CN114447081A - Display panel - Google Patents

Abstract

The invention provides a display panel, which comprises a flexible substrate, a first inorganic layer arranged on the flexible substrate, a thin film transistor layer arranged on the first inorganic layer, and a light-emitting device arranged on the thin film transistor layer, wherein the first inorganic layer comprises a plurality of inorganic blocks distributed at intervals, and the edges of the inorganic blocks comprise a stepped structure. Patterning is carried out on the first inorganic layer on the thin film transistor layer and the flexible substrate to form a plurality of inorganic blocks, a step structure is formed at the edge of each inorganic block, and the stress of the thin film transistor on the thin film transistor layer and the metal wiring in the bending process of the flexible substrate can be dispersed, so that the risk of film layer breakage is reduced.

Description

Display panel

Technical Field

The invention relates to the technical field of display, in particular to a display panel.

Background

As display technologies have been developed, display panels have been developed to be foldable, stretchable, and rollable, and flexible display panels may be subjected to stresses such as rolling, bending, stretching, and the like during use. In flexible display applications, thin film transistor devices need to be formed on a flexible substrate, wherein the flexible substrate is generally composed of an organic material with good deformation resistance. An inorganic layer is generally arranged between the thin film transistor device and the flexible substrate to block the invasion of water and oxygen, but the inorganic material has poor deformation tolerance and is easy to generate brittle fracture under the action of stress and strain.

Therefore, the structure of the existing display panel is to be improved.

Disclosure of Invention

The embodiment of the invention provides a display panel, which aims to solve the technical problems that an inorganic layer between a flexible substrate and a thin film transistor device is poor in deformation tolerance and easy to break in a flexible bending process.

In order to solve the above problems, the technical scheme provided by the invention is as follows:

an embodiment of the present invention provides a display panel, including:

a flexible substrate;

the first inorganic layer is arranged on the flexible substrate and comprises a plurality of inorganic blocks which are distributed at intervals, and the edges of the inorganic blocks comprise a stepped structure;

a thin-film transistor layer disposed on the first inorganic layer; and

and the light-emitting device is arranged on the thin film transistor layer.

In some embodiments of the invention, the stepped structure comprises a plurality of ramp surfaces that ascend in sequence and at least one step surface between the ramp surfaces.

In some embodiments of the present invention, an included angle between the plurality of slopes and the flexible substrate gradually increases along a direction of the flexible substrate toward the first inorganic layer.

In some embodiments of the present invention, the plurality of slope surfaces includes a first slope surface close to the flexible substrate and a second slope surface far from the flexible substrate, an included angle between the first slope surface and the flexible substrate is greater than or equal to 30 ° and less than 45 °, and an included angle between the second slope surface and the flexible substrate is greater than or equal to 45 ° and less than or equal to 75 °.

In some embodiments of the present invention, the plurality of slope surfaces further includes a third slope surface located between the first slope surface and the second slope surface, an included angle between the third slope surface and the flexible substrate is greater than or equal to 45 ° and less than 60 °, and an included angle between the second slope surface and the flexible substrate is greater than or equal to 60 ° and less than or equal to 75 °.

In some embodiments of the present invention, the thin-film transistor layer includes a semiconductor layer disposed corresponding to the inorganic block.

In some embodiments of the present invention, the display panel further includes a light shielding layer disposed between the inorganic blocks and the semiconductor layer, an orthographic projection of the semiconductor layer on the flexible substrate is within an orthographic projection of the light shielding layer on the flexible substrate, and an orthographic projection of the light shielding layer on the flexible substrate is within an orthographic projection of the inorganic blocks on the flexible substrate.

In some embodiments of the present invention, an orthographic projection of the light shielding layer on the flexible substrate does not overlap with an orthographic projection of the plurality of slope surfaces of the stair structure on the flexible substrate.

In some embodiments of the invention, the ramp surface comprises at least one of a straight ramp surface, an arcuate surface.

In some embodiments of the present invention, the step surface is parallel to the flexible substrate, and a width of the step surface is less than or equal to 10 micrometers.

