CN114460142A - Hydrogen detector and preparation method thereof - Google Patents
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- CN114460142A CN114460142A CN202210111533.1A CN202210111533A CN114460142A CN 114460142 A CN114460142 A CN 114460142A CN 202210111533 A CN202210111533 A CN 202210111533A CN 114460142 A CN114460142 A CN 114460142A
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- 239000001257 hydrogen Substances 0.000 title claims abstract description 117
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 117
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 80
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 238000004080 punching Methods 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 32
- 238000000059 patterning Methods 0.000 description 5
- 229910052745 lead Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
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- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B3/00—Audible signalling systems; Audible personal calling systems
- G08B3/10—Audible signalling systems; Audible personal calling systems using electric transmission; using electromagnetic transmission
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Abstract
The invention belongs to the technical field of hydrogen safety utilization and hydrogen detection, and particularly relates to a hydrogen detector and a preparation method thereof. The problem that the detection range is small in the prior art is solved. The invention has a continuous direct current voltage with a fixed frequency signal, and the continuous direct current voltage is uninterruptedly transmitted to the first-level Wheatstone bridge, when no hydrogen gas leaks, the resistance of the hydrogen sensitive element does not change, so the signals at the two ends of the comparator are equipotential, and no voltage signal is transmitted to the second-level Wheatstone bridge, so the digital diode does not have display. When hydrogen leaks, the hydrogen sensitive element reacts with the hydrogen, so that the resistance of the hydrogen sensitive element becomes low, and when the resistance change of the hydrogen sensitive element does not reach a set value, the comparator cannot output a high-level signal, but the balance bridge outputs a high-frequency signal and can drive the buzzer to give an alarm.
Description
Technical Field
The invention belongs to the technical field of hydrogen safety utilization and hydrogen detection, and particularly relates to a hydrogen detector and a preparation method thereof.
Background
Hydrogen is an important clean energy source and is widely applied to the industrial fields of chemical industry, electronics, metallurgy, food, aerospace and the like. Particularly, the development and utilization of hydrogen are urgent today when the problems of energy crisis, environmental pollution and the like are becoming serious. In recent years, development and utilization of hydrogen energy have been achieved, and automobiles driven by hydrogen fuel cells have also come into the market. The design indexes of the hydrogen sensor are as follows: high sensitivity, high response speed, high stability, large detection range, low power consumption and the like. However, the development of the current hydrogen sensor is relatively lagged behind, the popularization of hydrogen energy is greatly hindered, and the current electrochemical type, catalytic combustion type, metal oxide resistance type and the like which are popular in the market are provided.
Disclosure of Invention
The invention provides a hydrogen detector and a preparation method thereof, aiming at solving the problem of small detection range in the prior art.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a hydrogen detector comprises a substrate, wherein a primary Wheatstone bridge and a secondary Wheatstone bridge are arranged on the substrate, the primary Wheatstone bridge and the secondary Wheatstone bridge are connected in series through a comparator, the output end of the secondary Wheatstone bridge is sequentially connected with an analog-to-digital converter and a digital diode, and the other output end of the secondary Wheatstone bridge is grounded;
the primary Wheatstone bridge consists of a resistor R1, a resistor R2, a resistor R3 and a hydrogen sensitive element, the resistor R1 and the resistor R2 are connected in series and then connected in parallel with a series circuit consisting of the hydrogen sensitive element and the resistor R3, the inverting input end of the comparator is connected between the resistor R1 and the resistor R2, and the positive input end of the comparator is connected between the hydrogen sensitive element and the resistor R3 through a buzzer;
the two-stage Wheatstone bridge consists of a hydrogen sensitive element, a resistor R4, a resistor R5 and a resistor R6, the output end of the comparator is respectively connected with the hydrogen sensitive element and the resistor R6, and the input end of the analog-to-digital converter is connected between the hydrogen sensitive element and the resistor R4.
Specifically, the substrate is glass, PCB, polyimide or special paper.
Specifically, the hydrogen-sensitive element and the hydrogen-sensitive element are obtained by exposing, developing and etching a palladium film and an alloy thereof or by exposing and chemically coating.
Specifically, the diameter of the atomic cluster of palladium and palladium alloy in the hydrogen-sensitive element is 0.1-5 nm, the thickness of the film layer is 0.1-10 nm, the diameter of the atomic cluster of palladium and palladium alloy in the hydrogen-sensitive element is 1-10 nm, and the thickness of the film layer is 50-100 nm.
