CN114609812A - Substrate detection method and substrate detection jig - Google Patents

Substrate detection method and substrate detection jig Download PDF

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CN114609812A
CN114609812A CN202210373085.2A CN202210373085A CN114609812A CN 114609812 A CN114609812 A CN 114609812A CN 202210373085 A CN202210373085 A CN 202210373085A CN 114609812 A CN114609812 A CN 114609812A
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substrate
tft device
test terminal
detection
impedance
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CN114609812B (en
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白一晨
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant

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  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)

Abstract

The application discloses a substrate detection method and a substrate detection jig, wherein the substrate detection method comprises the following steps: providing a substrate to be detected and a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module; the negative pressure module is connected with the TFT device of the substrate to be detected, and the negative pressure module is utilized to enable the TFT device to be more tightly turned off, so that the electric leakage of the TFT device is reduced; the negative pressure module is used for reducing the electric leakage of the TFT device, and then the detection module is used for measuring the target parameter between the first test terminal and the second test terminal, so that the influence of the electric leakage of the TFT device on the target parameter is reduced, and the misjudgment of the target parameter is avoided.

Description

Substrate detection method and substrate detection jig
Technical Field
The application relates to the technical field of detection and measurement, in particular to a substrate detection method and a substrate detection jig.
Background
After the existing array substrate is produced, target parameters such as impedance among different signals can be measured through a test terminal positioned in the edge area of the existing array substrate, so that whether the substrate is short-circuited or not is judged; when a substrate detection tool such as a universal meter is adopted to carry out impedance test, the general impedance between a signal VDD and a signal Vref is found to be small, and when the impedance is smaller than 106When the voltage is in Europe, it is determined that there is a short circuit abnormality.
Since the impedance between the signal VDD and the signal Vref is usually affected by the leakage of the TFT devices connected to the two, the measured impedance value may be smaller than the actual impedance value, which may cause misjudgment of the impedance.
Therefore, the conventional substrate detection method has the technical problem of misjudgment of target parameters.
Disclosure of Invention
The embodiment of the application provides a substrate detection method and a substrate detection jig, which can solve the technical problem that the target parameters are misjudged in the existing substrate detection method.
The embodiment of the application provides a substrate detection method, which comprises the following steps:
providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device, a first test terminal and a second test terminal, and the TFT device is respectively connected with the first test terminal and the second test terminal;
providing a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module;
the negative pressure module is connected with the TFT device, so that the TFT device is more tightly turned off by the negative pressure module, and the electric leakage of the TFT device is reduced;
the detection module is connected with the first test terminal and the second test terminal respectively, and the detection module is used for measuring target parameters between the first test terminal and the second test terminal.
Optionally, in some embodiments of the present application, the substrate detection method is a substrate impedance detection method, and the target parameter is a target impedance.
Optionally, in some embodiments of the present application, the substrate impedance detecting method further includes: and connecting the first test terminal with a VDD signal, and connecting the second test terminal with a Vref signal.
Optionally, in some embodiments of the present application, the TFT device includes at least a first TFT device and a second TFT device, the first TFT device is directly connected to the first test terminal, the second TFT device is directly connected to the second test terminal, and a power of the second TFT device is greater than a power of the first TFT device.
Optionally, in some embodiments of the present application, the first TFT device, the second TFT device, the first test terminal, and the second test terminal are connected in series.
Optionally, in some embodiments of the present application, the substrate impedance detecting method further includes: the negative pressure module is respectively connected with the first TFT device and the second TFT device, so that the first TFT device and the second TFT device are more tightly turned off, and the electric leakage of the first TFT device and the second TFT device is reduced.
Optionally, in some embodiments of the present application, the substrate impedance detecting method further includes: the negative voltage module is connected with the first TFT device or the second TFT device, so that the first TFT device or the second TFT device is turned off more tightly, and the electric leakage of the first TFT device or the second TFT device is reduced.
Optionally, in some embodiments of the present application, the substrate impedance detecting method further includes: measuring the target impedance by the detection component when the target impedance is greater than 106In Europe, the substrate to be detected has no short circuit; when the impedance is less than 106And in Europe, the substrate to be detected has short circuit abnormity.
The embodiment of the application provides a substrate detection jig, which comprises a detection module and a negative pressure module, wherein the detection module is used for measuring target parameters, and the negative pressure module is used for enabling a TFT (thin film transistor) device of a substrate to be detected to be turned off more tightly, so that detection misjudgment caused by electric leakage of the TFT device is reduced; the substrate detection jig is used for realizing any one of the substrate detection methods.
