CN114488714A - Optical fiber array photoetching machine - Google Patents
Optical fiber array photoetching machine Download PDFInfo
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- CN114488714A CN114488714A CN202210151925.0A CN202210151925A CN114488714A CN 114488714 A CN114488714 A CN 114488714A CN 202210151925 A CN202210151925 A CN 202210151925A CN 114488714 A CN114488714 A CN 114488714A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
Abstract
The embodiment of the disclosure provides an optical fiber array lithography machine, which comprises a control device, a laser light source, an optical fiber transmission device, a light focusing array, an electric drive workpiece table, a first-stage light splitting array, an electro-optical modulation array and a second-stage light splitting array, wherein the control device is connected with the electro-optical modulation array and the electric drive workpiece table, and the control device is used for controlling the electro-optical modulation array to modulate laser emitted by the laser light source and control the electric drive workpiece table to move based on a design layout. The embodiment of the disclosure avoids the use of a plurality of optical lenses or lens groups, thereby realizing simpler light path and greatly reducing the manufacturing and maintenance cost; a plurality of optical fibers are adopted to form an optical fiber bundle, and multi-beam parallel exposure is carried out, so that the photoetching efficiency can be improved; the electro-optical modulation array is adopted to realize the switching of the laser light energy of the photoetching and the movement of the electric drive workbench, so that the high-speed patterning function of the photoetching is realized.
Description
Technical Field
The present disclosure relates to the field of chip or integrated circuit manufacturing, and more particularly, to an optical fiber array lithography machine.
Background
The photoetching machine irradiates photoresist (photosensitive resist) coated on the surface of a wafer or a sample by utilizing photons of purple light or ultraviolet light to change the molecular size of the photoresist so as to obtain certain contrast ratio of the solubility of the photoresist in a specific solvent. The selectively exposed photoresist coated on the wafer/sample surface is developed with the solvent to form a pattern. The photoetching machine is the core equipment of a chip production line, and the minimum line width obtained after photoresist exposure is the most important index of the photoetching machine and represents the advanced degree of the chip production line. In a most advanced chip production line, 1 or more lithography machines with different processing precisions are respectively configured in a transistor manufacturing process (front process) and an interconnection process (back process) between transistors according to the integration level of transistors and the wiring requirements of chips.
Lithography machines are classified into two broad categories according to the manner in which a pattern is formed on a photoresist. The first type is to form a highly fidelity image with the mask pattern on the photoresist after passing the light spots with uniform intensity distribution through the photolithographic mask having transparent and opaque region patterns. Such lithography machines are widely used in semiconductor manufacturing lines. The second type of lithography machine is to scan a region to be exposed on the photosensitive adhesive by using a focused beam of light, or to realize exposure on the photosensitive adhesive after forming a pattern with contrast in space by using a spatial light modulator to modulate the light intensity of uniform light spots in regions, and the lithography machine is called a maskless lithography machine because the photoetching mask is not needed, the former is also called laser direct writing, and the latter is also called LDI. Both of the above two types of lithography machines are designed with free-space optical structures, i.e., light is exposed in air or vacuum when light emitted from a light source reaches the surface of the photoresist.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide an optical fiber array lithography machine to solve the problems in the prior art.
On one hand, the disclosure provides an optical fiber array lithography machine, which comprises a control device, a laser light source, an optical fiber transmission device, a light focusing array and an electric drive workbench, and further comprises a first-stage light splitting array, an electro-optical modulation array and a second-stage light splitting array, wherein the control device is connected with the electro-optical modulation array and the electric drive workbench, and the control device is used for controlling the electro-optical modulation array to modulate laser emitted by the laser light source and control the electric drive workbench to move based on a chip design layout or other design graphs.
In some embodiments, the control device is configured to decompose the design layout into a plurality of layers of patterns according to a process technology, generate lithography data based on each layer of pattern, and generate an electro-optical modulation signal for the electro-optical modulator and a control signal for the electrically driven stage based on the lithography data.
In some embodiments, the laser light source is any one of a solid laser, a semiconductor laser, and a gas laser, or an array laser composed of a plurality of the same or different continuous lasers.