The invention also provides a preparation method of the hydrogen detector, which comprises the following steps:
(1) depositing a layer of conductive metal on the substrate to form a resistor of a Wheatstone bridge;
(2) depositing a layer of low-resistance metal for realizing the electric connection between the components;
(3) depositing an insulating layer;
(4) punching holes in the hydrogen-sensitive element and the hydrogen-sensitive element area, punching holes in an analog-to-digital converter, punching holes in a digital diode, and punching holes in a buzzer connection electrode;
(5) treating the surface of the insulating layer to improve the surface roughness of the insulating layer;
(6) depositing a metal layer on the insulating layer to form a hydrogen-sensitive element and an electrode of the hydrogen-sensitive element;
(7) depositing a layer of hydrogen sensitive material with different thicknesses in the areas of the hydrogen sensitive element and the hydrogen sensitive element respectively by adopting a chemical coating mode, and etching to form the hydrogen sensitive element through two times of exposure;
(8) and a comparator, a buzzer, an analog-to-digital converter and a digital diode are installed.
Specifically, the insulating layer is a silicon nitride layer, a silicon oxide and silicon nitride laminated layer or a polyimide insulating layer.
Specifically, in the step (3), the insulating layer is distributed on the whole hydrogen gas detector and is positioned on the upper part of the resistor and the electric connecting wire.
Specifically, in the step (5), the material adopted for processing the surface of the insulating layer is plasma, aluminum oxide or foam nickel.
Specifically, in the step (5), the specific indexes of the surface roughness of the insulating layer are as follows: the surface roughness of the insulating layer in the first-level Wheatstone bridge area is 5-10 nm; the surface roughness of the insulating layer in the second-level Wheatstone bridge area is 10-100 nm.
Compared with the prior art, the invention has the following advantages:
1. in the hydrogen detector provided by the invention, two groups of Wheatstone bridges are cascaded, the middle of the Wheatstone bridges is subjected to signal transmission control through the comparator, the hydrogen sensitive element in the first-stage Wheatstone bridge controls the buzzer to give an alarm, and the second-stage Wheatstone bridge is subjected to hydrogen concentration test, so that the detection of hydrogen leakage can be realized, the leaked hydrogen concentration can be obtained, the response time is fast, the sensitivity is high, and the detection range is large.
2. In the hydrogen detector provided by the invention, the comparator is controlled to open the secondary balance bridge through the high-frequency signal, the resistance type hydrogen sensor with large measuring range is arranged in the secondary balance bridge, and the hydrogen concentration is detected through the pressure difference change of the secondary balance bridge, so that the detection in a large range can be realized.
3. In the hydrogen detector provided by the invention, the hydrogen sensitive element and the Wheatstone bridge are integrated, so that the hydrogen detector is simple in structure and strong in operability.
4. According to the preparation method of the hydrogen detector, the components in the Wheatstone bridge are thinned, and the hydrogen sensitive device and the resistor are isolated by the insulating materials such as silicon nitride and the like, so that the volume of the hydrogen detector is reduced, the structure of the hydrogen detector is simplified, the manufacturing cost is reduced, and the preparation method is simple.
Drawings
FIG. 1 is a schematic diagram of a hydrogen gas detector according to the present invention;
FIG. 2 is a schematic diagram of a hydrogen gas detector according to the present invention;
FIG. 3 is a schematic diagram of another embodiment of the hydrogen sensor of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described below with reference to the accompanying drawings and embodiments. The examples described herein are merely illustrative of the invention and are not intended to be limiting.
A hydrogen detector is shown in figure 1 and comprises a substrate, wherein the substrate is made of glass, PCB, polyimide or special paper, a primary Wheatstone bridge and a secondary Wheatstone bridge are arranged on the substrate, the primary Wheatstone bridge and the secondary Wheatstone bridge are connected in series through comparators for signal control, the output end of the secondary Wheatstone bridge is sequentially connected with an analog-to-digital converter and a digital diode, and the other output end of the secondary Wheatstone bridge is grounded.
The comparator can be a triode integrated on the substrate, and can also be an electronic element comparator, and the electrical communication is realized through a plug-in or surface-mounted process.
The primary Wheatstone bridge is composed of a resistor R1, a resistor R2, a resistor R3 and a hydrogen sensitive element 1, the resistor R1 and the resistor R2 are connected in series and then connected in parallel with a series circuit composed of the hydrogen sensitive element 1 and the resistor R3, the inverting input end of the comparator is connected between the resistors R1 and R2, and the positive input end of the comparator 5 is connected between the hydrogen sensitive element 1 and the resistor R3 through the buzzer.
The two-stage Wheatstone bridge is composed of a hydrogen sensitive element 2, a resistor R4, a resistor R5 and a resistor R6, the output end of the comparator is respectively connected with the hydrogen sensitive element 2 and the resistor R6, and the input end of the analog-to-digital converter is connected between the hydrogen sensitive element 2 and the resistor R4.
The hydrogen sensitive element 1 and the hydrogen sensitive element 2 are obtained by exposing, developing and etching a palladium film and an alloy thereof or by exposing and chemically coating.
