CN114488716A - Optical fiber bundle for photoetching and photoetching machine - Google Patents
Optical fiber bundle for photoetching and photoetching machine Download PDFInfo
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- CN114488716A CN114488716A CN202210152726.1A CN202210152726A CN114488716A CN 114488716 A CN114488716 A CN 114488716A CN 202210152726 A CN202210152726 A CN 202210152726A CN 114488716 A CN114488716 A CN 114488716A
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- 239000013307 optical fiber Substances 0.000 title claims abstract description 129
- 238000001259 photo etching Methods 0.000 title abstract description 23
- 238000001459 lithography Methods 0.000 claims abstract description 81
- 238000005253 cladding Methods 0.000 claims abstract description 30
- 239000000835 fiber Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 11
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims 2
- 230000005284 excitation Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 12
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The embodiment of the disclosure provides an optical fiber bundle for lithography and a lithography machine, wherein the optical fiber bundle for lithography can at least receive an exposure Gaussian beam and a de-excitation Gaussian beam with different wavelengths, and at least comprises a lithography optical fiber, the lithography optical fiber comprises an optical fiber core for transmitting a light beam, an optical fiber cladding is arranged outside the optical fiber core in a surrounding manner, a spiral phase structure is arranged at an incident end of the optical fiber cladding, the spiral phase structure is used for converting the de-excitation Gaussian beam into a doughnut-shaped structured light beam, and a lens structure is arranged outside an emergent end of the optical fiber cladding. The embodiment of the disclosure can directly transmit the exposure light energy from the light source to the surface of the photoresist without a lens and a lens group, and the system is easy to install, small in occupied space and low in cost and maintenance cost; the simultaneous and coaxial transmission of at least two beams of light with different wavelengths can be realized by utilizing a single optical fiber, and the technical difficulty of adjusting the space lens group in the double-beam photoetching technology is greatly reduced.
Description
Technical Field
The embodiment of the disclosure relates to the technical field of photoetching, in particular to an optical fiber bundle for realizing super-resolution photoetching based on optical fibers and a photoetching machine.
Background
The photolithography technique is to irradiate a photoresist (i.e., a photoresist) coated on the surface of a wafer or a sample with photons of violet light or ultraviolet light, so that the molecular size of the photoresist changes to obtain the solubility in a specific solvent to generate a certain contrast, and further to develop the selectively exposed photoresist coated on the surface of the wafer/sample with the solvent to form a pattern.
Photoetching is a core process technology for chip production, and the minimum line width obtained in exposed photoresist is the most important index of a photoetching machine and the judgment basis of the advanced degree of a chip production line. In the most advanced chip production line, 1 or more lithography machines with different lithography precision are respectively configured in the transistor manufacturing process (front process) and the interconnection process (back process) between transistors according to the integration level of transistors and the wiring requirements of chips.
The lithography machines are divided into two categories according to the pattern forming mode on the photoresist, wherein the first category of lithography machines forms a high fidelity image with a mask plate pattern on the photoresist after light spots with uniform intensity distribution pass through a lithography mask plate with transparent and opaque region patterns. Such lithography machines are widely used in semiconductor manufacturing lines; the second type of lithography machine is to scan a region to be exposed on a photosensitive adhesive by using a focused beam of light or laser, or to realize exposure on the photosensitive adhesive after forming a pattern with contrast in space by using a spatial light modulator to modulate light intensity of uniform light spots in regions.
The two types of photoetching machines are designed by adopting a free space optical structure, namely, in the process that light emitted from a light source reaches the surface of a photoresist, the light is exposed in air or vacuum, in the process of transmitting the light, a plurality of lenses and a plurality of lenses are needed to form a lens group, various focusing and intensity homogenization are carried out on the light, various optical path differences, chromatic aberration, spherical aberration and the like are eliminated, and the lens group has the advantages of large processing and assembling technical difficulty, high cost, maintenance requirement, and inconvenient installation and debugging.
Disclosure of Invention
In order to solve the above problems, it is therefore an object of the embodiments of the present disclosure to provide an optical fiber bundle for lithography and a lithography machine, which can directly transmit lithography light energy from a light source to a photoresist to achieve high-precision lithography.
The disclosure provides an optical fiber bundle for lithography, which can at least receive an exposure gaussian beam and a de-excitation gaussian beam with different wavelengths, and at least comprises a lithography optical fiber, wherein the lithography optical fiber comprises an optical fiber core for transmitting a light beam, an optical fiber cladding is arranged outside the optical fiber core in a surrounding manner, a spiral phase structure is arranged at an incident end of the optical fiber core, the spiral phase structure is used for converting the de-excitation gaussian beam into a doughnut-shaped structured light beam, and a lens structure is arranged outside an emergent end of the optical fiber core.