In some embodiments, the first-stage light splitting array is disposed between the laser light source and the electro-optical modulation array, and includes a first beam splitter and n first-stage optical channels, the first-stage light splitting array is configured to uniformly distribute laser light emitted by the laser light source to the n first-stage optical channels through the first beam splitter, and the n first-stage optical channels output lithography light in a fiber coupler manner.
In some embodiments, the electro-optic modulation array comprises n modulation channels 4 forming an array, the modulation array corresponding to the first order optical channels, a corresponding modulator disposed in each of the modulation channels, each of the modulators modulating the lithographic light output by the corresponding first order optical channel 3.
In some embodiments, the second-stage optical splitting array is disposed between the electro-optical modulation array and the optical fiber transmission device, and includes a second optical splitter and c second-stage optical channels, and the second-stage optical splitting array evenly distributes the lithography light pulse output by each of the n modulation channels of the electro-optical modulation array into c second-stage optical channels, and the c second-stage optical channels output the lithography light pulse in a fiber coupler manner.
In some embodiments, the first optical splitter and/or the second optical splitter are separate optical elements or integrated optical waveguides.
In some embodiments, the optical fiber transmission device is a lithography optical fiber bundle, the lithography optical fiber bundle includes c sub optical fiber bundles, each sub optical fiber bundle includes n optical fibers, each optical fiber includes an optical fiber core for transmitting a light beam, an optical fiber cladding is disposed around the outer side of the optical fiber core, a helical phase structure is disposed at the incident end of the optical fiber core, and a lens structure is disposed outside the exit end of the optical fiber core.
In some embodiments, the light focusing array is a fiber lens capable of being coupled to the fiber optic transmission device.
In some embodiments, the electrically driven workpiece stage comprises a plurality of driving devices to achieve positioning and control of the exposure position on the lithographic material in three XYZ axial directions, wherein the X-axis and the Y-axis are located on a focal plane where the light focusing array achieves focusing of the light signal or a plane parallel to the focal plane, and the Z-axis is in a direction perpendicular to the focal plane.
The embodiment of the disclosure realizes connection between the laser light source and the light focusing array by adopting the optical fiber, avoids the difficulty that a photoetching machine emitting laser in free space adopts a plurality of optical lenses or lens groups in design and production, thereby realizing simpler light path and greatly reducing manufacturing and maintenance cost; a plurality of optical fibers are adopted to form an optical fiber bundle, multi-beam parallel exposure is carried out, and the photoetching efficiency is improved; the electro-optical modulation array is adopted to realize the switching of the laser light energy of the photoetching and the movement of the electric drive workbench, so that the patterning function of the photoetching is realized.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and for those skilled in the art, other drawings may be obtained according to the drawings without creative efforts.
FIG. 1 is a system diagram of a fiber array lithography machine according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a first-stage splitter array in a fiber array lithography machine according to an embodiment of the disclosure;
FIG. 3 is a schematic structural diagram of an electro-optic modulation array in a fiber array lithography machine according to an embodiment of the disclosure;
FIG. 4 is a schematic structural diagram of a second-stage light splitting array in the optical fiber array lithography machine according to the embodiment of the disclosure;
FIG. 5 is a schematic structural diagram of a lithography fiber bundle in a fiber array lithography machine according to an embodiment of the disclosure;
FIG. 6 is a schematic structural diagram of a light focusing array in a fiber array lithography machine according to an embodiment of the disclosure;
fig. 7 is a block diagram of a control device in a fiber array lithography machine according to an embodiment of the disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and the like in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
The embodiment of the disclosure relates to a fiber array lithography machine, which is used for realizing lithography operation on lithography materials of a wafer in an exposure mode based on a preset design layout for lithography. As shown in fig. 1, fig. 1 shows a schematic structural diagram of the optical fiber array lithography machine, which includes a control device 1, a laser light source 2, a first-stage beam splitting array 3, an electro-optical modulation array 4, a second-stage beam splitting array 5, an optical fiber transmission device 6, an optical fiber focusing array 7, and an electrically driven workpiece stage 8; the photoresist material here is, for example, a wafer or other material, the wafer is disposed on the electrically driven workpiece stage 8, and photoresist is coated on the wafer by using spin coating, glue spraying or other processes.
