CN113189848A - Multichannel parallel super-resolution direct-writing lithography system based on optical fiber array - Google Patents
Multichannel parallel super-resolution direct-writing lithography system based on optical fiber array Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The invention discloses a multichannel parallel super-resolution direct-writing photoetching system based on an optical fiber array, which initiates photopolymerization of negative photoresist through the two-photon effect of exciting light, and introduces a suppression light beam to prevent the photopolymerization of the photoresist at the edge position of an exciting light focal spot, so that the minimum characteristic dimension of direct-writing photoetching breaks through the limitation of optical diffraction limit; and the multi-channel parallel direct writing is realized through the optical fiber array and the common space optical device, and the operating efficiency of the direct writing type photoetching system is greatly improved. The invention uses the optical fiber and space optical device which are sold in the market to construct the system, has high feasibility and low realization cost.
Description
Technical Field
The invention belongs to the technical field of optics and the field of optical micromachining, and particularly relates to a multichannel parallel super-resolution direct-writing lithography system based on an optical fiber array.
Background
Photolithography plays a significant role in many areas of research and manufacturing today. Such as the fabrication of large scale integrated circuits, high precision optical microlenses, micro-mount structures in biology and medicine, etc., all require lithography to implement. Although the photolithography method of large-area exposure through a reticle has made the present large-scale integrated circuits highly efficient, direct-write lithography still has its irreplaceable advantages in some fields. For example, a photolithography method for performing large-area exposure through a reticle is only suitable for mass production of repetitive structures on a two-dimensional plane, while direct-write lithography can perform fine processing of arbitrary structures in a three-dimensional space, and the reticle fabrication of the reticle also needs to be performed by some kind of direct-write lithography.
The current photon-based direct-write lithography technology mainly faces two problems:
firstly, because an optical system has diffraction limit, the diameter of a focal spot converged by a light beam for photoetching can only reach half of the wavelength at the minimum, while direct-write photoetching is processed by using the focal spot to trigger the denaturation of photoresist, so that the minimum feature size realized by the photoetching technology cannot be lower than half of the wavelength of the adopted light source theoretically. The wavelength range of visible light is about 400nm-700nm, so if visible light is used as the light source for direct-write lithography, the minimum feature size obtained cannot be less than 200 nm. Such feature sizes have not been able to meet the requirements of many practical applications.
Secondly, the direct writing type photoetching realizes the writing of the three-dimensional structure by adopting a point-by-point exposure method in the photoresist sample cell, and the writing speed is very slow compared with the large-area exposure method through the mask. There are some negative photoresists that are initially liquid and the resist molecules can undergo photopolymerization by absorbing two photons of excitation light simultaneously (two-photon effect). The two-photon excitation can occur only in a region with very large power density of the excitation light, which is equivalent to reducing the effective action range of the focused focal spot of the excitation light. On the other hand, such a negative photoresist is also unable to undergo photopolymerization by irradiation with light of another specific wavelength, which is referred to as inhibition light. By covering the peripheral region of the excitation light focal spot with the annular suppression light, the effective range of the excitation light can be effectively reduced.
Disclosure of Invention
The invention aims to solve the problems that the existing direct-writing photoetching technology is slow in writing speed and limited by diffraction limit in writing precision, and provides a multichannel parallel super-resolution direct-writing photoetching system based on an optical fiber array.
The purpose of the invention is realized by the following technical scheme: a multi-channel parallel super-resolution direct-writing photoetching system based on an optical fiber array comprises an excitation light source, a suppression light source, a multi-channel light splitting unit, two groups of optical fiber arrays, an optical switch array compatible with the optical fiber arrays, a spatial light modulation unit for modulating an optical field output by the optical fiber arrays, a three-dimensional displacement table and a computer control unit. And the three-dimensional displacement platform carries a photoresist sample pool.
