CN114530754B - High-heat-dissipation perovskite nanosheet laser and preparation method thereof - Google Patents
High-heat-dissipation perovskite nanosheet laser and preparation method thereof Download PDFInfo
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 22
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention belongs to the technical field of laser design, and discloses a perovskite nanosheet laser with high heat dissipation, which comprises the following components: the solar cell module comprises a heat conduction base, wherein a silicon dioxide bonding layer is arranged on the heat conduction base, a perovskite nano sheet is arranged on the silicon dioxide bonding layer and used as a laser gain medium, a polyvinylidene fluoride packaging layer is arranged above the perovskite nano sheet, and the polyvinylidene fluoride packaging layer is used for packaging the perovskite nano sheet. According to the invention, the temperature of the device is greatly reduced through the heat conduction base; the polyvinylidene fluoride layer has high temperature resistance, effectively isolates the physical properties of water/oxygen, and can improve the stability of the device. And secondly, the polyvinylidene fluoride packaging layer and the silicon dioxide layer serve as double-sided waveguides, so that the highest light limiting capacity which can be achieved by the structure is ensured, power consumption and thermal effect are reduced, and the thermal stability of the device is further improved.
Description
Technical Field
The invention belongs to the technical field of laser design, and particularly relates to a high-heat-dissipation perovskite nanosheet laser, which improves the heat stability of a laser device by improving the heat dissipation effect of the device.
Background
In recent years, perovskite, as an emerging semiconductor material, exhibits higher optical gain, low defect state density, low auger loss, and other material properties than conventional semiconductor materials. Thus, perovskite-based micronano lasers exhibit lower lasing thresholds, non-radiative losses. The continuous wave injection perovskite micro-nano laser can realize long-term stable operation, and is a key step for the application of electrically pumped laser and high-density photoelectric integrated devices. The nano-sheet is used as a high-quality resonant cavity, has the characteristics of mass preparation and miniaturization, and is more beneficial to the development of the fields of photoelectric integration, biological detection and the like.
In 2015, the Michele Saba group, university of Italy Carriea, was proposed in perovskiteIn the laser, the radiation recombination rate and the loss rate have dependence on temperature. (Advanced Optical Materials, vol3, P1557, 2015). In 2019, the Noel c. Giebenk group at the university of pennsylvania studied the limiting factor of continuous operation in a distributed feedback optical cavity, work showed that: the threshold carrier concentration is substantially related to the third power of temperature. This causes the threshold to increase simultaneously with pump power density, pump source induced temperature during laser operation until pump injected carrier concentration never catches up with the threshold, and the laser extinguishes in order to maintain the threshold laser. Their work uses sapphire substratesκ=25W/(m·k). When the injection level is 35 kW cm -2 When the high-efficiency boundary convection heat exchange condition is introduced, the temperature of the device rises by 100 ℃. Importantly, the temperature of the incidence center of the laser spot at the perovskite upper interface is the highest, and the gradient of the interface temperature change is large. This photoinduction heat locally causes the accumulation of iodide ion defects, and the combined action of the photoinduction heat and water and oxygen at the high temperature of 100 ℃ causes the degradation of the material, so that the threshold value of the material is irreversibly raised until no laser light can be generated (Advanced Optical Materials, vol8, P1901514, 2019). And under the injection of high-power pump, auger recombination is enhanced, so that the reverse particle number loss is increased, and the power consumption and the thermal effect are further increased, thereby forming a malignant positive feedback effect.
The traditional way of improving stability is: the laser device is packaged, so that the water and oxygen corrosion can be prevented. For the widely used common packaging material, polymethyl methacrylate (PMMA), although the light transmittance is good and the mechanical strength is high, the high temperature resistance and the ultraviolet radiation resistance are not strong, and the PMMA is not hydrophobic. The thermal deformation temperature of PMMA is 350 f K f, which is very high for laser devices. And amorphous organic polymers generally have thermal conductivities an order of magnitude lower than perovskite materials (0.5W/(m.k)), such as PC materials. This material is thus exacerbated by thermal accumulation at the perovskite surface, resulting in the encapsulation material being destroyed by thermal effects to cause degradation of the perovskite material. Whereas the maximum theoretical thermal conductivity of crystalline organic materials is much higher than that of perovskite (Chemistry of Materials, vol 31, P4649-4656, 2019). And it has been demonstrated that crystalline organic thin films can be applied to perovskite laser device structures as structural materials (J Phys Chem Lett, vol 10, P3248-3253, 2019).
