CN114427826A - System and method for measuring thickness and quality of crystal during crystal growth of silicon carbide - Google Patents
System and method for measuring thickness and quality of crystal during crystal growth of silicon carbide Download PDFInfo
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- CN114427826A CN114427826A CN202111676687.7A CN202111676687A CN114427826A CN 114427826 A CN114427826 A CN 114427826A CN 202111676687 A CN202111676687 A CN 202111676687A CN 114427826 A CN114427826 A CN 114427826A
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- 239000013078 crystal Substances 0.000 title claims abstract description 159
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 55
- 239000010439 graphite Substances 0.000 claims abstract description 55
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000001514 detection method Methods 0.000 claims abstract description 18
- 238000000691 measurement method Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 4
- 239000007770 graphite material Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- 238000011897 real-time detection Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
Abstract
The invention discloses a system and a method for measuring the thickness and the quality of a crystal during silicon carbide crystal growth, wherein the measuring system comprises a graphite disc, a resistance detection module, a calculation module and a display module, a seed crystal is arranged below the graphite disc, the silicon carbide crystal grows on the seed crystal, two conducting rods are arranged above the graphite disc and are electrically connected with the graphite disc, the resistance detection module is used for detecting the resistance between the two conducting rods in real time, the calculation module is used for calculating the thickness and the quality of the silicon carbide crystal according to the resistance detected by the resistance detection module, and the display module is used for displaying the thickness and the quality of the silicon carbide crystal obtained by the calculation module in real time. The conductive rods are electrically connected with the graphite plate, the resistance between the conductive rods is measured in real time, the resistance is converted into the thickness and the quality of the silicon carbide crystal in the growth process, the thickness and the quality are displayed in real time, an operator can observe whether the growth of the silicon carbide crystal meets the requirements or not in real time, the process is timely adjusted when the growth of the silicon carbide crystal does not meet the requirements, and the crystal is not required to be discharged.
Description
Technical Field
The invention relates to a semiconductor crystal growth auxiliary system, in particular to a system and a method for measuring crystal thickness and quality during silicon carbide crystal growth.
Background
Most of semiconductor single crystal furnaces are high-temperature furnaces, taking silicon carbide as an example, the core temperature of a thermal field is about 2300 ℃, the growth period of crystals is long, the existing silicon carbide single crystal growth furnace (PVT) cannot observe the situation of silicon carbide crystal growth in real time, and the height and the quality of the crystals cannot be observed in real time in the crystal growth process, so that the quality of the obtained silicon carbide crystals is often found to be unexpected after the process period is finished in the production process, the process needs to be adjusted for many times, the process is trial-produced for many times, the process cannot be adjusted in real time according to the quality of the crystals, the period of the crystal growth process usually lasts for several days, and the production efficiency can be seriously influenced by the trial-production for many times.
Disclosure of Invention
The purpose of the invention is as follows: in view of the above disadvantages, the present invention provides a system for measuring the thickness and quality of a crystal during the growth of silicon carbide, which displays data in real time.
The invention also provides a method for measuring the thickness and the quality of the crystal during the crystal growth of the silicon carbide.
The technical scheme is as follows: in order to solve the problems, the invention adopts a system for measuring the thickness and the quality of a crystal during the crystal growth of silicon carbide, which comprises a graphite disc, wherein a seed crystal is arranged below the graphite disc, and the silicon carbide crystal grows on the seed crystal, and the system also comprises a resistance detection module, a calculation module and a display module, wherein two conducting rods are arranged above the graphite disc, are electrically connected with the graphite disc, the graphite disc is electrically connected with the silicon carbide crystal, the resistance detection module is used for detecting the resistance between the two conducting rods in real time, the calculation module is used for calculating the thickness and the quality of the silicon carbide crystal according to the resistance detected by the resistance detection module, and the display module is used for displaying the thickness and the quality of the silicon carbide crystal obtained by the calculation module in real time.
The invention also adopts a method for measuring the thickness and the quality of the crystal during the crystal growth of the silicon carbide, which comprises the following steps:
(1) detecting to obtain the resistance value of the conductive rod and the resistance value of the graphite plate when crystal growth is not carried out initially;
(2) carrying out silicon carbide crystal growth, and measuring the real-time resistance value between the two conducting rods;
(3) calculating the resistance value of the crystal at the moment according to the real-time resistance value, the resistance value of the conducting rod and the resistance value of the graphite plate;
(4) calculating according to the resistivity of the crystal and the calculated crystal resistance value to obtain the thickness of the crystal;
(5) calculating according to the density and thickness of the crystal to obtain the quality of the crystal;
(6) and displaying the calculated crystal thickness and the calculated crystal quality in real time.
