limit of the ion current density is 10% of the maximum ion current density that can be accelerated by the grid.
The grid (screen grid or accelerating grid) is divided into a plurality of regions according to the radial distribution characteristic of the grid upstream plasma parameters, the grid distances of different regions are different, the region with small grid distance has strong ability of accelerating ions and is matched with the plasma sheath with stronger emission ability, the region with large grid distance has weak ability of accelerating ions and corresponds to the plasma sheath with weaker emission ability, so that the thruster can realize better focusing characteristic at each position in the radial direction.
Example two
A gate structure of an ion thruster, as shown in fig. 5 to 7, the gate structure employs a step gate provided in the first embodiment of the present invention, and the gate structure includes: the grid-shielding structure comprises a grid shielding layer and an accelerating grid, wherein at least one of the grid shielding layer and the accelerating grid is a stepped grid.
As shown in fig. 5, when the screen grid is a stepped grid and the accelerating grid is a planar grid, one side of the screen grid in the stepped shape faces the accelerating grid; the structure of the planar gate is shown in fig. 4.
As shown in fig. 6, when the screen grid is a planar grid and the accelerating grid is a stepped grid, one side of the accelerating grid in the stepped shape faces the screen grid; the screen grids are uniform in thickness along the radial direction and can be integrally processed to be thin, so that the loss of beam ions on the screen grids is reduced.
As shown in fig. 7, when both the screen grid and the acceleration grid are stepped grids, the stepped side of the screen grid is opposite to the stepped side of the acceleration grid.
The central area corresponds to the main distribution area of the plasma in the discharge chamber, the plasma density and the electron temperature are higher and more uniform relative to other positions, and the plasma sheath in the area has stronger emission capability and larger thickness, so that the distance between the area and another grid (an accelerating grid or a screen grid) is shortened, the beam emission capability of the grid is improved, and the phenomenon of beam divergence is prevented; the region between the center of the grid and the edge of the grid is called a transition region, the plasma density and the electron temperature of the discharge chamber corresponding to the transition region have lower values than those of the central region and higher values than those of the edge region, and the ion emission capability is weaker than that of the central region, so that the thickness of the grid is slightly smaller than that of the central region; the edge area of the grid corresponds to the plasma near the anode of the discharge chamber, and the ion emission capability is the weakest, so that the thickness of the grid in the area is the smallest, the beam emission capability of the grid is weakened, the grid is matched with the emission capability of the plasma, and the phenomenon of beam over-focusing is prevented.
Respectively processing screen grid holes and acceleration grid holes in the central area, the transition area and the edge area, wherein the screen grid holes and the acceleration grid holes are consistent in number and position, and are distributed in a hexagonal filling array; the most edge of the screen grid and the accelerating grid is a non-porous area without processing screen grid holes and accelerating grid holes, and the positioning and assembly of the two grids are carried out in the non-porous area. In each zone, the screen apertures and the accelerator apertures remain centered.
The grid is divided into a plurality of areas along the radial direction of the thruster, different grid intervals of different areas are realized by designing the screen grids or the accelerating grids into a stepped structure, so that plasma sheaths at different radial positions have accelerating electric fields with moderate strength, ion beams at different positions can be guaranteed to be well focused, and the performance and the service life of a grid component of the miniature ion thruster are further improved.
EXAMPLE III
The invention provides a method for determining parameters of a step gate suitable for an ion thruster, corresponding to the step gate of the first embodiment and the gate structure of the second embodiment, as shown in fig. 8, the method for determining parameters includes:
using a formula based on the gate parameters of the central region
Calculating the effective acceleration distance of the central area;
wherein leCenterAn effective acceleration distance for the central zone; lgCenterThe gate pitch is the center region; dsThe diameter of the gate hole; t is tsCenterThe gate thickness in the central region.
