CN114441872B - ZnO varistor aging state evaluation method based on temperature influence - Google Patents

ZnO varistor aging state evaluation method based on temperature influence Download PDF

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CN114441872B
CN114441872B CN202210043180.6A CN202210043180A CN114441872B CN 114441872 B CN114441872 B CN 114441872B CN 202210043180 A CN202210043180 A CN 202210043180A CN 114441872 B CN114441872 B CN 114441872B
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piezoresistor
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CN114441872A (en
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王东阳
杨佳伟
林智聪
俞剑飞
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Southwest Jiaotong University
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Abstract

An evaluation method based on the aging state of a ZnO varistor under the influence of temperature is shown in a flow chart of figure 2. The evaluation steps are as follows: the ZnO piezoresistor is impacted by the impact generator, working current factors of the ZnO piezoresistor at different impact times and temperatures are obtained by recording the impact times and the measured temperature value after impact, an aging state evaluation factor of the ZnO piezoresistor is finally obtained by combining the working current factors and the working voltage factors, and the aging state of the ZnO piezoresistor is judged according to the calculated aging state evaluation factor of the ZnO piezoresistor. The method has the advantages that the ZnO varistor aging state evaluation method based on the temperature influence is provided, the test platform is set up, the aging state evaluation factor of the ZnO varistor is considered in the main realization method, and the method has important significance for the stable operation of the power communication system.

