CN114543695A - Hartmann measuring device and measuring method thereof and wafer geometric parameter measuring device - Google Patents
Hartmann measuring device and measuring method thereof and wafer geometric parameter measuring device Download PDFInfo
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- CN114543695A CN114543695A CN202210118747.1A CN202210118747A CN114543695A CN 114543695 A CN114543695 A CN 114543695A CN 202210118747 A CN202210118747 A CN 202210118747A CN 114543695 A CN114543695 A CN 114543695A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
Abstract
The application provides a Hartmann measuring device, a measuring method thereof and a wafer geometric parameter measuring device. The Hartmann measuring device comprises a light source collimation component and a Hartmann wavefront sensor. The light source collimation component is used for collimating the light beam generated by the light source to form a parallel light beam and directly or indirectly emitting the parallel light beam to the surface to be measured of the wafer; the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer, converting the detection light beam into a plurality of light spots and calculating the warping degree and the shape of the surface to be detected according to the plurality of light spots and the offset between the normal incidence light spots corresponding to the plurality of light spots. The technical scheme of the application can reduce the structural complexity and cost of the measuring device, and the surface to be measured of the wafer is not damaged in the measuring process.
Description
Technical Field
The application relates to the technical field of optics, in particular to a Hartmann measuring device, a measuring method thereof and a wafer geometric parameter measuring device.
Background
With the rapid development of the electronic age, the semiconductor industry becomes a research focus. Since wafers are the basic material for manufacturing semiconductor chips, the geometrical parameters of the wafers, such as the thickness, shape and flatness of the wafers, play a crucial role in the quality of the wafers.
The existing device for measuring the geometric parameters of the wafer generally adopts methods such as a mechanical probe method, a microscope method, a laser interference method and the like. However, the measuring device using the mechanical probe method is very likely to damage the surface of the wafer to be measured during the measurement process, and the device using the microscope method and the laser interference method has a complicated structure and a high cost. Therefore, how to arrange the measuring device with simple structure, low cost and no damage to the surface of the wafer to be measured is very important.
Disclosure of Invention
In view of this, embodiments of the present disclosure are directed to providing a hartmann measurement apparatus, a measurement method thereof, and a wafer geometry measurement apparatus, so as to reduce the structural complexity and cost of the measurement apparatus and ensure that the surface to be measured of the wafer is not damaged during the measurement process.
A first aspect of the present application provides a hartmann measurement apparatus. The Hartmann measuring device comprises a light source collimation component and a Hartmann wavefront sensor. The light source collimation component is used for collimating the light beam generated by the light source to form a parallel light beam and directly or indirectly emitting the parallel light beam to the surface to be measured of the wafer; the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer, converting the detection light beam into a plurality of light spots and calculating the warping degree and the shape of the surface to be detected according to the plurality of light spots and the offset between the normal incidence light spots corresponding to the plurality of light spots.
In an embodiment of the present application, the hartmann measurement apparatus further includes a beam splitter. The beam splitter is positioned between the light source collimation component and the wafer and used for guiding the parallel light beams to irradiate to the surface to be detected of the wafer, and the parallel light beams are reflected by the beam splitter and then irradiate to the surface to be detected of the wafer. The Hartmann wavefront sensor is also used for receiving the detection light beam reflected by the surface to be measured of the wafer and transmitted by the beam splitter.
In an embodiment of the present application, the hartmann measurement apparatus further comprises a mirror. The reflector is positioned between the light source collimation component and the wafer, and the parallel light beams are reflected by the reflector and then emitted to the surface to be measured of the wafer, so that the Hartmann wavefront sensor and the wafer are positioned on the same side of the light source collimation component and the reflector.
In an embodiment of the present application, the hartmann measurement apparatus further comprises a turning mirror. The turning mirror is positioned between the light source and the light source collimation component, and the light beam is reflected by the turning mirror and then is emitted to the light source collimation component.
In an embodiment of the present application, the hartmann measurement apparatus further includes a beam-shrinking collimation system. The beam-shrinking collimation system is arranged between the wafer and the Hartmann wavefront sensor and is used for irradiating the detection light beam to the Hartmann wavefront sensor after beam shrinking and collimation.