The invention has the beneficial effects that: the display panel provided by the embodiment of the invention comprises a flexible substrate, a first inorganic layer arranged on the flexible substrate, a thin film transistor layer arranged on the first inorganic layer and a light-emitting device arranged on the thin film transistor layer, wherein the first inorganic layer comprises a plurality of inorganic blocks which are distributed at intervals, and the edges of the inorganic blocks comprise a stepped structure. Patterning is carried out on the first inorganic layer on the thin film transistor layer and the flexible substrate to form a plurality of inorganic blocks, a step structure is formed at the edge of each inorganic block, and the stress of the thin film transistor on the thin film transistor layer and the metal wiring in the bending process of the flexible substrate can be dispersed, so that the risk of film layer breakage is reduced.

Drawings

Fig. 1 is a schematic view of a first film stack structure of a display panel according to an embodiment of the invention;

fig. 2 is a schematic view of a first structure of a first inorganic layer according to an embodiment of the present invention;

fig. 3 is a schematic diagram of a second structure of a first inorganic layer according to an embodiment of the present invention;

fig. 4 is a schematic diagram illustrating a third structure of a first inorganic layer according to an embodiment of the present invention;

fig. 5 is a schematic diagram illustrating a fourth structure of a first inorganic layer according to an embodiment of the present invention;

fig. 6 is a schematic view of a second film stack structure of a display panel according to an embodiment of the invention.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. In the description of the present application, it is to be understood that the terms "length," "width," "thickness," "upper," "lower," and the like, as used herein, refer to an orientation or positional relationship as shown in the drawings, which is used for convenience in describing the present application and to simplify the description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be taken as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.

In this application, unless expressly stated or limited otherwise, the first feature "on" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but via another feature in between. Also, the first feature "on" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature.

Referring to fig. 1, fig. 1 is a schematic view of a first film layer structure of a display panel according to an embodiment of the present invention, where the display panel 100 includes a flexible substrate 10, a first inorganic layer 20 disposed on the flexible substrate 10, a thin-film transistor layer 50 disposed on the first inorganic layer 20, and a light emitting device 60 disposed on the thin-film transistor layer 50.

The display panel 100 of the embodiment of the invention includes, but is not limited to, a liquid crystal display panel, a Micro/Mini-LED display panel, a quantum dot display panel, or an OLED display panel. In the embodiment of the present invention, the OLED display panel is taken as an example, and the light emitting device 60 is an organic light emitting diode. The light emitting device 60 includes a first electrode layer 61, a light emitting layer 62, and a second electrode layer 63 sequentially stacked on the thin film transistor layer 50. The light emitting device 60 according to an embodiment of the present invention may be a top emission device, the first electrode layer 61 is an anode layer, and the second electrode layer 63 is a cathode. The light emitting layer 62 includes a hole injection layer, a hole transport layer, a light emitting material layer, an electron transport layer, and an electron injection layer, which are sequentially stacked on the first electrode layer 61.

The material of the flexible substrate 10 includes, but is not limited to, a polyimide material, and the display panel may be a flexible display panel such as a foldable display panel, a stretchable display panel, or a rollable display panel, and whatever type of flexible display panel, the display panel is involved in bending and may be subjected to a stress strain. The first inorganic layer 20 between the flexible substrate 10 and the thin-film transistor layer 50 of the typical flexible display panel is disposed over the entire surface, and is prone to brittle fracture during bending. In view of the above defects, the embodiment of the invention performs the patterning design on the structure of the first inorganic layer 20 to release the stress on the thin film transistor layer 50 and the metal traces during the bending process of the display panel 100.

Specifically, the first inorganic layer 20 includes a plurality of spaced inorganic blocks 21, and an edge of the inorganic blocks 21 includes a step structure 211. On the one hand, the stress of the display panel 100 when being bent can be reduced by designing the first inorganic layer 20 into the inorganic blocks 21 distributed at intervals, on the other hand, the edges of the inorganic blocks 21 are designed into the stepped structure 211, so that the concentration of bending stress can be avoided, stress points are increased in the bending process, the effect of dispersing stress is achieved, the risk of film breakage is reduced, and the reliability of the display panel 100 in the application of flexible display products is improved.

The maximum thickness of the first inorganic layer 20 is 2000-20000 angstroms, and the maximum thickness refers to the thickness of the main body of the first inorganic layer 20 except the step structure 211. The material of the first inorganic layer 20 includes at least one of SiOx and SiNx. The first inorganic layer 20 may be a single-layer film or a double-layer composite film. In the embodiment of the invention, the first inorganic layer 20 is a single-layer film layer, and the material of the first inorganic layer 20 may be SiOx material.