The diameter of Pb and Pb cluster of alloy in the hydrogen-sensitive element 1 is 0.1-5 nm, the thickness of the film layer is 0.1-10 nm, the diameter of Pb and Pb cluster of alloy in the hydrogen-sensitive element 2 is 3-10 nm, and the thickness of the film layer is 30-100 nm.
The working principle of the invention is as follows: when no hydrogen gas leaks, the resistance of the hydrogen sensitive element 1 is not changed, so that the signals at two ends of the comparator are equipotential, and no voltage signal is transmitted to the secondary Wheatstone bridge, so that the digital diode cannot display. When hydrogen leaks, the hydrogen-sensitive element 1 makes the resistance of the hydrogen-sensitive element 1 become low when reacting with hydrogen, and when the resistance change of the hydrogen-sensitive element 1 does not reach a set value, the comparator cannot output a high-level signal, but the balance bridge has a high-frequency signal output and can drive the buzzer to give an alarm.
When the hydrogen leakage volume exceeds a certain value, the voltage of the hydrogen sensitive element 1 reaches a set value, the trigger voltage of the comparator is reached, the comparator outputs a high level signal, at the moment, the resistance of the hydrogen sensitive element 2 is reduced after the hydrogen is absorbed, the output end of the secondary Wheatstone bridge outputs a voltage signal, and the digital diode is driven to shine through the analog-to-digital converter to display the hydrogen concentration information.
The embodiment also provides a preparation method of the hydrogen detector, which is shown in fig. 2 and 3 and specifically includes the following steps:
(1) patterning the fixed resistance film layer: a layer of conductive metal is deposited on a substrate to form a resistor of a Wheatstone bridge, different materials such as MO, ITO, Al and the like can be adopted according to the resistance value, ohmic resistors with different shapes can be designed in a unit area according to the requirement of a balanced bridge, and the ohmic resistors can be circular, serpentine, linear and the like.
(2) The connection line membrane layer is graphical between the resistance: and a layer of low-resistance metal such as copper or gold is deposited to realize the electrical connection between the components, and the specific function is to connect all electrodes such as a resistor, a buzzer, a comparator and the like, and the shapes of the electrodes are not limited.
(3) Patterning an insulating layer: depositing a silicon nitride layer as the protective layer of metal and resistance element and separating the hydrogen sensitive film layer from the connection layer, and features that the whole detector is distributed on the upper part of the resistance and the electric connection line.
Other materials with the same function, such as a silicon oxide and silicon nitride laminated layer, or insulating polyimide with an insulating function, are within the scope of the present invention.
(4) Patterning of contact electrodes of the components: punching holes in the areas of the hydrogen-sensitive element 1 and the hydrogen-sensitive element 2, punching holes in an analog-digital converter, punching holes in a digital diode, and punching holes in a buzzer connection electrode.
(5) The plasma body processes the silicon nitride surface, promotes the surface roughness and increases the number of atomic clusters of palladium or palladium alloy in unit area, thereby promoting the sensitivity to hydrogen, and the specific indexes of the roughness are as follows: the roughness of the silicon nitride of the first-level Wheatstone bridge area is 5-10 nm; the roughness of the silicon nitride surface in the second-level Wheatstone bridge area is 10-100 nm.
Other ways of increasing the surface roughness also belong to the protection scope of the present invention, such as adding aluminum oxide and bubble surface nickel on silicon nitride.
(6) Patterning of hydrogen sensitive elements: the electrodes of the hydrogen sensitive elements are formed by depositing metal (copper, gold, nickel, etc.) on the silicon nitride. A layer of hydrogen sensitive material with different thicknesses is respectively manufactured in the areas of the hydrogen sensitive element 1 and the hydrogen sensitive element 2, and patterning is realized in a mode of twice exposure and etching to form the hydrogen sensitive element, wherein the larger the effective area of the hydrogen sensitive layer in unit area is, the larger the resistance change is, and the hydrogen sensitive element can be in a circular shape, a snake shape or a linear shape.
(7) And a comparator, a buzzer, an analog-to-digital converter and a digital diode are installed.
Claims (9)
1. A hydrogen detector comprises a substrate and is characterized in that a primary Wheatstone bridge and a secondary Wheatstone bridge are arranged on the substrate, the primary Wheatstone bridge and the secondary Wheatstone bridge are connected in series through a comparator, the output end of the secondary Wheatstone bridge is sequentially connected with an analog-to-digital converter and a digital diode, and the other output end of the secondary Wheatstone bridge is grounded;
the primary Wheatstone bridge consists of a resistor R1, a resistor R2, a resistor R3 and a hydrogen sensitive element (1), the resistor R1 and the resistor R2 are connected in series and then connected in parallel with a series circuit consisting of the hydrogen sensitive element (1) and the resistor R3, the inverting input end of the comparator is connected between the resistor R1 and the resistor R2, and the positive input end of the comparator is connected between the hydrogen sensitive element (1) and the resistor R3 through a buzzer;
the two-stage Wheatstone bridge consists of a hydrogen sensitive element (2), a resistor R4, a resistor R5 and a resistor R6, the output end of the comparator is respectively connected with the hydrogen sensitive element (2) and the resistor R6, and the input end of the analog-to-digital converter is connected between the hydrogen sensitive element (2) and the resistor R4.