Further, the specific steps in the step (1) are as follows:
(1.1) measuring the resistance R between the two conducting rods when the seed crystal is not arranged on the graphite plateTotal 0；
(1.2) measuring the resistance value R between the two conducting rods when seed crystals with the thickness delta are arranged on the graphite plateGeneral 1(ii) a (1.3) measuring the resistance R between the two conducting rods when the graphite plate is provided with the seed crystal with the thickness of 2 deltaGeneral 2(ii) a (1.4) according to RTotal 0、RGeneral 1、RGeneral 2And calculating to obtain the resistance value of the conductive rod and the resistance value of the graphite plate. Further, the resistance value RTotal 0The calculation formula of (2) is as follows:
Rtotal 0＝RGuide tube+RGraphite plate
Wherein R isGuide tubeIs the total resistance value, R, of the conductive rodGraphite plateIs the resistance value of the graphite disc;
the resistance value RGeneral 1The calculation formula of (2) is as follows:
wherein R isSeed crystal 1The resistance value of the seed crystal with the thickness delta;
the resistance value RGeneral 2The calculation formula of (2) is as follows:
wherein R isSeed crystal 2Is a resistance value, R, of a seed crystal having a thickness of 2 deltaSeed crystal 2＝(1/2)RSeed crystal 1。
Further, the crystal resistance R in the step (3)CrystalThe calculation formula of (2):
wherein R isGeneral assemblyIs a real-time resistance value measured between two conductive rods.
Further, the calculation formula of the crystal thickness δ in the step (4) is as follows:
wherein R isCrystalFor the resistance of the crystal, r is the radius of the cross section of the crystal, and ρ is the resistivity of the crystal.
Further, the calculation formula of the crystal mass m in the step (5) is as follows:
m＝ε·δ·πr2
wherein ε is the density of the crystals.
Has the advantages that: compared with the prior art, the silicon carbide crystal growth device has the remarkable advantages that the conductive rods are electrically connected with the graphite plate, the resistance between the conductive rods is measured in real time, the resistance is converted into the thickness and the quality of the silicon carbide crystal in the growth process, the thickness and the quality are displayed in real time, an operator can observe whether the growth of the silicon carbide crystal meets the requirements or not in real time, the process is timely adjusted when the growth of the silicon carbide crystal does not meet the requirements, and the next furnace is adjusted according to the quality of the discharged crystal after the crystal is discharged.
Drawings
FIG. 1 is a schematic structural view of the connection of a seed crystal and a graphite plate at the beginning of the measurement method of the present invention;
FIG. 2 is a schematic structural diagram of the connection between the crystal and the graphite plate during crystal growth by the measurement method of the present invention;
FIG. 3 is a schematic diagram of the structure of the cross section of a crystal when the resistance of the crystal is calculated in the present invention.
Detailed Description
Example 1
As shown in fig. 1 and fig. 2, the system for measuring crystal thickness and quality during silicon carbide crystal growth in this embodiment includes conductive rods 1, a graphite plate 2, a seed crystal 3, a resistance detection module, a calculation module and a display module, where the seed crystal 3 is disposed below the graphite plate 2, a silicon carbide crystal 4 grows on the seed crystal 3, and two conductive rods 1 are disposed above the graphite plate 2, in this embodiment, the conductive rods 1 are made of graphite material, the two conductive rods 1 are electrically connected to the graphite plate 2, the graphite plate 2 is electrically connected to the silicon carbide crystal 4, the two conductive rods 1 are respectively used as an input end and an output end of a circuit, the resistance between the two conductive rods 1 is detected in real time by the resistance detection module, and the calculation module calculates the thickness and quality of the silicon carbide crystal 4 according to the resistance detected by the resistance detection module. Before crystal growth, the calculation module calculates the resistances of the conductive rod 1 and the graphite disc 2 through the resistance detected by the resistance detection module; and during crystal growth, the calculation module obtains the resistance of the crystal according to the real-time total resistance value of the system detected by the resistance detection module and the resistance of the conductive rod and the graphite plate which are obtained by pre-calculation. The display module is used for displaying the thickness and the quality of the silicon carbide crystal obtained by the calculation module in real time, and an operator adjusts the process in real time according to the data displayed by the display module.
