CN114454203B - Manipulator and sucker - Google Patents
Manipulator and sucker Download PDFInfo
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- CN114454203B CN114454203B CN202210147404.8A CN202210147404A CN114454203B CN 114454203 B CN114454203 B CN 114454203B CN 202210147404 A CN202210147404 A CN 202210147404A CN 114454203 B CN114454203 B CN 114454203B
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- conductive layer
- wafer
- metal
- sucker
- chuck
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 230000000670 limiting effect Effects 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 81
- 230000000694 effects Effects 0.000 description 11
- 230000003068 static effect Effects 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
- B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
- B25J15/0616—Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
Landscapes
- Engineering & Computer Science (AREA)
- Robotics (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a manipulator and a sucker, wherein the manipulator comprises a sucker, the sucker is used for sucking a wafer based on the Bernoulli principle, the sucker is provided with a first surface and a second surface which are opposite, the sucker comprises a metal sucker body, the first surface of the metal sucker body is covered with an insulating layer and is provided with a plurality of air holes, the sucker also comprises a plurality of insulating check blocks distributed along the circumferential direction of the metal sucker body, the insulating check blocks are used for limiting the periphery of the wafer, all the insulating check blocks are connected with the metal sucker body through a conducting layer, and the conducting layer is used for contacting with the edge of the wafer; by the configuration, the wafer can be successfully released after the sucker is released in vacuum, and the risk of wafer breakage is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a manipulator and a sucker.
Background
In the wafer processing process, the bernoulli manipulator (chuck) is a manipulator utilizing the bernoulli principle, and after gas (such as inert gas such as nitrogen) sprayed from a gas spraying port of the manipulator encounters a surface (such as an upper surface, or a lower surface, of course, the upper surface is taken as an example) of the disk, the gas rapidly diffuses from the upper surface of the disk, so that the airflow speed of the upper surface of the disk is greater than that of the lower surface, and according to the bernoulli principle, the air pressure of the lower surface of the disk is greater than that of the upper surface of the disk, so that the disk is adsorbed on the bernoulli manipulator.
The Bernoulli manipulator adsorbs the wafer through the Bernoulli principle, puts the wafer on the vacuum chuck that has vacuum adsorption function, and the manipulator releases the wafer. And the vacuum chuck adsorbs the wafer to the vacuum chuck through porous vacuum adsorption. And after the process is finished, the vacuum chuck stops vacuum adsorption, the Bernoulli manipulator adsorbs the wafer, the wafer is taken off from the vacuum chuck, and the wafer is taken out of the process chamber. The Bernoulli manipulator is mainly used for adsorbing wafers with the thickness of less than 200um, and the wafer wafers are fragile, fragile and large in warping degree. At present, a front main body of the Bernoulli arm is made of a metal material, a back main body and a stop block are made of an insulating material, but the insulating material (such as fluorine-containing resin) is weak in antistatic capability, an electrostatic tip accumulation effect is easy to generate, a large amount of static electricity generated in the dissociation process of a wafer and glass is accumulated on the insulating stop block, so that the Bernoulli arm still cannot effectively release a thin wafer after vacuum release, and wafer breakage is caused.
Therefore, there is a need for a chuck and robot that can release a wafer in time to reduce the risk of wafer breakage.
Disclosure of Invention
The invention aims to provide a manipulator and a sucker, which are used for ensuring that the sucker can successfully release a wafer after vacuum release and reducing the risk of wafer breakage.
To achieve at least one of the above objects, the present invention provides a chuck for adsorbing a wafer based on bernoulli's principle, the chuck having opposite first and second surfaces and comprising a metal chuck body, the first surface of the metal chuck body being covered with an insulating layer and being provided with a plurality of air holes, the chuck further comprising a plurality of insulating stoppers distributed circumferentially along the metal chuck body, the insulating stoppers being for limiting the periphery of the wafer, and all the insulating stoppers being connected to the metal chuck body by a conductive layer for contacting an edge of the wafer.
Optionally, the conductive layer includes a first conductive layer and a second conductive layer that are connected to each other, the first conductive layer is connected to the metal chuck body, and the second conductive layer is connected to the insulating stopper and is used for contacting with an edge of the wafer.
Optionally, the first conductive layer is fixed on the second surface, and a material of the metal sucker body is the same as or different from a material of the first conductive layer.
Optionally, the first conductive layer is a strip structure.
