CN114481300A - Czochralski centering calibration system and calibration method for single crystal furnace - Google Patents
Czochralski centering calibration system and calibration method for single crystal furnace Download PDFInfo
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- CN114481300A CN114481300A CN202011258162.7A CN202011258162A CN114481300A CN 114481300 A CN114481300 A CN 114481300A CN 202011258162 A CN202011258162 A CN 202011258162A CN 114481300 A CN114481300 A CN 114481300A
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- 239000013078 crystal Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 82
- 239000010959 steel Substances 0.000 claims abstract description 82
- 239000010453 quartz Substances 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000012544 monitoring process Methods 0.000 claims abstract description 39
- 230000000087 stabilizing effect Effects 0.000 claims description 14
- 239000007788 liquid Substances 0.000 abstract description 22
- 238000001514 detection method Methods 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000005856 abnormality Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000003381 stabilizer Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 210000003128 head Anatomy 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a straight-pull centering calibration system and a calibration method for a single crystal furnace, which are used for calibrating a coaxial line of a lifting steel wire and a quartz crucible and comprise the following steps: a calibration part which is arranged at the inner side of the main chamber of the single crystal furnace and is suspended; a monitoring section; and a processor for connecting with the monitoring portion; wherein the lifting steel wire is arranged straightly; the calibration part is connected with a heavy hammer at the lower end of the lifting steel wire, and the lower end face of the calibration part is away from the upper end face of the quartz crucible by a certain distance. The invention can quickly and accurately repeat centering calibration for multiple times, has stable result and good consistency, lays a foundation for ensuring the coincidence of the rotation centers of the crystal bar and the quartz crucible in the subsequent crystal growth, reduces the solid-liquid interface abnormality caused by the liquid level jitter of the molten silicon, ensures the normal growth of the crystal to the maximum extent, reduces the integral error rate from the prior 10 percent to 5 percent, improves the detection efficiency by about 5 percent, has good reappearance and consistency, and improves the qualified rate of the crystal growth.
Description
Technical Field
The invention belongs to the technical field of Czochralski single crystal manufacturing equipment, and particularly relates to a Czochralski centering calibration system and a Czochralski centering calibration method for a single crystal furnace.
Background
In the process of single crystal growth, in order to ensure a good growth environment of a crystal, a stable solid-liquid interface is needed to maintain the temperature distribution of a thermal field, namely, the situation of liquid level jitter is reduced as much as possible in the process of single crystal pulling. However, during the growth of the single crystal, the steel wire and the quartz crucible rotate coaxially and reversely, and if the rotation centers of the crystal rod and the quartz crucible do not coincide, the crystal rod is thrown up by the resistance of silicon liquid in the quartz crucible to the crystal rod during the rotation of the quartz crucible, so that the solid-liquid interface is deviated, the shape of the solid-liquid interface is changed, the distribution of the thermal field in the quartz crucible is influenced, the crystal growth environment is damaged, and the crystal growth is difficult. In order to ensure the normal growth of the single crystal, the centers of the rotating shafts of the steel wire and the quartz crucible must be coincident, and in the actual production process, the steel wire and the quartz crucible must be centered and calibrated before the crystal grows for each heat, so that all parts of the pulling system are positioned on a uniform central axis.
At present, the prior art adopts a human eye observation method to perform centering detection on a single crystal furnace, namely, a horizontal dial is placed at the center position of a crucible support through a heavy hammer, and whether the heavy hammer is at the center of the dial is observed from a window of a CCD camera by human eyes so as to judge whether the axial centers of a steel wire and a quartz crucible are coincided or not. However, this determination method has a large error range, low detection accuracy, poor reproduction consistency, and low detection efficiency.
Disclosure of Invention
The invention provides a straight-pull centering calibration system and a straight-pull centering calibration method for a single crystal furnace, which are used for calibrating a coaxial line of a pulling steel wire and a quartz crucible and solve the technical problems of large error range, low detection precision, poor reproduction consistency and low detection efficiency of the conventional centering calibration method.
In order to solve the technical problems, the invention adopts the technical scheme that:
a straight-pull centering calibration system of a single crystal furnace is used for lifting a steel wire to be calibrated with a quartz crucible in a coaxial line, and comprises the following components:
a calibration part which is arranged at the inner side of the main chamber of the single crystal furnace and is suspended;
a monitoring section;
and a processor for connecting with the monitoring portion;
wherein the lifting steel wire is arranged straightly; the calibration part is connected with a heavy hammer at the lower end of the lifting steel wire, and the lower end face of the calibration part is a certain distance away from the upper end face of the quartz crucible.