Example 2
In the method for measuring the thickness and quality of the crystal during the crystal growth of silicon carbide in this embodiment, the measurement system in the above embodiment is used for measurement, and the measurement system is not described herein again, and the measurement method includes the following steps:
(1) detecting to obtain the resistance value of the conductive rod and the resistance value of the graphite plate when crystal growth is not carried out initially;
(1.1) ElectricityWhen the resistance detection module measures the resistance R between the two conductive rods when no seed crystal is arranged on the graphite diskTotal 0；
(1.2) when the resistance detection module measures seed crystal with the graphite disc set thickness delta, the resistance value R between the two conducting rodsGeneral 1；
(1.3) when the resistance detection module measures seed crystals with the graphite disc thickness of 2 delta, the resistance value R between the two conducting rodsGeneral 2；
(1.4) calculation Module based on RTotal 0、RGeneral 1、RGeneral 2Calculating to obtain the resistance value of the conductive rod and the resistance value of the graphite plate;
resistance value RTotal 0The calculation formula of (2) is as follows:
Rtotal 0＝RGuide tube+RGraphite plate
Wherein R isGuide tubeIs the total resistance value, R, of the conductive rodGraphite plateIs the resistance value of the graphite disc;
resistance value RGeneral 1The calculation formula of (2) is as follows:
wherein R isSeed crystal 1The resistance value of the seed crystal with the thickness delta;
resistance value RGeneral 2The calculation formula of (2) is as follows:
wherein R isSeed crystal 2The resistance value of the seed crystal with the thickness of 2 delta is shown, and the cross sectional area of the seed crystal with the thickness of 2 delta and the cross sectional area of the seed crystal with the thickness of delta are the same as the other conditions except the thickness of the material and the like;
according to a semiconductor resistance calculation formula: r ═ p0(l0/s0) Where ρ is0Is the resistivity of the semiconductor,. alpha.0Is the semiconductor length, s0R can be obtained for the cross-sectional area through which the semiconductor current flowsSeed crystal 2＝(1/2)RSeed crystal 1；
R thus obtained by detectionTotal 0、RGeneral 1、RGeneral 2Calculating to obtain the resistance value R of the conductive rodGuide tubeAnd resistance R of graphite diskGraphite plate。
(2) Carrying out crystal growth on silicon carbide, and measuring real-time resistance R between two conductive rodsGeneral assembly；
(3) According to the real-time resistance value RGeneral assemblyResistance value R of conductive rodGuide tubeAnd resistance R of graphite diskGraphite plateThe resistance R of the crystal at the moment is obtained by calculationCrystal(ii) a Crystal resistance RCrystalThe calculation formula of (2):
(4) calculating according to the resistivity of the crystal and the calculated crystal resistance value to obtain the thickness of the crystal; the formula for calculating the crystal thickness δ is:
wherein R isCrystalFor the resistance of the crystal, r is the radius of the cross section of the crystal, and ρ is the resistivity of the crystal.
(5) Calculating according to the density and thickness of the crystal to obtain the quality of the crystal; the formula for calculating the crystal mass m is:
m＝ε·δ·πr2
wherein ε is the density of the crystals.
(6) And displaying the calculated crystal thickness and the calculated crystal quality in real time.
Claims (8)
1. The utility model provides a measurement system of crystal thickness and quality during carborundum crystal growth, includes the graphite plate, graphite plate below sets up the seed crystal, and carborundum crystal grows on the seed crystal, its characterized in that still includes resistance detection module, calculation module and display module, graphite plate top sets up two conducting rods, and two conducting rods are connected with graphite plate electricity, and graphite plate and carborundum crystal electricity are connected, resistance detection module is used for the resistance between two conducting rods of real-time detection, calculation module is used for calculating carborundum crystal's thickness and quality according to the resistance that resistance detection module detected, display module is used for the thickness and the quality of carborundum crystal that real-time display calculation module obtained.
2. The measuring system of claim 1, wherein the conductive rod is made of graphite material.
3. A measuring method of a measuring system according to claim 1 or 2, characterized by comprising the steps of:
(1) detecting to obtain the resistance value of the conductive rod and the resistance value of the graphite plate when crystal growth is not carried out initially;
(2) carrying out silicon carbide crystal growth, and measuring the real-time resistance value between the two conducting rods;
(3) calculating the resistance value of the crystal at the moment according to the real-time resistance value, the resistance value of the conducting rod and the resistance value of the graphite plate;
(4) calculating according to the resistivity of the crystal and the calculated crystal resistance value to obtain the thickness of the crystal;
(5) calculating according to the density and thickness of the crystal to obtain the quality of the crystal;
(6) and displaying the calculated crystal thickness and the calculated crystal quality in real time.
