CN114505466A - Electronic packaging material and preparation method and preparation device thereof - Google Patents

Electronic packaging material and preparation method and preparation device thereof Download PDF

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Publication number
CN114505466A
CN114505466A CN202210065263.5A CN202210065263A CN114505466A CN 114505466 A CN114505466 A CN 114505466A CN 202210065263 A CN202210065263 A CN 202210065263A CN 114505466 A CN114505466 A CN 114505466A
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silicon
aluminum
layer
electronic packaging
packaging material
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CN114505466B (en
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刘源
周灿旭
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Tsinghua University
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Tsinghua University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D23/00—Casting processes not provided for in groups B22D1/00 - B22D21/00
    • B22D23/04—Casting by dipping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D18/00—Pressure casting; Vacuum casting
    • B22D18/02—Pressure casting making use of mechanical pressure devices, e.g. cast-forging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Abstract

The invention relates to an electronic packaging material, a preparation method and a preparation device thereof. The preparation method comprises the following steps: silicon powder and an aluminum-containing material are proportioned, wherein the aluminum-containing material comprises a pure aluminum material and/or at least one aluminum-silicon alloy material; placing salt in an open mold with vent holes at the bottom and compacting to form a salt vent layer; putting the silicon powder into an open die, and placing the silicon powder above a salt exhaust layer to be compacted to form a silicon layer; and heating and melting the aluminum-containing material to form an aluminum-containing liquid, pouring the aluminum-containing liquid into the open mold with the silicon layer formed, and pressing.

Description

Electronic packaging material and preparation method and preparation device thereof
Technical Field
The invention relates to the technical field of electronic packaging materials, in particular to an electronic packaging material and a preparation method and a preparation device thereof.
Background
With the rapid development of the aerospace field in China and the development of meeting the requirements of high stability and light weight of relevant equipment such as satellite interconnection, radar communication and the like, an electronic system is required to be smaller in volume, higher in power and higher in integration degree, so that the high-silicon aluminum alloy becomes the first choice of electronic packaging materials.
The traditional high-silicon aluminum material is usually produced by adopting a spray forming or pouring method, but the spray forming method has higher cost and lower production efficiency, and the high-silicon aluminum material prepared by the pouring method has large crystal grains and can not meet the performance requirements of thermal conductivity and machining. With the development of integration, miniaturization and high power of electronic devices, the requirements on the thermal conductivity and the thermal expansion coefficient of electronic packaging materials are higher. Currently, silicon carbide has higher thermal conductivity and lower coefficient of thermal expansion than silicon, and thus, a silicon carbide composite approach is considered to replace the high silicon aluminum material. But is difficult to be widely used due to poor weldability and difficult workability of the silicon carbide/aluminum material.
Disclosure of Invention
Based on this, there is a need for a new method and apparatus for preparing electronic packaging material, which can prepare electronic packaging material with higher thermal conductivity and lower thermal expansion coefficient.
In one aspect of the present invention, a method for preparing an electronic packaging material is provided, which comprises the following steps:
silicon powder and an aluminum-containing material are proportioned, wherein the aluminum-containing material comprises a pure aluminum material and/or at least one aluminum-silicon alloy material;
placing salt in an open mold with a vent hole at the bottom and compacting to form a salt vent layer;
putting the silicon powder into an open die, placing the silicon powder above a salt exhaust layer, and compacting to form a silicon layer;
and heating and melting the aluminum-containing material to form an aluminum-containing liquid, pouring the aluminum-containing liquid into the open die with the silicon layer formed, and pressing.
In one embodiment, the particle size of the salt is 10-40 meshes, the particle size of the silicon powder is 300-800 meshes, and the hole diameter of the exhaust hole is 0.3-1 mm.
In one embodiment, the compaction step is performed at a pressure of 1MPa to 2 MPa.
In one embodiment, the thickness of the salt exhaust layer is 1cm to 3cm, and the thickness of the silicon layer is 10cm to 100 cm.
In one embodiment, the pressure of the pressing is 8MPa to 15MPa, and the dwell time of the pressing is 20 minutes to 60 minutes.
