CN114447138A - Single-row carrier photodetector - Google Patents

Single-row carrier photodetector Download PDF

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CN114447138A
CN114447138A CN202111539713.1A CN202111539713A CN114447138A CN 114447138 A CN114447138 A CN 114447138A CN 202111539713 A CN202111539713 A CN 202111539713A CN 114447138 A CN114447138 A CN 114447138A
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layer
target
doping
row carrier
type contact
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黄永清
支华云
肖朝政
杜嘉薇
刘凯
段晓峰
蔡世伟
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Beijing University of Posts and Telecommunications
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP

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Abstract

The invention provides a single-row carrier photodetector which comprises a substrate and a plurality of epitaxial layers arranged on the top surface of the substrate along the central axial direction, wherein the plurality of epitaxial layers comprise absorption layers, and a target electric field is generated based on the arrangement of a radial doping mode on the absorption layers. According to the single-row carrier photodetector provided by the invention, the radial doping mode is set for the absorption layer, the absorption layer structure with radial partial depletion is obtained, and the internal electric field of the device is improved to be the target electric field. The transport rate of carriers can be improved, and the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, so that the response capability of the device is improved.

Description

Single-row carrier photodetector
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a single-row carrier photodetector.
Background
In an optical communication system, a photodetector is a device that converts an optical signal into an electrical signal using the photoelectric effect. The performance indexes of the optical detector mainly comprise: responsivity (quantum efficiency), 3dB bandwidth, output saturation power, etc. Currently, common photodetectors are mainly classified into a conventional PIN photodetector (PIN-PD), an Avalanche Photodetector (APD), a single-row Carrier photodetector (UTC-PD), and the like.
The UTC-PD only uses electrons as carriers, so that the transport time of the carriers is reduced to a certain extent, the space charge effect is weakened, and compared with the response speed of the traditional PIN-PD, the UTC-PD response speed is greatly improved by the characteristic. Therefore, UTC-PD is advantageous in detection of high frequency signals and terahertz (THz, 1THz — 1012Hz) signals. However, reducing the thickness of the UTC-PD absorber layer can effectively increase the response speed of the photodetector, and on the other hand, the responsivity of the photodetector also decreases with the decrease of the thickness of the absorber layer. Therefore, the UTC-PD in the prior art cannot simultaneously achieve both responsivity and response speed.
Disclosure of Invention
The invention provides a single-row carrier optical detector, which is used for solving the defect that UTC-PD in the prior art cannot simultaneously give consideration to both responsivity and response speed, and improving the 3dB bandwidth of a device on the premise of not sacrificing the responsivity of the single-row carrier optical detector.
The invention provides a single-row carrier photodetector which comprises a substrate and a plurality of epitaxial layers arranged on the top surface of the substrate along the central axial direction, wherein the plurality of epitaxial layers comprise absorption layers, and a target electric field is generated based on the arrangement of a radial doping mode on the absorption layers.
According to the single-row carrier photodetector provided by the invention, the plurality of epitaxial layers further comprise an N electrode, an N-type contact layer, a collection layer, a space layer, a P-type contact layer and a P electrode in contact with the P-type contact layer;
the N-type contact layer, the collection layer, the space layer, the absorption layer, the P-type contact layer and the P electrode which are sequentially stacked form a columnar mesa structure;
the N electrode is axially sleeved on the columnar table-board structure along the center and is arranged on the upper surface of the substrate.
According to the single-row carrier photodetector provided by the invention, the target doping mode comprises one of a Gaussian doping mode and a radial step doping mode. According to the single-row carrier photodetector provided by the invention, the non-uniform doping distribution corresponding to the target doping mode is as follows:
Figure BDA0003413623910000021
wherein N (x) is the doping concentration of the absorption layer, N is the peak concentration, d is the position of the peak concentration, x is the length from the position of the peak concentration, and char is the characteristic length.
