CN114606465B

CN114606465B - Method for preparing cutting line and cutting line

Info

Publication number: CN114606465B
Application number: CN202210102939.3A
Authority: CN
Inventors: 徐龙; 陈冲; 蔡辉硕; 陈晓
Original assignee: Shenzhen Fulian Intelligent Manufacturing Industry Innovation Center Co ltd
Current assignee: Shenzhen Fulian Intelligent Manufacturing Industry Innovation Center Co ltd
Priority date: 2022-01-27
Filing date: 2022-01-27
Publication date: 2024-05-17
Anticipated expiration: 2042-01-27
Also published as: CN114606465A

Abstract

The application provides a preparation method of a cutting line and the cutting line, wherein the preparation method of the cutting line comprises the following steps: providing a carbon fiber matrix; depositing a silicon-titanium substrate layer on the carbon fiber matrix by adopting physical vapor deposition, wherein the mass fraction of silicon in the silicon-titanium substrate layer is 5% -50%; and depositing a diamond layer on the silicon-titanium substrate layer by adopting chemical vapor deposition to obtain the cutting line, wherein the diamond layer contains 200-2000 diamond particles per square millimeter. In the application, the content of silicon atoms is controlled by physical vapor deposition, so that the content of diamond particles deposited on the silicon-titanium substrate layer by chemical vapor deposition is controlled. The cutting line has excellent cutting efficiency when 200 to 2000 diamond particles per square millimeter are contained in the diamond layer.

Description

Method for preparing cutting line and cutting line

Technical Field

The application relates to cutting of superhard materials, in particular to a preparation method of a cutting line and the cutting line.

Background

In the 90 s of the 20 th century, in order to solve the processing problem of large-size silicon wafers, a wire saw processing technology was adopted to cut the silicon rod into slices. Early wire saw techniques, which employ bare wire and free abrasive material, have been successfully used to machine silicon and silicon carbide by adding the abrasive material to the wire and work piece with a third party during the machining process to create a cutting action. On the basis of the above wire saw processing technique, in order to further shorten the processing time, and to correspondingly apply the wire saw processing technique to other hard substances and ceramics which are difficult to process, diamond abrasive is fixed to a metal wire in a certain manner, thereby producing a fixed diamond cutting wire.

Currently, most fixed diamond cutting wires employ electroplating to deposit a layer of metal (typically nickel and nickel-cobalt alloy) on the wire and consolidate the diamond abrasive within the metal. The smaller the diameter of the diamond cutting line is, the less loss of the workpiece to be cut is. However, the cutting line is gradually thinned after being used for multiple times, the thinning is performed through layer-by-layer drawing, and as the deformation of the cutting line is increased, the more crystal defects of the cutting line are, the worse the self-shaping is caused, the smaller the breaking force is, and the cutting line is easily broken in the cutting process, so that the cutting efficiency and the cutting quality are affected. In addition, the electroplating process also produces sewage, such as spent electroplating solution, which causes water pollution.

Disclosure of Invention

In view of the above, the present application provides a method for preparing a cutting line and a cutting line for solving the above problems.

The application provides a preparation method of a cutting line, which comprises the following steps: providing a carbon fiber matrix; depositing a silicon-titanium substrate layer on the carbon fiber matrix by adopting physical vapor deposition, wherein the mass fraction of silicon in the silicon-titanium substrate layer is 5% -50%; and depositing a diamond layer on the silicon-titanium substrate layer by adopting chemical vapor deposition to obtain the cutting line, wherein the diamond layer contains 200-2000 diamond particles per square millimeter.

In some embodiments, the method of preparing the cutting line further comprises, prior to depositing the diamond layer:

And placing the carbon fiber matrix with the silicon-titanium substrate layer deposited on the surface in vacuum, and performing heat treatment under the condition of inert gas, wherein the temperature of the heat treatment is 600-1200 ℃, and the time of the heat treatment is 1-3h.