In one embodiment, the aluminum-containing material is a pure aluminum material, and the mass ratio of the silicon powder to the pure aluminum material is greater than or equal to 1.5.
In one embodiment, the content of silicon element in the aluminum-silicon alloy material is 22-25% by mass.
In one embodiment, the preparation method of the electronic packaging material further comprises the step of forming a silicon carbide layer between the salt gas discharge layer and the silicon layer, specifically, applying silicon carbide powder on the salt gas discharge layer to compact the silicon carbide layer, and applying silicon powder on the silicon carbide layer to form the silicon layer.
In one embodiment, the particle size of the silicon carbide powder is 300-800 meshes.
In one embodiment, the method for preparing the electronic packaging material further includes a step of heating the silicon carbide powder and/or the silicon powder, so that the temperature of the silicon carbide powder and/or the silicon powder added into the mold is higher than that of the aluminum-containing liquid.
In one embodiment, the method for preparing the electronic packaging material further comprises the step of heating the salt.
In another aspect of the invention, the electronic packaging material prepared by the preparation method of the electronic packaging material is provided.
In one embodiment, the electronic packaging material comprises a layer of silicon aluminum material and a layer of foamed aluminum material.
In one embodiment, the electronic package material further comprises an aluminum silicon carbide layer between the silicon aluminum material layer and the foamed aluminum material layer.
In one embodiment, the silicon-aluminum material layer has a gradient silicon content.
16. The electronic packaging material of claim 13 or 14, wherein the foamed aluminum material layer has a porosity of 60% to 80% and a pore size of 0.1mm to 5 mm.
The invention further provides a device for preparing the electronic packaging material by using the preparation method of the electronic packaging material, which comprises a bottom plate, an outer shell and a pressure head, wherein the bottom plate is fixedly arranged at one end of the outer shell, the pressure head is movably connected at the other end of the outer shell, the bottom plate, the outer shell and the pressure head form a closed cavity, and a plurality of exhaust holes are formed in the bottom plate.
Compared with the prior art, the invention has at least the following beneficial effects:
1. the preparation method of the electronic packaging material provided by the invention can be used for simultaneously preparing the high-quality lightweight silicon-aluminum material and the foamed aluminum material, the silicon-aluminum material is used as a main product, the foamed aluminum material is used as a byproduct, and compared with the traditional silicon-aluminum material preparation method and the traditional foamed aluminum material preparation method, the preparation method of the electronic packaging material provided by the invention has the advantages of simpler process and lower cost.
2. The preparation method of the electronic packaging material provided by the invention can also realize the preparation of the gradient silicon-aluminum material, and the silicon mass content in the prepared silicon-aluminum material can be distributed in a gradient manner. The density was 2.4g/cm3About, the thermal expansion coefficient can reach 11 multiplied by 10-6/℃-1The thermal conductivity is 120W/mK or more, and the tensile strength is 96MPa or more.
3. The preparation method of the electronic packaging material provided by the invention can further prepare the aluminum silicon carbide AlSiC multi-phase composite material, greatly improves the thermal conductivity and the thermal expansion coefficient of the material, and has simple process and low cost. The prepared aluminum silicon carbide powder has the thermal conductivity of over 160W/m.K and the thermal expansion coefficient of 9 x 10-6A density of 2.8g/cm at 50 ℃ or lower3The bending strength is about 400MPa or more.
4. Furthermore, the preparation method of the electronic packaging material provided by the invention can further realize the compounding of the aluminum silicon carbide AlSiC multi-phase composite material and the silicon aluminum material, and the performance of the composite material is far superior to that of the existing silicon aluminum composite material for electronic packaging. But also can simultaneously obtain byproduct foamed aluminum material, thereby greatly reducing the preparation cost of the material.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of a method for preparing an electronic packaging material according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the present invention for preparing a gradient Si-Al material;
FIG. 3 is a schematic view of the structure of an apparatus for preparing electronic packaging material and the layers of material formed before pressing according to an embodiment;
FIG. 4 is a macro topography of the composite prepared in example 3;
FIG. 5 is an enlarged macro topography of the aluminum foam layer of the composite prepared in example 3;
FIG. 6 is an enlarged macro topography of the aluminum silicon carbide layer and the silicon aluminum layer of the composite prepared in example 3;
FIG. 7 is a metallographic representation of the structure of the layers shown in FIG. 6;
figure 8 is a comparison of the macro topography of the foamed aluminum layer material in the materials prepared in examples 3 and 4.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Other than as shown in the operating examples, or where otherwise indicated, all numbers expressing quantities of ingredients, physical and chemical properties, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". For example, unless indicated to the contrary, the numerical parameters set forth in the foregoing specification and attached claims are approximations that can be suitably varied by those skilled in the art in seeking to obtain the desired properties utilizing the teachings disclosed herein. The use of numerical ranges by endpoints includes all numbers within that range and any range within that range, for example, 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4, and 5, and the like.