Importantly, directly incorporated high thermal conductivity substrates, such as Si #κ~130 W/(m·K)、n~3.43）、SiC（κ490W/(m.K), n-2.6), diamondκ1800W/(m.K), n-2.42), and the higher refractive index of the nano-sheet can cause larger light field leakage in the nano-sheet, so that resonance cannot be formed to generate laser. And because of the large roughness of these materials, the scattering loss and the contact thermal resistance between the two materials are increased, and the rise of the contact thermal resistance aggravates the thermal effect in the device.
At present, perovskite laser devices are heated up greatly under the condition of higher pumping power density, and the material is thermally degraded under the combined action of water, oxygen and surface defects of the material, so that the perovskite laser devices realize the greatest commercial challenges. Therefore, there is a need for improvements in the structural materials of lasers to increase the heat dissipation of perovskite nanoplatelet lasers and thus the thermal stability of the laser device.
Disclosure of Invention
The invention overcomes the defects existing in the prior art, and solves the technical problems that: a high heat dissipation perovskite nanoplatelet laser is provided to improve its thermal stability.
In order to solve the technical problems, the invention adopts the following technical scheme: a high thermal dissipation perovskite nanoplatelet laser comprising: the solar cell module comprises a heat conduction base, wherein a silicon dioxide bonding layer is arranged on the heat conduction base, a perovskite nano sheet is arranged on the silicon dioxide bonding layer and used as a laser gain medium, a polyvinylidene fluoride packaging layer is arranged above the perovskite nano sheet, and the polyvinylidene fluoride packaging layer is used for packaging the perovskite nano sheet.
The perovskite nano piece material is CH 3 NH 3 PbX 3 X is one of I, br and Cl.
The perovskite nano sheet has regular triangle or parallel hexagon shape, side length of 10-50 micrometers, thickness of 50-300 nanometers and surface roughness of less than 1 nm.
The thermal conductivity k of the thermally conductive base is greater than 100W/(m.K).
The heat conduction base is made of diamond or silicon carbide.
The roughness of the silicon dioxide bonding layer is less than 2 nm.
The thickness of the silicon dioxide bonding layer is 200-300 a nm a.
A preparation method of a perovskite nano sheet laser with high heat dissipation comprises the following steps:
s1, magnetically sputtering a layer of SiO on the surface of a diamond substrate 2 A layer;
s2, depositing MAPbI on the mica sheet by using a two-step vapor deposition method 3 A nanosheet;
s3, transferring the target nano sheet from the mica sheet to the diamond-SiO prepared in the step S1 by using a physical transfer method 2 On the substrate;
s4, finally, dissolving PVDF powder in N, N-Dimethylformamide (DMF) at 50 ℃ to prepare a 10% (w/v) fraction solution; in diamond-SiO 2 And (3) spin-coating the nano-sheet at a high speed with the rotating speed of more than or equal to 4500 rpm, and then annealing the film at 95 ℃ for 5min to prepare the perovskite nano-sheet laser.
In the step S4, the spin-coating duration is 30S.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a perovskite nano sheet laser with high heat dissipation, which has the advantages of heat conductivityκThe high heat conduction material with the temperature of more than 100W/(m.K) is used as a heat conduction substrate, the polyvinylidene fluoride (PVDF) material is used as a package, the refractive index of the PVDF material is similar to that of PMMA, the PVDF material has high permeability to gas and liquid, the PVDF material has the characteristics of hydrophobicity, ultraviolet radiation resistance, good heat stability, mechanical strength and the like, the PVDF has extremely wide transmission spectrum in visible light and near infrared, and the PVDF material is used as a crystalline organic material, has the heat conductivity higher than that of an amorphous organic material, can reduce the thermal gradient of the perovskite surface, greatly improves the heat dissipation capacity of devices, and is matched with low temperature through a PVDF package layerThe double-sided waveguide structure formed by the SiO2 bonding layer with the roughness ensures the highest light limiting capability of the structure, thereby reducing power consumption and thermal effect, maintaining higher microcavity optical limiting capability and simultaneously obtaining good interlayer thermal contact.