Further, the monitoring section is provided coaxially with the lifting steel wire and monitors whether the lifting steel wire and the calibration section are coaxial.
Further, the height from the lower end face of the calibration part to the upper end face of the quartz crucible is 50-60 mm; and the calibrating part is of an inverted cone structure, and the height of the calibrating part is not less than 700 mm.
Further, the diameter of the lower end face of the calibration part is 220-230 mm; the weight of the calibration part is 60-70 kg.
Further, the monitoring section includes:
an infrared emitter or an infrared receiver arranged on a puller head at the top of the auxiliary chamber of the single crystal furnace;
and an infrared receiver or an infrared transmitter arranged on the upper end surface of the heavy hammer;
the infrared receiver is connected with the processor.
Further, a stabilizing device for preventing the lifting steel wire from shaking in a large amplitude is arranged in the main chamber, and the stabilizing device is arranged above the quartz crucible;
the stabilizing device comprises telescopic rods which are oppositely arranged, one end of each telescopic rod is fixedly arranged on the inner side wall of the main chamber, the other end of each telescopic rod is arranged in a suspended manner, and a clamping jaw is arranged on one side of each telescopic rod, which is far away from the inner wall of the main chamber; the space formed by the alignment of the two clamping jaws is penetrated by the lifting steel wire and is not contacted with the lifting steel wire;
and a position sensor for monitoring the lifting steel wire is arranged on the inner side of the clamping jaw and is connected with the processor.
A Czochralski centering calibration method of a single crystal furnace adopts the calibration system as described in any one of the above items, and comprises the following steps: repeating the operation for multiple times to enable the steel wire to be straightened and the calibration part to be arranged above the quartz crucible in the main chamber in a suspended mode by 50-60mm, and monitoring whether the steel wire and the calibration part are coaxially arranged or not through the monitoring part; and recording each monitoring result through the processor and judging whether the monitoring results are consistent or not.
Furthermore, during each monitoring, the steel wire is controlled to drive the calibration part to slowly move from the auxiliary chamber to a set position in the main chamber of the single crystal furnace.
Further, in the calibration process, after the calibration part reaches a position 50-60mm away from the upper part of the quartz crucible in the main chamber, a stabilizing device arranged in the main chamber is controlled, so that the lifting steel wire is stabilized in a certain space range surrounded by two clamping jaws in the stabilizing device, and the lifting steel wire is not contacted with the inner walls of the clamping jaws.
Further, after each monitoring is finished, the stabilizing device is controlled to be loosened and far away from the lifting steel wire, so that the calibration part is slowly lifted into the auxiliary chamber.
Compared with the prior art, the technical scheme is adopted, the special calibration part is designed by taking the crystal rod rotary shoulder section as a model, the calibration part is matched with the pulling steel wire together to carry out centering simulation calibration, and then the accuracy and consistency of coaxiality calibration of the pulling steel wire and the quartz crucible are rapidly and accurately judged through the monitoring part and the processor.
The centering calibration system has simple structural design, convenient operation, high accuracy, small error range, good reproducibility, repeated centering calibration for many times, stable result and good consistency, lays a foundation for ensuring the coincidence of the rotation centers of the crystal rod and the quartz crucible in the subsequent crystal growth, reduces the abnormity of a solid-liquid interface caused by the shaking of the liquid level of molten silicon, reduces the change of the shape of the solid-liquid interface, and reduces the influence of the solid-liquid interface on a thermal field in the quartz crucible, thereby avoiding the risk that the crystal rod is thrown by the resistance of silicon liquid in the quartz crucible, furthest ensuring the normal growth of the single crystal, improving the qualified rate of crystal growth, ensuring the product quality, reducing the integral error rate from the prior 10 percent to 5 percent, having good reproduction consistency, and improving the detection efficiency by about 5 percent.
Drawings
FIG. 1 is a schematic structural diagram of a centering calibration system according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a calibration portion according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a centering calibration system according to another embodiment of the present invention;
FIG. 4 is a schematic view of a securing device according to an embodiment of the present invention.
