CN114455948B - 一种煅烧合成材料及其制备方法、负氧离子陶瓷及其制备方法 - Google Patents
一种煅烧合成材料及其制备方法、负氧离子陶瓷及其制备方法 Download PDFInfo
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- CN114455948B CN114455948B CN202011246626.2A CN202011246626A CN114455948B CN 114455948 B CN114455948 B CN 114455948B CN 202011246626 A CN202011246626 A CN 202011246626A CN 114455948 B CN114455948 B CN 114455948B
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- 238000001354 calcination Methods 0.000 title claims abstract description 34
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Abstract
本发明涉及陶瓷技术领域,尤其涉及一种煅烧合成材料及其制备方法、负氧离子陶瓷及其制备方法。所述煅烧合成材料的制备方法包括以下步骤:将表1所示的各制备原料混合,得到混合料;将所述混合料进行煅烧,得到煅烧合成材料;所述煅烧的过程包括:将所述混合料在1280℃保温20分钟,然后降温至1160℃保温2~3小时。将本发明制备的煅烧合成材料用于制备陶瓷,可以产生大量的负氧离子。
Description
技术领域
本发明涉及陶瓷技术领域,尤其涉及一种煅烧合成材料及其制备方法、负氧离子陶瓷及其制备方法。
背景技术
现有技术生产的陶瓷产品如日用瓷(杯、盘、碗、碟)等只能作一般的工具使用,陈设瓷(瓶、罐、艺术品)等只能作摆设和观赏,均不具备产生负氧离子的功能或产生的负氧离子极少。
发明内容
本发明的目的在于提供一种煅烧合成材料及其制备方法、负氧离子陶瓷及其制备方法,将本发明制备的煅烧合成材料用于制备陶瓷,可以产生大量的负氧离子。
为了实现上述发明目的,本发明提供以下技术方案:
本发明提供了一种煅烧合成材料的制备方法,包括以下步骤:
将包括表1所示的各制备原料混合,得到混合料;
将所述混合料进行煅烧,得到煅烧合成材料;
所述煅烧的过程包括:将所述混合料在1280℃保温20分钟,然后降温至1160℃保温2~3小时;
表1煅烧合成材料包括的制备原料
优选的,所述煅烧后还包括将煅烧物进行湿法球磨,然后过300目筛取筛下物,将所述筛下物过滤后烘干,得到煅烧合成材料。
优选的,所述湿法球磨采用的分散介质为水;所述湿法球磨时,煅烧物、研磨球和水的质量比为1:2:0.5。
优选的,所述煅烧合成材料可以产生负氧离子。
本发明提供了一种负氧离子陶瓷,所述负氧离子陶瓷的制备原料包括上述方案所述的煅烧合成材料。
本发明提供了一种上述方案所述负氧离子陶瓷的制备方法,包括以下步骤:
将包括煅烧合成材料、干泥料和水的原料配制成泥料;
将所述泥料进行成型,干燥后得到坯体;
将所述坯体进行烧制,得到负氧离子陶瓷。
优选的,所述煅烧合成材料的质量占所述煅烧合成材料与干泥料总质量的30~70%。
本发明提供了一种如上述方案所述负氧离子陶瓷的制备方法,包括以下步骤:
将包括煅烧合成材料、干泥料和水的原料配制成泥料;
将所述泥料进行成型,干燥后得到坯体;
将煅烧合成材料、干釉料与水配制成釉料;
将所述釉料涂覆到所述坯体的表面,烧制后,得到负氧离子陶瓷。
优选的,制备泥料时,所述煅烧合成材料的质量占所述煅烧合成材料与干泥料总质量的30~70%;
