CN114551669A - Light-emitting device, preparation method thereof and display device - Google Patents

Light-emitting device, preparation method thereof and display device Download PDF

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Publication number
CN114551669A
CN114551669A CN202210179662.4A CN202210179662A CN114551669A CN 114551669 A CN114551669 A CN 114551669A CN 202210179662 A CN202210179662 A CN 202210179662A CN 114551669 A CN114551669 A CN 114551669A
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epitaxial structure
film
layer
light
metal layer
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Inventor
王飞
梁轩
王明星
齐琪
杨明坤
董学
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Abstract

The embodiment of the disclosure provides a light emitting device, a preparation method thereof and a display device, wherein the light emitting device comprises: a first metal layer; the first epitaxial structure is positioned on one side of the first metal layer; the second epitaxial structure is positioned on one side of the first epitaxial structure, which is far away from the first metal layer; the second metal layer is positioned between the first epitaxial structure and the second epitaxial structure and is provided with a hollow part; and the transparent conducting layer is positioned on one side of the second epitaxial structure, which is deviated from the first metal layer. The technical scheme of the embodiment of the disclosure can improve the luminance of the light emitting device.

Description

Light-emitting device, preparation method thereof and display device
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a light emitting device, a manufacturing method thereof and a display device.
Background
At present, the light-emitting brightness is low due to the structural limitation of the light-emitting device, and the light-emitting device is not suitable for preparing a high-resolution display product.
Disclosure of Invention
The embodiment of the disclosure provides a light emitting device, a manufacturing method thereof and a display device, so as to solve or alleviate one or more technical problems in the prior art.
As one aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a light emitting device including:
a first metal layer;
the first epitaxial structure is positioned on one side of the first metal layer;
the second epitaxial structure is positioned on one side of the first epitaxial structure, which is far away from the first metal layer;
the second metal layer is positioned between the first epitaxial structure and the second epitaxial structure and is provided with a hollow part;
and the transparent conducting layer is positioned on one side of the second epitaxial structure, which is deviated from the first metal layer.
In one embodiment, the light emitted from the first epitaxial structure and the light emitted from the second epitaxial structure are within the same wavelength band.
In one embodiment, the second metal layer further includes a bonding portion, and an orthographic projection of the hollow portion on the first metal layer is located within an orthographic projection range of the bonding portion on the first metal layer.
In one embodiment, the second metal layer further includes two bonding portions, and orthographic projections of the two bonding portions on the first metal layer are respectively located on two opposite sides of an orthographic projection of the hollow portion on the first metal layer.
In one embodiment, an orthographic projection of the bonding part on the first metal layer and an orthographic projection of the hollow part on the first metal layer cover the first metal layer, and an area of the orthographic projection of the hollow part on the first metal layer is greater than or equal to one half of an area of the first metal layer and smaller than the area of the first metal layer.
In one embodiment, the light emitting device further includes: the first light adjusting layer and the second metal layer are arranged on the same layer and are located at the positions of the hollow parts.
In one embodiment, the first epitaxial structure and the second epitaxial structure respectively include a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked along the light emitting direction, and the second semiconductor layer of the second epitaxial structure protrudes toward a direction away from the first metal layer to form a second light adjusting layer.
In one embodiment, the light emitting device further includes: the second light adjusting layer is arranged on one side, away from the first metal layer, of the second epitaxial structure.
In one embodiment, an orthographic projection of the hollow portion on the first metal layer overlaps with an orthographic projection of the second light adjusting layer on the first metal layer, and a refractive index of the hollow portion is smaller than a refractive index of the second epitaxial structure.
In one embodiment, the first epitaxial structure and the second epitaxial structure respectively include a first current diffusion layer, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a second current diffusion layer stacked along a light emitting direction, and the first current diffusion layer and the second current diffusion layer are made of transparent conductive materials.
In one embodiment, the first epitaxial structures are multiple, the multiple first epitaxial structures are stacked between the second epitaxial structures and the first metal layers, and the second metal layers are disposed between adjacent first epitaxial structures.
As another aspect of embodiments of the present disclosure, embodiments of the present disclosure provide a display apparatus including the light emitting device of any one of the above embodiments.
As still another aspect of the embodiments of the present disclosure, there is provided a method of manufacturing a light emitting device, including:
respectively forming a first wafer and a second wafer; the first wafer is provided with a first substrate, a first epitaxial structure film and a first metal film, wherein the first epitaxial structure film and the first metal film are stacked on one side of the first substrate, the first metal film is provided with a plurality of hollow parts, and the second wafer is provided with a second substrate and a second epitaxial structure film located on one side of the second substrate;
bonding one side of the second epitaxial structure film, which is far away from the second substrate, with one side of the first metal film, which is far away from the first substrate, and stripping the first substrate;
forming a second metal film on one side of the first epitaxial structure film, which is far away from the first metal film;
patterning the second metal film, the first epitaxial structure film, the first metal film and the second epitaxial structure film respectively to form a plurality of light-emitting units so that the light-emitting units are provided with hollow parts;
and stripping the second substrate, and forming a transparent conductive layer on one side of the light-emitting unit, which is far away from the patterned second metal film, so as to form the light-emitting device.
In one embodiment, forming the second wafer includes: and forming a first light adjusting film at the position of the hollow part.
In one embodiment, forming the second wafer includes:
forming a first semiconductor film, a light emitting film, a second semiconductor film, and a mask pattern in this order on one side of a growth substrate;
transferring the mask pattern onto the second semiconductor film;
a second substrate is arranged on the side of the second semiconductor film facing away from the growth substrate, and the growth substrate is peeled off.