In an embodiment of the present application, the light source collimating component includes an off-axis parabolic mirror, a lens group, or a collimating lens.
In an embodiment of the application, the Hartmann wavefront sensor comprises a micro-aperture array, an imaging screen and a first camera, or the Hartmann wavefront sensor comprises a micro-lens array and a second camera.
A second aspect of the present application provides a hartmann measurement method. The Hartmann measurement method comprises the following steps: utilizing a light source collimation component to collimate light beams generated by a light source to form parallel light beams, and directly or indirectly emitting the parallel light beams to the surface to be measured of the wafer; the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer, the detection light beam is converted into a plurality of light spots, and the warping degree and the shape of the surface to be detected are obtained through calculation according to the plurality of light spots and the offset of the normal incidence light spots corresponding to the plurality of light spots.
A third aspect of the present application provides a wafer geometry parameter measuring device. The wafer geometric parameter measuring device comprises a chuck and any one of the Hartmann measuring devices provided by the first aspect of the application. The wafer is positioned between the chuck and the Hartmann measuring device.
A fourth aspect of the present application provides a wafer geometry parameter measuring device. The wafer geometric parameter measuring device comprises any one of the Hartmann measuring devices and a wafer geometric parameter measuring subsystem provided by the first aspect of the application. The wafer is positioned between the wafer geometric parameter measuring subsystem and the Hartmann measuring device.
In an embodiment of the application, the wafer geometry measurement subsystem comprises an interferometer system or any of the hartmann measurement devices provided in the first aspect of the application.
According to the technical scheme provided by the embodiment of the application, the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer and converting the detection light beam into the plurality of light spots, so that the warping degree and the shape of the surface to be detected can be obtained by calculating the offset of the plurality of light spots and the normal incidence light spots corresponding to the plurality of light spots. In addition, compared with an interferometer, the wafer measuring device can measure the warping degree and the shape of the surface to be measured only by receiving the detection light beam, so that coherent interference does not exist, an expensive reference mirror is avoided, and the warping degree and the shape of the wafer in a wider range can be measured. In addition, the technical scheme of the application can reduce the structural complexity and cost of the measuring device, and the surface to be measured of the wafer is not damaged in the measuring process.
Drawings
Fig. 1 is a schematic structural diagram of a hartmann measurement apparatus according to an embodiment of the present application.
Fig. 2A to fig. 2H are schematic structural diagrams of a hartmann measurement apparatus according to another embodiment of the present application.
Fig. 3 is a schematic diagram illustrating a method of a hartmann measurement method according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a device for measuring geometric parameters of a wafer according to a first embodiment of the present application.
Fig. 5A is a schematic structural diagram of a device for measuring geometric parameters of a wafer according to a second embodiment of the present application.
Fig. 5B is a schematic structural diagram of a device for measuring geometric parameters of a wafer according to a third embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a schematic structural diagram of a hartmann measurement apparatus according to an embodiment of the present application. As shown in fig. 1, the hartmann measurement apparatus 100 includes a light source collimating component 110 and a hartmann wavefront sensor 120. The light source collimating component 110 is used for collimating the light beam 10 generated by the light source 1 to form a parallel light beam 11, and directly or indirectly emitting the parallel light beam 11 to the surface to be measured of the wafer 2. The hartmann wavefront sensor 120 is configured to receive the detection light beam 12 reflected from the surface to be measured of the wafer 2, convert the detection light beam 12 into a plurality of light spots, and calculate the warping degree and the shape of the surface to be measured according to the plurality of light spots and offsets of normal incidence light spots corresponding to the plurality of light spots.
In some embodiments, since the surface to be measured of the wafer 2 is reflective to the parallel light beam, the parallel light beam 11 can be directly emitted to the surface to be measured of the wafer 2. In other embodiments, the parallel light beam 11 may also be indirectly emitted to the surface to be measured of the wafer 2, for example, a beam splitter or the like is disposed between the light source collimating component and the wafer, so that the beam splitter or the like is used to guide the parallel light beam 11 to be emitted to the surface to be measured of the wafer 2, which is not particularly limited in this application.
