CN114605150B - 一种高密度、低损耗及高介电常数压电陶瓷及其制备方法 - Google Patents

一种高密度、低损耗及高介电常数压电陶瓷及其制备方法 Download PDF

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CN114605150B
CN114605150B CN202210279958.3A CN202210279958A CN114605150B CN 114605150 B CN114605150 B CN 114605150B CN 202210279958 A CN202210279958 A CN 202210279958A CN 114605150 B CN114605150 B CN 114605150B
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刘付佩
李茂洪
粟波
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Zhongshan Demao Shengnuo Materials Co.,Ltd.
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Abstract

本发明提供一种高密度、低损耗、高介电常数压电陶瓷,其化学通式为:PbxCaeSbyLa1‑x‑e‑y(ZrwTivNb1‑w‑v)O3+m%Cr2O3+n%PbO,通过掺杂La3+能降低晶格畸变程度,且能降低氧空位的钉扎效应,达到降低介电损耗的目的,通过加入Nb2O5可改变了陶瓷中氧空位的浓度和阳离子空位浓度,从而降低烧结温度,降低介电损耗,并使得压电陶瓷的耐受性和密度提高,具有高介电常数,高压电常数,低损耗和高温条件下的耐受性,适用于高档医疗设备和各种介电常数要求较高的设备,本发明提供的制备方法采用传统方法即传统氧化物混合方法进行合成,常压烧结,通过配方和工艺的调整和改进来自北具有较好综合性能的压电陶瓷材料,提高了其电学性能,得到了优异的压电性能。