Description

ZnO varistor aging state evaluation method based on temperature influence
Technical Field
The invention belongs to the field of aging protection of piezoresistors, and particularly relates to an evaluation method of an aging state of a ZnO piezoresistor based on temperature influence.
Background
The ZnO varistor has excellent nonlinear characteristics, so that the ZnO varistor is widely applied to power communication systems, is a core device in surge protectors and lightning arresters, and has the main function of preventing equipment damage caused by impact of lightning current and overvoltage. In practical application, the ZnO varistor can be aged or even completely disabled due to factors such as lightning current and overvoltage, so that the service life is greatly shortened, once the ZnO varistor is damaged, the lightning current and overvoltage can cause unpredictable damage to electric equipment, and the damage can even affect the whole electric power communication system. Therefore, the understanding of the aging state of the ZnO piezoresistor has great significance for the stable operation of the power communication system.
Few studies are currently considered on the aging state of ZnO varistors based on the influence of temperature. According to the invention, the impact frequency and temperature factors of the ZnO varistor are combined and analyzed, the aging state evaluation factor of the ZnO varistor is obtained by comprehensively considering the working current and the working voltage of the ZnO varistor, and the aging evaluation of the ZnO varistor is carried out by the aging state evaluation factor.
Disclosure of Invention
The invention aims to provide an evaluation method of the aging state of a ZnO voltage dependent resistor under the influence of temperature. The method is characterized in that a test evaluation platform is firstly built, and the platform comprises: the device comprises an upper computer, an impact control device, an impact generating device, a high-voltage coaxial cable, a switch, a constant-temperature test box, a ZnO piezoresistor test article, an infrared temperature shooting instrument, a temperature monitor, a voltage detection device, a data acquisition unit, a data processor and a grounding network;
the upper computer is connected with the input end of the impact control device, the output end of the impact control device is connected with the input end of the impact generating device, and the base of the impact generating device is connected with the grounding grid;
the output end of the impact generating device is connected with the upper end of a high-voltage coaxial cable, the lower end of the high-voltage coaxial cable is connected with the left end of a switch, the right end of the switch is connected with the upper end of a ZnO piezoresistor test sample, the lower end of the ZnO piezoresistor test sample is connected with the input end of a voltage detecting device, and the output end of the voltage detecting device is connected with a base of the impact generating device to form a loop;
the ZnO piezoresistor test sample is placed in a constant-temperature test box, and the infrared temperature shooting instrument is placed in the constant-temperature test box;
the upper computer is connected with the input end of the infrared temperature shooting instrument, the output end of the infrared temperature shooting instrument is connected with the input end of the temperature monitor, the output end of the temperature monitor is connected with the input end of the data acquisition unit, and the voltage detection device is connected with the input end of the data acquisition unit;
the output end of the data acquisition unit is connected with the input end of the data processor, and the output end of the data processor is connected with the upper computer;
a ZnO varistor aging state assessment method based on temperature influence includes the following steps:
s1: closing the switch, sending a control signal to the impact control device through the upper computer, enabling the impact generation device to send impact to the ZnO piezoresistor test sample, measuring the working voltage of the ZnO piezoresistor test sample through the voltage detection device, opening the switch, recording the impact times in the upper computer, and repeating the steps for n times;
s2: adjusting the temperature of the constant temperature test box to 20 ℃, controlling an infrared temperature shooting instrument (8) in the constant temperature test box to shoot the ZnO piezoresistor test sample after each impact through an upper computer, and obtaining temperature data after the impact in a temperature monitor;
s3: transmitting the measured working voltage and temperature signals to a data acquisition unit, and transmitting the collected signals to an upper computer by the data acquisition unit through a data processor;
s4: calculating to obtain the working current factor I of the ZnO varistor s
Figure GDA0003901217080000021
In the formula (1), n is the impact frequency, T is the temperature of a ZnO piezoresistor test sample, delta is an error coefficient, and x is an integral variable;
s5: the formula (1) is optimized and modeled by adopting a genetic algorithm to obtain the delta which minimizes the error a The method comprises the following specific steps:
1) Randomly generating an initial solution delta, and calculating an objective function f (delta):
Figure GDA0003901217080000022
in the formula (2), f (delta) represents an objective function, I m Is a reference value of the m-th operating current, I sm The calculated value of the m-th working current is N, the total impact times are N =50;
2) Generating a perturbation new solution δ ', calculating an objective function Δ f = f (δ) -f (δ'); if delta f is more than or equal to 0, accepting the new solution, otherwise, obtaining the new solution according to a probability acceptance criterion;
3) Judging whether the iteration times are reached, if so, turning to the step 4), and if not, turning to the step 2);
4) Judging whether a termination condition is met, if so, finishing the operation, and outputting an optimal solution, otherwise, resetting the iteration times and turning to the step 2);
s6: d, converting delta obtained in S5 a Substituting the formula (1) to obtain the optimized working current factor I of the ZnO piezoresistor a Calculating the formula:
Figure GDA0003901217080000031
in the formula (3), n is the number of impact times, T is the temperature of the ZnO varistor sample, delta a For the optimized error coefficient, x is an integral variable;
s7: calculating an aging state evaluation factor alpha of the ZnO piezoresistor:
Figure GDA0003901217080000032
in the formula (4), U is a working voltage factor at two ends of the ZnO varistor, I a The optimized working current factor is obtained;