制备釉料时,所述煅烧合成材料的质量占所述煅烧合成材料与干釉料总质量的20~80%。
本发明提供了一种上述方案所述负氧离子陶瓷的制备方法,包括以下步骤:
将煅烧合成材料、干釉料和水配制成釉料;
将所述釉料涂覆到不含煅烧合成材料的坯体表面,烧制后,得到负氧离子陶瓷。
本发明提供了一种煅烧合成材料的制备方法,包括以下步骤:将表1所示的各制备原料混合,得到混合料;将所述混合料进行煅烧,得到煅烧合成材料;所述煅烧的过程包括:将所述混合料在1280℃保温20分钟,然后降温至1160℃保温2~3小时。
本发明通过控制原料的组成及煅烧条件,有利于各种氧化物的完全反应和多晶的生成,煅烧过程中,各种氧化物相互固溶,形成多晶格固溶体。普通陶瓷瓷胎是由莫来石晶体、残余石英晶体组成,不能改变晶界的电性能,从而导致陶瓷产生微弱的负离子,或不能产生负离子。而本发明通过控制煅烧合成材料的原料种类和煅烧条件,得到的煅烧合成材料除了上述晶体组成外,还有半导体晶体、压电晶和光触煤晶体等,这些晶粒边界层的组成结构的变化,显著地改变了晶体的电性能,从而导致煅烧合成材料产生独立的强大静电场;空气中水分子在该静电场的作用下会被电离成带正电氢离子(H+) 和负电的氢氧根离子(OH-)。而氢离子(H+)马上与该煅烧合成材料释放的电离子(e-)相结合而成为氢原子(H)放入空气中,余下的氢氧根离子 (OH-)与周围的水分子结合,成为羟基离子(H2O·OH-)即为负氧离子。
由于本发明的煅烧合成材料可产生负氧离子,因此,将其用于制备负氧离子陶瓷,得到的陶瓷也可产生大量的负氧离子。
具体实施方式
本发明提供了一种煅烧合成材料的制备方法,包括以下步骤:
将包括表1所示的各制备原料混合,得到混合料;
将所述混合料进行煅烧,得到煅烧合成材料;
所述煅烧的过程包括:将所述混合料在1280℃保温20分钟,然后降温至1160℃保温2~3小时;
表1煅烧合成材料包括的制备原料
氧化物 | 质量含量(%) | 氧化物 | 质量含量(%) | 氧化物 | 质量含量(%) |
SiO2 | 0~4.3 | TiO2 | 0.3~3.5 | Nd2O3 | 3~12 |
Al2O3 | 0~1.6 | CoO | 0.1~3 | Bi2O3 | 1~3 |
K2O | 0~0.5 | NiO | 0.2~2 | La2O3 | 12~18 |
Na2O | 0~0.2 | MnO2 | 0.2 | Ag2O | 0.1~0.5 |
B2O3 | 0.2~0.5 | PbO | 0.01~0.1 | Y2O3 | 2~2.5 |
CaO | 12~16 | SnO2 | 0.5~1 | Nb2O5 | 3~7 |
MgO | 5~9 | Sb2O3 | 0.5~1.5 | Sm2O3 | 1~3 |
Li2O | 0.02~0.1 | CdO | 0.8 | GeO2 | 0.4~7 |
ZnO | 0.1~0.3 | In2O3 | 0.001~0.01 | ZrO2 | 1.5~3.5 |
CuO | 0.01~0.07 | P2O5 | 3~5 | Pr6O11 | 1~3 |
Fe2O3 | 0.8~8.5 | CeO2 | 16~27 | WO3 | 0.5~2 |
BaO | 0.05~0.15 | MoO3 | 0.5~1 | SeO2 | 0.1~1 |
SrO | 0.1~1 | V2O5 | 0.01~1.5 |
在本发明中,未经特殊说明,所用原料均为本领域熟知的市售商品。
本发明将包括表1所示的各制备原料混合,得到混合料。
在本发明中,以质量百分含量计,本发明所述煅烧合成材料的制备原料包括0~4.3%的SiO2,优选为1~4%,更优选为2~3%。在本发明的实施例中,具体为0或3%。