Since the water and oxygen barrier ability of the first inorganic layer 20 is reduced after the patterning design, in the embodiment of the invention, the second inorganic layer 40 is disposed on the first inorganic layer 20, and the second inorganic layer 40 covers the first inorganic layer 20, so as to enhance the effect of blocking water and oxygen from entering the upper thin film transistor layer 50.

The thickness of the second inorganic layer 40 is 1000-5000 angstroms, the material of the second inorganic layer 40 includes but is not limited to at least one of SiOx and SiNx, and the second inorganic layer 40 may be a single-layer film or a double-layer composite film structure.

In an embodiment of the present invention, the second inorganic layer 40 is preferably a double-layer composite film structure, the second inorganic layer 40 includes a first sub-layer and a second sub-layer sequentially stacked on the first inorganic layer 20, the first sub-layer is preferably made of SiOx, the second sub-layer is preferably made of SiNx, and the capability of the display panel 100 of blocking water and oxygen intrusion is enhanced by providing a stacked material of SiOx + SiNx.

Referring to fig. 2 and fig. 3, fig. 2 is a schematic view of a first structure of a first inorganic layer according to an embodiment of the present disclosure, and fig. 3 is a schematic view of a second structure of the first inorganic layer according to the embodiment of the present disclosure. The stair structure 211 comprises a plurality of ramp surfaces (e.g., 201, 202, 204) that ascend in sequence and at least one step surface 203 located between the ramp surfaces.

In some embodiments of the present invention, along a direction of the flexible substrate 10 toward the first inorganic layer 20, an included angle between a plurality of slopes and the flexible substrate 10 is gradually increased, that is, the farther away from the slope of the flexible substrate 10, the greater the included angle between the slope and the flexible substrate 10, the steeper the slope; the slope surface closer to the flexible substrate 10 has a smaller included angle with the flexible substrate 10, and the slope surface is gentler. By such a design, the film coverage of the subsequent film layer at the step structure 211 can be ensured to be good.

Further, the plurality of slope surfaces include a first slope surface 201 close to the flexible substrate 10 and a second slope surface 202 far from the flexible substrate 10, an included angle between the first slope surface 201 and the flexible substrate 10 is α, 30 ° or more and less than 45 °, specifically a value of 30 °, 35 ° or 40 °, an included angle between the second slope surface 202 and the flexible substrate 10 is β, 45 ° or more and less than 75 °, specifically a value of 45 °, 50 °, 55 °, 60 °, 65 °, 70 ° or 75 °. The inclination angles of the first slope 201 and the second slope 202 are within the angle range, so that on one hand, stress can be effectively relieved, the stress of the inorganic layer is prevented from being directly applied to the thin film transistor layer 50, and on the other hand, better thin film coverage of a subsequent film layer during deposition can be ensured.

In some embodiments, as shown in fig. 3, the step structure 211 includes three slope surfaces ascending in sequence, that is, a first slope surface 201 close to the flexible substrate 10, a second slope surface 202 far away from the flexible substrate 10, and a third slope surface 204 between the first slope surface 201 and the second slope surface 202, an included angle between the first slope surface 201 and the flexible substrate 10 is α, 30 ° or more and less than 45 °, specifically 30 °, 35 ° or 40 ° or the like, an included angle between the third slope surface 204 and the flexible substrate 10 is γ, 45 ° or more and less than 60 °, specifically 45 °, 50 ° or 55 ° or the like, and an included angle between the second slope surface 202 and the flexible substrate 10 is β, 60 ° or more and less than 75 °, specifically 60 °, 65 °, 70 ° or 75 ° or the like.

In the embodiment of the present invention, one step surface 203 may be disposed between any adjacent slope surfaces, as shown in fig. 3. In another embodiment, as shown in fig. 4, fig. 4 is a third schematic structural diagram of the first inorganic layer according to the embodiment of the present invention, it is not necessary to provide one step surface 203 between every two adjacent slope surfaces, that is, one step surface 203 may be provided between some adjacent slope surfaces, and no step surface 203 is provided between some adjacent slope surfaces. For example, a step surface 203 is arranged between the first slope surface 201 and the third slope surface 204, no step surface 203 is arranged between the third slope surface 204 and the second slope surface 202, and the third slope surface 204 and the second slope surface 202 are in a continuous ascending trend.

As shown in fig. 2, in the embodiment of the present invention, the step surface 203 is parallel to the flexible substrate 10, and the width of the step surface 203 is less than or equal to 10 μm. Preferably, the width of the step surface 203 is 3-10 micrometers.

