CN114552335A - Semiconductor pump Nd-YAG laser multi-temperature point working temperature control method - Google Patents
Semiconductor pump Nd-YAG laser multi-temperature point working temperature control method Download PDFInfo
- Publication number
- CN114552335A CN114552335A CN202111619534.9A CN202111619534A CN114552335A CN 114552335 A CN114552335 A CN 114552335A CN 202111619534 A CN202111619534 A CN 202111619534A CN 114552335 A CN114552335 A CN 114552335A
- Authority
- CN
- China
- Prior art keywords
- temperature
- point
- working
- temperature control
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims abstract description 67
- 238000005086 pumping Methods 0.000 claims abstract description 58
- 239000013078 crystal Substances 0.000 claims abstract description 57
- 238000001228 spectrum Methods 0.000 claims description 8
- 230000003595 spectral effect Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 abstract description 8
- 230000031700 light absorption Effects 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 description 10
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The invention relates to a semiconductor pump Nd-YAG laser multi-temperature-point working temperature control method, and belongs to the technical field of semiconductor lasers. YAG crystal absorption cross section, through choosing a plurality of specific LD pumping source working temperature points, the temperature difference between LD working point temperature and environment temperature is reduced, the temperature difference between cold and hot surfaces of TEC is reduced under the condition of keeping constant pumping light absorption efficiency of laser gain medium, and the temperature control efficiency of TEC temperature control system is improved. The invention realizes the characteristics of low power consumption, quick response and the like of the laser temperature control system module during working by selecting a plurality of specific LD pumping source working temperature points, and ensures the temperature control scheme that the whole laser works stably and with low power consumption within a wide temperature range.
Description
Technical Field
The invention belongs to the technical field of semiconductor lasers, and particularly relates to a semiconductor pumping Nd-YAG laser multi-temperature-point working temperature control method.
Background
The LD pump Nd-YAG laser has the advantages of small volume, high efficiency, stable performance, long service life and the like, and has wide application in various fields such as military field, medical field, industrial field and the like. The LD pump laser generally uses an end-face or side-face pumping mode, uses a laser diode as a pumping source, and relies on an electro-cooler TEC (thermoelectric cooler) as a core temperature control system to realize mutual coupling between a pumping source spectrum and a crystal absorption spectrum. The working energy consumption and the temperature response speed of the TEC temperature control system directly influence the working performance of the whole laser. With the continuous deepening of the application of the laser, the LD pump laser which operates stably and with low power consumption in a wide temperature environment becomes an important direction for the research of the next generation of laser.
In the laser, the operating temperature of the LD pump source has a great influence on the output power, the operating stability and the operating energy consumption of the laser. The maladjustment of the temperature of the LD pumping source can cause the laser to generate a high-order transverse mode, thereby causing the reduction of the output power, influencing the indication of a target and having great influence on combat. Meanwhile, the temperature of the LD pump source increases to cause the output spectrum of the pump source to shift toward a long wavelength direction. Such a shift may cause a large change in the overlapping degree of the absorption spectrum and the emission spectrum of the laser gain medium, and it is difficult to ensure stable operation of the laser. When a traditional LD pumping Nd-YAG laser works in a wide temperature range, a TEC temperature control system is usually utilized to enable an LD pumping source to work only at a single temperature point, so that spectrum overlapping failure is avoided. Along with the widening of the temperature range of the working environment of the laser, the temperature difference between the working point temperature of the LD and the environmental limit temperature becomes larger, the working limit temperature difference between the cold surface and the hot surface of the TEC becomes larger, and the temperature control efficiency of the TEC temperature control system is reduced. This will lead to the increase of the energy consumption of the whole laser, the decrease of the working stability, the slow response speed of the temperature control and the increase of the volume and mass of the whole laser. Compared with a single-temperature-point working temperature control scheme, a double-temperature-point working temperature control scheme is provided, and two working temperature points of the scheme respectively correspond to two absorption peaks 796nm and 808nm of the Nd: YAG crystal. However, the pump light absorption cross section of the Nd: YAG crystal at 796nm is only 60% of that of the pump light at 808nm, and when the laser works at two temperature points, the absorption distribution of the crystal to the pump light is not completely consistent, which causes the gain distribution and the thermal focal length of the Nd: YAG crystal to be completely different, and the final laser output has a certain difference, so that the complete machine stable output of the laser is difficult to realize. YAG laser keeps stable, low-power consumption in the wide temperature environment working process of LD pumping Nd, reasonable LD pumping source temperature control scheme design is very necessary.