In some embodiments, the exposure gaussian beam is an ultraviolet light and the de-excitation gaussian beam is a laser beam.
In some embodiments, the fiber core is made of doped silica or CaF2 or doped CaF2 and the fiber cladding is made of silica or CaF2 material.
In some embodiments, the diameter of the optical fiber core is between 1um and 10um, the outer diameter of the optical fiber cladding is between 15um-100um, and the optical refractive index of the optical fiber cladding and the optical fiber core have a difference, the difference being between 0.01 and 0.2.
In some embodiments, the spiral phase structure employs a spiral phase plate, and the spiral phase plate having different etching depths is disposed along a celestial angle direction of an end face of the fiber cladding on an axis of the fiber core.
In some embodiments, the helical phase structure employs a super-surface structure that satisfies helical phase requirements and achieves focus at the exposure wavelength.
In some embodiments, the lens structure has an arcuate convex structure with a focal plane on an outer side of the lens structure, the lens structure for causing the exposure gaussian beam to form a highly focused gaussian beam spot at the focal plane.
In some embodiments, the lens structure is a fiber lens formed on an end face of the fiber core or a super-surface lens formed on an end face of the fiber cladding.
In some embodiments, when the optical fiber bundle for lithography includes a plurality of the optical fibers for lithography, the helical phase structures and the lens structures in all the optical fibers for lithography respectively form an array.
The present disclosure also provides an optical fiber lithography machine, which adopts the optical fiber lithography bundle according to any one of the above technical solutions.
The embodiment of the disclosure can realize the light for optical fiber transmission lithography between the light source and the surface of the photoresist, can directly transmit the exposure light energy from the light source to the surface of the photoresist through the optical fiber, does not need a lens and a lens group, is easy to install, occupies small space, and reduces the cost and the maintenance cost; the simultaneous and coaxial transmission of at least two light beams with different wavelengths can be realized by utilizing a single optical fiber, and the technical difficulty of adjusting the lens group in the double-beam lithography technology is greatly reduced. In addition, the phase structure of the end face of the optical fiber is utilized to convert the de-excited Gaussian beam into the doughnut-shaped structured light, and the super-resolution lithography of 20 nanometers or even 10nm level can be realized by utilizing the common ultraviolet light through the STED lithography technology.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and for those skilled in the art, other drawings may be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a lithographic optical fiber in a lithographic optical fiber bundle according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a photolithographic optical fiber according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a spiral phase plate in a lithographic optical fiber according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a super-surface structure in a lithographic optical fiber according to an embodiment of the disclosure.
Detailed Description
Various aspects and features of the disclosure are described herein with reference to the drawings.
It will be understood that various modifications may be made to the embodiments of the present application. Accordingly, the foregoing description should not be considered as limiting, but merely as exemplifications of embodiments. Other modifications will occur to those skilled in the art within the scope and spirit of the disclosure.
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the disclosure and, together with a general description of the disclosure given above, and the detailed description of the embodiments given below, serve to explain the principles of the disclosure.
These and other characteristics of the present disclosure will become apparent from the following description of preferred forms of embodiment, given as non-limiting examples, with reference to the attached drawings.
It should also be understood that, although the present disclosure has been described with reference to some specific examples, a person of skill in the art shall certainly be able to achieve many other equivalent forms of the disclosure, having the characteristics as set forth in the claims and hence all coming within the field of protection defined thereby. The above and other aspects, features and advantages of the present disclosure will become more apparent in view of the following detailed description when taken in conjunction with the accompanying drawings.
Specific embodiments of the present disclosure are described hereinafter with reference to the accompanying drawings; however, it is to be understood that the disclosed embodiments are merely exemplary of the disclosure that may be embodied in various forms. Well-known and/or repeated functions and structures have not been described in detail so as not to obscure the present disclosure with unnecessary or unnecessary detail. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously employ the present disclosure in virtually any appropriately detailed structure.
The specification may use the phrases "in one embodiment," "in another embodiment," "in yet another embodiment," or "in other embodiments," which may each refer to one or more of the same or different embodiments in accordance with the disclosure.