Optionally, in some embodiments of the present application, the substrate detection tool is a substrate impedance detection tool, and the target parameter is impedance.
Has the advantages that: the TFT device is turned off more tightly through the negative pressure module, electric leakage of the TFT device is reduced, then the target parameter between the first test terminal and the second test terminal is measured through the detection module, the influence of the electric leakage of the TFT device on the target parameter is reduced, and misjudgment of the target parameter is avoided.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart of a substrate inspection method provided herein;
FIG. 2 is a schematic diagram of a pixel circuit in a substrate to be inspected provided in the present application;
fig. 3 is a first circuit equivalent diagram between a first test terminal and a second test terminal in a substrate to be tested provided by the present application;
fig. 4 is a second circuit equivalent diagram between a first test terminal and a second test terminal in a substrate to be tested provided by the present application;
fig. 5 is a schematic view of a substrate detection jig provided in the present application.
Description of reference numerals:
Figure BDA0003589343490000031
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
In the conventional substrate detection method, when target parameters between different test terminals are detected, particularly when impedance between a VDD signal and a Vref signal is detected, the impedance is easily affected by leakage of a TFT device, and thus impedance misjudgment is caused.
Therefore, it is desirable to provide a substrate inspection method and a substrate inspection tool, which can reduce the influence of the leakage current of the TFT device on the misjudgment of the impedance.
Referring to fig. 1, the present application provides a substrate inspection method, including:
s1: providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device 10, a first test terminal 20 and a second test terminal 30, and the TFT device 10 is respectively connected with the first test terminal 20 and the second test terminal 30;
s2: providing a substrate detection jig 1, wherein the substrate detection jig 1 at least comprises a negative pressure module 40 and a detection module 50;
s3: the negative pressure module 40 is connected with the TFT device 10, and the TFT device 10 is more tightly turned off by the negative pressure module 40, so that the electric leakage of the TFT device 10 is reduced;
s4: the detection module 50 is connected to the first test terminal 20 and the second test terminal 30, respectively, and the detection module 50 is used to measure a target parameter between the first test terminal 20 and the second test terminal 30.
It will be appreciated that for an N-channel enhancement mode TFT device, the N-channel enhancement mode TFT device 10 is turned off when less than a threshold voltage and turned on when greater than the threshold voltage, and may be turned off more tightly by increasing the threshold voltage.
In this embodiment, the negative voltage module 40 turns off the TFT device 10 more tightly, so as to reduce the leakage of the TFT device 10, and then the detection module 50 measures the target parameter between the first test terminal 20 and the second test terminal 30, so as to reduce the influence of the leakage of the TFT device 10 on the target parameter and avoid the misjudgment of the target parameter.
The technical solution of the present application will now be described with reference to specific embodiments.
In one embodiment, the substrate detection method is a substrate impedance detection method, and the target parameter is a target impedance.
The following description takes the measurement of a target parameter between the VDD signal and the Vref signal of the array substrate as an example, and specifically, the target parameter may be a target impedance; however, the present application also at least includes the measurement of other target parameters between different signal terminals, and the present application is not limited specifically.
In one embodiment, the substrate impedance detection method further includes: the first test terminal 20 is connected to a VDD signal, and the second test terminal 30 is connected to a Vref signal.
Referring to fig. 2 and 3, the array substrate includes a pixel circuit, which may be a 3T1C circuit; the first test terminal 20 and the second test terminal 30 may be connected to any one of signals such as Vscan, Vsensing, Vdata, Vref, VDD, and VSS; and the first test terminal 20 and the second test terminal 30 are connected to different signals.
It can be understood that, by detecting the first test terminal 20 and the second test terminal 30 through the substrate detection fixture 1, a target parameter between the VDD signal and the Vref signal can be measured, and the target parameter can be a target impedance.
It is understood that the detection module 50 may be used to measure the target impedance between the VDD signal and the Vref signal for the first time, when the target impedance is less than 106In Europe, the negative pressure module 40 is used for providing negative pressure for the TFT device 10 on the line between the VDD signal and the Vref signal, so that the TFT device 10 is more tightly turned off, the electric leakage of the TFT device is reduced, and the misjudgment of the electric leakage of the TFT device 10 on the target impedance is further reduced; after the negative module 40 turns off the TFT device 10 more tightly, the detection module 50 is used to measure the target impedance between the VDD signal and the Vref signal for the second time, and at this time, if the target impedance is still less than 106Euro, the short circuit exists between the VDD signal and the Vref signal; if the target impedance is greater than 106Euro, it means there is no short circuit between VDD signal and Vref signal, and the first time is determinedTo target impedance less than 106The judgment of europe is a false judgment.