According to the present invention there is provided a single-row carrier photodetector,
generating a target electric field based on setting a radial doping pattern to the absorption layer, comprising:
determining a target peak concentration based on the size information of the columnar mesa structure;
simulating the non-uniform doping distribution based on the target peak concentration to obtain a target characteristic length;
and setting a target doping distribution based on the target peak concentration and the target characteristic length, and generating the target electric field in the absorption layer.
According to the single-row carrier photodetector provided by the invention, the material of the absorption layer comprises one or more of GaAs, InGaAs and AlGaAs.
According to the single-row carrier photodetector provided by the invention, the material of the N-type contact layer comprises one or more of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb and InGaAlN.
According to the single-row carrier photodetector provided by the invention, the material of the P type contact layer comprises one or more of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb and InGaAlN.
According to the single-row carrier photodetector provided by the invention, the material of the space layer comprises one or more of InGaAs, InGaAsP and InP.
According to the single-row carrier photodetector provided by the invention, an unintentional doping mode is set on the space layer.
According to the single-row carrier photodetector provided by the invention, the radial doping mode is set for the absorption layer, the absorption layer structure with radial partial depletion is obtained, and the internal electric field of the device is improved to be the target electric field. The transport rate of carriers can be improved, and the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, so that the response capability of the device is improved.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is one of the schematic structural diagrams of a single-row carrier photodetector provided by the present invention;
FIG. 2 is a second schematic structural diagram of a single-row carrier photodetector provided by the present invention;
FIG. 3 is one of the schematic diagrams of simulation results of a single-row carrier photodetector provided by the present invention;
FIG. 4 is a second schematic diagram showing simulation results of the single-row carrier photodetector provided by the present invention;
FIG. 5 is a third schematic diagram showing simulation results of the single-row carrier photodetector provided by the present invention;
FIG. 6 is a fourth illustration of simulation results of a single-row carrier photodetector provided by the present invention;
fig. 7 is a fifth illustration of simulation results of the single-row carrier photodetector provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Moreover, the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, the type, number and ratio of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
Fig. 1 is one of the schematic structural diagrams of the single-row carrier photodetector provided by the present invention. As shown in fig. 1, the single-row carrier photodetector provided by the embodiment of the present invention includes a substrate 110 and a plurality of epitaxial layers 120 disposed on a top surface of the substrate 110 along a central axis direction, wherein the plurality of epitaxial layers 120 includes an absorption layer 121, and a non-uniform doping profile is disposed on the absorption layer 121 based on a radial doping mode.
The kind of the photodetector formed differs depending on the kind of each epitaxial layer 120 and the relative position with respect to the other epitaxial layers 120 and the absorption layer 121.
Illustratively, the photodetector may be a conventional PIN photodiode, i.e., the plurality of epitaxial layers 120 further includes an N-type contact layer and a P-type contact layer, and the N-type contact layer, the absorption layer 121 and the P-type contact layer are arranged from bottom to top along the central axis of the substrate 110
Preferably, the photodetector is a single-row carrier photodetector, the plurality of epitaxial layers 120 further includes an N-type contact layer and a collection layer, and the N-type contact layer, the collection layer and the absorption layer 121 are arranged from bottom to top along a central axis of the substrate 110.
Specifically, the epitaxial layer 120 in the single-row carrier photodetector may include an absorption layer 121, and the doping pattern of the absorption layer 121 is set to a radial doping pattern to change the uniformly distributed electric field of the absorption layer to a target electric field.
And an absorption layer 121 for absorbing light to generate carriers.
The target electric field means that the absorption layer generates an electric field with non-uniform distribution properties after a radial doping mode is set. A target electric field for carrying carriers generated by the absorption layer 121. The embodiment of the present invention does not specifically limit the degree of non-uniformity of the target electric field.
The target electric field is divided into two regions according to different degrees of heavy doping and light doping, wherein:
the heavily doped region of the target electric field, i.e. the central region of the absorption layer, is more doped and the corresponding electric field strength is less.