2. The invention is helpful for realizing the long-term stable operation of the micro-nano laser device. The structure preparation method is simple and convenient, can be used for mass preparation, and is helpful for promoting the development of commercial perovskite electric pumping lasers with high stability, nano analysis and integration on micro laser chips.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite nanoplatelet laser with high heat dissipation according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of FIG. 1;
in the figure: 1. lead halide perovskite nano-sheets, a 2.PVDF packaging layer, a 3.silicon dioxide layer and a 4.heat conducting substrate.
FIG. 3 is a graph of the light transmission spectrum of a spin-on, heat-treated annealed PVDF film on a glass sheet;
FIG. 4 shows the effective refractive index of mode light in perovskite materials with different SiO2 thicknesses when the substrate of the perovskite nanoplatelet laser with high heat dissipation provided by the embodiment of the invention is diamond or silicon carbide respectively;
FIG. 5 is a graph showing the light field confinement capability of a perovskite nanoplatelet laser with high thermal dissipation according to the thickness variation of SiO 2;
FIG. 6 is a graph showing the temperature change of a perovskite nanoplatelet laser with high heat dissipation at 405 nm and 1 kW/cm2 of continuous laser injection according to an embodiment of the present invention;
FIG. 7 is a graph of temperature change at 405 nm, 1 kW/cm2 of a continuous laser implant with a standard device with a substrate replaced with SiO 2;
fig. 8 is a temperature change curve of the device without the PVDF encapsulation layer, and fig. 8 and 7 are control groups of fig. 6.
Wherein, 1 is perovskite nanosheet, 2 is polyvinylidene fluoride encapsulation layer, 3 is silicon dioxide bonding layer, and 4 is heat conduction base.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The perovskite nanosheet laser provided by the invention combines a heat dissipation design, and ensures excellent packaging characteristics and higher light field limiting capability. The problem of thermal instability faced by perovskite material laser devices can be solved.
Specifically, as shown in fig. 1-2, a high heat dissipation perovskite nanoplatelet laser according to an embodiment of the present invention includes: the perovskite type solar cell module comprises a heat conduction base 4, wherein a silicon dioxide bonding layer 3 is arranged on the heat conduction base 4, a perovskite nano sheet 1 serving as a laser gain medium is arranged on the silicon dioxide bonding layer 3, a polyvinylidene fluoride (PVDF) packaging layer 2 is arranged above the perovskite nano sheet 1, the polyvinylidene fluoride packaging layer 2 covers the upper side and the outer side of the perovskite nano sheet 1, and the perovskite nano sheet 1 is packaged.
Specifically, in this embodiment, the perovskite nanosheet 1 is made of CH 3 NH 3 PbX 3 X is one of I, br and Cl. Further, in this embodiment, the perovskite nanosheets have a regular triangle or a parallel hexagon, a side length of 10-50 micrometers, a thickness of 50-300 nanometers, and a surface roughness of less than 1 nm.
Specifically, the thermal conductivity κ of the high thermal conductivity base 4 in the present embodiment is larger than 100W/(m.k). Specifically, the material of the high heat conduction base 4 is diamond or silicon carbide.
Specifically, in this embodiment, the roughness of the silicon dioxide bonding layer 3 is less than 2 nm; the thickness of the silicon dioxide bonding layer 3 is 200-300 a nm a.
