CN114496862B - Multifunctional chemical processing device and method for IC substrate - Google Patents

Multifunctional chemical processing device and method for IC substrate Download PDF

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Publication number
CN114496862B
CN114496862B CN202210389949.XA CN202210389949A CN114496862B CN 114496862 B CN114496862 B CN 114496862B CN 202210389949 A CN202210389949 A CN 202210389949A CN 114496862 B CN114496862 B CN 114496862B
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substrate
debris
particles
processing chamber
nozzle
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CN114496862A (en
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马库斯·郎
马丁·施莱
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Xinju Shenzhen Semiconductor Technology Co ltd
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Xinju Shenzhen Semiconductor Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
    • B01D29/11—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with bag, cage, hose, tube, sleeve or like filtering elements
    • B01D29/31—Self-supporting filtering elements
    • B01D29/35—Self-supporting filtering elements arranged for outward flow filtration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

The invention discloses a multifunctional chemical processing device and a method for an IC substrate, wherein the device comprises: a single plate processing chamber in which a solution for immersing the IC substrate is contained; a multi-functional nozzle system for surface treatment of an IC substrate; a water flow nozzle for forming an overflow channel on the surface of the solution that can carry away any particles and/or debris that may be present; and the filtering system is communicated with the overflow channel and is used for filtering particles and/or debris in the overflow channel. Placing an IC substrate to be processed in a solution of a single-board processing chamber; treating the surface of the IC substrate with a multi-function nozzle system and removing any particles and/or debris that may be present; the overflow channel towards the filtering system is formed by the water flow spray pipe to drive the removed particles and/or debris to flow towards the filtering system, and the filtering system is used for filtering the flowing particles and/or debris, so that the efficiency and flexibility of the IC substrate surface treatment can be effectively improved.

Description

IC substrate multifunctional chemical processing device and method
Technical Field
The invention relates to the technical field of manufacturing of high-density IC (integrated circuit) substrates and high-density PCB (printed circuit board), in particular to a multifunctional chemical processing device and method for IC substrates.
Background
With the increasing complexity of patterns on high-density PCBs and the increasing core manufacturing requirements of IC substrates, conventional processes such as stripping, dry film development, flash etching and other chemical processes have not been able to meet the industry's needs, and there is a strong need to improve the conventional processes to meet future needs.
Meanwhile, the high-density texture pattern design and the laminating condition between the same type or different types of film layers caused by the realization of the double-layer photoetching technology need a more efficient film removing means, and the challenge cannot be met by an optical-chemical method. Therefore, how to realize efficient film removal is a problem to be solved by those skilled in the art.
Disclosure of Invention
Embodiments of the present invention provide a multifunctional chemical processing apparatus and method for IC substrate, which is aimed at improving the processing efficiency and flexibility of removing particles and/or debris for IC substrate or surface and wiring area in other application directions.
The embodiment of the invention provides a multifunctional chemical processing device for an IC substrate, which comprises:
a single plate processing chamber in which a solution for immersing the IC substrate is contained;
a multi-functional nozzle system for processing the surface of the IC substrate and removing any particles and/or debris that may be present; the process treatment comprises stripping, developing and etching;
the water flow spray pipe is used for forming an overflow channel which can drive particles and/or debris to flow on the surface of the solution;
a filtration system in communication with the overflow channel for filtering particulates and/or debris in the overflow channel.
Furthermore, the bottom of the veneer processing chamber is provided with a discharge port, and a discharge valve is arranged on the discharge port.
Further, the multifunctional nozzle system comprises a pulse nozzle, a jet nozzle, a fixed spray nozzle and a swirl nozzle.
Furthermore, the pulse nozzle, the jet nozzle and the fixed spray nozzle are sequentially distributed on the side edge of the single-plate processing chamber from top to bottom; the plurality of swirl nozzles are uniformly distributed at the bottom of the veneer processing chamber.
Furthermore, the filtering system comprises a filtering pipeline provided with a water inlet and a water outlet, and a filtering net arranged in the filtering pipeline and used for filtering any particles and/or debris and solution which may exist, wherein the filtering net is positioned between the water inlet and the water outlet or behind the water outlet.