Description

一种高密度、低损耗及高介电常数压电陶瓷及其制备方法
技术领域
本发明压电陶瓷技术领域,具体涉及一种高密度、低损耗及高介电常数的压电陶瓷及其制备方法。
背景技术
压电陶瓷材料是一种电能与机械能相互转换的材料,即给压电材料施加一个机械应力,将会在其表面产生电荷,反之,将外加电场施加在压电材料上,压电材料也会产生机械形变。压电陶瓷具有体积小、分辨率高、响应快、推力大等一系列特点,在传感器、执行器、换能器、无损检测和通讯技术等领域已获得了广泛的应用。
然而目前市场上对高档医用超声诊断仪的不断要求。同时,一般介电常数都比较低4800以下、介电损耗都比较大,约在3%以上,且密度较低,限制了薄片作为高频的应用;压电常数低,限制了高精灵敏度的要求,从而限制了其整体的发展。
因此,亟需一种高密度、低损耗、高介电常数的压电陶瓷及其制备方法。
发明内容
本发明为解决现有技术问题,提供一种高密度、低损耗及高介电常数的压电陶瓷,具有低介电损耗,高介电常数,高密度,高压电常数的优点,适用于各种高端医疗设备,有增长使用寿命,提高灵敏度的优点。
本发明的第二个目的是提供一种高密度、低损耗及高介电常数的压电陶瓷的制备方法。
为实现上述第一个目的,本发明采用的技术方案是:
一种高密度、低损耗及高介电常数压电陶瓷,所述压电陶瓷的化学通式为:PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3+m%Cr2O3+n%PbO;通过在上述体系中掺杂La3+能降低晶格畸变程度,使得伪四方相结构得到增强,并且La3+能明显抑制样品晶粒长大,晶粒的减小对样品电学性能的提高起着促进作用,且能降低氧空位的钉扎效应,达到降低介电损耗的目的,通过在上述体系中掺杂少量Ca2+,能够增强Zr4+与Ti4+之间的相互作用,从而达到提高压电陶瓷的密度。
如上所述的高密度、低损耗及高介电常数的压电陶瓷,所述化学通式中0.5<x<1,0<e<0.5,0<y<0.5,0<La<0.5。
如上所述的高密度、低损耗及高介电常数的压电陶瓷,所述化学通式中0<w<0.8,0<v<0.7;通过加入Nb2O5可改变了陶瓷中氧空位的浓度和阳离子空位浓度,在不降低压电常数的情况下提高材料的介电常数和调控缺陷浓度,而PbO存在很丰富的液相区,加入后在烧结过程中形成少量液相,从而降低烧结温度,降低介电损耗,并使得压电陶瓷的耐受性和密度提高,本申请相较于现有技术,具有高介电常数,高压电常数,低损耗和高温条件下的耐受性,适用于高档医疗设备和各种介电常数要求较高的设备。
如上所述的高密度、低损耗及高介电常数的压电陶瓷,所述化学通式中0<m<5,0<n<5。
如上所述的高密度、低损耗及高介电常数的压电陶瓷,所述压电陶瓷的包括以下组分Pb3O4,Sb2O3,La2O3,ZrO2,TiO2,Nb2O5,Cr2O3
如上所述的高密度、低损耗及高介电常数的压电陶瓷,所述压电陶瓷的介电常数>5000。
如上所述的高密度、低损耗及高介电常数的压电陶瓷,所述压电陶瓷的介电损耗≤1.2%。
如上所述的高密度、低损耗及高介电常数的压电陶瓷,所述压电陶瓷的密度≥7.85。
为实现上述第二个目的,本发明采用的技术方案是:
如上所述的高密度、低损耗及高介电常数的压电陶瓷的制备方法,其特征在于,包括以下步骤:
步骤1:将Pb3O4,Sb2O3,La2O3,ZrO2,TiO2,Nb2O5,Cr2O3作为原料,按PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3+m%Cr2O3+n%PbO的配比混合均匀,在850℃-900℃下保温3-4小时后得到混合粉料;
步骤2:将PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3+m%Cr2O3+n%PbO混合粉料细磨2-4h,再加入0.4-0.8wt%的聚乙烯醇(PVA)粘结剂造粒,再压制成型;
步骤3:最后将成型后坯体于1120-1280℃下烧结3-5h,冷却后印刷银浆,最后对烧好银后的试样进行极化,即得成品;
如上所述的高密度、低损耗及高介电常数的压电陶瓷的制备方法,所述步骤2中细磨后粉体的粒径为1-2μm。
本发明相对于现有技术,有以下优点:
本发明所提供的一种高密度、低损耗及高介电常数的压电陶瓷,其化学通式为:PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3+m%Cr2O3+n%PbO,通过掺杂La3+能降低晶格畸变程度,使得伪四方相结构得到增强,并且La3+能明显抑制样品晶粒长大,晶粒的减小对样品电学性能的提高起着促进作用,且能降低氧空位的钉扎效应,达到降低介电损耗的目的,通过加入Nb2O5可改变了陶瓷中氧空位的浓度和阳离子空位浓度,在不降低压电常数的情况下提高材料的介电常数和调控缺陷浓度,而PbO存在很丰富的液相区,加入后在烧结过程中形成少量液相,从而降低烧结温度,降低介电损耗,并使得压电陶瓷的耐受性和密度提高,本申请相较于现有技术,具有高密度、高介电常数,高压电常数,低损耗和高温条件下的耐受性,适用于高端医疗设备和各种介电常数要求较高的设备,
本发明提供的一种高密度、低损耗及高介电常数的压电陶瓷的制备方法,以PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3为基础,采用传统方法即传统氧化物混合方法进行合成,常压烧结,通过配方的调整和改进得到具有较好综合性能的压电陶瓷材料,提高了其电学性能,得到了优异的压电性能,提供了一种介电常数ε高、压电系数d33高、介电损耗tanδ小、密度高,且综合性能好的压电陶瓷,其中,ε>5000、d33>850、tanδ≤1.2%。
具体实施方式
下面结合实施例对本发明的技术方案进行说明。
本发明一种高密度、低损耗及高介电常数的压电陶瓷的制备方法:
步骤1:将Pb3O4,Sb2O3,La2O3,ZrO2,TiO2,Nb2O5,Cr2O3作为原料,按PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3+m%Cr2O3+n%PbO的配比混合均匀,在900℃下保温4h后得到混合粉料;
步骤2:将PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3+m%Cr2O3+n%PbO混合粉料细磨3h,细磨后粉体的粒径为0.6μm,再加入0.5wt%的聚乙烯醇(PVA)粘结剂造粒,再压制成型;
步骤3:最后将成型后坯体于1280℃下烧结4h,冷却后印刷银浆,最后对烧好银后的试样进行极化,即得成品;
具体实施例如下:
实施例1:
x=0.63,e=0.18,y=0.07,w=0.4,v=0.3,m=0.4,n=0.6。
实施例2:
x=0.52,e=0.21,y=0.03,w=0.5,v=0.1,m=0.3,n=0.7。
实施例3:
x=0.73,e=0.15,y=0.01,w=0.2,v=0.6,m=0.2,n=0.8。
实施例4:
x=0.83,e=0.03,y=0.09,w=0.2,v=0.6,m=0.2,n=0.8。
对上述实施例1-4的介电性能进行测试,成品尺寸均设定为直径为10mm,厚度为1mm,测试结果列于下表1。
表1:高密度、低损耗及高介电常数的压电陶瓷介电性能
从表中可得出,本发明所提供的一种高密度、低损耗及高介电常数的压电陶瓷,其化学通式为:PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3+m%Cr2O3+n%PbO,当x=0.83,e=0.03,y=0.09,w=0.2,v=0.6,m=0.2,n=0.8时,其介电损耗最小,压电常数最大,且密度最高,本发明所提供的一种高密度、低损耗及高介电常数的压电陶瓷,通过掺杂La3+能降低晶格畸变程度,使得伪四方相结构得到增强,并且La3+能明显抑制样品晶粒长大,晶粒的减小对样品电学性能的提高起着促进作用,且能降低氧空位的钉扎效应,达到降低介电损耗的目的,PbO存在很丰富的液相区,加入后在烧结过程中形成少量液相,从而降低烧结温度,降低介电损耗,并使得压电陶瓷的耐受性和密度提高,适用于高档医疗设备和各种介电常数要求较高的设备。
以上所述仅为本申请的较佳实施例而已,并不用以限制本申请,凡在本申请的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本申请的保护范围之内。