In one embodiment, the first epitaxial structure film includes a plurality of first epitaxial structure films stacked along the light-emitting direction, the plurality of first epitaxial structure films include a bottom layer epitaxial structure film located at a bottom layer in the light-emitting direction, and the second metal film is formed on a side of the first epitaxial structure film away from the first metal film, including:
and forming a second metal film on one side of the bottom layer epitaxial structure film, which is far away from the first metal film.
By adopting the technical scheme, the first epitaxial structure and the second epitaxial structure are arranged between the first metal layer and the transparent conducting layer in a stacked mode, the second metal layer with the hollow part is arranged between the first epitaxial structure and the second epitaxial structure, and when voltage is applied to the first metal layer and the transparent conducting layer, light emitted by the first epitaxial structure can be mixed with light emitted by the second epitaxial structure through the hollow part and emitted out, so that the light-emitting brightness of the light-emitting device is improved, the light-emitting device is suitable for preparing high-resolution display products, and is particularly suitable for preparing Micro LED display products.
The foregoing summary is provided for the purpose of description only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present disclosure will be readily apparent by reference to the drawings and following detailed description.
Drawings
In the drawings, like reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily to scale. It is appreciated that these drawings depict only some embodiments in accordance with the disclosure and are not to be considered limiting of its scope.
Fig. 1 shows a schematic cross-sectional view of a light emitting device according to a first embodiment of the present disclosure.
Fig. 2A shows a schematic top view of a second metal layer according to an embodiment of the disclosure.
Fig. 2B illustrates another schematic top view of a second metal layer in accordance with an embodiment of the disclosure.
Fig. 2C shows yet another schematic top view of a second metal layer in accordance with an embodiment of the present disclosure.
Fig. 3A shows a schematic cross-sectional view of a light emitting device according to a second embodiment of the present disclosure.
Fig. 3B shows a schematic cross-sectional view of another light emitting device according to a second embodiment of the present disclosure.
Fig. 4 shows a schematic cross-sectional view of a light emitting device according to a third embodiment of the present disclosure.
Fig. 5 shows a schematic flow chart of a method of manufacturing a light emitting device according to a fourth embodiment of the present disclosure.
Fig. 6 shows a schematic flow chart of a method of manufacturing a light emitting device according to a fifth embodiment of the present disclosure.
Fig. 7 shows a schematic flow chart of a method of manufacturing a light emitting device according to a sixth embodiment of the present disclosure.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art can appreciate, the described embodiments can be modified in various different ways, without departing from the spirit or scope of the present disclosure. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the related art, a Light Emitting device such as an LED (Light Emitting Diode) chip generally has only a single epitaxial structure, and the Light Emitting brightness is low. When a display product is manufactured using the light emitting device of such a structure, the luminance is generally improved by increasing the area or the number of the light emitting devices arranged, but this may reduce the display resolution, resulting in that the light emitting device is not suitable for manufacturing a high-resolution display product.
To solve the above technical problem, embodiments of the present disclosure provide a light emitting device. The following describes embodiments of the present disclosure with reference to the drawings.
Fig. 1 shows a schematic cross-sectional view of a light emitting device 100 according to a first embodiment of the present disclosure. The light emitting device of the embodiment of the present disclosure includes, but is not limited to, a micron light emitting diode (Micro LED for short) and a sub-millimeter light emitting diode (Mini LED for short) in the micron order, and the type and size of the light emitting device 100 may be selected and adjusted according to actual needs.
As shown in fig. 1, the light emitting device 100 includes a first metal layer 11, a first epitaxial structure 12, a second epitaxial structure 13, and a second metal layer 14. The first epitaxial structure 12 is located on one side of the first metal layer 11, the second epitaxial structure 13 is located on one side of the first epitaxial structure 12 away from the first metal layer 11, the second metal layer 14 is located between the first epitaxial structure 12 and the second epitaxial structure 13, and the second metal layer 14 has a hollow portion 141; and a transparent conductive layer 15 located on a side of the second epitaxial structure 13 away from the first metal layer 11. The first metal layer 11 may be one of gold (Au), silver (Ag), nickel (Ni), copper (Cu), and alloys thereof. The second metal layer 12 may be at least one of gold, silver, nickel, copper, and the like, or may be one of transparent conductive materials such as Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
Illustratively, the first epitaxial structure 12 and the second epitaxial structure 13 respectively include a first semiconductor layer 121, a light emitting layer 122, and a second semiconductor layer 123 stacked along a light emitting direction, which may be an overall light emitting direction of the light emitting device 100, for example, a direction in which the first metal layer 11 points to the transparent conductive layer 15. Wherein the first semiconductor layer 121 is an electron transport layer, and the second semiconductor layer 123 is a hole transport layer; alternatively, the first semiconductor layer 121 is a hole transport layer, and the second semiconductor layer 123 is an electron transport layer. The light emitting layer 122 is a multiple quantum well layer. The first epitaxial structure 12 and the second epitaxial structure 13 form a PN junction, and when a voltage is applied to the first metal layer 11 and the transparent conductive layer 15, the mqw layer 122 of the first epitaxial structure 12 and the second epitaxial structure 13 emits light, thereby realizing light emission of the first epitaxial structure 12 and the second epitaxial structure 13.
Illustratively, the second metal layer 14 is disposed between the first epitaxial structure 12 and the second epitaxial structure 13, such that the first epitaxial structure 12 and the second epitaxial structure 13 are connected in series, i.e., such that two PN junctions are connected in series. When the first epitaxial structure 12 and the second epitaxial structure 13 emit light, the light emitted from the first epitaxial structure 12 can be mixed with the light emitted from the second epitaxial structure 13 through the hollow portion 141 and emitted along the light emitting direction, so that the light emitting device 100 has a strong light emitting brightness.