The laser light source 2 is used for emitting laser to the photoetching material on the electric drive workbench 8 so as to realize exposure based on a pre-designed design layout; the control device 1 is connected to the electro-optical modulation array 4 and the electrically driven stage 8, and is respectively configured to control the electro-optical modulation array 4 to modulate the laser emitted by the laser light source 2 based on the design layout, so as to obtain a matched exposure light pulse and control the electrically driven stage 8 to move, so that the modulated laser pulse can be exposed to the lithography material disposed on the electrically driven stage 8 to complete the lithography operation.
Specifically, as described above, the control device 1 is configured to control the electro-optical modulation array 4 to modulate the laser emitted by the laser light source 2 and control the electrically driven workpiece stage 8 to move, respectively, based on the design layout; the control device 1 can be controlled by a human-computer interface. Firstly, for example, a design layout of an integrated circuit/chip conforming to a target function is designed through graphic software, or a design layout of an integrated circuit conforming to requirements is input based on third-party design software, the design layout is decomposed into a plurality of layers of exposure patterns according to a processing technology, exposure parameters are converted into photoetching data based on the exposure patterns of each layer and according to the type of photoresist (such as positive photoresist, negative photoresist and exposure sensitivity of the photoresist), wherein the photoetching data refer to data related to exposure realization aiming at the photoetching material, and finally, an electro-optical modulation signal 11 aiming at the electro-optical modulation array 4 and a workpiece table control signal 12 aiming at the electric drive workpiece table 8 are generated based on the photoetching data.
Further, the control device 1 modulates the laser emitted by the laser light source 2 based on the electro-optical modulation signal 11, so as to obtain a laser pulse matched with the width required by the photoetching operation; the control device 1 controls the electrically driven workpiece stage 8 to move to each exposure position by the workpiece stage control signal 12 so as to realize the exposure operation. In this way, the control device 1 can synchronously control the electro-optical modulation array 4 and the electrically driven stage 8 through the electro-optical modulation signal 11 and the stage control signal 12, so as to implement an exposure operation on a photoresist on the photoresist material disposed on the electrically driven stage 8, and finally implement a precise lithography function.
As shown in fig. 7, the control device 1 obtains exposure-related data required by the lithography material based on, for example, the design layout, and decomposes the exposure-related data into driving device control data and corresponding electro-optical modulation data through a DAC module or an ADC module, where the driving device control data at least includes position information of all exposure positions and non-exposure positions on the lithography material such as a wafer required for a lithography process, and positioning information of the position of the wafer on the electrically-driven workpiece stage 8 corresponding to each exposure position and the position of the non-exposure position, and movement control data of a driving device; the electro-optical modulation data includes at least voltage signal information and pulse width information corresponding to each of the exposure positions and the unnecessary exposure positions. The electro-optical modulation signal 11 and the stage control signal 12 are respectively formed based on driving device control data and corresponding electro-optical modulation data.
The components of the optical fiber array lithography machine 1 are described in detail below.
The laser light source 2 for emitting laser light here includes a power supply and a laser, and the laser light source here may adopt various lasers, such as a solid laser, a semiconductor laser or a gas laser, and may also be an array laser composed of a plurality of the same or different lasers, the wavelength of the laser light emitted by the laser light source 2 here may be in the range of 193nm to 405nm, the power of the emitted laser light may be in the range of 1mW to 1kW, the laser light emitted by the laser light source 2 may be emitted in a manner of emitting to free space or in a manner of coupling to an optical fiber output, and a laser capable of emitting laser light in a manner of optical fiber output is preferably adopted here to facilitate the transmission of light by coupling with the following optical fiber transmission device 6.
Further, if the laser light source 2 adopts a laser emitting to a free space, the laser light source 2 may further include a fiber focusing array, and a spot focused by the fiber focusing array can be conveniently coupled to the following fiber bundles of the light splitting arrays 3 and 5 and the fiber transmission device 6.