The embodiment of the disclosure relates to a lithography optical fiber bundle capable of realizing super-resolution, which belongs to a key component of an optical fiber lithography machine, and the lithography optical fiber bundle can directly transmit a light beam for lithography from a light emitting source to the surface of a photoresist needing exposure so as to facilitate later-stage lithography. The optical fiber bundle for lithography comprises at least one lithography optical fiber and also comprises a plurality of lithography optical fibers, and each lithography optical fiber can be used for receiving at least two Gaussian beams with different wavelengths which are subjected to space optical coupling and transmitting the Gaussian beams to the surface of photoresist. As shown in fig. 1, the light beam incident on each of the lithography fibers may include an exposure gaussian beam 11 and a de-excitation gaussian beam 12; wherein, the exposure gaussian beam 11 is mainly used for the later exposure operation, and may be a common uv light, the wavelength of the uv light here may be, for example, in the range of 193-405nm, preferably in the range of 355-405 nm, the de-excitation gaussian beam 12 is a coherent light, and may be, for example, a laser beam, the wavelength of the de-excitation gaussian beam 12 here may be, for example, in the range of 550-1500nm, although the types and wavelengths of the two gaussian beams are not limited thereto.
The structure of each photoetching optical fiber is shown in fig. 1 and fig. 2, the photoetching optical fiber comprises an optical fiber core 22 for transmitting light beams, and an optical fiber cladding 21 is arranged on the outer side of the optical fiber core 22 in a surrounding manner; the fiber core 22 and the fiber cladding 21 may here be made of any suitable material having a small absorption coefficient for light beams in the wavelength range of 193nm-2um, for example. The optical fiber core 22 may be made of a doped silica material, preferably, the optical fiber core 22 is made of CaF2 or doped CaF2, and the optical fiber cladding 21 may be made of an undoped silica material, preferably, the optical fiber cladding 21 is made of silica or CaF 2.
Wherein, in order to ensure the transmission of two Gaussian beams, the diameter of the optical fiber core 22 is between 0.5um and 10um, and the outer diameter of the optical fiber cladding 21 is between 15um and 100 um. The fiber core 22 here is capable of realizing a single mode propagation simultaneously for the wavelength of the exposure gaussian beam 11 for exposure and the wavelength of the de-excitation gaussian beam 12 or at least for the exposure gaussian beam 11. Furthermore, the optical refractive index of said optical fiber cladding 21 and said optical fiber core 22 have a difference, in particular said difference between the optical refractive index of said optical fiber cladding 21 and said optical refractive index of said optical fiber core 22 is between 0.01 and 0.2, to facilitate the transmission of a gaussian light beam in said optical fiber core 22.
Further, a helical phase structure 23 is provided at the entrance end of the optical fiber core 22, the function of the helical phase structure 23 being such that the doughnut shape of the de-excitation gaussian beam 12 at the de-excitation light wavelength is converted by the helical phase structure 23 into a doughnut-shaped structured light beam 14, while the exposure gaussian beam 11 for lithography can remain transmitted to the photoresist surface in a gaussian beam.
The helical phase structure 23 herein may be fabricated using micro-nm processing techniques; the spiral phase structure 23 may be in the form of a spiral phase plate, specifically, a spiral phase plate with different etching depths may be disposed on the axis of the optical fiber core 22 along the celestial angle direction of the end surface of the optical fiber cladding 21, as shown in fig. 3, where the spiral phase plate may be made by FIB or other processing techniques, specifically, several different sectors may be formed on the incident end position of the optical fiber cladding 21, that is, the end surface of the optical fiber core 22 along the axis direction, and the material of the optical fiber core 22 is etched at different heights in each sector, so as to form a spiral structure; of course, the spiral phase structure 23 may also be a super-surface structure processed at the incident end position of the optical fiber cladding 21 to satisfy the spiral phase requirement and achieve focusing at the exposure wavelength at the end face of the optical fiber core 22, and specifically, as shown in fig. 4, several different sectors may be formed on the end face of the optical fiber core 22, and the surface of the optical fiber core 22 in each sector has a different two-dimensional super-surface structure. Here, the de-excitation gaussian beam 12, e.g. a laser, can be directly converted into a doughnut-shaped structured light beam 14, either in the form of a spiral phase plate or in the form of a two-dimensional super-surface structure, so that the exposure gaussian beam 11 can directly reach the surface of the photoresist.
Further, a lens structure 24 is disposed outside the exit end of the fiber cladding 21, the lens structure 24 may have an arc-shaped convex structure, and a focal plane 25 is disposed outside the lens structure 24, and the lens structure 24 is configured to enable the exposure gaussian beam 11 to form a highly focused gaussian beam spot of the lithography beam on the focal plane 25 of the lens structure 24. The lens structure 24 here may be, for example, a focusing lens for fiber exposure; specifically, the lens structure 24 may be a fiber lens formed on the end surface of the optical fiber core 22 by using a chemical etching method, or may be a super-surface lens formed on the end surface of the optical fiber cladding 21 by using, for example, a micro-nano processing technique.