Referring to fig. 1, an embodiment of the invention provides a method for preparing an electronic packaging material, including the following steps:
s10, mixing silicon powder and an aluminum-containing material in proportion, wherein the aluminum-containing material comprises a pure aluminum material and/or at least one aluminum-silicon alloy material;
s30, placing salt in an open mold with vent holes at the bottom and compacting to form a salt vent layer;
s50, placing the silicon powder into an open mold, placing the mold above a salt exhaust layer, and compacting to form a silicon layer;
s70, heating and melting the aluminum-containing material to form an aluminum-containing liquid, pouring the aluminum-containing liquid into the open mold with the silicon layer formed, and pressing.
The at least one aluminum-silicon alloy material means one or more aluminum-silicon alloy materials. The aluminum-silicon content of different aluminum-silicon alloy materials is different. The preparation method of the electronic packaging material provided by the invention comprises the steps of forming a high-pressure seepage channel by utilizing a silicon layer formed by silicon powder and a salt exhaust layer formed by salt, heating and melting an aluminum-containing material to prepare an aluminum-containing liquid, allowing the aluminum-containing liquid to enter the high-pressure seepage channel through pressing, gradually cooling the aluminum-containing liquid in the high-pressure seepage channel to enter the silicon layer to form the silicon-aluminum material with any silicon content, and allowing the silicon-aluminum material to enter the salt exhaust layer to form the porous foamed aluminum material. The compactness of the silicon layer and the salt exhaust layer can be further increased through the pressing action, particularly, the silicon layer is formed, the compactness of the formed silicon-aluminum material is better, crystal grains of each phase component are finer and are more uniformly distributed, and therefore, the obtained silicon-aluminum material has better thermal conductivity and thermal expansion coefficient. Further, as the density of the silicon layer is increased and the pores are reduced, when the aluminum-containing material comprises at least one aluminum-silicon alloy material, crystal grains precipitated in the cooling process of the silicon component in the aluminum-containing liquid are blocked by the silicon layer to play a similar filtering effect, so that the silicon component is enriched above the silicon layer, and meanwhile, the permeation of the aluminum-containing liquid is slowed down to form a gradient silicon-aluminum material, and the schematic diagram of the principle is shown in fig. 2.
In some embodiments, the particle size of the salt is any value between 10 mesh and 100 mesh. Understandably, the particle size of the salt may be 10 mesh, 20 mesh, 30 mesh, 40 mesh, 50 mesh, 60 mesh, 70 mesh, 80 mesh, 90 mesh, 100 mesh.
In some embodiments, the silicon powder has a particle size of any value between 300 mesh and 800 mesh. Understandably, the particle size of the silicon powder can be 300 meshes, 350 meshes, 400 meshes, 450 meshes, 500 meshes, 550 meshes, 600 meshes, 650 meshes, 700 meshes, 750 meshes and 800 meshes.
In some embodiments, the vent has a hole diameter of any value between 0.3mm and 1 mm. Understandably, the hole diameter of the vent hole may be 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1 mm.
In some embodiments, the pressure used in the compacting step is any value between 1MPa and 2 MPa. The pressure range can ensure that the salt exhaust layer and the silicon layer are not easy to denature and loosen in the pressing process, and the phenomena of pore enlargement and nonuniformity of the salt exhaust layer and the silicon layer are avoided, so that the performance of the material, particularly the performance of the silicon-aluminum material is influenced.