本发明所述煅烧合成材料的制备原料包括0~1.6%的Al2O3,优选为 0.5~1.3%,更优选为0.8~1.1%。在本发明的实施例中,具体为0或1%。
本发明所述煅烧合成材料的制备原料包括0~0.5%的K2O,优选为 0.2~0.4%。在本发明的实施例中,具体为0或4%。
本发明所述煅烧合成材料的制备原料包括0~0.2%的Na2O,优选为 0.05~0.15%,更优选为0.1%。在本发明的实施例中,具体为0或0.1%。
本发明所述煅烧合成材料的制备原料包括0.2~0.5%的B2O3,优选为 0.3~0.5%,更优选为0.5%。在本发明的实施例中,具体为0.5%。
本发明所述煅烧合成材料的制备原料包括12~16%的CaO,优选为 13~15%。在本发明的实施例中,具体为14%或16%。
本发明所述煅烧合成材料的制备原料包括5~9%的MgO,优选为6~9%。在本发明的实施例中,具体为6%或9%。
本发明所述煅烧合成材料的制备原料包括0.02~0.1%的Li2O,优选为 0.04~0.1%。在本发明的实施例中,具体为0.02%或0.1%。
本发明所述煅烧合成材料的制备原料包括0.1~0.3%的ZnO,优选为 0.15~0.3%。在本发明的实施例中,具体为0.1%或0.3%。
本发明所述煅烧合成材料的制备原料包括0.01~0.07%的CuO,优选为 0.01~0.06%。在本发明的实施例中,具体为0.01%或0.06%。
本发明所述煅烧合成材料的制备原料包括0.8~8.5%的Fe2O3,优选为 0.8~7%,更优选为1~5%。在本发明的实施例中,具体为0.8%或1.09%。
本发明所述煅烧合成材料的制备原料包括0.05~0.15%的BaO,优选为 0.1~0.15%。在本发明的实施例中,具体为0.1%或0.15%。
本发明所述煅烧合成材料的制备原料包括0.1~1%的SrO,优选为 0.3~0.8%。在本发明的实施例中,具体为0.5%。
本发明所述煅烧合成材料的制备原料包括0.3~3.5%的TiO2,优选为 0.5~2.5%,更优选为0.6~2.0%。在本发明的实施例中,具体为0.6%或1.85%。
本发明所述煅烧合成材料的制备原料包括0.1~3%的CoO,优选为 0.1~2%,更优选为0.1~1%。在本发明的实施例中,具体为0.1%。
本发明所述煅烧合成材料的制备原料包括0.2~2%的NiO,优选为0.2~1%,更优选为0.2~0.5%。
本发明所述煅烧合成材料的制备原料包括0.2%的MnO2。
本发明所述煅烧合成材料的制备原料包括0.01~0.1%的PbO,优选为 0.01~0.05%。在本发明的实施例中,具体为0.01%或0.1%。
本发明所述煅烧合成材料的制备原料包括0.5~1%的SnO2,优选为 0.5~0.8%。在本发明的实施例中,具体为0.5%或1%。
本发明所述煅烧合成材料的制备原料包括0.5~1.5%的Sb2O3,优选为 0.5~1.0%。在本发明的实施例中,具体为0.5%。
本发明所述煅烧合成材料的制备原料包括0.8%的CdO。
本发明所述煅烧合成材料的制备原料包括0.001~0.01%的In2O3,优选为 0.001~0.05%。在本发明的实施例中,具体为0.01%。
本发明所述煅烧合成材料的制备原料包括3~5%的P2O5,优选为3~4%。在本发明的实施例中,具体为3%或4%。
本发明所述煅烧合成材料的制备原料包括16~27%的CeO2,优选为 18~26%,更优选为20~26%。在本发明的实施例中,具体为26%或20%。
本发明所述煅烧合成材料的制备原料包括0.5~1%的MoO3,优选为 0.5~0.8%。在本发明的实施例中,具体为0.8%。
本发明所述煅烧合成材料的制备原料包括0.01~1.5%的V2O5,优选为 0.1~1.0%,更优选为0.3~0.8%。在本发明的实施例中,具体为0.5%。