In the related art, the light emitting device having a single epitaxial structure has low emission luminance and is not suitable for the preparation of a high-resolution display product. In the embodiment of the disclosure, the first epitaxial structure 12 and the second epitaxial structure 13 are stacked between the first metal layer 11 and the transparent conductive layer 15, and the second metal layer 14 having the hollow portion 141 is disposed between the first epitaxial structure 12 and the second epitaxial structure 13, so that when a voltage is applied to the first metal layer 11 and the transparent conductive layer 15, light emitted from the first epitaxial structure 12 can be mixed and emitted through the hollow portion 141 and light emitted from the second epitaxial structure 13, thereby improving the light emitting brightness of the light emitting device 100, making it suitable for preparing a high-resolution display product, and especially suitable for preparing a Micro LED display product.
In one embodiment, the light emitted from the first epitaxial structure 12 and the light emitted from the second epitaxial structure 13 are within the same wavelength band.
Illustratively, the light emitted by the first epitaxial structure 12 and the second epitaxial structure 13 is in a red wavelength band, a green wavelength band, or a blue wavelength band. Wherein, the wave band range of the red light wave band is 622nm to 780nm (including end points), the wave band range of the green light wave band is 492nm to 577nm (including end points), and the wave band range of the blue light wave band is 455nm to 492nm (including end points).
For example, referring to fig. 3A or fig. 4, the first semiconductor layer 121 may be an N-type semiconductor, and the second semiconductor layer 123 may be a P-type semiconductor; alternatively, the material of the first semiconductor layer 121 may be a P-type semiconductor, and the material of the second semiconductor layer 123 may be an N-type semiconductor. By selecting different types of materials, the first epitaxial structure 12 and the second epitaxial structure 13 can emit different colors of light. For example, the N-type semiconductor may be at least one of GaN, Si-doped GaN, and Si-doped AlGaN, the P-type semiconductor may be at least one of Mg-doped GaN and Mg-doped AlGaN, the light emitting layer 122 may be InGaN, and the ratio of indium (In) In the InGaN alloy is adjusted to enable the light emitted by the first epitaxial structure 12 and the second epitaxial structure 13 to be In the blue or green wavelength band. The intrinsic semiconductors of the N-type semiconductor and the P-type semiconductor are both InGaAlP, so that the light emitted by the first epitaxial structure 12 and the light emitted by the second epitaxial structure 13 are in the red light band.
According to the scheme, the light emitted by the first epitaxial structure 12 and the light emitted by the second epitaxial structure 13 are in the same waveband range, so that the light-emitting brightness of the light-emitting device 100 is increased. It is understood that the light emitted from the first epitaxial structure 12 and the second epitaxial structure 13 may be arranged in different wavelength bands when it is desired to mix light in different wavelength bands.
In one embodiment, as shown in fig. 2A and 2B, the second metal layer 14 further includes a bonding portion 142, and an orthographic projection of the hollow portion 141 on the first metal layer 11 is located within an orthographic projection range of the bonding portion 142 on the first metal layer 11. Illustratively, the orthographic projection of the bonding part 142 on the first metal layer 11 surrounds the orthographic projection of the hollow part 141 on the first metal layer 11. The shape of the orthographic projection of the hollow portion 141 on the first metal layer 11 and the shape of the orthographic projection of the bonding portion 142 on the first metal layer 11 can be selected and adjusted according to actual needs. For example, the orthographic projection of the hollow portion 141 on the first metal layer 11 may be one of a closed figure such as a circle, an ellipse, a rectangle, a square, a pentagon and a hexagon. The orthographic projection of the bonding portion 142 on the first metal layer 11 may be a ring-shaped structure having an outer contour and an inner contour, wherein the geometric center of the outer contour and the geometric center of the inner contour coincide, and the outer contour and the inner contour may be in any shape such as a circle, an ellipse, a rectangle, a square, or a polygon.
A part of light emitted from the first epitaxial structure 12 passes through the hollow portion 141 of the second metal layer 14 to mix with light emitted from the second epitaxial structure 13, and another part of light emitted from the first epitaxial structure 12 is reflected by the bonding portion 142 and the first metal layer 11 in sequence, and then enters the second epitaxial structure 13 through the hollow portion 141 to mix, which is beneficial to increasing the luminous intensity and realizing small-area light emission.
In one embodiment, as shown in fig. 2C, the second metal layer 14 further includes two bonding portions 142, and orthographic projections of the two bonding portions 142 on the first metal layer 11 are respectively located on two opposite sides of an orthographic projection of the hollow portion 141 on the first metal layer 11. Illustratively, the periphery of the orthographic projection of the bonding part 142 on the first metal layer 11 is at least partially surrounded by the orthographic projection of the hollow part 141 on the first metal layer 11. The shape of the orthographic projection of the bonding portion 142 on the first metal layer 11 can be selected and adjusted according to actual needs, for example, the orthographic projection of the bonding portion 142 on the first metal layer 11 can be one of a closed figure such as a circle, an ellipse, a square and a rectangle. Thus, the bonding portion 142 is made smaller, and the bonding portion 142 is prevented from blocking the light emitted from the first epitaxial structure 12.
In one embodiment, as shown in fig. 2A to 2C, an orthographic projection of the bonding portion 142 on the first metal layer 11 and an orthographic projection of the hollow portion 141 on the first metal layer 11 cover the first metal layer 11, and an area of the orthographic projection of the hollow portion 141 on the first metal layer 11 is greater than or equal to one half of an area of the first metal layer 11 and smaller than the area of the first metal layer 11. By setting the area of the orthographic projection of the hollow portion 141 on the first metal layer 11 to be larger, the light emitted by the first epitaxial structure 12 conveniently passes through the hollow portion 141 as much as possible, and the shielding of the bonding portion 142 on the light is reduced. It should be noted that the size of the hollowed-out portion 141 and the key-on portion 142, for example, the length, side length, diameter, area, and the like of the diagonal of the geometric outline of the hollowed-out portion 141 and the key-on portion 142, may be selected and adjusted according to the actual requirement, and the embodiment of the disclosure does not limit the size.