Disclosure of Invention
Technical problem to be solved
The invention aims to solve the technical problem of how to provide a semiconductor pumping Nd: YAG laser multi-temperature point working temperature control method, so as to solve the problems that the gain distribution and the thermal focal length of Nd: YAG crystals are completely different, the final laser output is different to a certain extent, and the complete machine stable output of the laser is difficult to realize.
(II) technical scheme
In order to solve the technical problem, the invention provides a semiconductor pump Nd-YAG laser multi-temperature point working temperature control method, which comprises the following steps:
s1, correcting the actual equivalent absorption cross section according to the formula (1) according to the actual spectral property of the LD pumping source;
wherein σ (λ) is Nd, YAG absorption cross section, n0Nd is doping concentration of YAG crystal; l is the effective absorption length of the crystal pump light; f (lambda) is the spectral distribution of the pump light, and the upper and lower integral limits lambdamin、λmaxIs Nd to YAG crystal absorptionThe limiting wavelength values of the left and right sides of the cross section;
s2, selecting a working wavelength point of an LD pumping source according to the corrected equivalent absorption cross section of the Nd-YAG crystal, and converting the working wavelength point to a corresponding working temperature point according to the formula (2);
wherein, T0Calibrating a temperature point for the central wavelength; lambda [ alpha ]0Is T0The central wavelength of the time LD pumping source; alpha is the temperature drift coefficient of the LD pumping source; lambda is a working wavelength point;
s3, for the operating temperature point obtained at S2, when the operating environment temperature is closer to which temperature point, the target temperature of the temperature control system is set to the operating temperature point.
Further, in step S1, for the LD pump source with a center wavelength of 790nm to 830nm and a full width at half maximum of the spectrum of 4nm, the actual equivalent absorption cross section is corrected according to the formula (1) based on the exponential absorption model.
Further, in step S1, f (λ) is gaussian distributed for the monochromatic LD pump source.
Further, in the step S2, the maximum absorption cross section of the equivalent absorption cross section of the Nd: YAG crystal after the correction is 809 nm.
Further, the selecting the working wavelength point of the LD pumping source according to the modified equivalent absorption cross section of the Nd: YAG crystal specifically includes: and selecting the intersection point position of the horizontal line and the equivalent absorption cross section as the working wavelength point of the LD pumping source.
Further, the operating wavelength points were 793.21nm,795.93nm,803.73nm,813.81 nm.
Further, the upper and lower positions of the horizontal line determine the maximum value of the distance between the adjacent operating points, the maximum value varies with the position of the horizontal line, and when the maximum value takes the minimum value, the optimal operating wavelength point of the system is obtained.
Furthermore, the equivalent absorption cross sections of the Nd: YAG crystal at each working wavelength point to the pump light are all1.30×10-20cm2About 1/2 for the maximum equivalent absorption cross-section; when the LD pumping source works at the selected wavelength point, the absorption of the crystal to the pumping light is completely the same as that of the thermal lens of the crystal due to the consistent equivalent absorption cross section, and finally the output of the laser is kept consistent; by designing proper crystal doping concentration and crystal absorption length, the total absorption rate of the crystal to the pump light is met, and the energy utilization efficiency of the laser system is ensured.