when alpha belongs to [50, + ∞), the ZnO piezoresistor is characterized to be normal; when alpha belongs to [10,50 ], the ZnO piezoresistor is characterized to be slightly aged; when alpha epsilon (10,0), the ZnO varistor is characterized to be seriously aged.
The invention has the beneficial effects that:
1) The remote operation is mainly carried out through an upper computer, and the operation is simple, convenient and safe;
2) The constant temperature type test box can keep the environmental temperature of the ZnO piezoresistor unchanged, and the accuracy of the test can be improved by setting the environmental temperature to be 20 ℃;
3) The aging state of the ZnO piezoresistor can be accurately judged through the aging state evaluation factor of the ZnO piezoresistor, and if the aging condition exists, the test article is timely processed;
drawings
FIG. 1 is a block diagram of the present invention;
Detailed Description
The embodiments of the present invention will be further described with reference to the accompanying drawings, wherein the invention comprises the following steps:
a ZnO voltage dependent resistor aging state assessment method based on temperature influence is characterized in that a test assessment platform is firstly established, and the platform comprises: the device comprises an upper computer (1), an impact control device (2), an impact generating device (3), a high-voltage coaxial cable (4), a switch (5), a constant-temperature test box (6), a ZnO piezoresistor test article (7), an infrared temperature shooting instrument (8), a temperature monitor (9), a voltage detection device (10), a data acquisition unit (11), a data processor (12) and a grounding grid (13);
the upper computer (1) is connected with the input end of the impact control device (2), the output end of the impact control device (2) is connected with the input end of the impact generating device (3), and the base of the impact generating device (3) is connected with the grounding grid (13);
the output end of the impact generating device (3) is connected with the upper end of a high-voltage coaxial cable (4), the lower end of the high-voltage coaxial cable (4) is connected with the left end of a switch (5), the right end of the switch (5) is connected with the upper end of a ZnO piezoresistor test article (7), the lower end of the ZnO piezoresistor test article (7) is connected with the input end of a voltage detecting device (10), and the output end of the voltage detecting device (10) is connected with the base of the impact generating device (3) to form a loop;
the ZnO piezoresistor test sample (7) is arranged in a constant-temperature test box (6), and the infrared temperature shooting instrument (8) is arranged in the constant-temperature test box (6);
the upper computer (1) is connected with the input end of the infrared temperature shooting instrument (8), the output end of the infrared temperature shooting instrument (8) is connected with the input end of the temperature monitoring instrument (9), the output end of the temperature monitoring instrument (9) is connected with the input end of the data acquisition unit (11), and the voltage detection device (10) is connected with the input end of the data acquisition unit (11);
the output end of the data acquisition unit (11) is connected with the input end of the data processor (12), and the output end of the data processor (12) is connected with the upper computer (1);
a ZnO varistor aging state assessment method based on temperature influence includes the following steps:
s1: closing the switch (5), sending a control signal to the impact control device (2) through the upper computer (1), enabling the impact generation device (3) to impact the ZnO piezoresistor test piece (7), measuring the working voltage of the ZnO piezoresistor test piece (7) through the voltage detection device (10), opening the switch (5), recording the impact times in the upper computer (1), and repeating the steps for n times;
s2: adjusting the temperature of the constant temperature test box to 20 ℃, controlling an infrared temperature shooting instrument (8) in the constant temperature test box (6) to shoot the ZnO piezoresistor test sample (7) after each impact through an upper computer (1), and obtaining temperature data after the impact in a temperature monitor (9);
s3: transmitting the measured working voltage and temperature signals to a data acquisition unit (11), and transmitting the collected signals to an upper computer (1) by the data acquisition unit (11) through a data processor (12);
s4: calculating to obtain the working current factor I of the ZnO varistor s
Figure GDA0003901217080000041
In the formula (5), n is the impact frequency, T is the temperature of a ZnO piezoresistor test sample, delta is an error coefficient, and x is an integral variable;
s5: the formula (1) is optimized and modeled by adopting a genetic algorithm to obtain the delta which minimizes the error a The method comprises the following specific steps:
1) Randomly generating an initial solution delta, and calculating an objective function f (delta):
Figure GDA0003901217080000042
in the formula (6), f (delta) represents an objective function, I m Is a reference value of the m-th operating current, I sm The calculated value of the m-th working current is N, the total impact times are N =50;
2) Generating a new solution δ 'of the disturbance, calculating an objective function Δ f = f (δ) -f (δ'); if delta f is more than or equal to 0, accepting the new solution, otherwise, obtaining the new solution according to a probability acceptance criterion;
3) Judging whether the iteration times are reached, if so, turning to the step 4), and otherwise, turning to the step 2);
4) Judging whether a termination condition is met, if so, finishing the operation, and outputting an optimal solution, otherwise, resetting the iteration times and turning to the step 2);
s6: delta obtained in S5 a Substituting the formula (1) to obtain the optimized working current factor I of the ZnO varistor a Calculating the formula:
Figure GDA0003901217080000051
in the formula (7), n is the number of impacts, T is the temperature of the ZnO varistor sample, delta a For the optimized error coefficient, x is an integral variable;
s7: calculating an aging state evaluation factor alpha of the ZnO piezoresistor:
Figure GDA0003901217080000052
in the formula (8), U is the working voltage factor at two ends of the ZnO varistor, I a The optimized working current factor is obtained;
when the alpha belongs to [50, + ∞ ]), the ZnO piezoresistor is characterized to be normal; when alpha belongs to [10,50 ], the ZnO piezoresistor is characterized to be slightly aged; when the alpha epsilon is (10,0), the ZnO piezoresistor is seriously aged.

