CN114594357A - Drain-source voltage detection circuit and switching circuit of power tube - Google Patents
Drain-source voltage detection circuit and switching circuit of power tube Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The application discloses a drain-source voltage detection circuit and a switch circuit of a power tube. The drain-source voltage detection circuit comprises a voltage sampling module, a compensation module and an output module, wherein the voltage sampling module is used for collecting drain terminal voltage and source terminal voltage of the power tube so as to obtain sampling current, the compensation module is used for obtaining compensation current according to the sampling current, and the output module is used for obtaining detection current representing the drain-source voltage of the power tube according to the sampling current and the compensation current. The compensation module can compensate the offset caused by the grid source voltage of the transistor in the voltage detection module, so that the compensated detection current accurately represents the drain source voltage of the power tube, and the detection accuracy is improved.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a drain-source voltage detection circuit and a switch circuit of a power tube.
Background
In the power supply system, conversion of electric energy and stabilization of output voltage are realized by controlling on and off of a switching type power Transistor, for example, by an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
Since the power transistor needs to flow a large current and its operating environment is complex, so many protection circuits are needed to protect the power transistor, in many applications, it is usually necessary to detect the drain-source voltage of the power transistor and convert it into a current in a linear relationship with the drain-source voltage difference, so that the power transistor can be safely operated and/or used for other functions.
The prior art adopts the operational amplifier circuit to detect the drain-source voltage of power tube, and current operational amplifier circuit on the one hand because the influence of the self load current of operational amplifier can cause the measuring current to appear the maladjustment, reduces the precision that detects, and on the other hand receives the restriction of common mode working range, when the output voltage of power tube is lower, probably leads to the unable normal work of circuit, causes the detection distortion to influence the wholeness performance index of system.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a drain-source voltage detection circuit and a switching circuit for a power transistor, which can detect the drain-source voltage of the power transistor with high accuracy and improve the overall performance index of the system.
According to an aspect of the present invention, there is provided a drain-source voltage detection circuit for a power transistor, including: the voltage sampling module is used for collecting the drain end voltage and the source end voltage of the power tube so as to obtain sampling current; the compensation module is used for obtaining a compensation current according to the sampling current; and the output module is used for outputting detection current representing the drain-source voltage of the power tube according to the compensation current and the sampling current.
Optionally, the drain-source voltage detection circuit further includes: and the current mirror module is used for respectively providing a first mirror image current and a second mirror image current for the compensation module and the output module according to the sampling current.
Optionally, the voltage sampling module includes: the first end of the first detection resistor is connected with the drain end of the power tube; and a first end of the first transistor is connected with a second end of the first detection resistor, a control end of the first transistor is connected with a source end of the power tube, and the second end of the first transistor is used for outputting the sampling current.
Optionally, the compensation module includes: a second transistor having a first terminal connected to a power supply voltage and a second terminal receiving the first mirror current; a first end of the second detection resistor is connected with the power supply voltage, and a second end of the second detection resistor is connected with the control end of the second transistor; and a third transistor, a first end of which is connected with the second detection resistor and a common end of the second transistor, a control end of which is connected with a second end of the second transistor, and the second end is used for outputting the compensation current.
Optionally, the output module includes: a fourth transistor, a first terminal of which is connected to the power supply voltage and a control terminal of which is connected to the second terminal, for receiving the second mirror current; and a fifth transistor, a first end of which is connected to the power supply voltage, a control end of which is connected to the control end of the fourth transistor, and a second end of which is connected to the second end of the third transistor, wherein the fifth transistor superimposes the second mirror current and the compensation current to output the detection current.
Optionally, the current mirror module includes: a sixth transistor, wherein the first end of the sixth transistor is connected with the control end to receive the sampling current, and the second end of the sixth transistor is grounded; a control end of the seventh transistor is connected with a control end of the sixth transistor, a first end of the seventh transistor is used for outputting the first mirror current, and a second end of the seventh transistor is grounded; and a control end of the eighth transistor is connected with a control end of the sixth transistor, a first end of the eighth transistor is used for outputting the second mirror current, and a second end of the eighth transistor is grounded.