It should be understood that the light source 1 may be a part of the hartmann measurement apparatus, that is, the hartmann measurement apparatus includes the light source 1, or may be an external light source independent of the hartmann measurement apparatus, that is, the hartmann measurement apparatus does not include the light source 1, which is not particularly limited in this application. The light source 1 includes, but is not limited to, a laser light source, a broad spectrum white light source, or a light source using a light emitting diode as a light emitting body, as long as it can generate a light beam, and this is not particularly limited in the present application. The light source 1 may be a surface light source, but since the light beam generated by the surface light source is not concentrated enough and the area may be larger than the surface to be measured of the wafer, the loss of the light beam may be large, and therefore, optionally, the light source 1 may also be a point light source, since the light beam generated by the point light source is concentrated, the parallel light beam formed by the point light source after being collimated by the light source collimating component may all irradiate the surface to be measured of the wafer, and the utilization rate of the light beam generated by the light source is improved. The parallel light beam may cover the surface to be measured of the wafer completely or partially, which is not limited in this application.
The surface to be measured of the wafer 2 may be the first surface S of the wafer1Or the second surface S after the wafer is turned over2As long as the parallel light beam 11 can be received and reflected, this is not particularly limited in the present application. In some embodiments, the surface to be measured of the wafer may be a surface of the wafer close to the light source collimating component, so that the path of the parallel light beam to the surface to be measured of the wafer can be reduced, and the loss of part of the parallel light beam due to the too long path can be avoided. The material of the wafer 2 may be silicon, glass, silicon carbide, gallium nitride, gallium arsenide, or the like, which is not particularly limited in this application.
The Hartmann wavefront sensor 120 may be a Hartmann wavefront sensor including a micropore array, a Shack-Hartmann wavefront sensor including a microlens array, or other improved wavefront sensors based on Hartmann wavefront sensors, which is not limited in this application.
The normal incidence light spots corresponding to the plurality of light spots may be stored in a storage component of the hartmann measurement apparatus in advance, or may be obtained by standard wafer calibration when the hartmann measurement apparatus is used, which is not particularly limited in this application. The executing main body for calculating the warping degree and the shape of the surface to be measured according to the plurality of light points and the offset of the normal incidence light point corresponding to the plurality of light points may be a control system connected to the hartmann measurement apparatus, such as a computer, a controller, or the like, or may be a processor, a server, a controller, or the like in the hartmann measurement apparatus, which is not particularly limited in this application.
According to the technical scheme provided by the embodiment of the application, the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer and converting the detection light beam into the plurality of light spots, so that the warping degree and the shape of the surface to be detected can be obtained by calculating the offset of the plurality of light spots and the normal incidence light spots corresponding to the plurality of light spots. In addition, compared with an interferometer, the wafer measuring device can measure the warping degree and the shape of the surface to be measured only by receiving the detection light beam, so that coherent interference does not exist, an expensive reference mirror is avoided, and the warping degree and the shape of the wafer in a wider range can be measured. In addition, the hartmann wavefront sensor is generally used for laser beam quality diagnosis, atmospheric disturbance measurement and the like, and the hartmann wavefront sensor is not applied to the measurement of the warpage and the shape of the surface to be measured of the wafer at present for the reasons of high cost, large application field span and the like. In the embodiment of the application, the application of the Hartmann wavefront sensor to the measurement of the warpage and the shape of the surface to be measured of the wafer is considered for the first time, and a new device for measuring the warpage and the shape of the surface to be measured of the wafer is provided, so that the application scene of the Hartmann wavefront sensor is expanded.
In an embodiment of the present application, the light source collimating component 110 includes an off-axis parabolic mirror, a lens group, or a collimating lens.
It should be understood that the light source collimating component includes, but is not limited to, an off-axis parabolic mirror, a lens group, or a collimating lens, as long as the light beam generated by the light source can be collimated to form a parallel light beam.
In the embodiment of the application, the light source collimation component comprises the off-axis parabolic mirror, the lens group or the collimation lens, so that the light beam generated by the light source is collimated to form the parallel light beam, the parallel light beam is directly or indirectly emitted to the surface to be measured of the wafer, and the warping degree and the shape of the surface to be measured of the wafer are measured by the Hartmann wavefront sensor.