Since the bundle of optical fibers for lithography is an aggregate of the plurality of optical fibers for lithography, when the bundle of optical fibers for lithography includes the plurality of optical fibers for lithography, the helical phase structures 23 in all the optical fibers for lithography constitute one array, and the lens structures 24 in all the optical fibers for lithography constitute one array, it is possible to perform multi-beam lithography using the bundle of optical fibers for lithography formed of the plurality of optical fibers for lithography, and it is possible to further improve the rate of exposure.
When two Gaussian beams with different wavelengths are coupled into the photoetching optical fiber through spatial optical coupling, the spiral phase structure 23 on the end face of the optical fiber core 22 converts the Gaussian beam of the de-excitation Gaussian beam 12 into the doughnut-shaped structured light beam 14, the doughnut-shaped de-excitation Gaussian beam 12 and the exposure Gaussian beam 11 are coaxially transmitted to the other end face of the optical fiber core 22 through the optical fiber core 22, and the lens structure 24 on the other end face forms the exposure Gaussian beam 11 into a focused photoetching light beam 13 on the focal plane 25 of the lens structure. And the doughnut-shaped structured light beam 14 and the focused lithographic beam 13 on the focal plane 25 remain coincident with the optical axis.
Thus, when a photoresist-coated wafer is placed on the focal plane 25, controlling the size of the sweet-centered hollow structures in the doughnut of the structured light beam 14 formed by the de-excitation gaussian beam 12 can be achieved by adjusting the exposure time and energy of the focused lithographic beam 13, and by adjusting the intensity of the structured light beam 14. Specifically, when the intensity of the de-excitation gaussian beam 12 can ensure that the effective de-excitation diameter of the doughnut-shaped structure is reduced to limit the size of the lithography beam 13 that can be exposed, the diffraction limit is broken through to achieve the effect of super-resolution lithography.
In a specific embodiment, the photolithographic fiber of the embodiments of the present disclosure can be made by: firstly, selecting suitable materials with small absorption coefficient in 193nm-2um wavelength range, such as SiO2 and CaF2, and making the optical fiber core 22 and the optical fiber cladding 21 by doping technology and fiber preparation technology, the photolithographic optical fiber can form a single-mode optical fiber meeting 193nm-2um wavelength range, especially the single-mode optical fiber can realize single-mode transmission to the de-excitation Gaussian beam 12 and can convert the de-excitation Gaussian beam 12 into the structural light beam 14 in the shape of a doughnut with maximum efficiency.
A spiral phase plate is formed on the end face of the optical fiber core 22 at the position of the incident end of the optical fiber cladding 21 by adopting a micro-nano processing technology, and the spiral phase plate converts a gaussian beam into a doughnut-shaped structured light beam 14 at the wavelength of the de-excitation gaussian beam 12, so that the exposure gaussian beam 11 such as ultraviolet light with a photoetching wavelength is still transmitted on the optical fiber core 22 as a gaussian spot after passing through the spiral phase plate and finally forms a photoetching beam 13; further, the lens structure 24 such as a fiber lens is prepared on the end surface of the optical fiber core 22 at the position of the exit end of the optical fiber cladding 21 by using a chemical etching method or the like, and the lens structure 24 can effectively focus the lithography beam of the gaussian shape on the focal plane 25 thereof without changing the structure of the structured light beam 14 forming the doughnut shape on the focal plane 25, so that the super-resolution lithography function is formed on the lithography glue on the focal plane 15 by using at least the structured light beam 14 formed by the de-excitation gaussian beam 12 and the exposure gaussian beam 11 such as the ultraviolet lithography light.
Another embodiment of the present disclosure relates to an optical fiber lithography machine, which employs the optical fiber lithography bundle according to any of the above technical solutions, wherein the optical fiber lithography bundle can have a function of focusing a lithography beam in the optical fiber lithography machine.
The embodiment of the disclosure can realize the super-resolution lithography on the focal plane by converting the Gaussian beam into the doughnut-shaped structured light beam for the super-resolution lithography and the Gaussian-shaped lithography beam for full focusing on the focal plane of the lithography fiber. Theoretically, the 365nm photoetching light beam can realize the photoetching of the line width smaller than 10nm, the resolution ratio of the photoetching is higher than that of an immersion type DUV photoetching machine, but the cost of a light source and an optical system is more economic than that of the DUV photoetching machine and the existing EUV photoetching machine. In addition, the optical fiber bundle for lithography of the embodiment of the disclosure does not need to be provided with a special lens or a lens group, is easy to install, occupies small space, and reduces the cost and the maintenance cost; for example, 20nm or even 10nm level lithography can be achieved by STED lithography, enabling alternative DUV or even EUV lithography.