Claims (1)

1. A ZnO varistor aging state assessment method based on temperature influence is characterized in that a test assessment platform is firstly established, and the platform comprises: the device comprises an upper computer (1), an impact control device (2), an impact generating device (3), a high-voltage coaxial cable (4), a switch (5), a constant-temperature test box (6), a ZnO piezoresistor test article (7), an infrared temperature shooting instrument (8), a temperature monitor (9), a voltage detection device (10), a data acquisition unit (11), a data processor (12) and a grounding grid (13);
the upper computer (1) is connected with the input end of the impact control device (2), the output end of the impact control device (2) is connected with the input end of the impact generating device (3), and the base of the impact generating device (3) is connected with the grounding grid (13);
the output end of the impact generating device (3) is connected with the upper end of a high-voltage coaxial cable (4), the lower end of the high-voltage coaxial cable (4) is connected with the left end of a switch (5), the right end of the switch (5) is connected with the upper end of a ZnO piezoresistor test article (7), the lower end of the ZnO piezoresistor test article (7) is connected with the input end of a voltage detecting device (10), and the output end of the voltage detecting device (10) is connected with the base of the impact generating device (3) to form a loop;
the ZnO piezoresistor test sample (7) is placed in the constant-temperature test box (6), and the infrared temperature shooting instrument (8) is placed in the constant-temperature test box (6);
the upper computer (1) is connected with the input end of an infrared temperature shooting instrument (8), the output end of the infrared temperature shooting instrument (8) is connected with the input end of a temperature monitor (9), the output end of the temperature monitor (9) is connected with the input end of a data collector (11), and a voltage detection device (10) is connected with the input end of the data collector (11);
the output end of the data acquisition unit (11) is connected with the input end of the data processor (12), and the output end of the data processor (12) is connected with the upper computer (1);
a ZnO varistor aging state assessment method based on temperature influence comprises the following steps:
s1: closing the switch (5), sending a control signal to the impact control device (2) through the upper computer (1), enabling the impact generation device (3) to send impact to the ZnO piezoresistor test sample (7), measuring the working voltage of the ZnO piezoresistor test sample (7) through the voltage detection device (10), opening the switch (5), recording the impact frequency in the upper computer (1), and repeating the steps for n times;
s2: adjusting the temperature of the constant temperature test box to 20 ℃, controlling an infrared temperature shooting instrument (8) in the constant temperature test box (6) to shoot the ZnO piezoresistor test sample (7) after each impact through an upper computer (1), and obtaining temperature data after the impact in a temperature monitor (9);
s3: the measured working voltage and temperature signals are transmitted to a data acquisition unit (11), and the data acquisition unit (11) transmits the collected signals to an upper computer (1) through a data processor (12);
s4: calculating to obtain the working current factor I of the ZnO piezoresistor s
Figure FDA0003901217070000021
In the formula (1), n is the impact frequency, T is the temperature of a ZnO piezoresistor test sample, delta is an error coefficient, and x is an integral variable;
s5: the formula (1) is optimized and modeled by adopting a genetic algorithm to obtain the delta which minimizes the error a The method comprises the following specific steps:
1) Randomly generating an initial solution delta, and calculating an objective function f (delta):
Figure FDA0003901217070000022
in the formula (2), f (delta) represents an objective function, I m Is a reference value of the m-th operating current, I sm The calculated value of the m-th working current is obtained, and N is the total impact frequency;
2) Generating a new solution δ 'of the disturbance, calculating an objective function Δ f = f (δ) -f (δ'); if delta f is more than or equal to 0, accepting the new solution, otherwise, obtaining the new solution according to a probability acceptance criterion;
3) Judging whether the iteration times are reached, if so, turning to the step 4), and otherwise, turning to the step 2);
4) Judging whether a termination condition is met, if so, finishing the operation and outputting an optimal solution, otherwise, resetting the iteration times and turning to the step 2);
s6: delta obtained in S5 a Substituting the formula (1) to obtain the optimized working current factor I of the ZnO varistor a Calculating the formula:
Figure FDA0003901217070000023
in the formula (3), n is the number of impact times, T is the temperature of the ZnO varistor sample, delta a For the optimized error systemNumber, x is an integral variable;
s7: calculating an aging state evaluation factor alpha of the ZnO piezoresistor:
Figure FDA0003901217070000024
in the formula (4), U is the working voltage factor at two ends of the ZnO varistor, I a The optimized working current factor is obtained;
when the alpha belongs to [50, + ∞ ]), the ZnO piezoresistor is characterized to be normal; when alpha belongs to [10,50 ], the ZnO piezoresistor is characterized to be slightly aged; when alpha epsilon (10,0), the ZnO varistor is characterized to be seriously aged.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006112904A (en) * 2004-10-14 2006-04-27 Kansai Electric Power Co Inc:The Deterioration diagnosis method of lightning arrester
CN101762757A (en) * 2009-10-29 2010-06-30 国网电力科学研究院 Data acquisition device for resistor disc aging test for lightning arrester
CN105738782A (en) * 2016-02-24 2016-07-06 南京信息工程大学 Surge protection device aging failure early warning method based on temperature distribution
CN107219419A (en) * 2017-05-26 2017-09-29 国家电网公司 One kind is super, ultra-high voltage lightning arrester rapid degradation method and system
CN112731041A (en) * 2021-01-11 2021-04-30 西南交通大学 Lightning arrester safety risk assessment method considering pollution accumulation factor of porcelain jacket
CN112904117A (en) * 2021-01-20 2021-06-04 云南电网有限责任公司电力科学研究院 Lightning arrester aging test evaluation system and method considering air temperature and multiple lightning strikes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006112904A (en) * 2004-10-14 2006-04-27 Kansai Electric Power Co Inc:The Deterioration diagnosis method of lightning arrester
CN101762757A (en) * 2009-10-29 2010-06-30 国网电力科学研究院 Data acquisition device for resistor disc aging test for lightning arrester
CN105738782A (en) * 2016-02-24 2016-07-06 南京信息工程大学 Surge protection device aging failure early warning method based on temperature distribution
CN107219419A (en) * 2017-05-26 2017-09-29 国家电网公司 One kind is super, ultra-high voltage lightning arrester rapid degradation method and system
CN112731041A (en) * 2021-01-11 2021-04-30 西南交通大学 Lightning arrester safety risk assessment method considering pollution accumulation factor of porcelain jacket
CN112904117A (en) * 2021-01-20 2021-06-04 云南电网有限责任公司电力科学研究院 Lightning arrester aging test evaluation system and method considering air temperature and multiple lightning strikes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
《Zn0压敏电阻直流老化特性的研究》;黄海博 等;《电磁避雷器》;20210831;第22-29页 *

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