CN114609812B - Substrate detection method and substrate detection jig - Google Patents

Substrate detection method and substrate detection jig Download PDF

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CN114609812B
CN114609812B CN202210373085.2A CN202210373085A CN114609812B CN 114609812 B CN114609812 B CN 114609812B CN 202210373085 A CN202210373085 A CN 202210373085A CN 114609812 B CN114609812 B CN 114609812B
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tft device
substrate
test terminal
impedance
negative pressure
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CN114609812A (en
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白一晨
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant

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  • Liquid Crystal (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)

Abstract

The application discloses a substrate detection method, a substrate detection tool, this substrate detection method includes: providing a substrate to be detected and a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module; the negative pressure module is connected with the TFT device of the substrate to be detected, and the negative pressure module is used for enabling the TFT device to be turned off more tightly, so that the electric leakage of the TFT device is reduced; the negative pressure module is used for reducing the electric leakage of the TFT device, and then the detection module is used for measuring the target parameter between the first test terminal and the second test terminal, so that the influence of the electric leakage of the TFT device on the target parameter is reduced, and the misjudgment of the target parameter is avoided.

Description

Substrate detection method and substrate detection jig
Technical Field
The application relates to the technical field of detection and measurement, in particular to a substrate detection method and a substrate detection jig.
Background
After the conventional array substrate is produced, target parameters such as impedance among different signals can be measured through a test terminal positioned in the edge area of the conventional array substrate, so that whether the substrate is short-circuited or not is judged; in the impedance test process by adopting the substrate detection jig such as a multimeter, the common impedance between the signal VDD and the signal Vref is found to be smaller, and when the impedance is smaller than 10 6 In European style, it is considered that there is a short circuit abnormality.
Since the impedance between the signal VDD and the signal Vref is generally affected by the leakage of the TFT devices connected to the signal VDD and the signal Vref, the measured impedance value may be smaller than the actual impedance value, resulting in misjudgment of the impedance.
Therefore, the existing substrate detection method has the technical problem of misjudgment of target parameters.
Disclosure of Invention
The embodiment of the application provides a substrate detection method and a substrate detection jig, which can solve the technical problem that the existing substrate detection method has misjudgment of target parameters.
The embodiment of the application provides a substrate detection method, which comprises the following steps:
providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device, a first test terminal and a second test terminal, and the TFT device is respectively connected with the first test terminal and the second test terminal;
providing a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module;
the negative pressure module is connected with the TFT device, so that the TFT device is turned off more tightly by using the negative pressure module, and the electric leakage of the TFT device is reduced;
and the detection module is respectively connected with the first test terminal and the second test terminal, and is used for measuring target parameters between the first test terminal and the second test terminal.
Optionally, in some embodiments of the present application, the substrate detection method is a substrate impedance detection method, and the target parameter is a target impedance.
Optionally, in some embodiments of the present application, the substrate impedance detection method further includes: the first test terminal is connected to a VDD signal and the second test terminal is connected to a Vref signal.
Optionally, in some embodiments of the present application, the TFT device includes at least a first TFT device and a second TFT device, where the first TFT device is directly connected to the first test terminal, the second TFT device is directly connected to the second test terminal, and a power of the second TFT device is greater than a power of the first TFT device.
Optionally, in some embodiments of the present application, the first TFT device, the second TFT device, the first test terminal, and the second test terminal are connected in series.
Optionally, in some embodiments of the present application, the substrate impedance detection method further includes: the negative pressure module is respectively connected with the first TFT device and the second TFT device, so that the first TFT device and the second TFT device are turned off more tightly, and the electric leakage of the first TFT device and the second TFT device is reduced.
Optionally, in some embodiments of the present application, the substrate impedance detection method further includes: the negative pressure module is connected with the first TFT device or the second TFT device, so that the first TFT device or the second TFT device is turned off more tightly, and the electric leakage of the first TFT device or the second TFT device is reduced.
Optionally, in some embodiments of the present application, the substrate impedance detection method further includes: the target impedance is measured by the detection component when the target impedance is greater than 10 6 In Europe, the substrate to be detected is free of short circuit; when the impedance is less than 10 6 And in European time, the substrate to be detected has a short-circuit abnormality.