according to the effective acceleration distance of the central area and the center of the transition areaIon density and electron temperature upstream of the corresponding gate structure using the formula
Calculating the effective acceleration distance of the transition area; wherein leEffective acceleration distance of the transition region, niIs the ion density, T, of the gate structure upstream of the center of the transition regioneIs the electron temperature, n, upstream of the gate structure at the center of the transition regioniCenterAnd TeCenterRespectively the ion density and the electron temperature of the grid upstream at the center of the thruster; the ion density and the electron temperature of the upstream of the corresponding grid structure at the center of the transition region are plasma parameters obtained through numerical simulation and probe diagnosis;
and determining the gate thickness and the gate spacing of the transition region according to the gate parameters of the central region and the effective acceleration distance of the transition region.
Referring to fig. 5, when the screen gate is a step gate and the acceleration gate is a planar gate, a formula is used according to the gate parameter of the central region and the effective acceleration distance of the transition region
Calculating the gate thickness and the gate spacing of the transition region; wherein lgIs the gate pitch of the transition region, taThe gate thickness of the transition region.
Referring to fig. 6, the method specifically includes:
when the screen grid is a plane grid and the accelerating grid is a step grid, the formula is utilized according to the effective accelerating distance of the transition region, the diameter of the grid hole and the thickness of the screen grid
Calculating the grid electrode distance of the transition region; wherein lgIs the gate pitch of the transition region, tsThe thickness of the screen grid;
according to the grid spacing of the transition region and the grid parameter of the central region, using a formula ta＝lgCenter+tsCenter-lgCalculating the thickness of the gate of the transition region; wherein, taThe gate thickness of the transition region.
And step 104, determining the gate parameters of the edge region according to the gate parameters of the transition region and the ion density and the electron temperature of the upstream of the gate structure in the center of the edge region.
The gate parameter determination process of the edge region is the same as that of steps 102-103.
In fig. 7, the screen grid and the accelerating grid both adopt stepped grids, and the convex sides of the two grids are opposite, so that the variation range of the grid pitch can be further expanded, and a proper accelerating electric field can be provided for more uneven plasma in the discharge chamber.
The spacer thickness for the device is determined by the gate spacing between the two gates in the edge-most void-free region through the edge region to the other gate in fig. 5-7.
The method is based on the principle that when the voltage between two grids is VTAnd screen diameter dsAt a constant value, the acceleration capability of the grid to the ions is proportional to
The derivation process is as follows:
ion current density emitted by the plasma upstream of the grid electrode is
Ji＝nievBohm
niIon density upstream of the screen, e is the amount of elementary charge, vBohmBohm is the velocity of ions entering the plasma sheath upstream of the gate, and is the velocity of ions entering the plasma sheath on the gate, commonly referred to as the Bohm velocity, i denotes the ion.
k is Boltzmann constant, TeElectron temperature, m, of the plasma upstream of the gridiIs the ion mass.
Thus, the ion current density upstream of the grid is proportional to
The maximum ion beam current density that the grid can accelerate is
ε0Is a vacuum dielectric constant, VTIs the voltage between two gates, /)eIs the effective acceleration distance of the gate.
lgIs the gate pitch, tsThickness of screen grid, dsScreen diameter.
When V isTAnd dsAt a constant value, the acceleration capability of the grid to the ions is proportional to
Example four
A parameter determination system for a step grid of an ion thruster, the parameter determination system comprising:
the central area grid parameter determining module is used for determining grid parameters at the center of the ion thruster through a thruster beam extraction experiment and taking the grid parameters as grid parameters of the central area of the stepped grid; the grid parameters comprise grid distance, grid thickness and grid hole diameter; the grid spacing is the distance between the central area of the stepped grid and two opposite surfaces of the other grid in the grid structure; the thickness of the grid is the thickness of the central area of the stepped grid;
the central area effective acceleration distance determining module is used for determining the effective acceleration distance of the central area according to the grid parameters of the central area;
the transition region grid parameter determining module is used for determining grid parameters of the transition region according to the effective acceleration distance of the central region and the ion density and the electron temperature of the upstream of the grid structure at the center of the transition region;
and the marginal region grid electrode parameter determining module is used for determining grid electrode parameters of a marginal region according to the grid electrode parameters of the transition region and the ion density and the electron temperature at the upstream of the grid electrode structure in the center of the marginal region.