本发明所述煅烧合成材料的制备原料包括3~12%的Nd2O3,优选为 5~11%,更优选为9~10.5%。在本发明的实施例中,具体为10.39%或9%。
本发明所述煅烧合成材料的制备原料包括1~3%的Bi2O3,优选为1~2%。在本发明的实施例中,具体为1%。
本发明所述煅烧合成材料的制备原料包括12~18%的La2O3,优选为 13~16%。在本发明的实施例中,具体为13%或16%。
本发明所述煅烧合成材料的制备原料包括0.1~0.5%的Ag2O,优选为 0.2~0.5%。在本发明的实施例中,具体为0.1%或0.5%。
本发明所述煅烧合成材料的制备原料包括2~2.5%的Y2O3,优选为2%。
本发明所述煅烧合成材料的制备原料包括3~7%的Nb2O5,优选为3~5%。在本发明的实施例中,具体为3%。
本发明所述煅烧合成材料的制备原料包括1~3%的Sm2O3,优选为 1~2%。在本发明的实施例中,具体为1%。
本发明所述煅烧合成材料的制备原料包括0.4~7%的GeO2,优选为 1~5.5%,更优选为2~4%。在本发明的实施例中,具体为3.4%。
本发明所述煅烧合成材料的制备原料包括1.5~3.5%的ZrO2,优选为 1.5~2.5,更优选为2%。在本发明的实施例中,具体为1.5%或2%。
本发明所述煅烧合成材料的制备原料包括1~3%的Pr6O11,优选为2~3%。在本发明的实施例中,具体为2%或3%。
本发明所述煅烧合成材料的制备原料包括0.5~2%的WO3,优选为 0.5~1.5%,更优选为0.5~1%。在本发明的实施例中,具体为0.5%或1%。
本发明所述煅烧合成材料的制备原料包括0.1~1%的SeO2,优选为 0.5~1%。在本发明的实施例中,具体为1%。
在本发明中,各制备原料的纯度优选>90%。本发明对所述各制备原料的粒径没有特殊要求,采用本领域熟知的粒径即可。
本发明对各制备原料的混合方式没有特殊要求,采用本领域熟知的混合方式即可。在本发明中,所述混合优选为干混。
得到混合料后,本发明将所述混合料进行煅烧,得到煅烧合成材料。
在本发明中,所述煅烧的氛围优选为空气氛围。在本发明中,所述煅烧的过程包括:将所述混合料在1280℃保温20分钟,然后降温至1160℃保温 2~3小时。本发明优选自室温升温至1280℃,所述升温所用的时间优选为10 小时。煅烧后自然冷却至室温。
本发明在所述煅烧过程中,各制备原料发生相互固溶,形成多晶格固溶体。所得煅烧合成材料除了含有莫来石晶体、残余石英晶体外,还有半导体晶体、压电晶和光触煤晶体等,这些晶粒边界层的组成结构的变化,显著地改变了晶体的电性能,从而导致煅烧合成材料产生独立的强大静电场,在静电场的作用下,导致产生负氧离子。
完成所述煅烧后,本发明优选还包括将煅烧物进行湿法球磨,然后过300 目筛取筛下物,将所述筛下物过滤后烘干,得到煅烧合成材料。
在本发明中,所述湿法球磨采用的分散介质优选为水;所述湿法球磨时,煅烧后产物、研磨球和水的质量比优选为1:2:0.5。
本发明对所述湿法球磨的转速没有特殊要求,采用本领域熟知的转速即可。在本发明中,所述湿法球磨的时间优选为4~5小时。
本发明对所述过滤和烘干的过程没有特殊要求,采用本领域熟知的过滤和烘干过程即可。
本发明提供了上述方案所述制备方法制备得到的煅烧合成材料,所述煅烧合成材料可以产生负氧离子。普通陶瓷瓷胎是由莫来石晶体、残余石英晶体组成,不能改变晶界的电性能,从而导致陶瓷产生微弱的负离子,或不能产生负离子。而本发明通过控制煅烧合成材料的原料种类和煅烧条件,得到的煅烧合成材料除了上述晶体组成外,还有半导体晶体、压电晶和光触煤晶体等,这些晶粒边界层的组成结构的变化,显著地改变了晶体的电性能,从而导致煅烧合成材料产生独立的强大静电场;空气中水分子在该静电场的作用下会产生负氧离子。