In the figure:
10. main chamber 20, auxiliary chamber 30, carry and draw steel wire
40. Quartz crucible 50, calibration unit 60, and monitoring unit
61. Infrared emitter 62, infrared receiver 70, securing device
71. Telescopic rod 72, clamping jaw 73 and position sensor
80. CCD camera 90 and draft tube
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The embodiment provides a czochralski alignment system of a single crystal furnace, as shown in fig. 1, for aligning a pulling steel wire 30 and a quartz crucible 40 coaxially, comprising: a calibration part 50, a monitoring part 60 and a processor, wherein the calibration part 50, the monitoring part 60 and the processor are arranged on the inner side of the main chamber 10 of the single crystal furnace in a hanging manner, the processor is used for being connected with the monitoring part 60, the monitoring part 50 and the lifting steel wire 30 are coaxially arranged, and the processor is used for monitoring whether the lifting steel wire 30 and the calibration part 50 are coaxial or not; the lifting steel wire 30 is arranged in a straight manner; the calibration part 50 is connected to a weight at the lower end of the lifting steel wire 30, and the height of the lower end surface of the calibration part 50 from the upper end surface of the quartz crucible 40 is 50-60 mm.
Further, as shown in FIG. 2, the calibration portion 50 is an inverted cone structure, similar to a shoulder structure during crystal growth, and the height H of the calibration portion 50 is not less than 700mm, the diameter D of the lower end surface thereof is 220 mm and 230mm, and the weight of the calibration portion 30 is 60-70 kg. The upper end surface of the calibration part 50 is provided with a threaded hole for connection, and is connected with the weight through a slender connecting piece. In the present embodiment, the calibration portion 50 is modeled by a shoulder-rotating section of the crystal rod, and has a structure that is infinitely close to the pulling state, so as to better simulate the pulling state. Meanwhile, in the process of pulling the single crystal, shoulder turning is started after shoulder putting is finished, and the aim is to ensure that the diameter of the crystal growth is not enlarged without limit any more, the pulling speed is required to be improved, the growth direction of the crystal is required to be changed, and the crystal is grown longitudinally; when the height H of the crystal rod shoulder-rotating section is larger than or equal to 700mm and the diameter D of the lower end surface is 220-230mm, the longitudinal growth of the crystal is stable, the general weight is 60-70kg, the calibration part 50 of the structure is completely similar to the actual crystal rod shoulder-rotating section, and can be completely matched with the pulling steel wire 30 to perform centering simulation calibration.
Further, the monitoring section 60 includes: an infrared emitter 61 provided on the top pulling head of the auxiliary chamber 20 of the single crystal furnace and an infrared receiver 62 provided on the upper end surface of the weight at the lower part of the pulling steel wire 30, as shown in FIG. 1; of course, the infrared receiver 62 may be disposed on the top of the pulling head of the auxiliary chamber 20 of the single crystal furnace, and the infrared emitter 61 may be disposed on the upper end surface of the weight at the lower portion of the pulling steel wire 30, that is, the positions of the infrared emitter 61 and the infrared receiver 62 are interchanged, and the drawings are omitted. Regardless of the arrangement of the monitoring unit 60, the infrared receiver 62 is always in signal connection with a processor (not shown) disposed outside the main chamber, and the processor is disposed on a control panel of the single crystal furnace at the peripheral computer side. The output of infrared emitter 62 is connected to the input of infrared receiver 62, the output of infrared receiver 62 is connected to the input of the processor, and the output of the processor is connected to the input of infrared emitter 62. The infrared receiver 62 and the infrared emitter 61 are disposed corresponding to each other, and the infrared emitter 61 and the infrared receiver 62 are common accessories, and the type and the size are not particularly required, and the mounting structure is not particularly limited.
When the steel wire 30 drives the calibration part 50 to slowly descend to a position 50-60mm away from the upper end surface of the quartz crucible 40, namely, the distance range between the lower end surface of the crystal rotary shoulder and the upper end surface of the quartz crucible 40 in the actual drawing process is equivalent, when the calibration part 50 is stably suspended, the steel wire 30 and the calibration part 50 are on the same central axis, the infrared emitter 61 emits a laser beam, the infrared receiver 62 receives a signal, once the steel wire 30 and the calibration part 50 are not coaxial, the laser beam emitted by the infrared emitter 61 cannot be received by the infrared receiver 62, and the processor receives the misalignment information; the positions of the steel wire 30 and the calibration part 50 are continuously adjusted until the laser beam emitted by the infrared emitter 61 is received by the infrared receiver 62, and the processor can see whether the corresponding range of the upper and lower amplitudes of the steel wire 30 and the calibration part 50 is within the standard range, so as to judge the centering accuracy.
As shown in fig. 3, in order to further improve the alignment time of the pull steel wire 30 and the alignment portion 50 during alignment, a stabilizer 70 for preventing the pull steel wire 30 from shaking a large amount may be further provided in the main chamber 10, and the stabilizer 70 may be horizontally fixed right above the quartz crucible 40. Preferably, the securing device 70 is disposed at a position offset from the CCD camera 80 disposed on the main chamber 10, so as to prevent the CCD camera 80 from affecting the observation of the positions of the weight and the seed crystal in the quartz crucible 40.
As shown in fig. 4, the stabilizing device 70 includes symmetrically disposed telescopic rods 71, one end of each telescopic rod 71 is fixedly disposed on the inner side wall of the main chamber 10, the other end of each telescopic rod 71 is horizontally disposed in a suspended manner, and the axis of each telescopic rod 71 is horizontally perpendicular to the inner side wall of the main chamber 10 and perpendicular to the vertically disposed steel lifting wire 30. The retractable bar 71 is automatically moved in the horizontal direction toward the wire 30 or away from the wire 30 under the control of the processor. The telescopic rod 71 is provided with a jaw 72 on one side of the inner wall far away from the main chamber 10, and the upper end surface of the jaw 72 is horizontally arranged. The jaws 72 are a robot structure capable of being automatically controlled from left to right, and the structure is a common structure, so that the two jaws 72 are aligned to form a space which can be expanded or reduced, and the space surrounded by the two jaws 72 is penetrated by the steel lifting wire 30 and is not contacted with the steel lifting wire 30. When the steel wire 30 starts to approach, the enclosed space is larger, and as the telescopic rod 71 slowly extends forwards, the space enclosed by the claw 72 is gradually reduced, so that the steel wire 30 swings in a relatively small annular space, and the centering and calibrating time of the steel wire 30 and the calibrating part 50 is shortened.
The shortest radial distance between the claws 72 and the inner wall of the main chamber 10 is not more than the radial distance between the outer wall of the upper end surface of the guide cylinder 90 and the inner wall of the main chamber 10. The purpose is to prevent the stabilizer 70 from affecting the crystal pulling, especially the argon flow, when the stabilizer 70 is not needed to surround the steel pulling wire 30.
Further, in order to ensure the accuracy of the start-up of the claws 72, a position sensor 73 for monitoring the lifting wire 30 is provided inside the claws 72, and in the present embodiment, only one robot arm 62 is provided with a position sensor. The position of position sensor 73 is preferably located at the middle axis of jaw 72 parallel to wire 30, and position sensor 73 monitors wire 30 and sends a signal to the processor, which then controls telescoping rod 71 to move to the side near wire 30 until the center of the arc-shaped horizontal plane of jaw 72 matches the position of wire 30.
The invention designs a special calibration part 50 by taking a crystal rod shoulder rotating section as a model, enables the calibration part 50 to be matched with the pulling steel wire 30 together for centering simulation calibration, and then quickly and accurately judges the accuracy and consistency of coaxiality calibration of the pulling steel wire 30 and the quartz crucible 40 through the monitoring part 60 and the processor. The stabilizer 70 prevents the lifting steel wire 30 from shaking too much, and shortens the alignment time of the lifting steel wire 30 and the alignment portion 50. The centering calibration system is simple in structural design, convenient to operate, high in accuracy, small in error range and good in reproducibility, can repeatedly perform centering calibration for many times, judges the stability and consistency of centering results of the lifting steel wire 30 and the calibration part 50, and lays a foundation for ensuring the coincidence of the rotation centers of the crystal rod and the quartz crucible during subsequent crystal growth.
A Czochralski centering calibration method of a single crystal furnace adopts the calibration system, and comprises the following steps:
s1: the calibration part 50 is fixedly installed on a weight at the lower end of the lifting steel wire 30, and the lifting steel wire 30 is straightened; the pulling steel wire 30 is controlled to drive the aligning member 50 to slowly move from the sub-chamber 20 to a set position in the main chamber 10 of the single crystal furnace even if the aligning member 50 is suspended at a position 50-60mm above the quartz crucible 40 in the main chamber 10.
S2: when the position of the calibration part 50 is below the stabilizing device 70 and the calibration part 50 reaches a position 50-60mm away from the position right above the quartz crucible 40 in the main chamber 10, the position sensor 73 in the jaws 72 can monitor the position of the steel wire 30 and transmit the signal to the processor, and the processor controls the telescopic rods 71 on both sides to synchronously move towards one side of the steel wire 30, so that the steel wire 30 is stabilized in a certain space range surrounded by the two jaws 72, and the steel wire 30 is not in contact with the inner wall of the jaws 72.
S3: after the calibration part 50 is stabilized, the monitoring part 60 automatically monitors whether the steel lifting wire 30 and the calibration part 50 are coaxially arranged; and recording the monitoring result of each time through the processor and judging whether the monitoring results are consistent or not.
Specifically, when the calibration part 50 is stably suspended, the steel wire 30 and the calibration part 50 are on the same central axis, the infrared transmitter 61 transmits a laser beam, the infrared receiver 62 receives a signal, and once the steel wire 30 and the calibration part 50 are not coaxial, the laser beam transmitted by the infrared transmitter 61 cannot be received by the infrared receiver 62, and the processor receives the misalignment information; the positions of the steel wire 30 and the calibration part 50 are continuously adjusted until the laser beam emitted by the infrared emitter 61 is received by the infrared receiver 62, and the processor can see whether the corresponding range of the upper and lower amplitudes of the steel wire 30 and the calibration part 50 is within the standard range, so as to judge the centering accuracy.
S4: after the centering alignment is completed, the telescopic rod 71 of the stabilizer 70 is controlled to retract and the jaws 72 are released and moved away from the lifting wire 30 so that the aligning part 50 is slowly lifted to the initial position in the sub-chamber 20.
S5: repeating the steps S1-S4, centering and calibrating for a plurality of times, and comparing whether the positions of the three times of calibration are within the range of the standard.
By adopting the calibration method, the abnormity of the solid-liquid interface caused by the liquid level jitter of the molten silicon is reduced, the change of the shape of the solid-liquid interface is reduced, and the influence of the solid-liquid interface on a thermal field in the quartz crucible is reduced, so that the risk that a crystal rod is thrown by the resistance of the silicon liquid in the quartz crucible is avoided, the normal growth of a single crystal is ensured to the maximum extent, the crystal growth qualified rate is improved, the product quality is ensured, the integral error rate is reduced to 5% from the existing 10%, the reappearance consistency is good, and the detection efficiency is improved by about 5%.
1. The invention designs a special calibration part by taking a crystal rod shoulder rotating section as a model, enables the calibration part and the pulling steel wire to be matched together for centering simulation calibration, and then quickly and accurately judges the accuracy and consistency of coaxiality calibration of the pulling steel wire and the quartz crucible through the monitoring part and the processor.
2. The centering calibration system has the advantages of simple structural design, convenient operation, high accuracy, small error range, good reproducibility, stable result and good consistency, and repeatedly performs centering calibration for many times, thereby laying a foundation for ensuring the coincidence of the rotation centers of the crystal bar and the quartz crucible in the subsequent crystal growth.
3. The calibration method provided by the invention reduces the solid-liquid interface abnormality caused by the liquid level jitter of the molten silicon, reduces the change of the shape of the solid-liquid interface, and reduces the influence of the solid-liquid interface on the thermal field in the quartz crucible, thereby avoiding the risk that a crystal rod is thrown by the resistance of the silicon liquid in the quartz crucible, ensuring the normal growth of a single crystal to the maximum extent, improving the crystal growth qualification rate, ensuring the product quality, reducing the integral error rate from the existing 10% to 5%, having good reappearance and improving the detection efficiency by about 5%.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A straight-pull centering calibration system of a single crystal furnace is used for lifting a steel wire to be calibrated with a quartz crucible in a coaxial line, and is characterized by comprising the following components:
a calibration part which is arranged at the inner side of the main chamber of the single crystal furnace and is suspended;
a monitoring section;
and a processor for connecting with the monitoring portion;
wherein the lifting steel wire is arranged straightly; the calibration part is connected with a heavy hammer at the lower end of the lifting steel wire, and the lower end face of the calibration part is a certain distance away from the upper end face of the quartz crucible.
2. The system as set forth in claim 1, wherein the monitoring section is disposed coaxially with the pulling steel wire and is configured to monitor whether the pulling steel wire is coaxial with the calibrating section.
3. The single crystal furnace czochralski centering calibration system as claimed in claim 1 or 2, wherein the height of the lower end face of the calibration part from the upper end face of the quartz crucible is 50-60 mm; and the calibrating part is of an inverted cone structure, and the height of the calibrating part is not less than 700 mm.
4. The system as claimed in claim 3, wherein the diameter of the lower end face of the calibration part is 220-230 mm; the weight of the calibration part is 60-70 kg.
5. The single crystal furnace czochralski centering calibration system as claimed in any one of claims 1-2 and 4, wherein the monitoring part comprises:
an infrared emitter or an infrared receiver arranged on a puller head at the top of the auxiliary chamber of the single crystal furnace;
and an infrared receiver or an infrared transmitter arranged on the upper end surface of the heavy hammer;
the infrared receiver is connected with the processor.
6. The straight pulling and centering calibration system of the single crystal furnace as claimed in claim 1, wherein a stabilizing device for preventing the lifting steel wire from shaking to a large extent is further arranged in the main chamber, and the stabilizing device is arranged above the quartz crucible;
the stabilizing device comprises telescopic rods which are oppositely arranged, one end of each telescopic rod is fixedly arranged on the inner side wall of the main chamber, the other end of each telescopic rod is arranged in a suspended manner, and a clamping jaw is arranged on one side of each telescopic rod, which is far away from the inner wall of the main chamber; the space formed by the alignment of the two clamping jaws is penetrated by the lifting steel wire and is not contacted with the lifting steel wire;
and a position sensor for monitoring the lifting steel wire is arranged on the inner side of the clamping jaw and is connected with the processor.
7. A Czochralski centering calibration method of a single crystal furnace, wherein the calibration system as claimed in any one of claims 1 to 6 is adopted, and the steps comprise: repeating the operation for multiple times to enable the steel wire to be straightened and the calibration part to be arranged above the quartz crucible in the main chamber in a suspended mode by 50-60mm, and monitoring whether the steel wire and the calibration part are coaxially arranged or not through the monitoring part; and recording each monitoring result through the processor and judging whether the monitoring results are consistent or not.
8. The method for Czochralski centering calibration of a single crystal furnace as claimed in claim 7, wherein the steel wire is controlled to drive the calibration part to slowly move from the auxiliary chamber to a set position in the main chamber of the single crystal furnace during each monitoring.
9. The Czochralski centering calibration method of the single crystal furnace as claimed in claim 8, wherein in the calibration process, after the calibration part reaches a position 50-60mm above a quartz crucible in the main chamber, a stabilizing device arranged in the main chamber is controlled, so that the pulling steel wire is stabilized in a certain space range surrounded by two jaws in the stabilizing device, and the pulling steel wire is not contacted with the inner walls of the jaws.
10. The method as claimed in claim 9, wherein after each monitoring, the stabilizing means is controlled to be released and away from the steel wire so that the calibrating portion is slowly pulled into the sub-chamber.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114941171A (en) * | 2022-05-25 | 2022-08-26 | 宇泽半导体(云南)有限公司 | Device and process method for growing quasi-rectangular column monocrystalline silicon by using Czochralski method |
| CN116695235A (en) * | 2023-08-08 | 2023-09-05 | 苏州晨晖智能设备有限公司 | Control method for inhibiting crystal arcing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006256879A (en) * | 2005-03-15 | 2006-09-28 | Toshiba Ceramics Co Ltd | Silicon single crystal pulling apparatus |
| JP2013216556A (en) * | 2012-04-12 | 2013-10-24 | Sumco Corp | Method for pulling single crystal |
| CN111893562A (en) * | 2020-08-14 | 2020-11-06 | 内蒙古中环领先半导体材料有限公司 | Single crystal furnace pulling head calibration device and calibration method |
| CN214271107U (en) * | 2020-11-12 | 2021-09-24 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski centering calibration system of single crystal furnace |
-
2020
- 2020-11-12 CN CN202011258162.7A patent/CN114481300A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006256879A (en) * | 2005-03-15 | 2006-09-28 | Toshiba Ceramics Co Ltd | Silicon single crystal pulling apparatus |
| JP2013216556A (en) * | 2012-04-12 | 2013-10-24 | Sumco Corp | Method for pulling single crystal |
| CN111893562A (en) * | 2020-08-14 | 2020-11-06 | 内蒙古中环领先半导体材料有限公司 | Single crystal furnace pulling head calibration device and calibration method |
| CN214271107U (en) * | 2020-11-12 | 2021-09-24 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski centering calibration system of single crystal furnace |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114941171A (en) * | 2022-05-25 | 2022-08-26 | 宇泽半导体(云南)有限公司 | Device and process method for growing quasi-rectangular column monocrystalline silicon by using Czochralski method |
| CN116695235A (en) * | 2023-08-08 | 2023-09-05 | 苏州晨晖智能设备有限公司 | Control method for inhibiting crystal arcing |
| CN116695235B (en) * | 2023-08-08 | 2023-10-24 | 苏州晨晖智能设备有限公司 | Control method for inhibiting crystal arcing |
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