The transition region gate parameter determination module specifically comprises:
a transition region effective acceleration distance calculation submodule for calculating ion density and electron temperature at upstream of the gate structure corresponding to the center of the transition region according to the effective acceleration distance of the center region
Calculating the effective acceleration distance of the transition area; wherein leEffective acceleration distance of the transition region, niIs the ion density, T, of the gate structure upstream of the center of the transition regioneIs the electron temperature, l, upstream of the gate structure at the center of the transition regioneCenterEffective acceleration distance of the central zone, niCenterAnd TeCenterRespectively the ion density and the electron temperature of the grid upstream at the center of the thruster;
and the transition region grid parameter determining submodule is used for determining the grid thickness and the grid distance of the transition region according to the grid parameter of the central region and the effective acceleration distance of the transition region.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A step grid suitable for an ion thruster is characterized in that,
one side of the stepped grid is stepped, and the other side of the stepped grid is a plane;
the step grid is divided into a central area, a transition area and an edge area along the radial direction; a plurality of grid holes are arranged in the central area, the transition area and the edge area;
the thicknesses of the central area, the transition area and the edge area are sequentially reduced, and the distances from the central area, the transition area and the edge area to the other grid electrode are sequentially increased;
the ion current density of the central area is greater than the upper limit value of the ion current density, the ion current density of the edge area is less than the lower limit value of the ion current density, and the ion current density of the transition area is between the ion current densities of the central area and the edge area.
2. A gate structure of an ion thruster, wherein the gate structure uses the step gate of claim 1, and the gate structure comprises: the grid-type acceleration grid comprises a screen grid and an acceleration grid, wherein at least one of the screen grid and the acceleration grid is a stepped grid.
3. The gate structure of the ion thruster of claim 2, wherein,
when the screen grid is a stepped grid and the accelerating grid is a planar grid, one stepped side of the screen grid faces the accelerating grid;
when the screen grid is a planar grid and the accelerating grid is a stepped grid, one stepped side of the accelerating grid faces the screen grid;
when the screen grid and the accelerating grid are both stepped grids, one stepped side of the screen grid is opposite to one stepped side of the accelerating grid.
4. A method for determining parameters of a step grid suitable for an ion thruster, the method comprising:
determining grid parameters at the center of the ion thruster through a thruster beam extraction experiment, wherein the grid parameters are used as grid parameters of the central area of the stepped grid; the grid parameters comprise grid distance, grid thickness and grid hole diameter; the grid electrode distance is the distance between the central area of the stepped grid electrode and two opposite surfaces of the other grid electrode in the grid electrode structure; the thickness of the grid is the thickness of the central area of the stepped grid;
determining the effective acceleration distance of the central area according to the grid parameters of the central area;
determining gate parameters of the transition region according to the effective acceleration distance of the central region and the ion density and electron temperature of the upstream of the gate structure at the center of the transition region;
and determining the grid parameters of the edge region according to the grid parameters of the transition region and the ion density and the electron temperature of the grid structure upstream in the center of the edge region.
5. The method for determining parameters of a gate structure of an ion thruster according to claim 4, wherein the determining the effective acceleration distance of the central region according to the gate parameters of the central region specifically comprises:
using a formula based on the gate parameters of the central region
Calculating the effective acceleration distance of the central area;
wherein leCenterAn effective acceleration distance for the central zone; lgCenterThe gate pitch is the center region; dsThe diameter of the gate hole; t is tsCenterThe gate thickness in the central region.