Fig. 2A to fig. 2H are schematic structural diagrams of a hartmann measurement apparatus according to another embodiment of the present application. The embodiments shown in fig. 2A-2H are examples of the embodiment shown in fig. 1. As shown in fig. 2A-2H, the difference from the embodiment shown in fig. 1 is that the light source collimating component 110 is an off-axis parabolic mirror. The off-axis parabolic mirror is utilized to collimate the light beam generated by the light source into a high-quality parallel light beam 11 without central blocking, and the off-axis parabolic mirror is a total reflection design, so that the phase delay and the absorption loss which are introduced by the traditional transmission optical element are effectively eliminated.
In an embodiment of the present application, the hartmann measurement apparatus further includes a beam splitter 210, located between the light source collimating component 110 and the wafer 2, for guiding the parallel light beam 11 to be emitted to the surface to be measured of the wafer 2, and the parallel light beam 11 is reflected by the beam splitter 210 and emitted to the surface to be measured of the wafer 2. The hartmann wavefront sensor is also configured to receive the detection beam 12 (refer to fig. 2A to 2F) reflected by the surface to be measured of the wafer 2 and transmitted through the beam splitter 210.
Specifically, as in the hartmann measurement apparatuses 200A to 200F, a first part of the parallel light beam 11 is directly transmitted through the beam splitter 210, a second part of the parallel light beam 11 is reflected to the surface to be measured of the wafer 2 through the beam splitter 210 and then reflected back to the beam splitter 210 through the surface to be measured of the wafer 2, a part of the second part of the parallel light beam 11 is reflected through the beam splitter 210, and the other part of the parallel light beam is transmitted through the beam splitter 210 to form the detection light beam 12.
It should be understood that the beam splitter 210 may be any optical device capable of reflecting the parallel light beam 11 to the surface to be measured of the wafer 2 and transmitting the parallel light beam 11 reflected by the surface to be measured of the wafer 2, and for example, the beam splitter may be a common beam splitter or a polarization beam splitter, which is not particularly limited in this application. The parallel light beam 11 may be directly emitted to the beam splitter 210 (refer to fig. 2A, 2B, 2E and 2F), or may be indirectly emitted to the beam splitter 210 (refer to fig. 2C and 2D), which is not particularly limited in this application.
In the embodiment of the application, the parallel light beams are guided to the surface to be detected of the wafer by utilizing the reflection effect of the beam splitter, and then the parallel light beams are reflected by the surface to be detected of the wafer and form the detection light beams by utilizing the transmission effect of the beam splitter, so that the warping degree and the shape of the surface to be detected of the wafer are measured by utilizing the detection light beams.
In an embodiment of the present application, the hartmann measurement apparatus further includes a reflecting mirror 220, which is located between the light source collimating component 110 and the wafer 2, and the parallel light beam 11 is reflected by the reflecting mirror 220 and then directed onto the surface to be measured of the wafer 2, so that the hartmann wavefront sensor 120 and the wafer 2 are both located on the same side of the light source collimating component 110 and the reflecting mirror 220.
In some embodiments, the mirror 220 may direct the parallel light beam 11 to be indirectly directed onto the surface to be measured of the wafer 2. Referring to fig. 2C and 2D, the mirror 220 guides the parallel light beam 11 to the beam splitter 210, a first part of the parallel light beam 11 is directly transmitted through the beam splitter 210, a second part of the parallel light beam 11 is reflected to the surface to be measured of the wafer 2 through the beam splitter 210, and is reflected back to the beam splitter 210 through the surface to be measured of the wafer 2, a part of the second part of the parallel light beam 11 is reflected through the beam splitter 210, and another part of the second part of the parallel light beam is transmitted through the beam splitter 210 to form the detection light beam 12.
In other embodiments, the mirror 220 may also direct the parallel light beam 11 to the surface to be measured of the wafer 2, for example, the beam splitter 210 in fig. 2C and 2D is replaced by the wafer 2, and the included angle between the wafer 2 and the mirror 220 is set to be a right angle, so that the parallel light beam 11 is directly emitted to the hartmann wavefront sensor 120 after being reflected by the mirror 220 and the surface to be measured of the wafer 2 in sequence.