Furthermore, the drift coefficient of the LD pumping source wavelength with temperature is 0.28 nm/DEG C.
Further, the step S3 further includes: current compensation was performed at each temperature point: the working point is selected first, and then the working current of the LD pumping source is adjusted according to the output laser energy.
(III) advantageous effects
The invention provides a semiconductor pump Nd-YAG laser multi-temperature point working temperature control method, which is a temperature control scheme for realizing the characteristics of low power consumption, quick response and the like of a laser temperature control system module during working by selecting a plurality of specific LD pump source working temperature points and ensuring the stable and low-power-consumption working of the whole laser within a wide temperature range.
The laser has high output stability. YAG crystal absorbs pumping light uniformly, and can ensure that gains and thermal focal distances in the crystal are consistent, thereby obtaining consistent and stable laser output when a plurality of temperature points work.
The laser complete machine provided by the invention has low power consumption when working in a wide temperature range. Compared with Nd-YAG laser operated in other temperature control modes, the limit temperature difference between the LD pumping source system and the environment is effectively reduced under the same operating condition, and the maximum temperature difference does not exceed 18.4 ℃ in a temperature region of 110 ℃. The temperature difference between the cold surface and the hot surface of the TEC during working is reduced, the response speed of the TEC temperature control system is increased, and the working energy consumption of the TEC temperature control system is reduced. The working stability of the whole laser is improved, and the working energy consumption is reduced.
The laser has small volume and mass. Because the energy consumption of the TEC system is reduced, the volume and the mass of the whole TEC system can be correspondingly reduced, and the volume and the mass of the whole laser are reduced.
The scheme of the invention is easy to implement. Under the condition of not changing the working state of other parts of the whole laser, the invention can realize the function only by setting the TEC system multi-temperature-point working mode and adding no extra hardware.
The laser has more reasonable working temperature point. According to the invention, the absorption cross section of the Nd-YAG crystal is corrected to a certain extent according to the shape of the LD pumping source, the corrected absorption cross section is more in accordance with the engineering practice, and compared with the case of using uncorrected data, the working point selection of the scheme is more reasonable.
The scheme of the invention has wide application range. Besides lasers using Nd: YAG crystals as laser gain media, other gain media type lasers can also realize stable and low-power-consumption operation by using the scheme.
Drawings
FIG. 1 is an absorption cross section of Nd: YAG crystal;
FIG. 2 is a modified Nd: YAG crystal absorption cross section.
Detailed Description
In order to make the objects, contents, and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
The invention relates to a temperature control scheme for a pumping source working temperature in the field of semiconductor Laser (LD, Laser Diode) pumping Nd, namely YAG Laser, which realizes the characteristics of low power consumption, quick response and the like of a Laser temperature control system module during working by selecting a plurality of specific LD pumping source working temperature points and ensures that the whole Laser works stably in a wide temperature range and with low power consumption.
Aiming at the defects of the prior art, the invention provides a multi-temperature-point control scheme of the pump source TEC temperature control system, which can realize stable and low-power-consumption work of an LD pump laser.
According to the scheme, the absorption cross section of the Nd-YAG crystal is corrected according to the actual spectral property of the LD pumping source, the temperature difference between the temperature of the LD working point and the ambient temperature is reduced by selecting a plurality of specific LD pumping source working temperature points, the temperature difference between a cold surface and a hot surface of the TEC is reduced under the condition that the absorption efficiency of a laser gain medium on pumping light is kept constant, and the temperature control efficiency of the TEC temperature control system is improved.
Referring to fig. 1 and 2, in the implementation example described below, the semiconductor pumping Nd: YAG laser multi-temperature point operation temperature control scheme includes the steps of correcting an absorption cross section of Nd: YAG crystal, selecting an LD pumping source operation temperature point, determining a TEC system operation scheme, and the like.