As shown in fig. 2, the first-stage light splitting array 3 is disposed between the laser light source 2 and the electro-optical modulation array 4, and includes a first light splitter 31 and n first-stage light channels 32, where the first-stage light splitting array 3 is configured to uniformly distribute laser light emitted by the laser light source 2 into n first-stage light channels 32 through the first light splitter 31, and the n first-stage light channels 32 output lithography light in a fiber coupler manner, so that the intensity of the lithography light can be uniformly distributed in n optical fibers of the optical fiber transmission device 6. The first beam splitter 31 may be implemented by using a separate optical element such as a beam splitter, a mirror, or an integrated optical waveguide.
Further, the electro-optical modulation array 4 here includes a high-frequency electrical signal generator, which receives the electro-optical modulation signal 11 sent by the control device 1, and generates an electrical pulse which may or may not be amplified as needed, but finally adjusts the optical phase of the two arms of the optical waveguide by an electro-optical modulation method to form a laser pulse with a target width, so as to directly input the laser pulse into the following second-stage light splitting array 5.
As shown in fig. 3, the electro-optical modulation array 4 includes n modulation channels 41 forming an array, the modulation channels 41 are coupled to the first-stage optical channels 32, a corresponding modulator 42 is disposed in each modulation channel 41, and each modulator 42 corresponds to and controls and modulates the laser light output by the corresponding first-stage optical channel 32. In each of the modulation channels 41, the corresponding modulator 42 modulates the laser light to a corresponding exposure pulse width based on the electro-optical modulation signal 11. The modulation channels 41 may be optical fibers, where each modulation channel 41 and the corresponding modulator 42 may be disposed separately from each other, and the modulation channels 41 may also be optical waveguides, so that the modulators and the optical waveguides may also be integrally disposed.
As shown in fig. 4, the second light splitting array 5 is disposed between the electro-optical modulation array 4 and the optical fiber transmission device 6, and includes a second light splitter 51 and c second light channels 52, where the second light splitting array 5 uniformly distributes the lithographic light pulse output by each of the n modulation channels 41 of the electro-optical modulation array 4 into c second light channels 52, and the c second light channels 52 output the lithographic light pulse in a fiber coupler manner, so that the second light splitting array 5 outputs n × c light beams in total, each light beam has a corresponding exposure light pulse, thereby enabling the intensity of the lithographic light to be uniformly distributed in n × c optical fibers. The second beam splitter 52 may be implemented by using a separate optical element such as a beam splitter mirror or a mirror, or may be implemented by using an integrated optical waveguide.
The optical fiber transmission device 6 is an optical fiber for transmitting a modulated optical signal, and is configured to receive the light intensity pulse modulated by the electro-optical modulation array 4 and output through the second-stage light splitting array 5, where the optical fiber may be a single-film or multi-mode optical fiber, and the material of the optical fiber may be made of an organic optical fiber or a quartz optical fiber, and here, a single-mode quartz optical fiber is preferably used. The optical fiber transmission device 6 outputs optical pulse signals for realizing exposure.
In one embodiment, as shown in fig. 5, the optical fiber transmission device 6 receives a light beam 11, which at least receives a gaussian light beam 11 and achieves focusing on a focal plane 25, the optical fiber transmission device 6 may be a lithography optical fiber bundle, the lithography optical fiber bundle includes c sub optical fiber bundles with the same number c of chips to be produced on the wafer, each sub optical fiber bundle includes n optical fibers, each lithography optical fiber includes an optical fiber core 22 for transmitting a light beam, an optical fiber cladding 21 is disposed around the outer side of the optical fiber core 22, a spiral phase structure 23 is disposed at the incident end of the optical fiber core 22, the spiral phase structure 23 is used for converting a de-excited gaussian light beam from the outside, for example, into a structural light beam in a doughnut shape, and a lens structure 24 is disposed outside the exit end of the optical fiber core 22. The condenser lens 24 may be a fiber lens, and each fiber has the same focal length after focusing the exposure light pulse.