In the embodiment of the application, the reflector is used for guiding the parallel light beams to irradiate the surface to be measured of the wafer, so that the Hartmann wavefront sensor and the wafer are both positioned at the same side of the light source collimation component and the reflector, the width of the Hartmann measuring device can be reduced, and the structure of the Hartmann measuring device is more compact. For example, by comparing the Hartmann measurement devices 200A, 200B, 200E, and 200F with the Hartmann measurement devices 200C and 200D, the widths (W) of the Hartmann measurement devices (200C and 200D) using mirrors can be clearly seencAnd Wd) Is significantly smaller than the width (W) of the Hartmann measurement devices (200A, 200B, 200E, and 200F) without the use of a mirrora、Wb、WeAnd Wf)。
In an embodiment of the present application, the hartmann measurement apparatus further includes a turning mirror 230, which is located between the light source 1 and the light source collimating part 110, and the light beam 10 is reflected by the turning mirror 230 and then directed to the light source collimating part 110 (refer to fig. 2E to fig. 2H).
It should be understood that the turning mirror 230 can be any optical device capable of turning the light beam 10, and the application is not limited thereto.
In the embodiment of the application, the light beam generated by the light source is refracted by the refracting mirror, so that the light beam is reflected to the light source collimation component via the refracting mirror, and the light beam is refracted, so that the height of the Hartmann measuring device can be reduced, the space utilization rate of the Hartmann measuring device is improved, and the structure of the Hartmann measuring device is more compact. For example, by comparing the hartmann measurement devices 200E to 200H with the hartmann measurement devices 200A to 200D, it is apparent that the height (H) of the hartmann measurement devices (200E to 200H) using the turning mirror can be clearly seene、Hf、HgAnd Hh) Is significantly smaller than the height (H) of the Hartmann measurement devices (200A to 200D) without the use of a turning mirrora、Hb、HcAnd Hd)。
In an embodiment of the present application, the hartmann measurement apparatus further includes a beam reduction and collimation system 240 disposed between the wafer 2 and the hartmann wavefront sensor 120, and configured to reduce and collimate the detection beam 12 and direct the beam to the hartmann wavefront sensor 120. (refer to FIGS. 2B, 2D, 2F and 2H)
For example, the beam-shrinking collimating system 240 may include a convex lens for focusing the detection beam and a concave lens for collimating the beam. It should be appreciated that beam-reducing and collimating system 240 may be any system that can reduce and collimate beams, and is not particularly limited in this application.
In the embodiment of the application, the beam-shrinking collimation system is additionally arranged between the wafer and the Hartmann wavefront sensor, so that the coverage area of the detection light beam is reduced after passing through the beam-shrinking collimation system, the detection light beam can be completely received by the Hartmann wavefront sensor, the loss of partial detection light beam caused by the large coverage area of the detection light beam is avoided, and the measurement accuracy and the measurement comprehensiveness are improved.
In an embodiment of the present application, the hartmann wavefront sensor 120 includes a micro-aperture array 121, an imaging screen 122, and a first camera 123 (refer to fig. 2A, 2C, 2E, and 2G), or the hartmann wavefront sensor 120 includes a micro-lens array 124 and a second camera 125 (refer to fig. 2B, 2D, 2F, and 2H).
It should be understood that the Hartmann wavefront sensor 120 including the array of micro-apertures, the imaging screen, and the first camera may be understood as a conventional Hartmann wavefront sensor, the Hartmann wavefront sensor 120 including the array of micro-lenses and the second camera may be understood as a Shack-Hartmann wavefront sensor, and the Hartmann wavefront sensor 120 may be a sensor based on conventional Hartmann wavefront sensors and Shack-Hartmann wavefront sensor modifications, which are not specifically limited in this application. Compared with the traditional Hartmann wavefront sensor, the Shack-Hartmann wavefront sensor can reduce the space of an imaging screen because the detection light beams are directly focused on the imaging surface of the second camera 125 without arranging the imaging screen, so that the structure of the Hartmann measuring device is more compact, and in addition, a plurality of light spots formed by the micro lens array are dispersed without the imaging screen, so that the light spots are clearer and have smaller errors, meanwhile, the aberration and chromatic aberration of the micro lens array can be eliminated by a calibration method, and the measuring accuracy is further effectively improved.