It should be noted that, referring to fig. 3, the TFT device 10 connected to the first test terminal 20 and the second test terminal 30 and located on the signal transmission line therebetween may include not only the first TFT device 101 and the second TFT device 102, but also more TFT devices 10, specifically, how many TFT devices 10 a pixel circuit includes, for example, the pixel circuit may also be: 2T1C, 4T1C, 7T1C, and the like.
In this embodiment, specifically, the target parameter between the VDD signal and the Vref signal is measured, the negative voltage module 40 reduces the influence of the TFT device 10 on the target parameter between the VDD signal and the Vref signal, reduces the error of the measured target parameter, and avoids erroneous determination.
In one embodiment, referring to fig. 3, the TFT device 10 includes at least a first TFT device 101 and a second TFT device 102, the first TFT device 101 is directly connected to the first test terminal 20, the second TFT device 102 is directly connected to the second test terminal 30, and the power of the second TFT device 102 is greater than that of the first TFT device 101.
It can be understood that, referring to fig. 4, the power of the second TFT device 102 is greater than the power of the first TFT device 101, and the leakage of the second TFT device 102 has a greater influence on the target parameter between the VDD signal and the Vref signal.
It should be noted that, only the first TFT device 101 or the second TFT device 102 may be provided with a negative voltage, so as to reduce the influence of the leakage measurement result of the first TFT device 101 or the second TFT device 102.
In one embodiment, the first TFT device 101, the second TFT device 102, the first test terminal 20, and the second test terminal 30 are connected in series.
In one embodiment, the substrate impedance detection method further includes: the negative voltage module 40 is respectively connected with the first TFT device 101 and the second TFT device 102, so that the first TFT device 101 and the second TFT device 102 are turned off more tightly, and electric leakage of the first TFT device 101 and the second TFT device 102 is reduced.
In one embodiment, the substrate impedance detection method further includes: the negative voltage module 40 is connected with the first TFT device 101 or the second TFT device 102, so that the first TFT device 101 or the second TFT device 102 is turned off more tightly, and leakage of the first TFT device 101 or the second TFT device 102 is reduced.
In one embodiment, the substrate impedance detection method further comprises: measuring the target impedance by the detection component when the target impedance is greater than 106In Europe, the substrate to be detected has no short circuit; when the impedance is less than 106And in Europe, the substrate to be detected has short circuit abnormity.
Specifically, four substrates are provided, including a first substrate, a second substrate, a third substrate and a fourth substrate, wherein the first substrate and the second substrate are transparent MLED substrates, and the third substrate and the fourth substrate are non-transparent MLED substrates, which are specifically referred to the following tables;
it should be noted that the impedance for judging no short circuit needs to be at least more than 106Europe, 1M Europe.
Transparent MLED A first substrate, R ═ 397 ohm A second substrate, R is 0.56K ohm
V＝-1.5V 220K ohm 1.3M ohm
V＝-3V 2.3M ohm 2M ohm
Non-transparent MLED Third substrate, R is 800 ohm Fourth substrate, R is 24 ohm
V＝-6V 19K ohm 17K ohm
V＝-8V 2.0M ohm 0.4M ohm
Wherein, for the first substrate, before the TFT device 10 is not applied with the negative voltage by the negative voltage module 40, the resistance between the VDD signal and the Vref signal is measured to be 397 ohms, when the voltage of-1.5V is applied, the resistance between the VDD signal and the Vref signal is measured to be 220K ohms, when the voltage of-3V is applied, the resistance between the VDD signal and the Vref signal is measured to be 2.3M ohms; when negative voltage of-3V is provided, the resistance between the VDD signal and the Vref signal is 2.3M ohm; namely 2.3M ohm is larger than 1M ohm, judging that the first substrate does not have the condition of short circuit;
wherein, for the second substrate, before the TFT device 10 is not applied with the negative voltage by the negative voltage module 40, the resistance between the VDD signal and the Vref signal is measured to be 0.56 ohms, when the voltage of-1.5V is applied, the resistance between the VDD signal and the Vref signal is measured to be 1.3 mohm, when the voltage of-3V is applied, the resistance between the VDD signal and the Vref signal is measured to be 2 mohm; when negative voltage of-3V is provided, the resistance between the VDD signal and the Vref signal is 2M ohm; namely 2M ohm is larger than 1M ohm, and the first substrate is judged to have no short circuit;
