CN114488713A - Photoetching machine and physical photoetching method - Google Patents
Photoetching machine and physical photoetching method Download PDFInfo
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- CN114488713A CN114488713A CN202210151923.1A CN202210151923A CN114488713A CN 114488713 A CN114488713 A CN 114488713A CN 202210151923 A CN202210151923 A CN 202210151923A CN 114488713 A CN114488713 A CN 114488713A
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
Abstract
The embodiment of the disclosure provides a photoetching machine and a physical photoetching method, wherein the photoetching machine can realize physical photoetching on a wafer coated with a physical photoresist, and the photoetching machine comprises a control device, a photoetching source, a beam pulse modulator, a beam focusing device, a beam scanning device and a moving workpiece table, wherein the control device is used for receiving graphic information needing exposure and generating a modulation signal for controlling the beam pulse modulator to output the optimal pulse width of an exposure beam at an exposure position, a beam scanning signal for sequentially deflecting the exposure beam to the exposure position and a movement control signal for controlling the moving workpiece table on the basis of photoetching data corresponding to the graphic. According to the embodiment of the disclosure, the physical photoetching material can be used for absorbing energy and then carrying out sublimation phase change from solid to gas, and meanwhile, the processes of exposure, development and fixation are realized, the process is short, so that specially-arranged development and fixation procedures are not needed, and the photoetching process is environment-friendly.
Description
Technical Field
The present disclosure relates to a chip or integrated circuit manufacturing technology, and more particularly, to a lithography machine and a physical lithography method.
Background
Photolithography is a core process of chip production, and utilizes photons of violet light or ultraviolet light (including UV, DUV and EUV) to irradiate a photoresist (photosensitive resist) coated on the surface of a wafer or a sample, so that the molecular size of the photoresist is changed, and the solubility of the photoresist in a specific solvent generates a certain contrast. The selectively exposed photoresist coated on the wafer/sample surface is developed with the solvent to form a pattern. The photoetching machine is a core device of a chip production line, and the minimum line width obtained after photoresist exposure is the most important index of the photoetching machine and the key parameter of the advancement degree of the chip production line. In a most advanced chip production line, 1 or more lithography machines with different processing precisions are respectively configured in a transistor manufacturing process (front process) and a metal interconnection process (back process) between transistors according to the integration level of transistors and the wiring requirements between chips.
The current photolithography techniques, either ultraviolet lithography or electron beam exposure, utilize energetic beams or electron beams to shear or polymerize molecules of the photoresist, resulting in a large contrast in the dissolution rate of the exposed photoresist and the unexposed photoresist in the solvent. From a physical and chemical point of view, this lithography is a chemical reaction process, which we can refer to as chemical lithography. Such photolithography is characterized by the need to develop and fix the exposed wafer using a solvent after the exposure process is completed. Thus, the process of chemical lithography has at least three steps: exposure, development and fixing as shown in fig. 1. The process is complicated, and the use of an organic or inorganic developer or fixer is disadvantageous in cost control and environment.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide a lithography machine and a physical lithography method to solve the problems in the prior art.
The embodiment of the disclosure provides a lithography machine capable of realizing physical lithography on a wafer coated with physical photoresist, comprising a control device, a lithography source, a beam pulse modulator, a beam focusing device, a beam scanning device and a moving workpiece stage, wherein the control device is used for receiving graphic information needing exposure and generating a modulation signal for controlling the beam pulse modulator to output the optimal pulse width of the exposure beam at an exposure position, a beam scanning signal for deflecting the exposure beam to the exposure position in sequence and a motion control signal for controlling the moving workpiece stage based on lithography data corresponding to the graphic, and the physical photoresist is a material which realizes sublimation after absorbing focused light energy and/or charged particle energy in a vacuum environment.
In some embodiments, the lithographic machine further comprises a vacuum chamber and a vacuum, the lithographic source, the beam pulse modulator, the beam focusing apparatus, the beam scanning apparatus and the moving workpiece stage all being disposed in the vacuum chamber.
In some embodiments, the vacuum device is connected to the vacuum chamber, which includes at least a mechanical pump and a molecular pump, so as to form a vacuum environment of different degrees in the vacuum chamber.
In some embodiments, the lithography machine further comprises an off-gas treatment device for degrading the gas product after sublimation of the physical photoresist into a stable gaseous product via ions or a reaction gas.
