CN114421280A - Semiconductor laser and method for manufacturing the same - Google Patents
Semiconductor laser and method for manufacturing the same Download PDFInfo
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- CN114421280A CN114421280A CN202210315573.8A CN202210315573A CN114421280A CN 114421280 A CN114421280 A CN 114421280A CN 202210315573 A CN202210315573 A CN 202210315573A CN 114421280 A CN114421280 A CN 114421280A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Abstract
The invention relates to a semiconductor laser, which comprises a substrate, wherein a buffer layer, an active layer and an InP layer are sequentially epitaxially grown on the substrate, and the semiconductor laser also comprises a grating layer, wherein the grating layer is manufactured by etching the InP layer towards the active layer to form a grating, and burying the grating on the etched InP layer to obtain the grating layer; introducing inert gas before grating burying; the high refractive index material in the grating layer is the same as the material used for grating burying, and the inert gas is used as the low refractive index material in the grating layer. A method of manufacture is also provided. In the design of the grating layer, the inert gas is used as the material with low refractive index, so that the difference of the refractive index of the grating layer material is 10 times or more than that of the grating layer material in the traditional design, the grating coupling coefficient is greatly improved, and the coupling efficiency and the power efficiency of the laser are further improved. The grating layer is designed from the same material, and compared with the traditional InGaAsP/InP material, the grating layer is easy to epitaxially grow by the same material design, and the epitaxial growth quality of the grating layer at the interface is improved.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a semiconductor laser and a manufacturing method thereof.
Background
The semiconductor laser has the advantages of small volume, light weight, low cost and easy scale production, and has wide development prospect in the fields of optical storage, optical communication, national defense and the like. As semiconductor lasers are used more and more widely, the performance requirements of the semiconductor lasers are higher and higher, and the performance requirements of the semiconductor lasers are becoming important factors for limiting the performance of the semiconductor lasers.
In a conventional semiconductor laser, a grating layer is composed of two materials, and a coupling coefficient K = a0 Γ Δ n affecting the grating coupling efficiency, where the refractive index of a high refractive index material of the grating layer is n1, the refractive index of a low refractive index material is n2, an effective refractive index difference Δ n = | -n 1-n 2 |, a0 is a constant coefficient, and Γ is a light field limiting factor. In a specific laser design, the coupling coefficient is strongly related to the effective refractive index difference, and as the effective refractive index difference becomes larger, the coupling coefficient becomes larger, the feedback and coupling of the grating layer to light become larger, the output loss of the laser becomes smaller, the threshold current becomes smaller, and further the power efficiency of the laser becomes larger.
The refractive index of InGaAsP formed by InGaAsP and InP in a common semiconductor laser grating layer is about 3.4, the refractive index of InP is 3.2, and the effective refractive index difference is delta n = about 0.2. In certain laser structures, the optical field confinement factor is typically increased in order to increase the coupling coefficient of the semiconductor laser. This method requires a lot of epitaxial experiments, such as changing the epitaxial structure, doping concentration, etc. In the prior art, a plurality of InGaN stress regulation waveguide layers with gradually increased In components are introduced, and the optical field limiting factor of a GaN laser is increased to improve the performance of the laser. And the doping concentration of the limiting layers of the upper and lower waveguide layers is changed to increase the optical field limiting factor and reduce the threshold current and energy consumption of the laser. However, the method for increasing the coupling coefficient of the laser and reducing the loss of the laser by increasing the light field limiting factor has a complex structure, and is not beneficial to industrial mass production.
Disclosure of Invention
The invention aims to provide a semiconductor laser and a manufacturing method thereof, which can at least solve part of defects in the prior art.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions: a semiconductor laser comprises a substrate, a grating layer and a buffer layer, an active layer and an InP layer, wherein the buffer layer, the active layer and the InP layer are sequentially grown on the substrate in an epitaxial manner; introducing inert gas before grating burying; the high refractive index material in the grating layer is the same as the material for grating burying, and the inert gas is used as the low refractive index material in the grating layer.
Further, the high-refractive-index material in the grating layer and the material for grating burying are both one or more of InP material and InGaAsP material.
Further, the shape of the gaseous medium formed by the inert gas is trapezoidal or triangular.
Further, when the material of the grating layer is a non-oxidizing material, in addition to using an inert gas as the low refractive index material in the grating layer, the inert gas may be replaced by air.
Further, the inert gas includes helium, hydrogen, or nitrogen.
Further, the semiconductor laser is a distributed feedback laser, a distributed Bragg reflection laser or SiO2Or SiNxA laser of silicon-based semiconductor material being a grating layer.
Furthermore, the depth-to-width ratio of the grating layer is 2-10000, the duty ratio is 10% -90%, the thickness of the grating layer is 5-100 nm, and the thickness of a material for grating burying is 10-3000 nm.