wherein, for the third substrate, before the TFT device 10 is supplied with the negative voltage through the negative voltage module 40, a resistance between the VDD signal and the Vref signal is measured to be 800 ohms, when the voltage of-6V is supplied, a resistance between the VDD signal and the Vref signal is measured to be 19K ohms, and when the voltage of-8V is supplied, a resistance between the VDD signal and the Vref signal is measured to be 2.3M ohms; when negative voltage of-8V is provided, the resistance between the VDD signal and the Vref signal is 2M ohm; that is, 2M ohm is larger than 1M ohm, and the first substrate is judged to have no short circuit;
wherein, for the fourth substrate, before the TFT device 10 is not applied with the negative voltage by the negative voltage module 40, the resistance between the VDD signal and the Vref signal is measured to be 397 ohms, when the voltage of-6V is applied, the resistance between the VDD signal and the Vref signal is measured to be 220K ohms, when the voltage of-8V is applied, the resistance between the VDD signal and the Vref signal is measured to be 2.3M ohms; when negative voltage of-8V is provided, the resistance between the VDD signal and the Vref signal is 0.4M ohm, namely 0.4M ohm is less than 1M ohm; and judging that the first substrate has a short circuit.
In the embodiment, the TFT device 10 is provided with a negative voltage to reduce the influence of the TFT device 10 on the target impedance of the line between the VDD signal and the Vref signal, and at this time, if the measured target impedance of the line between the VDD signal and the Vref signal is greater than 1M ohm, it can be determined that there is no short circuit in the line between the VDD signal and the Vref signal; if the measured target impedance of the line between the VDD signal and the Vref signal is less than 1 Mhm, the short circuit of the line between the VDD signal and the Vref signal can be judged.
Referring to fig. 5, the substrate detection jig 1 provided in the embodiment of the present application includes a detection module 50 and a negative pressure module 40, where the detection module 50 is used to measure a target parameter, and the negative pressure module 40 is used to turn off a TFT device 10 of a substrate to be detected more tightly, so as to reduce detection misjudgment caused by leakage of the TFT device 10; the substrate detection jig 1 is used for implementing the substrate detection method according to any one of the embodiments.
In one embodiment, the substrate detection tool 1 is a substrate impedance detection tool 1, and the target parameter is impedance.
The embodiment of the application further provides an array substrate, the array substrate includes the display area, centers on the non-display area that the display area set up the array substrate in non-display area is provided with negative voltage circuit, negative voltage circuit is connected with a pixel circuit at least, pixel circuit includes a TFT device 10 at least, wherein, through negative voltage circuit is used for making the TFT device 10 that links to each other turn off tighter.
The array substrate may be the substrate to be detected.
It can be understood that, by arranging the negative voltage circuit at the edge of the non-display area of the array substrate, before the detection jig 1 is used for measuring the test terminals on the array substrate, the TFT device 10 is turned off more tightly by using the negative voltage circuit, so that the influence of the leakage of the TFT device 10 on the measurement structure is reduced, and the misjudgment is reduced.
In one embodiment, the pixel circuit may be a 3T1C circuit.
Wherein the impedance between the VDD signal and the Vref signal is affected by at least the first TFT device 101 and the second TFT device 102.
It is understood that the first TFT device 101 and/or the second TFT device 102 leakage has an effect on the impedance between the VDD signal and the Vref signal, and when the first TFT device 101 and/or the second TFT device 102 leakage is reduced, the detected target parameter can be relieved from the effect of the TFT device 10 leakage.
The application also provides a display panel, a display module assembly and a display device, the display panel the display module assembly with the display device all include above-mentioned array substrate, and this here is no longer repeated.