In one embodiment, as shown in fig. 3A, the light emitting device 100 further includes a first light regulating layer 16. The first light adjusting layer 16 and the second metal layer 14 are disposed on the same layer and located at the position of the hollow portion 141. Illustratively, the first light regulating layer 16 includes a transparent layer and scattering particles distributed in the transparent layer. The transparent layer and the second metal layer 14 may be made of a transparent conductive material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), or may be made of a transparent insulating material such as resin. The scattering particles may be made of metal oxide or metal material such as titanium oxide, titanium dioxide, gold, or silver. By disposing the first light adjusting layer 16 at the position of the hollow portion 141, when the light emitted from the first epitaxial structure 12 passes through the first light adjusting layer 16, the path of the light can be adjusted, for example, the light is scattered, so that the light passing through the first light adjusting layer 16 is scattered. Therefore, the brightness of the light-emitting device 100 can be improved, the light-emitting device 100 has a larger light-emitting angle, the backlight dodging effect can be improved in the application of backlight display products, the light mixing distance can be shortened, and the product is convenient to thin and light. In addition, when the transparent layer is made of a transparent conductive material, the scattering particles can also have a conductive function.
In one embodiment, as shown in fig. 4, the first epitaxial structure 12 and the second epitaxial structure 13 respectively include a first semiconductor layer 121, a light emitting layer 122, and a second semiconductor layer 123 stacked along the light emitting direction, and the second semiconductor layer 123 of the second epitaxial structure 13 protrudes toward a direction away from the first metal layer 11 to form a second light adjusting layer (not labeled). For example, the second light adjusting layer formed on the first semiconductor layer 121 of the second epitaxial structure 13 may include a convex lens (not shown), such as a cylindrical convex lens or a spherical convex lens, so that the second light adjusting layer has a light condensing function. The orthographic projection area of the convex lens on the first metal layer 11 is smaller than the area of the first metal layer 11, and the orthographic projection of the blank part 141 on the first metal layer 11 is within the orthographic projection range of the convex lens on the first metal layer 11.
In the above scheme, the second semiconductor layer 123 of the second epitaxial structure 13 is multiplexed to form the second light adjusting layer, so that the light emitting directions can be converged, and the overall light emitting angle of the light emitting device 100 is reduced, and the light emitting brightness in a specific direction is higher. In addition, the second semiconductor layer 123 of the second epitaxial structure 13 is also used as the second light adjusting layer, which is beneficial to saving consumables and reducing the manufacturing cost.
In one embodiment, the light emitting device 100 further includes a second light adjusting layer (not shown), which is disposed on a side of the second epitaxial structure 13 away from the first metal layer 11. The second light adjusting layer may be made of a transparent insulating material such as resin. By providing the second light adjusting layer, the mixed light can be converged along the light emitting direction, so that the light emitting angle of the light emitting device 100 is reduced and the brightness thereof is increased.
In an embodiment, referring to fig. 2A, fig. 2B and fig. 4, an orthographic projection of the hollow portion 141 on the first metal layer 11 is overlapped with an orthographic projection of the second light adjusting layer on the first metal layer 11, and a refractive index of the hollow portion 141 is smaller than a refractive index of the second epitaxial structure 13. Exemplarily, an orthographic area of the hollow portion 141 on the first metal layer 11 is smaller than an orthographic area of the second light adjusting layer on the first metal layer 11, and an orthographic projection of the hollow portion 141 on the first metal layer 11 is located within an outer contour of an orthographic projection of the second light adjusting layer on the first metal layer 11. With such a structure, a part of light emitted from the first epitaxial structure 12 directly passes through the hollow portion 141, and another part of light which cannot directly pass through the hollow portion 141 is reflected by the first metal layer 11 and the second metal layer 12 in sequence and then passes through the hollow portion 141, so that the first epitaxial structure 12 can emit light in a small area. In addition, since the refractive index of the hollow portion 141 is smaller than the refractive index of the second epitaxial structure 13, light is refracted when entering the second epitaxial structure 13 from the hollow portion 141, so that the propagation direction of the light emitted from the hollow portion 141 and entering the second epitaxial structure 13 is closer to the normal than the propagation direction of the light in the hollow portion 141, and has a certain light-gathering effect. And the second light adjusting layer can further condense the mixed light, so that the light-emitting device has a better light condensing effect and a smaller light-emitting angle.
Alternatively, the second light adjusting layer may be a cylindrical convex lens or a spherical convex lens.
In one embodiment, as shown in fig. 3B and fig. 4, the first epitaxial structure 12 and the second epitaxial structure 13 respectively include a first current diffusion layer 124, a first semiconductor layer 121, a light emitting layer 122, a second semiconductor layer 123, and a second current diffusion layer 125 stacked along a light emitting direction, and the first current diffusion layer 124 and the second current diffusion layer 125 are made of transparent conductive materials such as Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO). The provision of the first current diffusion layer 124 and the second current diffusion layer 125 can increase uniformity of current diffusion and prevent light absorption to reduce brightness of the light emitting device 100.