The lightly doped region of the target electric field, i.e. the edge region of the absorption layer, has a smaller doping degree and a larger corresponding electric field strength. The carriers in the edge region can be effectively shifted.
The shape of the heavily doped region and the lightly doped region of the target electric field is not particularly limited in the embodiments of the present invention.
Optionally, the heavily doped region and the lightly doped region may be in regular patterns, and are combined into a region of the completed target electric field through the overlapped edges of the two regions.
Alternatively, the heavily doped region may include a plurality of sub-regions, and the plurality of sub-regions are uniformly distributed on the periphery of the lightly doped region.
In the prior art, the absorption layer 121 has an electric field with a uniform intensity distribution, only the carriers in the central region can move, and the carriers in the remaining regions can be accumulated.
By changing the electric field distribution in the absorption layer 121, the electric field intensity in the region where the carriers are accumulated can be increased, so that the carriers in the region can effectively drift in the absorption layer, and the accumulation of the carriers can be reduced.
According to the embodiment of the invention, the radial doping mode is set for the absorption layer, the absorption layer structure with the radial partial depletion is obtained, and the electric field in the device is improved into the target electric field. The transport rate of carriers can be improved, and the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, so that the response capability of the device is improved.
Fig. 2 is a second schematic structural diagram of the single-row carrier photodetector provided by the present invention. As shown in fig. 2, on the basis of any of the above embodiments, the plurality of epitaxial layers further includes an N electrode 202, an N-type contact layer 203, a collection layer 204, a space layer 205, a P-type contact layer 207, and a P electrode 208 in contact with the P-type contact layer 207.
Specifically, the epitaxial layer of the single-row carrier photodetector further includes an N-electrode 202, an N-type contact layer 203, a collection layer 204, a space layer 205, a P-type contact layer 207, and a P-electrode 208.
Wherein:
the N electrode 202 uses an N-type semiconductor as a photo anode, and performs an oxidation reaction.
The N-type contact layer 203 is formed of indium gallium arsenide (InGaAs) material as an etch stop layer. The etch stop layer ensures that the etch stops relatively uniformly in the etch stop layer.
The collector layer 204 is made of indium phosphide (InP) material.
Preferably, collection layer 204 includes an InP sub-collection layer 204-1 and an InP collection layer 204-2.
Wherein:
and an InP sub-collector layer 204-1 for blocking diffusion of dopants in the N-type contact layer 203 into the InP collector layer 204-2.
And an InP collection layer 204-2 for accelerating the drift of carriers.
And a space layer 205 for regulating the electric field generated by the InP collection layer 204-2.
The P-type contact layer 207 is made of indium gallium arsenide phosphide (InGaAsP) and/or InGaAs material, and is in contact with the P-electrode 208.
Preferably, the P-type contact layer 207 includes an InGaAsP diffusion barrier layer 207-1 and an InGaAs contact layer 207-2. Wherein:
InGaAsP diffusion barrier layer 207-1 for blocking electron back diffusion
InGaAs contact layer 207-2 for collecting photo-generated holes.
The P-electrode 208 is a P-type semiconductor as a photocathode and performs a reduction reaction.
Preferably, the substrate 201, the N electrode 202, the N-type contact layer 203, the InP sub-collection layer 204-1, the InP collection layer 204-2, the space layer 205, the absorption layer 206, the InGaAsP diffusion barrier layer 207-1, the InGaAs contact layer 207-2 and the P electrode 208 are arranged in size and arrangement position, so that the light detectors with different structural types can be generated. The structural type of the optical detector is not particularly limited in the embodiments of the present invention.
The N-type contact layer 203, the collection layer 204, the space layer 205, the absorption layer 206, the P-type contact layer 207, and the P-electrode 208, which are sequentially stacked, collectively constitute a pillar mesa structure.
Specifically, the substrate 201 is set to be a plane with a slightly larger radius as a base of the device, and the N-type contact layer 203, the collection layer 204, the space layer 205, the P-type contact layer 207 and the P-electrode 208 are set to be in the same size and shape, and are sequentially stacked from bottom to top to form a columnar mesa structure.