In the embodiment of the application, when the hartmann wavefront sensor comprises the micropore array, the imaging screen and the first camera, the micropore array can be used for converting the detection light beam and forming a plurality of light spots on the imaging screen, and the first camera is used for recording the plurality of light spots. When the hartmann wavefront sensor includes a microlens array and a second camera, the detection light beam can be converted into a plurality of light spots by the microlens array, and the plurality of light spots are directly converged onto an imaging surface of the second camera, so that the plurality of light spots are recorded by the second camera. In addition, a controller in the hartmann measurement device or a processor or a controller independent of the hartmann measurement device can be used for obtaining the curved surface slope of the wafer at the position corresponding to the multiple light points according to the multiple light points and the offset of the normal incidence light points corresponding to the multiple light points, further the warping degree of the wafer can be restored through algorithm calculation, and the appearance characteristic of the surface to be measured of the wafer can also be obtained through integrating the offset.
In an embodiment of the present application, the parallel light beam 11 is directly emitted to the surface to be measured of the wafer 2 (refer to fig. 2G and 2H).
In the embodiment of the application, the parallel light beams are directly emitted to the surface to be measured of the wafer, so that optical devices such as a reflecting mirror and/or a beam splitter between the light source collimation component and the wafer are saved, and the structure of the Hartmann measuring device can be further more compact.
Fig. 3 is a schematic diagram illustrating a method of hartmann measurement according to an embodiment of the present application. The main body of the hartmann measurement method may be the hartmann measurement apparatus in the above embodiments, or may be a controller or a processor connected to the hartmann measurement apparatus, and the present application is not limited thereto. As shown in fig. 3, the hartmann measurement method includes the following steps.
S310: the light source collimation component is used for collimating the light beam generated by the light source to form a parallel light beam, and the parallel light beam is directly or indirectly emitted to the surface to be measured of the wafer.
S320: the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer, the detection light beam is converted into a plurality of light spots, and the warping degree and the shape of the surface to be detected are obtained through calculation according to the plurality of light spots and the offset of the normal incidence light spots corresponding to the plurality of light spots.
For example, when the hartmann wavefront sensor includes the micropore array, the parallel light beam is incident to the surface to be measured of the wafer, the detection light beam reflected by the surface to be measured of the wafer changes due to the uneven topography of the wafer surface, the plurality of light spots formed after the detection light beam passes through the micropore array in the hartmann wavefront sensor are deflected relative to the micropore center, and the deflection degree is related to the slope of the corresponding position of the surface to be measured of the wafer, so that the deflection degree can be expressed by measuring the offsets of the plurality of light spots and the normal incidence light spots corresponding to the plurality of light spots, and the warping degree and the shape of the surface to be measured of the wafer can be obtained according to the offsets. When the Hartmann wavefront sensor comprises the micro-lens array, due to the uneven appearance of the surface of the wafer, a plurality of light spots formed after the detection light beam passes through the micro-lens array can be deflected relative to the center of the micro-lens, and the warping degree and the shape of the surface to be detected can be further calculated according to the plurality of light spots and the offset of the normal incidence light spots corresponding to the plurality of light spots.
It should be understood that the hartmann measurement method can also be adaptively adjusted according to the hartmann measurement apparatus as shown in any one of fig. 1 to 2H, and will not be described herein again.
According to the technical scheme provided by the embodiment of the application, the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer and converting the detection light beam into the plurality of light spots, so that the warping degree and the shape of the surface to be detected can be obtained by calculating the offset of the plurality of light spots and the normal incidence light spots corresponding to the plurality of light spots. In addition, a controller in the hartmann measurement device or a processor or a controller independent of the hartmann measurement device can be used for obtaining the curved surface slope of the wafer at the position corresponding to the multiple light points according to the multiple light points and the offset of the normal incidence light points corresponding to the multiple light points, the warping degree of the wafer can be restored through algorithm calculation, the whole morphological characteristics of the surface to be measured of the wafer can be obtained through integrating the offset, and the shape of the surface to be measured of the wafer can be obtained.