Exciting light emitted by an exciting light source and inhibiting light emitted by an inhibiting light source respectively pass through the multi-channel light splitting unit, the optical switch array, the optical fiber array and the spatial light modulation unit in sequence and finally reach the photoresist sample cell. The exciting light emitted by the exciting light source initiates photopolymerization of the photoresist in a focusing area of the exciting light; and inhibiting the photoresist in the irradiation range from photopolymerization by inhibiting the inhibiting light emitted by the light source.
The computer control unit respectively controls the on-off of the optical switch array connected with the optical fiber array and the three-dimensional displacement table.
The spatial light modulation unit consists of a plurality of groups of optical lenses and other optical devices, and has the functions of:
firstly, modulating an output light field of an inhibition optical fiber array into a vortex light beam array with annular light field distribution characteristics, and modulating an output light field of an excitation optical fiber array into a light beam array with Gaussian light field distribution characteristics;
secondly, combining the modulated inhibition light and the excitation light beam array and ensuring that each excitation light is strictly coaxial with one inhibition light;
thirdly, converging the total light field in the photoresist sample pool, enabling the focused focal spots of the exciting light beam array to be located on the same focal plane, enabling the size of the focal spot of each exciting light on the focal plane to reach a diffraction limit, and enabling the annular focal spot of the inhibiting light on the focal plane to cover a partial peripheral area of the Gaussian focal spot of the exciting light.
Furthermore, the multi-channel light splitting unit is composed of a spatial light splitting device, a fiber port coupler for coupling spatial light into an optical fiber, and a fiber coupler. The multi-channel light splitting unit equally divides the laser beam emitted by the single light source into a plurality of parts with equal power, and the parts are respectively used as the input of each optical fiber in the optical fiber array.
Further, the spatial light splitting device is a half-wave plate and a polarization beam splitter.
Furthermore, each optical switch of the optical switch array independently controls the on-off of a single optical fiber in the optical fiber array.
Furthermore, the three-dimensional displacement platform is used for controlling the displacement of the photoresist sample pool in the x, y and z directions, and is matched with the optical switch array to enable the excitation beam focal spot to be generated at a specific space position in the photoresist sample pool and initiate the photopolymerization of the photoresist at the position.
Further, the fiber array is composed of a set of fibers with completely consistent characteristic parameters. For an input light source, the optical fibers in the optical fiber array only support the output of a fundamental mode, and the divergence angle of the emergent light field of each optical fiber in the two groups of optical fiber arrays is equal to the diameter of the mode field.
Further, the optical fiber array is arranged in a form of a row or a matrix which is closely arranged.
Furthermore, the extinction ratio of each optical switch in the optical switch array is not less than 50dB, and the maximum modulation frequency of the optical switch modulation is not lower than 1 KHz.
Further, the optical switch array is implemented by an acousto-optic modulator or electro-optic modulator integrated in an optical fiber.
Further, the minimum step size of three-direction displacement of the three-dimensional displacement table is in the nanometer or sub-nanometer magnitude.
The invention has the beneficial effects that: the invention greatly reduces the range of photo-polymerization of the photoresist caused by the actual excitation light by inhibiting the introduction of light, so that the photoetching precision can break through the limit of diffraction limit. The invention controls the parallel direct-writing photoetching process through the computer control unit in a global way, and comprises the steps of controlling the on-off of the output of each optical fiber in real time through an optical fiber switch array, and controlling the array light field focal spots to expose certain specific positions in a sample pool in real time through a precise three-dimensional displacement platform carrying a photoresist sample pool. And developing the exposed photoresist sample cell by a developing solution to obtain the required three-dimensional structure. By the scheme of the multichannel parallel direct writing, the efficiency of the direct writing lithography can be greatly improved.