2. A hydrogen gas sensor according to claim 1, characterized in that the substrate is glass, PCB, polyimide or specialty paper.
3. A hydrogen sensor according to claim 1 or 2, characterized in that the hydrogen-sensitive elements (1, 2) are obtained by exposing, developing and etching palladium film or its alloy or by exposing and chemical plating.
4. The hydrogen detector according to claim 3, wherein the hydrogen-sensitive element (1) has a palladium and palladium alloy cluster diameter of 0.1-5 nm, a film thickness of 0.1-10 nm, and the hydrogen-sensitive element (2) has a palladium and palladium alloy cluster diameter of 1-10 nm, and a film thickness of 50-100 nm.
5. A method for producing a hydrogen sensor according to claim 1, comprising the steps of:
(1) depositing a layer of conductive metal on the substrate to form a resistor of a Wheatstone bridge;
(2) depositing a layer of low-resistance metal for realizing the electric connection between the components;
(3) depositing an insulating layer;
(4) punching holes in the hydrogen-sensitive element (1) and the hydrogen-sensitive element (2), punching holes in an analog-to-digital converter, punching holes in a digital diode, and punching holes in a buzzer connection electrode;
(5) treating the surface of the insulating layer to improve the surface roughness of the insulating layer;
(6) depositing a metal layer on the insulating layer to form electrodes of a hydrogen-sensitive element (1) and a hydrogen-sensitive element (2);
(7) depositing a layer of hydrogen sensitive material with different thicknesses in the areas of the hydrogen sensitive element (1) and the hydrogen sensitive element (2) respectively by adopting a chemical coating mode, and forming the hydrogen sensitive element by exposing and etching twice;
(8) and a comparator, a buzzer, an analog-to-digital converter and a digital diode are installed.
6. A method for preparing a hydrogen gas detector according to claim 5, characterized in that the insulating layer is a silicon nitride layer, a silicon oxide and silicon nitride laminate or a polyimide insulating layer.
7. A method for preparing a hydrogen sensor according to claim 5 or 6, wherein in the step (3), the insulating layer is distributed on the whole hydrogen sensor and is positioned on the upper part of the resistor and the electric connecting wire.
8. The method according to claim 7, wherein in the step (5), the material used for processing the surface of the insulating layer is plasma, aluminum oxide or nickel on the surface of the bubble.
9. The method for preparing a hydrogen detector according to claim 8, wherein in the step (5), the specific indexes of the surface roughness of the insulating layer are as follows: the surface roughness of the insulating layer in the first-level Wheatstone bridge area is 5-10 nm; the surface roughness of the insulating layer in the second-level Wheatstone bridge area is 10-100 nm.
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|---|---|---|---|---|
| US4332772A (en) * | 1980-04-21 | 1982-06-01 | National Mine Service Company | Portable gas detector |
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| CN110568028A (en) * | 2019-10-18 | 2019-12-13 | 安徽伯华氢能源科技有限公司 | Hydrogen sensor |
| CN110658238A (en) * | 2018-06-29 | 2020-01-07 | 上海汽车集团股份有限公司 | Catalytic combustion gas sensor based on ceramic-based micro-hotplate and preparation method thereof |
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- 2022-01-29 CN CN202210111533.1A patent/CN114460142B/en active Active
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|---|---|---|---|---|
| US4332772A (en) * | 1980-04-21 | 1982-06-01 | National Mine Service Company | Portable gas detector |
| CN206583845U (en) * | 2017-03-24 | 2017-10-24 | 湖北大学 | Adaptive density of hydrogen detection circuit based on hydrogen gas sensor |
| CN109000830A (en) * | 2018-06-26 | 2018-12-14 | 常州元晶电子科技有限公司 | A kind of double Wheatstone bridge temperature-compensating differential pressure pressure sensors and preparation method thereof |
| CN110658238A (en) * | 2018-06-29 | 2020-01-07 | 上海汽车集团股份有限公司 | Catalytic combustion gas sensor based on ceramic-based micro-hotplate and preparation method thereof |
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Non-Patent Citations (2)
| Title |
|---|
| 王坤: "新型船用可燃气体探测器设计构想", 《船舶标准化与质量》, no. 5, 31 December 2015 (2015-12-31), pages 48 - 50 * |
| 王坤;: "新型船用可燃气体探测器设计构想", 船舶标准化与质量, no. 05, 15 October 2015 (2015-10-15) * |
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