1. Modified Nd: YAG crystal absorption cross section
YAG crystal to single wavelength pump light absorption cross section data as figure 1, considering the practical LD pump source has finite spectrum width physical characteristics, need to according to the pump light spectrum shape to the actual absorption cross section correction. For the common LD pumping source with the center wavelength between 790nm and 830nm and the spectrum full width at half maximum of 4nm, the actual equivalent absorption section is corrected according to the formula (1) on the basis of an exponential absorption model.
Wherein, sigma (lambda) is Nd, YAG absorption cross section condition, and specific data are shown in figure 1; n is0Doping concentration of Nd and YAG crystal; l is the effective absorption length of the crystal pump light; f (lambda) is the spectral distribution of the pump light, and the monochromatic LD pump source can adopt Gaussian distribution; upper and lower integral limits lambdamin、λmaxThe absorption cross section of the YAG crystal is the absorption cross section of Nd, and the absorption cross section of the YAG crystal is the absorption cross section of the right side and the left side of the absorption cross section of the Nd.
2. Selecting working temperature point of LD pumping source
YAG crystal as a modified Nd, the equivalent absorption cross section data of which is shown in FIG. 2 (solid line), the maximum absorption cross section is 2.81X 10-20cm2At 809 nm. The intersection positions of the horizontal broken line and the solid line of the equivalent absorption cross section in FIG. 2 were selected, [793.21nm,795.93nm,803.73nm,813.81nm]And the laser is used as an operating wavelength point of an LD pumping source. Wherein the upper and lower positions of the dotted line determine the maximum value of the distance between adjacent working points, the maximum value following the dotted lineThe position is changed, and when the value is minimum, the optimal working wavelength point of the system can be obtained. The equivalent absorption cross section of the Nd: YAG crystal at each working wavelength point to the pump light is 1.30 multiplied by 10-20cm2About 1/2 for the maximum equivalent absorption cross-section. When the LD pumping source works at the selected wavelength point, the absorption of the crystal to the pumping light and the thermal lens of the crystal are completely the same because the equivalent absorption cross section is the same, and finally the output of the laser is kept consistent. Meanwhile, by designing proper crystal doping concentration and crystal absorption length, the total absorption rate of the crystal to the pump light can be met, and the energy utilization efficiency of the laser system can be ensured.
In order to facilitate the setting of the temperature control point of the TEC system, the working wavelength point is converted to the corresponding working temperature point according to the formula (2).
Wherein, T0Calibrating a temperature point for the central wavelength; lambda [ alpha ]0Is T0The central wavelength of the time LD pumping source; alpha is the temperature drift coefficient of the LD pumping source, and lambda is the working wavelength point.
The drift coefficient of the LD pumping source wavelength with temperature is 0.28 nm/deg.C, and for the LD pumping source with central wavelength at 808.0nm at 26.3 deg.C, the working wavelength points can be converted into the corresponding LD working temperature points of-26.6 deg.C, -16.9 deg.C, -11.0 deg.C, and 47.0 deg.C according to the temperature drift rule.
TEC System working scheme
The specific working scheme of the TEC temperature control system is as follows: for the operating temperature point determined in 2, when the operating environment temperature is closer to which temperature point, the target temperature of the temperature control system is set to the operating temperature point. Under the temperature control scheme, when the ambient temperature is between minus 45 ℃ and 65 ℃ (the working temperature zone span is 110 ℃), the maximum temperature difference between the target temperature control point of the TEC temperature control system and the ambient temperature does not exceed 18.4 ℃. In a typical single-temperature-point operating scheme, the maximum temperature difference can reach 55 ℃. The smaller temperature difference can bring faster response speed and lower working energy consumption of the TEC temperature control system. In consideration of the problem of working efficiency of the LD pumping source, certain current compensation is needed at each temperature point, in the actual engineering design, a working point is selected firstly, then the working current of the LD pumping source is adjusted according to the output laser energy, and each working temperature point needs to be slightly adjusted near the original working point.