The embodiment of the invention provides another technical scheme: a method for manufacturing a semiconductor laser comprises the following steps:
s1, epitaxially growing a buffer layer, an active layer and an InP layer on the substrate in sequence;
s2, etching the InP layer to the direction of the active layer to form a grating;
s3, introducing inert gas;
s4, carrying out grating burying on the etched InP layer to obtain a grating layer;
s5, growing a cladding layer and a contact layer;
and S6, finally, carrying out subsequent ridge waveguide, electrode, thinning and alloying to finish the manufacture of the laser.
Further, holographic or electron beam lithography is utilized to manufacture the grating, and the duty ratio is controlled to be 10% -90%; the depth h of the grating layer is etched by a dry method, the width is w, and the depth-to-width ratio (h/w) is controlled to be 2-10000; and then modifying the interface of the grating layer by a wet method.
Further, the buffer layer, the active layer and the InP layer are epitaxially grown at one time by MOCVD; and performing secondary epitaxy by using MOCVD (metal organic chemical vapor deposition), introducing inert gas, and optimizing an epitaxial growth program to perform grating burying.
Compared with the prior art, the invention has the beneficial effects that: inert gas is used as a low-refractive-index material in the design of the grating layer, so that the difference of the refractive index of the grating layer material is 10 times or more of that of the traditional design, the grating coupling coefficient is greatly improved, and the coupling efficiency and the power efficiency of the laser are further improved. And secondly, the grating layer is designed by the same material, compared with the traditional InGaAsP/InP material, the grating layer is easy to epitaxially grow by the same material design, and the epitaxial growth quality of the grating layer at the interface is improved.
Drawings
FIG. 1 is a diagram illustrating a conventional grating layer burying;
FIG. 2 is a diagram illustrating a conventional grating layer structure;
fig. 3 is a schematic view of a one-time epitaxial structure of a semiconductor laser grating layer design according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a dry etching depth of a grating layer of a semiconductor laser according to an embodiment of the present invention;
fig. 5 is a schematic diagram of burying a grating layer of a semiconductor laser using an inert gas as a low refractive index material according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a grating layer of a semiconductor laser using an inert gas as a low refractive index material according to an embodiment of the present invention;
in the reference symbols: 1-a substrate; 2-a buffer layer; 3-an active layer; a 4-InP layer; 6-a grating layer; 7-a cladding; 8-a contact layer; 9-gaseous medium.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 3 to 6, an embodiment of the present invention provides a semiconductor laser, including a substrate 1, where the substrate 1 is sequentially epitaxially grown with a buffer layer 2, an active layer 3, and an InP layer 4, and further includes a grating layer, where the grating layer 6 is specifically manufactured by etching the InP layer 4 toward the active layer 3 to form a grating, and burying the grating on the etched InP layer 4 to obtain the grating layer 6; introducing inert gas before grating burying; the high refractive index material in the grating layer 6 is the same as the material for grating burying, and the inert gas is used as the low refractive index material in the grating layer 6. In this embodiment, when designing the grating layer, the inert gas is used as the low refractive index material, so that the difference of the refractive index of the material of the grating layer 6 is 10 times or more of that of the conventional design, the grating coupling coefficient is greatly improved, and the coupling efficiency and the power efficiency of the laser are further improved. And secondly, the grating layer is designed by the same material, compared with the traditional InGaAsP/InP material, the grating layer is easy to epitaxially grow by the same material design, and the epitaxial growth quality of the grating layer at the interface is improved. Grating layer burying and grating layer structures of a conventional laser are shown in fig. 1 and fig. 2, wherein the grating layer 6 is InGaAsP/InP, the high refractive index material is n1(InGaAsP) =3.4, and the low refractive index material is n2(InP) = 3.2. Here, the grating layer 6 has a high refractive index material and a low refractive index material, regardless of the conventional laser or the laser of the present embodiment. Then the effective refractive index difference Δ n =0.2 is calculated according to the formula mentioned in the background. In this embodiment, when the grating layer 6 is manufactured, a plurality of periodic grooves are formed by etching, and then grating burying materials are filled into the grooves. If the high refractive index material in the grating layer 6 and the material for grating burying are the same, and then the inert gas is used as the low refractive index material in the grating layer 6, the effective refractive index difference can reach more than 2 no matter whether the high refractive index material in the grating layer 6 and the material for grating burying are both InP material, InGaAsP material or the material combining the two, so that the effective refractive index difference can be more than 10 times of that of the traditional design, the grating coupling system is greatly improved, the output loss is reduced, and the power efficiency of the laser is improved. Because the refractive index of the former is either 3.2 or 3.4, or the refractive index of the InP material and the InGaAsP material in combination can be 3 or more, and the inert gas of the latter includes helium, hydrogen, or nitrogen, or when the material of the grating layer 6 is a non-oxidizing material, air can be used as the low refractive index material, and the refractive index of helium, hydrogen, nitrogen, or air is all about 1, so the difference between the former and the latter is greater than 2. In a preferred embodiment, the high refractive index material in the grating layer 6 and the material for grating burying are both InP material (as shown in the embodiment of fig. 6, n2 is used for the grating layer 6), the refractive index n3 of the gas medium 9 formed by inert gas is 1 (as shown in the second trapezoid on the left of fig. 6, n3 is marked to illustrate that the refractive index of the gas medium 9 represented by all trapezoids is n 3), and the obtained effective refractive index difference is 2.2. It is stated here that when the material of the grating layer 6 is an oxidizing material, an inert gas is used, and when the material of the grating layer 6 is a non-oxidizing material, air may be used as the low refractive index material, but of course, an inert gas may be used, or both. Since the material of the grating layer 6 is usually an oxidizing material, an inert gas is used. Preferably, when the high refractive index material in the grating layer 6 and the grating burying are both InP materials, epitaxial growth is easy, which is helpful to improve the epitaxial growth quality of the grating layer at the interface. Preferably, the shape of the gaseous medium 9 formed by the inert gas is preferably trapezoidal or triangular. Preferably, the buffer layer 2 and the cladding layer 7 are both made of InP material.