The light transmission spectrum of the PVDF film after spin-on heat treatment annealing on a glass sheet is shown in fig. 3. Polyvinylidene fluoride (PVDF) has refractive index similar to PMMA, high permeation resistance to gas and liquid, hydrophobicity, ultraviolet radiation resistance, good thermal stability, mechanical strength and the like, and PVDF has extremely wide transmission spectrum in visible light and near infrared.
Theoretical calculations are as follows:
the light field limiting capability of the target device is calculated by utilizing finite element theory:
only the fundamental and first order modes in the metal halide perovskite triangular nanoplatelets are of interest here, as these two modes are most excitable; the PVDF layer thickness was set at 1 micron with the remaining parameters: siO (SiO) 2 Layer surface roughness RMS<2 nm nanoplatelet surface roughness RMS<1 nm, the nano-sheet side length is 40 μm, the thickness is 150 nm, and the radius of the substrate is 3 mm. Wherein the diamond has little influence on optical and thermal theoretical calculation after a certain thickness, and the consideration of calculation is set to be in the sub-millimeter level for convenience. And the portion of the substrate larger than the nanoplatelets in the horizontal dimension has no effect on the light confinement ability of the nanoplatelets, the substrate is thus set to the same horizontal dimension as the nanoplatelets. The physical parameters of the materials are all from a material library of the com software.
The calculation results are shown in fig. 4-5: FIG. 4 shows the effective refractive index of mode light in perovskite material with SiO when the substrate is diamond, silicon carbide 2 Trend of thickness variation. FIG. 5 shows the reaction of SiO 2 The thickness of the layer is increased, the light confinement capability of the fundamental mode (square) and the first-order mode (round) is obviously improved, and the layer finally goes to be smooth, so that the maximum light confinement capability of the device is gradually reached. When SiO 2 When the layer thickness is 200 nanometers, the light limiting capacity of the base mode is close to the maximum and reaches to 0.64. This is consistent with the trend of change in effective refractive index of mode light in the perovskite material of fig. 4. Whether diamond or silicon carbide substrate, exhibits SiO 2 The thickness of the layer is 200 to 200nmThe effect of thickness on waveguide performance is small (e.g., the improvement in light confinement after 200, nm in fig. 5 is only below 7% of the range of variation from 40-200 nm. And the improvement of the light limiting capability of the device is almost 0 after the thickness is more than 300 and nm, but thicker SiO 2 The layers reduce the device heat dissipation capability. Thus here SiO is chosen 2 Suitably, the thickness of (a) is in the range of 200-300 a nm a.
And (II) calculating the heat dissipation capacity of the device by utilizing the finite element theory:
next, 200nm thick SiO was used 2 Layer, 1 kW/cm at wavelength 405 nm was examined 2 Device temperature rise profile under continuous laser injection. The remaining parameters are: siO (SiO) 2 Layer surface roughness RMS<2 nm nanoplatelet surface roughness RMS<1 nm, the nano-sheet side length is 40 μm, the thickness is 150 nm, and the radius of the substrate is 3 mm. When the substrate is SiO 2 The temperature rise curve of the device is shown in fig. 6. When the substrate is diamond, the temperature rise curve of the device is shown in fig. 7, and the steady-state temperature rise amplitude of the device with diamond as the substrate is reduced by approximately 11 times. Fig. 8 is a graph of the control of fig. 7 showing the temperature rise profile of the device with the PVDF package removed, showing that the effect of the package layer on steady state temperature is minimal (within 1 c) in a diamond based device, with only a slight change in temperature rise trend over the initial 1 microsecond time scale.
Therefore, the laser structure provided by the embodiment of the invention can obtain excellent light limiting capacity and heat dissipation effect of the light field of the laser mode of the nano sheet, thereby reducing the laser threshold and non-radiation loss and finally enhancing the stability of the whole device.