Claims (4)

1.一种高密度、低损耗及高介电常数的压电陶瓷,其特征在于:所述压电陶瓷的化学通式为:PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3 +m%Cr2O3+n%PbO;
所述化学通式中0.52<x<0.83,0<e<0.5,0.01<y<0.09,0<La<0.24;
所述化学通式中0.2<w<0.5,0.1<v<0.6;
所述压电陶瓷的原料,包括以下组分Pb3O4,Sb2O3,La2O3,ZrO2,TiO2,Nb2O5,Cr2O3
所述化学通式中0.2<m<0.4,0.6<n<0.8;
所述压电陶瓷的密度≥7.85 g/cm3
所述压电陶瓷的制备方法,包括以下步骤:
步骤1:将Pb3O4, Sb2O3, La2O3, ZrO2, TiO2, Nb2O5, Cr2O3作为原料,按PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3 +m%Cr2O3+n%PbO的配比混合均匀,在850℃-900℃下保温3-4小时后得到混合粉料;
步骤2:将PbxCaeSbyLa1-x-e-y(ZrwTivNb1-w-v)O3 +m%Cr2O3+n%PbO混合粉料细磨2-4h,再加入0.4-0.8wt%的聚乙烯醇(PVA)粘结剂造粒,再压制成型;
步骤3:最后将成型后坯体于1120-1280℃下烧结3-5h,冷却后印刷银浆,最后对烧好银后的试样进行极化,即得成品。
2.根据权利要求1所述的高密度、低损耗及高介电常数的压电陶瓷,其特征在于:所述压电陶瓷的介电常数>5500 F/m。
3.根据权利要求1所述的高密度、低损耗及高介电常数的压电陶瓷,其特征在于:所述压电陶瓷的介电损耗≤1.2%。
4.根据权利要求1所述的高密度、低损耗及高介电常数的压电陶瓷,其特征在于:所述步骤2中细磨后粉体的粒径为1-2μm。
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