Preferably, an N-type contact layer 203, an InP sub-collection layer 204-1, an InP collection layer 204-2, a space layer 205, an absorption layer 206, an InGaAsP diffusion barrier layer 207-1, an InGaAs contact layer 207-2 and a P-electrode 208 with the same radius are stacked from bottom to top along the central axis of a circle in sequence to form an active region, and the active region is placed on the upper surface of the substrate 201.
The N electrode 202 is axially sleeved on the columnar mesa structure along the center and is disposed on the upper surface of the substrate.
Specifically, the N electrode 202 is arranged in a ring shape, and is uniformly sleeved outside the active region in the columnar mesa structure along the central axis, so that the distance from any point on the inner wall of the N electrode 202 to the outer wall of the active region is equal.
Preferably, the N electrode 202 is circular ring-shaped, and the inner circle radius is slightly larger than the radius of the active region, and the outer circle radius is slightly smaller than the radius of the substrate 201.
An active region with a diameter of 10 μm is formed by stacking an N-type contact layer 203, an InP sub-collection layer 204-1, an InP collection layer 204-2, a space layer 205, an absorption layer 206, an InGaAsP diffusion barrier layer 207-1, an InGaAs contact layer 207-2 and a P electrode 208 in this order from bottom to top along the central axis of a circle.
It is understood that the inner diameter of the N-electrode 202 is slightly larger than 10 μm, and the diameter of the substrate 201 is larger than the outer diameter of the N-electrode 202.
The embodiment of the invention forms a device with a cylindrical mesa structure based on the substrate, the N electrode, the N-type contact layer, the collecting layer, the space layer, the absorbing layer, the P-type contact layer and the P electrode, and can enable the device to have smoothness. And further, an absorption layer structure with a partially depleted radial part is obtained, and the internal electric field of the device is improved to a target electric field. The transport rate of carriers can be improved, and the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, so that the response capability of the device is improved.
On the basis of any of the above embodiments, the target doping pattern comprises one of a gaussian doping pattern and a radial step doping pattern.
Specifically, based on the target doping pattern, the center of the absorber layer is adjusted to be heavily doped and the edge of the absorber layer is adjusted to be lightly doped, so that the absorber layer has a non-uniform doping profile.
The target doping mode is not particularly limited in the embodiments of the present invention.
Alternatively, the target doping pattern may be a gaussian doping pattern, i.e. the corresponding profile has a continuous, smooth characteristic.
Alternatively, the target doping pattern may be a radial step doping pattern, i.e. the corresponding profile has a continuous characteristic at intervals.
According to the embodiment of the invention, the absorption layer can be adjusted to be non-uniformly distributed based on the target doping mode being set to be the Gaussian doping mode and/or the radial step doping mode. The carrier transport efficiency of the edge region can be improved, the carrier transport efficiency of the absorption layer is further improved, the 3dB bandwidth of the device can be effectively improved on the premise that the responsivity of the device is not sacrificed, and therefore the response capability of the device is improved.
On the basis of any of the above embodiments, the non-uniform doping distribution corresponding to the target doping pattern is:
Figure BDA0003413623910000091
wherein N (x) is the doping concentration of the absorption layer, N is the peak concentration, d is the position where the peak concentration is located, x is the length from the position where the peak concentration is located, and char is the characteristic length.
Specifically, in the absorption layer of the single-row carrier photodetector, different target doping modes are set, so that different non-uniform stray distributions can be generated correspondingly.
The embodiment of the invention does not specifically limit the different non-uniform stray distributions corresponding to different target doping modes.
Preferably, in case that the target doping pattern is set to a gaussian doping pattern, the gaussian distribution to which the corresponding non-uniform doping distribution obeys is as follows:
Figure BDA0003413623910000092
wherein N (x) represents the doping concentration at each position in the absorption layer, N is the corresponding peak concentration in the Gaussian distribution, d is the position where the peak concentration is located, x is the length of the distance d, char is the characteristic length whose value is subject to the standard deviation of the Gaussian doping distribution
Figure BDA0003413623910000093
And (4) doubling.
By changing different N and char, different doping concentration profiles can be obtained.
According to the embodiment of the invention, based on the target doping mode, the corresponding non-uniform doping distribution is obtained, the carrier transport efficiency of the edge region can be improved to different degrees, the carrier transport efficiency of the absorption layer is further improved, the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, and the response capability of the device is further improved.
On the basis of any one of the above embodiments, generating the target electric field based on setting the radial doping pattern to the absorption layer includes: based on the size information of the columnar mesa structure, a target peak concentration is determined.
Specifically, the radial central position of the absorption layer set is taken as a doping center, a Gaussian doping mode is adopted, and different non-uniform doping distribution conditions are obtained by setting different peak concentrations and characteristic lengths.
Specifically, according to the device size information corresponding to the single-row carrier photodetector, a proper value is selected as the target peak concentration.
The values of the embodiments of the present invention are not particularly limited.
Preferably, taking the diameter of the columnar mesa structure formed by the single-row carrier photodetector as an example as 10 μm, the peak concentration is 1 × 10 in the peak concentration range18～1×1019cm3Within, and will select 1 × 1018cm3As the target peak concentration.
And simulating the non-uniform doping distribution based on the target peak concentration to obtain the target characteristic length.
Specifically, the distribution function of the absorption layer subjected to Gaussian doping is set
Figure BDA0003413623910000101
And simulating different doping modes meeting Gaussian distribution by commercial simulation software Atlas according to the target peak concentration of the absorption layer doping complying with the Gaussian distribution so as to obtain the target characteristic length.
And setting a target doping distribution based on the target peak concentration and the target characteristic length, and generating the target electric field in the absorption layer.
In particular, in different situationsUnder the condition of selecting corresponding target peak value concentration and target characteristic length, substituting into
Figure BDA0003413623910000102
To generate a suitable target electric field.
The embodiment of the invention does not specifically limit the simulation process.
The embodiment of the present invention does not specifically limit the process of acquiring the target characteristic length.
Exemplarily, fig. 3 is one of simulation results of the single-row carrier photodetector provided by the present invention. As shown in fig. 3, the peak concentration at the determined doping center position is 1 × 1018/cm3In the case of (2), the characteristic lengths char are set to 3, 4, 5, and 6, respectively. The doping concentration distribution under different char values can be obtained.
Subjecting to different peak concentration and characteristic length numerical value combinations
Figure BDA0003413623910000111
And the correspondingly generated non-uniform doping distribution and the device response speed under the distribution are counted and compared to obtain the value range of the doping peak value N which is 1 multiplied by 1018/cm3～1×1019/cm3The value range of the characteristic length char is between 3 and 6 (mum).
Exemplarily, fig. 4 is a second schematic diagram of simulation results of the single-row carrier photodetector provided by the present invention. Fig. 5 is a third schematic diagram of simulation results of the single-row carrier photodetector provided by the present invention. Fig. 6 is a fourth schematic diagram of simulation results of the single-row carrier photodetector provided by the present invention. Fig. 7 is a fifth illustration of simulation results of the single-row carrier photodetector provided by the present invention.
As shown in fig. 4, the device electric field varies with the device doping pattern, and the device fringe field strength is higher as the feature length char is smaller. Too high an electric field does not favor electron transport and too low doping in the edge regions of the device does not favor hole relaxation by the absorber layer. Therefore, the peak concentration and the characteristic length need to be controlled to ensure the carrier transport in the device.
Illustratively, the absorption layer edge field strength is about 5 × 10 at char ═ 43V/cm, and at char 3(μm), the absorption layer edge field strength soaks to 3X 104V/cm。
As shown in fig. 5, the corresponding electron transport speed when char ═ 3(μm) is lower than that when char ═ 4(μm).
