CN114540795A - 薄膜沉积用汽化装置 - Google Patents

薄膜沉积用汽化装置 Download PDF

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Publication number
CN114540795A
CN114540795A CN202011324269.7A CN202011324269A CN114540795A CN 114540795 A CN114540795 A CN 114540795A CN 202011324269 A CN202011324269 A CN 202011324269A CN 114540795 A CN114540795 A CN 114540795A
Authority
CN
China
Prior art keywords
vaporizing
vaporization
heating
thin film
mixed gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011324269.7A
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English (en)
Chinese (zh)
Inventor
金基南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Baron Co ltd
Original Assignee
MI LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MI LLC filed Critical MI LLC
Publication of CN114540795A publication Critical patent/CN114540795A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D1/00—Evaporating
    • B01D1/14—Evaporating with heated gases or vapours or liquids in contact with the liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
    • B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
    • B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D1/00—Evaporating
    • B01D1/16—Evaporating by spraying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D1/00—Evaporating
    • B01D1/22—Evaporating by bringing a thin layer of the liquid into contact with a heated surface
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CN202011324269.7A 2020-11-11 2020-11-23 薄膜沉积用汽化装置 Pending CN114540795A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0150095 2020-11-11
KR1020200150095A KR20220064034A (ko) 2020-11-11 2020-11-11 박막 증착용 기화 장치

Publications (1)

Publication Number Publication Date
CN114540795A true CN114540795A (zh) 2022-05-27

Family

ID=81455227

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011324269.7A Pending CN114540795A (zh) 2020-11-11 2020-11-23 薄膜沉积用汽化装置

Country Status (3)

Country Link
US (1) US20220145457A1 (ko)
KR (2) KR20220064034A (ko)
CN (1) CN114540795A (ko)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010109924A (ko) * 2000-06-05 2001-12-12 김상호 액체소스 분사 기화장치
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system
CN1531753A (zh) * 2001-01-18 2004-09-22 ��ʽ����ɱ����� 汽化器、使用汽化器的各种装置以及汽化方法
KR20090078596A (ko) * 2008-01-15 2009-07-20 주성엔지니어링(주) 기화기 및 기화기를 가지는 증착장치
US20100248416A1 (en) * 2009-03-25 2010-09-30 Scott Wayne Priddy Deposition of high vapor pressure materials
KR101098359B1 (ko) * 2010-08-11 2011-12-23 주식회사 마이크로이즈 반도체 공정용 기화장치
CN108291292A (zh) * 2015-11-30 2018-07-17 株式会社爱发科 蒸汽释放装置及成膜装置
KR102125183B1 (ko) * 2019-10-07 2020-06-22 김기남 반도체 박막증착을 위한 기화기

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6409839B1 (en) * 1997-06-02 2002-06-25 Msp Corporation Method and apparatus for vapor generation and film deposition
WO2009049285A1 (en) * 2007-10-12 2009-04-16 University Of Delaware Thermal evaporation sources for wide-area deposition
KR20130119107A (ko) * 2012-04-23 2013-10-31 삼성에스디아이 주식회사 증착장치
KR20180027779A (ko) * 2016-09-07 2018-03-15 주성엔지니어링(주) 기화기
KR102336793B1 (ko) * 2017-05-11 2021-12-09 주성엔지니어링(주) 기화기

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system
KR20010109924A (ko) * 2000-06-05 2001-12-12 김상호 액체소스 분사 기화장치
CN1531753A (zh) * 2001-01-18 2004-09-22 ��ʽ����ɱ����� 汽化器、使用汽化器的各种装置以及汽化方法
KR20090078596A (ko) * 2008-01-15 2009-07-20 주성엔지니어링(주) 기화기 및 기화기를 가지는 증착장치
US20100248416A1 (en) * 2009-03-25 2010-09-30 Scott Wayne Priddy Deposition of high vapor pressure materials
KR101098359B1 (ko) * 2010-08-11 2011-12-23 주식회사 마이크로이즈 반도체 공정용 기화장치
CN108291292A (zh) * 2015-11-30 2018-07-17 株式会社爱发科 蒸汽释放装置及成膜装置
KR102125183B1 (ko) * 2019-10-07 2020-06-22 김기남 반도체 박막증착을 위한 기화기

Also Published As

Publication number Publication date
KR20220064034A (ko) 2022-05-18
KR102596950B1 (ko) 2023-11-01
US20220145457A1 (en) 2022-05-12
KR20220064352A (ko) 2022-05-18

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Effective date of registration: 20240130

Address after: Han Guozhongqingnandao

Applicant after: BARON Co.,Ltd.

Country or region after: Republic of Korea

Address before: Han Guozhongqingnandao

Applicant before: M. I LLC

Country or region before: Republic of Korea