Drawings
FIG. 1 is a schematic diagram of the light splitting and multi-channel switch control of the excitation light source and the inhibition light source of the present invention;
FIG. 2 is a schematic diagram of a transmission modulation scheme for the emergent light field of the fiber array according to the present invention;
FIG. 3 is a schematic diagram of a reflective modulation scheme for the emergent light field of the fiber array according to the present invention;
FIG. 4 is a schematic diagram of five-channel system light spots arranged longitudinally at equal intervals; wherein, the left side is a focal spot array formed by the exciting light; the middle is an annular bright spot array for inhibiting light from forming; the right side is an effective light spot array which can actually initiate the photopolymerization of the photoresist under the combined action of exciting light and inhibiting light;
in the figure: 1. an excitation light source; 2. a first half wave plate; 3. a first polarizing beam splitter; 4. a second half-wave plate; 5. a second polarizing beam splitter; 6. a third half-wave plate; 7. a third polarization beam splitter; 8. a first fiber port coupler; 9. a second fiber port coupler; 10. a third fiber port coupler; 11. a fourth fiber port coupler; 12. a first 1 x 4 fiber coupler; 13. a second 1 × 4 fiber coupler; 14. a third 1 × 4 fiber coupler; 15. a fourth 1 × 4 fiber coupler; 16-31, a fiber optic acousto-optic modulator; 32. suppressing the light source; 33. a fourth half-wave plate; 34. a fourth polarizing beam splitter; 35. a fifth half-wave plate; 36. a fifth polarizing beam splitter; 37. a sixth half-wave plate; 38. a sixth polarizing beam splitter; 39. a fifth fiber port coupler; 40. a sixth fiber port coupler; 41. a seventh fiber port coupler; 42. an eighth fiber port coupler; 43. a fifth 1 × 4 fiber coupler; 44. a sixth 1 × 4 fiber coupler; 45. a seventh 1 × 4 fiber coupler; 46. an eighth 1 × 4 fiber coupler; 47-62, optical fiber acousto-optic modulator; 63. a computer control unit; 64. a first array of optical fibers; 65. a first scanning lens; 66. a transmissive beam shaping element; 67. a first lens; 68. a first planar mirror; 69. a second lens; 70. a second array of optical fibers; 71. a second scanning lens; 72. a transmissive beam modulating element; 73. a third lens; 74. a fourth lens; 75. a first semi-reflective semi-transparent mirror; 76. a third scanning lens; 77. a first field lens; 78. a first microscope objective; 79. a first high-precision three-dimensional displacement table; 80. a third array of optical fibers; 81. a fourth scanning lens; 82. a fifth lens; 83. a second planar mirror; 84. a sixth lens; 85. a first reflective spatial light modulator; 86. a seventh lens; 87. a third plane mirror; 88. an eighth lens; 89. a fourth array of optical fibers; 90. a fifth scanning lens; 91. a ninth lens; 92. a tenth lens; 93. a second reflective spatial light modulator; 94. an eleventh lens; 95. a fourth plane mirror; 96. a twelfth lens; 97. a second half-reflecting and half-transmitting mirror; 98. a sixth scanning lens; 99. a second field lens; 100. a second microscope objective; 101. and a second high-precision three-dimensional displacement table.
Detailed Description
The invention relates to a multichannel parallel super-resolution direct-writing lithography system based on an optical fiber array, which comprises a generation device of an optical fiber array input optical signal and a spatial light modulation unit for modulating an optical fiber array output optical field, and can be realized in various forms. The invention uses collimated light beams emitted by two laser light sources (excitation light source and inhibition light source) with different wavelengths to be split and then enter two groups of optical fiber arrays, and the light beam array emitted from the optical fiber arrays is modulated by a subsequent space optical device to form an array type light field required by photoetching. The array light field formed by the exciting light consists of a plurality of Gaussian spots focused to a diffraction limit, the array light field formed by the inhibiting light consists of a plurality of annular spots focused to the diffraction limit and provided with central dark spots, each annular spot in the inhibiting light array type light field is superposed with the center of the corresponding Gaussian spot in the exciting light array type light field, and the annular inhibiting spots can cover most of the peripheral area of the Gaussian exciting spots. The negative photoresist matched with the exciting light and the inhibiting light is adopted for photoetching, the exciting light can initiate the photopolymerization of the photoresist in the focal spot range, and the inhibiting light can prevent the photopolymerization of the photoresist in the irradiation range.
In order to more clearly explain the objects, technical solutions and advantages of the present invention, the following detailed description of the present invention is provided with reference to the embodiments and the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Those skilled in the art should understand that they can make modifications and equivalents without departing from the spirit and scope of the present invention.