The embodiment of the application provides a substrate detection jig, which comprises a detection module and a negative pressure module, wherein the detection module is used for measuring target parameters, and the negative pressure module is used for enabling a TFT device of a substrate to be detected to be turned off more tightly, so that detection misjudgment caused by electric leakage of the TFT device is reduced; the substrate detection jig is used for realizing the substrate detection method of any one of the above.
Optionally, in some embodiments of the present application, the substrate detection tool is a substrate impedance detection tool, and the target parameter is impedance.
The beneficial effects are that: the negative pressure module is used for enabling the TFT device to be turned off more tightly, reducing the electric leakage of the TFT device, and then the detection module is used for measuring the target parameter between the first test terminal and the second test terminal, so that the influence of the electric leakage of the TFT device on the target parameter is reduced, and the misjudgment of the target parameter is avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a substrate detection method provided herein;
fig. 2 is a schematic diagram of a pixel circuit in a substrate to be detected provided in the present application;
FIG. 3 is an equivalent diagram of a first circuit between a first test terminal and a second test terminal in a substrate to be tested provided herein;
fig. 4 is an equivalent diagram of a second circuit between a first test terminal and a second test terminal in a substrate to be tested provided in the present application;
fig. 5 is a schematic diagram of a substrate detection tool provided in the present application.
Reference numerals illustrate:
Figure BDA0003589343490000031
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and explanation only and is not intended to limit the present application. In this application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and specifically the orientation of the drawing figures; while "inner" and "outer" are for the outline of the device.
In the existing substrate detection method, when target parameters among different test terminals are checked, particularly when impedance between a VDD signal and a Vref signal is detected, the impedance is easily influenced by leakage of a TFT device, and misjudgment of the impedance is caused.
Therefore, it is desirable to provide a substrate detection method and a substrate detection jig, which can reduce the influence of the leakage of the TFT device on the misjudgment of the impedance.
Referring to fig. 1, the present application provides a substrate detection method, which includes:
s1: providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device 10, a first test terminal 20 and a second test terminal 30, and the TFT device 10 is respectively connected with the first test terminal 20 and the second test terminal 30;
s2: providing a substrate detection jig 1, wherein the substrate detection jig 1 at least comprises a negative pressure module 40 and a detection module 50;
s3: the negative pressure module 40 is connected with the TFT device 10, so that the TFT device 10 is turned off more tightly by utilizing the negative pressure module 40, and the electric leakage of the TFT device 10 is reduced;
s4: the first test terminal 20 and the second test terminal 30 are connected with the detection module 50 respectively, and a target parameter between the first test terminal 20 and the second test terminal 30 is measured by the detection module 50.
It can be appreciated that for an N-channel enhancement mode TFT device, the N-channel enhancement mode TFT device 10 is turned off when it is smaller than the threshold voltage, and turned on when it is larger than the threshold voltage, and turned off more tightly by increasing the threshold voltage.
In this embodiment, the negative pressure module 40 turns off the TFT device 10 more tightly, so as to reduce the leakage current of the TFT device 10, and then the detection module 50 is used to measure the target parameter between the first test terminal 20 and the second test terminal 30, so that the influence of the leakage current of the TFT device 10 on the target parameter is reduced, and the erroneous judgment of the target parameter is avoided.
The technical solutions of the present application will now be described with reference to specific embodiments.
In one embodiment, the substrate detection method is a substrate impedance detection method, and the target parameter is a target impedance.
The following description will be given by taking a target parameter between a VDD signal and a Vref signal of the array substrate as an example, and specifically, the target parameter may be a target impedance; but the present application also includes at least measurement of other target parameters between other different signal terminals, which is not specifically limited in this application.
In one embodiment, the substrate impedance detection method further includes: the first test terminal 20 is connected to the VDD signal and the second test terminal 30 is connected to the Vref signal.
Referring to fig. 2 and 3, the array substrate includes a pixel circuit, which may be a 3T1C circuit; the first test terminal 20 and the second test terminal 30 may be connected to any one of signals such as Vscan, vsensing, vdata, vref, VDD, VSS, respectively; and the first test terminal 20 and the second test terminal 30 are connected to different signals.
It will be appreciated that, by detecting the first test terminal 20 and the second test terminal 30 by the substrate detection jig 1, a target parameter between the VDD signal and the Vref signal may be measured, and the target parameter may be a target impedance.