In one embodiment, the first epitaxial structures 12 are multiple, the multiple first epitaxial structures 12 are stacked between the second epitaxial structure 13 and the first metal layer 11, and the second metal layer 14 is disposed between adjacent first epitaxial structures 12. Exemplarily, orthographic projections of the hollow-out portions 141 of the second metal layers 14 on the first metal layer 11 overlap. By providing a plurality of first epitaxial structures 12, light emitted from the plurality of first epitaxial structures 12 can be mixed with light emitted from the second epitaxial structure 13 and emitted after passing through the corresponding hollow portion 141, which is beneficial to improving the brightness of the light emitting device 100. It should be noted that the number of the first epitaxial structures 12 may be one, two or more, and the number thereof may be selected and adjusted according to actual needs.
It is understood that the above embodiments and the accompanying drawings only illustrate the core film layers of the light emitting device 100 of the present disclosure, and the light emitting device 100 may further include one or more of the following film layers: buffer layer, Bragg reflector layer, current blocking layer, first electrode and second electrode. The first electrode may be a first metal layer, or may be an electrode connected to the first metal layer, and the second electrode is an electrode connected to the transparent conductive layer 15 of the second epitaxial structure 13.
For example, referring to fig. 3B, the buffer layer 126 is located between the first metal layer 11 and the first semiconductor layer 121 of the first epitaxial structure 12, between the first current diffusion layer 124 and the first semiconductor layer 121 of the first epitaxial structure 12, between the first semiconductor layer 121 and the second metal layer 14 of the second epitaxial structure 13, or between the first current diffusion layer 124 and the second metal layer 14 of the second epitaxial structure 13. The microstructure on the buffer layer 126 is formed when the first epitaxial structure 12 and the second epitaxial structure 13 are grown, and will be described below.
The bragg mirror layer is located between the first metal layer 11 and the first semiconductor layer 121 of the first epitaxial structure 12; the Bragg reflector layer is a periodic film structure formed by alternately arranging high-refractive-index materials and low-refractive-index materials, and the gap position can be changed by adjusting the refractive indexes of the high-refractive-index materials and the low-refractive-index materials and the thickness of the periodic film, so that the Bragg reflector layer is adaptive to light rays in different wave band ranges.
The current blocking layer is located between the second semiconductor layer 123 of the first epitaxial structure 12 and the second current diffusion layer 125, and/or between the second semiconductor layer 123 of the second epitaxial structure 13 and the second current diffusion layer 125. The current blocking layer can prevent current crowding at the second metal layer 14 and the second electrode, and is beneficial to further improving the current diffusion performance.
Embodiments of the present disclosure also provide a display device including the light emitting device of any one of the above embodiments. Illustratively, the display device may be one of a backlight display device, a direct display device, and a liquid crystal display device. The display device includes, but is not limited to, products or components with display functions such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and a smart watch.
The embodiment of the present disclosure also provides a method for manufacturing the light emitting device 100. As shown in fig. 5, the method of manufacturing the light emitting device 100 includes:
step S51, forming a first wafer and a second wafer (not labeled); the first wafer comprises a first substrate 120A, a first epitaxial structure film 12A and a first metal film 14A which are stacked on one side of the first substrate 120A, the first metal film 14A comprises a plurality of hollow parts 141, and the second wafer comprises a second substrate 130A and a second epitaxial structure film 13A which is located on one side of the second substrate 130A;
step S52 of bonding a side of the second epitaxial structure film 13A facing away from the second substrate 130A and a side of the first metal film 14A facing away from the first substrate 120A, and peeling off the first substrate 120A;
step S53, forming a second metal film 11A on a side of the first epitaxial structure film 12A away from the first metal film 14A;
step S54 of patterning the second metal film 11A, the first epitaxial structure film 12A, the first metal film 14A, and the second epitaxial structure film 13A, respectively, to form a plurality of light emitting cells 100A such that the light emitting cells 100A have the hollow portions 141;
step S55, peeling the second substrate 130A, and disposing the transparent conductive layer 15 on the side of the light emitting unit 100A away from the patterned second metal film 11A, thereby forming the light emitting device 100. The second metal layer 14 is formed by the patterned first metal film 14A, the first metal layer 11 is formed by the patterned second metal film 11A, and the first epitaxial structure 12 and the second epitaxial structure 13 are formed by the patterned first epitaxial structure film 12A and the patterned second epitaxial structure film 13A, respectively.
Illustratively, as shown in fig. 5, forming the first wafer includes: step S511A of growing a first semiconductor film 121A, a light-emitting film 122A, and a second semiconductor film 123A in this order on one side of the first substrate 120A, the first semiconductor film 121A, the light-emitting film 122A, and the second semiconductor film 123A constituting a first epitaxial structure film 12A; step S512A is to form a first metal film 14A on a side of the first epitaxial structure film 12A facing away from the first substrate 120A. Forming the second wafer includes: step S511B of growing a first semiconductor film 121A, a light-emitting film 122A, and a second semiconductor film 123A in this order on one side of the growth substrate 50 to form a second epitaxial structure film 13A; in step S512B, the second substrate 130A is attached to the second semiconductor film 123A on the side away from the growth substrate 50, and then the growth substrate 50 is peeled off and removed.
Illustratively, the material of the first substrate 120A and the growth substrate 50 may be one of sapphire, silicon carbide, glass, quartz, and the like. When the material of the first substrate 120A and the growth substrate 50 is sapphire, forming the first epitaxial structure film 12A on the first substrate 120A or forming the second epitaxial structure film 13A only on the growth substrate 50 may generate a large dislocation density, resulting in a low internal quantum efficiency of the light emitting device 100. In this manner, a periodic microstructure, such as a Patterned Sapphire Substrate (PPS), may be disposed on the growth surface of the first Substrate 120A and/or the growth Substrate 50, so that the dislocation density may be reduced and the escape probability of photons on the light emitting film may be increased. Further, by providing a buffer layer (made of, for example, GaN or AlN) on the surfaces of the first substrate 120A and the growth substrate 50, a core center can be provided for film formation growth of the first epitaxial structure film 12A and/or the second epitaxial structure film 13A, and thus, the dislocation density can be reduced by promoting the change from three-dimensional island growth to two-dimensional lateral growth of the semiconductor material.