Optionally, the insulation block has a connection portion and a main body portion, the connection portion being fixed on the metal sucker body or the insulation layer and extending partially beyond an edge of the metal sucker body; the first surface of the main body part protrudes one step of steps relative to the first surface of the connecting part; an included angle of more than or equal to 90 degrees is formed between the inner side surface of the step and the first surface of the connecting part; the second conductive layer is disposed on the first surface of the main body.
Optionally, the first surface of the insulating layer is provided with a plurality of annular spacers surrounding the air holes, the annular spacers and the air holes are arranged in one-to-one correspondence, at least part of the annular spacers are connected with the connecting portion, and the thickness of the annular spacers is equal to the thickness of the first surface of the insulating layer protruding from the connecting portion.
Optionally, a length of the second conductive layer in a circumferential direction along the wafer is not greater than 2cm, and a length of the second conductive layer in the circumferential direction along the wafer is not less than 1.5cm; the thickness of the conductive layer is 0.1 mm-0.3 mm.
Optionally, the material of the conductive layer is tin-aluminum alloy.
Optionally, the conductive layer includes 20% ± 5% tin by mass.
To achieve the above object, the present invention provides a manipulator including the suction cup as set forth in any one of the above.
In the manipulator and the sucker, the sucker is used for adsorbing a wafer based on the Bernoulli principle and comprises a metal sucker body, wherein the first surface of the metal sucker body is covered with an insulating layer and is provided with a plurality of air holes, the sucker also comprises a plurality of insulating check blocks distributed along the circumferential direction of the metal sucker body, the insulating check blocks are used for limiting the periphery of the wafer, all the insulating check blocks are connected with the metal sucker body through a conducting layer, and the conducting layer is used for contacting with the edge of the wafer. By the configuration, static electricity accumulated on the insulating stop block and/or the wafer can be timely conducted away through the conductive layer, so that the wafer can be successfully released after the sucker is released in vacuum, and the problem of wafer breakage is solved.
In the manipulator and the sucker provided by the invention, the conductive layer comprises a first conductive layer and a second conductive layer which are connected with each other, the first conductive layer is connected with the metal sucker body, and the second conductive layer is connected with the insulating stop block and is used for contacting with the edge of a wafer. The configuration can accurately control the size of the conductive material on the insulation stop block and give consideration to the conductivity and the adsorption performance, and on the other hand, the second conductive layer on the insulation stop block is in contact with the edge of the wafer, so that static electricity in the wafer dissociation process can be directly conducted away through the second conductive layer, thereby avoiding static electricity accumulation on the insulation stop block and further improving the success rate of wafer release; preferably, the whole first surface of the protrusions of all the insulation stoppers is provided with the second conductive layer, so that the conductive effect is better.
In the manipulator and the sucker provided by the invention, the length of the second conductive layer in the circumferential direction of the wafer is not more than 2cm, the length of the second conductive layer in the circumferential direction of the wafer is not less than 1.5cm, and the thickness of the conductive layer is 0.1-0.3 mm. By the arrangement, on one hand, adverse influence of the conductive layer on Bernoulli adsorption effect can be reduced, the sucker can effectively and reliably adsorb wafers, and on the other hand, good conductivity can be ensured.
In the manipulator and the sucker provided by the invention, the material of the conductive layer is preferably tin-aluminum alloy so as to obtain excellent conductive performance, corrosion resistance and fatigue resistance, and simultaneously reduce cost.
In the manipulator and the sucker provided by the invention, the insulation stop block is provided with the connecting part and the main body part, and the connecting part is fixed on the metal sucker body and/or the insulation layer and at least partially exceeds the edge of the metal sucker body; the first surface of the main body part is protruded to a first level step relative to the first surface of the connecting part, and an included angle larger than 90 degrees is formed between the inner side surface of the step and the first surface of the connecting part, so that the inner side surface of the step surface can guide a wafer to enter the inner side of the step of the insulation stop block. By the arrangement, the placement difficulty of the wafer can be reduced through the guidance of the inclined plane, and the damage of the wafer is further reduced.
Drawings
FIG. 1 is a schematic view of a suction cup configuration of the suction cup as viewed from a first surface, provided in accordance with a preferred embodiment of the present invention;
fig. 2 is a schematic view of the chuck structure when the chuck is viewed from the second surface, provided in accordance with a preferred embodiment of the present invention.