本发明提供了一种负氧离子陶瓷,所述负氧离子陶瓷的制备原料包括上述方案所述的煅烧合成材料。由于本发明的煅烧合成材料可产生负氧离子,因此,将其用于制备负氧离子陶瓷,得到的陶瓷也可产生大量的负氧离子。
本发明提供了一种上述方案所述负氧离子陶瓷的制备方法,包括以下步骤:
将包括煅烧合成材料、干泥料和水的原料配制成泥料;
将所述泥料进行成型,干燥后得到坯体;
将所述坯体进行烧制,得到负氧离子陶瓷。
本发明将包括煅烧合成材料、干泥料和水的原料配制成泥料。本发明对所述干泥料没有任何特殊的限定,采用本领域熟知的干泥料即可。在本发明中,所述煅烧合成材料的质量优选占煅烧合成材料与干泥料总质量的 30~70%,更优选为40~60%。本发明对所述水的用量没有特殊要求,按照本领域熟知的泥料配制过程选择合适的水的用量即可,泥料的配制过程及水的用量的选择均属于本领域的公知常识,这里不再赘述。
在本发明中,当所述泥料的粘性不足(判断标准为本领域公知)时,制备所述泥料的原料优选还包括有机粘合剂。本发明对所述有机粘合剂的具体种类没有特殊要求,可以包括但不局限于聚乙稀醇、羧甲基纤维素。在本发明中,所述有机粘合剂的用量优选为坯体质量的0.3~0.6%,更优选为 0.4~0.5%。
得到泥料后,本发明将所述泥料进行成型,干燥后得到坯体。
本发明对所述成型和干燥的过程没有特殊要求,选择本领域熟知的成型和干燥过程即可。
得到坯体后,本发明将所述坯体进行烧制,得到负氧离子陶瓷。本发明对所述烧制的过程没有特殊要求,采用本领域熟知的烧制过程即可。在本发明的实施例中,所述烧制的过程优选包括以下阶段:
(1)预热阶段:将所述坯体从室温升温至300℃,升温用时2.5小时;
(2)氧化分解阶段:将第(1)阶段得到的坯体从300℃升温至980℃;升温用时6.5小时;
(3)临界温度阶段:将第(2)阶段得到的坯体从980℃升温至1160℃,升温用时1.5小时;
(4)高温阶段:将第(3)阶段得到的坯体从1160℃升温至1350℃,升温用时3.5小时。
(5)高火保温阶段:将第(4)阶段得到的坯体从1350℃升温至1340℃升温用时20分钟;
(6)冷却阶段:第(5)阶段保温结束后,即可打开窑门20cm,使窑内温度从1340℃急降至900℃时关紧窑门自然冷却100℃以下时,即可从窑内拖出摇车,取下负氧离子陶瓷。
本发明在第(1)阶段对坯体进行预热并排除坯体内残余水分;在第(2) 阶段坯体的质量减轻,强度降低,有机物等塑性物质分解,发生的化学变化有结晶水排除,有机物、硫化物、氧化碳酸盐分解,石英晶型转换等;在第 (3)阶段,氧化反应充分进行,并将气体完全排除;第(4)阶段为高温阶段,常称成瓷阶段或还原焰烧成阶段,在这个阶段,由于液相量增加,气孔率减小,坯体产生较大的收缩,这时候应特别注意窑内烟气与制品间的传热状况,并加以调整,目的是为了缩小制品不同窑位温差,防止由于收缩相差大而导致制品变形或开裂;第(5)阶段的目的是为了减小制品不同部分,同一部分表层及内部温差,从而使制品具有基本相同的成品的理化性能。
采用上述方法制备的负氧离子陶瓷表面不含釉。
本发明提供了另一种上述方案所述负氧离子陶瓷的制备方法,包括以下步骤:
将包括煅烧合成材料、干泥料和水的原料配制成泥料;
将所述泥料进行成型,干燥后得到坯体;
将煅烧合成材料、干釉料与水配制成釉料;
将所述釉料涂覆到所述坯体的表面,烧制后,得到负氧离子陶瓷。
本发明将包括煅烧合成材料、干泥料和水的原料配制成泥料。该步骤同上述方案泥料的配制步骤,这里不再赘述。
得到泥料后,本发明将所述泥料进行成型,干燥后得到坯体。
本发明对所述成型和干燥的过程没有特殊要求,选择本领域熟知的成型和干燥过程即可。