As shown in fig. 6, the overall 3dB bandwidth improvement is most significant when char is 4(μm).
It should be further noted that, commercial software Atlas is adopted to simulate the relationship between the electric field strength of the UTC-PD and the doping position in four radial gaussian doping modes with different characteristic lengths of the absorption layer, as shown in fig. 4, the 3dB bandwidth of the UTC-PD changes with the incident signal strength, as shown in fig. 6, and as can be seen from fig. 4, the radial electric field of the device can be effectively improved by setting the characteristic length of the radial gaussian doping, so that the carrier transport of the device is adjusted, and the carrier accumulation can be effectively prevented. It can be seen from fig. 6 that the improvement of 3dB bandwidth of the device is different due to different feature lengths, when the feature length is larger, the 3dB bandwidth performance of the device under high light intensity is degraded, and the 3dB bandwidth and the uniform doping mode are almost the same.
As shown in fig. 7, the responsivity and the output current of the device are not affected by the four doping methods with different characteristic lengths, and the responsivity and the saturation current of the four doping methods with different characteristic lengths are the same as the uniform doping method.
As can be seen from fig. 4-6, when the characteristic length char is increased, the doping concentration at the edge of the device is increased, and the fringe electric field is in a decreased state, compared with the conventional UTC-PD with uniformly doped absorption layer, when the characteristic length char is about 4(μm), the device fringe electric field is most favorable for electron transport, the 3dB bandwidth of the device is increased most obviously, so the optimal target peak concentration is 1 × 10 for the device structure18cm3The target characteristic length char is 4(μm).
The embodiment of the invention determines the target peak concentration based on the device size and simulates the non-uniform doping distribution to determine the target characteristic length. And generating a target electric field through the target peak concentration and the target characteristic length. Under different conditions, a proper target electric field can be determined so as to improve the efficiency of the carrier transportation of the whole absorption layer to the maximum extent.
On the basis of any of the above embodiments, the material of the absorption layer comprises one or more of GaAs, InGaAs and AlGaAs.
Specifically, one or more materials composed of rare metals are selected as the absorption layer in the single-row carrier photodetector.
The material synthesized by the rare metal is not particularly limited in the embodiment of the present invention.
Alternatively, gallium arsenide (GaAs) is a semiconductor consisting of gallium and arsenic. The resistivity is high, and the material can be made into a semi-insulating high-resistance material.
Alternatively, the InGaAs is a semiconductor composed of indium, gallium, and arsenic. Materials whose band gap depends on the In/Ga ratio have a high electron mobility and a narrow band gap.
Alternatively, aluminum gallium arsenide (AlGaAs) is a semiconductor composed of aluminum, gallium, and arsenic. And has high luminous efficiency.
The embodiment of the invention forms the absorption layer based on GaAs, InGaAs and AlGaAs, and can improve the mobility of carriers generated by absorbing light. And further, the efficiency of carrier transport of the absorption layer is improved, the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, and therefore the response capability of the device is improved.
On the basis of any of the above embodiments, the material of the N-type contact layer includes one or more of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb, and InGaAlN.
Specifically, one or more materials composed of rare metals are selected as the N-type contact layer in the single-row carrier photodetector.
The material synthesized by the rare metal is not particularly limited in the embodiment of the present invention.
Alternatively, gallium arsenide (GaAs) is a semiconductor consisting of gallium and arsenic. The resistivity is high, and the material can be made into a semi-insulating high-resistance material.
Alternatively, aluminum gallium arsenide (AlGaAs) is a semiconductor composed of aluminum, gallium, and arsenic. And has high luminous efficiency.
Alternatively, InP is a semiconductor composed of indium and phosphorus. Corrosion resistance, and high electron mobility and hole mobility.
Alternatively, the InGaAsP is a semiconductor composed of indium, gallium, phosphorus, and arsenic. Corrosion resistance, high melting point, high electron mobility and narrow energy band gap.