It will be appreciated that the detection module 50 may be used only to first measure the target impedance between the VDD signal and the Vref signal when the target impedance is less than 10 6 In European time, the negative pressure module 40 is utilized to provide negative pressure for the TFT device 10 positioned on the line between the VDD signal and the Vref signal, so that the TFT device 10 is turned off more tightly, the electric leakage of the TFT device is reduced, and the misjudgment of the electric leakage of the TFT device 10 on the target impedance is further reduced; after the negative pressure module 40 turns off the TFT device 10 more tightly, the detection module 50 is used to measure the target impedance between the VDD signal and the Vref signal for the second time, and if the target impedance is smaller than 10 6 European, then indicate that there is a short circuit between VDD signal and Vref signal; if the target impedance is greater than 10 6 European meaning that there is no short between VDD and Vref signals and determining that the first pair target impedance is less than 10 6 The European judgment is a misjudgment.
It should be noted that referring to fig. 3, the TFT devices 10 connected to the first test terminal 20 and the second test terminal 30 and located on the signal transmission line therebetween may include not only the first TFT device 101 and the second TFT device 102, but also more TFT devices 10, specifically how many TFT devices 10 the pixel circuit includes, for example, the pixel circuit may further include: 2T1C, 4T1C, 7T1C, etc.
In this embodiment, the target parameter between the VDD signal and the Vref signal is specifically measured, and the negative pressure module 40 reduces the influence of the TFT device 10 on the target parameter between the VDD signal and the Vref signal, so as to reduce the error of the measured target parameter and avoid erroneous judgment.
In one embodiment, referring to fig. 3, the TFT device 10 includes at least a first TFT device 101 and a second TFT device 102, the first TFT device 101 is directly connected to the first test terminal 20, the second TFT device 102 is directly connected to the second test terminal 30, and the power of the second TFT device 102 is greater than the power of the first TFT device 101.
It will be appreciated that referring to fig. 4, if the power of the second TFT device 102 is greater than that of the first TFT device 101, the leakage of the second TFT device 102 has a greater influence on the target parameter between the VDD signal and the Vref signal.
Note that the negative pressure may be provided only to the first TFT device 101 or the second TFT device 102, reducing the influence of the leakage measurement result of the first TFT device 101 or the second TFT device 102.
In one embodiment, the first TFT device 101, the second TFT device 102, the first test terminal 20, and the second test terminal 30 are connected in series.
In one embodiment, the substrate impedance detection method further includes: the negative pressure module 40 is respectively connected with the first TFT device 101 and the second TFT device 102, so that the first TFT device 101 and the second TFT device 102 are turned off more tightly, and the electric leakage of the first TFT device 101 and the second TFT device 102 is reduced.
In one embodiment, the substrate impedance detection method further includes: the negative pressure module 40 is connected with the first TFT device 101 or the second TFT device 102, so that the first TFT device 101 or the second TFT device 102 is turned off more tightly, and the electric leakage of the first TFT device 101 or the second TFT device 102 is reduced.
In one embodiment, the substrate impedance detection method further includes: the target impedance is measured by the detection component when the target impedance is greater than 10 6 In Europe, the substrate to be detected is free of short circuit; when the impedance is less than 10 6 And in European time, the substrate to be detected has a short-circuit abnormality.
Specifically, four substrates are provided, including a first substrate, a second substrate, a third substrate and a fourth substrate, wherein the first substrate and the second substrate are transparent MLED substrates, and the third substrate and the fourth substrate are non-transparent MLED substrates, and the following table is specifically referred to for illustration;
it should be noted that judgmentThe impedance of the open-and-closed circuit needs to be at least greater than 10 6 Europe, i.e., 1M Europe.
Transparent MLED First substrate, r=397 ohms Second substrate, r=0.56K ohms
V＝-1.5V 220K Europe 1.3M Europe
V＝-3V 2.3M Europe 2M Europe
Non-transparent MLED Third substrate, r=800 ohms Fourth substrate, r=24 ohms
V＝-6V 19K Europe 17K Europe
V＝-8V 2.0M Europe 0.4M Europe
Wherein, for the first substrate, before negative voltage is not provided to the TFT device 10 by the negative voltage module 40, the resistance between the VDD signal and the Vref signal is measured to be 397 ohms, when a voltage of-1.5V is provided, the resistance between the VDD signal and the Vref signal is measured to be 220K ohms, and when a voltage of-3V is provided, the resistance between the VDD signal and the Vref signal is measured to be 2.3M ohms; when negative voltage-3V is provided, the resistance between the VDD signal and the Vref signal is 2.3 Mohms; that is, 2.3M ohms is greater than 1M ohms, and the first substrate is judged to have no short circuit;
wherein, for the second substrate, before negative voltage is not supplied to the TFT device 10 through the negative voltage module 40, the resistance between the VDD signal and the Vref signal is measured to be 0.56 ohms, when a voltage of-1.5V is supplied, the resistance between the VDD signal and the Vref signal is measured to be 1.3M ohms, and when a voltage of-3V is supplied, the resistance between the VDD signal and the Vref signal is measured to be 2M ohms; when negative voltage-3V is provided, the resistance between the VDD signal and the Vref signal is 2 Mohms; that is, 2M ohms is larger than 1M ohms, and the first substrate is judged to have no short circuit;