Furthermore, the water inlet is communicated with an overflow channel formed by the water flow spray pipe, and the water outlet is communicated with the multifunctional nozzle system.
Further, a rack assembly for mounting the IC substrate in the single board processing chamber is included.
Further, at least one ultrasonic device is arranged in the veneer processing chamber.
The embodiment of the invention also provides a multifunctional chemical processing method for an IC substrate, which is applied to any one of the multifunctional chemical processing devices for IC substrates, and comprises the following steps:
placing the IC substrate to be cleaned of any particulates and/or debris that may be present in a solution in a single board processing chamber;
performing a process treatment operation on the IC substrate using a multi-function nozzle system to remove any particles and/or debris that may be present on the surface of the IC substrate;
spraying water flow on the surface of the solution of the single-plate processing chamber through a water flow spray pipe to form an overflow channel facing the filtering system;
and (3) carrying out flow towards the filtering system by utilizing the overflow channel to remove any particles and/or debris possibly existing, and filtering the flowing particles and/or debris by the filtering system.
Furthermore, the bottom of the single-plate processing chamber is provided with a discharge port, and a discharge valve is arranged on the discharge port;
the IC substrate multi-functional chemical process method further comprises:
when the discharge port is closed, immersing the IC substrate to be subjected to particle and/or debris removal in a solution of a single-plate processing chamber, and performing immersion removal on the particles and/or debris on the surface of the IC substrate by using the multifunctional nozzle system;
when the discharge opening is opened, placing the IC substrate to be subjected to particle and/or debris removal in a solution of a single-board processing chamber, and spraying and removing the particles and/or debris on the surface of the IC substrate by using the multifunctional nozzle system.
The embodiment of the invention provides a multifunctional chemical processing device and a method for an IC substrate, wherein the multifunctional chemical processing device for the IC substrate comprises: a single plate processing chamber in which a solution for immersing the IC substrate is contained; a multi-function nozzle system for performing a surface preparation treatment on the IC substrate and removing any particles and/or debris that may be present; the process treatment comprises stripping, developing and etching; the water flow spray pipe is used for forming an overflow channel which can drive particles and/or debris to flow on the surface of the solution; a filtration system in communication with the overflow channel for filtering particulates and/or debris in the overflow channel. In the embodiment of the invention, the IC substrate to be processed and the IC substrate to be subjected to particle and/or debris removal are placed in the solution of a single-plate processing chamber; processing the IC substrate with the multi-function nozzle system and removing any particles and/or debris that may be on the surface of the IC substrate; the overflow channel towards the filtering system is formed by the water flow spray pipe to drive the removed particles and/or debris to flow towards the filtering system, and the filtering system is used for filtering the flowing particles and/or debris, so that the processing efficiency and flexibility of the IC substrate can be effectively improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a multi-functional chemical processing apparatus for IC substrates according to an embodiment of the present invention;
FIG. 2 is a schematic view of an embodiment of an IC substrate multi-functional chemical processing apparatus in an immersion mode;
FIG. 3 is a schematic view of a multi-functional chemical processing apparatus for IC substrates in a spray mode according to an embodiment of the present invention;
FIG. 4 is a flow chart of a multi-functional chemical processing method for an IC substrate according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in this specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items and includes such combinations.
Referring to fig. 1, an embodiment of the invention provides a multifunctional chemical processing apparatus for an IC substrate, including:
a single plate processing chamber 1, wherein the single plate processing chamber 1 contains a solution for immersing an IC substrate 7;
a multi-function nozzle system 2 for processing the surface of the IC substrate and removing any particles and/or debris that may be present; the process treatment comprises stripping, developing and etching;
the water flow nozzle 3 is used for forming an overflow channel 31 which can drive particles and/or debris to flow on the surface of the solution;
a filtering system 4, in communication with said overflow channel 31, for filtering particulates and/or debris in said overflow channel 31.