The laser has high output stability. The invention selects a plurality of LD pumping source working temperature points, and the absorption of the Nd: YAG crystal to the pumping light is consistent at each working temperature point, thereby ensuring the gain and the thermal focal distance in the crystal to be consistent, and further obtaining the consistent and stable output of the laser when a plurality of temperature points work.
The laser complete machine has low power consumption when working in a wide temperature range. Compared with Nd-YAG laser operated in other temperature control modes, the limit temperature difference between the LD pumping source system and the environment is effectively reduced under the same operating condition, and the maximum temperature difference does not exceed 18.4 ℃ in a temperature region of 110 ℃. The temperature difference between the cold surface and the hot surface of the TEC during working is reduced, the response speed of the TEC temperature control system is increased, and the working energy consumption of the TEC temperature control system is reduced. The working stability of the whole laser is improved, and the working energy consumption is reduced.
The whole volume and the mass of the laser are reduced. Because the energy consumption of the TEC system is reduced, the volume and the mass of the whole TEC system can be correspondingly reduced, and the volume and the mass of the whole laser are reduced.
The scheme of the invention is easy to implement. Under the condition of not changing the working state of other parts of the whole laser, the invention can realize the function only by setting the TEC system multi-temperature-point working mode and adding no extra hardware.
The laser has more reasonable working temperature point. According to the invention, the absorption cross section of the Nd-YAG crystal is corrected to a certain extent according to the shape of the LD pumping source, the corrected absorption cross section is more in accordance with the engineering practice, and compared with the case of using uncorrected data, the working point selection of the scheme is more reasonable.
The scheme of the invention has wide application range. Besides lasers using Nd: YAG crystals as laser gain media, other gain media type lasers can also realize stable and low-power-consumption operation by using the scheme.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A semiconductor pump Nd-YAG laser multi-temperature point working temperature control method is characterized by comprising the following steps:
s1, correcting the actual equivalent absorption cross section according to the formula (1) according to the actual spectral property of the LD pumping source;
wherein σ (λ) is Nd, YAG absorption cross section, n0Doping concentration of Nd and YAG crystal; l is the effective absorption length of the crystal pump light; f (lambda) is the spectral distribution of the pump light, and the upper and lower integral limits lambdamin、λmaxThe absorption cross section of the YAG crystal is a limiting wavelength value at the left side and the right side of the absorption cross section of the Nd crystal;
s2, selecting a working wavelength point of an LD pumping source according to the corrected equivalent absorption cross section of the Nd-YAG crystal, and converting the working wavelength point to a corresponding working temperature point according to the formula (2);
wherein, T0Calibrating a temperature point for the central wavelength; lambda [ alpha ]0Is T0The central wavelength of the LD pumping source; alpha is the temperature drift coefficient of the LD pumping source; lambda is a working wavelength point;
s3, for the operating temperature point obtained at S2, when the operating environment temperature is closer to which temperature point, the target temperature of the temperature control system is set to the operating temperature point.
2. YAG laser multi-temperature point working temperature control method of semiconductor pump Nd, in the step S1, for the center wavelength between 790 nm-830 nm, the spectrum half-height width is 4nm LD pumping source, based on the index absorption model, according to the formula (1) to correct the actual equivalent absorption cross section.
3. YAG laser multi-temperature point operation temperature control method of semiconductor pump Nd, in the step S1, f (lambda) adopts Gaussian distribution for monochromatic LD pump source.
4. The temperature control method for the multiple temperature points operation of semiconductor-pumped Nd: YAG laser according to any of claims 1 to 3, wherein in the step S2, the maximum absorption cross section of the equivalent absorption cross section of the modified Nd: YAG crystal is 809 nm.
5. The method for controlling the temperature of the semiconductor-pumped Nd: YAG laser multi-temperature-point operation according to any one of claims 1 to 3, wherein the selecting the operating wavelength point of the LD pump source according to the corrected equivalent absorption cross section of the Nd: YAG crystal specifically comprises: and selecting the intersection point position of the horizontal line and the equivalent absorption cross section as the working wavelength point of the LD pumping source.