Fig. 4 is a schematic structural diagram of a device for measuring geometric parameters of a wafer according to a first embodiment of the present application. The wafer geometry measuring apparatus 400 includes a chuck 410 and a hartmann measuring apparatus 420. The hartmann measurement apparatus 420 is any one of the hartmann measurement apparatuses of fig. 1 to 2H. Wafer 2 is positioned between chuck 410 and hartmann measurement device 420.
It should be understood that the chuck 410 may be a chuck having only a wafer sucking function, a chuck having only a wafer floating function, a chuck having both a wafer sucking function and a wafer floating function, or other chucks such as a chuck having a static function or a chuck having only a supporting function, which is not particularly limited in this application. The structure of the hartmann measurement apparatus 420 is merely schematic, and the hartmann measurement apparatus 420 may be based on any one of the hartmann measurement apparatuses in fig. 1 to 2H, or may be based on any one of the hartmann measurement apparatuses in fig. 1 to 2H, which is obviously modified or equivalently replaced, and this application is not limited to this specifically.
According to the technical scheme provided by the embodiment of the application, the chuck is utilized to support the wafer, so that the wafer can be stably positioned between the chuck and the Hartmann measuring device, and the Hartmann measuring device can be utilized to measure geometrical parameters such as warping degree, shape, flatness and the like of the wafer. In addition, compared with an interferometer, the geometrical parameters of the wafer can be measured only by receiving the detection beam, so that coherent interference does not exist, an expensive reference mirror is avoided, and the wafer can be measured in a wider range of warping degrees and shapes with larger sizes.
Fig. 5A is a schematic structural diagram illustrating a device for measuring geometric parameters of a wafer according to a second embodiment of the present application. Fig. 5B is a schematic structural diagram of a device for measuring geometric parameters of a wafer according to a third embodiment of the present application. As shown in fig. 5A and 5B, the wafer geometry measuring apparatus includes a hartmann measuring apparatus 510 and a wafer geometry measuring subsystem 520. The hartmann measurement device 510 may be any one of the hartmann measurement devices of fig. 1 to 2H. Wafer 2 is positioned between wafer geometry measurement subsystem 520 and hartmann measurement device 510.
Specifically, the hartmann measurement device 510 can be configured to measure the shape and warpage of a first surface of the wafer 2 on a side close to the hartmann measurement device 510, the wafer geometry parameter measurement subsystem 520 can be configured to measure the shape and warpage of a second surface of the wafer 2 on a side close to the wafer geometry parameter measurement subsystem 520, and the flatness of the wafer can be obtained by combining the shape of the first surface, the shape of the second surface, and the thickness of the wafer.
It should be understood that the structure of the hartmann measurement device 510 in fig. 5A and 5B is merely schematic, and the hartmann measurement device 510 may be any hartmann measurement device in fig. 1 to 2H, or may be a hartmann measurement device obviously modified or equivalently replaced based on any hartmann measurement device in fig. 1 to 2H, and the present application is not limited thereto. The wafer 2 may be directly loaded in a vertical manner (parallel to the wafer 2 shown in fig. 5A and 5B) to the position shown in fig. 5A and 5B, or may be placed in a horizontal manner (perpendicular to the wafer 2 shown in fig. 5A and 5B) and then rotated 90 ° to be loaded to the position shown in fig. 5A and 5B, which is not particularly limited in this application.
In an embodiment of the present invention, the wafer geometry measurement subsystem 520 includes an interferometer system or a Hartmann measurement apparatus of any of FIGS. 1-2H.
It should be understood that the wafer geometric parameter measurement subsystem 520 may be any system capable of measuring a geometric parameter of a wafer, for example, an interferometer system, any hartmann measurement device in the above embodiments, or other systems for measuring a geometric parameter of a wafer, as long as the system can cooperate with the hartmann measurement device to measure the geometric parameter of the wafer, which is not limited in this application.
As shown in fig. 5A, the wafer geometry parameter measurement subsystem 520 is an interferometer system, and it should be understood that the interferometer system in fig. 5A is only an exemplary system based on a fizeau interferometer, and the interferometer system may also be a system based on a shearing interferometer or a michelson interferometer, and the components in the interferometer system may be replaced or adjusted according to actual requirements, which is not limited in this application.