As an optimization scheme of the embodiment of the invention, pleaseReferring to fig. 3 to 6, the semiconductor laser is a distributed feedback laser, a distributed bragg reflector laser or a SiO laser2Or SiNxA laser of silicon-based semiconductor material being the grating layer 6. In this embodiment, a low refractive index inert gas or air is suitable for all the above lasers.
As an optimized scheme of the embodiment of the present invention, please refer to fig. 3 to 6, an aspect ratio of the grating layer 6 is between 2 to 10000, a duty ratio is between 10% to 90%, a thickness of the grating layer 6 is between 5 to 100nm, and a thickness of a material for grating burying is between 10 to 3000 nm.
Referring to fig. 3 to fig. 6, an embodiment of the invention provides a method for manufacturing a semiconductor laser, including the following steps: s1, epitaxially growing a buffer layer 2, an active layer 3, and an InP layer 4 on a substrate 1 in this order; s2, fabricating a grating layer 6 on the InP layer 4; s3, introducing inert gas, and optimizing an epitaxial growth program to bury the grating; s4, followed by the growth of the cladding layer 7 and the contact layer 8; and S5, finally, carrying out subsequent ridge waveguide, electrode, thinning and alloying to finish the manufacture of the laser. In this embodiment, when designing the grating layer, the inert gas is used as the low refractive index material, so that the difference of the refractive index of the material of the grating layer 6 is 10 times or more of that of the conventional design, the grating coupling coefficient is greatly improved, and the coupling efficiency and the power efficiency of the laser are further improved. And secondly, the grating layer is designed by the same material, compared with the traditional InGaAsP/InP material, the grating layer is easy to epitaxially grow by the same material design, and the epitaxial growth quality of the grating layer at the interface is improved. Grating layer burying and grating layer structures of a conventional laser are shown in fig. 1 and fig. 2, wherein the grating layer 6 is InGaAsP/InP, the high refractive index material is n1(InGaAsP) =3.4, and the low refractive index material is n2(InP) = 3.2. Here, the grating layer 6 has a high refractive index material and a low refractive index material, regardless of the conventional laser or the laser of the present embodiment. Then the effective refractive index difference Δ n =0.2 is calculated according to the formula mentioned in the background. In this embodiment, when the grating layer 6 is manufactured, a plurality of periodic grooves are formed by etching, and then grating burying materials are filled into the grooves. If the high refractive index material in the grating layer 6 and the material for grating burying are the same, and then the inert gas is used as the low refractive index material in the grating layer 6, the effective refractive index difference can reach more than 2 no matter whether the high refractive index material in the grating layer 6 and the material for grating burying are both InP material, InGaAsP material or the material combining the two, so that the effective refractive index difference can be more than 10 times of that of the traditional design, the grating coupling system is greatly improved, the output loss is reduced, and the power efficiency of the laser is improved. Because the refractive index of the former is either 3.2 or 3.4, or the refractive index of the InP material and the InGaAsP material in combination can be 3 or more, and the inert gas of the latter includes helium, hydrogen, or nitrogen, or when the material of the grating layer 6 is a non-oxidizing material, air can be used as the low refractive index material, and the refractive index of helium, hydrogen, nitrogen, or air is all about 1, so the difference between the former and the latter is greater than 2. In a preferred embodiment, the high refractive index material in the grating layer 6 and the material used for grating burying are both InP, and the refractive index of the inert gas is 1, so the resulting effective index difference is 2.2. It is stated here that when the material of the grating layer 6 is an oxidizing material, an inert gas is used, and when the material of the grating layer 6 is a non-oxidizing material, air may be used as the low refractive index material, but of course, an inert gas may be used, or both. Since the material of the grating layer 6 is usually an oxidizing material, an inert gas is used. Preferably, when the high refractive index material in the grating layer 6 and the grating burying are both InP materials, epitaxial growth is easy, which is helpful to improve the epitaxial growth quality of the grating layer at the interface. Preferably, the shape of the gaseous medium 9 formed by the inert gas is preferably trapezoidal or triangular. Preferably, the buffer layer 2 and the cladding layer 7 are both made of InP material.