The slope surface comprises at least one of a straight slope surface and an arc surface. As shown in fig. 2, when the slope surface is a straight slope surface, an included angle between the slope surface and the flexible substrate 10 is an included angle between the straight slope surface and a plane where the flexible substrate 10 is located. As shown in fig. 5, fig. 5 is a schematic view of a fourth structure of the first inorganic layer according to the embodiment of the present invention, when the slope is an arc surface, an included angle between the slope and the flexible substrate 10 is an included angle between a tangent line of any point on the arc surface and a plane where the flexible substrate 10 is located. Specifically, the cambered surface comprises at least one of an inner concave cambered surface and an outer convex cambered surface.

In some embodiments, as shown in fig. 5, the step structure 211 includes two slope surfaces, namely a first slope surface 201 close to the flexible substrate 10 and a second slope surface 202 far from the flexible substrate 10, where the first slope surface 201 is an inner concave arc surface and the second slope surface 202 is an outer convex arc surface, so as to better achieve step coverage of a subsequent film layer.

As shown in fig. 1, the thin film transistor layer 50 of the embodiment of the invention includes a plurality of thin film transistors and signal traces, where the thin film transistors include a semiconductor layer 51, a gate layer 52, and a source/drain layer 53. The thin film transistor includes, but is not limited to, at least one of the oxide thin film transistor, the low temperature polysilicon thin film transistor, and the amorphous silicon thin film transistor. The thin film transistor may be a top gate type or a bottom gate type structure.

Taking an oxide thin film transistor as an example, the material of the semiconductor layer 51 may be a metal oxide material. The thin film transistor is of a top gate type, the gate layer 52 is arranged on the semiconductor layer 51, the source drain layer 53 is arranged on the gate layer 52, and a source and a drain of the source drain layer 53 are electrically connected with the semiconductor layer 51 on the lower layer through corresponding via holes.

The material of the semiconductor layer 51 includes, but is not limited to, at least one of IGTO (indium gallium tin oxide), IGZO (indium gallium zinc oxide), ITZO (indium tin zinc oxide), and IGZTO (indium gallium zinc tin oxide).

In some embodiments of the present invention, the semiconductor layer 51 is disposed corresponding to the inorganic block 21, that is, the inorganic block 21 is disposed right below the semiconductor layer 51, so that the bending stress can be effectively relieved.

Since the semiconductor layer 51 is made of metal oxide, the electrical property of the metal oxide is easily affected by the external ambient light. Therefore, in the embodiment of the present invention, the display panel 100 further includes a light shielding layer 30 disposed between the inorganic block 21 and the semiconductor layer 51, and the light shielding layer 30 is used for shielding ambient light to prevent the ambient light from irradiating the semiconductor layer 51 and causing an influence on the electrical property of the semiconductor layer 51. The source drain layer 53 may be electrically connected to the light shielding layer 30 through a corresponding via hole, so as to prevent the free charges from affecting the electrical performance of the thin film transistor.

Specifically, as shown in fig. 1, an orthogonal projection of the semiconductor layer 51 on the flexible substrate 10 is located in an orthogonal projection of the light shielding layer 30 on the flexible substrate 10, so as to achieve a better light shielding effect. The material of the light shielding layer 30 may be a metal material, and the material of the light shielding layer 30 includes, but is not limited to, Mo, Cr, Al, Cu, Ti, and one of alloy materials of at least two of the foregoing.

Further, an orthogonal projection of the light shielding layer 30 on the flexible substrate 10 is located within an orthogonal projection of the inorganic block 21 on the flexible substrate 10. Thus, the light-shielding layer 30 and the inorganic block 21 can be prepared by the same photo-masking process without adding a new photo-masking process.

Specifically, the material of the first inorganic layer 20 and the material of the light shielding layer 30 are sequentially deposited on the flexible substrate 10, and then the patterns of the inorganic block 21 and the light shielding layer 30 are etched through a half-tone mask (halftonemask) process.

The transmittance of the halftone mask corresponding to different areas of the first inorganic layer 20 is different, so that all the layers of the first inorganic layer 20 are removed, a part of the layers of the first inorganic layer 20 are retained, or all the layers of the first inorganic layer 20 are retained at corresponding positions.