Alternatively, the InGaAs is a semiconductor composed of indium, gallium, and arsenic. Materials whose band gap depends on the In/Ga ratio have a high electron mobility and a narrow band gap.
Alternatively, aluminum gallium indium arsenide (InGaAlAs) is a semiconductor composed of arsenic, aluminum, gallium, and indium. The sub-band transition of the strain gauge device can be well realized.
Alternatively, indium gallium antimonide (InGaSb) is a semiconductor composed of antimony, indium, and gallium. It is possible to reduce loss in transmission in optical communication.
Alternatively, indium gallium nitride (InGaAlN) is a semiconductor composed of nitrogen, indium, and gallium. The band structure can be adjusted by changing the proportion of InGaAlN.
The embodiment of the invention forms the N-type contact layer based on GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb and InGaAlN, and can improve the mobility of carriers generated by absorbing light. And further, the efficiency of carrier transport of the absorption layer is improved, the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, and therefore the response capability of the device is improved.
On the basis of any of the above embodiments, the material of the P-type contact layer includes one or more of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb, and InGaAlN.
Specifically, one or more materials composed of rare metals are selected as the P-type contact layer in the single-row carrier photodetector.
The material synthesized by the rare metal is not particularly limited in the embodiment of the present invention.
Illustratively, the P-type contact layer and the N-type contact layer have similar functions, so the filling material can also be one or more of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb and InGaAlN.
According to the embodiment of the invention, the P-type contact layer is formed on the basis of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb and InGaAlN, so that the mobility of carriers generated by absorbing light can be improved. And further, the efficiency of carrier transport of the absorption layer is improved, the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, and therefore the response capability of the device is improved.
On the basis of any of the above embodiments, the material of the space layer includes one or more of InGaAs, InGaAsP and InP.
Specifically, one or more materials composed of rare metals are selected as the space layer in the single-row carrier photodetector.
The material synthesized by the rare metal is not particularly limited in the embodiment of the present invention.
Alternatively, the InGaAs is a semiconductor composed of indium, gallium, and arsenic. Materials whose band gap depends on the In/Ga ratio have a high electron mobility and a narrow band gap.
Alternatively, the InGaAsP is a semiconductor composed of indium, gallium, phosphorus, and arsenic. Corrosion resistance, high melting point, high electron mobility and narrow energy band gap.
Alternatively, InP is a semiconductor composed of indium and phosphorus. Corrosion resistance, and high electron mobility and hole mobility.
According to the embodiment of the invention, the space layer is formed based on InGaAs, InGaAsP and InP, so that the mobility of carriers can be improved by adjusting. And further, the efficiency of carrier transport of the absorption layer is improved, the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, and therefore the response capability of the device is improved.
On the basis of any of the above embodiments, an unintentional doping pattern is provided to the space layer.
Specifically, the single-row carrier photodetectors are arranged according to an unintentional doping pattern, and a corresponding doping profile is formed in the spatial layer.
According to the embodiment of the invention, the space layer is set based on the unintentional doping mode, so that the mobility of carriers can be improved by adjusting. And further, the efficiency of carrier transport of the absorption layer is improved, the 3dB bandwidth of the device can be effectively improved on the premise of not sacrificing the responsiveness of the device, and therefore the response capability of the device is improved.
The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware. With this understanding in mind, the above-described technical solutions may be embodied in the form of a software product, which can be stored in a computer-readable storage medium such as ROM/RAM, magnetic disk, optical disk, etc., and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the methods described in the embodiments or some parts of the embodiments.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A single-row carrier photodetector comprising a substrate and a plurality of epitaxial layers disposed centrally axially on a top surface of the substrate, wherein a plurality of the epitaxial layers comprise an absorber layer, and a target electric field is generated based on a target radial doping pattern provided for the absorber layer.