The multifunctional chemical processing apparatus for IC substrate in this embodiment comprises a single-board processing chamber 1, a multifunctional nozzle system 2, a water jet pipe 3 and a filtering system 4. When removing particles and/or debris from the IC substrate 7, the IC substrate 7 to be removed of particles and/or debris may first be placed in the solution of the single plate processing chamber 1, as indicated by the arrow in fig. 1; performing a process treatment on the IC substrate 7 by using the multifunctional nozzle system 2 to remove any particles and/or debris possibly existing on the surface of the IC substrate 7; then spraying water flow on the solution surface of the single-plate processing chamber 1 through a water flow spray pipe 3 to form an overflow channel 31 facing the filtering system 4; then, the overflow channel 31 is used to drive the removed particles and/or debris to flow towards the filtering system 4, and the filtering system 4 is used to filter the flowing particles and/or debris, thereby effectively improving the processing efficiency and flexibility of the IC substrate 7. The processing includes stripping, developing and etching, but may also include other chemical processing methods, and different chemical agents are used in different processes, and the basic processing module does not need to be changed.
It should be noted that the solution in the single-plate processing chamber 1 according to this embodiment may be different types of solutions capable of chemically reacting with the IC substrate 7, such as an electrolyte, a chemical additive, etc., or may be an aqueous solution or other chemical solvent, and may be selected according to actual requirements. In addition, it should be noted that the filtering system 4 of the present embodiment may also be a waste treatment system, other dry film treatment system, or other types of filtering and separating system. Meanwhile, the multifunctional nozzle system 2 of the present embodiment may be disposed on one side of the IC substrate 7, or may be disposed on both sides of the IC substrate 7, that is, both the processing on one side of the IC substrate 7 and the processing on both sides of the IC substrate 7 may be performed simultaneously.
In one embodiment, the bottom of the veneer processing chamber 1 is provided with a discharge port 5, and the discharge port 5 is provided with a discharge valve 51.
In this embodiment, when the discharge port 5 is closed, the IC substrate 7 to be processed and to be removed of any particles and/or debris is immersed in the solution in the single-board processing chamber 1, and the multifunctional nozzle system 2 is used to perform immersion removal of the particles and/or debris on the surface of the IC substrate 7; when the discharge port 5 is opened, the IC substrate 7 to be processed and any particles and/or debris to be removed is placed in the solution of the single board processing chamber 1, and the particles and/or debris on the surface of the IC substrate 7 are removed by spraying by using the multifunctional nozzle system 2.
In one embodiment, the multi-function nozzle system 2 includes a pulse nozzle 21, a jet nozzle 22, a stationary spray nozzle 23, and a swozzle 24.
Further, the pulse nozzle 21, the jet nozzle 22 and the fixed spray nozzle 23 are sequentially distributed on the side of the single plate processing chamber 1 from top to bottom; the number of the swirl nozzles 24 is multiple, and the plurality of swirl nozzles 24 are uniformly distributed at the bottom of the single plate processing chamber 1.
In this embodiment, the operating frequency of the pulse nozzle 21 is 5 to 80Hz, and the impact force of the jet on the surface of the IC substrate can be increased by the pulse nozzle 21. The jet nozzle 22 with internal or external gas injection can form cavitation acting force on the surface of the IC substrate, the cavitation action is introduced into a water jet technology, and parameters such as pressure, flow velocity and the like are controlled to enable water flow beams to generate a large amount of cavitation bubbles when passing through the jet nozzle 22, so that the cavitation bubbles are utilized to be broken off in a narrow area on the surface of the IC substrate 7 to generate micro jet impact of 140-170 MPa, and the effects of efficient surface treatment and particle and/or debris removal are achieved. The stationary spray nozzles 23 used for the surface treatment operate in a pressure range of 1 to 100 bar. The swirl nozzle 24 forms a swirl effect on the surface of the IC substrate 7, thereby improving the processing effect.
Further, in a specific embodiment, as shown in fig. 2, when the discharge port 5 is closed and the IC substrate 7 is immersed in the single board processing chamber 1, a swirler 24 may be disposed at the bottom of the single board processing chamber 1, so that a vortex effect is formed by the swirler 24 to remove any particles and/or debris that may be present on the surface of the IC substrate 7. As shown in fig. 3, when the discharge port 5 is opened, the solution in the single plate processing chamber 1 flows out from the discharge port, and at this time, the IC substrate 7 may be subjected to the shower process treatment through the pulse nozzle 21, the jet nozzle 22, and the fixed shower nozzle 23.