本发明将煅烧合成材料、干釉料与水配制成釉料。本发明对所述干釉料没有任何特殊的限定,采用本领域熟知的干釉料即可。在本发明中,所述煅烧合成材料的质量优选占所述煅烧合成材料与干釉料总质量的20~80%,更优选为30~70%,进一步优选为40~60%。本发明对所述水的用量没有特殊要求,按照本领域熟知的釉料配制过程选择合适的水的用量即可,釉料的配制过程及水的用量的选择均属于本领域的公知常识,这里不再赘述。
得到坯体和釉料后,本发明将所述釉料涂覆到所述坯体的表面,烧制后,得到负氧离子陶瓷。
本发明对所述涂覆的过程和用量没有特殊要求,根据实际需求选择相应的涂覆量和涂覆工艺即可。本发明对所述烧制的过程没有特殊要求,采用本领域熟知的烧制过程即可。在本发明的实施例中,具体的烧制过程在上述方案已经论述,这里不再赘述。
采用该方法制备的负氧离子陶瓷,泥料和釉料中均含有煅烧合成材料,得到的负氧离子陶瓷释放的负氧离子量最大。
本发明还提供了一种上述方案所述负氧离子陶瓷的制备方法,包括以下步骤:
将煅烧合成材料、干釉料和水配制成釉料;
将所述釉料涂覆到不含煅烧合成材料的坯体表面,烧制后,得到负氧离子陶瓷。
本发明将煅烧合成材料、干釉料和水配制成釉料。该步骤同上述方案配制釉料的步骤,这里不再赘述。
得到釉料后,本发明将所述釉料涂覆到不含煅烧合成材料的坯体表面,烧制后,得到负氧离子陶瓷。
本发明对不含煅烧合成材料的坯体的来源没有特殊要求,采用本领域熟知的制备方法制备得到即可。
本发明对所述烧制的过程没有特殊要求,采用本领域熟知的烧制过程即可。在本发明的实施例中,具体的烧制过程在上述方案已经论述,这里不再赘述。
采用该方法制备负氧离子陶瓷,由于泥料中不含煅烧合成材料,只有釉料中含有煅烧合成材料,因此制得的负氧离子陶瓷负氧离子释放量较泥料和釉料中均含有煅烧材料制得的负氧离子陶瓷释放量要低。
下面结合实施例对本发明提供的煅烧合成材料及其制备方法、负氧离子陶瓷及其制备方法进行详细的说明,但是不能把它们理解为对本发明保护范围的限定。
实施例1
按照表2的原料配料,干法混匀,将所得混合料装入窑内,从室温升温至1280℃保温20分钟,再降至1160℃保温2~3小时停火,最后自然冷却,得到煅烧物;
将所述煅烧物用球磨机快速球磨4~5小时,煅烧物、研磨球和水的质量比为1:2:0.5,然后过300目筛取筛下物,将所述筛下物过滤后烘干,得到煅烧合成材料。
表2实施例1煅烧合成材料的制备原料
实施例2
制备方法同实施例1,不同之处在于制备原料见表3。
表3实施例2煅烧合成材料的制备原料
实施例3
负氧离子陶瓷的制备:
将实施例1制备的煅烧合成材料(40%)、干泥料(60%)和水配制成泥料;其中,干泥料的化学成分见表4;
将所述泥料进行成型,干燥后得到坯体;
将所述坯体进行烧制,具体的烧制过程为:
(1)预热阶段:将所述坯体从室温升温至300℃,升温用时2.5小时;
(2)氧化分解阶段:将第(1)阶段得到的坯体从300℃升温至980℃;升温用时6.5小时;
(3)临界温度阶段:将第(2)阶段得到的坯体从980℃升温至1160℃,升温用时1.5小时;
(4)高温阶段:将第(3)阶段得到的坯体从1160℃升温至1350℃,升温用时3.5小时。
(5)高火保温阶段:将第(4)阶段得到的坯体从1350℃升温至1340℃升温用时20分钟;
(6)冷却阶段:第(5)阶段保温结束后,即可打开窑门20cm,使窑内温度从1340℃急降至900℃时关紧窑门自然冷却100℃以下时,即可从窑内拖出摇车,取下陶瓷茶杯,共制备50个。
表4干泥料的化学组成
成分 | SiO2 | Al2O3 | Fe2O3 | CaO | MgO | K2O | Na2O |
质量含量(%) | 66.81 | 27.42 | 0.17 | 1.36 | 0.13 | 3.02 | 1.09 |