As shown in fig. 1, the device for generating an input optical signal of an optical fiber array of the present invention includes a light source and a multi-channel light splitting unit integrated with an optical switch array, and specifically includes an excitation light source 1, a suppression light source 32, six half-wave plates, six polarization beam splitters, eight optical fiber port couplers, eight 1 × 4 optical fiber couplers, thirty-two optical fiber acousto-optic modulators, and a computer control unit 63.
The laser beam emitted by the excitation light source 1 is divided into two beams by the first half-wave plate 2 and the first polarization beam splitter 3, wherein one beam is divided into two beams by the second half-wave plate 4 and the second polarization beam splitter 5, and the other beam is divided into two beams by the third half-wave plate 6 and the third polarization beam splitter 7. 4 beams of space light output from the second polarization beam splitter 5 and the third polarization beam splitter 7 are respectively coupled into the input ends of four 1 × 4 optical fiber couplers 12-15 through optical fiber port couplers 8-11, and after the light is split by the four 1 × 4 optical fiber couplers 12-15, the excitation light is divided into 16 paths to be input into a subsequent optical fiber array. Each input light of the optical fiber array is independently controlled to be switched on and off by the optical fiber acousto-optic modulators 16-31 controlled by the computer control unit 63. Where the four 1 x 4 fiber couplers 12-15 have the same characteristic parameters and the four outputs have a 1: 1: 1: 1 split ratio.
In the specific implementation process, the rotation angles of the first half-wave plate 2, the second half-wave plate 4 and the third half-wave plate 6 relative to the first polarization beam splitter 3, the second polarization beam splitter 5 and the third polarization beam splitter 7 are adjusted, so that the optical power of each path of the excitation light source which is split by the polarization beam splitters and input into the subsequent optical fiber array is approximately equal. The parallel super-resolution direct-writing lithography system is not limited to 16-channel parallel direct writing, and can realize the parallel direct writing of any channel by freely increasing and decreasing the number of the half-wave plates, the polarization beam splitters and the optical fiber couplers in the light splitting unit.
Preferably, the suppression light is split using a light path symmetrical to the excitation light, and the laser beam emitted by the suppression light source 32 is split into two beams via the fourth half-wave plate 33 and the fourth polarization beam splitter 34, one beam being split into two beams via the fifth half-wave plate 35 and the fifth polarization beam splitter 36, and the other beam being split into two beams via the sixth half-wave plate 37 and the sixth polarization beam splitter 38. The 4 spatial beams output from the fifth polarization beam splitter 36 and the sixth polarization beam splitter 38 are respectively coupled into the input ends of the four 1 × 4 fiber couplers 43-46 through the fiber port couplers 39-42, and after being split by the four 1 × 4 fiber couplers 43-46, the suppressed light is divided into 16 paths to be input into the subsequent fiber array. Each path of input light of the optical fiber array is independently controlled to be on or off by the optical fiber acousto-optic modulator 47-62 controlled by the computer control unit 63. Of these, the four 1 × 4 fiber couplers 43-46 have the same characteristic parameters, and the four outputs have a 1: 1: 1: 1 split ratio.
In a specific implementation process, the rotation angles of the fourth half-wave plate 33, the fifth half-wave plate 35 and the sixth half-wave plate 37 relative to the fourth polarization beam splitter 34, the fifth polarization beam splitter 36 and the sixth polarization beam splitter 38 are adjusted, so that the optical power of each path of light which is split by the light source through the polarization beam splitter and input into a subsequent optical fiber array is approximately equal. The parallel super-resolution direct-writing lithography system is not limited to 16-channel parallel direct writing, and the number of channels of the inhibition light and the excitation light can be consistent by freely increasing or decreasing the number of the half-wave plates, the polarization beam splitters and the optical fiber couplers in the light splitting unit.