6. The method for determining parameters of a gate structure of an ion thruster according to claim 5, wherein the determining the gate parameters of the transition region according to the effective acceleration distance of the central region and the ion density and the electron temperature of the gate structure upstream of the center of the transition region specifically comprises:
according to the effective acceleration distance of the central region and the corresponding grid at the center of the transition regionIon density and electron temperature upstream of the polar structure, using the formula
Calculating the effective acceleration distance of the transition area; wherein leEffective acceleration distance of the transition region, niIs the ion density, T, of the gate structure upstream of the center of the transition regioneIs the electron temperature, n, upstream of the gate structure at the center of the transition regioniCenterAnd TeCenterRespectively the ion density and the electron temperature of the grid upstream at the center of the thruster;
and determining the gate thickness and the gate spacing of the transition region according to the gate parameters of the central region and the effective acceleration distance of the transition region.
7. The method for determining the parameters of the gate structure of the ion thruster according to claim 6, wherein the determining the gate thickness and the gate pitch of the transition region according to the gate parameters of the central region and the effective acceleration distance of the transition region specifically comprises:
when the screen grid is a stepped grid and the accelerating grid is a planar grid, a formula is used according to the grid parameters of the central area and the effective accelerating distance of the transition area
Calculating the gate thickness and the gate spacing of the transition region; wherein lgIs the gate pitch of the transition region, taThe gate thickness of the transition region.
8. The method for determining the parameters of the gate structure of the ion thruster according to claim 6, wherein the determining the gate thickness and the gate pitch of the transition region according to the gate parameters of the central region and the effective acceleration distance of the transition region specifically comprises:
when the screen grid is a plane grid and the accelerating grid is a step grid, the formula is utilized according to the effective accelerating distance of the transition region, the diameter of the grid hole and the thickness of the screen grid
Calculating the grid electrode distance of the transition region; wherein lgIs the gate pitch of the transition region, tsThe thickness of the screen grid;
according to the grid spacing of the transition region and the grid parameter of the central region, using a formula ta＝lgCenter+tsCenter-lgCalculating the thickness of the gate of the transition region; wherein, taThe gate thickness of the transition region.
9. A parameter determination system for a step grid of an ion thruster, the parameter determination system comprising:
the central area grid parameter determining module is used for determining grid parameters at the center of the ion thruster through a thruster beam extraction experiment and taking the grid parameters as grid parameters of the central area of the stepped grid; the grid parameters comprise grid distance, grid thickness and grid hole diameter; the grid electrode distance is the distance between the central area of the stepped grid electrode and two opposite surfaces of the other grid electrode in the grid electrode structure; the thickness of the grid is the thickness of the central area of the stepped grid;
the central area effective acceleration distance determining module is used for determining the effective acceleration distance of the central area according to the grid parameters of the central area;
the transition region grid parameter determining module is used for determining grid parameters of the transition region according to the effective acceleration distance of the central region and the ion density and the electron temperature of the upstream of the grid structure at the center of the transition region;
and the marginal region grid electrode parameter determining module is used for determining grid electrode parameters of a marginal region according to the grid electrode parameters of the transition region and the ion density and the electron temperature at the upstream of the grid electrode structure in the center of the marginal region.
10. The system for determining parameters of a gate structure of an ion thruster of claim 9, wherein the transition region gate parameter determining module specifically comprises:
a transition region effective acceleration distance calculation submodule for calculating a transition region effective acceleration distance based onThe effective acceleration distance of the central region and the ion density and electron temperature of the corresponding gate structure upstream of the center of the transition region are calculated using the formula
Calculating the effective acceleration distance of the transition area; wherein leEffective acceleration distance of the transition region, niIs the ion density, T, of the gate structure upstream of the center of the transition regioneIs the electron temperature, l, upstream of the gate structure at the center of the transition regioneCenterEffective acceleration distance of the central zone, niCenterAnd TeCenterRespectively the ion density and the electron temperature of the grid upstream at the center of the thruster;
and the transition region grid parameter determining submodule is used for determining the grid thickness and the grid distance of the transition region according to the grid parameter of the central region and the effective acceleration distance of the transition region.
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