In one embodiment, the filtering system 4 comprises a filtering pipe with a water inlet and a water outlet, and a filtering net disposed in the filtering pipe and used for filtering any particles and/or debris (such as dry film and the like) and solution that may be present, the filtering net being located between the water inlet and the water outlet or behind the water outlet.
Further, the water inlet is communicated with an overflow channel 31 formed by the water flow spray pipe, and the water outlet is communicated with the multifunctional nozzle system 2.
In this embodiment, the filtering system 4 includes a filtering pipeline and a filtering net, a water inlet of the filtering pipeline is communicated with the overflow channel 31, so that the particles and/or the debris in the overflow channel 31 flow into the filtering pipeline along with the solution, then the particles and/or the debris are filtered by the filtering net in the filtering pipeline, and the solution after being filtered by the particles and/or the debris flows back to each nozzle in the multifunctional nozzle system 2 through a water outlet. Preferably, the water outlet can also be directly communicated with the veneer processing chamber 1, so that the solution directly flows back to the veneer processing chamber 1, and the effect of recycling is achieved.
In one embodiment, a rack assembly is included for standing the IC substrate 7 in the single board processing chamber 1.
In this embodiment, the IC substrate 7 is supported by the support member in the single-board processing chamber 1, that is, the IC substrate 7 is fixedly supported in the single-board processing chamber 1. Preferably, the support assembly may be a basket, a frame or a clamp, etc.
In an embodiment, said veneer treatment process chamber 1 is further provided with at least one ultrasonic device 6.
In this embodiment, the ultrasonic device 6 is provided to improve the processing performance of the multifunctional chemical processing apparatus for IC substrates, specifically, the sound energy of the power ultrasonic frequency source of the ultrasonic device 6 is converted into mechanical vibration, and the microbubbles in the solution in the single-plate processing chamber 1 can keep vibrating under the action of the sound wave due to the radiation of the ultrasonic wave, thereby improving the processing effect of the multifunctional nozzle system 2.
Further, the ultrasonic device 6 is provided in a plurality of numbers, for example, 4, etc., and the plurality of ultrasonic devices 6 may be distributed on the side wall of the veneer processing chamber 1 or may be provided at the bottom of the veneer processing chamber 1.
The present embodiment enables the IC substrate multi-functional chemical processing apparatus to operate in, for example, a spray or immersion mode by providing the discharge opening 5, and each operation mode may include additional functions such as a whirling nozzle 24 and an ultrasonic wave 6 support in the immersion mode, or a pulse nozzle 21, a jet nozzle 22 and/or a fixed spray nozzle 23 in the spray mode. All functions and modes of operation can be run in any chemical formulation setting to meet the requirements of any product.
Fig. 4 is a schematic flow chart of a multifunctional chemical processing method for an IC substrate according to an embodiment of the present invention, which is applied to the multifunctional chemical processing apparatus for an IC substrate, and specifically includes: steps S401 to S404.
S401, placing the IC substrate 7 to be removed of any particles and/or debris which may be present in the solution of the single-board processing chamber 1;
s402, performing a process treatment on the IC substrate 7 by using the multifunctional nozzle system 2 to perform an efficient surface treatment on the IC substrate 7 and remove any particles and/or debris that may be present; the process treatment comprises stripping, developing and etching;
s403, spraying water flow on the solution surface of the single-plate processing chamber 1 through the water flow spray pipe 3 to form an overflow channel 31 facing the filtering system 4;
s404, utilizing the overflow channel 31 to drive the removed any particles and/or debris which may exist to flow towards the filtering system 4, and filtering the flowing particles and/or debris through the filtering system 4.
In one embodiment, a discharge port 5 is formed at the bottom of the single-plate processing chamber 1, and a discharge valve 51 is disposed on the discharge port 5;
the IC substrate multi-functional chemical process method further comprises:
when the discharge port 5 is closed, immersing an IC substrate 7 of the IC substrate to be subjected to particle and/or debris removal in a solution of a single-plate processing chamber 1, and performing immersion removal on particles and/or debris on the surface of the IC substrate 7 by using the multifunctional nozzle system 2;
when the discharge port 5 is opened, the IC substrate 7 to be processed and any particles and/or debris to be removed is placed in the solution of the single board processing chamber 1, and the particles and/or debris on the surface of the IC substrate 7 are removed by spraying by using the multifunctional nozzle system 2.