In some embodiments, the method of preparing the dicing lines further comprises, prior to depositing the silicon-titanium substrate layer:

And placing the carbon fiber matrix in vacuum, and carrying out pretreatment under the condition of inert gas, wherein the pretreatment temperature is 600-1200 ℃, and the pretreatment time is 1-3h.

In some embodiments, the chemical vapor deposition takes methane and hydrogen as gas sources, the volume ratio of methane is 1-10%, the volume ratio of hydrogen is 90-99%, the temperature of the chemical vapor deposition is 600-1000 ℃, the pressure is 100-300torr, and the deposition time is 4-10h.

In some embodiments, the physical vapor deposition uses a silicon-titanium alloy as a target source, the deposition time is 5-10 hours, and the deposition temperature is 450-750 ℃.

The application also provides a cutting line, which comprises a carbon fiber substrate, a silicon-titanium substrate layer arranged on the carbon fiber substrate and a diamond layer arranged on the silicon-titanium substrate layer, wherein at least part of silicon atoms or titanium atoms in the silicon-titanium substrate layer are bonded to the carbon fiber substrate through chemical bonds, the silicon in the silicon-titanium substrate layer occupies 5% -50% of the mass fraction, and each square millimeter of the diamond layer contains 200-2000 diamond particles.

In some embodiments, the carbon fiber matrix comprises a plurality of individual carbon fibers, a plurality of the individual carbon fibers being woven into a bundle.

In some embodiments, when the carbon fiber matrix is the single carbon fiber, the cut line has a diameter of 10-20 μm.

In some embodiments, the silicon-titanium substrate layer has a thickness of 1-10 μm.

In some embodiments, the diamond in the diamond layer has a particle size of 5 μm to 30 μm.

In some embodiments, the diameter of the cutting line made of a single carbon fiber substrate is 10-20 μm.

In the application, the carbon fiber has the characteristics of excellent tensile strength, torsional strength, fatigue strength, elastic modulus, flexibility and the like, and the carbon fiber is selected as a matrix, so that the plastic deformation capacity of the cutting line can be improved, and the service life of the cutting line can be prolonged. The physical vapor deposition is adopted to form a silicon-titanium substrate layer on the carbon fiber substrate so as to improve the binding force between the substrate and the silicon-titanium substrate layer, and the chemical vapor deposition is further adopted to deposit on the silicon-titanium substrate layer so as to form diamond particles, wherein the diamond particles are connected to silicon atoms in the silicon-titanium substrate layer through chemical bond bonds so as to improve the binding force between the silicon-titanium substrate layer and diamond, and improve the cutting efficiency and the cutting quality of the cutting line. Meanwhile, the application adopts physical vapor deposition to control the content of silicon atoms, and ensures that the silicon atoms deposited on the carbon fiber matrix are uniformly distributed, thereby controlling the content and distribution of diamond particles. And the silicon atom content is controlled so that the cutting line has excellent cutting efficiency when 200 to 2000 diamond particles are contained per square millimeter in the diamond layer. Meanwhile, the preparation method provided by the application is environment-friendly and has little environmental pollution.

Drawings

FIG. 1 is a schematic diagram of a carbon fiber substrate with a silicon-titanium substrate layer deposited thereon according to an embodiment.

Fig. 2 is a schematic view of a silicon-titanium substrate layer with a diamond layer deposited thereon according to the first embodiment of fig. 1.

FIG. 3 is a scanning electron microscope image of the cutting line prepared in example two.

Description of the main reference signs

Carbon fiber matrix 10

Silicon-titanium substrate layer 20

Intermediate layer 21

Titanium atom 221

Silicon atoms 222

Diamond layer 30

Diamond particles 31

Detailed Description

Embodiments of the present invention are described in detail below. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.