As an optimization scheme of the embodiment of the invention, as shown in fig. 4, a holographic or electron beam lithography is used to manufacture a grating, and the duty ratio is controlled to be 10% -90%; dry etching the groove with depth h and width w, and controlling the depth-to-width ratio (h/w) between 2 and 10000; and then modifying the interface of the grating layer by a wet method.
As an optimized solution of the embodiment of the present invention, as shown in fig. 5 and 6, the buffer layer 2, the active layer 3, and the InP layer 4 are epitaxially grown at one time by MOCVD; and then carrying out secondary epitaxy by using MOCVD (metal organic chemical vapor deposition), introducing inert gas, and optimizing an epitaxial growth program to bury the grating.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A semiconductor laser comprises a substrate, wherein a buffer layer, an active layer and an InP layer are sequentially epitaxially grown on the substrate, and the semiconductor laser is characterized in that: the manufacturing method of the grating layer comprises the steps that the InP layer is etched in the direction of the active layer to form a grating, and the etched InP layer is subjected to grating burying to obtain the grating layer; introducing inert gas before grating burying; the high refractive index material in the grating layer is the same as the material for grating burying, and the inert gas is used as the low refractive index material in the grating layer.
2. A semiconductor laser as claimed in claim 1 wherein: the high-refractive-index material and the material for grating burying in the grating layer are both one or more of InP material and InGaAsP material.
3. A semiconductor laser as claimed in claim 1 wherein: the shape of the gaseous medium formed by the inert gas is trapezoid or triangle.
4. A semiconductor laser as claimed in claim 1 wherein: when the material of the grating layer is a non-oxidizing material, in addition to using an inert gas as the low refractive index material in the grating layer, the inert gas may be replaced by air.
5. A semiconductor laser as claimed in claim 1 wherein: the inert gas includes helium, hydrogen, or nitrogen.
6. A semiconductor laser as claimed in claim 1 wherein: the semiconductor laser is distributed feedback laser, distributed Bragg reflection laser or SiO2Or SiNxA laser of silicon-based semiconductor material being a grating layer.
7. A semiconductor laser as claimed in claim 1 wherein: the depth-to-width ratio of the grating layer is 2-10000, the duty ratio is 10% -90%, the thickness of the grating layer is 5-100 nm, and the thickness of a material for grating burying is 10-3000 nm.
8. A method for manufacturing a semiconductor laser is characterized by comprising the following steps:
s1, epitaxially growing a buffer layer, an active layer and an InP layer on the substrate in sequence;
s2, etching the InP layer to the direction of the active layer to form a grating;
s3, introducing inert gas;
s4, carrying out grating burying on the etched InP layer to obtain a grating layer;
s5, growing a cladding layer and a contact layer;
and S6, finally, carrying out subsequent ridge waveguide, electrode, thinning and alloying to finish the manufacture of the laser.
9. A method of fabricating a semiconductor laser as claimed in claim 8 wherein: utilizing holographic or electron beam lithography to manufacture a grating, and controlling the duty ratio to be 10% -90%; the depth of the groove etched by the dry method is h, the width of the groove etched by the dry method is w, and the depth-to-width ratio (h/w) is controlled to be 2-10000; and then modifying the interface of the grating layer by a wet method.
10. A method of fabricating a semiconductor laser as claimed in claim 8 wherein: epitaxially growing the buffer layer, the active layer and the InP layer by MOCVD at one time; and performing secondary epitaxy by using MOCVD (metal organic chemical vapor deposition), introducing inert gas, and optimizing an epitaxial growth program to perform grating burying.
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Address after: 430223 Room 102, No. 1 plant of Wuhan AoXin technology, No. 2, changchanghuayuan Road, Donghu New Technology Development Zone, Wuhan, Hubei Province Patentee after: Wuhan Yunling Optoelectronics Co.,Ltd. Address before: 430223 Room 102, No. 1 plant of Wuhan AoXin technology, No. 2, changchanghuayuan Road, Donghu New Technology Development Zone, Wuhan, Hubei Province Patentee before: WUHAN YUNLING PHOTOELECTRIC Co.,Ltd. |