In this embodiment, considering that the optical fiber bundle for lithography includes c sub-optical fiber bundles, each of which includes n optical fibers, for this purpose, the optical fiber bundle for lithography includes n × c optical fibers, specifically, each of the optical fibers in the sub-optical fiber bundles is spatially and uniformly distributed over the geometric space of the chip, the optical fiber bundle for lithography divides the n × c optical fibers into c sub-optical fiber bundles according to the parallel exposure requirement, and the n optical fibers in different sub-optical fiber bundles are uniformly distributed over the space similar to the exposure area of the chip according to the same number. Thus, the bundle of optical fibers for lithography has at least n × c optical fibers, wherein n × c optical fibers are respectively coupled to n × c second stage optical channels 52 output from the second stage splitting array 5. Through the mutual matching of the first-stage light splitting array 3, the second-stage light splitting array 5 and the optical fiber transmission 6, the multi-beam parallel photoetching is realized in an optical fiber array mode, and the productivity of the photoetching machine is improved.
As shown in fig. 6, the optical fiber focusing array 7 may be an optical fiber lens, which can be coupled to the optical fiber transmission device 6, where the optical fiber focusing array 7 spatially arranges n × c optical fibers into a sub-optical fiber bundle structure corresponding to c chips on a wafer to be processed on a production line, and each sub-optical fiber bundle spatially and uniformly arranges n optical fibers in the same order on the corresponding chip, as shown in fig. 6, n optical fibers in each sub-optical fiber bundle form a sub-focal plane for an exposure light pulse, and the sub-focal planes of c sub-optical fiber bundles form an exposure focal plane.
The electrically driven stage 8 here comprises a plurality of driving means, such as motor units, to achieve fine positioning and control of the exposure position on the lithographic material in three XYZ axes, wherein the X-axis and Y-axis are located in the focal plane where the optical fiber focusing array 7 achieves focusing of the optical pulses or in a plane parallel to the focal plane, and the Z-axis is in a direction perpendicular to the focal plane.
Further, the positioning and control accuracy of the electrically driven workpiece stage 8 in the Z-axis direction is in the order of 100nm to 10 um. For this reason, the motion control in the Z-axis direction can be preferably realized by a stepping motor, and can also be realized by a piezoelectric motor, wherein the motor unit controls the maximum displacement of the motion of the electrically driven workpiece stage 8 to be between 5mm and 50 mm;
the motion of electric drive work piece platform 8 in X axle and Y axle direction is controlled by two sets of independent motor element respectively, every group the motor element includes step motor and piezoelectric motor at least, every group the positioning accuracy of motor element for example can be realized by the laser interferometer, for example utilize the positioning signal of laser interferometer transmission and piezoelectric motor's drive signal to constitute closed-loop control signal with control positioning accuracy, like this for two axial location and the control accuracy control of Y axle and X axle that are located the focal plane are between 2nm to 1um, motor element control the electric drive work piece platform 8's the biggest displacement of motion is 50mm to 320 mm. Of course, the electrically driven stage 8 may also have rotation in the focal plane and tilt positioning and control capability with the XY plane normal off the focused light.
The embodiment of the disclosure can realize the formation of a large-area and high-precision micro-nano structure on the surface of a photoetching material such as a wafer or other materials, so as to meet the research, research and development and production requirements of integrated circuits and other micro-nano systems.
The optical fiber array photoetching machine related to the embodiment of the disclosure adopts an ultraviolet laser light source as photoetching light, the photoetching light is transmitted to the electro-optical modulation array through the light splitting array to realize high-speed modulation of light intensity of the photoetching light, the modulation frequency can reach 100GHz, exposure light pulses are further transmitted to the optical fiber transmission device through the light splitting array, thus parallel processing is realized through a plurality of optical fiber arrays, and high-speed large-area micron-nanometer patterns are realized on a semiconductor wafer or other research and development samples coated with the photoresist by utilizing a synchronized electrically-driven workpiece table and electro-optical modulation, so that the requirement of chip production is met. Specifically, the optical fiber lithography machine related to the embodiment of the present disclosure realizes the lithography function by the following scheme.
(1) Coating photoresist with an ideal thickness on the surface of a semiconductor wafer or other materials needing photoetching, curing the photoresist by baking and the like, and then arranging the photoetching materials on the electrically driven workpiece stage 8, wherein the electrically driven workpiece stage 8 realizes the movement and the positioning in the Z-axis direction through a driving device for controlling the movement in the Z-axis direction, and the photoresist is positioned in a focal plane formed by the optical fiber focusing array 7; the electro-optic modulation array 4 calls the electro-optic modulation pulse width for calibration to complete the photoetching of the exposure point position corresponding to each optical fiber; and calculating and storing the deviation of the point position exposure structure and the calibration graph of each optical fiber after development and fixation through the control device 1, and correcting the photoetching pulse width corresponding to each optical fiber.