In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Carbon fiber is a special fiber composed of carbon elements. The carbon fiber has the characteristics of high temperature resistance, friction resistance, electric conduction, heat conduction, corrosion resistance and the like. The graphite crystallite structure has high strength and modulus along the fiber axis direction because of the preferential orientation along the fiber axis. The carbon fiber is mainly used as a reinforcing material for compounding with resin, metal, ceramic, carbon and the like to manufacture an advanced composite material. If the carbon fiber is used as a matrix, the line diameter of the cutting line can be obviously reduced, and the carbon fiber has high strength and modulus, so that the line breakage rate in the cutting process can be greatly reduced. Wherein, modulus refers to the ratio of stress to strain of a material under stress. The carbon fiber has the characteristics of excellent tensile strength, torsional strength, fatigue strength, elastic modulus, flexibility and the like, and the plastic deformation capability of the cutting line can be improved by using the carbon fiber as a matrix.

The application provides a preparation method of a cutting line, which comprises the following steps:

S1, providing a carbon fiber matrix 10.

In some embodiments, the carbon fiber substrate 10 includes a plurality of individual carbon fibers woven to form a bundle of carbon fiber substrates 10. The carbon fiber substrate 10 may specifically include 1, 25 or 30 carbon fibers, wherein the diameter of a single carbon fiber is 5-7 μm.

S2, pretreating the carbon fiber substrate 10.

Specifically, the carbon fiber substrate 10 in the step S1 is placed in vacuum, and is subjected to heat treatment under the condition of inert gas, wherein the temperature of the heat treatment is 600-1200 ℃, and the time of the heat treatment is 1-3 hours. In this high temperature and time range, the internal defects (such as local overstress) of each carbon fiber in the carbon fiber matrix 10 are sufficiently eliminated, thereby enhancing the tensile modulus of each carbon fiber and prolonging the service life of the cutting line.

S3, depositing a silicon-titanium substrate layer 20 on the carbon fiber matrix 10 by adopting a physical vapor deposition method.

When the physical vapor deposition method is adopted, silicon-titanium alloy is used as a target source, the temperature is 450-750 ℃, and the deposition is carried out for 5-10 hours under the condition of inert gas, so that silicon atoms 222 and titanium atoms 221 are deposited on the surface of the carbon fiber matrix 10. The silicon content of the silicon-titanium substrate layer 20 may be adjusted according to the number of diamond particles 31 required in the dicing line. Wherein the mass fraction of silicon in the silicon-titanium substrate layer 20 is 5% -50%.

In some embodiments, the thickness of the silicon-titanium substrate layer 20 is 1-10 μm, in which the bonding force between the diamond layer 30 deposited on the subsequent silicon-titanium substrate layer 20 and the carbon fiber base 10 is improved and the plastic deformability of the cutting line is ensured. If the thickness of the silicon-titanium substrate layer 20 is greater than 10 μm, the overall cutting line exhibits the property of the silicon-titanium alloy in the silicon-titanium substrate layer 20 as the thickness of the silicon-titanium alloy in the silicon-titanium substrate layer 20 increases, increasing the brittleness of the cutting line, and reducing the service life of the cutting line. If the thickness of the silicon-titanium substrate layer 20 is less than 1 μm, not only the effect of improving the bonding force of the carbon fiber substrate 10 and the diamond layer 30 is not obvious, but also the subsequent cutting line can cause the carbon fiber substrate 10 to be etched by hydrogen in the process of depositing and growing diamond due to the lack of protection of the silicon-titanium substrate layer 20 by the carbon fiber substrate 10.

S4, performing heat treatment on the carbon fiber substrate 10 with the silicon-titanium substrate layer 20 deposited on the surface in the step S3.

Referring to fig. 1, a silicon-titanium substrate layer 20 is deposited on a carbon fiber substrate 10, and at this time, the silicon-titanium substrate layer 20 is deposited on the carbon fiber substrate 10 in the form of a silicon-titanium alloy in which silicon atoms 222 and titanium atoms 221 are distributed on the carbon fiber substrate 10.

The carbon fiber substrate 10 deposited with the silicon-titanium substrate layer 20 is put into an oven at 600-1200 ℃ and is subjected to heat treatment under vacuum and inert gas for 1-3 hours. Under the high temperature condition, the carbon fiber matrix 10 reacts with part of silicon atoms 222 and titanium atoms 221 in the silicon-titanium substrate layer 20 to generate an intermediate layer 21 containing silicon carbide and titanium carbide, so that the carbon fiber matrix 10 and the silicon-titanium substrate layer 20 are combined in a chemical bond mode, the bonding force between the two is improved, and the service life of the cutting line is prolonged.