4. The measurement method according to claim 3, wherein the specific steps in the step (1) are as follows:
(1.1) measuring the resistance R between the two conducting rods when the seed crystal is not arranged on the graphite plateTotal 0；
(1.2) measuring the resistance R between the two conducting rods when the seed crystal with the thickness delta is arranged on the graphite plateGeneral 1；
(1.3) measuring the resistance R between the two conducting rods when the graphite plate is provided with the seed crystal with the thickness of 2 deltaGeneral 2；
(1.4) according to RTotal 0、RGeneral 1、RGeneral 2Calculating the resistance of the conductive rodValues and resistance values of the graphite disks.
5. The measurement method according to claim 4,
the resistance value RTotal 0The calculation formula of (2) is as follows:
Rtotal 0＝RGuide tube+RGraphite plate
Wherein R isGuide tubeIs the total resistance value, R, of the conductive rodGraphite plateIs the resistance value of the graphite disc;
the resistance value RGeneral 1The calculation formula of (2) is as follows:
wherein R isSeed crystal 1The resistance value of the seed crystal with the thickness delta;
the resistance value RGeneral 2The calculation formula of (2) is as follows:
wherein R isSeed crystal 2Is a resistance value, R, of a seed crystal having a thickness of 2 deltaSeed crystal 2＝(1/2)RSeed crystal 1。
6. The measurement method according to claim 3, wherein the crystal resistance R in the step (3)CrystalThe calculation formula of (2):
wherein R isGeneral assemblyIs a real-time resistance value measured between two conductive rods.
7. The measurement method according to claim 3, wherein the calculation formula of the crystal thickness δ in the step (4) is:
wherein R isCrystalFor the resistance of the crystal, r is the radius of the cross section of the crystal, and ρ is the resistivity of the crystal.
8. The method of claim 7, wherein the formula for calculating the crystal mass m in step (5) is:
m＝ε·δ·πr2
wherein ε is the density of the crystals.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09221397A (en) * | 1996-02-14 | 1997-08-26 | Denso Corp | Production of silicon carbide single crystal |
| US20080220232A1 (en) * | 2004-12-27 | 2008-09-11 | Masashi Nakabayashi | Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same |
| CN206033927U (en) * | 2016-08-17 | 2017-03-22 | 重庆工业职业技术学院 | Novel daraf crystal growth is carried in liquid seal device |
| CN110349875A (en) * | 2018-04-03 | 2019-10-18 | 江苏微导纳米装备科技有限公司 | A method of measurement crystal column surface charge density variation |
| CN111364099A (en) * | 2020-04-21 | 2020-07-03 | 宁夏银和新能源科技有限公司 | Method for calculating resistivity of materials in residual pot for continuously drawing single crystal rod |
| CN112748155A (en) * | 2019-10-29 | 2021-05-04 | Skc株式会社 | Method and apparatus for measuring graphite-containing article, and ingot growing system |
| CN112795984A (en) * | 2020-11-23 | 2021-05-14 | 上海新昇半导体科技有限公司 | Method for calculating shape of solid-liquid interface in crystal growth process |
-
2021
- 2021-12-31 CN CN202111676687.7A patent/CN114427826A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09221397A (en) * | 1996-02-14 | 1997-08-26 | Denso Corp | Production of silicon carbide single crystal |
| US20080220232A1 (en) * | 2004-12-27 | 2008-09-11 | Masashi Nakabayashi | Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same |
| CN206033927U (en) * | 2016-08-17 | 2017-03-22 | 重庆工业职业技术学院 | Novel daraf crystal growth is carried in liquid seal device |
| CN110349875A (en) * | 2018-04-03 | 2019-10-18 | 江苏微导纳米装备科技有限公司 | A method of measurement crystal column surface charge density variation |
| CN112748155A (en) * | 2019-10-29 | 2021-05-04 | Skc株式会社 | Method and apparatus for measuring graphite-containing article, and ingot growing system |
| CN111364099A (en) * | 2020-04-21 | 2020-07-03 | 宁夏银和新能源科技有限公司 | Method for calculating resistivity of materials in residual pot for continuously drawing single crystal rod |
| CN112795984A (en) * | 2020-11-23 | 2021-05-14 | 上海新昇半导体科技有限公司 | Method for calculating shape of solid-liquid interface in crystal growth process |
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