Reference numerals are described as follows: ' s of
1-a metal sucker body; 2-an insulating layer; 3-air holes; 4-insulating stoppers; 41-a connection; 42-a body portion; 43-inner side; a 5-conductive layer; 51-a first conductive layer; 52-a second conductive layer; 6-annular spacers.
Detailed Description
In the description of the present invention, it should be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. In the description of the present invention, "not less than" means greater than or equal to the present number; "not greater than" means less than or equal to the present number.
The invention is further described below with reference to the drawings and the preferred embodiments, in which the following embodiments and features of the embodiments can be supplemented or combined with each other without conflict.
Fig. 1 is a schematic perspective view of a suction cup according to a preferred embodiment of the present invention when the suction cup is viewed from a first surface, and fig. 2 is a schematic perspective view of the suction cup according to a preferred embodiment of the present invention when the suction cup is viewed from a second surface. The "first surface" and "second surface" herein are two opposing surfaces of the suction cup, e.g., the first surface may be the opposite surface of the suction cup and the second surface may be the opposite surface of the suction cup, or vice versa.
As shown in fig. 1 and 2, a preferred embodiment of the present invention discloses a chuck for sucking a thin wafer, such as a wafer having a thickness of less than 200 μm, based on the bernoulli principle. The suction cup provided in this embodiment specifically includes a metal suction cup body 1, wherein a first surface of the metal suction cup body 1 is covered with an insulating layer 2 and is provided with a plurality of air holes 3. The number of the air holes 3 is set according to actual needs, and the gas ejected through the plurality of air holes 3 can be used for forming the bernoulli effect to adsorb the wafer. As in the present embodiment, the number of air holes 3 is 6, however, in other embodiments, the number of air holes 3 may be different, which is not required. The material of the metal chuck body 1 is a metal material, preferably a light metal material, more preferably an aluminum alloy material. The material of the insulating layer 2 is generally a nonmetallic material, preferably a resin material, more preferably a fluorine-containing resin material, and has good corrosion resistance. It will be appreciated that the air holes 3 extend through the insulating layer 2 and communicate with the air passages in the metal chuck body 1. The air holes 3 can share one air passage in the metal sucker body 1, and can be respectively provided with mutually independent air passages.
The metal sucker body 1 is further provided with a plurality of circumferentially distributed insulation check blocks 4, the insulation check blocks 4 are used for limiting the periphery of the wafer, so that when the wafer is adsorbed by Bernoulli, the wafer can be further prevented from shaking and shifting, and the quantity of the insulation check blocks 4 can be set according to actual needs. As an example, the number of insulating stoppers 4 is the same as the number of air holes 3. As another embodiment, the number of insulating stoppers 4 is smaller than the number of air holes 3. As in the present embodiment, the number of air holes 3 is 6, and the number of insulating stoppers 4 is 4. The plurality of insulating stoppers 4 are symmetrically disposed around the central axis of the metal suction cup body 1. The insulating stopper 4 is made of a nonmetallic material, preferably a resin material, more preferably a fluorine-containing resin material, and has good corrosion resistance. And each insulating stopper 4 is connected to the metal chuck body 1 through a conductive layer 5, and the conductive layer 5 can also be in contact with the edge of the wafer. So configured, static electricity on the insulating stopper 4 and/or on the wafer can be conducted away in time through the conductive layer 5, so that the wafer can be successfully released after the suction cup is released in vacuum, and the problem of wafer breakage is solved.
As an embodiment, the conductive layer 5 includes a first conductive layer 51 and a second conductive layer 52 that are connected to each other, the first conductive layer 51 is connected to the metal chuck body 1, the second conductive layer 52 is connected to the insulation block 4, and the second conductive layer 52 can contact with an edge of the wafer to avoid static electricity accumulated on the insulation block 4, so as to further improve the success rate of releasing the wafer. Specifically, the second conductive layer 52 on the insulating stopper 4 facing the edge of the wafer (i.e., the side of the wafer) is in contact with the wafer.