wherein, for the third substrate, before negative voltage is not supplied to the TFT device 10 through the negative voltage module 40, the resistance between the VDD signal and the Vref signal is measured to be 800 ohms, when a voltage of-6V is supplied, the resistance between the VDD signal and the Vref signal is measured to be 19K ohms, and when a voltage of-8V is supplied, the resistance between the VDD signal and the Vref signal is measured to be 2.3M ohms; when negative pressure of-8V is provided, the resistance between the VDD signal and the Vref signal is 2 Mohms; that is, 2M ohms is larger than 1M ohms, and the first substrate is judged to have no short circuit;
wherein, for the fourth substrate, before negative voltage is not supplied to the TFT device 10 through the negative voltage module 40, the resistance between the VDD signal and the Vref signal is measured to be 397 ohms, when a voltage of-6V is supplied, the resistance between the VDD signal and the Vref signal is measured to be 220K ohms, and when a voltage of-8V is supplied, the resistance between the VDD signal and the Vref signal is measured to be 2.3M ohms; when negative pressure of-8V is provided, the resistance between the VDD signal and the Vref signal is 0.4M ohm, namely 0.4M ohm is less than 1M ohm; and judging that the first substrate has a short circuit.
In this embodiment, by providing negative pressure to the TFT device 10, the influence of the TFT device 10 on the target impedance of the line between the VDD signal and the Vref signal is reduced, and at this time, if the measured target impedance of the line between the VDD signal and the Vref signal is greater than 1M ohms, it can be determined that there is no short circuit in the line between the VDD signal and the Vref signal; if the measured target impedance of the line between the VDD signal and the Vref signal is less than 1M ohms, it can be determined that a short circuit exists in the line between the VDD signal and the Vref signal.
Referring to fig. 5, the substrate detection jig 1 provided in the embodiment of the present application includes a detection module 50 and a negative pressure module 40, where the detection module 50 is used to measure a target parameter, and the negative pressure module 40 is used to make the TFT device 10 of the substrate to be detected turn off more tightly, so as to reduce detection erroneous judgment caused by leakage of the TFT device 10; the substrate detection jig 1 is used for realizing the substrate detection method according to any one of the above embodiments.
In one embodiment, the substrate detection tool 1 is a substrate impedance detection tool 1, and the target parameter is impedance.
The embodiment of the application also provides an array substrate, which comprises a display area and a non-display area surrounding the display area, wherein a negative pressure circuit is arranged on the array substrate in the non-display area and is at least connected with a pixel circuit, and the pixel circuit at least comprises a TFT device 10, wherein the TFT device 10 connected with the negative pressure circuit is turned off more tightly through the negative pressure circuit.
The array substrate may be the substrate to be detected.
It can be understood that, by arranging the negative pressure circuit at the edge of the non-display area of the array substrate, before the detection jig 1 is used for measuring the testing terminals on the array substrate, the TFT device 10 is turned off more tightly by using the negative pressure circuit, so that the influence of the leakage of the TFT device 10 on the measurement structure is reduced, and the misjudgment is reduced.
In one embodiment, the pixel circuit may be a 3T1C circuit.
The impedance between the VDD signal and the Vref signal is affected by at least the first TFT device 101 and the second TFT device 102.
It can be appreciated that the leakage of the first TFT device 101 and/or the second TFT device 102 has an influence on the impedance between the VDD signal and the Vref signal, and when the leakage of the first TFT device 101 and/or the second TFT device 102 is reduced, the influence of the leakage of the TFT device 10 on the detected target parameter can be alleviated.
The application also provides a display panel, a display module, a display device, display panel the display module with display device all includes above-mentioned array substrate, and this is unnecessary to describe again.
The substrate detection method provided in this embodiment includes: providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device, a first test terminal and a second test terminal, and the TFT device is respectively connected with the first test terminal and the second test terminal; providing a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module; the negative pressure module is connected with the TFT device, so that the TFT device is turned off more tightly by using the negative pressure module, and the electric leakage of the TFT device is reduced; the detection module is respectively connected with the first test terminal and the second test terminal, and is used for measuring target parameters between the first test terminal and the second test terminal; the negative pressure module is used for enabling the TFT device to be turned off more tightly, reducing the electric leakage of the TFT device, and then the detection module is used for measuring the target parameter between the first test terminal and the second test terminal, so that the influence of the electric leakage of the TFT device on the target parameter is reduced, and the misjudgment of the target parameter is avoided.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The substrate detection method and the substrate detection jig provided by the embodiments of the present application are described in detail, and specific examples are applied to illustrate the principles and the embodiments of the present application, and the description of the above embodiments is only used to help understand the method and the core idea of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.