As shown in fig. 2, the transmissive spatial light modulation unit according to the present invention for modulating an optical field output from an optical fiber array includes a first optical fiber array 64, a second optical fiber array 70, three scanning lenses, a transmissive beam shaping element 66, four lenses, a first plane mirror 68, a transmissive beam modulation element 72, a first semi-reflective semi-transparent mirror 75, a first field mirror 77, a first microscope objective 78, and a first high-precision three-dimensional displacement stage 79. Wherein, a photoresist sample cell is carried on the first high-precision three-dimensional displacement table 79.
The excitation light beam array output by the first optical fiber array 64 is condensed into a set of parallel light beams whose optical axes are not parallel to each other via the first scanning lens 65, and the optical axes of the set of parallel light beams each pass through the back focus of the first scanning lens 65. In practical applications, since the off-axis distance of each optical fiber in the optical fiber array is small, the off-axis angle of the parallel light beams after the output light beam array is converged by the first scanning lens 65 is also small, so that the light field cross sections of the parallel light beams on the back focal plane of the first scanning lens 65 are almost coincident. Each parallel beam can be approximately equally beam shaped by a transmissive beam shaping element 66 placed in the back focal plane of the first scan lens 65. For example, the transmissive beam-shaping element 66 may be a simple aperture stop, or may be a transmissive spatial light modulator to perform more precise beam shaping. The shaped array of light beams passes through a 4F system of a first lens 67, a first plane mirror 68 and a second lens 69 to conjugate the shaped array of light beams at the front focal plane of the first lens 67 to the back focal plane of the second lens 69.
The array of suppressed light beams output by the second optical fiber array 70 is converged into a set of parallel light beams whose optical axes are not parallel to each other via the second scanning lens 71, and the optical axes of the set of parallel light beams each pass through the back focus of the second scanning lens 71. Each of the parallel light beams can be modulated into approximately the same annular light beam by a transmissive light beam modulating element 72 placed on the back focal plane of the second scanning lens 71. For example, the transmissive light beam modulator 72 may be a vortex phase plate for suppressing the wavelength of light, or the transmissive spatial light modulator may modulate each light beam into a vortex light beam. The modulated annular light beam array passes through a 4F system formed by a third lens 73 and a fourth lens 74, and the shaped light beam array at the front focal plane of the third lens 73 is conjugated to the back focal plane of the fourth lens 74.
The modulated excitation light beam array and the modulated suppression light beam array are combined through a first half-reflecting half-transmitting lens 75, the combined light beam array passes through a third scanning lens 76 and a first field lens 77, images on the back focal plane of a second lens 69 and the back focal plane of a fourth lens 74 are simultaneously conjugated to the entrance pupil plane of a first microscope objective lens 78, and the combined light beam array is focused into a lattice light field required by parallel super-resolution direct writing lithography through the first microscope objective lens 78.
The computer control unit 63 controls the first high-precision three-dimensional displacement table 79 to move three-dimensionally, and the computer control unit 63 is matched to control the on-off of the optical fiber acousto-optic modulators 16-31 and 47-62 in real time, so that the parallel super-resolution direct writing of any point in the photoresist sample pool can be realized.
As shown in fig. 3, the reflective spatial light modulation unit for modulating an optical field output by an optical fiber array of the present invention includes a third optical fiber array 80, a fourth optical fiber array 89, three scanning lenses, eight lenses, three plane mirrors, two reflective spatial light modulators, a second half-reflecting and half-transmitting lens 97, a second field lens 99, a second microscope objective 100, and a second high-precision three-dimensional displacement stage 101. Wherein, a photoresist sample cell is carried on the second high-precision three-dimensional displacement platform 101.