In some embodiments, the salt expulsion layer has a thickness of 1cm to 3cm and the silicon layer has a thickness of 10cm to 100 cm.
Understandably, the thickness of the exhaust layer can be independently selected from 1cm, 1.5cm, 2cm, 2.5cm, 3cm, and the thickness of the silicon layer can be independently selected from 10cm, 20cm, 30cm, 40cm, 50cm, 60cm, 70cm, 80cm, 90cm, 100 cm.
In some embodiments, the pressure of the pressing is 8MPa to 15MPa, and the dwell time of the pressing is 20 minutes to 60 minutes.
It is understood that the pressure of the pressing may be independently selected from 8MPa, 9MPa, 10MPa, 11MPa, 12MPa, 13MPa, 14MPa, 15 MPa. The dwell time for the pressing may be independently selected from 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes.
In some embodiments, the aluminum-containing material is a pure aluminum material. In some embodiments, the aluminum-containing material is at least one aluminum silicon alloy material. In some embodiments, the aluminum-containing material is a combination of a pure aluminum material and at least one aluminum-silicon alloy material.
In some embodiments, the aluminum-containing material is a pure aluminum material, the mass ratio of the silicon powder to the pure aluminum material is greater than or equal to 1.5, and the mass content of silicon element in the prepared silicon-aluminum material is not less than 60%. The silicon-aluminum material has better performance and is more suitable for being used as an electronic packaging material.
In some embodiments, the content of silicon element in the aluminum-silicon alloy material is 22-25% by mass, and the content of silicon element in the prepared silicon-aluminum material is not less than 27% by mass. The silicon-aluminum material has better thermal conductivity and thermal expansion coefficient and lower preparation cost, and is more suitable for large-scale preparation of electronic packaging materials.
In some embodiments, the method for preparing an electronic packaging material further comprises:
and step S40, forming a silicon carbide layer between the salt exhaust layer and the silicon layer, specifically, applying silicon carbide powder on the salt exhaust layer to compact the silicon carbide layer, and applying silicon powder on the silicon carbide layer to form the silicon layer.
Silicon carbide powder is further added to form the silicon carbide and silicon aluminum composite material, so that the thermal conductivity of the material can be further improved, and the thermal expansion coefficient of the material can be reduced. The composite material of the silicon carbide and the silicon-aluminum material prepared by the method provided by the invention has the advantages of simple process and firmer composition of the silicon carbide and the silicon-aluminum material.
In some embodiments, the silicon carbide powder has a particle size of 300 to 800 mesh. It is understood that the particle size of the silicon carbide powder may be 300 meshes, 350 meshes, 400 meshes, 450 meshes, 500 meshes, 550 meshes, 600 meshes, 650 meshes, 700 meshes, 750 meshes, 800 meshes.
In some embodiments, the method for preparing an electronic packaging material further comprises the step of heating the silicon carbide powder and/or the silicon powder, so that the temperature of the silicon carbide powder and/or the silicon powder added into the mold is higher than that of the aluminum-containing liquid. By heating the silicon carbide powder and/or silicon powder, premature cooling of the aluminum-containing liquid can be avoided. Premature cooling of the aluminum-containing liquid can result in failure of the aluminum-containing liquid to reach the bottom of the salt layer, resulting in material waste.
In some embodiments, the temperature of the silicon carbide powder added to the mold is 700 ℃ to 950 ℃. In some preferred embodiments, the temperature of the silicon carbide powder added into the mold is 750 ℃ to 950 ℃.
In some embodiments, the temperature of the silicon powder added to the mold is between 700 ℃ and 950 ℃. In some preferred embodiments, the temperature of the silicon carbide powder added into the mold is 750 ℃ to 950 ℃.
In some embodiments, the method for preparing an electronic packaging material further comprises the step of heating the salt. By heating the silicon carbide powder and/or silicon powder, premature cooling of the aluminum-containing liquid can be further avoided.
In some embodiments, the salt is heated to maintain its temperature at 500 ℃ to 720 ℃. In some preferred embodiments, the temperature of the silicon carbide powder added to the mold is between 680 ℃ and 720 ℃.