Optionally, the first detection resistor and the second detection resistor have the same resistance value, and the first transistor and the second transistor are selected from transistors with the same size.
Optionally, the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are respectively selected from P-type metal oxide semiconductor field effect transistors
Optionally, the sixth transistor, the seventh transistor, and the eighth transistor are respectively selected from N-type metal oxide semiconductor field effect transistors.
According to another aspect of the invention, a switching circuit is provided, which comprises the drain-source voltage detection circuit of the power tube.
The drain-source voltage detection circuit and the switch circuit of the power tube have the following beneficial effects.
The drain-source voltage detection circuit comprises a voltage sampling module, a compensation module and an output module, wherein the voltage sampling module is used for collecting drain terminal voltage and source terminal voltage of the power tube so as to obtain sampling current, the compensation module is used for obtaining compensation current according to the sampling current, and the output module is used for obtaining detection current representing the drain-source voltage of the power tube according to the sampling current and the compensation current. The compensation module of the embodiment of the invention can compensate the offset caused by the grid-source voltage of the transistor in the voltage detection module, so that the compensated detection current accurately represents the drain-source voltage of the power tube, and the detection accuracy is improved. Furthermore, compared with the existing detection circuit, the drain-source voltage detection circuit only adopts a single transistor for detection, thereby simplifying the structure of the detection circuit and reducing the circuit cost.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
fig. 1 is a schematic circuit diagram of a conventional drain-source voltage detection circuit of a power transistor;
fig. 2 shows a schematic circuit diagram of a drain-source voltage detection circuit of a power tube according to an embodiment of the invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.
It should be understood that in the following description, "circuitry" may comprise singly or in combination hardware circuitry, programmable circuitry, state machine circuitry, and/or elements capable of storing instructions executed by programmable circuitry. When an element or circuit is referred to as being "connected to" another element or element/circuit is referred to as being "connected between" two nodes, it may be directly coupled or connected to the other element or intervening elements may be present, and the connection between the elements may be physical, logical, or a combination thereof. In contrast, when an element is referred to as being "directly coupled" or "directly connected" to another element, it is intended that there are no intervening elements present.
The invention is further illustrated with reference to the following figures and examples.
Fig. 1 is a schematic circuit diagram of a conventional drain-source voltage detection circuit of a power transistor. As shown in fig. 1, a drain terminal and a source terminal of the power transistor P1 to be tested are respectively connected to the input voltage Vin and the output voltage Vout, and the drain-source voltage detection circuit 100 includes resistors R1 and R2, transistors MP1 to MP3, and transistors MN1 and MN 2. The resistor R1, the transistor MP1 and the transistor MN1 are sequentially connected between the drain end of the power tube P1 to be tested and the ground, and the resistor R2, the transistor MP2 and the transistor MN2 are sequentially connected between the source end of the power tube P1 to be tested and the ground. The size ratio of the transistor MP1 to the transistor MP2 is 1:1, the transistor MP1 and the transistor MP2 are connected in common gate, the transistor MN1 and the transistor MN2 are connected in common gate-common source, and the gate terminals of the two are connected to the bias voltage Vbias. The gate terminal of the transistor MP3 is connected to the node B between the transistor MP2 and the transistor MN2, and the source terminal is connected to the node a between the resistor R1 and the transistor MP 1.
When the drain-source voltage detection circuit 100 operates normally, the transistor MP1 and the transistor MP2 are respectively used for detecting the input voltage Vin and the output voltage Vout and converting the voltage difference between the input voltage Vin and the output voltage Vout into a current, so as to obtain a detection current Isen. Wherein, the current flowing through the transistor MP1 and the transistor MP2 are equal, and the current flowing through the transistor MP1 and the transistor MP2 is equal to the mirror current Ia provided by the transistor MN1 and the transistor MN2, that is:
IMP1＝IMP2ia formula 1
The negative feedback connection of the transistor MP3 makes the source terminal voltages of the transistor MP1 and the transistor MP2 equal, i.e., the source terminal voltage of the transistor MP2 is equal to:
V1-Vout-Ia × R2-VA equation 2
Where V1 represents the source terminal voltage of the transistor MP2, Ia represents the mirror current provided by the transistors MN1 and MN2, and VA represents the voltage at the node a.