In some embodiments, the lithography source is for emitting a lithography beam, the lithography beam being a lithography beam or a charged particle beam.
In some embodiments, where the lithographic beam is a lithographic beam, the beam modulator is at least one of an acousto-optic modulator, an electro-optic modulator, a spatial light modulator, a mechanical modulator, the beam modulator being for modulating the lithographic beam to a light pulse width that meets an exposure dose requirement; in case the lithography beam is a charged particle beam, the beam modulator is an electrostatic field beam shutter or an electromagnetic field beam shutter, the beam modulator being adapted to modulate the charged particle beam to a charged particle pulse width that meets exposure dose requirements.
In some embodiments, the beam focusing means is a set of optical lenses in the case where the beam focusing means outputs pulses of light, and is a set of electromagnetic lenses in the case where the beam focusing means outputs pulses of electrically charged particles.
In some embodiments, in the case where the beam focusing device focuses light pulses, the beam scanning device employs an optical scanning device, the optical scanning device being at least one of a mechanical optical scanning device, an acousto-optical scanning device, an electro-optical scanning device, and in the case where the beam focusing device focuses charged particle pulses, the beam scanning device employs a magnetic field scanning system.
In some embodiments, the lithography beam is at least one of an ultraviolet beam, a laser beam, an LED beam, and the charged particle beam is at least one of a Ga ion beam, a He ion beam, an Ar ion beam, and an oxygen ion beam.
The embodiment of the disclosure also provides a physical lithography method, which includes the following steps: arranging the wafer coated with the physical photoresist on a moving workpiece table; generating control signals based on the lithographic layout, the control signals comprising at least a beam modulation signal for controlling the beam pulse modulator, a beam scanning signal for controlling the beam scanning apparatus, and a motion control signal for controlling the motion console; and after the wafer reaches a preset position, realizing physical photoetching based on the control signal.
According to the embodiment of the disclosure, the physical photoetching material can absorb energy and then sublimation phase change from solid to gas is carried out, and photoetching, developing and fixing processes are simultaneously realized.
The material for the physical lithography material of the disclosed embodiment may be an inorganic material such as iodine, an organic material such as naphthalene, PPA, or the like, or Ar, CO2, or the like condensed in a solid state at a low temperature.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic representation of a prior art chemical photolithography process;
FIG. 2 is a schematic illustration of physical photolithography in accordance with an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a lithography machine according to an embodiment of the disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components is omitted from the present disclosure.
Embodiments of the present disclosure relate to a lithography machine and a physical lithography method, which is used herein to implement lithography on a wafer. The physical photoetching method is characterized in that the phase change from solid to gas after the physical photoetching material absorbs energy, namely sublimation, is utilized to simultaneously realize photoetching, developing and fixing processes, namely self-developing photoetching, and the photoetching mechanism is different from the traditional photoetching process based on a chemical principle. The core of the physical photoetching method is that a material which is easy to sublimate after absorbing energy such as light energy, electron beam energy, ion beam energy, heat energy and the like is used as a photoresist, and the physical photoresist is a material which is easy to sublimate, in particular to a solid film material which can generate a sublimation process from solid to gas under a lower temperature (such as lower than 200 ℃) environment and does not generate a solid-liquid melting process. The material is characterized in that the sublimation phase change from solid to gas occurs after absorbing the energy of a photoetching source in certain working temperature and environment.
In the traditional photoetching process, light, electrons or ions are used as an energy source to irradiate the photoresist in the exposure process, and the molecular weight of the photoresist is changed after photons or secondary electrons in a certain energy range generated by the interaction of the electrons and the ions and the molecules of the photoresist are irradiated by the photoresist source. The photoresist is chemically reacted in the photoetching process, and the photoetching process is chemical photoetching. After exposure, the unexposed and exposed photoresist is selectively dissolved by a solvent at different rates by development to obtain a pattern required for exposure. The photoetching, developing and fixing of the chemical photoetching are three different processes, and the process is long; both development and fixing require the use of chemicals and are not environmentally friendly.
The working environment of the physical photoresist used in the physical photolithography method can be atmospheric pressure or vacuum, and the preferred working environment is a vacuum environment. The vacuum degree of the vacuum environment is 10000Pa to 0.001 Pa; the working temperature of the physical photoresist can be normal temperature or low temperature, the low temperature comprises a liquid nitrogen or liquid helium temperature region, the preferred working temperature can be room temperature or higher, and for example, the working temperature is 260K to 373K.