In some embodiments, the temperature of the aluminum-containing liquid is between 680 ℃ and 900 ℃.
In another aspect, the present invention also provides an electronic packaging material prepared by the method for preparing an electronic packaging material according to any one of the above embodiments.
It will be appreciated that in some embodiments, the electronic packaging material includes a layer of silicon aluminum material and a layer of foamed aluminum material. In other embodiments, the electronic packaging material includes an aluminum silicon carbide layer between the silicon aluminum material layer and the foamed aluminum material layer. Further, in some preferred embodiments, the silicon-aluminum material layer has a gradient distribution of silicon mass content.
In some embodiments, the foamed aluminum material layer has a porosity of 60% to 80% and a pore size of 0.1mm to 5 mm.
In another aspect, referring to fig. 3, the present invention further provides an apparatus for preparing an electronic packaging material by using the method for preparing an electronic packaging material according to any of the above embodiments. The apparatus comprises a base plate 1, an outer shell 2 and a ram 3.
Bottom plate 1 is fixed to be set up in 2 one ends of shell body, and pressure head 3 swing joint is at the other end of shell body 2. The base plate 1, the outer shell 2 and the pressure head 3 form a closed cavity. The base plate 1 is provided with a plurality of exhaust holes 11.
The vent holes 11 are identical to those in the open mold described above and will not be described in detail.
In some embodiments, when the electronic packaging material is prepared by using the above apparatus, the positions of the material layers formed before pressing are shown in fig. 3, and include a salt gas release layer 4, a silicon carbide layer 5, a silicon layer 6, and an aluminum-containing liquid 7, which are sequentially stacked from the bottom plate 1 toward the indenter 3.
The following are specific examples. The present invention is intended to be further described in detail to assist those skilled in the art and researchers to further understand the present invention, and the technical conditions and the like do not limit the present invention. Any modification made within the scope of the claims of the present invention is within the scope of the claims of the present invention. The examples, which are not specifically illustrated, employ drugs and equipment, all of which are conventional in the art. The experimental procedures, in which specific conditions are not indicated in the examples, were carried out according to conventional conditions, such as those described in the literature, in books, or as recommended by the manufacturer.
The following examples all used the production apparatus shown in FIG. 3.
Example 1
1. Weighing pure aluminum and silicon powder (300 meshes) according to the proportion, wherein the mass percent of the pure aluminum is 40 percent and the mass percent of the silicon powder is 60 percent.
2. The crude salt of 12 mesh was heated to 680 ℃ in a roller oven and the salt was poured into the preparation apparatus. The pressure head was pressed down at a pressure of 1MPa for 30 minutes to form a salt gas release layer.
3. And (3) heating the silicon powder weighed in the step (1) to 800 ℃, and then flatly paving the silicon powder on a salt exhaust layer. The indenter was pressed down at a pressure of 1MPa for 30 minutes to form a silicon layer.
4. Heating the pure aluminum weighed in the step 1 to melt the pure aluminum into aluminum liquid (the temperature is 900 ℃), and pouring the aluminum liquid onto a silicon layer of the preparation device. And (4) pressing down the pressure head, wherein the pressure is 8MPa, and keeping for 20 minutes to obtain the composite material.
5. And taking out the composite material, washing with water, and washing away coarse salt to obtain the composite material of the silicon-aluminum material layer and the foamed aluminum layer.
Example 2
1. Weighing the aluminum-silicon alloy (the mass percentage of silicon is 22 percent and the mass percentage of aluminum is 78 percent) and the silicon powder (300 meshes) according to the proportion, wherein the mass percentage of the aluminum-silicon alloy is 40 percent and the mass percentage of the silicon powder is 60 percent.
2. The crude salt of 12 mesh was heated to 680 ℃ in a roller oven and the salt was poured into the preparation apparatus. The pressure head was pressed down at a pressure of 1MPa for 30 minutes to form a salt gas release layer.
3. And (3) heating the silicon powder weighed in the step (1) to 800 ℃, and then flatly paving the silicon powder on a salt exhaust layer. The indenter was pressed down at a pressure of 1MPa for 30 minutes to form a silicon layer.