Because the current flowing through the resistor R1 is:
IR1formula 3 (Vin-VA)/R1
Assuming that the resistances of the resistor R1 and the resistor R2 (i.e., R1 — R2 — R) are equal, combining equation 2 and equation 3, the current flowing through R1 can be:
IR1formula 4 (Vin-Vout + Ia × R2)/R1 ═ Vin-Vout)/R + Ia
And because the current through transistor MP3 is equal to:
IMP3＝IR1-IMP1equation 5
As can be obtained by combining equation 1 and equation 4, the current flowing through the transistor MP3, i.e., the detection current Isen, is:
isen ═ (Vin-Vout)/R equation 6
However, to make the drain-source power detection circuit 100 work normally, all transistors in the circuit need to work in a saturation region, when the voltage of the output voltage Vout is lower than the sum of the drain-source saturation voltages of the transistor MP2 and the transistor MN1, the transistor MN2 will work in a linear region, as the output voltage Vout continues to decrease, the drain voltage of the transistor MN2 decreases to 0, the transistor MP2 is turned off, and the detection current Isen is equal to:
isen ═ i (Vin-VGS)/R equation 7
Where VGS represents the gate-source voltage of transistor MP 3. As can be seen from the above, the drain-source voltage detection circuit 100 in the prior art is limited by the common mode working range, and when the output voltage Vout is low, the circuit may not work normally, and the accuracy of the drain-source voltage detection is reduced, thereby affecting the overall performance index of the system.
The embodiment of the invention provides the drain-source voltage detection circuit with a simple structure, and a single transistor is adopted for detection, so that the structure of the detection circuit is simplified, and the circuit cost is reduced. Meanwhile, the drain-source voltage detection circuit of the embodiment of the invention also comprises a compensation module, wherein the compensation module is used for compensating the offset caused by the grid-source voltage of the detection transistor, thereby being beneficial to improving the detection precision.
Fig. 2 shows a schematic circuit diagram of a drain-source voltage detection circuit of a power tube according to an embodiment of the invention. In fig. 2, the power transistor P1 is the main output transistor of the chip, and is connected between the input terminal and the output terminal. The power transistor P1 is selected from, for example, an N-type MOSFET, and has a drain terminal connected to the input terminal of the chip for receiving the input voltage Vin and a source terminal connected to the output terminal of the chip for providing the output voltage Vout to the post-stage circuit. The gate driving signal Vgate is used to control the on and off of the power transistor P1 to control the power transmission from the chip input terminal to the chip output terminal.
The drain-source voltage detection circuit 200 includes a voltage detection module 210, a current mirror module 220, a compensation module 230, and an output module 240.
The voltage detection module 210 Is connected to the drain terminal and the source terminal of the power tube P1, and Is configured to collect the drain terminal voltage and the source terminal voltage of the power tube, respectively, to obtain a sampling current Is 1. The current mirror module 220 Is used for generating a first mirror current Is2 and a second mirror current Is3 according to the sampling current Is 1. The compensation module 230 Is configured to obtain the compensation current Icom according to a first mirror current Is2 related to the sampling current Is 1. The output module 240 Is configured to add the compensation current Icom and a second mirror current Is3 related to the sampling current Is1 to obtain a sensing current Isen representing the drain-source voltage of the power tube P1.
Further, the voltage detecting module 210 includes a detecting resistor Rs1 and a transistor MP 1. The first end of the detection resistor Rs1 Is connected with the drain terminal of the power tube P1, the second end of the detection resistor Rs1 Is connected with the first end of the transistor MP1, the control end of the transistor MP1 Is connected with the source end of the power tube P1, and the second end of the detection resistor Rs1 Is used for outputting the sampling current Is 1.