(2) Designing a design layout for a chip or a micro-nano system on design software built in the control device 1, or converting the design layout obtained by third-party software design and then leading the converted design layout into the control device 1; the control device 1 decomposes a design layout for a chip or a micro-nano system into a plurality of layers of patterns according to a processing technology, and generates photoetching data based on each layer of pattern.
The control device 1 obtains lithography data required by lithography operation and relevant to exposure realization based on the design layout, and decomposes the lithography data into drive device control data and corresponding electro-optical modulation data, wherein the drive device control data at least comprises position information of all exposure positions and non-exposure positions on the lithography materials such as wafers and the like required by process lithography, and positioning of the positions of the lithography materials on the electrically-driven workpiece stage 8 corresponding to each position and movement control data of the drive device; the electro-optical modulation data includes at least voltage signal data and pulse width data corresponding to each of the exposure positions and the unnecessary exposure positions.
(3) After a wafer coated with a lithography material, for example, is moved to the position of the focal plane of the optical fiber focusing array 7 by the electrically driven stage 8, the control device 1 controls the electrically driven stage 8 to move in the X-axis and Y-axis directions based on the stage control signal 12, and moves the lithography material to an initial exposure position, and then modulates the exposure material to obtain a matched exposure light pulse based on the electro-optical modulation signal 11 according to a modulation voltage and a pulse width signal corresponding to each exposure position in the electro-optical modulation data, thereby finally completing the lithography operation at the current exposure position;
the control device 1 continues to control the electric drive workpiece stage 8 to move in the focal plane, moves the semiconductor wafer coated with the photoresist and the like to the next exposure position in the current lithography data, and executes the corresponding electro-optical modulation action in the electro-optical modulation data.
And when the exposure operation of the exposure position of each optical fiber of each corresponding chip in the driving device control data and the electro-optical modulation data is sequentially completed based on the electro-optical modulation signal 11 aiming at the electro-optical modulation array 4 and the workpiece stage control signal 12 aiming at the electric drive control stage 8 sent by the control device 1, the photoetching of the current wafer is completed.
(4) After the current photoetching is completed, the photoetching materials such as the wafer and the like exit the optical fiber photoetching machine through the electric drive workpiece table 8, and enter other etching or coating or ion implantation, annealing or other related processes after development and fixation, so that all process steps of the photoetching operation are completed.
(5) And (3) repeating the steps (1) to (3) according to the actual situation of the design layout or the process line of the chip or the micro-nano system, and thus completing the photoetching process of the chip or the micro-nano system.
The embodiment of the disclosure adopts a laser light source in a range of 193nm to 405nm as photoetching light, utilizes an electro-optical modulation array to carry out on-off control of light intensity on the photoetching light, and the modulation frequency can reach 100 GHz; furthermore, a plurality of optical fibers form an array for parallel processing, so that the exposure yield is further improved; high speed processing of large area microscale nanoscale patterns on photoresist coated semiconductor wafers or other research and development samples using synchronized electrically driven workpiece stages and electro-optic modulation. In particular, the optical fiber array is adopted in the embodiment to realize the multi-beam parallel photoetching, so that the productivity of the photoetching machine is improved. The embodiment of the disclosure can directly realize photoetching from the layout of chip design without a photoetching mask plate, thereby realizing the digital production of the chip. The embodiment of the disclosure is suitable for research, development and production of integrated circuits or other similar integrated micro-nano systems.
The foregoing description is only exemplary of the preferred embodiments of the disclosure and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the disclosure herein is not limited to the particular combination of features described above, but also encompasses other embodiments in which any combination of the features described above or their equivalents does not depart from the spirit of the disclosure. For example, the above features and (but not limited to) the features disclosed in this disclosure having similar functions are replaced with each other to form the technical solution.