4. And (2) heating the aluminum-silicon alloy weighed in the step (1) to melt the aluminum-silicon alloy into aluminum alloy liquid (at the temperature of 720 ℃), and pouring the aluminum alloy liquid onto a silicon layer of a preparation device. And pressing down the pressure head at 15MPa for 30 minutes to obtain the composite material.
5. And taking out the composite material, washing with water, and washing away coarse salt to obtain the material compounded by the gradient silicon-aluminum material layer and the foamed aluminum layer.
Example 3
1. Weighing the aluminum-silicon alloy (the mass percentage of silicon is 22 percent, the mass percentage of aluminum is 78 percent), the silicon powder (300 meshes) and the silicon carbide (300 meshes) according to the proportion, wherein the mass percentage of the aluminum-silicon alloy is 30 percent, the silicon powder is 50 percent and the silicon carbide is 20 percent.
2. The crude salt of 12 mesh was heated to 680 ℃ in a roller oven and the salt was poured into the preparation apparatus. The pressure head was pressed down at 1MPa for 30 minutes to form a salt gas release layer.
3. And (3) heating the silicon powder weighed in the step (1) to 800 ℃, and then flatly paving the silicon powder on a salt exhaust layer. The indenter was pressed down at a pressure of 1MPa for 30 minutes to form a silicon layer.
4. And (3) heating the aluminum-silicon alloy weighed in the step (1) to melt the aluminum-silicon alloy into aluminum alloy liquid (the temperature is 720 ℃), and pouring the aluminum alloy liquid onto the silicon layer of the preparation device. And pressing down the pressure head at 15MPa for 60 minutes to obtain the composite material.
5. And taking out the composite material, washing with water, and washing away coarse salt to obtain the composite material of the gradient silicon-aluminum material layer, the aluminum silicon carbide layer and the foamed aluminum layer.
Example 4
The preparation process was substantially the same as that of example 3 except that the particle size of the crude salt was reduced to 40 mesh.
Example 5
The preparation process was substantially the same as that of example 3 except that the particle size of the crude salt was reduced to 100 mesh.
Example 6
The preparation method is basically the same as that of example 3, except that the particle size of the silicon powder is reduced to 800 meshes.
Test example
The material prepared in example 3 was used as a sample for the following tests:
1. macroscopic topography
As shown in fig. 4, the material prepared in example 3 includes three layers of a foamed aluminum layer, an aluminum silicon carbide layer, and a silicon aluminum layer, wherein the enlarged macro-morphology of the foamed aluminum layer is shown in fig. 5, and the enlarged macro-morphology of the aluminum silicon carbide layer and the silicon aluminum layer is shown in fig. 6.
2. Metallographic structure
As shown in fig. 7, performing binarization processing on the composite material metallographic structure photograph (10 selected photographs), and calculating the proportion of the second phase, wherein the mass percentage of Al in the aluminum silicon carbide layer is 45%, the mass percentage of SiC in the aluminum silicon carbide layer is 55%, and the result is marked as an Al-55% SiC material layer; the silicon content in the silicon-aluminum layer is distributed in a gradient manner, the mass percentage of Al in the silicon-aluminum material layer close to the aluminum silicon carbide layer is 40%, the mass percentage of Si is 60%, and the silicon-aluminum material layer is marked as an Al-60% Si material layer; the mass percentage of Al in the silicon-aluminum material layer far away from the aluminum silicon carbide layer is 88%, and the mass percentage of Si is 12%, and the material layer is marked as Al-12% Si. In fig. 7, (a) is the metallographic structure appearance of the transition portion from the Al-12% Si material layer to the Al-60% Si material layer, (b) is the metallographic structure appearance of the Al-60% Si material layer, and (c) is the metallographic structure appearance of the Al-55% SiC material layer.
3. Macrostructure comparison of foamed aluminum materials
The macro-topography of the foamed aluminum layer materials in the materials prepared in examples 3 and 4 were compared, and as shown in fig. 8, the smaller the salt particle size, the smaller the pores of the foamed aluminum layer material.