S5, depositing a diamond layer 30 on the silicon-titanium substrate layer 20 by adopting chemical vapor deposition to obtain cutting lines, wherein 200-2000 diamond particles 31 are contained in each square millimeter of the diamond layer 30.

In some embodiments, the diamond layer 30 is deposited on the silicon-titanium substrate layer 20 using chemical vapor deposition using methane and hydrogen as a source, wherein the volume ratio of methane is 1% -10%, the volume ratio of hydrogen is 90% -99%, the temperature is 600 ℃ -1200 ℃, the pressure is 100-300torr, and the deposition time is 4-10 hours. Under the above parameters, the gas source excites a plasma in the reaction chamber and deposits diamond particles 31 on the silicon-titanium substrate layer 20, as shown in fig. 2. Wherein the diamond particles 31 are mainly deposited and grown on silicon atoms 222 of the silicon-titanium alloy in the silicon-titanium substrate layer 20. Under the above conditions of temperature and pressure, methane and hydrogen form a hydrogen-rich environment and generate active carbon-containing groups, carbon atoms in the active carbon-containing groups firstly diffuse inwards on the surface of the silicon-titanium substrate layer 20, until the nucleation rate of the carbon atoms on the surface of the silicon-titanium substrate layer 20 is larger than the inward diffusion rate, the carbon atoms can stay and nucleate on the silicon-titanium substrate layer 20, and then diamond starts growing on the surface of the silicon-titanium substrate layer 20 and grows to form diamond particles in a deposition time of 4-10 hours. And because the atomic arrangement structure of silicon is similar to that of diamond, carbon atoms can quickly nucleate and grow on the surface of silicon. The diamond is preferentially nucleated on the silicon surface of the silicon-titanium alloy. Thus, the volume ratio, temperature, pressure, and deposition time of the gas source described above are important conditions for growing the diamond particles 31.

In some embodiments, 200-2000 diamond particles 31 per square millimeter are contained in the diamond layer 30. When the content of the diamond particles 31 per square millimeter in the diamond layer 30 is within the above range, the cutting efficiency of the resultant cutting line is high and the production requirements can be satisfied. If the number of diamond particles 31 per square millimeter in the diamond layer 30 is small, the time required for cutting the product is longer, and the cutting efficiency of the cutting line is lowered. If the number of diamond particles 31 per square millimeter in the diamond layer 30 is too large, the mass fraction of silicon in the physical vapor deposition needs to be increased, the deposition time of the physical vapor deposition and the chemical vapor deposition needs to be increased at the same time, the production cost is increased, and meanwhile, the diamond layer 30 is formed into a film due to the excessive number of diamond particles 31 per unit area on the surface of the cutting line, so that planarization tends to be achieved, the cutting line loses cutting capability, and the cutting efficiency of the cutting line is reduced.

In the application, diamond particles 31 are uniformly distributed on the silicon-titanium substrate layer 20 by physical vapor deposition and chemical vapor deposition, and the carbon fiber matrix 10 deposited with the silicon-titanium substrate layer 20 is subjected to heat treatment, so that the silicon-titanium substrate layer 20 and the carbon fiber matrix 10 are further combined in a chemical bond connection mode, and the plasticity of the cutting line is improved. Compared with the existing electroplating mode, the method provided by the application is more environment-friendly.

Referring to fig. 2, the present application further provides a cutting line, where the cutting line includes a carbon fiber substrate 10, a silicon-titanium substrate layer 20 disposed on the carbon fiber substrate 10, and a diamond layer 30 disposed on the silicon-titanium substrate layer 20, at least a portion of silicon atoms 222 or titanium atoms 221 in the silicon-titanium substrate layer 20 are bonded to the carbon fiber substrate 10 through chemical bonds, the silicon in the silicon-titanium substrate layer 20 occupies 5% -50% by mass, and 200-2000 diamond particles 31 are contained in the diamond layer 30 per square millimeter.