As an embodiment, the first conductive layer 51 and the second conductive layer 52 are in a split structure, i.e. are connected to each other after being manufactured and molded separately. As another embodiment, the first conductive layer 51 and the second conductive layer 52 are integrally formed. The integrated conductive layer 5 can better conduct away static electricity accumulated on the insulating stop 4 and/or the wafer, and the conductive effect is better. However, the thickness of the second conductive layer 52 needs to be precisely controlled to achieve both the conductive performance and the vacuum absorption performance, regardless of whether the conductive layer 5 is split or integrated. Because of the small size of the insulating block 4, providing the second conductive layer 52 on such a small insulating block 4 increases the process difficulty, both by ensuring that the second conductive layer 52 is not too thin and by ensuring that the second conductive layer 52 is not too thick; a second conductive layer 52 that is too thick can affect the bernoulli effect, affecting the adsorption performance; while a too thin conductive layer 5 has poor conductive effect.
The length (such as arc length) of the insulation block 4 along the circumferential direction of the wafer is not more than 2cm, and the length (such as arc length) of the insulation block 4 along the circumferential direction of the wafer is not less than 1.5cm. In order to ensure good electrical conductivity, the length (preferably arc length) of the second conductive layer 52 in the circumferential direction along the wafer is preferably not more than 2cm, that is, the second conductive layer 52 has a length as large as possible in the circumferential direction of the wafer, and more preferably the length (preferably arc length) of the second conductive layer 52 in the circumferential direction along the wafer is not less than 1.5cm, so as to achieve both electrical conductivity and adsorption performance.
The manner of disposing the second conductive layer 52 on the insulation block 4 is not particularly limited, and may be, for example, spraying, knife coating, spot coating, or the like, in which the second conductive layer 52 is disposed on at least a part of the first surface of the bump of the insulation block 4, or in which the second conductive layer 52 is disposed on at least a part of the first surface of the bump of the insulation block 4 in an adhesive manner. In any way, it is only necessary to ensure that the second conductive layer 52 cannot easily fall off, so that the second conductive layer 52 can be firmly fixed on the insulation block 4, and further, it is necessary to ensure that the second conductive layer 52 can contact the edge of the wafer.
As an example, the second conductive layer 52 is provided on a part of the first surface of the bump on the insulating stopper 4, so that the second conductive layer 52 can be connected to both the first conductive layer 51 and the edge of the wafer. As another embodiment, the second conductive layer 52 is provided on the entire first surface of the bump on the insulation block 4, so that the conductive effect is better. As in the present embodiment, the entire first surface of the protrusion of the insulation block 4 is provided with the second conductive layer 52. Preferably, the second conductive layer 52 is provided on the entire first surface of the protrusions of all the insulation stoppers 4, so that the conductive effect is better.
As an alternative, the first conductive layer 51 is fixed on the second surface of the metal chuck body 1 by welding, bonding or coating, and the material of the metal chuck body 1 and the material of the first conductive layer 51 may be the same or different. In this embodiment, the metal chuck body 1 is made of aluminum alloy, and the conductive layer 5 is made of tin-aluminum alloy.
Preferably, the material of the conductive layer 5 is tin-aluminum alloy to obtain excellent conductive performance, corrosion resistance and fatigue resistance, while reducing cost. Of course, the material of the conductive layer 5 may also be other metal conductive materials, such as copper, aluminum, silver, etc. More preferably, the conductive layer 5 includes 20% ± 5% tin by mass and the remaining component is aluminum, so that the conductive layer 5 is superior in conductivity, corrosion resistance and fatigue resistance.
A part of the first conductive layer 51 is fixed on the second surface of the metal chuck body 1, and the other part is fixedly connected with the second conductive layer 52. Preferably, the first conductive layer 51 is welded or adhered to the second surface of the metal chuck body 1. The first conductive layer 51 is not too large in size to affect the original performance of the chuck. As a preferred embodiment, the first conductive layer 51 is an elongated structure, for example, one end of the first conductive layer 51 is welded or adhered to the second surface of the metal chuck body 1, and the other end is connected to the second conductive layer 52. The first conductive layer 51 is provided as an elongated sheet, does not excessively increase the weight of the suction cup, and is not easily interfered with an external structure.
The thickness of the conductive layer 5 is preferably 0.1mm to 0.3mm, more preferably 0.2mm, and the conductive layer can also have better conductivity and reduce the risk of chipping under the condition of having vacuum adsorption performance of the sucker. As a preferred embodiment, the first conductive layer 51 is a conductive sheet having a length of 50mm, a width of 8mm, and a thickness of 0.2mm. As a preferred embodiment, the second conductive layer 52 is a conductive coating having a length of 20mm, a width of 5mm, and a thickness of 0.2mm.