4. Thermal and mechanical properties
Each layer of the material prepared in example 3 was used as a test specimen, namely, the Al-55% SiC material layer, the Al-60% Si material layer and the Al-12% Si material layer were respectively used as test specimens to test the thermal conductivity according to ASTM C518-2010, the thermal expansion coefficient according to GB T4339-. The test results are shown in table 1:
TABLE 1
Figure BDA0003479953830000131
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, so as to understand the technical solutions of the present invention specifically and in detail, but not to be understood as the limitation of the protection scope of the invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. It should be understood that the technical solutions provided by the present invention, which are obtained by logical analysis, reasoning or limited experiments, are within the scope of the appended claims. Therefore, the protection scope of the present invention should be subject to the content of the appended claims, and the description and the drawings can be used for explaining the content of the claims.

Claims (17)

1. A preparation method of an electronic packaging material is characterized by comprising the following steps:
silicon powder and an aluminum-containing material are proportioned, wherein the aluminum-containing material comprises a pure aluminum material and/or at least one aluminum-silicon alloy material;
placing salt in an open mold with vent holes at the bottom and compacting to form a salt vent layer;
putting the silicon powder into an open die, and placing the silicon powder above a salt exhaust layer to be compacted to form a silicon layer;
and heating and melting the aluminum-containing material to form an aluminum-containing liquid, pouring the aluminum-containing liquid into the open die with the silicon layer formed, and pressing.
2. The method for preparing the electronic packaging material of claim 1, wherein the particle size of the salt is 10-40 meshes, the particle size of the silicon powder is 300-800 meshes, and the hole diameter of the vent hole is 0.3-1 mm.
3. The method for preparing the electronic packaging material of claim 1, wherein the pressure used in the compacting step is 1MPa to 2 MPa.
4. The method of claim 1, wherein the thickness of the salt-expulsion layer is 1cm to 3cm and the thickness of the silicon layer is 10cm to 100 cm.
5. The method for preparing an electronic packaging material according to claim 1, wherein the pressure of the pressing is 8MPa to 15MPa, and the dwell time of the pressing is 20 minutes to 60 minutes.
6. The method for preparing the electronic packaging material of claim 1, wherein the aluminum-containing material is a pure aluminum material, and the mass ratio of the silicon powder to the pure aluminum material is close to 1.5.
7. The method for preparing an electronic packaging material according to claim 1, wherein the aluminum-silicon alloy material contains silicon element in an amount of 22 to 25% by mass.
8. The method for preparing the electronic packaging material according to claim 1, further comprising a step of forming a silicon carbide layer between the salt gas release layer and the silicon layer, specifically, applying silicon carbide powder on the salt gas release layer to compact and form the silicon carbide layer, and applying silicon powder on the silicon carbide layer to form the silicon layer.
9. The method for preparing the electronic packaging material of claim 8, wherein the particle size of the silicon carbide powder is 300-800 meshes.
10. The method for preparing an electronic packaging material according to claim 8, further comprising the step of heating the silicon carbide powder and/or the silicon powder so that the temperature of the silicon carbide powder and/or the silicon powder added into the mold is higher than that of the aluminum-containing liquid.
11. The method of claim 10, further comprising the step of heating the salt.
12. An electronic packaging material prepared by the method for preparing an electronic packaging material according to any one of claims 1 to 11.
13. The electronic packaging material of claim 12, comprising a layer of silicon aluminum material and a layer of foamed aluminum material.
14. The electronic package material of claim 12, further comprising an aluminum silicon carbide layer between the silicon aluminum material layer and the foamed aluminum material layer.
15. The electronic packaging material of claim 13 or 14, wherein the silicon-aluminum material layer has a gradient distribution of silicon mass content.
16. The electronic packaging material of claim 13 or 14, wherein the foamed aluminum material layer has a porosity of 60% to 80% and a pore size of 0.1mm to 5 mm.
17. An apparatus for preparing electronic packaging material by using the method for preparing electronic packaging material according to any one of claims 1 to 11, comprising a bottom plate, an outer housing and a pressing head, wherein the bottom plate is fixedly arranged at one end of the outer housing, the pressing head is movably connected at the other end of the outer housing, the bottom plate, the outer housing and the pressing head form a closed cavity, and a plurality of exhaust holes are arranged on the bottom plate.