Since the embodiment of the method portion corresponds to the embodiment of the apparatus portion, please refer to the description of the embodiment of the apparatus portion for the embodiment of the method portion, which is not repeated here.
The embodiments are described in a progressive mode in the specification, the emphasis of each embodiment is on the difference from the other embodiments, and the same and similar parts among the embodiments can be referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
It is further noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.

Claims (7)

1. A multifunctional chemical processing apparatus for IC substrates, comprising:
a single plate processing chamber in which a solution for immersing the IC substrate is contained;
a multi-functional nozzle system for process treating a surface of an IC substrate and removing particles and/or debris present; the process treatment comprises stripping, developing and etching;
the water flow spray pipe is used for forming an overflow channel which can drive particles and/or debris to flow on the surface of the solution;
a filtration system in communication with the overflow channel for filtering particulates and/or debris in the overflow channel;
the bottom of the single-plate processing chamber is provided with a discharge port, and a discharge valve is arranged on the discharge port;
the multifunctional nozzle system comprises a pulse nozzle, a jet nozzle, a fixed spray nozzle and a swirl nozzle;
the pulse nozzle, the jet nozzle and the fixed spray nozzle are sequentially distributed on the side edge of the single plate processing chamber from top to bottom; the plurality of swirl nozzles are uniformly distributed at the bottom of the veneer processing chamber.
2. The multifunctional chemical processing apparatus for IC substrates as recited in claim 1, wherein the filtering system comprises a filtering conduit having a water inlet and a water outlet and a filter screen disposed in the filtering conduit for filtering particles and/or debris and solutions present, the filter screen being disposed between the water inlet and the water outlet or behind the water outlet.
3. The IC substrate multi-functional chemical processing apparatus of claim 2, wherein the water inlet is in communication with an overflow channel formed by the water flow spout and the water outlet is in communication with the multi-functional nozzle system.
4. The multi-functional chemical processing apparatus of claim 1, further comprising a support assembly for supporting the IC substrate in the single board processing chamber.
5. The IC substrate multi-functional chemical processing apparatus of claim 1, wherein at least one ultrasonic device is further disposed in the single-plate processing chamber.
6. A multi-functional chemical process method for IC substrate, applied to the IC substrate stripping device of any claim 1 to 5, comprising:
placing the IC substrate from which the particles and/or debris present are to be removed in a solution in a single board processing chamber;
performing a process treatment operation on the IC substrate by using a multifunctional nozzle system to remove particles and/or debris existing on the surface of the IC substrate; the process treatment comprises stripping, developing and etching;
spraying water flow on the surface of the solution of the single-plate processing chamber through a water flow spray pipe to form an overflow channel facing the filtering system;
and the overflow channel is used for driving the removed particles and/or debris to flow towards the filtering system, and the flowing particles and/or debris are filtered and treated by the filtering system.
7. The multifunctional chemical processing method for IC substrates of claim 6, wherein a discharge port is opened at the bottom of the single-plate processing chamber, and a discharge valve is disposed on the discharge port;
the IC substrate multi-functional chemical process method further comprises:
when the discharge port is closed, immersing the IC substrate to be subjected to particle and/or debris removal in a solution of a single-plate processing chamber, and performing immersion removal on the particles and/or debris on the surface of the IC substrate by using the multifunctional nozzle system;
when the discharge port is opened, placing the IC substrate to be subjected to particle and/or debris removal in a solution of a single-board processing chamber, and spraying and removing the particles and/or debris on the surface of the IC substrate by using the multifunctional nozzle system.
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US20020092614A1 (en) * 2001-01-16 2002-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Wet chemical process tank with improved fluid circulation
US8409451B2 (en) * 2006-07-04 2013-04-02 Nec Corporation Apparatus for etching substrate and method of fabricating thin-glass substrate
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