The current mirror module 220 includes transistors MN1-MN 3. The first terminal of the transistor MN1 Is connected to the second terminal of the transistor MP1 for receiving the sampling current Is1, and the second terminal Is grounded. The control terminal of the transistor MN2 Is connected to the control terminal of the transistor MN1, the first terminal Is used for outputting the first mirror current Is2, and the second terminal Is grounded. The control terminal of the transistor MN3 Is connected to the control terminal of the transistor MN1, the first terminal Is used for outputting the second mirror current Is3, and the second terminal Is grounded. The transistors MN1-MN3 form a current mirror, so that the sampling current Is1 Is mirrored in equal proportion to obtain a first mirror current Is2 and a second mirror current Is 3.
The compensation module 230 includes a transistor MP2, a transistor MP3, and a sense resistor Rs 2. The first terminal of the transistor MP2 Is connected to the power supply voltage VDD, the second terminal Is connected to the first terminal of the transistor MN2 to receive the first mirror current Is2, the first terminal of the detection resistor Rs2 Is connected to the power supply voltage VDD, the second terminal Is connected to the control terminal of the transistor MP2, the first terminal of the transistor MP3 Is connected to the common terminal of the detection resistor Rs2 and the transistor MP2, the control terminal Is connected to the second terminal of the transistor MP2, and the second terminal Is used for outputting the compensation current Icom.
The output module 240 includes transistors MP4 and MP5, a first terminal of the transistor MP4 Is connected to the power voltage VDD, a control terminal and a second terminal are connected to the first terminal of the transistor MN3 to receive the second mirror current Is3, a first terminal of the transistor MP5 Is connected to the power voltage VDD, a control terminal Is connected to the control terminal of the transistor MP4, and a second terminal Is connected to the second terminal of the transistor MP 3. The transistors MP4 and MP5 form a current mirror, so that the second mirror current Is3 can be mirrored in equal proportion and superposed with the compensation current Icom to obtain the detection current Isen.
The operation principle of the drain-source voltage detection circuit according to the embodiment of the present invention will be described in detail with reference to fig. 2.
The transistor MP1 and the sense resistor Rs1 sample the power tube P1 and convert the sensed voltage into a sampled current Is 1:
is1 ═ i (Vin-Vout-VGS1)/Rs1 equation 8
Where VGS1 represents the gate-source voltage of the transistor MP1, and Rs1 represents the resistance of the sensing resistor Rs 1. Since the transistor MP2, the transistor MP3, and the sensing resistor Rs2 form a local negative feedback structure, the compensation current Icom is:
icom ═ VGS2/Rs2 equation 9
Where VGS2 represents the gate-source voltage of the transistor MP2, and Rs2 represents the resistance of the sensing resistor Rs 2. Because the transistors MN1-MN3 form a current mirror, and the sampling current Is1 Is mirrored in equal proportion to obtain a first mirror current Is2 and a second mirror current Is3, that Is:
is1 ═ Is2 ═ Is3 equation 10
And because the transistor MP5 superposes the second mirror current Is3 and the compensation current Icom to obtain the detection current Isen, that Is:
isen Icom + Is3 equation 11
The detection current Isen is obtained by combining the formula 8 and the formula 11:
isen ═ i (Vin-Vout-VGS1)/Rs1+ VGS2/Rs2 equation 12
Since the transistors MP1 and MP2 are of the same type and have the same size, and the currents flowing through the transistors are equal, VGS1 is VGS 2. Meanwhile, the resistances of the detection resistors Rs1 and Rs2 are equal, so that the following results are obtained:
isen ═ (Vin-Vout)/Rs1 equation 13
As can be seen from formula 13, the compensation module 230 of this embodiment can compensate for the offset caused by the gate-source voltage of the transistor MP1, so that the compensated detection current accurately represents the voltage difference between the drain-terminal voltage and the source-terminal voltage of the power transistor P1, which is beneficial to improving the detection accuracy.