6. The temperature control method for the multi-temperature-point operation of the semiconductor-pumped Nd-YAG laser device according to claim 5, wherein the operating wavelength points are 793.21nm,795.93nm,803.73nm and 813.81 nm.
7. YAG laser multi-temperature point operation temperature control method of semiconductor pump Nd: YAG laser in claim 5, characterized in that the upper and lower position of the horizontal line determines the maximum value of the distance between the adjacent operating points, the maximum value varies with the position of the horizontal line, when the maximum value gets the minimum value, the optimal operating wavelength point of the system is obtained.
8. The method of claim 5 in which the Nd-YAG crystal is operated at each operating pointThe equivalent absorption cross sections of the wavelength points to the pump light are all 1.30 multiplied by 10-20cm2About 1/2 for the maximum equivalent absorption cross-section; when the LD pumping source works at the selected wavelength point, the absorption of the crystal to the pumping light is completely the same as that of the thermal lens of the crystal due to the consistent equivalent absorption cross section, and finally the output of the laser is kept consistent; by designing proper crystal doping concentration and crystal absorption length, the total absorption rate of the crystal to the pump light is met, and the energy utilization efficiency of the laser system is ensured.
9. The temperature control method for the multiple-temperature-point operation of the semiconductor-pumped Nd-YAG laser in claim 5, wherein the drift coefficient of the LD pump source wavelength with temperature is 0.28 nm/DEG C.
10. YAG laser multi-temperature point operation temperature control method of semiconductor pump Nd: YAG laser according to any of claims 6-9, characterized in that the step S3 further comprises: current compensation was performed at each temperature point: the working point is selected first, and then the working current of the LD pumping source is adjusted according to the output laser energy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111619534.9A CN114552335B (en) | 2021-12-27 | 2021-12-27 | Multi-temperature-point working temperature control method for semiconductor pumping Nd-YAG laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111619534.9A CN114552335B (en) | 2021-12-27 | 2021-12-27 | Multi-temperature-point working temperature control method for semiconductor pumping Nd-YAG laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114552335A true CN114552335A (en) | 2022-05-27 |
| CN114552335B CN114552335B (en) | 2023-10-24 |
Family
ID=81670430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111619534.9A Active CN114552335B (en) | 2021-12-27 | 2021-12-27 | Multi-temperature-point working temperature control method for semiconductor pumping Nd-YAG laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114552335B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6347101B1 (en) * | 1998-04-16 | 2002-02-12 | 3D Systems, Inc. | Laser with absorption optimized pumping of a gain medium |
| US20030185264A1 (en) * | 2001-12-28 | 2003-10-02 | Communications Res. Lab., Ind. Admin. Inst. | Diode-pumped solid-state laser oscillator |
| CN2872683Y (en) * | 2006-03-21 | 2007-02-21 | 吴砺 | Semiconductor pump laser in range of wide temperature |
| CN101281338A (en) * | 2007-04-02 | 2008-10-08 | 清华大学 | Method and product avoiding strict controlling pumping wavelength in optical fiber amplifier or laser |
| CN101882750A (en) * | 2009-05-06 | 2010-11-10 | 武汉华工激光工程有限责任公司 | Semiconductor end-pumped high-power single-mode air cooling laser |
| WO2012093993A1 (en) * | 2011-01-04 | 2012-07-12 | Ipg Photonics Corporation | Methof for stabilizing optical output power of fiber laser |