The substrate detection method provided by the embodiment comprises the following steps: providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device, a first test terminal and a second test terminal, and the TFT device is respectively connected with the first test terminal and the second test terminal; providing a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module; the negative pressure module is connected with the TFT device, so that the TFT device is more tightly turned off by the negative pressure module, and the electric leakage of the TFT device is reduced; the detection module is connected with the first test terminal and the second test terminal respectively, and is used for measuring target parameters between the first test terminal and the second test terminal; the TFT device is turned off more tightly through the negative pressure module, electric leakage of the TFT device is reduced, then the target parameter between the first test terminal and the second test terminal is measured through the detection module, the influence of the electric leakage of the TFT device on the target parameter is reduced, and misjudgment of the target parameter is avoided.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The substrate detection method and the substrate detection fixture provided in the embodiments of the present application are described in detail above, and specific examples are applied in the present application to explain the principles and embodiments of the present application, and the description of the embodiments above is only used to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A method of inspecting a substrate, comprising:
providing a substrate to be detected, wherein the substrate to be detected at least comprises a TFT device, a first test terminal and a second test terminal, and the TFT device is respectively connected with the first test terminal and the second test terminal;
providing a substrate detection jig, wherein the substrate detection jig at least comprises a negative pressure module and a detection module;
the negative pressure module is connected with the TFT device, so that the TFT device is more tightly turned off by the negative pressure module, and the electric leakage of the TFT device is reduced;
the detection module is connected with the first test terminal and the second test terminal respectively, and the detection module is used for measuring target parameters between the first test terminal and the second test terminal.
2. The method of claim 1, wherein the substrate detection method is a substrate impedance detection method and the target parameter is a target impedance.
3. The substrate inspection method of claim 2, wherein the substrate impedance inspection method further comprises: connecting the first test terminal to VDDSignal to connect the second test terminal to VrefA signal.
4. The substrate inspection method of claim 3, wherein the TFT devices include at least a first TFT device and a second TFT device, the first TFT device being directly connected to the first test terminal, the second TFT device being directly connected to the second test terminal, the second TFT device having a power greater than the first TFT device.
5. The substrate inspection method of claim 4, wherein the first TFT device, the second TFT device, the first test terminal, and the second test terminal are connected in series.
6. The substrate inspection method of claim 5, wherein the substrate impedance inspection method further comprises: the negative pressure module is respectively connected with the first TFT device and the second TFT device, so that the first TFT device and the second TFT device are turned off more tightly, and the electric leakage of the first TFT device and the second TFT device is reduced.
7. The substrate inspection method of claim 5, wherein the substrate impedance inspection method further comprises: the negative voltage module is connected with the first TFT device or the second TFT device, so that the first TFT device or the second TFT device is turned off more tightly, and the electric leakage of the first TFT device or the second TFT device is reduced.
8. The substrate inspection method of claim 2, wherein the substrate impedance inspection method further comprises: measuring the target impedance by the detection component when the target impedance is greater than 106In Europe, the substrate to be detected has no short circuit; when the impedance is less than 106And in Europe, the substrate to be detected has short circuit abnormity.
9. A substrate detection jig is characterized by comprising a detection module and a negative pressure module, wherein the detection module is used for measuring target parameters, and the negative pressure module is used for enabling a TFT (thin film transistor) device of a substrate to be detected to be turned off more tightly and reducing detection misjudgment caused by electric leakage of the TFT device; the substrate detection tool is used for realizing the substrate detection method as set forth in any one of claims 1 to 8.
10. The substrate detection tool of claim 9, wherein the substrate detection tool is a substrate impedance detection tool and the target parameter is impedance.
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Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101750813A (en) * 2008-12-12 2010-06-23 北京京东方光电科技有限公司 Liquid crystal display and control method thereof
CN105070722A (en) * 2015-07-14 2015-11-18 深圳市华星光电技术有限公司 TFT substrate structure and manufacturing method thereof
WO2021232524A1 (en) * 2020-05-18 2021-11-25 武汉华星光电半导体显示技术有限公司 Low-leakage electrostatic discharge circuit, display panel, and display device
CN114689940A (en) * 2022-03-18 2022-07-01 深圳市华星光电半导体显示技术有限公司 Substrate impedance testing method, device, system, computer equipment and storage medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750813A (en) * 2008-12-12 2010-06-23 北京京东方光电科技有限公司 Liquid crystal display and control method thereof
CN105070722A (en) * 2015-07-14 2015-11-18 深圳市华星光电技术有限公司 TFT substrate structure and manufacturing method thereof
WO2021232524A1 (en) * 2020-05-18 2021-11-25 武汉华星光电半导体显示技术有限公司 Low-leakage electrostatic discharge circuit, display panel, and display device
CN114689940A (en) * 2022-03-18 2022-07-01 深圳市华星光电半导体显示技术有限公司 Substrate impedance testing method, device, system, computer equipment and storage medium

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