The excitation light beam array output by the third optical fiber array 80 is converged into a set of parallel light beams whose optical axes are not parallel to each other via the fourth scanning lens 81, and the optical axes of the set of parallel light beams all pass through the back focus of the fourth scanning lens 81. In practical application, because the off-axis distance of each optical fiber in the optical fiber array is small, the off-axis angle of the parallel light beams after the output light beam array is converged by the fourth scanning lens 81 is also small, so that the optical field cross sections of the parallel light beams on the back focal plane of the fourth scanning lens 81 are almost coincident. The beam array passes through a 4F system consisting of a fifth lens 82, a second plane mirror 83 and a sixth lens 84, and the image of the back focal plane of the fourth scanning lens 81 is conjugated to the back focal plane of the sixth lens 84. The central axis of the first reflective spatial light modulator 85 is located on the back focal plane of the sixth lens 84, and the reflective surface of the spatial light modulator 85 and the back focal plane of the sixth lens 84 form an angle smaller than 10 °. The spatial light modulator 85 may perform similar light field shaping on each parallel beam in the excitation beam array and reflect the shaped beam array into a 4F system consisting of a seventh lens 86, a third plane mirror 87 and an eighth lens 88.
The suppressor beam array output by the fourth optical fiber array 89 is converged into a set of parallel beams whose optical axes are not parallel to each other via the fifth scanning lens 90, and the optical axes of the set of parallel beams each pass through the back focus of the fifth scanning lens 90. The beam array passes through a 4F system consisting of a ninth lens 91 and a tenth lens 92, and conjugates an image of the back focal plane of the fifth scanning lens 90 to the back focal plane of the tenth lens 92. The central axis of the second reflective spatial light modulator 93 is located on the back focal plane of the tenth lens 92, and an included angle smaller than 10 ° exists between the reflective surface of the spatial light modulator 93 and the back focal plane of the tenth lens 92. The spatial light modulator 93 may modulate each parallel light in the excitation beam array into a similar vortex light and reflect the modulated annular beam array into a 4F system consisting of an eleventh lens 94, a fourth plane mirror 95, and a twelfth lens 96.
The modulated excitation light beam array and the modulated inhibition light beam array are combined through the second half-reflecting half-transmitting mirror 97, the combined light beam array passes through the sixth scanning lens 98 and the second field lens 99, images on the rear focal plane of the eighth lens 88 and the rear focal plane of the twelfth lens 96 are simultaneously conjugated to the entrance pupil plane of the second microscope objective 100, and the combined light beam array is focused into a light field lattice required by the parallel super-resolution direct writing type photoetching through the second microscope objective 100.
The computer control unit 63 controls the second high-precision three-dimensional displacement table 101 to move three-dimensionally, and the computer control unit 63 is matched to control the on-off of the optical fiber acousto-optic modulators 16-31 and 47-62 in real time, so that the parallel super-resolution direct writing of any point in the photoresist sample pool can be realized.
The fibers in the first and second fiber arrays 64, 70, 80, and 89 have the same numerical aperture and similar output mode field diameters for their respective input light sources (excitation and suppression sources). The lens group for modulating the optical field array output by the optical fiber array needs to be specially designed to realize the functions of eliminating dispersion, eliminating field curvature and the like. And finally, realizing that: the focal points of the light beams of the excitation light array after being focused by the last lens (the first micro objective lens 78 in the transmission system or the second micro objective lens 100 in the reflection system) in the system are positioned in the same plane, and the relative position of each focal spot on the focal plane is in an equal proportional reduction relation with the relative position of each excitation light beam when the optical fiber array emits light; the annular focal spot of the light beam of the suppression light array after being focused by the last lens (the first microscope objective 78 in the transmission system or the second microscope objective 100 in the reflection system) in the system is positioned in the same plane, the focal plane of the suppression light array is the same as or very close to the focal plane of the excitation light array, and on the focal plane of the excitation light, most of the peripheral area of the Gaussian spot of each excitation light is covered by the corresponding suppression light annular spot.
As shown in fig. 4, the left side is a focal spot distribution diagram of 5 excitation light beams arranged in a vertical row at equal intervals on the system exit focal plane, the middle is an annular spot distribution diagram of 5 suppression light beams arranged in a vertical row at equal intervals on the excitation light focal plane corresponding to the focal spot distribution diagram, and the right side is a schematic diagram of effective spots actually initiating photo-polymerization of the photoresist under the combined action of the excitation light and the suppression light.