| CN104393475A (en) * | 2014-08-19 | 2015-03-04 | 林安英 | All-solid-state laser |
| CN109378685A (en) * | 2018-12-19 | 2019-02-22 | 中国电子科技集团公司第十研究所 | Pump arrangement |
-
2021
- 2021-12-27 CN CN202111619534.9A patent/CN114552335B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6347101B1 (en) * | 1998-04-16 | 2002-02-12 | 3D Systems, Inc. | Laser with absorption optimized pumping of a gain medium |
| US20030185264A1 (en) * | 2001-12-28 | 2003-10-02 | Communications Res. Lab., Ind. Admin. Inst. | Diode-pumped solid-state laser oscillator |
| CN2872683Y (en) * | 2006-03-21 | 2007-02-21 | 吴砺 | Semiconductor pump laser in range of wide temperature |
| CN101281338A (en) * | 2007-04-02 | 2008-10-08 | 清华大学 | Method and product avoiding strict controlling pumping wavelength in optical fiber amplifier or laser |
| CN101882750A (en) * | 2009-05-06 | 2010-11-10 | 武汉华工激光工程有限责任公司 | Semiconductor end-pumped high-power single-mode air cooling laser |
| WO2012093993A1 (en) * | 2011-01-04 | 2012-07-12 | Ipg Photonics Corporation | Methof for stabilizing optical output power of fiber laser |
| CN104393475A (en) * | 2014-08-19 | 2015-03-04 | 林安英 | All-solid-state laser |
| CN109378685A (en) * | 2018-12-19 | 2019-02-22 | 中国电子科技集团公司第十研究所 | Pump arrangement |
Non-Patent Citations (1)
| Title |
|---|
| 高恒等: "激光二极管侧面抽运免温控激光器的研究", 激光技术, vol. 43, no. 1, pages 1 - 5 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114552335B (en) | 2023-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen | Design criteria for concentration optimization in scaling diode end-pumped lasers to high powers: influence of thermal fracture | |
| CN101752779B (en) | Combined large-diameter neodymium glass disk laser amplifier of gradient doping component | |
| CN105591267A (en) | Multi-wavelength pumped temperature control-free solid-state laser and multi-wavelength selection method | |
| CN101465513B (en) | Bistable Tm,Ho:YLE laser with bistable zone and adjustable width | |
| CN102484351B (en) | Fiber laser apparatus | |
| CN103928831B (en) | Dot matrix output solid laser based on Dammann grating | |
| CN102983482B (en) | Fiber laser with multi-wavelength equal-interval pump light sources | |
| CN110030987A (en) | A kind of high-power Gaussian spectrum ASE light source of fibre optic gyroscope | |
| CN114552335A (en) | Semiconductor pump Nd-YAG laser multi-temperature point working temperature control method | |
| CN102638002A (en) | Solid laser with low power consumption | |
| CN102931575A (en) | High-power semiconductor pumping source with stable wavelength and pumping method | |
| Cho et al. | Analysis of the optimal temperature for the cryogenic monolithic Nd: YAG laser at 946-nm | |
| CN101252251A (en) | Wide temperature low-power consumption semiconductor pumping laser | |
| CN113708199A (en) | Non-water-cooling multimode selective fiber laser system | |
| CN204905648U (en) | Optic fibre - mixed laser instrument of diode pumped solid | |
| Wang et al. | Determination of thermal focal length under different depths of focus in asymmetrical flat-flat dynamically stable resonators | |
| CN203367739U (en) | Linearly polarized laser output high-power optical fiber amplifier | |
| CN102593700A (en) | Three-wavelength laser device without gain competition | |
| CN216355283U (en) | Stable fiber laser | |
| CN102280800A (en) | Laser thermal effect compensating system | |
| CN114300922B (en) | Method for improving working stability of fiber laser | |
| CN221126526U (en) | 2-Micrometer all-fiber laser with cascade grating cavity mirror | |
| CN110277723A (en) | Optimize the method for the related transient response of high-capacity optical fiber laser heat | |
| CN212648731U (en) | Pump light source wavelength locking system with Nd-YAG as main doping medium | |
| CN200987036Y (en) | Refrigeration-free 980 pumped laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |