CN100373652C - Gas sensor of hydrogen semiconductor transducer, and preparation method - Google Patents
Gas sensor of hydrogen semiconductor transducer, and preparation method Download PDFInfo
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- CN100373652C CN100373652C CNB2004101027578A CN200410102757A CN100373652C CN 100373652 C CN100373652 C CN 100373652C CN B2004101027578 A CNB2004101027578 A CN B2004101027578A CN 200410102757 A CN200410102757 A CN 200410102757A CN 100373652 C CN100373652 C CN 100373652C
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- semiconductor transducer
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- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 66
- 239000001257 hydrogen Substances 0.000 title claims abstract description 66
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000007789 gas Substances 0.000 title claims abstract description 51
- 125000004435 hydrogen atom Chemical class [H]* 0.000 title claims description 16
- 238000002360 preparation method Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 44
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 38
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 9
- 239000003595 mist Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000006210 lotion Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- 239000012467 final product Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 abstract description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 16
- 230000035945 sensitivity Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
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Abstract
The present invention relates to a sensitive element and a manufacture method thereof for hydrogen sensitive semiconductor sensors, which belongs to the technical field of manufacturing techniques of gas sensitive elements of semiconductor sensors. The manufacture method is characterized in that an n-SnO<2-x> thin film layer is prepared on a Si (100) chip by a radio frequency sputtering process, a Pd-Ni layer is prepared on a tin dioxide layer, so a gas sensitive element of a Pd-Ni/SnO2 composite film is formed. The gas sensitive element of the Pd-Ni/SnO2 composite film prepared by the present invention can greatly improve selectivity and sensibility to hydrogen in normal temperature environment. The present invention can provide a manufacture method of the semiconductor gas sensitive elements with simple manufacturing process and low cost.
Description
Technical field
The present invention relates to a kind of semiconductor transducer senser to the hydrogen sensitivity and preparation method thereof, belong to semiconductor transducer gas sensor manufacturing process technology field.
Background technology
Semiconductor gas sensor is meant and adopts semi-conducting material as senser, improves corresponding selectivity and sensitiveness by doping or surface modification technology.Because the variation of environmental gas composition causes the electrical property of semiconductor gas sensor and changes the kind and the concentration of the gas that exists in the testing environment by the sheet resistance of measuring semiconductor gas sensor.
As everyone knows, hydrogen is a kind of renewable and clean energy resource, has pollution-free, the reproducible energy, development along with fossil type fuel crunch and microelectronics industry, hydrogen uses frequent day by day in daily life, but the aerial concentration of hydrogen reaches 4.1%～75.6% will blast, therefore, hydrogen sensor just becomes extremely important for the hydrogen leak detection in the use of hydrogen, be generally used for hydrogen and detect chemical sensor based on the body doping stannic oxide, selectivity and sensitivity are relatively poor, can not satisfy hydrogen and leak the needs of monitoring in real time.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor transducer gas sensor that hydrogen is had high selectivity.
Another object of the present invention provides a kind of manufacture method of gas sensor of hydrogen semiconductor transducer, simple, cheap with preparation technology, as to have high selectivity and sensitivity hydrogen senser.
To achieve these goals, the present invention takes following technical scheme:
A kind of gas sensor of hydrogen semiconductor transducer is a sputter N type tin ash semiconductor film layer on Si (100) substrate, and forms Pd-Ni alloy firm layer, the Pd-Ni/SnO that is constituted on the tin ash layer
2The composite membrane gas sensor.
In above-mentioned gas sensor of hydrogen semiconductor transducer, described N type tin ash semiconductor film layer is a kind of film with (211) preferred orientation.
In above-mentioned gas sensor of hydrogen semiconductor transducer, described gas sensor of hydrogen semiconductor transducer surface also is provided with a pair of measurement electrode.
In above-mentioned gas sensor of hydrogen semiconductor transducer, the mass ratio of Ni and Pd is 0～0.15 in the described Pd-Ni alloy firm layer, and Ni/Pd ≠ 0.
A kind of method for preparing gas sensor of hydrogen semiconductor transducer, this side comprises the steps:
A. make each tin ash target: the tin ash micro mist is carried out hip treatment; Carry out surface grinding afterwards and handle, promptly obtain the tin ash target;
B. the Si single-chip to (100) face carries out surface treatment;
C. in multi-target magnetic control sputtering equipment, adopt the sputtering power scope of 60～120W, the underlayer temperature scope is controlled to be 25 ℃～400 ℃, and annealing region is controlled to be 100 ℃～700 ℃, at P
O2/ P
ArBe under 1: 1～1: 6 the atmosphere, on the Si single-chip through step (b) surface-treated (100) face, the tin ash target that uses step (a) to make is prepared the tin dioxide thin film layer, and sputtering time is 10～30 minutes;
D. adopt cosputtering method sputter Pd-Ni alloy firm layer on the tin ash surface, the thickness of thin layer is at 10～50nm; Can control Pd, Ni sputtering power adjustment respectively with the composition of realizing Pd, Ni;
E. the composite membrane that at last step (d) is made passes through in-situ annealing, and its annealing region is controlled to be 200～800 ℃, and the time is 3～8 hours, promptly makes Pd-Ni/SnO
2The composite membrane gas sensor.
In described step (d), by sputter Pd-Ni alloy firm layer, this alloy firm layer is in a kind of discontinuous state basically, also will carry out in-situ annealing by (e) step, realizes that the expansion of Pd-Ni layer, infiltration reach the modification to tin dioxide thin film.In the described step (e), the annealing heating rate is very low, and the time is generally greater than 3 hours.
In the manufacture method of a kind of hydrogen semiconductor sensor sensing element of the present invention, this method also comprises step (f): masking method is adopted on the surface at the tin dioxide thin film layer, and utilize magnetically controlled sputter method at two Cu electrodes of film two ends preparation, distance between electrodes equals the width of sample.
In the described step (f) of the manufacture method of a kind of hydrogen semiconductor sensor sensing element of the present invention, described masking method covers a tin ash layer part for adopt the glass baffle plate in sputter procedure, reserve the position of preparation electrode, prepare measurement electrode at reserved location.
In the described step (d) of the manufacture method of a kind of hydrogen semiconductor sensor sensing element of the present invention, in the sputter Pd-Ni alloy firm layer, the mass ratio of Ni and Pd is 0～0.15, and Ni/Pd ≠ 0 on the tin ash surface.
In the described step (a) of the manufacture method of a kind of hydrogen semiconductor sensor sensing element of the present invention, the purity of employed tin ash is 99.95%.
In the described step (a) of the manufacture method of a kind of hydrogen semiconductor sensor sensing element of the present invention, describedly the tin ash micro mist is carried out the hip treatment process be, the tin ash micro mist is carried out 16-20 hour dried under 100-130 ℃ of condition, under 1000-1200 ℃ of condition sintering 3-6 hour again.
In the described step (b) of the manufacture method of a kind of hydrogen semiconductor sensor sensing element of the present invention, described Si single-chip to (100) face carries out the surface-treated step and is, is described Si single-chip is adopted H
2SO
4+ K
2Cr
2O
7Washing lotion was soaked 22～28 hours, was that medium carries out ultrasonic waves for cleaning to the silicon chip that soaked with methyl alcohol, acetone, the ethanol of chemical pure concentration respectively then, obtained clean silicon substrate.
In the described step (b) of the manufacture method of a kind of hydrogen semiconductor sensor sensing element of the present invention, Si sheet washing lotion collocation method is: the H that with mass ratio is 1: 1
2SO
4With K
2Cr
2O
7Mix, the water-bath heating got final product in 0.5～2.5 hour, and the Si sheet cleaning process of soaking is: ultrasonic waves for cleaning is 5～30 minutes in the methyl alcohol, ultrasonic waves for cleaning 5～30 minutes in acetone then, ultrasonic waves for cleaning 5～30 minutes in ethanol at last.
Advantage of the present invention and effect are: the Pd-Ni/SnO of preparation
2The gas sensor of composite membrane can make this gas sensor for hydrogen good selectivity and high sensitivity be arranged, and therefore, it can be applied to fields such as gas leakage detection and gas analysis.The present invention has adopted the MULTILAYER COMPOSITE membrane technology, technology is simple, continuity is fine, once can finish all technology in an equipment, saves cost, consistency of product is fine, is beneficial to prepare gas sensor of hydrogen semiconductor transducer cheap, excellent performance.
Description of drawings
Fig. 1. be the structural representation of gas sensor of hydrogen semiconductor transducer of the present invention, Fig. 1 (a) is the gas sensor of hydrogen semiconductor transducer front view; Fig. 1 (b) is the gas sensor of hydrogen semiconductor transducer vertical view.
Fig. 2. Pd-Ni composition of layer ratio is to the influence curve of sensitivity in the expression hydrogen sensitive element.
Fig. 3. the underlayer temperature of preparation tin ash layer is to the influence curve of hydrogen sensitivity in the expression hydrogen sensitive element.
Fig. 4. the expression hydrogen sensitive element is to different reducing gas sensitivity and response time curve.
Embodiment
Below in conjunction with drawings and Examples the present invention is further narrated:
As shown in Figure 1, this gas sensor of hydrogen semiconductor transducer is a sputter N type tin ash semiconductor film layer 4 on Si (100) substrate 1, and forms Pd-Ni alloy firm layer 2, the Pd-Ni/SnO that is constituted on tin ash layer 4
2The composite membrane gas sensor.Also be provided with a pair of measurement electrode 3 on the gas sensor of hydrogen semiconductor transducer surface.
Embodiment one:
At first the tin ash micro mist is carried out hip treatment, its process is that the tin ash micro mist is carried out 18 hours dried under 110 ℃ of conditions, again sintering 4 hours under 1050 ℃ of conditions.
Si single-chip to (100) face carries out surface treatment then, and its process is that (100) face Si single-chip is adopted H
2SO
4+ K
2Cr
2O
7Washing lotion was soaked 24 hours, was that medium carries out ultrasonic waves for cleaning to the silicon chip that soaked with methyl alcohol, acetone, ethanol respectively then, obtained clean silicon substrate.
Prepare the tin ash semiconductive thin film again, sintered density is reached 90% tin ash target and carry out radio frequency sputtering, sputtering parameter: sputtering power 65W; Sputtering time 15 minutes; Underlayer temperature is 25 ℃; P
O2/ P
ArIt is 1: 4.Tin dioxide thin film in-situ annealing technology is 400 ℃, 6 hours.Deposition Cu electrode on the tin dioxide thin film for preparing adopts cosputtering deposition Pd-Ni alloy firm then on this basis, and Ni: Pd=0.05 (atomic ratio), film thickness are 35nm.Duplicature is in-situ annealing together, and annealing temperature is 600 ℃, 5 hours.Tin ash is through XRD, and XPS tests proof, and this film is a N type tin ash semiconductive thin film, and film has (211) preferred orientation.
Embodiment two: except that the preparation technology parameter of tin dioxide thin film is different from the embodiment one, the preparation method of remaining embodiment two each layer employing is identical with embodiment one.The preparation technology parameter of tin dioxide thin film is: sputtering power 98W; Sputtering time 15 minutes; Underlayer temperature is 400 ℃; P
O2/ P
ArIt is 1: 4.Tin dioxide thin film in-situ annealing technology is 700 ℃, 6 hours.Deposition Cu electrode on the tin dioxide thin film for preparing.Ni in the Pd-Ni alloy firm: Pd=0.1 (atomic ratio), thickness are 47nm, carry out 650 ℃ of following 5.5 hours annealing in process.Through XRD and XPS test proof, tin dioxide thin film is the N type semiconductor film, has obviously (211) preferred orientation.
Semiconductor transducer gas sensor among the present invention is when reality is used, when promptly in containing the environment of hydrogen, detecting, hydrogen molecule in the environment is decomposed into the H atom under the Pd-Ni catalytic action, the H atom sees through finishing coat and is caught by tin ash, chemical change takes place on the surface, cause the inner charge carrier of tin ash to reduce, electrical property changes, and therefore just can learn the concentration of hydrogen in the environment by measuring the gas sensor resistance sizes.Do not need senser is heated when work, transducer is worked at normal temperatures and pressures.
Hydrogen sensitive element sensitive property test is referring to Fig. 2., 3., 4.
Fig. 2. Pd-Ni composition of layer ratio is to the influence curve of sensitivity in the expression hydrogen sensitive element, and from scheming as seen Ni: Pd (atomic ratio) has the highest sensitivity to hydrogen when 0.09 left and right sides.
Fig. 3. the underlayer temperature of preparation tin ash layer is to the influence curve of hydrogen sensitivity in the expression hydrogen sensitive element, as seen from the figure, underlayer temperature has bigger influence to the structure and the electrical property of tin dioxide thin film, in underlayer temperature was in 290～320 ℃ scope, the tin ash hydrogen-sensitive element had higher sensitivity.
Fig. 4. the expression hydrogen sensitive element is to the sensitivity and the response time curve of different reducing gass.SnO 2 gas-sensitive element is all very high to the sensitivity of ethanol and hydrogen under the room temperature, after the present invention has adopted finishing, can distinguish ethanol and hydrogen effectively, has improved the selectivity to hydrogen greatly.From Fig. 4. as seen, to response time of hydrogen between 20 seconds～30 seconds, sensitivity is greater than 20.
Claims (12)
1. a gas sensor of hydrogen semiconductor transducer is characterized in that, sputter N type tin ash semiconductor film layer on Si (100) substrate, and on the tin ash layer, form Pd-Ni alloy firm layer, the Pd-Ni/SnO that is constituted
2The composite membrane gas sensor.
2. a kind of gas sensor of hydrogen semiconductor transducer according to claim 1 is characterized in that, described N type tin ash semiconductor film layer is a kind of film with (211) preferred orientation.
3. a kind of gas sensor of hydrogen semiconductor transducer according to claim 1 and 2 is characterized in that, described gas sensor of hydrogen semiconductor transducer surface also is provided with a pair of measurement electrode.
4. a kind of gas sensor of hydrogen semiconductor transducer according to claim 1 and 2 is characterized in that, the atomic ratio of Ni and Pd is 0～0.15 in the described Pd-Ni alloy firm layer, and Ni/Pd ≠ 0.
5. a method for preparing gas sensor of hydrogen semiconductor transducer is characterized in that, this method comprises the steps:
A. prepare the tin ash target: the tin ash micro mist is carried out hip treatment; Carry out surface grinding afterwards and handle, promptly obtain the tin ash target;
B. the Si single-chip to (100) face carries out surface treatment;
C. in multi-target magnetic control sputtering equipment, adopt the sputtering power scope of 60～120W, the underlayer temperature scope is controlled to be 25 ℃～400 ℃, and annealing region is controlled to be 100 ℃～700 ℃, at P
O2/ P
ArBe under 1: 1～1: 6 the atmosphere, on the Si single-chip through step b surface-treated (100) face, the tin ash target that uses step a to make is prepared the tin dioxide thin film layer, and sputtering time is 10～30 minutes;
D. adopt cosputtering method sputter Pd-Ni alloy firm layer on the tin ash surface, the thickness of thin layer is at 10～50nm;
E. the composite membrane that at last steps d is made passes through in-situ annealing, and its annealing region is controlled to be 200～800 ℃, and the time is 3～8 hours, promptly makes Pd-Ni/SnO
2The composite membrane gas sensor.
6. the manufacture method of a kind of gas sensor of hydrogen semiconductor transducer according to claim 5, it is characterized in that, this method also comprises step f: masking method is adopted on the surface at the tin dioxide thin film layer, and utilize magnetically controlled sputter method at two Cu electrodes of film two ends preparation, distance between electrodes equals the width of sample.
7. the manufacture method of a kind of gas sensor of hydrogen semiconductor transducer according to claim 6, it is characterized in that, among the described step f, described masking method covers a tin ash layer part for adopt the glass baffle plate in sputter procedure, reserve the position of preparation electrode, prepare measurement electrode at reserved location.
8. the manufacture method of a kind of gas sensor of hydrogen semiconductor transducer according to claim 5 is characterized in that, in described steps d, in the sputter Pd-Ni alloy firm layer, the mass ratio of Ni and Pd is 0～0.15, and Ni/Pd ≠ 0 on the tin ash surface.
9. the manufacture method of a kind of gas sensor of hydrogen semiconductor transducer according to claim 5 is characterized in that, in described step a, the purity of employed tin ash is 99.95%.
10. the manufacture method of a kind of gas sensor of hydrogen semiconductor transducer according to claim 5, it is characterized in that, in described step a, describedly the tin ash micro mist is carried out the hip treatment process be, the tin ash micro mist is carried out 16-20 hour dried under 100-130 ℃ of condition, under 1000-1200 ℃ of condition sintering 3-6 hour again.
11. the manufacture method of a kind of gas sensor of hydrogen semiconductor transducer according to claim 5 is characterized in that, in described step b, described Si single-chip to (100) face carries out the surface-treated step and is, is described Si single-chip is adopted H
2SO
4+ K
2Cr
2O
7Washing lotion was soaked 22～28 hours, was that medium carries out ultrasonic waves for cleaning to the silicon chip that soaked with methyl alcohol, acetone, the ethanol of chemical pure concentration respectively then, obtained clean silicon substrate.
12. the manufacture method of a kind of gas sensor of hydrogen semiconductor transducer according to claim 5 is characterized in that, in described step b, Si sheet washing lotion collocation method is: the H that with mass ratio is 1: 1
2SO
4With K
2Cr
2O
7Mix, the water-bath heating got final product in 0.5～2.5 hour, and the Si sheet cleaning process of soaking is: ultrasonic waves for cleaning is 5～30 minutes in the methyl alcohol, ultrasonic waves for cleaning 5～30 minutes in acetone then, ultrasonic waves for cleaning 5～30 minutes in ethanol at last.
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| CNB2004101027578A CN100373652C (en) | 2004-12-28 | 2004-12-28 | Gas sensor of hydrogen semiconductor transducer, and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101027578A CN100373652C (en) | 2004-12-28 | 2004-12-28 | Gas sensor of hydrogen semiconductor transducer, and preparation method |
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|---|---|
| CN1797806A CN1797806A (en) | 2006-07-05 |
| CN100373652C true CN100373652C (en) | 2008-03-05 |
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ID=36818689
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| CNB2004101027578A Active CN100373652C (en) | 2004-12-28 | 2004-12-28 | Gas sensor of hydrogen semiconductor transducer, and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105326683A (en) * | 2015-10-30 | 2016-02-17 | 付锐涵 | Oral cavity cleaner |
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| US8052932B2 (en) * | 2006-12-22 | 2011-11-08 | Research Triangle Institute | Polymer nanofiber-based electronic nose |
| JP4928865B2 (en) * | 2006-08-11 | 2012-05-09 | 株式会社アツミテック | Hydrogen gas concentration sensor and hydrogen gas concentration measuring device |
| CN101251508B (en) * | 2008-04-01 | 2011-06-22 | 重庆大学 | Method for manufacturing gas sensor for testing hydrogen |
| FI124281B (en) * | 2012-05-02 | 2014-06-13 | Jani Alatainio | leak detector |
| CN102965622A (en) * | 2012-12-19 | 2013-03-13 | 中国科学院微电子研究所 | Preparation method of sensitive film with surface doped with Au or Pt nanocrystal |
| KR101595309B1 (en) * | 2014-11-28 | 2016-02-19 | (주)알에프트론 | Method for forming tin oxide layer using tin metal target |
| CN104568002B (en) * | 2014-12-26 | 2017-05-03 | 昆山工研院新型平板显示技术中心有限公司 | Environmental detection device |
| EP3124962B1 (en) * | 2015-07-29 | 2022-09-28 | Sensirion AG | Gas sensor array and a method for manufacturing thereof |
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| CN107315070A (en) * | 2017-07-05 | 2017-11-03 | 南京航空航天大学 | A kind of structure of ultrasonic wave added type MOS gas sensors |
| US20210231625A1 (en) * | 2018-06-07 | 2021-07-29 | Bar-Ilan University | Hydrogen sensors from organometallic precursors |
| CN108593720A (en) * | 2018-07-10 | 2018-09-28 | 杭州高烯科技有限公司 | A kind of gas molecule detector of quick response |
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| JPH0677012A (en) * | 1992-06-22 | 1994-03-18 | Fuji Xerox Co Ltd | Voltage dependent nonlinear element and manufacture thereof, metal organic paste and liquid crystal indicating device with voltage nonlinear element as driving element, and manufacture thereof |
| CN1475798A (en) * | 2003-07-10 | 2004-02-18 | �Ϻ���ͨ��ѧ | Manufacturing method of stannic dioxide nano sensor |
-
2004
- 2004-12-28 CN CNB2004101027578A patent/CN100373652C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4743881A (en) * | 1985-05-08 | 1988-05-10 | Motorola, Inc. | Ceramic temperature sensor |
| JPH0677012A (en) * | 1992-06-22 | 1994-03-18 | Fuji Xerox Co Ltd | Voltage dependent nonlinear element and manufacture thereof, metal organic paste and liquid crystal indicating device with voltage nonlinear element as driving element, and manufacture thereof |
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Cited By (1)
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| CN105326683A (en) * | 2015-10-30 | 2016-02-17 | 付锐涵 | Oral cavity cleaner |
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| CN1797806A (en) | 2006-07-05 |
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