Referring to fig. 1, a plurality of annular spacers 6 are disposed on the first surface of the insulating layer 2, and one annular spacer 6 is disposed corresponding to each air hole 3, and the annular spacers 6 are disposed around the air holes 3. The annular spacer 6 is mainly made of a fluorine-containing rubber material. The annular spacer 6 may be provided by being bonded to the first surface of the insulating layer 2 by an adhesive. The annular spacer 6 is used for isolating the insulating layer 2 and the wafer, is convenient for the wafer to be better adsorbed and is easier to take down, and the annular spacer 6 has a certain friction coefficient, can prevent the wafer from sliding and shifting, and plays a certain buffering role. In this embodiment, the material of the metal sucker body 1 is aluminum alloy, the material of the insulation block 4 and the insulation layer 2 is fluorine-containing resin, and the material of the annular spacer 6 is fluorine-containing rubber, such as fluorine-containing silica gel.
With continued reference to fig. 1 and 2, the insulation block 4 has a connecting portion 41 and a main portion 42, wherein the connecting portion 41 is fixed to the metal chuck body 1 and/or the insulation layer 2 and extends at least partially beyond the edge of the metal chuck body 1 to connect the main portion 42. The connection portion 41 may be directly fixed on the first surface of the insulating layer 2 or fixedly connected with a side surface of the insulating layer or a side surface of the metal chuck body 1. The connection portion 41 may be integrally formed with the insulating layer 2 or separately formed. The main body 42 is provided on a structure where the connection portion 41 extends beyond the metal suction cup body 1. The connecting portion 41 of the embodiment of the present invention may be screwed to the first surface of the insulating layer 2. It should be understood that the main body 42 is a protrusion of the insulation block 4. The first surface (i.e. the top surface of the protrusion) of the main body 42 protrudes a step relative to the first surface of the connecting portion 41, and further, the inner side surface 43 (i.e. the surface opposite to the edge of the wafer) of the step forms an included angle greater than or equal to 90 ° with the first surface of the connecting portion 41, so that the inner side surface 43 of the step is an inclined surface inclined towards the direction away from the center of the suction cup, and thus, the inner side surface 43 of the step can guide the wafer to enter the inner side of the insulation stop 4, thereby reducing the difficulty in placing the wafer through the inclined surface and further reducing the damage of the wafer. The inner side 43 of the step preferably matches the angle of inclination of the wafer side. Further, the included angle of the inner side surface 43 of the step with respect to the first surface of the connecting portion 41 is not greater than 145 °, so that the step has a better guiding effect and simultaneously has a blocking effect on the wafer. Preferably, the included angle is 95 ° to 145 °, such as 95 °, 110 °, 115 °, 120 °, 125 °, 130 °, 135 °, 140 °, or 145 °.
As an alternative, at least part of the annular spacer 6 is connected to the connecting portion 41 of the insulating stopper 4, and the connection manner of the two is not limited, and is preferably integrally connected; and the thickness of the annular spacer 6 is equal to the thickness of the first surface of the connection portion 41 protruding from the insulating layer 2, so as to avoid the portion of the wafer resting on the connection portion 41 from being lifted.
The wafer edge of the embodiment of the present invention is lapped on the connection portion 41 of the insulation block 4, and the second conductive layer 52 is disposed on the first surface of the main body portion 42 of the insulation block 4. If the second conductive layer 52 on the main body 42 is too thick, the entire wafer is too far from the air holes 3, and the vacuum negative pressure generated cannot adsorb the wafer, so the thickness of the second conductive layer 52 cannot be too thick, preferably 0.1mm to 0.3mm, more preferably 0.2mm.
Further, the embodiment of the invention also provides a manipulator which comprises the sucker provided by the embodiment of the invention. Further, the manipulator further comprises a manipulator body connected with the sucker, and the manipulator body has a plurality of degrees of freedom and can drive the sucker to move. Preferably, the sucker and the manipulator body are connected through a turnover mechanism so as to realize 180-degree turnover of the sucker.
It should be noted that, in this embodiment, the shape of the suction cup is not limited to the closed ring shape shown in the drawings, but may be an open fork structure.