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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409764A2 (en) * 1989-07-21 1991-01-23 Lanxide Technology Company, Lp A method of forming macrocomposite bodies by self-generated vacuum techniques, and products produced therefrom
KR20010091123A (en) * 2000-03-13 2001-10-23 김영한 Method for processing metal foam using casting
US20020000302A1 (en) * 2000-04-04 2002-01-03 Blucher Joseph T. Method and apparatus for manufacturing composite materials
CN1605648A (en) * 2004-09-08 2005-04-13 哈尔滨工业大学 Low expansion superhigh silicon aluminum alloy and method for making same
KR20050055982A (en) * 2003-12-09 2005-06-14 학교법인 인하학원 Method for preparing aluminum-based foams to improve mechanical properties
CN1784281A (en) * 2003-04-16 2006-06-07 克里斯铝轧制品有限公司 Preform for foamed sheet product and foamed product manufactured therefrom
CN102832326A (en) * 2011-06-14 2012-12-19 日东电工株式会社 Encapsulating sheet and optical semiconductor element device
CN104550867A (en) * 2013-10-25 2015-04-29 青岛和德隆机械有限公司 Melt infiltration casting technology of foam aluminum alloy
CN106623782A (en) * 2016-12-01 2017-05-10 辽宁融达新材料科技有限公司 Method for preparing open pore foamed aluminum through investment casting
CN108746637A (en) * 2018-06-26 2018-11-06 中南大学 Aluminium silicon/aluminium silicon carbide gradient composites and preparation method thereof
CN109465426A (en) * 2018-12-28 2019-03-15 王楷煌 A kind of high-performance through-hole foam aluminum material and its preparation process
CN112893811A (en) * 2020-07-12 2021-06-04 中科天元(北京)科技发展有限公司 Light heat-insulating sound-absorbing composite material and preparation method thereof
US20210269697A1 (en) * 2018-07-13 2021-09-02 Denka Company Limited Metal-silicon carbide-based composite material, and method for producing metal-silicon carbide-based composite material

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409764A2 (en) * 1989-07-21 1991-01-23 Lanxide Technology Company, Lp A method of forming macrocomposite bodies by self-generated vacuum techniques, and products produced therefrom
KR20010091123A (en) * 2000-03-13 2001-10-23 김영한 Method for processing metal foam using casting
US20020000302A1 (en) * 2000-04-04 2002-01-03 Blucher Joseph T. Method and apparatus for manufacturing composite materials
CN1784281A (en) * 2003-04-16 2006-06-07 克里斯铝轧制品有限公司 Preform for foamed sheet product and foamed product manufactured therefrom
KR20050055982A (en) * 2003-12-09 2005-06-14 학교법인 인하학원 Method for preparing aluminum-based foams to improve mechanical properties
CN1605648A (en) * 2004-09-08 2005-04-13 哈尔滨工业大学 Low expansion superhigh silicon aluminum alloy and method for making same
CN102832326A (en) * 2011-06-14 2012-12-19 日东电工株式会社 Encapsulating sheet and optical semiconductor element device
CN104550867A (en) * 2013-10-25 2015-04-29 青岛和德隆机械有限公司 Melt infiltration casting technology of foam aluminum alloy
CN106623782A (en) * 2016-12-01 2017-05-10 辽宁融达新材料科技有限公司 Method for preparing open pore foamed aluminum through investment casting
CN108746637A (en) * 2018-06-26 2018-11-06 中南大学 Aluminium silicon/aluminium silicon carbide gradient composites and preparation method thereof
US20210269697A1 (en) * 2018-07-13 2021-09-02 Denka Company Limited Metal-silicon carbide-based composite material, and method for producing metal-silicon carbide-based composite material
CN109465426A (en) * 2018-12-28 2019-03-15 王楷煌 A kind of high-performance through-hole foam aluminum material and its preparation process
CN112893811A (en) * 2020-07-12 2021-06-04 中科天元(北京)科技发展有限公司 Light heat-insulating sound-absorbing composite material and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
武建国等: "增强泡沫铝复合材料制备工艺的研究" *

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