In the above cutting lines, the silicon atoms 222 or the titanium atoms 221 in the silicon-titanium substrate layer 20 are bonded to the carbon fiber substrate 10 through chemical bonds, so that the bonding force between the silicon-titanium substrate layer 20 and the carbon fiber substrate 10 is improved. Because the silicon-titanium substrate layer 20 exists, the cutting line can not damage the carbon fiber matrix 10 in the cutting process, and the breakage rate of the cutting line is reduced; while the diamond particles 31 are deposited and grown on the silicon-titanium substrate layer 20, the cutting efficiency of the cutting line is improved. Wherein, when the silicon content of the silicon-titanium substrate layer 20 is in the range of 5% -50% by mass, 200-2000 particles per square millimeter in the diamond layer 30 can be ensured, and the cutting efficiency and the cutting quality of the workpiece cut by the cutting line can be ensured.

In some embodiments, the carbon fiber matrix 10 comprises a plurality of individual carbon fibers, a plurality of the individual carbon fibers being woven into a bundle. In actual production, the quantity of the carbon fibers can be correspondingly adjusted according to production requirements.

In some embodiments, when the carbon fiber matrix 10 is the single carbon fiber, the cut line has a diameter of 10-20 μm. The cutting line made of the single carbon fiber substrate 10 also has good cutting efficiency. Compared with the existing cutting line with the minimum diameter of 40 mu m, the cutting line provided by the application can save the material of a workpiece.

In some embodiments, the diamond particles 31 in the diamond layer 30 have a particle size of 5-30 μm. The diamond particles 31 have a particle diameter within the above range, and the cutting efficiency and cutting quality of the cutting wire are ensured. When the particle diameter of the diamond particles 31 is less than 5 μm, the cutting efficiency of the produced cutting line is low; when the particle diameter of the diamond particles 31 is larger than 30 μm, on the one hand, the time for depositing and preparing the diamond particles 31 with the particle diameter larger than 30 μm is longer, and the cost of preparing the raw materials of the diamond particles 31 is increased; on the other hand, when the cutting line made of the diamond particles 31 having a particle diameter of more than 30 μm is processed, the loss of the workpiece to be processed is increased, so that more waste is generated from the workpiece to be processed, and the production cost of the workpiece to be processed is increased.

In some embodiments, the cutting line is further subjected to post-treatment, mainly by processing the surface of the cutting line through a laser cutting device, cutting the massive diamond in the diamond layer 30 into uniform particles, and simultaneously performing laser cutting on the area with the surface growing into the diamond film to generate concave-convex relief, so that the cutting efficiency of the cutting line is improved, and the problem that the deposition of the diamond particles 31 on the surface of the cutting line is inconsistent to influence the processing quality of a workpiece is avoided.

The scheme of the present invention will be explained below with reference to examples. It will be appreciated by those skilled in the art that the following examples are for illustrative purposes only and are not to be construed as limiting the invention. Unless otherwise indicated, the reagents, software and instrumentation involved in the examples below are all conventional commercial products or open source.

Example 1

Taking a plurality of single carbon fibers with the diameter of 5-7 mu m, putting the single carbon fibers into a baking oven, heating the single carbon fibers at 1000 ℃ under vacuum and argon, and keeping the constant temperature for 2 hours; after cooling, 25 carbon fibers are selected and woven into bundles to form a carbon fiber matrix.

And (3) selecting silicon-titanium alloy as a target source, wherein the mass fraction of silicon is 10%, depositing a silicon-titanium substrate layer with the thickness of 3 mu m on the carbon fiber matrix by a physical vapor deposition method at the deposition temperature of 600 ℃ under normal pressure for 6 hours.

And placing the carbon fiber substrate deposited with the silicon-titanium substrate layer in a vacuum oven at 1000 ℃, and keeping the temperature for 2 hours under the protection of argon gas, so that the silicon-titanium substrate layer and the carbon fiber substrate fully react to generate silicon carbide and titanium carbide, and the binding force of the silicon-titanium substrate layer and the carbon fiber substrate is improved.