Further, while operations are depicted in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order. Under certain circumstances, multitasking and parallel processing may be advantageous. Likewise, while several specific implementation details are included in the above discussion, these should not be construed as limitations on the scope of the disclosure. Certain features that are described in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination.
Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing the claims.
While the present disclosure has been described in detail with reference to the embodiments, the present disclosure is not limited to the specific embodiments, and those skilled in the art can make various modifications and alterations based on the concept of the present disclosure, and the modifications and alterations should fall within the scope of the present disclosure as claimed.
Claims (10)
1. An optical fiber array photoetching machine comprises a control device, a laser light source, an optical fiber transmission device, a light focusing array and an electric drive workpiece table, and is characterized by further comprising a first-stage light splitting array, an electro-optical modulation array and a second-stage light splitting array, wherein the control device is connected with the electro-optical modulation array and the electric drive workpiece table, and the control device is used for controlling the electro-optical modulation array to carry out intensity modulation on laser emitted by the laser light source and controlling the electric drive workpiece table to move based on a design layout.
2. The optical fiber array lithography machine according to claim 1, wherein said control means is configured to decompose said design layout into a plurality of layers of patterns according to a fabrication process, and to generate lithography data based on each layer of patterns, and to generate an electro-optical modulation signal for said electro-optical modulator and a stage control signal for said electrically driven stage based on said lithography data.
3. The optical fiber array lithography machine according to claim 1, wherein the laser light source adopts any one of a solid laser, a semiconductor laser, a gas laser or a laser array composed of a plurality of identical or different continuous lasers.
4. The optical fiber array lithography machine according to claim 1, wherein the first-stage light splitting array is disposed between the laser light source and the electro-optical modulation array, and comprises a first beam splitter and n first-stage optical channels, the first-stage light splitting array is configured to uniformly distribute laser light emitted by the laser light source to the n first-stage optical channels through the first beam splitter, and the n first-stage optical channels output lithography light in a fiber coupler manner.
5. The fiber array lithography machine of claim 4, wherein said electro-optical modulation array comprises n modulation channels 4 forming an array, said modulation channels being coupled with said first order optical channels correspondingly, a corresponding modulator being provided in each of said modulation channels, each of said modulators controlling and modulating the lithography light output by the corresponding said first order optical channels 3.
6. The optical fiber array lithography machine according to claim 5, wherein the second-stage optical splitter array is disposed between the electro-optical modulation array and the optical fiber transmission device, and comprises a second optical splitter and c second-stage optical channels, the second-stage optical splitter array evenly distributes the lithography light pulse output by each of the n modulation channels of the electro-optical modulation array into the c second-stage optical channels, and the c second-stage optical channels output the lithography light pulse in a fiber coupler manner.
7. The optical fiber array lithography machine according to claim 8, wherein the first beam splitter and/or the second beam splitter is a split optical element or an integrated optical waveguide.
8. The optical fiber array lithography machine according to claim 1, wherein the optical fiber transmission device is a lithography optical fiber bundle, the lithography optical fiber bundle comprises c sub optical fiber bundles, each sub optical fiber bundle comprises n optical fibers, each optical fiber comprises an optical fiber core for transmitting a light beam, an optical fiber cladding is arranged around the outer side of the optical fiber core, a helical phase structure is arranged at the incident end of the optical fiber core, and a lens structure is arranged on the outer side of the exit end of the optical fiber core.
9. The optical fiber array lithography machine according to claim 1, wherein said light focusing array is a fiber lens that can be coupled to said fiber optic transmission device 6.
10. The optical fiber array lithography machine according to claim 1, wherein the electrically driven stage comprises a plurality of driving means to achieve positioning and control of the exposure position on the lithography material in three axes XYZ, wherein the X-axis and the Y-axis are located on a focal plane where the light focusing array achieves focusing of the light signal or a plane parallel to the focal plane, and the Z-axis is along a direction perpendicular to the focal plane.
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| WO2023155492A1 (en) * | 2022-02-18 | 2023-08-24 | 西湖大学 | Optical fiber bundle for lithography and lithography machine |
| CN116931387A (en) * | 2023-07-26 | 2023-10-24 | 无锡物联网创新中心有限公司 | Opto-electronic control system for arrayed digital photoetching machine |
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