As shown in fig. 5B, the wafer geometric parameter measurement subsystem 520 is a hartmann measurement device, and it should be understood that the hartmann measurement device in fig. 5B is only a schematic structure, and the hartmann measurement device may be any one of the hartmann measurement devices in fig. 1 to 2H, or may be a hartmann measurement device obviously modified or equivalently replaced based on any one of the hartmann measurement devices in fig. 1 to 2H, which is not specifically limited in this application. In addition, when the wafer geometric parameter measurement subsystem 520 is a hartmann measurement device, the structure of the hartmann measurement device may be the same as or different from that of the hartmann measurement device 510, which is not specifically limited in this application.
According to the technical scheme provided by the embodiment of the application, the wafer geometric parameter measuring device comprises the Hartmann measuring device and the wafer geometric parameter measuring subsystem, so that the shapes and the warping degrees of two opposite surfaces on the wafer can be measured simultaneously, the geometric parameters such as the flatness of the wafer can be measured, the efficiency of measuring the wafer geometric parameters is improved, and the application range of the Hartmann measuring device is further expanded.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modifications, equivalents and the like that are within the spirit and principle of the present application should be included in the scope of the present application.
Claims (10)
1. A hartmann measurement device, comprising: a light source collimating component and a Hartmann wavefront sensor, wherein,
the light source collimation component is used for collimating the light beam generated by the light source to form a parallel light beam and directly or indirectly emitting the parallel light beam to the surface to be measured of the wafer;
the Hartmann wavefront sensor is used for receiving the detection light beam reflected from the surface to be detected of the wafer, converting the detection light beam into a plurality of light spots, and calculating the warping degree and the shape of the surface to be detected according to the plurality of light spots and the offset between the normal incidence light spots corresponding to the plurality of light spots.
2. The hartmann measurement device of claim 1, further comprising:
and the beam splitter is positioned between the light source collimation component and the wafer and used for guiding the parallel light beams to irradiate the surface to be detected of the wafer, the parallel light beams are reflected by the beam splitter and then irradiate the surface to be detected of the wafer, and the Hartmann wavefront sensor is also used for receiving the detection light beams which are reflected by the surface to be detected of the wafer and transmitted by the beam splitter.
3. The hartmann measurement device of claim 1, further comprising:
and the reflector is positioned between the light source collimation component and the wafer, and the parallel light beams are reflected by the reflector and then emitted to the surface to be measured of the wafer, so that the Hartmann wavefront sensor and the wafer are positioned on the same side of the light source collimation component and the reflector.
4. The hartmann measurement device of claim 1, further comprising:
and the turning mirror is positioned between the light source and the light source collimation component, and the light beam is reflected to the light source collimation component after being reflected by the turning mirror.
5. The Hartmann measurement apparatus of any one of claims 1-4, further comprising:
and the beam-shrinking collimation system is arranged between the wafer and the Hartmann wavefront sensor and is used for irradiating the detection light beam to the Hartmann wavefront sensor after beam shrinking and collimation.
6. The Hartmann measurement apparatus of any one of claims 1-4, wherein the light source collimation component comprises an off-axis parabolic mirror, a lens group, or a collimating lens.
7. The Hartmann measurement apparatus of any one of claims 1-4, wherein the Hartmann wavefront sensor comprises a micro-aperture array, an imaging screen, and a first camera, or wherein the Hartmann wavefront sensor comprises a micro-lens array and a second camera.
8. A hartmann measurement method, characterized by comprising:
utilizing a light source collimation component to collimate light beams generated by a light source to form parallel light beams, and directly or indirectly emitting the parallel light beams to the surface to be measured of the wafer;
and receiving the detection light beam reflected from the surface to be detected of the wafer by using a Hartmann wavefront sensor, converting the detection light beam into a plurality of light spots, and calculating the warping degree and the shape of the surface to be detected according to the plurality of light spots and the offset of the normal incidence light spots corresponding to the plurality of light spots.
9. A wafer geometry measuring device, comprising:
a chuck;
the Hartmann measurement apparatus of any one of claims 1-7, wherein the wafer is positioned between the chuck and the Hartmann measurement apparatus.
10. A wafer geometry measuring device, comprising:
the hartmann measurement device of any one of claims 1-7;
and the wafer is positioned between the wafer geometric parameter measuring subsystem and the Hartmann measuring device.
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