In the above embodiments, the transistors MP1 to MP5 are, for example, P-type MOSFETs (P-Metal-Oxide-Semiconductor Field-Effect transistors), and the first terminal, the second terminal and the control terminal of the P-type MOSFET are a source, a drain and a gate, respectively.
The transistors MN1 to MN3 are, for example, (N-Metal-Oxide-Semiconductor Field-Effect Transistor), and the first terminal, the second terminal, and the control terminal of the N-type MOSFET are a drain, a source, and a gate, respectively.
In summary, in the drain-source voltage detection circuit and the switch circuit of the power tube according to the embodiments of the present invention, the drain-source voltage detection circuit includes a voltage sampling module, a compensation module, and an output module, the voltage sampling module is configured to collect a drain terminal voltage and a source terminal voltage of the power tube to obtain a sampling current, the compensation module is configured to obtain a compensation current according to the sampling current, and the output module obtains a detection current representing the drain-source voltage of the power tube according to the sampling current and the compensation current. The compensation module of the embodiment of the invention can compensate the offset caused by the grid-source voltage of the transistor in the voltage detection module, so that the compensated detection current accurately represents the drain-source voltage of the power tube, and the detection accuracy is improved. Furthermore, compared with the existing detection circuit, the drain-source voltage detection circuit only adopts a single transistor for detection, thereby simplifying the structure of the detection circuit and reducing the circuit cost.
It should be noted that although the device is described herein as being an N-channel or P-channel device, or an N-type or P-type doped region, one of ordinary skill in the art will appreciate that complementary devices may be implemented in accordance with the present invention. It will be understood by those skilled in the art that conductivity type refers to the mechanism by which conduction occurs, for example by conduction through holes or electrons, and thus does not relate to the doping concentration but to the doping type, for example P-type or N-type. It will be understood by those of ordinary skill in the art that the words "during", "when" and "when … …" as used herein in relation to the operation of a circuit are not strict terms referring to actions occurring immediately upon initiation of a startup action, but rather there may be some small but reasonable delay or delays, such as various transmission delays, between them and the reactive action (action) initiated by the startup action. The words "about" or "substantially" are used herein to mean that the value of an element (element) has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there is always a slight deviation that makes it difficult for the value or position to be exactly the stated value. It has been well established in the art that a deviation of at least ten percent (10%) for a semiconductor doping concentration of at least twenty percent (20%) is a reasonable deviation from the exact ideal target described. When used in conjunction with a signal state, the actual voltage value or logical state (e.g., ") or" "of the signal depends on whether positive or negative logic is used.
Moreover, it is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
In accordance with the present invention, as set forth above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The protection scope of the present invention should be subject to the scope defined by the claims of the present invention.
Claims (10)
1. A drain-source voltage detection circuit of a power tube comprises:
the voltage sampling module is used for collecting the drain end voltage and the source end voltage of the power tube so as to obtain sampling current;
the compensation module is used for obtaining a compensation current according to the sampling current; and
and the output module is used for outputting detection current representing the drain-source voltage of the power tube according to the compensation current and the sampling current.
2. The drain-source voltage detection circuit of claim 1, further comprising:
and the current mirror module is used for respectively providing a first mirror image current and a second mirror image current for the compensation module and the output module according to the sampling current.
3. The drain-source voltage detection circuit of claim 2, wherein the voltage sampling module comprises:
the first end of the first detection resistor is connected with the drain end of the power tube; and
and the first end of the first transistor is connected with the second end of the first detection resistor, the control end of the first transistor is connected with the source end of the power tube, and the second end of the first transistor is used for outputting the sampling current.
4. The drain-source voltage detection circuit of claim 3, wherein the compensation module comprises:
a second transistor having a first terminal connected to a power supply voltage and a second terminal receiving the first mirror current;
a first end of the second detection resistor is connected with the power supply voltage, and a second end of the second detection resistor is connected with the control end of the second transistor; and
and a first end of the third transistor is connected with the second detection resistor and the common end of the second transistor, a control end of the third transistor is connected with a second end of the second transistor, and the second end of the third transistor is used for outputting the compensation current.