Example two
The second embodiment of the invention provides a preparation method of a perovskite nanosheet laser, which specifically comprises the following preparation implementation steps:
s1, magnetically sputtering a layer of SiO on the surface of a diamond substrate 2 Layers, in particular SiO 2 The thickness of the layer was 200nm, the surface roughness RMS after plating<2 nm。
S2, depositing MAPbI on the mica sheet by using a two-step vapor deposition method 3 A nano-sheet. Wherein, the surface roughness RMS of the nano sheet<1 nm。
S3, transferring the target nano sheet from the mica sheet to the diamond-SiO prepared in the step S1 by using a physical transfer method 2 On the substrate, the nano-sheet has a side length of 40 μm and a thickness of 150 nm.
S4, finally, dissolving PVDF powder in N, N-Dimethylformamide (DMF) at 50 ℃ to prepare a 10% (w/v) fraction solution. In diamond-SiO 2 The nano-sheet is spin-coated at a high speed with the rotating speed of more than or equal to 4500 rpm for 30 s, and then the film is annealed at 95 ℃ for 5min to prepare a standard device, namely the perovskite nano-sheet laser.
In summary, the invention provides a perovskite nanoplatelet laser with high heat dissipation, which greatly reduces the temperature of a device through a heat conduction base; the polyvinylidene fluoride layer has high temperature resistance, effectively isolates the physical properties of water/oxygen, and can improve the stability of the device. And secondly, the polyvinylidene fluoride packaging layer and the silicon dioxide layer serve as double-sided waveguides, so that the highest light limiting capacity which can be achieved by the structure is ensured, power consumption and thermal effect are reduced, and the thermal stability of the device is further improved.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (9)
1. A high thermal dissipation perovskite nanoplatelet laser, comprising: the perovskite type solar cell module comprises a heat conduction base (4), wherein a silicon dioxide bonding layer (3) is arranged on the heat conduction base (4), a perovskite nano sheet (1) serving as a laser gain medium is arranged on the silicon dioxide bonding layer (3), a polyvinylidene fluoride packaging layer (2) is arranged above the perovskite nano sheet (1), and the polyvinylidene fluoride packaging layer (2) is used for packaging the perovskite nano sheet (1).
2. The high heat dissipation perovskite nanoplatelet laser of claim 1, wherein the perovskite nanoplatelet (1) material is CH 3 NH 3 PbX 3 X is one of I, br and Cl.
3. The high heat dissipation perovskite nanoplatelet laser according to claim 1 or 2, wherein the perovskite nanoplatelets (1) have a regular triangle or parallel hexagon morphology, a lateral length of 10-50 microns, a thickness of 50-300 nanometers, and a surface roughness of less than 1 nm.
4. A high thermal dissipation perovskite nanoplatelet laser according to claim 1, characterized in that the thermal conductivity k of the thermally conductive base (4) is greater than 100W/(m.k).
5. The high heat dissipation perovskite nanoplatelet laser as claimed in claim 4, wherein the thermally conductive base (4) is made of diamond or silicon carbide.
6. A high heat dissipation perovskite nanoplatelet laser according to claim 1, characterized in that the roughness of the silicon dioxide bonding layer (3) is less than 2 nm.
7. A high heat dissipation perovskite nanoplatelet laser according to claim 1, characterized in that the thickness of the silicon dioxide bonding layer (3) is 200-300 a nm a.
8. The method for preparing the high-heat-dissipation perovskite nano-sheet laser according to claim 1, which is characterized by comprising the following steps:
s1, magnetically sputtering a layer of SiO on the surface of a diamond substrate 2 A layer;
s2, utilizing two-step vapor depositionDeposition of MAPbI on mica sheets 3 A nanosheet;
s3, transferring the target nano sheet from the mica sheet to the diamond-SiO prepared in the step S1 by using a physical transfer method 2 On the substrate;
s4, finally, dissolving PVDF powder in N, N-Dimethylformamide (DMF) at 50 ℃ to prepare a 10% (w/v) fraction solution; in diamond-SiO 2 And (3) spin-coating the nano-sheet at a high speed with the rotating speed of more than or equal to 4500 rpm, and then annealing the film at 95 ℃ for 5min to prepare the perovskite nano-sheet laser.
9. The method for preparing a high heat dissipation perovskite nanoplatelet laser according to claim 8, wherein in the step S4, the spin-coating duration is 30S.
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