Claims (9)

1. A substrate inspection method, comprising:
providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device, a first test terminal and a second test terminal, the TFT device is respectively connected with the first test terminal and the second test terminal, the TFT device at least comprises a first TFT device and a second TFT device, the first TFT device is directly connected with the first test terminal, the second TFT device is directly connected with the second test terminal, and the power of the second TFT device is larger than that of the first TFT device;
providing a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module;
the negative pressure module is connected with the TFT device, so that the TFT device is turned off more tightly by using the negative pressure module, and the electric leakage of the TFT device is reduced;
and the detection module is respectively connected with the first test terminal and the second test terminal, and is used for measuring target parameters between the first test terminal and the second test terminal.
2. The substrate detection method according to claim 1, wherein the substrate detection method is a substrate impedance detection method, and the target parameter is a target impedance.
3. The substrate detection method according to claim 2, wherein the substrate impedance detection method further comprises: connecting the first test terminal with V DD A signal for connecting the second test terminal with V ref A signal.
4. The substrate inspection method according to claim 3, wherein the first TFT device, the second TFT device, the first test terminal, and the second test terminal are connected in series.
5. The substrate detection method according to claim 4, wherein the substrate impedance detection method further comprises: the negative pressure module is respectively connected with the first TFT device and the second TFT device, so that the first TFT device and the second TFT device are turned off more tightly, and the electric leakage of the first TFT device and the second TFT device is reduced.
6. The substrate detection method according to claim 4, wherein the substrate impedance detection method further comprises: the negative pressure module is connected with the first TFT device or the second TFT device, so that the first TFT device or the second TFT device is turned off more tightly, and the electric leakage of the first TFT device or the second TFT device is reduced.
7. The substrate detection method according to claim 2, wherein the substrate impedance detection method further comprises: the target impedance is measured by the detection component when the target impedance is greater than 10 6 In Europe, the substrate to be detected is free of short circuit; when the impedance is less than 10 6 And in European time, the substrate to be detected has a short-circuit abnormality.
8. The substrate detection jig is characterized by comprising a detection module and a negative pressure module, wherein the detection module is used for measuring target parameters, and the negative pressure module is used for enabling a TFT device of a substrate to be detected to be turned off more tightly, so that detection misjudgment caused by electric leakage of the TFT device is reduced; the substrate inspection jig is used for realizing the substrate inspection method according to any one of claims 1 to 7.
9. The substrate inspection jig of claim 8, wherein the substrate inspection jig is a substrate impedance inspection jig and the target parameter is impedance.
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