Further, under the preferred working environment and working temperature, the physical photoresist can be inorganic material, such as iodine, or organic material, such as naphthalene and PPA, etc., or based on other solid material which can easily sublimate, especially amorphous solid material.
When the physical photoresist of the embodiment of the disclosure is adopted to realize photoetching: when the energy of ultraviolet light beams or electron beams or ion beams for exposure reaches the physical photoresist and is absorbed by the physical photoresist, the physical photoresist is heated to carry out sublimation phase change, so that the physical photoresist is directly changed into gas, and meanwhile, the exposure, development and fixation processes of photoetching are completed, and finally, photoetching patterns are formed. The physical photoresist used here, whether organic or inorganic, can be sublimated directly from the solid state of the film to the gas state under the action of the lithography beam energy and the electron beam energy in the working temperature and environment, and the pattern is directly formed in the exposure process without additional developing and fixing process steps.
The physical photolithography uses a solid material, such as naphthalene and iodine, which is directly sublimated after absorbing ultraviolet light energy, electron beam energy or ion beam energy, as a photoresist, an exposed portion of which is directly sublimated into gas, and the gas is directly exposed on the photoresist to form a pattern without a subsequent developing and fixing process, as shown in fig. 2. The physical photoetching method does not need developing and fixing processes, simplifies the photoetching process steps, and reduces photoetching cost and environmental hazards due to the fact that developing solution and fixing solution are avoided.
Embodiments of the present disclosure relate to a lithography machine that implements the physical lithography method. The physical photoresist is adopted to realize physical photoetching, as shown in fig. 3, the photoetching machine comprises a control device 1, a photoetching source 2, a beam pulse modulator 3, a beam focusing device 4, a beam scanning device 5 and a moving workpiece table 6, wherein the control device 1 is respectively connected with the photoetching source 2, the beam pulse modulator 3, the beam focusing device 4, the beam scanning device 5 and the moving workpiece table 6.
Specifically, the control device 1 is configured to receive pattern information requiring exposure, and decompose the pattern requiring exposure into a beam modulation signal 11, a beam scanning signal 12, and a motion control signal 13, where an exposure function is synchronously implemented by the beam modulation signal 11, the beam scanning signal 12, and the motion control signal 13. The motion control signal 13 is used for controlling the motion workpiece stage 6 to convey the wafer to the focal plane of the beam focusing device 4 and a designated exposure position, and the beam modulation signal 11 is used for controlling the beam pulse modulator 3 to output the optimal beam pulse width required by the exposure of the position; the beam scanning means 5 sequentially deflect the exposure beams to the positions to be exposed under the control of the beam scanning signal 12.
Said lithographic source 2 is for emitting a lithographic beam, where said lithographic beam may be a lithographic beam such as an ultraviolet beam having a wavelength between 193nm and 405nm, wherein the power of the output of said lithographic source 2 sending said ultraviolet beam is between 1mW and 100W; the lithography beam can also be a laser, LED light, or other beam; furthermore, the lithography beam may be a charged particle beam, such as an electron beam, wherein the charged particle beam may be a positively charged ion beam, such as a Ga ion beam, a He ion beam, an Ar ion beam, etc., or a negatively charged electron beam or ion beam, such as an oxygen ion beam, etc., wherein the charged particle beam is accelerated to a desired energy by an external electric field of 1kV to 100 kV.
The beam modulator 3 may employ corresponding devices according to the difference of the lithography beam emitted by the lithography source 2. For example, if the lithography source 2 emits a lithography beam, the beam modulator 3 may be an acousto-optic modulator, an electro-optic modulator, a spatial light modulator, or a mechanical light modulator, and the beam modulator 3 is used to modulate the lithography beam to a light pulse width that meets the exposure dose requirement.
If the lithography source 2 emits charged particle beams, the beam modulator 3 can be an electrostatic field beam gate or an electromagnetic field beam gate, and the beam modulator 3 is used for controlling the on and off of the charged particle beams on the exposure path to output the charged pulse width required by the exposure optimal dose.
The beam focusing means 4 may be implemented by different means, emitting different lithographic beams depending on the lithographic source 2, or outputting different pulses based on the lithographic beam. For example, if the light pulses are output by the beam focusing device 3, the beam focusing device 4 may be a set of optical lenses, where the optical lenses may be disposed all before the beam scanning device 5, all after the beam scanning device 5, or dispersed before and after the beam scanning device 5, and the beam focusing device 4 is used to focus the optimal exposure light pulses modulated by the beam modulating device 3 and/or scanned by the beam scanning device 5 on the photoresist on the wafer to be exposed on the moving workpiece stage 6.
If the beam focusing device 3 outputs charged particle pulses, the beam focusing device 4 is a set of electromagnetic lenses, which may be disposed entirely before the beam scanning device 5, behind the beam scanning device 5, or dispersed before and behind the beam scanning device 5, and the beam focusing device 4 is used to focus the optimally exposed charged pulses modulated by the beam modulating device 3 and/or scanned by the beam scanning device 5 onto the photoresist on the wafer to be exposed on the moving workpiece stage 6.
The beam scanning means 5 emit different lithographic beams depending on the lithographic source 2 or may be implemented by corresponding means based on the beam focusing means 4 focusing different pulses. For example, if the beam focusing device 4 focuses light pulses, the beam scanning device 5 here employs an optical scanning device, which may be, for example, a mechanical optical scanning device, an acousto-optic scanning device, or an electro-optic scanning device, and the beam scanning device 5 here is configured to position the exposure light pulses focused by the beam focusing device 4 to specified photoresist positions on the wafer to be exposed on the moving workpiece stage 6 based on the beam scanning signal 12 sent by the control device 1;
if the beam focusing device 4 focuses charged particle pulses, the beam scanning device 5 here employs a magnetic field scanning system, and the beam scanning device 5 here is used to position the exposure charged particle pulses focused by the beam focusing device 4 to the designated photoresist positions on the wafer to be exposed on the moving workpiece table 6 based on the beam scanning signal 12 sent by the control device 1.
If the lithography source 2 emits a beam of uv light source, the absorption coefficient of the selected photoresist at the wavelength of the light is large, the beam pulse modulator 2 may be an electro-optical modulator, and the beam scanning device 5 may be an acousto-optical scanning, electro-optical scanning, spatial light modulator, etc. Whatever modulation and scanning means are used, their combination ensures that the light pulse corresponding to the optimum exposure dose resides at the precise location on the wafer where the photoresist needs to be exposed. In order to ensure the smooth sublimation phase change, the moving workpiece table 6 is always in a high vacuum state, and the vacuum degree is between 0.001Pa and 1000 Pa. In order to avoid the thermal influence of the energy absorbed by the photoresist of the exposed part on the unexposed part, the total exposure pulse width at the same exposure position can be divided into a plurality of smaller pulse widths to carry out multiple exposures on the same exposure point, for example, the width reaches the ps or fs magnitude, and the total pulse width is consistent with the optimal exposure dose.
If the lithography source 2 emits a charged particle beam, the beam pulse modulator 3 may be an electrostatic beam shutter, an electromagnetic beam shutter, and the beam scanning system may be an electrostatic or electromagnetic scanning coil. Whatever modulation and scanning means are used, the combination of these is to ensure that the photoresist on the wafer is at the precise location where it is desired to be exposed, where the charged particle pulse corresponding to the optimum exposure dose resides. In order to ensure the smooth sublimation phase change, the moving workpiece table 6 is always in a high vacuum state, and the vacuum degree is between 0.001Pa and 10 Pa. In order to avoid the thermal influence of the energy absorbed by the photoresist on the unexposed part, the charged particles are preferably positive ions, such as Ar, He and Ga particles, or negative particles, such as O particles, and in order to avoid the contamination of the wafer and the charged ion device in the vacuum chamber by the sublimation product, the gas ions, such as Ar, He and O ions, are preferably used.
Further, in order to realize that the physical lithography is performed in a vacuum environment, the lithography machine further comprises a vacuum chamber 7 and a vacuum device 9, wherein the lithography source 2, the beam pulse modulator 3, the beam focusing device 4, the beam scanning device 5 and the moving workpiece stage 6 are all arranged in the vacuum chamber 7. Here, the vacuum device 9 is connected to the vacuum chamber 7, and includes at least a mechanical pump and a molecular pump, so that a vacuum environment of various degrees is formed in the vacuum chamber 7, thereby ensuring a desired degree of vacuum of each portion inside the vacuum chamber 7.
Wherein the vacuum device 9 achieves a high vacuum environment in the vacuum chamber 7 by a mechanical pump and a molecular pump, for example, if the beam scanning device 5 scans a light pulse; if the beam scanning device 5 scans the charged particle pulses, the vacuum device 9 realizes an ultrahigh vacuum environment in the vacuum chamber 7 through a mechanical pump, a molecular pump and an ion pump.
In addition, the lithography machine further comprises an exhaust gas treatment device 8, wherein the exhaust gas treatment device 8 is used for degrading the gas product after the physical photoresist is sublimated into a stable gaseous product through ions or reaction gas, so as to avoid damaging the vacuum device 9 and the environment, and the exhaust gas treatment device 8 can be a sublimation gas degradation device adopting ozone or a sublimation gas treatment device adopting microwave enhancement.
In another embodiment of the present disclosure, the lithography machine according to the embodiment of the present disclosure may implement physical lithography, specifically including the following steps:
and S101, arranging the wafer coated with the physical photoresist on a moving workpiece table.
In this step, a semiconductor wafer or other material (hereinafter, referred to as a wafer) required for research, development and production is subjected to spin coating, glue spraying or other processes, and a physical photoresist with a desired thickness is coated on the surface of the wafer, with or without baking, but with a curing operation, and then loaded on the moving workpiece stage 6. The moving workpiece stage 6 positions the physical photoresist in a focal plane of the beam focusing device 4 by positioning and moving of a Z-axis motor;
s102, generating control signals based on the photoetching layout, wherein the control signals at least comprise a beam modulation signal for controlling a beam pulse modulator, a beam scanning signal for controlling a beam scanning device and a motion control signal for controlling a motion control platform.
In this step, control signals are generated by the control device 1 based on the lithographic layout, the control signals including at least a beam modulation signal for controlling the beam pulse modulator 3, a beam scanning signal for controlling the beam scanning device 5, and a motion control signal for controlling the motion stage 6. The user may design a lithography layout of a chip or a micro-nano system on design software built in the control device 1, or may convert a third-party layout and then introduce the third-party layout into the control device 1.
The control device 1 decomposes the lithography layout into one or more times of lithography data according to the process, specifically, decomposes the data of the wafer requiring the current exposure to generate a beam modulation signal 11 for controlling the beam pulse modulator 3, a beam scanning signal 12 for controlling the beam scanning device 5, and a motion control signal 13 for controlling the motion stage 6. Wherein the beam modulation signal 11 includes at least a voltage signal and a pulse width corresponding to each exposure point and an unnecessary exposure position, and the beam scanning signal 12 includes at least information corresponding to each exposure point and an unnecessary exposure position; the motion control signal 13 at least comprises information of all required exposure and non-required exposure positions on the wafer to meet the process lithography requirements.
And S103, after the wafer reaches a preset position, realizing physical photoetching based on the control signal.
In this step, when the current exposure is performed, that is, after the wafer reaches the predetermined position, the control device 1 performs the physical lithography using the beam modulation signal 11, the beam scanning signal 12, and the motion control signal 13 corresponding to the current exposure. Specifically, after the wafer reaches the focal plane position of the beam focusing device 4, the control device 1 sequentially calls the motion control signal 13 to control the motion of the motion stage 6 to transport the wafer to the initial exposure point, and then continues to call the beam modulation signal 11 and the beam scanning signal 12 to perform point-by-point scanning to complete the lithography of the pattern. In the photoetching process, the photoresist of the exposure part is directly sublimated into gas, and the pattern is directly formed on the photoresist, so that the physical photoetching is completed without subsequent developing and fixing processes.
Finally, after the current physical photoetching is finished, the wafer is directly entered into other process links such as etching or film coating or ion implantation, annealing and the like after exiting the photoetching machine from the moving workpiece table 6.
According to the embodiment of the disclosure, the photoetching material can absorb energy and then sublimate and change phase from solid to gas, so that photoetching, developing and fixing processes are simultaneously realized, and compared with a chemical photoetching method in which photoetching, developing and fixing are respectively carried out as three different steps, the embodiment of the disclosure is a self-developing process, exposure, developing and fixing are simultaneously completed, the process is short, so that specially-arranged developing and fixing procedures are not needed, and the photoetching process is environment-friendly.
The foregoing description is only exemplary of the preferred embodiments of the disclosure and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the disclosure herein is not limited to the particular combination of features described above, but also encompasses other embodiments in which any combination of the features described above or their equivalents does not depart from the spirit of the disclosure. For example, the above features and (but not limited to) the features disclosed in this disclosure having similar functions are replaced with each other to form the technical solution.
Further, while operations are depicted in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order. Under certain circumstances, multitasking and parallel processing may be advantageous. Likewise, while several specific implementation details are included in the above discussion, these should not be construed as limitations on the scope of the disclosure. Certain features that are described in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination.
Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing the claims.
While the present disclosure has been described in detail with reference to the embodiments, the present disclosure is not limited to the specific embodiments, and those skilled in the art can make various modifications and alterations based on the concept of the present disclosure, and the modifications and alterations should fall within the scope of the present disclosure as claimed.
Claims (10)
1. A photoetching machine is capable of realizing physical photoetching on a wafer coated with physical photoresist, and is characterized by comprising a control device, a photoetching source, a beam pulse modulator, a beam focusing device, a beam scanning device and a moving workpiece stage, wherein the control device is used for receiving graphic information needing exposure and generating a modulation signal for controlling the beam pulse modulator to output the optimal pulse width of the exposure beam at the exposure position, a beam scanning signal for sequentially deflecting the exposure beam to the exposure position and a movement control signal for controlling the moving workpiece stage on the basis of photoetching data corresponding to the graphic, and the physical photoresist is a material which can realize sublimation after absorbing focused light energy and/or charged particle energy in a vacuum environment.
2. The lithography machine according to claim 1, further comprising a vacuum chamber and a vacuum device, wherein said lithography source, said beam pulse modulator, said beam focusing device, said beam scanning device and said moving workpiece stage are all disposed in said vacuum chamber.
3. A lithography machine according to claim 2, characterized in that said vacuum means are connected to said vacuum chamber and comprise at least a mechanical pump and a molecular pump, so as to create a vacuum environment of different degrees in said vacuum chamber.
4. The lithography machine according to claim 1, further comprising an exhaust gas treatment device for degrading the gas product after sublimation of the physical photoresist into a stable gaseous product by ions or a reaction gas.
5. The lithography machine according to claim 1, wherein said lithography source is adapted to emit a lithography beam, said lithography beam being a lithography beam or a charged particle beam.
6. The lithography machine according to claim 5, wherein in case the lithography beam is a lithography beam, the beam modulator is at least one of an acousto-optic modulator, an electro-optic modulator, a spatial light modulator, a mechanical modulator, the beam modulator being configured to modulate the lithography beam into a light pulse width that complies with exposure dose requirements; in case the lithography beam is a charged particle beam, the beam modulator is an electrostatic field beam shutter or an electromagnetic field beam shutter, the beam modulator being adapted to modulate the charged particle beam to a charged particle pulse width that meets exposure dose requirements.
7. A lithography machine according to claim 5, wherein the beam focusing device is a set of optical lenses in case of a light pulse output by the beam focusing device and a set of electromagnetic lenses in case of a charged particle pulse output by the beam focusing device.
8. A lithography machine according to claim 5, wherein in case the beam focusing device is focused by light pulses, the beam scanning device employs an optical scanning device, the optical scanning device being at least one of a mechanical optical scanning device, an acousto-optical scanning device, an electro-optical scanning device, in case the beam focusing device is focused by charged particle pulses, the beam scanning device employs a magnetic field scanning system.
9. The lithography machine of claim 1, wherein said lithography beam is at least one of an ultraviolet beam, a laser beam, an LED beam, and said charged particle beam is at least one of a Ga ion beam, a He ion beam, an Ar ion beam, and an oxygen ion beam.
10. A physical lithography method, comprising the steps of:
arranging the wafer coated with the physical photoresist on a moving workpiece table;
generating control signals based on the lithographic layout, the control signals comprising at least a beam modulation signal for controlling the beam pulse modulator, a beam scanning signal for controlling the beam scanning apparatus, and a motion control signal for controlling the motion console;
and after the wafer reaches a preset position, realizing physical photoetching based on the control signal.
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Inventor after: Li Xijun Inventor after: Shao Luqing Inventor before: Li Xijun |