The foregoing description is only exemplary of the preferred embodiments of the disclosure and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the disclosure herein is not limited to the particular combination of features described above, but also encompasses other embodiments in which any combination of the features described above or their equivalents does not depart from the spirit of the disclosure. For example, the above features and (but not limited to) the features disclosed in this disclosure having similar functions are replaced with each other to form the technical solution.
Further, while operations are depicted in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order. Under certain circumstances, multitasking and parallel processing may be advantageous. Likewise, while several specific implementation details are included in the above discussion, these should not be construed as limitations on the scope of the disclosure. Certain features that are described in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination.
Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing the claims.
While the present disclosure has been described in detail with reference to the embodiments, the present disclosure is not limited to the specific embodiments, and those skilled in the art can make various modifications and alterations based on the concept of the present disclosure, and the modifications and alterations should fall within the scope of the present disclosure as claimed.
Claims (10)
1. An optical fiber bundle for lithography, which can at least receive an exposure Gaussian beam and a de-excitation Gaussian beam with different wavelengths, at least comprises a lithography optical fiber, wherein the lithography optical fiber comprises an optical fiber core for transmitting a light beam, and an optical fiber cladding is arranged outside the optical fiber core in a surrounding manner.
2. The optical fiber bundle for lithography according to claim 1, wherein the exposure gaussian beam is an ultraviolet light and the excitation gaussian beam is a laser beam.
3. The optical fiber bundle for lithography according to claim 1, wherein the optical fiber core is doped quartz or CaF2Or doped CaF2The optical fiber cladding is made of quartz or CaF2Is made of the material.
4. The optical fiber bundle for lithography according to claim 1, wherein the diameter of the optical fiber core is between 1um and 10um, the outer diameter of the optical fiber cladding is between 15um and 100um, and the optical refractive index of the optical fiber cladding and the optical fiber core have a difference between 0.01 and 0.2.
5. The optical fiber bundle for lithography according to claim 1, wherein the helical phase structure employs a helical phase plate, and the helical phase plate having different etching depths is disposed along a celestial angle direction of an end surface of the fiber cladding on an axis of the fiber core.
6. The bundle according to claim 1, wherein the spiral phase structure is a super surface structure that satisfies the spiral phase requirement and that achieves focusing at the exposure wavelength.
7. The optical fiber bundle for lithography according to claim 1, wherein said lens structure has an arc-shaped convex structure with a focal plane on the outside of said lens structure, said lens structure being for making said exposure gaussian beam form a highly focused gaussian beam spot on said focal plane.
8. The optical fiber bundle for lithography according to claim 7, wherein the lens structure is a fiber lens formed on an end face of the optical fiber core or a super-surface lens formed on an end face of the optical fiber cladding.
9. The bundle of optical fibers for lithography according to claim 1, wherein when the bundle of optical fibers for lithography includes a plurality of the optical fibers for lithography, the helical phase structures and the lens structures in all the optical fibers for lithography constitute an array, respectively.
10. An optical fiber lithography machine employing the optical fiber lithography bundle of any one of claims 1-9.
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PCT/CN2022/130786 WO2023155492A1 (en) | 2022-02-18 | 2022-11-09 | Optical fiber bundle for lithography and lithography machine |
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WO2023155492A1 (en) * | 2022-02-18 | 2023-08-24 | 西湖大学 | Optical fiber bundle for lithography and lithography machine |
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CN114488715B (en) * | 2022-02-18 | 2023-09-29 | 西湖大学 | Optical fiber array photoetching machine |
CN114488714A (en) * | 2022-02-18 | 2022-05-13 | 西湖大学 | Optical fiber array photoetching machine |
CN114488716B (en) * | 2022-02-18 | 2024-04-05 | 西湖大学 | Optical fiber bundle for lithography and lithography machine |
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2022
- 2022-02-18 CN CN202210152726.1A patent/CN114488716B/en active Active
- 2022-11-09 WO PCT/CN2022/130786 patent/WO2023155492A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108680548A (en) * | 2018-05-16 | 2018-10-19 | 华中科技大学 | A kind of full fiber type super-resolution imaging method and device |
CN211669453U (en) * | 2020-03-05 | 2020-10-13 | 深圳大学 | Focusing vortex light generator |
CN113189848A (en) * | 2021-04-21 | 2021-07-30 | 之江实验室 | Multichannel parallel super-resolution direct-writing lithography system based on optical fiber array |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023155492A1 (en) * | 2022-02-18 | 2023-08-24 | 西湖大学 | Optical fiber bundle for lithography and lithography machine |
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