CN114429988B - 一种基于二维半金属电极的金属半导体接触结构 - Google Patents

一种基于二维半金属电极的金属半导体接触结构 Download PDF

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CN114429988B
CN114429988B CN202210107442.0A CN202210107442A CN114429988B CN 114429988 B CN114429988 B CN 114429988B CN 202210107442 A CN202210107442 A CN 202210107442A CN 114429988 B CN114429988 B CN 114429988B
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CN114429988A (zh
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张跃
张先坤
张铮
于慧慧
黄梦婷
汤文辉
高丽
卫孝福
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University of Science and Technology Beijing USTB
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Abstract

本发明公开一种基于二维半金属电极的金属半导体接触结构，所述半导体模块为二维半导体材料，所述金属电极模块为表面无悬挂键的二维半金属材料，所述二维半导体材料与二维半金属材料之间界面为表面粗糙度在0.01‑1nm且表面无悬挂键的范德华界面，所述二维半导体材料与二维半金属材料的层间距小于1nm；本发明的二维半金属材料具有合适的高功函数，以匹配半导体材料的能带边缘，并最终确保接近零的肖特基势垒，其场效应晶体管在室温下显示出创纪录高迁移率，减少肖特基势垒的全二维接触，并展示了其减少肖特基势垒的优化机制，有助于基于二维半导体的肖特基结设计和优化。

Description

一种基于二维半金属电极的金属半导体接触结构
技术领域
本发明涉及金属-半导体技术领域，尤其涉及一种基于二维半金属电极的金属半导体接触结构。
背景技术
随着晶体管特征尺寸的缩小，金属-半导体界面接触电阻的干扰越来越突出，这也阻碍了器件缩放和性能限制的实现，尤其是超薄的二维半导体，金属/二维半导体接触不良的主要原因是大肖特基势垒，这是由于来自无序界面态和金属诱导间隙态的共同导致费米能级钉扎效应，因为相比于金属和体半导体之间的接触，二维半导体的超薄特性使其金属-半导体界面更容易受到晶格缺陷、界面捕获位点和化学相互作用的不利影响；
为了避免在传统金属的热沉积过程中产生这种界面态，现有技术通过转移金属电极的范德华接触来抑制金属/二维半导体界面中的费米能级钉扎，但来自常规金属的衰减金属波函数仍然引入MIGS，导致费米能级的严重钉扎效应，因此，本发明提出一种基于二维半金属电极的金属半导体接触结构以解决现有技术中存在的问题。
发明内容
针对上述问题，本发明的目的在于提出一种基于二维半金属电极的金属半导体接触结构，该基于二维半金属电极的金属半导体接触结构利用二维半金属电极实现了金属和半导体之间的二维无势垒空穴接触，实现了接近零肖特基势垒高度和较高的碲纳米片场效应迁移率，促进基于二维半导体的电子学和光电子学以扩展摩尔定律。
为实现本发明的目的，本发明通过以下技术方案实现：一种基于二维半金属电极的金属半导体接触结构，包括半导体模块和金属电极模块，所述半导体模块为二维半导体材料，所述金属电极模块为表面无悬挂键的二维半金属材料，所述二维半导体材料与二维半金属材料之间界面为表面粗糙度在0.01-1nm且表面无悬挂键的范德华界面，所述二维半导体材料与二维半金属材料的层间距小于1nm，所述二维半导体材料为二维材料，所述二维半金属材料为MX2二维层状半金属材料。
进一步改进在于：所述二维半导体材料为BP、MoTe2、MoS2、WSe2、MoSe2和WS2中的一种。
进一步改进在于：所述二维层状半金属材料MX2中，M表示过渡金属，X表示硫族元素。
进一步改进在于：所述二维层状半金属材料为1T＇-MoTe2、2H-NbS2、1T＇-WTe2、1T＇-TeSe2、1T＇-TiS2、1T-HfTe2、1T-TiTe2、1T＇-WS2、PtTe2和VSe2中的一种。
进一步改进在于：所述二维半导体材料为掺杂过的二维材料，所述掺杂过的二维材料中掺杂元素包含金属掺杂元素Mo、W、Nb、Cu、Al、Au和Fe及硫族掺杂元素O、S、Se、Te、N和P。
进一步改进在于：所述二维半导体材料厚度为0.1-20nm，所述二维半金属材料厚度为1-100nm。
进一步改进在于：所述二维半金属材料的功函数范围为4.0-6.0eV，所述二维半金属材料电极创建的空穴型肖特基势垒高度为0-30meV。
进一步改进在于：所述二维半金属材料电极创建的肖特基势垒包括电子型和空穴型。
进一步改进在于：所述二维半导体材料和二维半金属材料均是通过化学气相沉积法、物理气相沉积法、化学气相传输法、机械剥离法和有机物辅助法中的一种制备得到的。
本发明的有益效果为：本发明的二维半金属材料具有合适的高功函数，以匹配半导体材料的能带边缘，并最终确保接近零的肖特基空穴势垒，其场效应晶体管在室温下显示出创纪录高迁移率，减少肖特基空穴势垒的全二维接触，并展示了其减少肖特基势垒的优化机制，有助于基于二维半导体的肖特基结设计和优化。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明二维半金属电极的半导体晶体管的结构示意图。
图2为本发明传统半金属和二维半金属的功函数统计图。
图3为本发明二维半金属电极的半导体晶体管的电学性能图。
图4为本发明二维半金属电极的半导体晶体管的迁移率和开关比统计图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
根据图1、图2、图3、图4所示，本实施例提供了一种基于二维半金属电极的金属半导体接触结构，包括半导体模块和金属电极模块，所述半导体模块为二维半导体材料，所述金属电极模块为表面无悬挂键的二维半金属材料，二维层状半金属具备带有狄拉克锥的独特电子结构，从而抑制费米能级钉扎效应，所述二维半导体材料与二维半金属材料之间界面为表面粗糙度在0.01-1nm且表面无悬挂键的范德华界面，所述二维半导体材料与二维半金属材料的层间距小于1nm，所述二维半导体材料为二维材料，所述二维半金属材料为MX2二维层状半金属材料。
所述二维半导体材料为BP、MoTe2、MoS2、WSe2、MoSe2和WS2中的一种，所述二维层状半金属材料MX2中，M表示过渡金属，X表示硫族元素，所述二维层状半金属材料为1T＇-MoTe2、2H-NbS2、1T＇-WTe2、1T＇-TeSe2、1T＇-TiS2、1T-HfTe2、1T-TiTe2、1T＇-WS2、PtTe2和VSe2中的一种。
所述二维半导体材料为掺杂过的二维材料，所述掺杂过的二维材料中掺杂元素包含金属掺杂元素Mo、W、Nb、Cu、Al、Au和Fe及非金属掺杂元素O、S、Se、Te、N和P。
所述二维半导体材料厚度为0.1-20nm，所述二维半金属材料厚度为1-100nm。
所述二维半金属材料的功函数范围为4.0-6.0eV，表明使用具有大功函数和无悬挂键范德华表面的二维半金属材料可以实现在二维半导体材料和二维半金属材料界面中零肖特基势垒，所述二维半金属材料电极创建的空穴型肖特基势垒高度为0-30meV，利用二维半金属材料替代传统金属来创建零肖特基空穴势垒，实现高质量的金属半导体接触，所述二维半金属材料电极创建的肖特基势垒包括电子型和空穴型。
所述二维半导体材料和二维半金属材料均是通过化学气相沉积法、物理气相沉积法、化学气相传输法、机械剥离法和有机物辅助法中的一种制备得到的。
实施例二
根据图1、图2、图3、图4所示，本实施例提供了一种基于二维半金属电极的金属半导体接触结构，包括二维半金属材料1T＇-WS2和二维半导体材料碲烯纳米片。二维半金属材料1T＇-WS2，两个相邻层通过弱范德华耦合堆叠，面内的原子通过强共价键连接，晶体具有不对称结构，具有很强的各向异性。其半金属特性也得到了系统的表征。通过精确转移二维半金属材料1T＇-WS2电极，成功构建了二维半导体材料碲烯纳米片场效应晶体管(FET)，具有对称二维半金属材料1T＇-WS2电极的二维半导体材料碲烯纳米片场效应晶体管的结构示意图如说明书附图2所示。二维半金属材料1T＇-WS2电极的二维半导体材料碲烯纳米片场效应晶体管在说明书附图3中显示出优异的线性欧姆接触，表明室温下二维半金属材料1T＇-WS2电极的二维半导体材料碲烯纳米片之间存在小的肖特基势垒，表现出近乎理想的欧姆接触。迁移率也是已报道的二维半导体材料碲烯纳米片场效应晶体管中的最高性能。这种优异的性能并非偶然。通过数十种器件的数据分析，空穴迁移率和ION/IOFF比表明二维半金属材料1T＇-WS2电极的二维半导体材料碲烯纳米片场效应晶体管优异的性能，如说明书附图4所示。
以上对本申请实施例所提供的基于二维半金属电极的高质量金属半导体接触结构，进行了详细介绍。以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。
以上显示和描述了本发明的基本原理、主要特征和优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (1)