Step S52 includes: bonding the surface of the first metal film 14A facing away from the first substrate 120A and the surface of the first semiconductor film 121A of the second epitaxial structure film 13A facing away from the second substrate 130A by using one of bonding processes such as eutectic bonding and hybrid bonding, and peeling off and removing the first substrate 120A, so that the first semiconductor film 121A of the first epitaxial structure film 12A is exposed.
Step S53 includes: the second metal film 11A is formed on the first semiconductor film 121A of the first epitaxial structure film 12A on the side away from the first metal film 14A.
Step S54 includes: patterning the second metal film 11A, the first epitaxial structure film 12A, the first metal film 14A, and the second epitaxial structure film 13A in sequence to form a plurality of light emitting cells 100A arranged in an array, such that one light emitting cell 100A has a hollow portion 141; the patterned second metal film 11A, the patterned first epitaxial structure film 12A, the patterned first metal film 14A, and the patterned second epitaxial structure film 13A respectively form the first metal layer 11, the first epitaxial structure 12, the patterned second metal film 14A, and the patterned second epitaxial structure film 13A of the light emitting cell 100A.
Step S55 includes: the second substrate 130A is stripped and removed, and the transparent conductive layer 15 is formed on the side of the light emitting unit 100A away from the first metal layer 11.
Preferably, in steps S54 to S55, the second substrate 130A may be peeled off and removed after the plurality of light emitting cells 100A on the second substrate 130A are transferred onto the driving substrate, so that the transparent conductive layer 15 may be formed, the electrode bonding may be performed, or the conductive trace may be formed on the side of the second epitaxial structure 13 away from the first metal layer 11. The first semiconductor film 121A and the second semiconductor film 123A may be an electron transport film, a hole transport film, or an electron transport film, respectively. The light emitting film 122A is a multiple quantum well film. The material of the first semiconductor layer is the same as that of the first semiconductor layer, and the material of the second semiconductor film 123A is the same as that of the second semiconductor layer, which is not described herein again.
In another example, as shown in fig. 6, forming the first wafer includes: step S511A of growing a first semiconductor film 121A, a light-emitting film 122A, and a second semiconductor film 123A in this order on one side of the first substrate 120A, the first semiconductor film 121A, the light-emitting film 122A, and the second semiconductor film 123A constituting a first epitaxial structure film 12A; step S512A, sequentially forming a first current diffusion film 125A and a first metal film 14A on a side of the first epitaxial structure film 12A away from the first substrate 120A, wherein the first metal film 14A has a plurality of hollow portions 141; in step S513A, the first light adjusting film 16A is formed at the position of the hollow portion 141. Forming the second wafer includes: step S511B of growing a first semiconductor film 121A, a light emitting film 122A, a second semiconductor film 123A, and a first current diffusion film 125A in this order on one side of the growth substrate 50, the first semiconductor film 121A, the light emitting film 122A, and the second semiconductor film 123A constituting a second epitaxial structure film 13A; step S512B, after attaching the second substrate 130A to the side of the first current diffusion film 125A facing away from the growth substrate 50, peeling off the growth substrate 50 to expose the first semiconductor film 121A of the second epitaxial structure film 13A; in step S513B, a second current diffusion film 124A is formed on the side of the first semiconductor film 121A of the second epitaxial structure film 13A facing away from the second substrate 130A.
Step S52 includes: bonding the surface of the first wafer 10A facing away from the first substrate 120A and the surface of the second wafer 10B facing away from the second substrate 130A by using one of bonding processes such as eutectic bonding and hybrid bonding, and peeling off and removing the first substrate 120A, so that the first semiconductor film 121A of the first epitaxial structure film 12A is exposed.
Step S53 includes: a second current diffusion film 124A and a second metal film 11A are formed in this order on a side of the first epitaxial structure film 12A that is away from the first metal film 14A.
Step S54, patterning the second metal film 11A, the second current diffusion film 124A between the first epitaxial structure film 12A and the second metal film 11A, the first epitaxial structure film 12A, the first current diffusion film 125A between the first epitaxial structure film 12A and the first metal film 11A, the first metal film 14A, the second current diffusion film 124A between the first metal film 14A and the second epitaxial structure film 13A, and the first current diffusion film 125A between the second epitaxial structure film 13A and the second substrate 130A to form the first metal layer 11, the first current diffusion layer 124 of the first epitaxial structure 12, the second current diffusion layer 125 of the first epitaxial structure 12, the second metal layer 14, the first current diffusion layer 124 of the second epitaxial structure 13, and the second current diffusion layer 125 of the second epitaxial structure 13, and constitutes a light emitting unit 100A.
Step S55, the second substrate 130A is peeled off and removed, the second current diffusion layer 125 located on the side of the second epitaxial structure 13 away from the first metal layer 11 is exposed, and the transparent conductive layer 15 is formed, so as to obtain the light emitting device 100. Alternatively, the second current diffusion layer 125 may be used as the transparent conductive layer 15, and a new transparent conductive layer (not labeled in the figure) may be formed on the side of the second current diffusion layer 125 away from the first metal layer 11.