In the embodiment of the present invention, the portion of the inorganic block 21 shielded by the light shielding layer 30 is not etched, a portion of the film layer is etched away from the edge of the inorganic block 21 to form the step structure 211, and the portion between the adjacent inorganic blocks 21 is completely etched away. In other words, an orthographic projection of the light shielding layer 30 on the flexible substrate 10 does not overlap with an orthographic projection of the plurality of slope surfaces of the stair structure 211 on the flexible substrate 10.

In some embodiments of the present invention, the step structure 211 of the edge of the inorganic block 21 may be a closed structure, that is, the step structure 211 surrounds the corresponding light shielding layer 30. The step structure 211 is a closed structure and is disposed on the periphery of the thin film transistor layer 50, so that a better stress releasing effect can be achieved.

In another embodiment, as shown in fig. 6, fig. 6 is a schematic view of a second film layer structure of the display panel according to the embodiment of the present invention, the thin film transistor of the thin film transistor layer 50 may be a low temperature polysilicon thin film transistor, and the material of the semiconductor layer 51 is low temperature polysilicon. The thin film transistor type is a top gate type thin film transistor. The description of the structure of the inorganic block 21 can refer to the description of the above embodiments, and is not repeated here.

Taking the structure of the display panel shown in fig. 1 as an example, the preparation process of the display panel 100 includes: sequentially depositing a first inorganic film layer and a first metal film layer on a flexible substrate 10; etching the inorganic film layer and the first metal film layer by the same photomask process to form a patterned inorganic block 21 and a light shielding layer 30; forming a second inorganic layer 40 on the light-shielding layer 30; forming a thin-film transistor layer 50 on the second inorganic layer 40; light emitting device 60 is formed on thin-film-transistor layer 50.

Specifically, the flexible substrate 10 is cleaned, and a first inorganic film layer is deposited on the flexible substrate, wherein the thickness of the first inorganic film layer is 2000-20000 angstroms, and the first inorganic film layer can be a SiOx film, a SiNx film or a laminated film thereof; depositing a first metal film layer on the inorganic film layer, wherein the thickness of the first metal film layer is 500-2000 angstroms, and the first metal film layer can be made of Mo, Cr, Al, Cu, Ti or the like, or made of an alloy of the materials; the inorganic film layer and the first metal film layer are exposed and etched through a half mask process to form patterns of the inorganic block 21 and the light shielding layer 30, and a step structure 211 is formed at the edge of the inorganic block 21.

And depositing a second inorganic film layer on the shading layer 30 to serve as a second inorganic layer 40, covering the shading layer 30 and the inorganic block 21 and playing a role in further isolating water and oxygen. The thickness is 1000-5000 angstroms, and the second inorganic film layer can be SiOx film, SiNx film or multilayer structure film of the above films.

And depositing a metal oxide material with the film thickness of 100-1000 angstroms, and etching the metal oxide material to form the patterned semiconductor layer 51, wherein the metal oxide material can be IGZO, IGTO, ITZO or IGZTO.

Depositing a SiOx, SiNx or multi-layer SiOx, SiNx film on the semiconductor layer 51 as a gate insulating layer with a thickness of 1000-3000A; depositing a second metal film layer on the gate insulating layer, wherein the thickness of the second metal film layer is 2000-8000 angstrom, and the material of the second metal film layer can be Mo, Al, Cu, Ti and the like or the alloy thereof; and then, a yellow light process is utilized, the second metal film layer is etched to form a pattern of the grid electrode layer 52, and then the pattern of the grid electrode insulating layer is etched by taking the pattern of the grid electrode layer 52 as self-alignment. Where the gate layer 52 is present, the material of the gate insulating layer is retained, and where the gate layer 52 is not present, the material of the gate insulating layer is removed.

The entire surface of the semiconductor layer 51 can be plasma-treated, and a region of the semiconductor layer 51 shielded by the gate layer 52 is a semiconductor region, and a region not shielded by the gate layer 52 is a semiconductor region.

And depositing an interlayer insulating layer on the gate layer 52, wherein the interlayer insulating layer can be a single-layer or multi-layer film structure and can be made of SiOx or SiNx. Then, a source/drain layer 53 is patterned on the gate layer 52, and holes are formed at the corresponding positions, so that the source and the drain of the source/drain layer 53 are electrically connected to the underlying semiconductor layer 51 and the light-shielding layer 30. The thickness of the source/drain layer 53 may be 2000-8000A, and the material may be one of Mo, Al, Cu, Ti and their alloys.