And (3) taking methane and hydrogen as air sources, wherein the volume ratio of methane is 3% and the volume ratio of hydrogen is 97%, placing the heat-treated silicon-titanium substrate layer and the carbon fiber matrix at the temperature of 700 ℃ and the pressure of 200torr, and depositing on the silicon-titanium substrate layer for 6 hours through chemical vapor deposition so as to deposit a diamond layer on the silicon-titanium substrate layer. Wherein about 700 diamond particles per square millimeter in the diamond layer.

And further processing the cutting line, cutting large-particle diamond on the diamond layer into small particles by using a laser cutting machine, and processing the diamond region with the surface growing into a film shape into an uneven shape to finally obtain the cutting line.

Example 2

Example 2 differs from example 1 in that: the mass fraction of silicon was 20%. In the resulting cut line, about 1000 diamond particles per square millimeter of diamond layer were obtained. The remaining steps were the same as in example 1.

Example 3

Example 3 differs from example 1 in that: the mass fraction of silicon was 30%. In the resulting cut line, approximately 1400 diamond particles per square millimeter of diamond layer were obtained.

Example 4

Example 4 differs from example 1 in that: the carbon fibers in the carbon fiber matrix are not subjected to high-temperature pretreatment.

Example 5

Example 5 differs from example 1 in that: the carbon fiber matrix with the silicon-titanium substrate layer deposited thereon was not heat treated.

Comparative example 1

Comparative example 1 differs from example 1 in that: the mass fraction of silicon was 3%. In the resulting cut line, about 150 diamond particles per square millimeter of diamond layer were obtained.

Comparative example 2

Comparative example 2 is different from example 1 in that: the mass fraction of silicon was 55%. In the resulting cut line, the diamond particles were about 2200 per square millimeter of diamond layer.

Referring to fig. 3, the present application performs scanning electron microscope test on the cutting line prepared in the second embodiment, and it can be seen that diamond particles are uniformly distributed.

The application also carries out cutting experiments on the cutting lines obtained in the examples 1-5 and the comparative examples 1-2, and uses linear cutting equipment, the workpieces are all silicon rods with the length of 10cm and the diameter of 15cm in the same batch, the experiments are carried out under the same linear speed, the same feeding speed and the same linear tension, and the cutting data of the cutting lines obtained in the examples 1-5 and the comparative examples 1-2 are respectively tested, and the data are as follows: the time required for cutting the silicon rod into 10 pieces, the service life of the cutting line, the tensile fracture stress and the plating layer falling rate after the wire cutting.

Number of diamond particles in diamond layer: in the scanning electron microscope, the number of diamond particles in a certain area is calculated.

Tensile stress at break test: and (5) measuring the maximum load which can be borne by the cutting line by adopting an electronic tension tester so as to obtain the tensile breaking stress data.

Cutting line life: when the falling rate of the cutting line reaches 40%, the working time of the cutting line is judged to be the service life.

Plating layer falling rate after wire cutting: and in a certain working time, calculating the weight reduction rate of the mass before and after the cutting line works.

TABLE 1 cutting Properties of the cutting lines obtained in examples 1-5 and comparative examples 1-2

Referring to table 1, it can be seen that the cutting lines prepared in examples 1 to 5 all had better cutting efficiency when the diamond particles per square millimeter were in the range of 700, 1000 or 1400, and the cutting lines prepared in examples 1 to 5 all had higher cutting efficiency than comparative examples 1 to 2, which means that the diamond particles per square millimeter on the cutting lines had better cutting efficiency in the range of 200 to 2000.

Compared with example 1, when the mass fraction of silicon is changed during physical vapor deposition, if the mass fraction of silicon in comparative example 1 is 3%, and the number of diamond particles per square millimeter in the cutting line is small, the time required for the cutting line to cut the silicon rod into 10 pieces is longer, so that the cutting efficiency of the cutting line is reduced, and meanwhile, due to the small number of diamond particles, the acting force of each diamond is larger during cutting, the falling of the diamond particles is accelerated, and the service life of the cutting line is possibly reduced. In comparative example 2, increasing the mass fraction of silicon increases the number of diamond particles per square millimeter, and since the number of diamond particles per unit area of the surface of the dicing line is excessive, diamond film formation tends to be flattened, so that the dicing line loses the dicing ability, the time required for the dicing line to dice the silicon rod into 10 pieces is increased, and the dicing efficiency of the dicing line is lowered.