In the photoetching process, the computer control unit 63 controls the movement of the high-precision three-dimensional displacement table, and 5 effective light spots which actually initiate the photopolymerization of the photoresist move in the photoresist sample pool at the same time. And the computer controls the on-off of five paths of exciting lights and corresponding inhibiting lights in real time through the optical fiber optical switch array so as to control the on-off of any light spot in 5 effective light spots actually triggering photo-polymerization of the photoresist in the moving process of the high-precision three-dimensional displacement table, and the 5-channel parallel super-resolution direct writing type photoetching can be realized. The bare optical fiber with the cladding diameter of 125 microns is accurately placed in a special optical fiber positioning die according to the requirement, and the output end face of the optical fiber array is cut and ground, so that the output end face of each optical fiber in the array is positioned on the same plane. The minimum step length of three-direction displacement of the three-dimensional displacement platform is in the nanometer or sub-nanometer magnitude. The extinction ratio of each optical switch in the optical switch array is not less than 50dB, and the maximum modulation frequency of the optical switch modulation is not less than 1 KHz.
In an actual application system, by increasing the number of optical fibers in the optical fiber array, parallel direct writing of more channels can be realized, and the running speed of the system is further improved.
Claims (10)
1. A multi-channel parallel super-resolution direct-writing lithography system based on an optical fiber array is characterized by comprising an excitation light source, a suppression light source, a multi-channel light splitting unit, two groups of optical fiber arrays, an optical switch array compatible with the optical fiber arrays, a spatial light modulation unit for modulating an optical field output by the optical fiber arrays, a three-dimensional displacement table, a computer control unit and the like. And the three-dimensional displacement platform carries a photoresist sample pool.
Exciting light emitted by an exciting light source and inhibiting light emitted by an inhibiting light source respectively pass through the multi-channel light splitting unit, the optical switch array, the optical fiber array and the spatial light modulation unit in sequence and finally reach the photoresist sample cell. The exciting light emitted by the exciting light source initiates photopolymerization of the photoresist in a focusing area of the exciting light; and inhibiting the photoresist in the irradiation range from photopolymerization by inhibiting the inhibiting light emitted by the light source.
The computer control unit respectively controls the on-off of the optical switch array connected with the optical fiber array and the three-dimensional displacement table.
The spatial light modulation unit consists of a plurality of groups of optical lenses and other optical devices, and has the functions of:
firstly, modulating an output light field of an inhibition optical fiber array into a vortex light beam array with annular light field distribution characteristics, and modulating an output light field of an excitation optical fiber array into a light beam array with Gaussian light field distribution characteristics;
secondly, combining the modulated inhibition light and the excitation light beam array and ensuring that each excitation light is strictly coaxial with one inhibition light;
thirdly, converging the total light field in the photoresist sample pool, enabling the focused focal spots of the exciting light beam array to be located on the same focal plane, enabling the size of the focal spot of each exciting light on the focal plane to reach a diffraction limit, and enabling the annular focal spot of the inhibiting light on the focal plane to cover a partial peripheral area of the Gaussian focal spot of the exciting light.
2. The multi-channel parallel super-resolution direct-writing lithography system based on the optical fiber array according to claim 1, wherein the multi-channel light splitting unit is composed of a spatial light splitter, an optical fiber port coupler for coupling spatial light into the optical fiber, and an optical fiber coupler. The multi-channel light splitting unit equally divides the laser beam emitted by the single light source into a plurality of parts with equal power, and the parts are respectively used as the input of each optical fiber in the optical fiber array.
3. The multi-channel parallel super-resolution direct-writing lithography system based on the optical fiber array according to claim 2, wherein the spatial light splitter is a half-wave plate and a polarization beam splitter.
4. The optical fiber array-based multi-channel parallel super-resolution direct-writing lithography system according to claim 1, wherein each optical switch of the optical switch array independently controls the on/off of a single optical fiber in the optical fiber array.