2. The single-row carrier photodetector of claim 1, wherein the plurality of epitaxial layers further comprises an N-electrode, an N-type contact layer, a collection layer, a spacer layer, a P-type contact layer, and a P-electrode in contact with the P-type contact layer;
the N-type contact layer, the collection layer, the space layer, the absorption layer, the P-type contact layer and the P electrode which are sequentially stacked form a columnar mesa structure;
the N electrode is axially sleeved on the columnar table-board structure along the center and is arranged on the upper surface of the substrate.
3. The single-row carrier photodetector of any one of claims 1 and 2, wherein the target doping pattern comprises one of a gaussian doping pattern and a radial step doping pattern.
4. A single-row carrier photodetector as claimed in claim 3, wherein the target doping pattern corresponds to a non-uniform doping profile of:
Figure FDA0003413623900000011
wherein N (x) is the doping concentration of the absorption layer, N is the peak concentration, d is the position of the peak concentration, x is the length from the position of the peak concentration, and char is the characteristic length.
5. The single-row carrier photodetector of claim 4, wherein said generating a target electric field based on setting a radial doping pattern to said absorption layer comprises:
determining a target peak concentration based on the size information of the columnar mesa structure;
simulating the non-uniform doping distribution based on the target peak concentration to obtain a target characteristic length;
and setting a target doping distribution based on the target peak concentration and the target characteristic length, and generating the target electric field in the absorption layer.
6. The single-row carrier photodetector of claim 1, wherein the material of the absorption layer comprises one or more of GaAs, InGaAs, and AlGaAs.
7. The single file carrier photodetector of claim 2, wherein the material of the N-type contact layer comprises one or more of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb, and InGaAlN.
8. The single-file carrier photodetector of claim 2, wherein the material of the P-type contact layer comprises one or more of GaAs, AlGaAs, InP, InGaAsP, InGaAlAs, InGaSb, and InGaAlN.
9. The single-row carrier photodetector of claim 2, wherein the material of the spatial layer comprises one or more of InGaAs, InGaAsP, and InP.
10. The single-row carrier photodetector of claim 9, wherein the spatial layer is provided with an unintentional doping pattern.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097964A (en) * 2015-07-21 2015-11-25 中国电子科技集团公司第三十八研究所 Active-region Gaussian doped p-pi-n ultraviolet detector
CN105140330A (en) * 2015-09-23 2015-12-09 北京邮电大学 Low-power consumption zero-bias uni-travelling carrier photodetector
CN106784123A (en) * 2016-11-23 2017-05-31 苏州苏纳光电有限公司 Single file carrier photodetector and preparation method thereof
CN110544732A (en) * 2019-08-29 2019-12-06 北京邮电大学 Single-row carrier photodiode
WO2020107784A1 (en) * 2018-11-27 2020-06-04 上海新微技术研发中心有限公司 Unidirectional carrier transport photodetector and manufacturing method therefor
US20210066529A1 (en) * 2019-08-28 2021-03-04 Artilux, Inc. Photo-detecting apparatus with low dark current

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097964A (en) * 2015-07-21 2015-11-25 中国电子科技集团公司第三十八研究所 Active-region Gaussian doped p-pi-n ultraviolet detector
CN105140330A (en) * 2015-09-23 2015-12-09 北京邮电大学 Low-power consumption zero-bias uni-travelling carrier photodetector
CN106784123A (en) * 2016-11-23 2017-05-31 苏州苏纳光电有限公司 Single file carrier photodetector and preparation method thereof
WO2020107784A1 (en) * 2018-11-27 2020-06-04 上海新微技术研发中心有限公司 Unidirectional carrier transport photodetector and manufacturing method therefor
US20210066529A1 (en) * 2019-08-28 2021-03-04 Artilux, Inc. Photo-detecting apparatus with low dark current
CN110544732A (en) * 2019-08-29 2019-12-06 北京邮电大学 Single-row carrier photodiode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘力榕: ""光通信中低噪声高速高饱和单行载流子光探测器的研究"", 《中国优秀硕士学位论文全文数据库》, 31 March 2018 (2018-03-31), pages 136 - 889 *

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