The cutting lines obtained in examples 1-3 were longer in life and shorter in time required for cutting the silicon rod into 10 pieces and higher in cutting efficiency. In the physical vapor deposition step, the number of diamond particles per square millimeter in examples 1-3 was gradually increased as the mass fraction of silicon was increased, thus indicating that the number of diamond particles in the chemical vapor deposition diamond layer could be adjusted by changing the mass fraction of silicon in the target source under the same physical vapor deposition conditions.

As can be seen from table 1, comparing example 1 with example 4, if the carbon fiber matrix is subjected to high temperature pretreatment to prepare the cutting line, the tensile breaking stress of the cutting line can be improved, which further indicates that the high temperature pretreatment of the carbon fiber matrix can effectively eliminate the internal defect of each carbon fiber in the carbon fiber matrix to improve the tensile modulus of the carbon fiber matrix, thereby improving the service life of the cutting line.

Comparing example 1 with example 5, if the cutting line is not heat treated during the process of preparing the cutting line, the bonding force between the carbon fiber matrix and the silicon-titanium substrate layer is smaller during the cutting process of the cutting line, and the silicon-titanium substrate layer on the surface of the cutting line is easier to separate during the cutting of the silicon rod, so that the falling of part of diamond particles on the cutting line is possibly caused, and the service life of the cutting line is reduced. As shown in table 1, the falling off rate of the cut line reached 3.45% which is far greater than that of the heat-treated cut line. This also means that the pre-treatment and the heat treatment can effectively increase the service life of the cutting line.

The above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention.

Claims

1. A method of making a cut line, the method comprising:

Providing a carbon fiber matrix;

Depositing a silicon-titanium substrate layer on the carbon fiber matrix by adopting physical vapor deposition, wherein the mass fraction of silicon in the silicon-titanium substrate layer is 5% -50%, the physical vapor deposition takes silicon-titanium alloy as a target source, the deposition time is 5-10h, and the deposition temperature is 450-750 ℃;

And depositing a diamond layer on the silicon-titanium substrate layer by adopting chemical vapor deposition to obtain a cutting line, wherein the chemical vapor deposition takes methane and hydrogen as air sources, the volume ratio of methane is 1-10%, the volume ratio of hydrogen is 90-99%, the temperature of the chemical vapor deposition is 600-1000 ℃, the pressure is 100-300torr, the deposition time is 4-10h, and each square millimeter of the diamond layer contains 200-2000 diamond particles.

2. The method of making a cutting wire according to claim 1, wherein prior to depositing the diamond layer, the method of making a cutting wire further comprises:

3. The method of making a cut line according to claim 1, wherein prior to depositing the silicon-titanium substrate layer, the method of making a cut line further comprises:

4. A cutting line produced by the production method of a cutting line according to any one of claims 1 to 3, characterized in that the cutting line comprises a carbon fiber base body, a silicon-titanium substrate layer provided on the carbon fiber base body, and a diamond layer provided on the silicon-titanium substrate layer, at least part of silicon atoms or titanium atoms in the silicon-titanium substrate layer being bonded to the carbon fiber base body by chemical bonds.

5. The cutting wire of claim 4, wherein said carbon fiber matrix comprises a plurality of individual carbon fibers, a plurality of said individual carbon fibers being woven into a bundle.

6. The cutting line of claim 5, wherein when the carbon fiber matrix is the single carbon fiber, the cutting line has a diameter of 10 to 20 μm.

7. The dicing line of claim 4, wherein the silicon-titanium substrate layer has a thickness of 1-10 μm.

8. The cutting line of claim 4, wherein the diamond in the diamond layer has a grain size of 5 to 30 μm.