1.一种基于二维半金属电极的金属半导体接触结构，其特征在于：包括半导体模块和金属电极模块，所述半导体模块为二维半导体材料，所述金属电极模块为表面无悬挂键的二维半金属材料，所述二维半导体材料与二维半金属材料之间界面为表面粗糙度在0.01-1nm且表面无悬挂键的范德华界面，所述二维半导体材料与二维半金属材料的层间距小于1nm，所述二维半导体材料为二维材料，所述二维半金属材料为MX2二维层状半金属材料，所述二维半导体材料厚度为0.1-20nm，所述二维半金属材料厚度为1-100nm，所述二维半金属材料的功函数范围为4.0-6.0eV，所述二维半金属材料电极创建的空穴型肖特基势垒高度为0-30 meV，其中所述二维半金属材料电极创建的肖特基势垒包括电子型和空穴型，所述二维半导体材料和二维半金属材料均是通过化学气相沉积法、物理气相沉积法、化学气相传输法、机械剥离法和有机物辅助法中的一种制备得到的；
所述二维半导体材料为BP、MoTe2、MoS2、WSe2、MoSe2和WS2中的一种；
所述二维层状半金属材料MX2中，M表示过渡金属，X表示硫族元素；
所述二维层状半金属材料为1T＇-MoTe2、2H-NbS2、1T＇-WTe2、1T＇-TeSe2、1T＇-TiS2、1T-HfTe2、1T-TiTe2、1T＇-WS2、PtTe2和VSe2中的一种；
所述二维半导体材料为掺杂过的二维材料，所述掺杂过的二维材料中掺杂元素包含金属掺杂元素Mo、W、Nb、Cu、Al、Au和Fe及硫族掺杂元素O、S、Se、Te、N和P。
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