对比例1
与实施例3的不同之处仅在于将煅烧合成材料全部用干泥料代替。
采用负氧离子检测仪对实施例3制备的50个陶瓷茶杯和对比例1制备的50个陶瓷茶杯进行负氧离子检测,检测结果显示,对比例1平均每个陶瓷茶杯的负氧离子释放含量,每立方厘米为27个,实施例3平均每个陶瓷茶杯的负氧离子释放含量,每立方厘米为12000个。
实施例4
将实施例2制备的煅烧合成材料(50%)、干釉料(50%)和水配制成釉料;其中,干釉料来源于某厂的釉粉,化学成分见表5;
将所述釉料涂覆到泥料制备的杯子坯体表面(坯体不含煅烧合成材料),烧制后,得到陶瓷。
表5干釉料的化学组成
成分 | SiO2 | Al2O3 | Fe2O3 | CaO | MgO | K2O | Na2O |
质量含量(%) | 68.82 | 14.21 | 0.23 | 10.18 | 0.23 | 5.03 | 1.5 |
对比例2
与实施例4的不同之处仅在于将煅烧合成材料全部用釉料代替。
采用负氧离子检测仪对实施例4制备的50个陶瓷茶杯和对比例1制备的50个陶瓷茶杯进行负氧离子检测,检测结果显示,对比例2平均每个陶瓷茶杯的负氧离子释放含量每立方厘米为80个,实施例4平均每个陶瓷茶杯的负氧离子释放含量,每立方厘米为9000个。
由以上实施例和对比例可知,本发明的煅烧合成材料可以释放负氧离子,将其用于制备得到的陶瓷也会释放大量的负氧离子。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种煅烧合成材料的制备方法,其特征在于,包括以下步骤:
将包括表1所示的各制备原料混合,得到混合料;
将所述混合料进行煅烧,得到煅烧合成材料;
所述煅烧的过程包括:将所述混合料在1280℃保温20分钟,然后降温至1160℃保温2~3小时;
表1煅烧合成材料包括的制备原料
。
2.根据权利要求1所述的制备方法,其特征在于,所述煅烧后还包括将煅烧物进行湿法球磨,然后过300目筛取筛下物,将所述筛下物过滤后烘干,得到煅烧合成材料。
3.根据权利要求2所述的制备方法,其特征在于,所述湿法球磨采用的分散介质为水;所述湿法球磨时,煅烧物、研磨球和水的质量比为1:2:0.5。
4.权利要求1~3任一项所述制备方法制备得到的煅烧合成材料,所述煅烧合成材料可以产生负氧离子。
5.一种负氧离子陶瓷,其特征在于,所述负氧离子陶瓷的制备原料包括权利要求4所述的煅烧合成材料。
6.一种如权利要求5所述负氧离子陶瓷的制备方法,其特征在于,包括以下步骤:
将包括煅烧合成材料、干泥料和水的原料配制成泥料;
将所述泥料进行成型,干燥后得到坯体;
将所述坯体进行烧制,得到负氧离子陶瓷。
7.根据权利要求6所述的制备方法,其特征在于,所述煅烧合成材料的质量占所述煅烧合成材料与干泥料总质量的30~70%。
8.一种如权利要求5所述负氧离子陶瓷的制备方法,其特征在于,包括以下步骤:
将包括煅烧合成材料、干泥料和水的原料配制成泥料;
将所述泥料进行成型,干燥后得到坯体;
将煅烧合成材料、干釉料与水配制成釉料;
将所述釉料涂覆到所述坯体的表面,烧制后,得到负氧离子陶瓷。
9.根据权利要求8所述负氧离子陶瓷的制备方法,其特征在于,制备泥料时,所述煅烧合成材料的质量占所述煅烧合成材料与干泥料总质量的30~70%;
制备釉料时,所述煅烧合成材料的质量占所述煅烧合成材料与干釉料总质量的20~80%。
10.一种如权利要求5所述负氧离子陶瓷的制备方法,其特征在于,包括以下步骤:
将煅烧合成材料、干釉料和水配制成釉料;
将所述釉料涂覆到不含煅烧合成材料的坯体表面,烧制后,得到负氧离子陶瓷。
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