5. The drain-source voltage detection circuit of claim 4 wherein the output module comprises:
a fourth transistor, a first terminal of which is connected to the power supply voltage and a control terminal of which is connected to the second terminal, for receiving the second mirror current; and
a fifth transistor having a first terminal connected to the power supply voltage, a control terminal connected to a control terminal of the fourth transistor, and a second terminal connected to a second terminal of the third transistor,
wherein the fifth transistor superimposes the second mirror current with the compensation current to output the detection current.
6. The drain-source voltage detection circuit of claim 2, wherein the current mirror module comprises:
the first end of the sixth transistor is connected with the control end to receive the sampling current, and the second end of the sixth transistor is grounded;
a control end of the seventh transistor is connected with a control end of the sixth transistor, a first end of the seventh transistor is used for outputting the first mirror current, and a second end of the seventh transistor is grounded; and
and the control end of the eighth transistor is connected with the control end of the sixth transistor, the first end of the eighth transistor is used for outputting the second mirror current, and the second end of the eighth transistor is grounded.
7. The drain-source voltage detection circuit of claim 4, wherein the first and second detection resistors have equal resistance values, and the first and second transistors are selected from the same size transistors.
8. The drain-source voltage detection circuit of claim 5, wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are each selected from a P-type metal oxide semiconductor field effect transistor.
9. The drain-source voltage detection circuit of claim 6, wherein the sixth transistor, the seventh transistor, and the eighth transistor are each selected from an N-type metal oxide semiconductor field effect transistor.
10. A switching circuit comprising the drain-source voltage detection circuit of the power transistor according to any one of claims 1 to 9.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820968A (en) * | 1988-07-27 | 1989-04-11 | Harris Corporation | Compensated current sensing circuit |
| US7525333B1 (en) * | 2006-02-17 | 2009-04-28 | Semiconductor Components Industries, Llc | Current sense circuit |
| US20140347078A1 (en) * | 2013-05-21 | 2014-11-27 | Analog Devices Technology | Current sensing of switching power regulators |
| CN105988499A (en) * | 2015-02-16 | 2016-10-05 | 飞思卡尔半导体公司 | Power supply side voltage regulator |
| US20160313378A1 (en) * | 2015-04-27 | 2016-10-27 | Power Integrations, Inc. | Current sense ratio compensation |
| CN109617410A (en) * | 2018-12-28 | 2019-04-12 | 中国电子科技集团公司第五十八研究所 | A kind of novel floating voltage detection circuit |
-
2020
- 2020-12-03 CN CN202011411893.0A patent/CN114594357A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820968A (en) * | 1988-07-27 | 1989-04-11 | Harris Corporation | Compensated current sensing circuit |
| US7525333B1 (en) * | 2006-02-17 | 2009-04-28 | Semiconductor Components Industries, Llc | Current sense circuit |
| US20140347078A1 (en) * | 2013-05-21 | 2014-11-27 | Analog Devices Technology | Current sensing of switching power regulators |
| CN105988499A (en) * | 2015-02-16 | 2016-10-05 | 飞思卡尔半导体公司 | Power supply side voltage regulator |
| US20160313378A1 (en) * | 2015-04-27 | 2016-10-27 | Power Integrations, Inc. | Current sense ratio compensation |
| CN109617410A (en) * | 2018-12-28 | 2019-04-12 | 中国电子科技集团公司第五十八研究所 | A kind of novel floating voltage detection circuit |
Non-Patent Citations (1)
| Title |
|---|
| 郭杰荣 等: "微电流条件下的开关电流镜失配补偿及其在CAB中的应用", 湖南大学学报（自然科学版）, vol. 43, no. 2, 29 February 2016 (2016-02-29), pages 119 - 123 * |
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