5. The multi-channel parallel super-resolution direct-writing lithography system based on the optical fiber array according to claim 1, wherein the three-dimensional displacement stage is used for controlling the displacement of the photoresist sample cell in the x, y and z directions, and in cooperation with the optical switch array, the excitation beam focal spot is generated at a specific spatial position in the photoresist sample cell and causes the photopolymerization of the photoresist at the specific spatial position.
6. The system of claim 1, wherein the fiber array is composed of a set of optical fibers with identical characteristic parameters. For an input light source, the optical fibers in the optical fiber array only support the output of a fundamental mode, and the divergence angle of the emergent light field of each optical fiber in the two groups of optical fiber arrays is equal to the diameter of the mode field.
7. The optical fiber array-based multi-channel parallel super-resolution direct-writing lithography system according to claim 1, wherein the optical fiber array is arranged in a form of a row or a matrix which is closely arranged.
8. The multi-channel parallel super-resolution direct-writing lithography system based on the optical fiber array according to claim 1, wherein the extinction ratio of each optical switch in the optical switch array is not less than 50dB, and the maximum modulation frequency of the optical switch modulation is not less than 1 KHz.
9. The multi-channel parallel super-resolution direct-write lithography system based on the optical fiber array according to claim 1, wherein the optical switch array is implemented by an acousto-optic modulator or an electro-optic modulator integrated in the optical fiber.
10. The multi-channel parallel super-resolution direct-writing lithography system based on the optical fiber array according to claim 1, wherein the minimum step size of the three-direction displacement of the three-dimensional displacement stage is in the nanometer or sub-nanometer order.
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101661122A (en) * | 2008-08-28 | 2010-03-03 | 上海华虹Nec电子有限公司 | Optical fibre array-based programmable aperture and using method thereof |
EP2876498A1 (en) * | 2013-11-22 | 2015-05-27 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
WO2017016362A1 (en) * | 2015-07-27 | 2017-02-02 | 中国科学院理化技术研究所 | Maskless photolithographic system in cooperative working mode for cross-scale structure |
CN110955119A (en) * | 2019-12-03 | 2020-04-03 | 浙江大学 | Vortex light far-field super-resolution repeated photoetching method |
CN112363322A (en) * | 2020-10-12 | 2021-02-12 | 之江实验室 | Coaxial super-resolution focal spot array generating device for laser direct writing |
-
2021
- 2021-04-21 CN CN202110428517.0A patent/CN113189848B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101661122A (en) * | 2008-08-28 | 2010-03-03 | 上海华虹Nec电子有限公司 | Optical fibre array-based programmable aperture and using method thereof |
EP2876498A1 (en) * | 2013-11-22 | 2015-05-27 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
WO2017016362A1 (en) * | 2015-07-27 | 2017-02-02 | 中国科学院理化技术研究所 | Maskless photolithographic system in cooperative working mode for cross-scale structure |
CN110955119A (en) * | 2019-12-03 | 2020-04-03 | 浙江大学 | Vortex light far-field super-resolution repeated photoetching method |
CN112363322A (en) * | 2020-10-12 | 2021-02-12 | 之江实验室 | Coaxial super-resolution focal spot array generating device for laser direct writing |
Non-Patent Citations (1)
Title |
---|
王凯歌;张琛;王爽;赵伟;冯晓强;孙聃;李红福;范连斌;白晋涛;: "基于连续激光的纳米结构研制", 应用光学, no. 02, pages 20 - 28 * |
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WO2023070991A1 (en) * | 2021-10-25 | 2023-05-04 | 之江实验室 | Multi-channel parallel super-resolution laser direct writing system |
WO2023155492A1 (en) * | 2022-02-18 | 2023-08-24 | 西湖大学 | Optical fiber bundle for lithography and lithography machine |
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WO2023155491A1 (en) * | 2022-02-18 | 2023-08-24 | 西湖大学 | Photoetching machine with optical fiber arrays |
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CN114488715A (en) * | 2022-02-18 | 2022-05-13 | 西湖大学 | Optical fiber array photoetching machine |
WO2024007501A1 (en) * | 2022-07-08 | 2024-01-11 | 西湖大学 | Acousto-optic scanning super-resolution optical fiber lithography machine |
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