In summary, the mechanical arm and the sucker provided by the invention can timely guide static electricity accumulated on the insulating stop block and/or the wafer through the conductive layer, so that the sucker can successfully release the wafer after vacuum release, and the problem of wafer breakage is solved, thereby providing the Bernoulli arm capable of preventing static electricity. In addition, after practical test verification, the sucking disc provided by the embodiment can effectively reduce the phenomenon of sticking due to static accumulation in the wafer dissociation process, almost the sticking rate can be reduced to 0%, the electric conduction effect is good, the breaking rate of the wafer is effectively reduced, and the manufacturing cost is reduced.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the present invention.
Claims (9)
1. A chuck for adsorbing a wafer based on bernoulli's principle, wherein the chuck has a first surface and a second surface opposite to each other, the chuck comprises a metal chuck body, the first surface of the metal chuck body is covered with an insulating layer and is provided with a plurality of air holes, the chuck further comprises a plurality of insulating stoppers distributed along the circumference of the metal chuck body, the insulating stoppers are used for limiting the periphery of the wafer, all the insulating stoppers are connected with the metal chuck body through a conductive layer, and the conductive layer is used for contacting with the edge of the wafer; the conductive layer comprises a first conductive layer and a second conductive layer which are connected with each other, the first conductive layer is connected with the metal sucker body, and the second conductive layer is arranged on the insulation stop block and is used for being in contact with the edge of the wafer.
2. The suction cup as set forth in claim 1 wherein said first conductive layer is secured to said second surface and wherein said metal suction cup body is of the same or different material as said first conductive layer.
3. The suction cup as set forth in claim 2 wherein the first conductive layer is an elongated structure.
4. The suction cup as set forth in claim 1 wherein said insulation block has a connecting portion and a body portion; the connecting part is fixed on the metal sucker body and/or the insulating layer and at least partially exceeds the edge of the metal sucker body; the first surface of the main body part protrudes one step of steps relative to the first surface of the connecting part; an included angle of more than or equal to 90 degrees is formed between the inner side surface of the step and the first surface of the connecting part; the second conductive layer is disposed on the first surface of the main body.
5. The suction cup as claimed in claim 4, wherein a plurality of annular spacers are disposed around the air holes on the first surface of the insulating layer, the plurality of annular spacers are disposed in one-to-one correspondence with the plurality of air holes, at least a portion of the annular spacers are connected to the connection portion, and the thickness of the annular spacers is equal to the thickness of the connection portion protruding from the first surface of the insulating layer.
6. The chuck according to any one of claims 1 to 5, wherein a length of the second conductive layer in a circumferential direction along the wafer is not more than 2cm, and a length of the second conductive layer in a circumferential direction along the wafer is not less than 1.5cm; the thickness of the conductive layer is 0.1 mm-0.3 mm.
7. The suction cup as set forth in any one of claims 1-5, wherein the conductive layer is made of tin-aluminum alloy.
8. The chuck of claim 7, wherein the conductive layer comprises 20% ± 5% tin by mass.
9. A manipulator comprising a suction cup as claimed in any one of claims 1-8.
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| CN202210147404.8A CN114454203B (en) | 2022-02-17 | 2022-02-17 | Manipulator and sucker |
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| CN202210147404.8A CN114454203B (en) | 2022-02-17 | 2022-02-17 | Manipulator and sucker |
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| CN114454203B true CN114454203B (en) | 2023-12-29 |
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| CN110479897A (en) * | 2019-09-03 | 2019-11-22 | 湖北天佳日用品有限公司 | Punching machine sucker manipulator |
| CN212695134U (en) * | 2020-07-07 | 2021-03-12 | 北京华卓精科科技股份有限公司 | End effector for adsorbing wafer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7418924B2 (en) * | 2020-05-13 | 2024-01-22 | 株式会社ディスコ | Retention mechanism |
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| JP2000100920A (en) * | 1998-09-18 | 2000-04-07 | Hitachi Ltd | Wafer holding device |
| JP2005142462A (en) * | 2003-11-10 | 2005-06-02 | Disco Abrasive Syst Ltd | Wafer carrying mechanism |
| CN101101396A (en) * | 2006-07-03 | 2008-01-09 | 元太科技工业股份有限公司 | Glass substrate carrier for preventing static congregation |
| CN102201354A (en) * | 2010-03-23 | 2011-09-28 | 日东电工株式会社 | Workpiece transport method and workpiece transport device |
| CN203622854U (en) * | 2013-10-25 | 2014-06-04 | 延锋汽车饰件系统有限公司 | Static electricity removal vacuum chuck |
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|---|---|
| CN114454203A (en) | 2022-05-10 |
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