In one embodiment, forming the first wafer includes: the first light adjusting film 16A is formed at the positions of the plurality of hollow portions 141 of the first metal film 14A. Illustratively, as shown in fig. 6, forming the first wafer includes: in step S513A, a transparent material having scattering particles, for example, a transparent insulating material having scattering particles or a transparent conductive material having scattering particles, is coated on the plurality of hollow portions 141 of the first metal film 14A, so that the first light adjusting film 16A is formed. In this way, when the light emitting devices 100 are formed in step S55, the first light adjusting film 16A may form the first light adjusting layer 16 at the position of the hollow portion 141 of each light emitting device 100.
In one embodiment, as shown in fig. 7, forming the second wafer comprises:
step S511C to step S514C, forming the first semiconductor film 121A, the light emitting film 122A, the second semiconductor film 123A, and the mask pattern 72 in this order on one side of the growth substrate 50;
step S515C of transferring the mask pattern 72 onto the second semiconductor film 123A; the first semiconductor film 121A, the light emitting film 122A, and the second semiconductor 123A having the mask pattern may constitute the second epitaxial structure film 13A.
Step S516C to step S517C, the second substrate 130A is provided on the side of the second semiconductor film 123A away from the growth substrate 50, and the growth substrate 50 is peeled off.
Illustratively, as shown in fig. 7, forming the mask pattern includes: step S512C, coating a photoresist 70 on a side of the second semiconductor film 123A facing away from the growth substrate 50; step S513C, performing patterning processing on the photoresist 70 to form a photoresist pattern 71; step S514C, heating the photoresist pattern 71 by using a thermal reflow process, so that the photoresist pattern forms a plurality of lenticular mask patterns 72 arranged in parallel at intervals, wherein the lenticular mask patterns may have a shape of a cylindrical convex lens or a spherical convex lens.
Step S515C includes: the mask pattern 72 and the second semiconductor film 123A are sequentially etched by using a plasma etching process, so that the mask pattern is transferred to the second semiconductor film 123A, that is, the second semiconductor film 123A has a shape conformal to the mask pattern 72, specifically, when the mask pattern 72 and the second semiconductor film 123A are bombarded by using plasma, each part of the mask pattern 72 is gradually etched in an equal size until the mask pattern is completely removed, and finally, the second semiconductor film 123A has the same shape as the mask pattern 72, that is, a plurality of convex lens structures arranged in parallel at intervals are also formed in the second semiconductor film 123A, and the convex lenses can be cylindrical convex lenses or spherical convex lenses.
The steps S516C to S517C include: after the second substrate 130A is attached to the side of the second semiconductor film 123A facing away from the growth substrate 50, the growth substrate 50 is peeled off and removed. Alternatively, steps S516C to S517C include: after the first current diffusion film 125A is formed in this order on the side of the second semiconductor film 123A facing away from the growth substrate 50 and the second substrate 130A is attached, the growth substrate 50 is peeled off and removed.
Forming the second wafer may further include forming a second current diffusion film 124A on a side of the first semiconductor film 121A facing away from the second substrate 130A, step S518C.
Steps S52 to S55 in fig. 7 are similar to steps S52 to S55 in fig. 6, and refer to the embodiment of fig. 6, except that steps S53 to S55 in fig. 7 sequentially pattern the second metal film 11A, the first epitaxial structure film 12A, the first metal film 14A and the second epitaxial structure film 13A, so that each light emitting unit 100A has a hollow portion 141 and a second dimming line adjustment layer, wherein the second dimming layer is formed by patterning the second semiconductor film 123A in the second epitaxial structure 13, and the second dimming layer includes a convex lens, wherein an orthographic projection area of the convex lens on the first metal layer 11 is smaller than that of the first metal layer 11, and an orthographic projection of the hollow portion 141 on the first metal layer 11 is within an orthographic projection area of the convex lens on the first metal layer 11. In the formed light emitting device 100, the light emitted from the first epitaxial structure 12 is mixed with the light emitted from the second epitaxial structure 13 through the hollow portion 141, and the second light adjusting layer can condense the mixed light. Note that, here, the first current diffusion film 125A forms the second current diffusion layer 125 in the light emitting device after being subjected to the patterning process, and the second current diffusion film 124A forms the first current diffusion layer 124 in the light emitting device after being subjected to the patterning process. In addition, since the second light regulating layer has a shape conforming to the mask pattern 72, the second current diffusion layer 125 can also have a shape conforming to the mask pattern 72 after the patterning process is performed on the first current diffusion film 125A.
In one embodiment, the first epitaxial structure film 12A includes a plurality of first epitaxial structure films 12A stacked in the light exit direction, the plurality of first epitaxial structure films 12A includes a bottom layer epitaxial structure film located at a bottom layer in the light exit direction, and the second metal film 11A is formed on a side of the first epitaxial structure film 12A facing away from the first metal film 14A, and includes:
a second metal film 11A is formed on a side of the underlying epitaxial structure film facing away from the first metal film 14A.
For example, referring to fig. 5, in step S52, after bonding one first epitaxial structure film 12A and one second epitaxial structure film 13A, the remaining first epitaxial structure films 12A may be sequentially bonded along the direction away from the light-emitting direction in a bonding manner similar to that in step S52, so as to realize the stacked arrangement of the plurality of first epitaxial structure films 12A, and the first epitaxial structure film 12A located at the bottom layer in the light-emitting direction is used as the bottom layer epitaxial structure film; the second metal film 11A is formed on a side of the underlying epitaxial structure film that is away from the first metal film 14A.
In the description of the present specification, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present disclosure and to simplify the description, but are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present disclosure.
Furthermore, the terms "second", "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "second" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present disclosure, "a plurality" means two or more unless specifically limited otherwise.
In the present disclosure, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integral with; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.