And then, forming a passivation layer on the source/drain layer 53, wherein the passivation layer may be a single-layer or multi-layer composite structure, and the material may be SiOx or SiNx. And forming a flat layer on the passivation layer, wherein the flat layer can be made of organic materials and provides a flat surface for the deposition of a subsequent electrode layer.

Then, forming a pattern of a first electrode layer 61 on the flat layer, forming a pixel definition layer on the flat layer, digging a hole on the pixel definition layer to form an opening region, depositing each functional layer of the luminescent layer 62, such as a hole injection layer, a hole transport layer, a luminescent material layer, an electron transport layer and an electron injection layer, on the opening region and the pixel definition layer, and finally forming a pattern of a second electrode layer 63 on the electron injection layer; and finally, the light emitting device 60 is packaged.

To sum up, the display panel provided by the embodiment of the invention includes a flexible substrate 10, a first inorganic layer 20 disposed on the flexible substrate 10, a thin-film transistor layer 50 disposed on the first inorganic layer 20, and a light emitting device 60 disposed on the thin-film transistor layer 50, wherein the first inorganic layer 20 includes a plurality of inorganic blocks 21 distributed at intervals, and edges of the inorganic blocks include a step structure 211. On one hand, the thin film transistor layer 50 and the first inorganic layer 20 on the flexible substrate 10 are subjected to patterning processing to form a plurality of inorganic blocks 21, and the step structures 211 are formed at the edges of the inorganic blocks 21, so that the stress of the thin film transistors and metal wires of the thin film transistor layer 50 during the bending process of the flexible substrate 10 can be dispersed, and the risk of film layer fracture is reduced. On the other hand, the first inorganic layer 20 and the light-shielding layer 30 under the thin-film transistor layer 50 can be processed through the same mask, and the number of new masks is not increased.

In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.

The display panel provided by the embodiment of the present invention is described in detail above, and the principle and the implementation of the present invention are explained in this document by applying specific examples, and the description of the above embodiment is only used to help understanding the technical scheme and the core idea of the present invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A display panel, comprising:

a flexible substrate;

the first inorganic layer is arranged on the flexible substrate and comprises a plurality of inorganic blocks which are distributed at intervals, and the edges of the inorganic blocks comprise a stepped structure;

a thin-film transistor layer disposed on the first inorganic layer; and

and the light-emitting device is arranged on the thin film transistor layer.

2. The display panel of claim 1, wherein the stair step structure comprises a plurality of ramp surfaces that sequentially ascend upwardly and at least one step surface between the ramp surfaces.

3. The display panel according to claim 2, wherein an included angle between the plurality of slopes and the flexible substrate is gradually increased along a direction of the flexible substrate toward the first inorganic layer.

4. The display panel of claim 3, wherein the plurality of slope surfaces comprises a first slope surface close to the flexible substrate and a second slope surface far away from the flexible substrate, an included angle between the first slope surface and the flexible substrate is greater than or equal to 30 ° and less than 45 °, and an included angle between the second slope surface and the flexible substrate is greater than or equal to 45 ° and less than or equal to 75 °.

5. The display panel of claim 4, wherein the plurality of slope surfaces further comprises a third slope surface between the first slope surface and the second slope surface, an included angle between the third slope surface and the flexible substrate is greater than or equal to 45 ° and less than 60 °, and an included angle between the second slope surface and the flexible substrate is greater than or equal to 60 ° and less than or equal to 75 °.

6. The display panel of claim 3, wherein the thin-film transistor layer comprises a semiconductor layer disposed corresponding to the inorganic block.

7. The display panel of claim 6, further comprising a light shielding layer disposed between the inorganic blocks and the semiconductor layer, wherein an orthographic projection of the semiconductor layer on the flexible substrate is within an orthographic projection of the light shielding layer on the flexible substrate, and wherein an orthographic projection of the light shielding layer on the flexible substrate is within an orthographic projection of the inorganic blocks on the flexible substrate.

8. The display panel according to claim 7, wherein an orthographic projection of the light shielding layer on the flexible substrate does not overlap with an orthographic projection of the plurality of slopes of the stair step structure on the flexible substrate.

9. The display panel of claim 2, wherein the slope comprises at least one of a straight slope and an arc.

10. The display panel according to claim 2, wherein the step surface is parallel to the flexible substrate, and a width of the step surface is less than or equal to 10 μm.

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