In the present disclosure, unless otherwise expressly stated or limited, the second feature "on" or "under" the second feature may comprise the second and second feature being in direct contact, or may comprise the second and second feature being in contact, not directly, but via another feature therebetween. Also, a second feature "on," "above," and "above" a second feature includes the second feature being directly above and obliquely above the second feature, or simply indicating that the second feature is at a higher level than the second feature. A second feature being "under," "below," and "beneath" the second feature includes the second feature being directly above and obliquely above the second feature, or simply means that the second feature is at a lesser level than the second feature.
The above disclosure provides many different embodiments or examples for implementing different features of the disclosure. In order to simplify the disclosure of the present disclosure, specific example components and arrangements are described above. Of course, they are merely examples and are not intended to limit the present disclosure. Moreover, the present disclosure may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of various changes or substitutions within the technical scope of the present disclosure, which should be covered by the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (16)

1. A light emitting device, comprising:
a first metal layer;
the first epitaxial structure is positioned on one side of the first metal layer;
the second epitaxial structure is positioned on one side, away from the first metal layer, of the first epitaxial structure;
a second metal layer located between the first epitaxial structure and the second epitaxial structure, the second metal layer having a hollow portion;
and the transparent conducting layer is positioned on one side of the second epitaxial structure, which is deviated from the first metal layer.
2. The light emitting device of claim 1, wherein light emitted by the first epitaxial structure and the second epitaxial structure is within a same wavelength band.
3. The light-emitting device according to claim 1, wherein the second metal layer further comprises a bonding portion, and an orthographic projection of the hollowed-out portion on the first metal layer is within an orthographic projection range of the bonding portion on the first metal layer.
4. The light-emitting device according to claim 1, wherein the second metal layer further comprises two bonding portions, and orthographic projections of the two bonding portions on the first metal layer are respectively located on two opposite sides of an orthographic projection of the hollow portion on the first metal layer.
5. The light-emitting device according to claim 3 or 4, wherein an orthographic projection of the bonding portion on the first metal layer and an orthographic projection of the hollow portion on the first metal layer cover the first metal layer, and an area of the orthographic projection of the hollow portion on the first metal layer is greater than or equal to one half of an area of the first metal layer and smaller than the area of the first metal layer.
6. The light-emitting device according to claim 1, further comprising:
and the first light ray adjusting layer and the second metal layer are arranged on the same layer and are positioned at the position of the hollow part.
7. The light emitting device as claimed in claim 1, wherein the first epitaxial structure and the second epitaxial structure respectively include a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked along a light emitting direction, and the second semiconductor layer of the second epitaxial structure protrudes in a direction away from the first metal layer to form a second light adjusting layer.
8. The light-emitting device according to claim 1, further comprising:
and the second light ray adjusting layer is arranged on one side of the second epitaxial structure, which is deviated from the first metal layer.
9. The light-emitting device according to claim 7 or 8, wherein an orthographic projection of the hollow portion on the first metal layer overlaps with an orthographic projection of the second light adjusting layer on the first metal layer, and a refractive index of the hollow portion is smaller than a refractive index of the second epitaxial structure.
10. The light-emitting device according to claim 1, wherein the first epitaxial structure and the second epitaxial structure respectively comprise a first current diffusion layer, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second current diffusion layer stacked along a light-emitting direction, and the first current diffusion layer and the second current diffusion layer are made of transparent conductive materials.
11. The light-emitting device according to claim 1, wherein the first epitaxial structure is a plurality of first epitaxial structures, the plurality of first epitaxial structures are stacked and disposed between the second epitaxial structure and the first metal layer, and the second metal layer is disposed between adjacent first epitaxial structures.
12. A display device characterized by comprising the light-emitting device according to any one of claims 1 to 11.
13. A method of making a light emitting device, comprising:
respectively forming a first wafer and a second wafer; the first wafer is provided with a first substrate, a first epitaxial structure film and a first metal film, wherein the first epitaxial structure film and the first metal film are stacked on one side of the first substrate, the first metal film is provided with a plurality of hollow parts, and the second wafer is provided with a second substrate and a second epitaxial structure film located on one side of the second substrate;
bonding one side of the second epitaxial structure film, which faces away from the second substrate, with one side of the first metal film, which faces away from the first substrate, and peeling off the first substrate;
forming a second metal film on one side of the first epitaxial structure film, which is far away from the first metal film;
patterning the second metal film, the first epitaxial structure film, the first metal film and the second epitaxial structure film respectively to form a plurality of light emitting units so that the light emitting units have the hollow parts;
and stripping the second substrate, and arranging a transparent conductive layer on one side of the light-emitting unit, which is far away from the patterned second metal film, so as to form the light-emitting device.
14. The method of manufacturing according to claim 13, wherein forming a second wafer comprises:
and forming a first light adjusting film at the position of the hollow part.
15. The method of manufacturing according to claim 13, wherein forming a second wafer comprises:
forming a first semiconductor film, a light emitting film, a second semiconductor film, and a mask pattern in this order on one side of a growth substrate;
transferring the mask pattern onto the second semiconductor film;
and arranging the second substrate on the side of the second semiconductor film, which is far away from the growth substrate, and stripping the growth substrate.
16. A method according to claim 13, wherein the first epitaxial structure film includes a plurality of first epitaxial structure films stacked along a light-exiting direction, the plurality of first epitaxial structure films includes a bottom epitaxial structure film at a bottom layer in the light-exiting direction, and a second metal film is formed on a side of the first epitaxial structure film facing away from the first metal film, the method including:
and forming the second metal film on one side of the bottom layer epitaxial structure film, which is far away from the first metal film.
CN202210179662.4A 2022-02-25 2022-02-25 Light-emitting device, preparation method thereof and display device Pending CN114551669A (en)

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